ES328500A1 - Procedimiento de metalizacion de semiconductores. - Google Patents

Procedimiento de metalizacion de semiconductores.

Info

Publication number
ES328500A1
ES328500A1 ES0328500A ES328500A ES328500A1 ES 328500 A1 ES328500 A1 ES 328500A1 ES 0328500 A ES0328500 A ES 0328500A ES 328500 A ES328500 A ES 328500A ES 328500 A1 ES328500 A1 ES 328500A1
Authority
ES
Spain
Prior art keywords
aluminum
silicon
predetermined area
nickel
evaporate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0328500A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia Spain SA
Original Assignee
Alcatel Espana SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Espana SA filed Critical Alcatel Espana SA
Publication of ES328500A1 publication Critical patent/ES328500A1/es
Expired legal-status Critical Current

Links

Classifications

    • H10W74/43—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/28—Solid state diffusion of only metal elements or silicon into metallic material surfaces using solids, e.g. powders, pastes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H10P95/00—
    • H10W20/40—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
ES0328500A 1965-06-28 1966-06-28 Procedimiento de metalizacion de semiconductores. Expired ES328500A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46777565A 1965-06-28 1965-06-28

Publications (1)

Publication Number Publication Date
ES328500A1 true ES328500A1 (es) 1967-04-01

Family

ID=23857128

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0328500A Expired ES328500A1 (es) 1965-06-28 1966-06-28 Procedimiento de metalizacion de semiconductores.

Country Status (5)

Country Link
BE (1) BE690439A (index.php)
DE (1) DE1286220C2 (index.php)
ES (1) ES328500A1 (index.php)
GB (1) GB1120693A (index.php)
NL (1) NL6608937A (index.php)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB876077A (en) * 1959-05-27 1961-08-30 Bendix Corp Semiconductor device
AT235969B (de) * 1962-05-29 1964-09-25 Siemens Ag Verfahren zum Erzeugen einer hochdotierten p-leitenden Zone in einem Halbleiterkörper, insbesondere aus Silizium
DE1189657B (de) * 1962-07-17 1965-03-25 Telefunken Patent Verfahren zur Herstellung von Halbleiteranordnungen mit legierten Elektroden

Also Published As

Publication number Publication date
BE690439A (index.php) 1967-05-30
DE1286220B (de) 1974-04-04
NL6608937A (index.php) 1966-12-29
DE1286220C2 (de) 1974-04-04
GB1120693A (en) 1968-07-24

Similar Documents

Publication Publication Date Title
ES326632A1 (es) Un dispositivo semiconductor.
ES321208A1 (es) Un metodo de producir un dispositivo semiconductor.
NL154870B (nl) Metalen montageband te gebruiken bij de fabricage van halfgeleiderinrichtingen, werkwijze voor het met behulp van deze montageband fabriceren van halfgeleiderinrichtingen en met deze werkwijze verkregen halfgeleiderinrichting.
ES309288A3 (es) Un dispositivo electrico de estado solido.
JPS5279679A (en) Semiconductor memory device
DK113305B (da) Stabel af halvlederventiler med to på modsatte sider af ventilen anbragte kølelegemer.
ES310007A1 (es) Un dispositivo de efecto de campo de estado solido.
GB1225088A (index.php)
NL161304B (nl) Halfgeleiderinrichting met een laagvormig gebied en een door een isolerendelaag van het laagvormig gebied gescheiden elektrodelaag, zodat bij het aanleggen van een geschikte potentiaal op de elektrodelaag in het laagvormig gebied een uitputtingszone wordt gevormd.
GB710245A (en) Contact device
ES328500A1 (es) Procedimiento de metalizacion de semiconductores.
ES360290A1 (es) Perfeccionamientos en la construccion de dispositivos semi-conductores.
JPS553815B1 (index.php)
JPS51150284A (en) Semiconductor unvolatile memory unit
ES301778A1 (es) Un dispositivo semiconductor.
ES346421A1 (es) Metodo para formar un contacto metalico para un dispositivosemiconductor.
ES374600A1 (es) Perfeccionamientos en la construccion de dispositivos de semiconductor de oxido metalico.
ES381695A1 (es) Perfeccionamientos en la construccion de estructuras para semiconductores.
ES388206A1 (es) Un dispositivo destinado a ser anclado a un disipador de calor.
JPS5219978A (en) Manufacture process for a semiconductor device
ES371158A1 (es) Una disposicion de circuito monolitico.
ES313579A1 (es) Perfeccionamientos en la fabricacion de dispositivos semi- conductores.
ES383728A1 (es) Un dispositivo semiconductor.
ES181668U (es) Una disposicion de estructura semiconductora.
ES366751A1 (es) Un dispositivo semiconductor.