MY185148A - Linear scanning sputtering method - Google Patents

Linear scanning sputtering method

Info

Publication number
MY185148A
MY185148A MYPI2014001255A MYPI2014001255A MY185148A MY 185148 A MY185148 A MY 185148A MY PI2014001255 A MYPI2014001255 A MY PI2014001255A MY PI2014001255 A MYPI2014001255 A MY PI2014001255A MY 185148 A MY185148 A MY 185148A
Authority
MY
Malaysia
Prior art keywords
target
magnet arrangement
rotating zone
sputtering
sputtering target
Prior art date
Application number
MYPI2014001255A
Inventor
David Ward Brown
Vinay Shah
Terry Pederson
Terry Bluck
Original Assignee
Intevac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intevac Inc filed Critical Intevac Inc
Publication of MY185148A publication Critical patent/MY185148A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/32779—Continuous moving of batches of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A sputtering system having a processing chamber with an inlet port and an outlet port, and a sputtering target (262, 364, 464) positioned on a wall of the processing chamber. A movable magnet arrangement is positioned behind the sputtering target (262, 364, 464) and reciprocally slides behinds the target. A conveyor continuously transports substrates ( 150, 250, 350, 450, 650) at a constant speed past the sputtering target, such that at any given time, several substrates face the target between the leading edge (243) and the traiIing edge (247). The movable magnet arrangement slides at a speed that is at least several times faster than the constant speed of the conveyor. A rotating zone is defined behind the leading edge (243) and trailing edge (247) of the target, wherein the magnet arrangement decelerates when it enters the rotating zone and accelerates as it reverses direction of sliding within the rotating zone. (Figure 2)
MYPI2014001255A 2011-11-04 2012-11-02 Linear scanning sputtering method MY185148A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161556154P 2011-11-04 2011-11-04
PCT/US2012/063432 WO2013109333A2 (en) 2011-11-04 2012-11-02 Linear scanning sputtering system and method

Publications (1)

Publication Number Publication Date
MY185148A true MY185148A (en) 2021-04-30

Family

ID=48222970

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2014001255A MY185148A (en) 2011-11-04 2012-11-02 Linear scanning sputtering method

Country Status (10)

Country Link
US (2) US20130112546A1 (en)
EP (1) EP2773792B1 (en)
JP (1) JP2014532813A (en)
KR (1) KR102054533B1 (en)
CN (2) CN105908145B (en)
ES (1) ES2637391T3 (en)
MY (1) MY185148A (en)
SG (2) SG10201603937RA (en)
TW (1) TWI473900B (en)
WO (1) WO2013109333A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10106883B2 (en) 2011-11-04 2018-10-23 Intevac, Inc. Sputtering system and method using direction-dependent scan speed or power
US20140332376A1 (en) * 2011-11-04 2014-11-13 Intevac, Inc. Sputtering system and method using counterweight
US20160133445A9 (en) * 2011-11-04 2016-05-12 Intevac, Inc. Sputtering system and method for highly magnetic materials
EP2854155B1 (en) * 2013-09-27 2017-11-08 INDEOtec SA Plasma reactor vessel and assembly, and a method of performing plasma processing
WO2015108432A1 (en) * 2014-01-14 2015-07-23 Айрат Хамитович ХИСАМОВ Method for applying thin-film coatings and manufacturing line for implementing same
CN106414794A (en) * 2014-02-20 2017-02-15 因特瓦克公司 Sputtering system and method using direction-dependent scan speed or power
KR102327285B1 (en) * 2014-02-20 2021-11-16 인테벡, 인코포레이티드 Sputtering system and method using counterweight
CN105803410B (en) 2016-04-29 2018-07-17 京东方科技集团股份有限公司 The method of magnetic control sputtering device, magnetron sputtering apparatus and magnetron sputtering
TWI686493B (en) 2017-06-28 2020-03-01 日商愛發科股份有限公司 Sputtering apparatus
JP7066841B2 (en) * 2018-06-19 2022-05-13 株式会社アルバック Sputtering method, sputtering equipment
GB2588939B (en) * 2019-11-15 2022-12-28 Dyson Technology Ltd Sputter deposition apparatus and method
CN111074240A (en) * 2020-02-11 2020-04-28 沧州天瑞星光热技术有限公司 Gas path arrangement method for improving vacuum coating atmosphere uniformity
CN113337798B (en) * 2021-04-13 2022-12-27 电子科技大学 Film preparation method, high-flux combined material chip preparation method and system

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JPS6199936A (en) * 1984-10-19 1986-05-19 Matsushita Electric Ind Co Ltd Manufacture of magnetic recording medium
DE4107505A1 (en) * 1991-03-08 1992-09-10 Leybold Ag METHOD FOR OPERATING A SPUTTER, AND DEVICE FOR CARRYING OUT THE METHOD
JP3076463B2 (en) * 1992-11-11 2000-08-14 キヤノン株式会社 Thin film forming equipment
JP3514488B2 (en) * 1993-06-30 2004-03-31 株式会社アルバック Magnetron sputtering method and apparatus
JP3390579B2 (en) * 1995-07-03 2003-03-24 アネルバ株式会社 Method and apparatus for producing thin film for liquid crystal display
JPH0959772A (en) 1995-08-21 1997-03-04 Nippon Sheet Glass Co Ltd Magnetron sputtering method
JPH09111453A (en) * 1995-10-13 1997-04-28 Shin Etsu Chem Co Ltd Vacuum substrate transporting device and vacuum substrate transporting method
US5907220A (en) * 1996-03-13 1999-05-25 Applied Materials, Inc. Magnetron for low pressure full face erosion
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Also Published As

Publication number Publication date
WO2013109333A3 (en) 2013-09-06
TWI473900B (en) 2015-02-21
CN104114741B (en) 2016-06-22
JP2014532813A (en) 2014-12-08
KR20140116067A (en) 2014-10-01
EP2773792A4 (en) 2015-04-22
WO2013109333A4 (en) 2013-10-31
ES2637391T3 (en) 2017-10-13
TW201326440A (en) 2013-07-01
EP2773792A2 (en) 2014-09-10
SG10201603937RA (en) 2016-08-30
WO2013109333A2 (en) 2013-07-25
US20160268110A1 (en) 2016-09-15
CN105908145B (en) 2018-11-09
KR102054533B1 (en) 2019-12-10
US20130112546A1 (en) 2013-05-09
SG11201401977UA (en) 2014-05-29
EP2773792B1 (en) 2017-06-14
CN105908145A (en) 2016-08-31
CN104114741A (en) 2014-10-22

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