ES2010233A6 - Revestimientos ceramicos, metodo para su produccion y dispositivos electronicos asi revestidos. . - Google Patents

Revestimientos ceramicos, metodo para su produccion y dispositivos electronicos asi revestidos. .

Info

Publication number
ES2010233A6
ES2010233A6 ES8703427A ES8703427A ES2010233A6 ES 2010233 A6 ES2010233 A6 ES 2010233A6 ES 8703427 A ES8703427 A ES 8703427A ES 8703427 A ES8703427 A ES 8703427A ES 2010233 A6 ES2010233 A6 ES 2010233A6
Authority
ES
Spain
Prior art keywords
electronic devices
ceramic coatings
protection
metal oxides
multilayer ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES8703427A
Other languages
English (en)
Inventor
Loren Andrew Haluska
Keith Winton Michael
Leo Tarhay
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of ES2010233A6 publication Critical patent/ES2010233A6/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemically Coating (AREA)
  • Paints Or Removers (AREA)

Abstract

REVESTIMIENTOS CERAMICOS, METODO PARA SU PRODUCCION Y DISPOSITIVOS ELECTRONICOS ASI REVESTIDOS. ESTA INVENCION SE REFIERE A MATERIALES PRODUCIDOS DILUYENDO EN UN DISOLVENTE UNA MEZCLA PRECERAMICA DE UNA RESINA DE HIDROGENO SILSESQUIOXANO Y UN PRECURSOR DE OXIDO METALICO SELECCIONADO DEL GRUPO FORMADO POR UN ALCOXIDO DE ALUMINIO, UN ALCOXIDO DE TITANIO Y UN ALCOXIDO DE ZIRCONIO. LA SOLUCION DE LA MEZCLA PRECERAMICA EN EL DISOLVENTE SE APLICA A UN SUSTRATO Y SE CERAMIFICA APLICANDO CALOR. SOBRE EL REVESTIMIENTO DE SIO2/OXIDO METALICO CERAMIFICADO, SE PUEDEN APLICAR UNO O MAS REVESTIMIENTOS CERAMICOS QUE CONTIENEN SILICIO Y CARBONO, SILICIO Y NITROGENO, O SILICIO, CARBONO Y NITROGENO. PARA CONSEGUIR UNA MEJOR PROTECCION, SE PUEDE APLICAR UN ULTIMO REVESTIMIENTO MEDIANTE CVD O PECVD. LA INVENCION ES PARTICULARMENTE UTIL PARA REVESTIR DISPOSITIVOS ELECTRONICOS.
ES8703427A 1986-12-04 1987-11-30 Revestimientos ceramicos, metodo para su produccion y dispositivos electronicos asi revestidos. . Expired ES2010233A6 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/938,677 US4753855A (en) 1986-12-04 1986-12-04 Multilayer ceramic coatings from metal oxides for protection of electronic devices

Publications (1)

Publication Number Publication Date
ES2010233A6 true ES2010233A6 (es) 1989-11-01

Family

ID=25471786

Family Applications (1)

Application Number Title Priority Date Filing Date
ES8703427A Expired ES2010233A6 (es) 1986-12-04 1987-11-30 Revestimientos ceramicos, metodo para su produccion y dispositivos electronicos asi revestidos. .

Country Status (7)

Country Link
US (1) US4753855A (es)
EP (1) EP0270263B1 (es)
JP (1) JPH0646631B2 (es)
KR (1) KR950014274B1 (es)
CA (1) CA1329736C (es)
DE (1) DE3789605T2 (es)
ES (1) ES2010233A6 (es)

