ES2637391T3 - Procedimiento de pulverización catódica de barrido lineal - Google Patents

Procedimiento de pulverización catódica de barrido lineal Download PDF

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Publication number
ES2637391T3
ES2637391T3 ES12866275.6T ES12866275T ES2637391T3 ES 2637391 T3 ES2637391 T3 ES 2637391T3 ES 12866275 T ES12866275 T ES 12866275T ES 2637391 T3 ES2637391 T3 ES 2637391T3
Authority
ES
Spain
Prior art keywords
target
substrates
conveyor
magnets
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES12866275.6T
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English (en)
Inventor
David Ward Brown
Vinay Shah
Terry Pederson
Terry Bluck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intevac Inc
Original Assignee
Intevac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intevac Inc filed Critical Intevac Inc
Application granted granted Critical
Publication of ES2637391T3 publication Critical patent/ES2637391T3/es
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/32779—Continuous moving of batches of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Procedimiento para procesar un sustrato mediante pulverización catódica, que comprende: colocar una pluralidad de sustratos sobre un transportador; manejar el transportador de forma que transporte la pluralidad de sustratos a una velocidad constante y en una orientación hacia una diana, de forma que a cualquier tiempo dado, varios sustratos están orientados hacia la diana entre el borde de ataque y el borde de salida; barrer de forma recíproca una disposición de imanes detrás de la diana al tiempo que sostiene el plasma en un espacio entre la diana y los sustratos, en el que la etapa de barrer de forma recíproca la disposición de imanes se realiza a una velocidad que es, como mínimo, varias veces más rápida que la velocidad constante del transportador, caracterizado por definir zonas de rotación detrás del borde de ataque y el borde de salida de la diana e invertir el barrido recíproco de la disposición de imanes a puntos diferentes dentro de las zonas de rotación durante barridos diferentes.

Description

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Claims (1)

  1. imagen1
ES12866275.6T 2011-11-04 2012-11-02 Procedimiento de pulverización catódica de barrido lineal Active ES2637391T3 (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161556154P 2011-11-04 2011-11-04
US201161556154P 2011-11-04
PCT/US2012/063432 WO2013109333A2 (en) 2011-11-04 2012-11-02 Linear scanning sputtering system and method

Publications (1)

Publication Number Publication Date
ES2637391T3 true ES2637391T3 (es) 2017-10-13

Family

ID=48222970

Family Applications (1)

Application Number Title Priority Date Filing Date
ES12866275.6T Active ES2637391T3 (es) 2011-11-04 2012-11-02 Procedimiento de pulverización catódica de barrido lineal

Country Status (10)

Country Link
US (2) US20130112546A1 (es)
EP (1) EP2773792B1 (es)
JP (1) JP2014532813A (es)
KR (1) KR102054533B1 (es)
CN (2) CN104114741B (es)
ES (1) ES2637391T3 (es)
MY (1) MY185148A (es)
SG (2) SG11201401977UA (es)
TW (1) TWI473900B (es)
WO (1) WO2013109333A2 (es)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10106883B2 (en) 2011-11-04 2018-10-23 Intevac, Inc. Sputtering system and method using direction-dependent scan speed or power
US20160133445A9 (en) * 2011-11-04 2016-05-12 Intevac, Inc. Sputtering system and method for highly magnetic materials
US20140332376A1 (en) * 2011-11-04 2014-11-13 Intevac, Inc. Sputtering system and method using counterweight
EP2854155B1 (en) * 2013-09-27 2017-11-08 INDEOtec SA Plasma reactor vessel and assembly, and a method of performing plasma processing
RS58180B1 (sr) * 2014-01-14 2019-03-29 The Batteries Spolka Z Ograniczona Odpowiedzialnoscia Postupak za nanošenje slojeva od tankog filma i proizvodna linija za implementaciju postupka
KR102327285B1 (ko) * 2014-02-20 2021-11-16 인테벡, 인코포레이티드 카운터웨이트를 이용하는 스퍼터링 시스템 및 방법
WO2015130532A1 (en) * 2014-02-20 2015-09-03 Intevac, Inc. Sputtering system and method using direction-dependent scan speed or power
CN105803410B (zh) * 2016-04-29 2018-07-17 京东方科技集团股份有限公司 磁控溅射装置、磁控溅射设备及磁控溅射的方法
JP6579726B2 (ja) 2017-06-28 2019-09-25 株式会社アルバック スパッタ装置
JP7066841B2 (ja) * 2018-06-19 2022-05-13 株式会社アルバック スパッタリング方法、スパッタリング装置
GB2588939B (en) * 2019-11-15 2022-12-28 Dyson Technology Ltd Sputter deposition apparatus and method
CN111074240A (zh) * 2020-02-11 2020-04-28 沧州天瑞星光热技术有限公司 一种提高真空镀膜气氛均匀性的气路布置方法
CN113337798B (zh) * 2021-04-13 2022-12-27 电子科技大学 薄膜制备方法、高通量组合材料芯片制备方法及其系统

