EP3818559A1 - Procédé de fabrication de pistes conductrices et module électronique - Google Patents

Procédé de fabrication de pistes conductrices et module électronique

Info

Publication number
EP3818559A1
EP3818559A1 EP19769053.0A EP19769053A EP3818559A1 EP 3818559 A1 EP3818559 A1 EP 3818559A1 EP 19769053 A EP19769053 A EP 19769053A EP 3818559 A1 EP3818559 A1 EP 3818559A1
Authority
EP
European Patent Office
Prior art keywords
thermoplastic
particles
conductor track
surface formed
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19769053.0A
Other languages
German (de)
English (en)
Inventor
Caroline Cassignol
Alexander HENSEL
Dulijano PECANAC
Oliver Raab
Stefan Stegmeier
Erik WEISBROD
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP3818559A1 publication Critical patent/EP3818559A1/fr
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/02Pretreatment of the material to be coated, e.g. for coating on selected surface areas
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/06Metallic material
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    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
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    • C23C4/08Metallic material containing only metal elements
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    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/123Spraying molten metal
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    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/126Detonation spraying
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    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C4/129Flame spraying
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    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C4/12Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/131Wire arc spraying
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    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C4/12Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134Plasma spraying
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
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    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/145Organic substrates, e.g. plastic
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    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
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    • H01L24/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
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    • H01L2224/241Disposition
    • H01L2224/24151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/821Forming a build-up interconnect
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    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
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    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
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Definitions

