ES2067665T3 - Metodo para recubrir con fines protectivos semiconductores. - Google Patents

Metodo para recubrir con fines protectivos semiconductores.

Info

Publication number
ES2067665T3
ES2067665T3 ES90302293T ES90302293T ES2067665T3 ES 2067665 T3 ES2067665 T3 ES 2067665T3 ES 90302293 T ES90302293 T ES 90302293T ES 90302293 T ES90302293 T ES 90302293T ES 2067665 T3 ES2067665 T3 ES 2067665T3
Authority
ES
Spain
Prior art keywords
cover
precursor
protective purposes
semiconductive protective
coatings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES90302293T
Other languages
English (en)
Inventor
Ronald Howard Baney
Debora Frances Bergstrom
Leslie Earl Carpenter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Application granted granted Critical
Publication of ES2067665T3 publication Critical patent/ES2067665T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
    • C04B41/5035Silica
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81Coating or impregnation
    • C04B41/85Coating or impregnation with inorganic materials
    • C04B41/87Ceramics
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661Processes performed after copper oxide formation, e.g. patterning
    • H10N60/0716Passivating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Silicon Polymers (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Paints Or Removers (AREA)

Abstract

EL INVENTO SE REFIERE A RECUBRIMIENTOS PROTECTORES PARA SUPERCONDUCTORES DE OXIDO DE COBRE. LOS RECUBRIMIENTO SE FORMAN APLICANDO SOLUCIONES DE PRECURSORES DE SILICE AL SUPERCONDUCTOR Y DESPUES DE LA EVAPORACION DEL DISOLVENTE, CALDEANDO EN UNA ATMOSFERA QUE CONTIENE OXIGENO PARA EFECTUAR LA TRANSFORMACION DEL PRECURSOR EN UN RECUBRIMIENTO DE SILICE CONTINUO. SE DESCRIBEN MATERIALES PRECURSORES TALES SILSESQUIOXIDO DE HIDROGENO, ETIL POLISILICATO Y RESINA-C.
ES90302293T 1989-03-09 1990-03-05 Metodo para recubrir con fines protectivos semiconductores. Expired - Lifetime ES2067665T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US32098689A 1989-03-09 1989-03-09

Publications (1)

Publication Number Publication Date
ES2067665T3 true ES2067665T3 (es) 1995-04-01

Family

ID=23248677

Family Applications (1)

Application Number Title Priority Date Filing Date
ES90302293T Expired - Lifetime ES2067665T3 (es) 1989-03-09 1990-03-05 Metodo para recubrir con fines protectivos semiconductores.

Country Status (7)

Country Link
EP (1) EP0386969B1 (es)
JP (1) JPH02281511A (es)
KR (1) KR940006777B1 (es)
BR (1) BR9001110A (es)
CA (1) CA2010335A1 (es)
DE (1) DE69014687T2 (es)
ES (1) ES2067665T3 (es)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5059448A (en) * 1990-06-18 1991-10-22 Dow Corning Corporation Rapid thermal process for obtaining silica coatings
JP3174416B2 (ja) * 1992-12-10 2001-06-11 ダウ・コ−ニング・コ−ポレ−ション 酸化ケイ素膜の形成方法
JP3174417B2 (ja) * 1992-12-11 2001-06-11 ダウ・コ−ニング・コ−ポレ−ション 酸化ケイ素膜の形成方法
JP3210457B2 (ja) * 1992-12-14 2001-09-17 ダウ・コ−ニング・コ−ポレ−ション 酸化ケイ素膜の形成方法
US5387480A (en) * 1993-03-08 1995-02-07 Dow Corning Corporation High dielectric constant coatings
JP5149512B2 (ja) 2007-02-02 2013-02-20 東レ・ダウコーニング株式会社 液状硬化性組成物、コーテイング方法、無機質基板および半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0725614B2 (ja) * 1987-04-14 1995-03-22 住友電気工業株式会社 セラミツクス系超電導部材
DE3889160T2 (de) * 1987-07-27 1994-11-03 Sumitomo Electric Industries Supraleitender Dünnfilm und Verfahren, um diesen zu präparieren.
JPH01208380A (ja) * 1988-02-16 1989-08-22 Ube Ind Ltd 高温超電導セラミックスの被覆方法
DE3816029A1 (de) * 1988-05-10 1989-11-16 Max Planck Gesellschaft Verfahren zum erhoehen der bestaendigkeit von hoch-t(pfeil abwaerts)c(pfeil abwaerts)-supraleitern gegen umgebungseinfluesse

Also Published As

Publication number Publication date
DE69014687D1 (de) 1995-01-19
JPH02281511A (ja) 1990-11-19
EP0386969A3 (en) 1991-01-09
EP0386969B1 (en) 1994-12-07
DE69014687T2 (de) 1995-07-13
CA2010335A1 (en) 1990-09-09
EP0386969A2 (en) 1990-09-12
KR940006777B1 (ko) 1994-07-27
KR900015363A (ko) 1990-10-26
BR9001110A (pt) 1991-03-05

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