CN106414794A

CN106414794A - Sputtering system and method using direction-dependent scan speed or power

Info

Publication number: CN106414794A
Application number: CN201580017462.7A
Authority: CN
Inventors: V·沙阿; A·里波萨恩; T·布鲁克; V·库德里亚夫采夫
Original assignee: Intevac Inc
Current assignee: Intevac Inc
Priority date: 2014-02-20
Filing date: 2015-02-18
Publication date: 2017-02-15
Also published as: JP2017508892A; KR20160142288A; SG11201606930XA; WO2015130532A1; DE112015000895T5; TW201542850A; TWI519665B

Abstract

A sputtering system having a processing chamber with an inlet port and an outlet port, and a sputtering target positioned on a wall of the processing chamber. A movable magnet arrangement is positioned behind the sputtering target and reciprocally slides behind the target. A conveyor continuously transports substrates at a constant speed past the sputtering target, such that at any given time, several substrates face the target between the leading edge and the trailing edge. The movable magnet arrangement slides at a speed that is at least several times faster than the constant speed of the conveyor. A rotating zone is defined behind the leading edge and trailing edge of the target, wherein the magnet arrangement decelerates when it enters the rotating zone and accelerates as it reverses direction of sliding within the rotating zone. Magnet power and/or speed varies as function of direction of magnet travel.

Description

Sputtering system and method using orientation-dependent scanning speed or power

Related application

The application is entitled " linear scanning sputtering system and the method (Linear that on November 2nd, 2012 submits to Scanning Sputtering System and Method) " U. S. application No.13/667,976 part continuation application, It requires the U.S. Provisional Application No.61/556 submitting on November 4th, 2011,154 priority, the content of this two applications Passed through to quote to be fully incorporated herein.

Technical field

The application is related to sputtering system, for example, be used for the manufacture in integrated circuit, solaode, flat faced display etc. In journey on substrate deposition film sputtering system.

Background technology

Sputtering system is well known in the art.Disclose one kind in United States Patent (USP) 5,873,989 and there is line Property scanning magnetron sputtering system example, be wherein used for the magnetron sputter source that deposits a material on substrate and include therefrom Sputter target (target), the magnetic near the setting of this target for plasma being limited to the surface of this target of material Body assembly and the drive component for scanning this magnet assembly with respect to this target.This sputter procedure depends on gaseous plasma Being formed and subsequently make acceleration of ions from this plasma in this target of body.The source material of this target is by by reaching Ion corroded via energy transmission and ejected by the form of in neutral particle (single atom, cluster or molecular cluster). When these neutral particles are ejected, they are advanced in a linear fashion to affect and to coat the table of this substrate as needed Face.

One of problem that will solve in such systems is the uniformity of the film being formed over the substrate.In this system Will solve another problem is that target utilization.Specifically, due to the magnet particles of linear magnetron, therefore in target Liang Ge edge occur excessively to sputter, thus producing two deep trench along (that is, parallel to) this scanning direction.Therefore, should Target must be replaced, although most target material surface remains available.Hereinbefore quote disclosed in the patent of ' 989 For the multiple methods preventing this phenomenon from occurring.

However, previous still unsolved another target utilization problem is the erosion that the edge in the scan period occurs. That is, when magnet reaches one end of target, scanning direction is reversed.In order to obtain film equality, ' 989 patent is built View slows down the scanning speed of the either end towards target.However, this leads to enhanced target as sputter, thus hanging down with scanning direction The excessive erosion at the two ends of target is led in straight direction.

Therefore, exist in this field and deposit and there is the target utilization that improve for being capable of uniform film The demand of sputtering system.

Content of the invention

Following content of the invention is included to provide the basic understanding for certain aspects of the invention and feature.In this invention Holding is not the extensive overview ot to the present invention, and equally it is not intended as specifically identifying the unit of the important of the present invention or key Element or description the scope of the present invention.Its sole purpose is some concepts assuming the present invention in simplified form using as hereinafter The preamble being discussed in more detail presenting.

Disclosed herein is that a kind of raising is formed at the uniformity of the film on substrate and equally obtains high yield Sputtering system and method.One embodiment provides a kind of system, and wherein substrate continuously moves in the front of this sputtering target material. Magnetron is by with the speed linearity ground particles than the high at least several times of speed with regard to substrate motion.Magnetron is by substrate Repeatedly scan in the direction advanced and subsequently in the direction reversed.In its most of traveling process, magnetron is with perseverance Fixed speed moves.However, when the ending that it is advanced close to it, it slows down.Subsequently, when starting its row in the opposite direction When entering, it accelerates till it reaches this constant speed.Deceleration/acceleration is 0.5g in one embodiment, and It is 1g in another embodiment.This improves the utilization rate of target.According to another embodiment, in continuous scanning, change this magnetic control The turning point of pipe, to limit turn-around zone.This also contributes to improve target utilization.

A kind of sputtering system has the process chamber with ingress port and outlet port and is positioned in this process chamber Sputtering target material on wall.Movable magnet arrangement is positioned in after sputtering target material, and reciprocally slides after this target Dynamic.Substrate is continuously transmitted through this sputtering target material with constant speed so that at any given moment by conveyer belt, if Dry substrate surface is pointed to the target between leading edge and trailing edge.Movable magnet arrangement is with least more some soon than the constant speed of conveyer Speed again is slided.Limit rotary area after the leading edge of target and trailing edge, wherein this magnet is arranged in it and enters this rotation Slow down during region and accelerate when it reverses glide direction in this rotary area.

