JP4511741B2 - 電気化学的エッチング装置及びエッチングボデーのエッチングのための方法 - Google Patents

電気化学的エッチング装置及びエッチングボデーのエッチングのための方法 Download PDF

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JP4511741B2
JP4511741B2 JP2000609630A JP2000609630A JP4511741B2 JP 4511741 B2 JP4511741 B2 JP 4511741B2 JP 2000609630 A JP2000609630 A JP 2000609630A JP 2000609630 A JP2000609630 A JP 2000609630A JP 4511741 B2 JP4511741 B2 JP 4511741B2
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electrode
etching
chamber
cell according
electrolyte
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JP2000609630A
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Japanese (ja)
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JP2002541324A5 (https=
JP2002541324A (ja
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アルトマン ハンス
フライ ウィルヘルム
レールマー フランツ
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Robert Bosch GmbH
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Robert Bosch GmbH
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S204/00—Chemistry: electrical and wave energy
    • Y10S204/12—Electrochemical machining

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
JP2000609630A 1999-04-01 2000-03-17 電気化学的エッチング装置及びエッチングボデーのエッチングのための方法 Expired - Lifetime JP4511741B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19914905A DE19914905A1 (de) 1999-04-01 1999-04-01 Elektrochemische Ätzanlage und Verfahren zur Ätzung eines Ätzkörpers
DE19914905.4 1999-04-01
PCT/DE2000/000857 WO2000060143A1 (de) 1999-04-01 2000-03-17 Elektrochemische ätzanlage und verfahren zur ätzung eines ätzkörpers

Publications (3)

Publication Number Publication Date
JP2002541324A JP2002541324A (ja) 2002-12-03
JP2002541324A5 JP2002541324A5 (https=) 2009-11-19
JP4511741B2 true JP4511741B2 (ja) 2010-07-28

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ID=7903273

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JP2000609630A Expired - Lifetime JP4511741B2 (ja) 1999-04-01 2000-03-17 電気化学的エッチング装置及びエッチングボデーのエッチングのための方法

Country Status (7)

Country Link
US (1) US6726815B1 (https=)
EP (1) EP1181400B1 (https=)
JP (1) JP4511741B2 (https=)
KR (1) KR100698798B1 (https=)
DE (2) DE19914905A1 (https=)
ES (1) ES2282103T3 (https=)
WO (1) WO2000060143A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100451132B1 (ko) * 2001-11-08 2004-10-02 홍석인 다공성 실리콘을 이용한 효소고정화 전극 제작 방법
US7998335B2 (en) * 2005-06-13 2011-08-16 Cabot Microelectronics Corporation Controlled electrochemical polishing method
RU2308786C1 (ru) * 2006-05-26 2007-10-20 Государственное образовательное учреждение высшего профессионального образования "Брянская государственная инженерно-технологическая академия" Раствор для электрохимического растворения кремния
US7935230B2 (en) * 2006-06-29 2011-05-03 Semitool, Inc. Electro-chemical processor
US7927469B2 (en) * 2006-08-25 2011-04-19 Semitool, Inc. Electro-chemical processor
US7909967B2 (en) * 2006-07-13 2011-03-22 Semitool, Inc. Electro-chemical processor
DE102007024199B4 (de) 2007-05-24 2015-06-25 Robert Bosch Gmbh Herstellungsverfahren eines mikromechanischen Bauelements mit porösifizierter Membran
KR101374932B1 (ko) * 2007-09-28 2014-03-17 재단법인서울대학교산학협력재단 확산 제한 식각과정에 의한 수평 변환 다공성 실리콘 광학필터의 제조방법 및 그에 의한 필터구조
US8906218B2 (en) 2010-05-05 2014-12-09 Solexel, Inc. Apparatus and methods for uniformly forming porous semiconductor on a substrate
US9076642B2 (en) 2009-01-15 2015-07-07 Solexel, Inc. High-Throughput batch porous silicon manufacturing equipment design and processing methods
CN102422370A (zh) * 2009-05-12 2012-04-18 日本轻金属株式会社 电解电容器用铝电极板的制造方法
JP2011026638A (ja) * 2009-07-22 2011-02-10 Shin Etsu Handotai Co Ltd 陽極酸化装置
CN102844883B (zh) 2010-02-12 2016-01-20 速力斯公司 用于制造光电池和微电子器件的半导体衬底的双面可重复使用的模板
KR101347681B1 (ko) 2010-09-24 2014-01-06 솔렉셀, 인크. 고생산성 배치 다공성 실리콘 제조 장치 디자인 및 가공 방법
WO2013126033A2 (en) * 2010-11-03 2013-08-29 Solexel, Inc. Apparatus and methods for uniformly forming porous semiconductor on a substrate
JP6009268B2 (ja) * 2012-08-09 2016-10-19 芝浦メカトロニクス株式会社 洗浄液生成装置、洗浄液生成方法、基板洗浄装置及び基板洗浄方法
RU2537488C2 (ru) * 2012-08-22 2015-01-10 Закрытое акционерное общество "Инструменты нанотехнологии" Устройство травления поверхности для металлографического анализа
US9217206B2 (en) * 2013-09-27 2015-12-22 Sunpower Corporation Enhanced porosification
CN112820828B (zh) * 2019-11-15 2023-08-04 夏泰鑫半导体(青岛)有限公司 半导体装置及其制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5462929A (en) * 1977-10-28 1979-05-21 Sumitomo Electric Ind Ltd Surface treating method for aluminum and aluminum alloy
JP3149060B2 (ja) * 1992-01-23 2001-03-26 キヤノン株式会社 陽極化成装置、陽極化成方法及びシリコン基板の製造方法
US5458755A (en) * 1992-11-09 1995-10-17 Canon Kabushiki Kaisha Anodization apparatus with supporting device for substrate to be treated
JP3416190B2 (ja) * 1993-03-23 2003-06-16 キヤノン株式会社 陽極化成装置及び陽極化成方法
SE9300881L (sv) * 1993-03-17 1994-06-06 Herman Georg Grimmeiss Anordning för elektrolytisk oxidation av kiselskivor
DE69724269T2 (de) * 1996-09-06 2004-06-09 Obducat Ab Verfahren für das anisotrope ätzen von strukturen in leitende materialien
JPH11243076A (ja) * 1998-02-26 1999-09-07 Canon Inc 陽極化成方法及び陽極化成装置並びに半導体基板の製造方法

Also Published As

Publication number Publication date
US6726815B1 (en) 2004-04-27
DE50014121D1 (de) 2007-04-12
KR20010112373A (ko) 2001-12-20
DE19914905A1 (de) 2000-10-05
ES2282103T3 (es) 2007-10-16
WO2000060143A1 (de) 2000-10-12
EP1181400A1 (de) 2002-02-27
EP1181400B1 (de) 2007-02-28
JP2002541324A (ja) 2002-12-03
KR100698798B1 (ko) 2007-03-26

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