CA937682A - Temperature compensated semiconductor resistor containing neutral inactive impurities - Google Patents

Temperature compensated semiconductor resistor containing neutral inactive impurities

Info

Publication number
CA937682A
CA937682A CA067595A CA67595A CA937682A CA 937682 A CA937682 A CA 937682A CA 067595 A CA067595 A CA 067595A CA 67595 A CA67595 A CA 67595A CA 937682 A CA937682 A CA 937682A
Authority
CA
Canada
Prior art keywords
temperature compensated
semiconductor resistor
containing neutral
resistor containing
compensated semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA067595A
Inventor
M. Shannon John
Bulthuis Kornelis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA937682A publication Critical patent/CA937682A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605Resistors with PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Drying Of Semiconductors (AREA)
CA067595A 1968-11-19 1969-11-17 Temperature compensated semiconductor resistor containing neutral inactive impurities Expired CA937682A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5487868A GB1249317A (en) 1968-11-19 1968-11-19 Semiconductor devices

Publications (1)

Publication Number Publication Date
CA937682A true CA937682A (en) 1973-11-27

Family

ID=10472333

Family Applications (1)

Application Number Title Priority Date Filing Date
CA067595A Expired CA937682A (en) 1968-11-19 1969-11-17 Temperature compensated semiconductor resistor containing neutral inactive impurities

Country Status (12)

Country Link
JP (1) JPS4844064B1 (en)
AT (1) AT300961B (en)
BE (1) BE741870A (en)
BR (1) BR6914260D0 (en)
CA (1) CA937682A (en)
CH (1) CH500570A (en)
DE (1) DE1954445A1 (en)
ES (1) ES373627A1 (en)
FR (1) FR2023619A1 (en)
GB (1) GB1249317A (en)
NL (1) NL166820C (en)
SE (1) SE361771B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3796929A (en) * 1970-12-09 1974-03-12 Philips Nv Junction isolated integrated circuit resistor with crystal damage near isolation junction
FR2123179B1 (en) * 1971-01-28 1974-02-15 Commissariat Energie Atomique
FR2189876A1 (en) * 1972-06-23 1974-01-25 Anvar Radiation resistant silicon wafers - and solar cells made therefrom for use in space
JPS53148374U (en) * 1977-04-27 1978-11-22
JPS53136980A (en) * 1977-05-04 1978-11-29 Nippon Telegr & Teleph Corp <Ntt> Resistance value correction method for poly crystal silicon resistor
DE2828607C3 (en) * 1977-06-29 1982-08-12 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Semiconductor device
GB2000639B (en) * 1977-06-29 1982-03-31 Tokyo Shibaura Electric Co Semiconductor device
JPS5439584A (en) * 1977-07-14 1979-03-27 Toshiba Corp Semiconductor device
DE3301665A1 (en) * 1983-01-20 1984-07-26 Brown, Boveri & Cie Ag, 6800 Mannheim METHOD FOR PRODUCING A THIN FILM RESISTOR
JPS6014898A (en) * 1983-07-05 1985-01-25 高田 継生 Clothing closet equipped with dryer

Also Published As

Publication number Publication date
ES373627A1 (en) 1972-05-16
BR6914260D0 (en) 1973-04-19
NL6917221A (en) 1970-05-21
NL166820C (en) 1981-09-15
DE1954445A1 (en) 1970-06-11
JPS4844064B1 (en) 1973-12-22
FR2023619A1 (en) 1970-08-21
BE741870A (en) 1970-05-19
NL166820B (en) 1981-04-15
AT300961B (en) 1972-08-10
SE361771B (en) 1973-11-12
GB1249317A (en) 1971-10-13
CH500570A (en) 1970-12-15

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