According to some embodiments, a kind of for by material from target as sputter to substrate on system include：Carrier, it can be grasped Make with transferring substrate in downstream direction；And one or more process chambers of inclusion the first process chamber, substrate is in downstream direction In pass through this first process chamber.First process chamber can have sputtering target material and magnet, this magnet operable with downstream direction In with downstream scanning speed and in the updrift side contrary with downstream direction with less than downstream scanning speed upstream scanning Speed is crossed this sputtering target material and is scanned.

According to some embodiments, a kind of process chamber includes sputtering target material and magnet, and this magnet is operable in downstream direction In with downstream scanning speed and in the updrift side contrary with downstream direction with less than downstream scanning speed upstream scanning Speed is crossed this sputtering target material and is scanned.

According to some embodiments, a kind of sputtering method includes for substrate being transmitted through sputtering target material with velocity of downstream, and leads to Cross in downstream direction with downstream scanning speed and in the updrift side contrary with downstream direction with less than downstream scan speed The upstream scanning speed of degree is scanned across the magnet of this sputtering target material, induces the sputtering on substrate for the target material.

According to some embodiments, a kind of for by material from target as sputter to substrate on system include：Carrier, it can be grasped Make with transferring substrate in downstream direction；And include the first process chamber one or more process chambers, substrate pass through this first Process chamber passes through in downstream direction.First process chamber can have sputtering target material and magnet, this magnet operable with downstream In direction with downstream scan power level and in the updrift side contrary with downstream direction with more than downstream scan power water Flat upstream scan power level is crossed this sputtering target material and is scanned.

According to some embodiments, a kind of process chamber includes sputtering target material and magnet, this magnet operable with downstream side To in downstream scan power level and in the updrift side contrary with downstream direction with more than downstream scan power level Upstream scan power level cross this sputtering target material and be scanned.

According to some embodiments, a kind of sputtering method includes for substrate being transmitted through sputtering target material with velocity of downstream, and leads to Cross in downstream direction with downstream scan power level and in the updrift side contrary with downstream direction to sweep more than downstream The magnet of sputtering target material is crossed in the upstream scan power horizontal sweep retouching power level, induces target material splashing on substrate Penetrate.

According to other aspects of the invention, there is provided a kind of for settling chamber sputtering arrangement, including：Target, it has Front surface and rear surface simultaneously have setting sputter material on its front surface；Movable magnet mechanism, its have be configured to use The magnet being reciprocally scanned in the back side near target；And counterweight, it is configured for fast with magnet identical Degree but contrary direction be reciprocally scanned.By make counterweight with magnet same speed but contrary direction move, subtract Lack the vibration in system and load, and magnet can have been accelerated by being scanned with much higher speed and with much higher speed And deceleration.This movable magnet mechanism includes moving element, and it is powered reciprocally to move this target and counterweight, wherein magnet and Counterweight is mechanically coupled to moving element.This moving element can be deformable stretching element, the example of this stretching element Including belt, Timing Belt, chain etc..Motor is coupled to moving element and thinks that this moving element is powered, and controller carries For signal to start this motor.

According to other side, there is provided a kind of method for operating sputtering system and one kind are used for operating sputtering system Controller, wherein, this controller operable repeatedly to scan this magnetic pole according to following：Updrift side repeatedly scan away from From X, subsequently reverse and in downstream scanning distance Y；When reaching the edge of this target, in downstream direction repeatedly scanning distance X, Subsequently reverse and in upstream scanning distance Y；Wherein, X is longer than Y, and X is shorter than the length of this target.In one embodiment, X It is to be constant or distance | X |-| Y | keeps constant with least one of Y.

Features described above and aspect can " be mixed and matched " in any design system, thus benefit expected from obtaining.One Kind of specific system may include all features in features described above and aspect and aspect to obtain maximum benefit, and another system can Concrete condition according to this system or application are implementing the only one in these features or two.

Brief description

Combined in the specification and the accompanying drawing of the part that constitutes patent specification is illustrated the present invention Embodiment, and be used for explaining and illustrating the principle of the present invention together with description.Accompanying drawing is intended to diagrammatically illustrate The principal character of exemplary embodiment.Accompanying drawing is not intended as describing each feature of practical embodiments, is not also described Element relative size, and be not necessarily to scale.

Fig. 1 shows of a kind of system for processing substrate using sputter magnetron according to an embodiment Point.

Fig. 2 shows the cross section along the line A-A in Fig. 1.

Fig. 3 shows the cross section along the line B-B in Fig. 1.

Fig. 4 A shows another embodiment, and wherein substrate is supported by the conveyor, and this conveyer is continuously with constant speed Degree moves, and Fig. 4 B shows another embodiment, and wherein counterweight is used for balancing the motion of this scanning magnetic pole.

Fig. 5 shows a kind of system architecture of the sputtering chamber using the sputtering chamber such as shown in Fig. 4 A and Fig. 4 B etc Example.

