ES2148963T3 - Dispositivo de memoria de semiconductores. - Google Patents

Dispositivo de memoria de semiconductores.

Info

Publication number
ES2148963T3
ES2148963T3 ES97918054T ES97918054T ES2148963T3 ES 2148963 T3 ES2148963 T3 ES 2148963T3 ES 97918054 T ES97918054 T ES 97918054T ES 97918054 T ES97918054 T ES 97918054T ES 2148963 T3 ES2148963 T3 ES 2148963T3
Authority
ES
Spain
Prior art keywords
enable
bit
pct
drive circuit
storage cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES97918054T
Other languages
English (en)
Inventor
Thomas Zettler
Wolfgang Pockrandt
Josef Winnerl
Georg Georgakos
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of ES2148963T3 publication Critical patent/ES2148963T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/20—Address safety or protection circuits, i.e. arrangements for preventing unauthorized or accidental access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Storage Device Security (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Photovoltaic Devices (AREA)

Abstract

LA INVENCION SE REFIERE A UN DISPOSITIVO DE MEMORIA DE SEMICONDUCTORES, CON VARIAS CELULAS DE MEMORIA (3), SITUADAS EN LOS PUNTOS DE CRUCE DE LINEAS DE BITS Y LINEAS DE PALABRAS DE UN SUSTRATO SEMICONDUCTOR, CONTROLABLES PARA LA PROGRAMACION CON CONTENIDOS DE DATOS VIA CIRCUITO DE CONTROL DE LINEAS DE PALABRAS (4) Y CIRCUITO DE CONTROL DE LINEAS DE BITS (5). LAS CELULAS DE MEMORIA (3) DE UNA LINEA DE PALABRAS TIENEN ASIGNADAS CELULAS DE MEMORIA DE ACTIVACION (12, 14), SITUADAS A LO LARGO DE UNA LINEAS DE BITS DE ACTIVACION (9, 10, 13) Y CONTROLABLES VIA UN CIRCUITO DE CONTROL DE LINEAS DE BITS DE ACTIVACION (11), SEPARADO Y CONTROLABLE DE FORMA INDEPENDIENTE DEL CIRCUITO DE CONTROL DE LINEAS DE BITS (5). LAS CELULAS DE MEMORIA DE ACTIVACION PUEDEN ESTIMULARSE MEDAINTE UN VALOR DE ACTIVACION PARA ACTIVAR LAS CELULAS DE MEMORIA (3) DE UNA LINEA DE PALABRAS DEFINIDA.
ES97918054T 1996-03-28 1997-03-24 Dispositivo de memoria de semiconductores. Expired - Lifetime ES2148963T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19612439A DE19612439C2 (de) 1996-03-28 1996-03-28 Halbleiterspeichervorrichtung

Publications (1)

Publication Number Publication Date
ES2148963T3 true ES2148963T3 (es) 2000-10-16

Family

ID=7789782

Family Applications (1)

Application Number Title Priority Date Filing Date
ES97918054T Expired - Lifetime ES2148963T3 (es) 1996-03-28 1997-03-24 Dispositivo de memoria de semiconductores.

Country Status (11)

Country Link
US (1) US6034902A (es)
EP (1) EP0890172B1 (es)
JP (1) JPH11507164A (es)
KR (1) KR20000005052A (es)
CN (1) CN1214793A (es)
AT (1) ATE193783T1 (es)
BR (1) BR9708365A (es)
DE (2) DE19612439C2 (es)
ES (1) ES2148963T3 (es)
RU (1) RU2169951C2 (es)
WO (1) WO1997037352A1 (es)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3209733B2 (ja) * 1999-09-17 2001-09-17 富士通株式会社 不揮発性半導体記憶装置
US7089360B1 (en) * 2000-03-22 2006-08-08 Intel Corporation Shared cache wordline decoder for redundant and regular addresses
US6665201B1 (en) * 2002-07-24 2003-12-16 Hewlett-Packard Development Company, L.P. Direct connect solid-state storage device
US9959544B2 (en) * 2003-05-22 2018-05-01 International Business Machines Corporation Updating an application on a smart card and displaying an advertisement
US8402448B2 (en) * 2008-09-18 2013-03-19 Infineon Technologies Ag Compiler system and a method of compiling a source code into an encrypted machine language code

