ES2282103T3 - Instalacion de grabado electroquimico y procedimiento para el grabado de un cuerpo que va a grabarse. - Google Patents

Instalacion de grabado electroquimico y procedimiento para el grabado de un cuerpo que va a grabarse. Download PDF

Info

Publication number
ES2282103T3
ES2282103T3 ES00922440T ES00922440T ES2282103T3 ES 2282103 T3 ES2282103 T3 ES 2282103T3 ES 00922440 T ES00922440 T ES 00922440T ES 00922440 T ES00922440 T ES 00922440T ES 2282103 T3 ES2282103 T3 ES 2282103T3
Authority
ES
Spain
Prior art keywords
electrode
chamber
electrolyte
electrochemical etching
cell according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES00922440T
Other languages
English (en)
Spanish (es)
Inventor
Hans Artman
Wilhelm Frey
Franz Laermer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Application granted granted Critical
Publication of ES2282103T3 publication Critical patent/ES2282103T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S204/00—Chemistry: electrical and wave energy
    • Y10S204/12—Electrochemical machining

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
ES00922440T 1999-04-01 2000-03-17 Instalacion de grabado electroquimico y procedimiento para el grabado de un cuerpo que va a grabarse. Expired - Lifetime ES2282103T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19914905A DE19914905A1 (de) 1999-04-01 1999-04-01 Elektrochemische Ätzanlage und Verfahren zur Ätzung eines Ätzkörpers
DE19914905 1999-04-01

Publications (1)

Publication Number Publication Date
ES2282103T3 true ES2282103T3 (es) 2007-10-16

Family

ID=7903273

Family Applications (1)

Application Number Title Priority Date Filing Date
ES00922440T Expired - Lifetime ES2282103T3 (es) 1999-04-01 2000-03-17 Instalacion de grabado electroquimico y procedimiento para el grabado de un cuerpo que va a grabarse.

Country Status (7)

Country Link
US (1) US6726815B1 (https=)
EP (1) EP1181400B1 (https=)
JP (1) JP4511741B2 (https=)
KR (1) KR100698798B1 (https=)
DE (2) DE19914905A1 (https=)
ES (1) ES2282103T3 (https=)
WO (1) WO2000060143A1 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100451132B1 (ko) * 2001-11-08 2004-10-02 홍석인 다공성 실리콘을 이용한 효소고정화 전극 제작 방법
US7998335B2 (en) * 2005-06-13 2011-08-16 Cabot Microelectronics Corporation Controlled electrochemical polishing method
RU2308786C1 (ru) * 2006-05-26 2007-10-20 Государственное образовательное учреждение высшего профессионального образования "Брянская государственная инженерно-технологическая академия" Раствор для электрохимического растворения кремния
US7935230B2 (en) * 2006-06-29 2011-05-03 Semitool, Inc. Electro-chemical processor
US7927469B2 (en) * 2006-08-25 2011-04-19 Semitool, Inc. Electro-chemical processor
US7909967B2 (en) * 2006-07-13 2011-03-22 Semitool, Inc. Electro-chemical processor
DE102007024199B4 (de) 2007-05-24 2015-06-25 Robert Bosch Gmbh Herstellungsverfahren eines mikromechanischen Bauelements mit porösifizierter Membran
KR101374932B1 (ko) * 2007-09-28 2014-03-17 재단법인서울대학교산학협력재단 확산 제한 식각과정에 의한 수평 변환 다공성 실리콘 광학필터의 제조방법 및 그에 의한 필터구조
US8906218B2 (en) 2010-05-05 2014-12-09 Solexel, Inc. Apparatus and methods for uniformly forming porous semiconductor on a substrate
US9076642B2 (en) 2009-01-15 2015-07-07 Solexel, Inc. High-Throughput batch porous silicon manufacturing equipment design and processing methods
CN102422370A (zh) * 2009-05-12 2012-04-18 日本轻金属株式会社 电解电容器用铝电极板的制造方法
JP2011026638A (ja) * 2009-07-22 2011-02-10 Shin Etsu Handotai Co Ltd 陽極酸化装置
CN102844883B (zh) 2010-02-12 2016-01-20 速力斯公司 用于制造光电池和微电子器件的半导体衬底的双面可重复使用的模板
KR101347681B1 (ko) 2010-09-24 2014-01-06 솔렉셀, 인크. 고생산성 배치 다공성 실리콘 제조 장치 디자인 및 가공 방법
WO2013126033A2 (en) * 2010-11-03 2013-08-29 Solexel, Inc. Apparatus and methods for uniformly forming porous semiconductor on a substrate
JP6009268B2 (ja) * 2012-08-09 2016-10-19 芝浦メカトロニクス株式会社 洗浄液生成装置、洗浄液生成方法、基板洗浄装置及び基板洗浄方法
RU2537488C2 (ru) * 2012-08-22 2015-01-10 Закрытое акционерное общество "Инструменты нанотехнологии" Устройство травления поверхности для металлографического анализа
US9217206B2 (en) * 2013-09-27 2015-12-22 Sunpower Corporation Enhanced porosification
CN112820828B (zh) * 2019-11-15 2023-08-04 夏泰鑫半导体(青岛)有限公司 半导体装置及其制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5462929A (en) * 1977-10-28 1979-05-21 Sumitomo Electric Ind Ltd Surface treating method for aluminum and aluminum alloy
JP3149060B2 (ja) * 1992-01-23 2001-03-26 キヤノン株式会社 陽極化成装置、陽極化成方法及びシリコン基板の製造方法
US5458755A (en) * 1992-11-09 1995-10-17 Canon Kabushiki Kaisha Anodization apparatus with supporting device for substrate to be treated
JP3416190B2 (ja) * 1993-03-23 2003-06-16 キヤノン株式会社 陽極化成装置及び陽極化成方法
SE9300881L (sv) * 1993-03-17 1994-06-06 Herman Georg Grimmeiss Anordning för elektrolytisk oxidation av kiselskivor
DE69724269T2 (de) * 1996-09-06 2004-06-09 Obducat Ab Verfahren für das anisotrope ätzen von strukturen in leitende materialien
JPH11243076A (ja) * 1998-02-26 1999-09-07 Canon Inc 陽極化成方法及び陽極化成装置並びに半導体基板の製造方法