Fig. 6 shows a kind of embodiment of detachable pole, and this detachable pole can be used for appointing in the disclosed embodiments One.

Fig. 7 A-7D is the song of the deposit uniformity using constant chip transmission speed and different magnet scanning speeds Line.

Fig. 8 A is a kind of curve showing that the uniformity increases with magnet scanning speed and declines.

Fig. 8 B shows under the speed higher than scanning speed, the unusual shape to magnet scanning speed for the film deposit uniformity Another curve of state (strange behavior).

Fig. 8 C is the enlarged drawing of the part in Fig. 8 B centre circle.

Specific embodiment

It is now described with reference to the drawings the embodiment of creative sputtering system.Different embodiments can be used for locating Manage different substrates or for obtaining different benefits, such as yield, the film uniformity, target utilization etc..According to being managed to obtain The result obtaining, can utilize different feature disclosed herein partly or entirely, individually or in combination, thus flat Weighing apparatus advantage and demand and constraint.Therefore, some benefits will be emphasized with reference to different embodiments, but is not limited to disclosed Embodiment.

Fig. 1 shows of a kind of system for processing substrate using sputter magnetron according to an embodiment Point.In fig. 1 it is shown that three rooms 100,105 and 110, but three points on each side show to use any amount Room.In addition although there is illustrated three specific rooms, but will arrange not to be then required using room depicted herein 's.On the contrary, it is possible to use other rooms are arranged and other types of room can be plugged between as directed room.For example, first Room 100 can be load lock chamber, and second Room 105 is sputtering chamber, and the 3rd Room 110 is another load lock chamber.

For purposes of illustration, in the example of fig. 1, three rooms 100,105 and 110 are sputtering chamber；Each room is by it The vacuum pump 102,104,106 of itself evacuates.Each process chamber has transmission zone 122,124 and 126 and processes section 132nd, 134 and 136.Substrate 150 is installed on substrate carrier 120.In this embodiment, substrate 150 is protected by its periphery Handle, i.e. any one of its surface need not be touched, this is because this two surfaces are all by by splashing on the both sides of this substrate Penetrate target material to be made.Carrier 12 0 has one group of wheel 121 straddling in rail (not shown in figure 1).In a reality Apply in example, wheel is magnetized to provide more preferable traction and stability.Carrier 12 0 straddles the rail in being arranged on transmission zone On road, so that substrate is positioned in this process section.In one embodiment, (do not shown in Fig. 1 using linear electric machine arrangement Go out) provide motive power externally to carrier 12 0.It is assumed that carrier 12 0 is via dress when being sputtering chamber when three rooms 100,105 and 110 Carry locking arrangement to enter and exit this system.

Fig. 2 shows the cross section along the line A-A in Fig. 1.For simplicity, figure 2 illustrates without its load The substrate 250 of body, it should be appreciated that, it is maintained at from start to finish during the process that substrate 250 executes in the system of fig. 1 On substrate carrier 120, and continuously transmitted between the chambers by this substrate carrier, as in fig. 2 shown in arrow.This institute Show in embodiment, in each room 200,205 and 210, both sides are processed to substrate 250.Equally shown in fig. 2 It is the isolating valve 202,206 keeping apart each room in the fabrication process；However, due to this substrate in one embodiment continuously Mobile, therefore isolating valve can be replaced with simple fence gate (gate) or is eliminated.

Each room all includes the movable magnetron 242,244,246 being installed on linear track 242 ', 244 ', 246 ', Make its scan plasma on the surface of target 262, as shown in double-head arrow.When substrate by room on carrier under Roam all around the would in be transmitted when, continuously particles magnet.As shown in regard to magnet 242, when magnet reaches before target 262 During edge 243, its reverse direction trailing edge 247 towards target 262 is advanced.When it reaches trailing edge 247, its reverse direction again And be scanned towards leading edge 243.It is repeated continuously this scanning process.It is noted that in this specific example, downstream direction Abreast position to its trailing edge 247 from its leading edge 243 with target 262.Equally, as described herein, on leading edge is also referred to as Trip position or region, and trailing edge is also referred to as downstream position or region.In in this respect, upstream and downstream is therefore by with reference to lining The direct of travel at bottom is limited, and this substrate, before it reaches downstream trailing edge 247, arrives at it in the traveling of target 262 Reach upstream leading edge 243.

Fig. 3 shows the cross section along the line B-B in Fig. 1.Substrate 350 is shown as being installed on carrier 320.Carrier 320 have the wheel 321 straddling in rail 324.Wheel 321 can be magnetic, and in this case, track 324 can be by Paramagnetic material is made.In this embodiment, to pass through linear electric machine 326 mobile for carrier, although can using other motive power and/ Or arrangement.This room is evacuated, and the precursor gases of such as argon etc are fed in room to keep plasma.By applying Rf bias can arrive the movable magnetron 344 after target 364, and plasma is ignited and is maintained.