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3318123A1 (de) * 1983-05-18 1984-11-22 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung mit einem datenspeicher und einer ansteuereinheit zum auslesen, schreiben und loeschen des speichers
DE3321725A1 (de) * 1983-06-16 1984-12-20 Telefunken electronic GmbH, 7100 Heilbronn Tuner fuer wenigstens zwei frequenzbereiche
US4744062A (en) * 1985-04-23 1988-05-10 Hitachi, Ltd. Semiconductor integrated circuit with nonvolatile memory
US5155829A (en) * 1986-01-21 1992-10-13 Harry M. Weiss Memory system and method for protecting the contents of a ROM type memory
DE4115152C2 (de) * 1991-05-08 2003-04-24 Gao Ges Automation Org Kartenförmiger Datenträger mit einer datenschützenden Mikroprozessorschaltung
FR2683357A1 (fr) * 1991-10-30 1993-05-07 Philips Composants Microcircuit pour carte a puce a memoire programmable protegee.
KR940005696B1 (ko) * 1991-11-25 1994-06-22 현대전자산업 주식회사 보안성 있는 롬(rom)소자
JP3786508B2 (ja) * 1996-11-05 2006-06-14 三星電子株式会社 不揮発性半導体メモリ装置
US5875131A (en) * 1997-12-10 1999-02-23 Winbond Electronics Corp. Presettable static ram with read/write controller

Also Published As

Publication number Publication date
EP0890172B1 (de) 2000-06-07
DE59701848D1 (de) 2000-07-13
WO1997037352A1 (de) 1997-10-09
DE19612439C2 (de) 2001-02-01
ATE193783T1 (de) 2000-06-15
DE19612439A1 (de) 1997-10-02
EP0890172A1 (de) 1999-01-13
CN1214793A (zh) 1999-04-21
BR9708365A (pt) 1999-08-03
RU2169951C2 (ru) 2001-06-27
KR20000005052A (ko) 2000-01-25
US6034902A (en) 2000-03-07
JPH11507164A (ja) 1999-06-22

Similar Documents

Publication Publication Date Title
TW330265B (en) Semiconductor apparatus
EP0725402A3 (en) Semiconductor memory device
EP0923135B1 (en) Ferroelectric memory device
TW329519B (en) The non-volatile semiconductor memory device
KR930022372A (ko) 반도체 기억장치
EP0892408A3 (en) Ferroelectric memory device
TW337018B (en) Semiconductor nonvolatile memory device
TW338155B (en) Ferroelectric memory device and nondestructive accessing method thereof
EP0554901A3 (en) A semiconductor memory device
EP0679996A3 (en) Semiconductor memory device and its driving method
CA2044441A1 (en) Semiconductor storage system
KR950020748A (ko) 반도체 기억장치
ITMI922473A1 (it) Circuito di ridondanza di riga per un dispositivo di memoria a semiconduttore.
TW333704B (en) The semiconductor memory device
KR870009396A (ko) 불휘발성 반도체 기억장치
KR950006875A (ko) 2개의 셀을 동시에 액세스할 수 있는 가상 접지형 불휘발성 반도체 메모리 장치
KR950020749A (ko) 반도체 불휘발성 기억장치
DE69716844D1 (de) Datenschreibverfahren in einer ferroelektrischen Speicherzelle vom Ein-Transistor-Typ
EP0709852A3 (en) Static type of semiconductor memory device having great low voltage operation margin
ES2148963T3 (es) Dispositivo de memoria de semiconductores.
KR870002589A (ko) 센스증폭기와 프로그래밍회로 각각에 독립으로 칼럼 트랜스퍼 게이트 트랜지스터 그롤을 갖게한 반도체 기억장치
EP0869509A3 (en) Nonvolatile semiconductor storage
KR960042732A (ko) 반도체 메모리 셀
KR970051327A (ko) 데이타 기억 영역의 속성 데이타를 기억하는 속성 데이타 영역과 데이타 기억 영역을 갖는 비휘발성메모리
TW238387B (en) Decoding circuit for semiconductor memory device and its process

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 890172

Country of ref document: ES