SG11201401977UA - Linear scanning sputtering system and method - Google Patents

Linear scanning sputtering system and method

Info

Publication number
SG11201401977UA
SG11201401977UA SG11201401977UA SG11201401977UA SG11201401977UA SG 11201401977U A SG11201401977U A SG 11201401977UA SG 11201401977U A SG11201401977U A SG 11201401977UA SG 11201401977U A SG11201401977U A SG 11201401977UA SG 11201401977U A SG11201401977U A SG 11201401977UA
Authority
SG
Singapore
Prior art keywords
sputtering system
linear scanning
scanning sputtering
linear
sputtering
Prior art date
Application number
SG11201401977UA
Inventor
David Ward Brown
Vinay Shah
Terry Pederson
Terry Bluck
Original Assignee
Intevac Inc
David Ward Brown
Vinay Shah
Terry Pederson
Terry Bluck
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intevac Inc, David Ward Brown, Vinay Shah, Terry Pederson, Terry Bluck filed Critical Intevac Inc
Publication of SG11201401977UA publication Critical patent/SG11201401977UA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/345Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455Movable magnets
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32733Means for moving the material to be treated
    • H01J37/32752Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761Continuous moving
    • H01J37/32779Continuous moving of batches of workpieces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899Multiple chambers, e.g. cluster tools
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3417Arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/345Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452Magnet distribution

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
SG11201401977UA 2011-11-04 2012-11-02 Linear scanning sputtering system and method SG11201401977UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161556154P 2011-11-04 2011-11-04
PCT/US2012/063432 WO2013109333A2 (en) 2011-11-04 2012-11-02 Linear scanning sputtering system and method

Publications (1)

Publication Number Publication Date
SG11201401977UA true SG11201401977UA (en) 2014-05-29

Family

ID=48222970

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201603937RA SG10201603937RA (en) 2011-11-04 2012-11-02 Linear scanning sputtering system and method
SG11201401977UA SG11201401977UA (en) 2011-11-04 2012-11-02 Linear scanning sputtering system and method

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201603937RA SG10201603937RA (en) 2011-11-04 2012-11-02 Linear scanning sputtering system and method

Country Status (10)

Country Link
US (2) US20130112546A1 (en)
EP (1) EP2773792B1 (en)
JP (1) JP2014532813A (en)
KR (1) KR102054533B1 (en)
CN (2) CN104114741B (en)
ES (1) ES2637391T3 (en)
MY (1) MY185148A (en)
SG (2) SG10201603937RA (en)
TW (1) TWI473900B (en)
WO (1) WO2013109333A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140332376A1 (en) * 2011-11-04 2014-11-13 Intevac, Inc. Sputtering system and method using counterweight
US20160133445A9 (en) * 2011-11-04 2016-05-12 Intevac, Inc. Sputtering system and method for highly magnetic materials
US10106883B2 (en) 2011-11-04 2018-10-23 Intevac, Inc. Sputtering system and method using direction-dependent scan speed or power
EP2854155B1 (en) 2013-09-27 2017-11-08 INDEOtec SA Plasma reactor vessel and assembly, and a method of performing plasma processing
PL3095890T3 (en) * 2014-01-14 2019-02-28 The Batteries Spółka z ograniczoną odpowiedzialnością Method for applying thin-film coatings and manufacturing line for implementing same
KR20160142288A (en) * 2014-02-20 2016-12-12 인테벡, 인코포레이티드 Sputtering system and method using direction-dependent scan speed or power
EP3108028B1 (en) * 2014-02-20 2020-04-08 Intevac, Inc. Sputtering system using counterweight
CN105803410B (en) 2016-04-29 2018-07-17 京东方科技集团股份有限公司 The method of magnetic control sputtering device, magnetron sputtering apparatus and magnetron sputtering
JP6579726B2 (en) * 2017-06-28 2019-09-25 株式会社アルバック Sputtering equipment
CN111527236B (en) * 2018-06-19 2022-10-28 株式会社爱发科 Sputtering method and sputtering apparatus
GB2588939B (en) * 2019-11-15 2022-12-28 Dyson Technology Ltd Sputter deposition apparatus and method
CN111074240A (en) * 2020-02-11 2020-04-28 沧州天瑞星光热技术有限公司 Gas path arrangement method for improving vacuum coating atmosphere uniformity
CN113337798B (en) * 2021-04-13 2022-12-27 电子科技大学 Film preparation method, high-flux combined material chip preparation method and system

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DE4107505A1 (en) * 1991-03-08 1992-09-10 Leybold Ag METHOD FOR OPERATING A SPUTTER, AND DEVICE FOR CARRYING OUT THE METHOD
JP3076463B2 (en) * 1992-11-11 2000-08-14 キヤノン株式会社 Thin film forming equipment
JP3514488B2 (en) * 1993-06-30 2004-03-31 株式会社アルバック Magnetron sputtering method and apparatus
JP3390579B2 (en) * 1995-07-03 2003-03-24 アネルバ株式会社 Method and apparatus for producing thin film for liquid crystal display
JPH0959772A (en) * 1995-08-21 1997-03-04 Nippon Sheet Glass Co Ltd Magnetron sputtering method
JPH09111453A (en) * 1995-10-13 1997-04-28 Shin Etsu Chem Co Ltd Vacuum substrate transporting device and vacuum substrate transporting method
US5907220A (en) * 1996-03-13 1999-05-25 Applied Materials, Inc. Magnetron for low pressure full face erosion
KR100262768B1 (en) * 1996-04-24 2000-08-01 니시히라 순지 Sputter deposition system
CN1188816A (en) * 1997-01-21 1998-07-29 日本板硝子株式会社 Magnetron sputtering method
US5873989A (en) * 1997-02-06 1999-02-23 Intevac, Inc. Methods and apparatus for linear scan magnetron sputtering
JPH1143766A (en) * 1997-07-23 1999-02-16 Matsushita Electric Ind Co Ltd Formation of thin film and device therefor
JP2000192239A (en) * 1998-12-22 2000-07-11 Matsushita Electric Ind Co Ltd Sputtering method and sputtering device
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JP2004131846A (en) * 2002-09-19 2004-04-30 Ulvac Japan Ltd Method and apparatus for manufacturing low reflective film
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US7513982B2 (en) * 2004-01-07 2009-04-07 Applied Materials, Inc. Two dimensional magnetron scanning for flat panel sputtering
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Also Published As

Publication number Publication date
US20130112546A1 (en) 2013-05-09
CN105908145B (en) 2018-11-09
TW201326440A (en) 2013-07-01
TWI473900B (en) 2015-02-21
SG10201603937RA (en) 2016-08-30
JP2014532813A (en) 2014-12-08
ES2637391T3 (en) 2017-10-13
MY185148A (en) 2021-04-30
KR20140116067A (en) 2014-10-01
US20160268110A1 (en) 2016-09-15
EP2773792B1 (en) 2017-06-14
KR102054533B1 (en) 2019-12-10
CN104114741B (en) 2016-06-22
CN104114741A (en) 2014-10-22
EP2773792A2 (en) 2014-09-10
WO2013109333A2 (en) 2013-07-25
WO2013109333A4 (en) 2013-10-31
EP2773792A4 (en) 2015-04-22
CN105908145A (en) 2016-08-31
WO2013109333A3 (en) 2013-09-06

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