Fig. 4 A shows another embodiment, and wherein, substrate 450 is supported on conveyer 440, and this conveyer continuously moves Employ in " through (pass-by) " process, have a kind of in order to the arrangement through fence gate 402 and 406.When only need sputter substrate Side when, for example when manufacture solaode when, this arrangement is particularly advantageous.For example, several substrates can be by abreast Positioning is so that process this several substrate simultaneously.Illustration in Fig. 4 A shows three substrates side by side, i.e. vertical along one Three substrates arranged in the line of the direction of motion, as shown by arrows.It is said that substrate can be embarked on journey and be arranged in column.In illustration Point represents that supply in column direction for the substrate can be " annular ", and this is because their quantity is by the conveyor constantly Supplement.Thus, substrate is disposed in " annular " supply or line direction and the arrangement in n row, and the wherein n in the example of Fig. 4 A is 3, Although n can be any integer.Additionally, in such an embodiment, when target 464 is with respect to the longer dimension of substrate, then with Belt and continuously move substrate in the lower section of target 464, several substrates can be processed simultaneously in column and with embarking on journey.For example, When using three row (i.e. three chips side by side), can by this target be sized to process four being in three row Individual substrate, thus processes 12 substrates simultaneously.As it was previously stated, magnetron 444 between the leading edge of target and trailing edge with substrate The parallel direction of direct of travel in linear movement back and forth, as shown in double-head arrow.Plasma 403 is in the phase of target 464 The traveling of magnetron 444 is followed, thus material is splashed to substrate 450 from target 464 in tossing about.

Fig. 4 B shows another embodiment, and it has scanned magnetic pole 442 and counterweight 446.Specifically, linearly back and forth Scan this magnetic pole 442, as shown in double-head arrow.Locate at either end, scanning needs reverse direction.This reverse in direction may result in this Vibration in system, and geard-down speed and accelerating velocity may be limited.In order to reduce this impact, provide counterweight 446 as flat Weighing apparatus part, and by the motion to check this magnetic pole for the middle scanning in the opposite direction.It reduce vibrating in this system and allow this The quick deceleration of magnetic pole and acceleration.

In the specific example of Fig. 4 B, magnetic pole 442 and counterweight 446 are slidably coupled to linear track assembly 442, make Obtain magnetic pole 442 and counterweight 446 freely can be slided on linear rail assembly 445.From the point of view of the visual angle of Fig. 4 B, this linear track Assembly is considered single track, but it can be arranged in order to magnetic support poles 442 and counterweight 446 so that linearly back and forth certainly Several tracks being moved by ground.Magnetic pole 442 is attached to the side of moving element 448, and counterweight 446 is attached to activity unit The opposite side of part 448.Moving element 448 can be the conveyer of rotation on wheel 441 and 443, such as chain, belt, tooth Shape (timing) belt etc..One of wheel (for example, wheel 443) is by motor 449 via coupling mechanism 447 (for example, profile of tooth skin Band) power supply.Motor 449 is controlled by controller 480, and this controller 480 is to motor 449 sending signal so that wheel 443 to circle round Turn so that this conveyer 448 makes to slide to and fro in magnetic pole 442 in rail 442, make counterweight 446 middle cunning in the opposite direction simultaneously Dynamic.That is, this counterweight moves with the speed same speed with magnet but in the opposite direction.This arrangement is generally notable Reduce the load on motor and system.It decreases vibration, and is obtained in that high speed and high acceleration and high deceleration Degree.

Fig. 5 shows a kind of example of the system of system etc shown in such as Fig. 4 A or 4B.Air (ATM) conveyer 500 continuously substrate are brought in this system, and substrate is subsequently transmitted in this system memory, on the conveyor to pass through Coarse vacuum load lock chamber 505, fine vacuum load lock chamber 510, and selectively, through transfer chamber 515.When in this transmission When continuously moving on machine, processed by one or more continuous rooms 520 with back substrate, be there is illustrated two.Substrate Subsequently continue to selectable transfer chamber 525 on the conveyor, continue at fine vacuum load lock chamber 530, low true Empty load lock chamber 535, and continue at air conveyer 540, to exit this system.

Fig. 6 shows the embodiment of the movable magnetron that can be used in any one of above-described embodiment.In figure 6, Substrate 650 is made to move with constant speed on conveyer 640.Target material assembly 664 is positioned in the top of substrate, and activity Magnetron 644 linearly vibrates after target material assembly back and forth, as shown in double-head arrow.Plasma 622 follows this magnetron, Thus leading to the sputtering of the zones of different from target.In this embodiment, in normal traveling process, the speed of magnetron is permanent Fixed, and at least several times of the speed for substrate.Calculate this speed so that pass through phase time of this sputtering chamber in substrate Between, this substrate is by this magnetron sputtering in mobile several times.For example, the speed fast five to ten of the speeds comparable substrate of magnetron Times so that when the whole length that this conveyer makes substrate be moved through target, if scanning magnet after target to and fro Dry time, to precipitate multiple layers over the substrate.

As shown in Figure 6, in this embodiment, each substrate has length Ls, and this length Ls is by the traveling in conveyer belt Limited in direction.Equally, this target has length Lt, and this length Lt is limited in the direct of travel of conveyer, The direct of travel of this conveyer is parallel with the direct of travel of magnet.In this embodiment, length Lt of target is than the length of substrate The long several times of Ls.For example, target length grows four times than pitch length (pitch length), and this pitch length is by fixed to become one Individual substrate length adds the gap length S between two substrates on this conveyer.That is, pitch P=(Ls+S).

