JP2002541324A5 - - Google Patents
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- Publication number
- JP2002541324A5 JP2002541324A5 JP2000609630A JP2000609630A JP2002541324A5 JP 2002541324 A5 JP2002541324 A5 JP 2002541324A5 JP 2000609630 A JP2000609630 A JP 2000609630A JP 2000609630 A JP2000609630 A JP 2000609630A JP 2002541324 A5 JP2002541324 A5 JP 2002541324A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- chamber
- etching
- electrochemical etching
- cell according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 description 51
- 239000003792 electrolyte Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000007772 electrode material Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910020968 MoSi2 Inorganic materials 0.000 description 1
- -1 Rumaniumu Chemical compound 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19914905A DE19914905A1 (de) | 1999-04-01 | 1999-04-01 | Elektrochemische Ätzanlage und Verfahren zur Ätzung eines Ätzkörpers |
| DE19914905.4 | 1999-04-01 | ||
| PCT/DE2000/000857 WO2000060143A1 (de) | 1999-04-01 | 2000-03-17 | Elektrochemische ätzanlage und verfahren zur ätzung eines ätzkörpers |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002541324A JP2002541324A (ja) | 2002-12-03 |
| JP2002541324A5 true JP2002541324A5 (https=) | 2009-11-19 |
| JP4511741B2 JP4511741B2 (ja) | 2010-07-28 |
Family
ID=7903273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000609630A Expired - Lifetime JP4511741B2 (ja) | 1999-04-01 | 2000-03-17 | 電気化学的エッチング装置及びエッチングボデーのエッチングのための方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6726815B1 (https=) |
| EP (1) | EP1181400B1 (https=) |
| JP (1) | JP4511741B2 (https=) |
| KR (1) | KR100698798B1 (https=) |
| DE (2) | DE19914905A1 (https=) |
| ES (1) | ES2282103T3 (https=) |
| WO (1) | WO2000060143A1 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100451132B1 (ko) * | 2001-11-08 | 2004-10-02 | 홍석인 | 다공성 실리콘을 이용한 효소고정화 전극 제작 방법 |
| US7998335B2 (en) * | 2005-06-13 | 2011-08-16 | Cabot Microelectronics Corporation | Controlled electrochemical polishing method |
| RU2308786C1 (ru) * | 2006-05-26 | 2007-10-20 | Государственное образовательное учреждение высшего профессионального образования "Брянская государственная инженерно-технологическая академия" | Раствор для электрохимического растворения кремния |
| US7935230B2 (en) * | 2006-06-29 | 2011-05-03 | Semitool, Inc. | Electro-chemical processor |
| US7927469B2 (en) * | 2006-08-25 | 2011-04-19 | Semitool, Inc. | Electro-chemical processor |
| US7909967B2 (en) * | 2006-07-13 | 2011-03-22 | Semitool, Inc. | Electro-chemical processor |
| DE102007024199B4 (de) | 2007-05-24 | 2015-06-25 | Robert Bosch Gmbh | Herstellungsverfahren eines mikromechanischen Bauelements mit porösifizierter Membran |
| KR101374932B1 (ko) * | 2007-09-28 | 2014-03-17 | 재단법인서울대학교산학협력재단 | 확산 제한 식각과정에 의한 수평 변환 다공성 실리콘 광학필터의 제조방법 및 그에 의한 필터구조 |
| US8906218B2 (en) | 2010-05-05 | 2014-12-09 | Solexel, Inc. | Apparatus and methods for uniformly forming porous semiconductor on a substrate |
| US9076642B2 (en) | 2009-01-15 | 2015-07-07 | Solexel, Inc. | High-Throughput batch porous silicon manufacturing equipment design and processing methods |
| CN102422370A (zh) * | 2009-05-12 | 2012-04-18 | 日本轻金属株式会社 | 电解电容器用铝电极板的制造方法 |
| JP2011026638A (ja) * | 2009-07-22 | 2011-02-10 | Shin Etsu Handotai Co Ltd | 陽極酸化装置 |
| CN102844883B (zh) | 2010-02-12 | 2016-01-20 | 速力斯公司 | 用于制造光电池和微电子器件的半导体衬底的双面可重复使用的模板 |
| KR101347681B1 (ko) | 2010-09-24 | 2014-01-06 | 솔렉셀, 인크. | 고생산성 배치 다공성 실리콘 제조 장치 디자인 및 가공 방법 |
| WO2013126033A2 (en) * | 2010-11-03 | 2013-08-29 | Solexel, Inc. | Apparatus and methods for uniformly forming porous semiconductor on a substrate |
| JP6009268B2 (ja) * | 2012-08-09 | 2016-10-19 | 芝浦メカトロニクス株式会社 | 洗浄液生成装置、洗浄液生成方法、基板洗浄装置及び基板洗浄方法 |
| RU2537488C2 (ru) * | 2012-08-22 | 2015-01-10 | Закрытое акционерное общество "Инструменты нанотехнологии" | Устройство травления поверхности для металлографического анализа |
| US9217206B2 (en) * | 2013-09-27 | 2015-12-22 | Sunpower Corporation | Enhanced porosification |
| CN112820828B (zh) * | 2019-11-15 | 2023-08-04 | 夏泰鑫半导体(青岛)有限公司 | 半导体装置及其制造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5462929A (en) * | 1977-10-28 | 1979-05-21 | Sumitomo Electric Ind Ltd | Surface treating method for aluminum and aluminum alloy |
| JP3149060B2 (ja) * | 1992-01-23 | 2001-03-26 | キヤノン株式会社 | 陽極化成装置、陽極化成方法及びシリコン基板の製造方法 |
| US5458755A (en) * | 1992-11-09 | 1995-10-17 | Canon Kabushiki Kaisha | Anodization apparatus with supporting device for substrate to be treated |
| JP3416190B2 (ja) * | 1993-03-23 | 2003-06-16 | キヤノン株式会社 | 陽極化成装置及び陽極化成方法 |
| SE9300881L (sv) * | 1993-03-17 | 1994-06-06 | Herman Georg Grimmeiss | Anordning för elektrolytisk oxidation av kiselskivor |
| DE69724269T2 (de) * | 1996-09-06 | 2004-06-09 | Obducat Ab | Verfahren für das anisotrope ätzen von strukturen in leitende materialien |
| JPH11243076A (ja) * | 1998-02-26 | 1999-09-07 | Canon Inc | 陽極化成方法及び陽極化成装置並びに半導体基板の製造方法 |
-
1999
- 1999-04-01 DE DE19914905A patent/DE19914905A1/de not_active Ceased
-
2000
- 2000-03-17 US US09/937,926 patent/US6726815B1/en not_active Expired - Lifetime
- 2000-03-17 JP JP2000609630A patent/JP4511741B2/ja not_active Expired - Lifetime
- 2000-03-17 EP EP00922440A patent/EP1181400B1/de not_active Expired - Lifetime
- 2000-03-17 KR KR1020017012317A patent/KR100698798B1/ko not_active Expired - Lifetime
- 2000-03-17 WO PCT/DE2000/000857 patent/WO2000060143A1/de not_active Ceased
- 2000-03-17 ES ES00922440T patent/ES2282103T3/es not_active Expired - Lifetime
- 2000-03-17 DE DE50014121T patent/DE50014121D1/de not_active Expired - Lifetime
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