Also Published As

Publication number Publication date
JP4511741B2 (ja) 2010-07-28
US6726815B1 (en) 2004-04-27
DE50014121D1 (de) 2007-04-12
KR20010112373A (ko) 2001-12-20
DE19914905A1 (de) 2000-10-05
WO2000060143A1 (de) 2000-10-12
EP1181400A1 (de) 2002-02-27
EP1181400B1 (de) 2007-02-28
JP2002541324A (ja) 2002-12-03
KR100698798B1 (ko) 2007-03-26

Similar Documents

Publication Publication Date Title
ES2282103T3 (es) Instalacion de grabado electroquimico y procedimiento para el grabado de un cuerpo que va a grabarse.
JPH05503321A (ja) 空間的に一様な電解研摩および電解エッチングを行うための方法および装置
JP2002528649A5 (https=)
US10435808B2 (en) Etching apparatus used for photo electrochemical etching of semiconductor substrate
JP2002541324A5 (https=)
FR2527010A1 (fr) Element galvanique, notamment cellule comportant des electrodes metallique et a gaz
JPH10137763A (ja) 電解イオン水生成装置及び半導体製造装置
KR102590393B1 (ko) 기판의 전기화학적 처리 방법 및 집적 회로 장치
CN106796963A (zh) 用于形成多孔硅层的方法和装置
JP2016537210A (ja) 電子アシスト技術を用いたワイヤアレイの移行および製造
US7208069B2 (en) Device for etching semiconductors with a large surface area
JP3416190B2 (ja) 陽極化成装置及び陽極化成方法
US5611898A (en) Reaction chamber having in situ oxygen generation
JP3337705B2 (ja) 陽極化成装置及び方法
US4216071A (en) Electrodeposition cell
JP3149060B2 (ja) 陽極化成装置、陽極化成方法及びシリコン基板の製造方法
CN118566110A (zh) 电化学腐蚀设备和电化学腐蚀的方法
CN202543375U (zh) 光辅助多孔硅电化学腐蚀槽
CN104746127B (zh) 用于电化学法制备多孔硅的双槽装置及制备多孔硅的方法
US7833395B2 (en) Electrode system for an electrochemical sensor
US1486546A (en) Electrolytic separation
JP4925658B2 (ja) 電解槽
JPH09164388A (ja) イオン水生成装置、イオン水生成方法及び半導体装置の製造方法
JPH0837173A (ja) 化成装置
JP2002353191A (ja) 半導体基板上の導電膜の除去方法および除去装置