The problem of the linear movement of the magnetron after target is, when this magnetron reaches leading edge or the trailing edge of target, Its stopping in the opposite direction middle setting in motion.Therefore, compared with the major surfaces of target, the edge of target is etched more Many.When the erosion of the edge of target exceedes specification, even if the central authorities of this target remain available it is also desirable to enter to target Row is changed.This problem is solved using various embodiments as described below.

According to an embodiment, side-play amount E and F are specified respectively at the leading edge of target and trailing edge.When magnetron reaches During this side-play amount, it is slowed down with specified speed, such as 0.5g, 1g etc..At the ending of this side-play amount, magnetron changes direction And accelerated with specified speed.This is carried out at the two ends of the traveling of magnetron, i.e. enter at the leading edge of target and trailing edge OK.

According to another embodiment it is stipulated that rotary area, such as region E and F be by respectively at the leading edge of target and trailing edge Specified.When this magnetron reaches any one of rotary area, it changes traveling side at any in rotary area To.However, As time goes on, magnetron change direction at the difference in rotary area.This passes through the illustration in Fig. 6 Give illustration.As indicated, in moment t₁Place, the point of reverse direction is designated as F₁.In moment t₂Place, the point of reverse direction is referred to It is set to F₂, and closer to target trailing edge for point F₁, but still in the region being designated as F.In moment t₃Place, inverse Turn the point F in direction₃It is the trailing edge further close to this target, simultaneously in moment t_nPlace, point F_nWith respect to this target trailing edge by Gradually retreat.However, all of point F_iIt is in the F of region.Occur on similar process region E on another side, i.e. at this The leading edge of target occurs.

The selection for the point reversing scanning direction can be realized using various ways.For example, it is possible to scan each In, at every twice sweep or x time scanning after randomly choosed.On the contrary, it is possible to implement a kind of program, wherein each In scanning, this point by displacement Y in one direction, till reaching the end in this region, and subsequently open by these points Begin towards end opposite displacement Y.On the other hand, this motion is designed to by amount of movement Z in one direction, and with Afterwards in the next step in the opposite direction middle amount of movement-w and produce a kind of interleaving mode, wherein, | w |<|Z|.

In embodiment described herein, due to it has been found that changing scanning speed negatively affect substrate On the film uniformity, therefore process the period in, with this magnetron of constant velocity sweep.It should be noted that in substrate in target In the case of continuously moving before material, it is unadvisable for slowing down or accelerate this magnet array on reason region in this place, even if It is for controlling film thickness uniformity.

In the disclosed embodiment, so that many substrates is moved on the conveyor can be considered as with constant speed movement The continuously substrate of (endless).Scanning speed must be selected to, and is given good equal on the substrate of constant speed movement Evenness.In these embodiments, specific use is made up of starting position, stop position, acceleration and deceleration, to control target to utilize Rate.This has the effect of the deep trench occurring when reversing this motion that trails in end.

Pole design is used for reducing the deep trench at the top of plasma track and bottom.Because with a relatively high speed Degree is scanned, thus propagation power in the whole surface of substrate, therefore can be using thicker target or can will be higher Power use in target.Because each substrate sees that the multiple target of plasma passes through (pass), till starting and stop Position can with each through and change, and will not see in terms of the film uniformity and change this scanning between each process The effect of length.That is although being described as the embodiment of Fig. 6 so that rotary area is designed to be in processing region Outside, but as described herein, when making substrate continuously move, this is not required in that.On the contrary, rotary area can be located In this processing region.

For example, according to an embodiment, this system is used for manufacturing solar-electricity with the speed of per hour 2400 substrates Pond.This conveyer makes substrate continuously move with the speed of 35 millimeters of (mm)/seconds (s).With at least speed of 250mm/s (i.e., greatly Speed several times in this substrate transport) scanning magnetron.Target and magnetron are designed to so that the stroke of magnetron scanning It is about 260mm.This provides the film uniformity more than 97%.Acceleration/deceleration can be in, in 0.5g, the feelings that distance is about 6.4mm Set under condition, or 1g be in distance for that distance about half in the case of set.As shown in Figure 6, Ke Yitong Cross one or more controllers 680 and carry out magnetron scanning speed, magnetic control tube power, substrate gait of march (for example, transmission machine speed Degree) etc. multiple calculating and control it.

Fig. 7 A-7D is the song of the deposit uniformity using constant chip transmission speed and different magnet scanning speeds Line.Fig. 7 A be for magnet scanning speed be chip transmission speed 5% the uniformity curve.For example, chip is transmitted Speed is 35mm/s, scans magnet with 1.75mm/s.The consequent film uniformity is 90%, and it is for production such as solar energy It is unsuitable for the device of battery etc.When magnet scanning speed being brought up to the 7.5% of chip speed, under the uniformity Drop to 86%, as shown in fig.7b.Additionally, when speed brings up to the 10% of chip speed, the uniformity drops to 82%, and And when speed brings up to the 12.5% of chip speed, the uniformity is further lowered into 78%.Thus it appears that improving magnet scanning Speed result in the corresponding minimizing of the film uniformity, thus showing that this magnet scanning speed should be a little portion of chip transmission speed Divide (fraction).This conclusion supports, wherein, the uniformity is with magnet scanning speed by curve as shown in Figure 8 A further Improve and decline.