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JPS6199936A (ja) * 1984-10-19 1986-05-19 Matsushita Electric Ind Co Ltd 磁気記録媒体の製造方法
DE4107505A1 (de) * 1991-03-08 1992-09-10 Leybold Ag Verfahren zum betrieb einer sputteranlage und vorrichtung zur durchfuehrung des verfahrens
JP3076463B2 (ja) * 1992-11-11 2000-08-14 キヤノン株式会社 薄膜形成装置
JP3514488B2 (ja) * 1993-06-30 2004-03-31 株式会社アルバック マグネトロンスパッタ方法及び装置
JP3390579B2 (ja) * 1995-07-03 2003-03-24 アネルバ株式会社 液晶ディスプレイ用薄膜の作成方法及び作成装置
JPH0959772A (ja) 1995-08-21 1997-03-04 Nippon Sheet Glass Co Ltd マグネトロンスパッタ法
JPH09111453A (ja) * 1995-10-13 1997-04-28 Shin Etsu Chem Co Ltd 真空基板搬送装置及び真空基板搬送方法
US5907220A (en) * 1996-03-13 1999-05-25 Applied Materials, Inc. Magnetron for low pressure full face erosion
KR100262768B1 (ko) * 1996-04-24 2000-08-01 니시히라 순지 스퍼터성막장치
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US5873989A (en) * 1997-02-06 1999-02-23 Intevac, Inc. Methods and apparatus for linear scan magnetron sputtering
JPH1143766A (ja) * 1997-07-23 1999-02-16 Matsushita Electric Ind Co Ltd 薄膜形成方法及び装置
JP2000192239A (ja) * 1998-12-22 2000-07-11 Matsushita Electric Ind Co Ltd スパッタリング方法およびスパッタリング装置
JP4453850B2 (ja) * 1999-06-01 2010-04-21 キヤノンアネルバ株式会社 スパッタ成膜装置およびスパッタ膜形成方法
JP2004131846A (ja) * 2002-09-19 2004-04-30 Ulvac Japan Ltd 低反射膜の製造方法及び装置
US7101466B2 (en) * 2003-09-19 2006-09-05 Kdf Electronic + Vacuum Services Inc Linear sweeping magnetron sputtering cathode and scanning in-line system for arc-free reactive deposition and high target utilization
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JP4721878B2 (ja) * 2005-11-22 2011-07-13 キヤノンアネルバ株式会社 スパッタリング装置
JP4984211B2 (ja) * 2006-03-06 2012-07-25 大日本印刷株式会社 スパッタ装置およびスパッタ方法
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US20110266141A1 (en) * 2010-04-29 2011-11-03 Primestar Solar, Inc. System and methods for high-rate co-sputtering of thin film layers on photovoltaic module substrates

Also Published As

Publication number Publication date
CN105908145B (zh) 2018-11-09
TW201326440A (zh) 2013-07-01
US20130112546A1 (en) 2013-05-09
SG11201401977UA (en) 2014-05-29
CN105908145A (zh) 2016-08-31
EP2773792B1 (en) 2017-06-14
EP2773792A4 (en) 2015-04-22
TWI473900B (zh) 2015-02-21
KR20140116067A (ko) 2014-10-01
WO2013109333A4 (en) 2013-10-31
WO2013109333A2 (en) 2013-07-25
US20160268110A1 (en) 2016-09-15
JP2014532813A (ja) 2014-12-08
EP2773792A2 (en) 2014-09-10
WO2013109333A3 (en) 2013-09-06
CN104114741A (zh) 2014-10-22
CN104114741B (zh) 2016-06-22
SG10201603937RA (en) 2016-08-30
MY185148A (en) 2021-04-30
KR102054533B1 (ko) 2019-12-10

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