ES2026924T3 - Procedimiento de memorizacion de un bit de informacion de una celda de memoria viva estatica del tipo mos y su correspondiente memoria. - Google Patents

Procedimiento de memorizacion de un bit de informacion de una celda de memoria viva estatica del tipo mos y su correspondiente memoria.

Info

Publication number
ES2026924T3
ES2026924T3 ES198787401534T ES87401534T ES2026924T3 ES 2026924 T3 ES2026924 T3 ES 2026924T3 ES 198787401534 T ES198787401534 T ES 198787401534T ES 87401534 T ES87401534 T ES 87401534T ES 2026924 T3 ES2026924 T3 ES 2026924T3
Authority
ES
Spain
Prior art keywords
procedure
memorization
memory cell
information bit
mos type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES198787401534T
Other languages
English (en)
Inventor
Alain Boudou
Brian Doyle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bull SA
Original Assignee
Bull SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bull SA filed Critical Bull SA
Application granted granted Critical
Publication of ES2026924T3 publication Critical patent/ES2026924T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PROCEDIMIENTO DE MEMORIZACION DE UN BIT DE INFORMACION EN UNA CELULA DE MEMORIA ACTIVA INTEGRADA DE TIPO MOS, TRANSISTOR PARA LA EJECUCION DE TAL PROCEDIMIENTO Y MEMORIA RESULTANTE. UN TRANSISTOR MOS QUE PRESENTA UN FENOMENO DE ISTERESIS EN REGIMEN DE CONDUCCION BAJO LA SEÑAL. ESTE TRANSISTOR ES VENTAJOSAMENTE UTILIZADO COMO ELEMENTO DE MEMORIA EN UNA CELULA DE MEMORIA ACTIVA ESTATICA INTEGRADA.
ES198787401534T 1986-07-30 1987-07-01 Procedimiento de memorizacion de un bit de informacion de una celda de memoria viva estatica del tipo mos y su correspondiente memoria. Expired - Lifetime ES2026924T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8611029A FR2602367B1 (fr) 1986-07-30 1986-07-30 Procede de memorisation d'un bit d'information dans une cellule de memoire vive statique integree du type mos, transistor pour la mise en oeuvre du procede et memoire en resultant

Publications (1)

Publication Number Publication Date
ES2026924T3 true ES2026924T3 (es) 1992-05-16

Family

ID=9337874

Family Applications (1)

Application Number Title Priority Date Filing Date
ES198787401534T Expired - Lifetime ES2026924T3 (es) 1986-07-30 1987-07-01 Procedimiento de memorizacion de un bit de informacion de una celda de memoria viva estatica del tipo mos y su correspondiente memoria.

Country Status (6)

Country Link
US (1) US4843442A (es)
EP (1) EP0258075B1 (es)
JP (1) JPS6342094A (es)
DE (1) DE3773304D1 (es)
ES (1) ES2026924T3 (es)
FR (1) FR2602367B1 (es)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03110253U (es) * 1990-02-28 1991-11-12
US5863823A (en) * 1993-07-12 1999-01-26 Peregrine Semiconductor Corporation Self-aligned edge control in silicon on insulator
US5930638A (en) * 1993-07-12 1999-07-27 Peregrine Semiconductor Corp. Method of making a low parasitic resistor on ultrathin silicon on insulator
US5864162A (en) * 1993-07-12 1999-01-26 Peregrine Seimconductor Corporation Apparatus and method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire
EP2075798A1 (en) * 2007-12-25 2009-07-01 TPO Displays Corp. Storage data unit using hot carrier stressing

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3733591A (en) * 1970-06-24 1973-05-15 Westinghouse Electric Corp Non-volatile memory element
US3974486A (en) * 1975-04-07 1976-08-10 International Business Machines Corporation Multiplication mode bistable field effect transistor and memory utilizing same
US4142111A (en) * 1977-01-27 1979-02-27 Texas Instruments Incorporated One-transistor fully static semiconductor memory cell

Also Published As

Publication number Publication date
EP0258075A1 (fr) 1988-03-02
FR2602367A1 (fr) 1988-02-05
EP0258075B1 (fr) 1991-09-25
DE3773304D1 (de) 1991-10-31
JPS6342094A (ja) 1988-02-23
US4843442A (en) 1989-06-27
FR2602367B1 (fr) 1988-10-07

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