However, the curve of Fig. 8 A is also shown for, the maximum obtainable uniformity can be about 90%.As described above, it is this The uniformity is all unacceptable for many processes.Therefore, it is further investigated, thus result in Fig. 8 b's Curve.The curve of Fig. 8 B shows the anomic to magnet scanning speed for the film deposit uniformity.It is true that with magnet scanning Speed improves, and the film uniformity declines.However, under certain conditions, improve further with magnet scanning speed, the uniformity is unexpected Start to increase so that under the magnet scanning speed of the about three times of chip transmission speed, obtaining about 98% uniformity peak value. Hereafter observe the of short duration decline of the uniformity, but subsequently when magnet scanning speed be chip transmission speed about 5 times and beyond when, The uniformity is resumed and remains high level, and it is shown in the curve of Fig. 8 C.As seen in fig. 8 c, it is in Fig. 8 B centre circle Partial enlarged drawing, under exceeding 5 times of speed of chip transmission speed, the uniformity is kept above 97%, and in not this biography Under about 10 times of speed of defeated speed, the uniformity remains above 98%.From the angle of mechanical load and Machine Design it is not recommended that relatively High speed, and the uniformity seem higher speed is not improved more.Thus, design complexities and potential relatively The expense of high maintenance aspect may not guarantee that the scanning speed being related to beyond 10 times of chip transmission speed.

In certain embodiments, the direction advanced according to magnet, scanning speed can be different.For example, when magnet exists When scanning this target in downstream direction (that is, with substrate motion identical direction), it can with than it updrift side (that is, with The contrary direction of substrate motion) in when scanning this target fast constant speed move.This velocity variations can be provided for deposition The more preferable control of speed and the improved deposit uniformity of offer.In certain embodiments, this velocity variations can be used for balancing Magnet crosses the length of the time through being spent of this substrate in downstream and upstream.That is, the speed of magnet scanning can To be selected to so that " relative " speed (that is, the speed that magnet is advanced with respect to target) is phase in this two direct of travels With.For example, if the speed of substrate is Ss, and the relative velocity of magnet is St, then when magnet is advanced in downstream direction When, it should be scanned with speed St+Ss, and when it is advanced in updrift side, it should be scanned with speed St-Ss.

Additionally, in certain embodiments, magnetic control tube power can be changed by the direction advanced according to magnet.For example, work as magnetic When body scans this target in downstream direction, can apply than work(more or less of when it scans this target in updrift side Rate.This changed power can provide more preferable control and the improved deposit uniformity of offer for sedimentation rate.In some realities Apply in example, this changed power can be used for balancing the power being applied to this magnet in the process that this substrate is crossed in downstream and upstream Amount.

In certain embodiments, the change of speed and power aspect all can by by combine in the way of according to magnet scanning direction To use.That is, as explained above, in order to produce constant relative scanning speed, when magnet is downstream advanced When, scan in the way of it is fast when upstream advancing than it.This means in downstream direction, with its upstream traveling phase Magnet takes less time on given target region ratio.Therefore, according to an embodiment, magnetic control tube power downstream and/ Or change during the traveling of upstream so that the power total amount being passed to this target during the scanning of whole downstream is equal to upper The power total amount transmitted during trip scanning.Thus, if the general power transmitted during a scanning direction be Pd and The time that one scanning direction (any situation) is spent is t_s, then it is applied to the power of magnetron in each direction It is calculated as W=Pd/t_s, wherein, according to this direct of travel, scanning speed St+Ss or St Ss are multiplied by by length Lt of target To calculate t_s.

On the other hand, it is constant or makes during upstream is scanned in the upstream speed of such as magnet and velocity of downstream Compared with during scanning in downstream, substrate be exposed to magnet scanning time shorter in the case of, during scanning in downstream Power level is compared, and it is probably favourable for improving the power during the scanning of upstream.If that is, substrate is exposed to be derived from The time of the sputtering of this target is shorter during the traveling of the upstream of magnet, then sputtering power should be by during the traveling of upstream Increase so that depositing over the substrate more materials within the unit interval.Difference power can be calculated as so that in unit In time deposition quantity of material over the substrate be identical when magnet scans in upstream or downstream direction.Namely Say, although the power during the upstream and downstream scanning of magnet can be adjusted to so that splashing from target within the unit interval The material penetrated is different during the upstream and downstream of magnet is advanced, but is deposited on the quantity of material on substrate within the unit interval It is identical.For example, during the traveling of the upstream of magnet, sputtering power can be enhanced so that existing from the quantity of material of target as sputter Unit interval internal ratio is high during the scanning of the downstream of magnet, but is deposited on quantity of material on substrate within the unit interval in magnet It is identical during upstream and downstream scanning.