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US5147822A (en) * 1988-08-26 1992-09-15 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method for improving a package of a semiconductor device
US6756670B1 (en) 1988-08-26 2004-06-29 Semiconductor Energy Laboratory Co., Ltd. Electronic device and its manufacturing method
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JP2777903B2 (ja) * 1989-04-14 1998-07-23 日本カーボン株式会社 耐熱耐食性無機材料およびその製造方法
US5085893A (en) * 1989-07-28 1992-02-04 Dow Corning Corporation Process for forming a coating on a substrate using a silsesquioxane resin
US4999397A (en) * 1989-07-28 1991-03-12 Dow Corning Corporation Metastable silane hydrolyzates and process for their preparation
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US5183684A (en) * 1989-11-20 1993-02-02 Dow Corning Corporation Single and multilayer coatings containing aluminum nitride
US4973526A (en) * 1990-02-15 1990-11-27 Dow Corning Corporation Method of forming ceramic coatings and resulting articles
US5059448A (en) * 1990-06-18 1991-10-22 Dow Corning Corporation Rapid thermal process for obtaining silica coatings
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US5339211A (en) * 1991-05-02 1994-08-16 Dow Corning Corporation Variable capacitor
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US5387480A (en) * 1993-03-08 1995-02-07 Dow Corning Corporation High dielectric constant coatings
US5304398A (en) * 1993-06-03 1994-04-19 Watkins Johnson Company Chemical vapor deposition of silicon dioxide using hexamethyldisilazane
US5661092A (en) * 1995-09-01 1997-08-26 The University Of Connecticut Ultra thin silicon oxide and metal oxide films and a method for the preparation thereof
US5807611A (en) * 1996-10-04 1998-09-15 Dow Corning Corporation Electronic coatings
US5711987A (en) * 1996-10-04 1998-01-27 Dow Corning Corporation Electronic coatings
US5707681A (en) * 1997-02-07 1998-01-13 Dow Corning Corporation Method of producing coatings on electronic substrates
US6015457A (en) * 1997-04-21 2000-01-18 Alliedsignal Inc. Stable inorganic polymers
US6743856B1 (en) 1997-04-21 2004-06-01 Honeywell International Inc. Synthesis of siloxane resins
US6218497B1 (en) 1997-04-21 2001-04-17 Alliedsignal Inc. Organohydridosiloxane resins with low organic content
US6143855A (en) * 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content
US6177199B1 (en) 1999-01-07 2001-01-23 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with low organic content
US6218020B1 (en) 1999-01-07 2001-04-17 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with high organic content
WO2000077575A1 (en) * 1999-06-10 2000-12-21 Alliedsignal Inc. Spin-on-glass anti-reflective coatings for photolithography
US6440550B1 (en) 1999-10-18 2002-08-27 Honeywell International Inc. Deposition of fluorosilsesquioxane films
US6472076B1 (en) 1999-10-18 2002-10-29 Honeywell International Inc. Deposition of organosilsesquioxane films
US6368400B1 (en) * 2000-07-17 2002-04-09 Honeywell International Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
RU2006125722A (ru) * 2003-12-18 2008-01-27 Хайбрид Плэстикс, Инк. (Us) Полиэдрические олигомерные силсесквиоксаны и металлизированные полиэдрические олигомерные силсесквиоксаны в качестве покрытий, композитов и добавок
US7380412B2 (en) 2004-07-21 2008-06-03 Donna Roth Food storage system
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US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
WO2008122292A1 (en) * 2007-04-04 2008-10-16 Ecole Polytechnique Federale De Lausanne (Epfl) Diffusion-barrier coating for protection of moisture and oxygen sensitive devices
US9953952B2 (en) * 2008-08-20 2018-04-24 Infineon Technologies Ag Semiconductor device having a sealant layer including carbon directly contact the chip and the carrier
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8840970B2 (en) * 2011-01-16 2014-09-23 Sigma Laboratories Of Arizona, Llc Self-assembled functional layers in multilayer structures
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WO2016167892A1 (en) 2015-04-13 2016-10-20 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
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Also Published As

Publication number Publication date
KR950014274B1 (ko) 1995-11-24
DE3789605T2 (de) 1994-11-03
EP0270263A2 (en) 1988-06-08
US4753855A (en) 1988-06-28
JPS63152131A (ja) 1988-06-24
JPH0646631B2 (ja) 1994-06-15
CA1329736C (en) 1994-05-24
EP0270263B1 (en) 1994-04-13
KR880008443A (ko) 1988-08-31
DE3789605D1 (de) 1994-05-19
EP0270263A3 (en) 1989-12-13

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Legal Events

Date Code Title Description
SA6 Expiration date (snapshot 920101)

Free format text: 2007-11-30