SG10201603937RA - Linear scanning sputtering system and method - Google Patents

Linear scanning sputtering system and method

Info

Publication number
SG10201603937RA
SG10201603937RA SG10201603937RA SG10201603937RA SG10201603937RA SG 10201603937R A SG10201603937R A SG 10201603937RA SG 10201603937R A SG10201603937R A SG 10201603937RA SG 10201603937R A SG10201603937R A SG 10201603937RA SG 10201603937R A SG10201603937R A SG 10201603937RA
Authority
SG
Singapore
Prior art keywords
sputtering system
linear scanning
scanning sputtering
linear
sputtering
Prior art date
Application number
SG10201603937RA
Inventor
David Ward Brown
Vinay Shah
Terry Pederson
Terry Bluck
Original Assignee
Intevac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intevac Inc filed Critical Intevac Inc
Publication of SG10201603937RA publication Critical patent/SG10201603937RA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/32779—Continuous moving of batches of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
SG10201603937RA 2011-11-04 2012-11-02 Linear scanning sputtering system and method SG10201603937RA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201161556154P 2011-11-04 2011-11-04

Publications (1)

Publication Number Publication Date
SG10201603937RA true SG10201603937RA (en) 2016-08-30

Family

ID=48222970

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201401977UA SG11201401977UA (en) 2011-11-04 2012-11-02 Linear scanning sputtering system and method
SG10201603937RA SG10201603937RA (en) 2011-11-04 2012-11-02 Linear scanning sputtering system and method

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG11201401977UA SG11201401977UA (en) 2011-11-04 2012-11-02 Linear scanning sputtering system and method

Country Status (10)

Country Link
US (2) US20130112546A1 (en)
EP (1) EP2773792B1 (en)
JP (1) JP2014532813A (en)
KR (1) KR102054533B1 (en)
CN (2) CN105908145B (en)
ES (1) ES2637391T3 (en)
MY (1) MY185148A (en)
SG (2) SG11201401977UA (en)
TW (1) TWI473900B (en)
WO (1) WO2013109333A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10106883B2 (en) 2011-11-04 2018-10-23 Intevac, Inc. Sputtering system and method using direction-dependent scan speed or power
US20140332376A1 (en) * 2011-11-04 2014-11-13 Intevac, Inc. Sputtering system and method using counterweight
US20160133445A9 (en) * 2011-11-04 2016-05-12 Intevac, Inc. Sputtering system and method for highly magnetic materials
EP2854155B1 (en) * 2013-09-27 2017-11-08 INDEOtec SA Plasma reactor vessel and assembly, and a method of performing plasma processing
KR102092815B1 (en) * 2014-01-14 2020-04-24 더 배터리즈 스폴카 제트 오그라닉조나 오드포비드지알노스시아 Method for applying thin-film coatings and manufacturing line for implementing same
KR20160142288A (en) * 2014-02-20 2016-12-12 인테벡, 인코포레이티드 Sputtering system and method using direction-dependent scan speed or power
EP3108028B1 (en) * 2014-02-20 2020-04-08 Intevac, Inc. Sputtering system using counterweight
CN105803410B (en) * 2016-04-29 2018-07-17 京东方科技集团股份有限公司 The method of magnetic control sputtering device, magnetron sputtering apparatus and magnetron sputtering
US11473188B2 (en) 2017-06-28 2022-10-18 Ulvac, Inc. Sputtering apparatus
CN111527236B (en) * 2018-06-19 2022-10-28 株式会社爱发科 Sputtering method and sputtering apparatus
GB2588939B (en) * 2019-11-15 2022-12-28 Dyson Technology Ltd Sputter deposition apparatus and method
CN111074240A (en) * 2020-02-11 2020-04-28 沧州天瑞星光热技术有限公司 Gas path arrangement method for improving vacuum coating atmosphere uniformity
CN113337798B (en) * 2021-04-13 2022-12-27 电子科技大学 Film preparation method, high-flux combined material chip preparation method and system