Using above disclosure, can process chamber be set, this process chamber includes：Sputtering target material, this sputtering target material is constructed Become for substrate in downstream direction from there through；And magnet, this magnet is operable to sweep with downstream in downstream direction Retouch power level and in the updrift side contrary with downstream direction, this sputtering target material is crossed with upstream scan power level and enter Row scanning, this upstream scan power level is less than or greater than upstream scan power level.Magnet can be contrary positioned at target Reverse direction at the rotary area at two ends, and wherein, the continuous reverse at each rotary area occurs in different positions Place.These different positions can be randomly chosen.In terms of length, target can be more than substrate.Multiple substrates can be by with predetermined section Away from arranging and pass through this process chamber, and this magnet can have the length at least four times of this pitch.

This scanning reverses and can be spread in whole sweep length, and is not restricted to turn-around zone.For example, this magnet can The distance of scanned X mm, and subsequently reversed and-Y the mm that advances distance, wherein | X |>|-Y|.Subsequently reversing again should The traveling of magnet, and it is scanned another X mm and subsequently by another-Y mm of reverse.By this way, this magnet advance X Mm the-Y mm that retracts, but because the absolute growth of X is longer than the absolute growth of Y, therefore, scanning is enterprising in the whole length of target OK.Subsequently, when magnet reaches the edge of target, the distance of its traveling-X mm, i.e. in opposite direction with previous traveling X mm in direction.It is reversed and travel distance Y mm.Repeat this scanning so that magnet scanning reverses and spreads over the big of target On region, and it is not limited to edge.Although in certain embodiments, X and Y is constant, in other embodiments, X and Y can Can for example be changed according to the situation of target.

In certain embodiments, target scanning distance can be about 240mm altogether.This magnetic pole starts in initial position, And scan the part of this total distance, such as 100mm before carrying out first direction reverse in each scanning.This magnetic pole is subsequent It is not returned exactly to this initial position, and be to return to the deviation post with respect to the skew of this initial position.For always returning Return distance for the situation of 60mm for, side-play amount in one example can be 40mm.This pattern subsequent quilt in this example It is repeated 6 times to cover 240mm altogether.Therefore, this scanning inversion point spreads in the whole surface of this target and is not limited It is formed on reverse region.In certain embodiments, this with high acceleration/deceleration (about 4-5g, wherein, g=9.80665 rice every two The power second) and about 1000mm/s scanning speed implementing, for the scanning hence for single 240mm length, obtain with The suitable net velocity of the scanning speed of 210mm/s.Certainly, these values be as an example and can be changed according to specific application Become.The method allow will start/stop area be distributed over a large area, this is because they move in downstream or updrift side Moving, thus improve target utilization, maintaining the good uniformity of the thickness on substrate.In certain embodiments, make It is programmed to set upstream scanning speed, downstream scanning speed, start-stop acceleration/deceleration, upstream Power, downstream work(with one kind Rate, accelerate during power and power during slowing down controller realizing completing of the method.Each in these parameters Individual all can controlled individually by this controller and change, to realize desired effect.

Additionally, in certain embodiments, upstream and downstream start and stop bit is put and is all spaced for continuous scanning every time Open identical distance (this distance is shorter than total scanning distance) so that beginnings/stop position with each continuous through and move. For example, with regard to Fig. 6, in all of point F_iPlace, F_iAnd E_iThe distance between keep constant.Additionally, in the embodiment in fig 6, region F_iAnd E_iIt is shown as being restricted to the edge of target.However, as in the formerly example of previous paragraphs explain as, turning point Need not be restricted to the edge of this target, but may extend on the contrary in the whole length of substrate.

Be described herein various features so that different embodiments can have one or more needed for concrete application Feature.In any embodiment, upstream and downstream scanning speed can have identical or different value.In any embodiment, Upstream and downstream start with stop area in, acceleration and deceleration can have identical or different value.Equally, arbitrary In embodiment, in upstream and downstream, the value being applied to the power of magnetron can be same or different.In arbitrary reality Apply in example, it can be same or different that upstream and downstream start and stop bit is put.In any embodiment, upstream and downstream Start and stop area is spaced apart identical distance (this distance is shorter than total scanning distance) so that beginning/stop position is with every Secondary continuous through and move.

Further it is provided that a kind of sputtering method, this sputtering method includes：Substrate is transmitted across in downstream direction sputtering target Material；And by downstream direction with downstream scan power level and in the updrift side contrary with downstream direction with big The magnet of this sputtering target material is crossed in upstream scan power horizontal sweep in this downstream scan power level, and induction target material arrives Sputtering on substrate.This magnet can at the rotary area positioned at the opposite end of target reverse direction, and wherein, at each Continuous reverse at rotary area betides at different positions.Different positions can be randomly chosen.

Using foregoing description, there is provided a kind of for the system from target material deposition to multiple substrates, this system by material Including：Conveyer, this conveyer operable to transmit this multiple substrate in downstream direction；And process chamber, make substrate in downstream This process chamber is passed through, this process chamber has target, and this target has parallel with downstream direction and than n substrate combination in direction The length of length length；And magnet, this magnet is operable to cross this target and is reciprocally scanned.In some embodiments In, in the scanning process along downstream direction, by downstream scan power level be applied to target and along with downstream side During being scanned in contrary updrift side, upstream scan power level is applied to target, and upstream Power May differ from downstream power level.In other embodiments, counterweight be configured to with magnet same speed but contrary side To being scanned.In other other embodiments, conveyer transmits n row substrate, and wherein n is integer.In other embodiments, Magnet reverses scanning direction in the various location of the length along target, and wherein, reverse direction is along the length migration of target.? In other embodiments, downstream scanning speed and upstream scanning speed are configured to, so as to maintain between magnet and substrate along The constant speed of arbitrary scanning direction.

