JPS6414979A - Optical sensor - Google Patents

Optical sensor

Info

Publication number
JPS6414979A
JPS6414979A JP62169854A JP16985487A JPS6414979A JP S6414979 A JPS6414979 A JP S6414979A JP 62169854 A JP62169854 A JP 62169854A JP 16985487 A JP16985487 A JP 16985487A JP S6414979 A JPS6414979 A JP S6414979A
Authority
JP
Japan
Prior art keywords
layer
super lattice
phonons
substrate
applicable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62169854A
Other languages
Japanese (ja)
Other versions
JP2547413B2 (en
Inventor
Masahiko Kurakado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP62169854A priority Critical patent/JP2547413B2/en
Publication of JPS6414979A publication Critical patent/JPS6414979A/en
Application granted granted Critical
Publication of JP2547413B2 publication Critical patent/JP2547413B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices

Abstract

PURPOSE:To restrain phonons with energy exceeding two times of the gap energy of a superconductor from running in and out of a substrate by a method wherein a superlattice layer reflecting phonons is provided between a superconductive tunnel junction and the substrate or inside of either element. CONSTITUTION:A super lattice layer 3 is provided on a substrate 2 and then a superconductive tunnel junction layer 4 is provided on the super lattice layer 3. The layer thickness of the first and the second conductors 4, 5 is preferably 1000-5000Angstrom while the layer thickness of a tunnel barrier layer 7 is preferably 20-30Angstrom . The applicable materials to form the conductor layers 5, 6 are a superconductive material, a constant conductive material and a semiconductor material such as aluminum, etc. The film thickness of super lattice layer 3 as a thin layer to reflect phonons is preferably 0.2-0.5mum. This super lattice layer 3 is a multiple layer comprising thin films of multiple kinds of metals or insulators or semiconductor materials. The applicable metallic materials are copper, aluminum, etc., while the applicable semiconductor materials are silicon, PAlGaAs, etc.
JP62169854A 1987-07-09 1987-07-09 Optical sensor Expired - Lifetime JP2547413B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62169854A JP2547413B2 (en) 1987-07-09 1987-07-09 Optical sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62169854A JP2547413B2 (en) 1987-07-09 1987-07-09 Optical sensor

Publications (2)

Publication Number Publication Date
JPS6414979A true JPS6414979A (en) 1989-01-19
JP2547413B2 JP2547413B2 (en) 1996-10-23

Family

ID=15894170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62169854A Expired - Lifetime JP2547413B2 (en) 1987-07-09 1987-07-09 Optical sensor

Country Status (1)

Country Link
JP (1) JP2547413B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4970395A (en) * 1988-12-23 1990-11-13 Honeywell Inc. Wavelength tunable infrared detector based upon super-schottky or superconductor-insulator-superconductor structures employing high transition temperature superconductors
CN111432768A (en) * 2017-12-28 2020-07-17 花王株式会社 Absorbent article

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PHYSICAL REVIEW LETTERS *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4970395A (en) * 1988-12-23 1990-11-13 Honeywell Inc. Wavelength tunable infrared detector based upon super-schottky or superconductor-insulator-superconductor structures employing high transition temperature superconductors
CN111432768A (en) * 2017-12-28 2020-07-17 花王株式会社 Absorbent article

Also Published As

Publication number Publication date
JP2547413B2 (en) 1996-10-23

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