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6199936A (en) * 1984-10-19 1986-05-19 Matsushita Electric Ind Co Ltd Manufacture of magnetic recording medium
DE4107505A1 (en) * 1991-03-08 1992-09-10 Leybold Ag METHOD FOR OPERATING A SPUTTER, AND DEVICE FOR CARRYING OUT THE METHOD
JP3076463B2 (en) * 1992-11-11 2000-08-14 キヤノン株式会社 Thin film forming equipment
JP3514488B2 (en) 1993-06-30 2004-03-31 株式会社アルバック Magnetron sputtering method and apparatus
JP3390579B2 (en) * 1995-07-03 2003-03-24 アネルバ株式会社 Method and apparatus for producing thin film for liquid crystal display
JPH0959772A (en) * 1995-08-21 1997-03-04 Nippon Sheet Glass Co Ltd Magnetron sputtering method
JPH09111453A (en) * 1995-10-13 1997-04-28 Shin Etsu Chem Co Ltd Vacuum substrate transporting device and vacuum substrate transporting method
US5907220A (en) * 1996-03-13 1999-05-25 Applied Materials, Inc. Magnetron for low pressure full face erosion
KR100262768B1 (en) * 1996-04-24 2000-08-01 니시히라 순지 Sputter deposition system
CN1188816A (en) * 1997-01-21 1998-07-29 日本板硝子株式会社 Magnetron sputtering method
US5873989A (en) * 1997-02-06 1999-02-23 Intevac, Inc. Methods and apparatus for linear scan magnetron sputtering
JPH1143766A (en) * 1997-07-23 1999-02-16 Matsushita Electric Ind Co Ltd Formation of thin film and device therefor
JP2000192239A (en) * 1998-12-22 2000-07-11 Matsushita Electric Ind Co Ltd Sputtering method and sputtering device
JP4453850B2 (en) * 1999-06-01 2010-04-21 キヤノンアネルバ株式会社 Sputtering film forming apparatus and sputtered film forming method
JP2004131846A (en) * 2002-09-19 2004-04-30 Ulvac Japan Ltd Method and apparatus for manufacturing low reflective film
US7101466B2 (en) * 2003-09-19 2006-09-05 Kdf Electronic + Vacuum Services Inc Linear sweeping magnetron sputtering cathode and scanning in-line system for arc-free reactive deposition and high target utilization
US7513982B2 (en) * 2004-01-07 2009-04-07 Applied Materials, Inc. Two dimensional magnetron scanning for flat panel sputtering
JP4721878B2 (en) * 2005-11-22 2011-07-13 キヤノンアネルバ株式会社 Sputtering equipment
JP4984211B2 (en) * 2006-03-06 2012-07-25 大日本印刷株式会社 Sputtering apparatus and sputtering method
US8557093B2 (en) * 2007-03-22 2013-10-15 Sunpower Corporation Deposition system with electrically isolated pallet and anode assemblies
JP4336739B2 (en) * 2007-06-04 2009-09-30 キヤノンアネルバ株式会社 Deposition equipment
US8114256B2 (en) * 2007-11-30 2012-02-14 Applied Materials, Inc. Control of arbitrary scan path of a rotating magnetron
JPWO2009093598A1 (en) * 2008-01-21 2011-05-26 株式会社アルバック Sputter deposition method and sputter deposition apparatus
WO2011058812A1 (en) * 2009-11-10 2011-05-19 キヤノンアネルバ株式会社 Film formation method by means of sputtering apparatus, and sputtering apparatus
US20110266141A1 (en) * 2010-04-29 2011-11-03 Primestar Solar, Inc. System and methods for high-rate co-sputtering of thin film layers on photovoltaic module substrates

Also Published As

Publication number Publication date
CN105908145A (en) 2016-08-31
EP2773792A4 (en) 2015-04-22
EP2773792A2 (en) 2014-09-10
KR102054533B1 (en) 2019-12-10
US20130112546A1 (en) 2013-05-09
TW201326440A (en) 2013-07-01
CN105908145B (en) 2018-11-09
KR20140116067A (en) 2014-10-01
CN104114741A (en) 2014-10-22
MY185148A (en) 2021-04-30
WO2013109333A4 (en) 2013-10-31
WO2013109333A2 (en) 2013-07-25
CN104114741B (en) 2016-06-22
US20160268110A1 (en) 2016-09-15
SG11201401977UA (en) 2014-05-29
JP2014532813A (en) 2014-12-08
WO2013109333A3 (en) 2013-09-06
TWI473900B (en) 2015-02-21
ES2637391T3 (en) 2017-10-13
EP2773792B1 (en) 2017-06-14

Similar Documents

Publication Publication Date Title
SG10201603937RA (en) Linear scanning sputtering system and method
GB201117278D0 (en) Method and system
ZA201309700B (en) Electrodesalination system and method
IL228003A0 (en) System and method for application attestation
EP2577423A4 (en) Teleprompting system and method
EP2529302A4 (en) Processor-cache system and method
GB2492036B (en) Method and system
HK1173582A1 (en) Buffering method and system
EP2782704A4 (en) System and method for cardboard-handling
EP2789120A4 (en) Collaboration system and method
ZA201309750B (en) Gasification system and method
EP2749927A4 (en) Information processing system and information processing method
GB201007267D0 (en) System and method
SG10201600588TA (en) Improved inventory system and method therefor
EP2795559A4 (en) Rewards system and method
EP2674911A4 (en) Differing region detection system and differing region detection method
EP2759971A4 (en) Commodity introduction system and commodity introduction method
EP2611741A4 (en) Cleaning method and system
GB2496834B (en) Object location method and system
EP2987085A4 (en) Low-miss-rate and low-miss-penalty cache system and method
SG2014003578A (en) Desalinization system and desalinization method
EP2666258A4 (en) Collaboration system and method
EP2577577A4 (en) System and method for research analytics
HK1196030A1 (en) Ultra-wideband assembly system and method
GB201012956D0 (en) System and method