It is to be understood that process specifically described herein and technology are not inherently related to any specific equipment and can To be implemented by any suitable combination of part.Additionally, polytype can be used according to teaching specifically described herein Fexible unit.Describe the present invention with respect to specific example, these specific examples are all illustrative in all respects, And it is nonrestrictive.It will be understood to those skilled in the art that, many different combinations all will be applied to puts into practice the present invention.

Additionally, by the practice considering patent specification disclosed herein and the present invention, other embodiment party of the present invention Case all will be apparent to those skilled in the art.The many aspects of described embodiment and/or part all can be independent Ground or used in the way of any combination.This is intended to, and should be considered as being only exemplary by patent specification and example, this The real scope and spirit of invention are by represented by following claims.

Claims (according to the 19th article of modification of treaty)

1. a kind of for by material from target material deposition to substrate on system, including：

Carrier, described carrier is operable to transmit described substrate in downstream direction；And

Including one or more process chambers of settling chamber, described substrate passes through one or more of places in described downstream direction Reason room, described settling chamber includes：

Target；

Magnet assembly, described magnet assembly be operable to in described downstream direction with downstream scanning speed and with described It is scanned across the magnetic pole of described target with upstream scanning speed in the contrary updrift side of downstream direction；And,

Controller, described controller is operable to control described scanning speed according to scanning direction, wherein, described scanning speed Spend the upstream depending on described magnet assembly or downstream direction of travel but different.

2. system according to claim 1, wherein, described upstream scanning speed is slower than described downstream scanning speed.

3. system according to claim 1, wherein, described downstream scanning speed passes through described first process than described substrate Fast at least 5 times of the speed of room.

4. system according to claim 1, wherein, described downstream scanning speed and described upstream scanning speed are set, To maintain the constant speed with respect to described substrate in described magnetic pole one scan in office direction.

5. system according to claim 1, wherein, described controller will differ from during the scanning of the downstream of described magnetic pole Power level during the upstream scanning of described magnetic pole puts on described target.

6. system according to claim 5, wherein, is passed to the general power of described target during the scanning of whole downstream It is equal to the general power being passed to described target during the scanning of whole upstream.

7. system according to claim 1, wherein, described magnetic pole is in the rotary area of the opposite end positioned at described target Place's reverse direction, and the continuous reverse generation at each of described rotary area place is in different positions.

8. system according to claim 7, wherein, described different position is randomly selected.

9. system according to claim 1, wherein, described controller is operable to according to following repeatedly scanning Magnetic pole：

In updrift side repeatedly scanning distance X, subsequently reverse and in downstream scanning distance Y；

When reaching the edge of described target, in downstream direction repeatedly scanning distance X, subsequently reverse and in upstream scanning distance Y；

Wherein, X is longer than Y, and X is shorter than the length of described target.

10. system according to claim 9, wherein, at least one of X and Y is constant.

11. systems according to claim 9, wherein, distance | X |-| Y | keeps constant.

12. systems according to claim 1, wherein, described target is more than described substrate in terms of length.

13. systems according to claim 1, wherein, multiple substrates are arranged with predetermined pitch and are passed through described process chamber, Described target has the length at least four times of described pitch.

14. systems according to claim 1, wherein, described settling chamber also include being operable to with described magnetic pole phase The counterweight being scanned in anti-direction.

15. systems according to claim 1, wherein, described magnet assembly includes：

Linear track assembly, wherein, described magnetic pole coupled freely to straddle on described linear track assembly；

Counterweight, described counterweight coupled freely to straddle on described linear track assembly；

Conveyer, the opposite side that described conveyer has the side being coupled to described magnetic pole and is coupled to described counterweight； And,

Motor, described motor is coupled to be powered for described conveyer with basis from the signal of described controller.

A kind of 16. methods, including：

Substrate is transmitted through target with velocity of downstream；And

By the function of the downstream scanned as magnet in contrary downstream direction and updrift side and updrift side not Same speed is repeatedly scanned across the magnet of described target, induces the deposition on described substrate for the target material.

17. methods according to claim 16, wherein, described upstream scanning speed is less than described downstream scanning speed.

18. methods according to claim 16, wherein, described downstream scanning speed is bigger by least five than described upstream speed Times.

19. methods according to claim 16, wherein, methods described is additionally included in the opposite end positioned at described target The scanning direction of described magnet is reversed at rotary area, and inverse in the continuous direction at each of described rotary area place Forward life in different positions.

20. methods according to claim 19, wherein, are randomly chosen described different position.

Claims

Target；

Controller, described controller is operable to control described scanning speed according to scanning direction.

10. system according to claim 9, wherein, at least one of X and Y is constant.

11. systems according to claim 9, wherein, distance | X |-| Y | keeps constant.

A kind of 16. methods, including：

Substrate is transmitted through target with velocity of downstream；And

Repeatedly scanned by the speed as the function of magnet scanning direction in contrary downstream direction and updrift side Cross the magnet of described target, induce the deposition on described substrate for the target material.