  • the invention relates to a method for manufacturing Lei tracks and an electronics module.
  • microsystem technology and electronics such as power electronics, passive components, semiconductor components and substrates, such as printed circuit boards, are interconnected by means of a construction and connection technology
  • wire-bond technology also called ribbon-bond technology.
  • wire-bond technology compressive forces have to be exerted which can damage electrical components such as, in particular, semiconductor components.
  • wire bonding technology local temperature increases occur during operation due to the small cross-section when bonding wires used, which must be taken into account when electronic modules are being displayed.
  • electrical inductances occur which can lead to electrical interference.
  • the conductor track guidance in wire bond technology is severely restricted.
  • planar assembly and connection technology can also be used.
  • planar conductor tracks is often difficult to implement or can only be implemented in very special applications.
  • the sintering of conductor tracks requires high pressures, while the known silver sintering of conductor tracks causes high process costs.
  • Planar assembly and connection technologies which are based on phototechnology and electroplating, mean, however, highly complex manufacturing processes.
  • At least one surface formed with thermoplastic is used and conductor material is deposited on the surface formed with thermoplastic by means of thermal spraying.
  • conductor track material is consequently deposited in such a way that that particles formed with conductor material are applied by means of thermal spraying, that is to say particles with a hot surface temperature, to the surface formed with thermoplastic.
  • the particles Due to the high surface temperature of the particles and / or due to the kinetic energy of the particles, the particles give off kinetic and thermal energy to the thermoplastic, which deforms as a result, and is advantageously even melted, so that the particles, which initially on the surface sprayed on who can fully or partially penetrate the thermoplastic and can advantageously be enclosed by thermoplastic.
  • thermoplastic With continued thermal spraying, the surface formed with thermoplastic converts into a border region in which thermoplastic is almost completely distant from the surface and within the border region the proportion of thermoplastic decreases in favor of an increasing proportion of the conductor material. Towards the surface of this border region, however, there is such a high density of particles formed with conductor material that conductor material deposited further on this surface of the border region easily adheres.
  • the amount of energy of the particles during thermal spraying is sufficiently small and conversely the melting enthalpy of the surface formed with thermoplastic is sufficiently high that overheating of the surface formed with thermoplastic and thus with thermal decomposition of thermoplastic material of the surface formed with thermoplastic not happened.
  • the energy of the particles is expediently sufficiently high that the particles deform when they hit already separated particles of interconnect material and connect them to the already separated particles in a substance-liquid manner.
  • the conductor track material is interlocked with the surface formed with thermoplastic in a positive and non-positive manner, so that production of the conductor track on the can be made particularly delamination-proof with a thermoplastic-formed surface and consequently no air gaps can occur between the thermoplastic-formed surface and the conductor track. Consequently, one or more conductor tracks with a high partial discharge resistance can or can be produced on the surface formed with thermoplastic by means of the method according to the invention.
  • the conductor material separated during thermal spraying adheres slightly to the surface formed with thermoplastic, but not to thermoset, so that the at least one conductor path can be structured in a particularly simple manner.
  • the flat air gap-free connection of the at least one conductor track to the surface formed with thermoplastic is advantageously particularly low-inductance by means of the method according to the invention.
  • the method according to the invention makes it particularly easy to heat them down, since no installation space has to be provided by space-consuming construction and connection technology.
  • the entire contact surface to be contacted components and / or assemblies can advantageously be used for contacting.
  • the method according to the invention permits particularly high integration, since components can be arranged very closely to one another and can be electrically contacted. In particular, there is no bond loop to be observed, such as with wire bonding.
  • thermal spraying expediently forms a generic term for a number of more specific technologies.
  • Thermal spraying can advantageously be used in the context of this invention by means of atomization from a melt, in particular by means of melt bath spraying, and / or by means of electrical arc or gas discharge, preferably by means of arc spraying or plasma spraying, by means of gas expansion without combustion, in particular by means of cold gas spraying, and / or by means of Combustion, in particular by means of wire flame spraying and / or powder flame spraying and / or high-speed flame spraying and / or detonation spraying, and / or using a bundled energetic beam, in particular by means of laser spraying.
  • thermoplastic is expediently or comprises a high-temperature polymer which shows a thermoplastic behavior on its surface, so that thermally sprayed particles can fuse with the thermoplastic.
  • the conductor material preferably has electrically conductive material and / or a material which can be converted into an electrically conductive material by treatment, in particular heating or radiation, preferably UV radiation.
  • a conductor material in the sense of this invention is therefore expedient, although not necessarily an electrically conductive material, but the conductor material can be formed by means of a material which only gains electrical conductivity through further, subsequent treatment.
  • the conductor track material suitably has copper and / or silver and / or gold and / or aluminum and / or nickel and / or tin and / or an alloy with one or more of the aforementioned metals.
  • the surface formed with thermoplastic is drawn on by producing the surface formed with thermoplastic next.
  • the surface formed with thermoplastic is preferably produced by means of coating, in particular special dispensing and / or jet printing and / or screen printing.
  • the surface formed with thermoplastic can be produced by using a circuit board which is to be provided with conductor tracks and the circuit board is at least partially coated with a layer formed with thermoplastic, so that an outer surface of this layer is covered with thermo represents or has a plastically formed surface.
  • the thermoplastic is / are polyamide imide and / or polyimide and / or polyaryl ether and / or BMI and / or poly amide and / or functionalized polyamides and / or polyethene retherketone (PEEK) and / or PES, used.
  • the thermoplastic is used in a mixture with at least one thermoset.
  • polyimide, polyamideimide, polyaryl ether, BMI or functionalized polyamides have aromatic polymer units which have good temperature resistance and good adhesion. They are soluble in selected solvents and their solution is stable at room temperature.
  • polyamideimide, polyimide, BMI, polyamides, polyimides, polyetheretherketone (PEEK) and PES advantageously have a very high glass transition temperature and / or a high melting point.
  • a thermoplastic is a material with a high glass transition temperature of at least 250 degrees Celsius and / or with a high short-term temperature resistance of at least 250 degrees Celsuis and / or with a high modulus of elasticity of at least 500 MPa at 25 ° C.
  • a material with the highest possible flexibility and / or the highest possible impact strength and / or a is suitably used as the thermoplastic the lowest possible ion content.
  • thermoplastic is used as a material with a coefficient of thermal expansion that differs as little as possible in comparison to a preferably available circuit carrier on which the at least one conductor track is produced and / or in comparison to a preferably available component which is preferably with the a conductor track is electrically contacted, and / or with the lowest possible moisture absorption and / or the highest possible dielectric strength
  • thermal spraying is expediently carried out with particles at a temperature of at least 800 degrees Celsius and preferably at least 1083 degrees Celsius. With such a temperature, it is sufficient that the particles hit the surface with a sufficiently hot surface temperature and, for example in the case of copper at more than 1083 degrees Celsius, are subjected to a sufficiently high deformation, so that particularly good surface adhesion of the conductor material he is enough. Due to the high surface adhesion of the conductor material, partial discharges due to air pores between the conductor material and the surface can be effectively avoided.
  • thermal spraying is expediently carried out with particles having an oxide content of at most 10 percent, preferably at most 5 percent, so that a sufficiently high electrical conductivity is achieved.
  • thermal spraying preferably takes place with particles with a porosity of less than 50 percent in order to achieve a sufficiently high electrical conductivity.
  • Thermal spraying is expediently carried out in the method according to the invention with particles at a speed of at most 700 m / s, preferably at most 500 m / s. Such a low speed of the particles ensures that the particles do not destroy surfaces, for example of semiconductor components such as semiconductor chips or of electrical contacts.
  • the particles are copper and / or silver and / or gold and / or aluminum and / or nickel and / or tin
  • the conductor track material is advantageous at least in regions as a layer with a thickness, i.e. Layer thickness of at least 10 microns, preferably at least 20 microns, ideally at least 30 microns, deposited. In this way, the conductor track material is deposited with a sufficiently large layer thickness, which allows efficient power conduction.
  • the at least one conductor track or the conductor tracks are formed on an electronic module, in particular a power module.
  • the electronic module according to the invention is in particular a power module and comprises a surface formed with a thermoplastic, on which a thermally sprayed conductor track is arranged.
  • the electronics module according to the invention is suitably formed by a method according to the invention as described above.
  • the electronic module according to the invention preferably comprises at least one or more electrical and / or electronic construction elements which are electrically conductively connected to the conductor track.
  • the electrical and / or electronic components and preferably existing electrical contacts and / or component connections or component connections have a temperature stability of at least 200 degrees Celsius.
  • the invention can be advantageous
  • Electronics module can be manufactured with a plurality of process variants of thermal spraying, without the components being affected.
  • the surface formed with thermoplastic at least partially forms a layer of at least one component and / or egg nes circuit carrier.
  • Fig. 1 shows an arrangement schematically in cross section
  • Method according to the invention for producing a conductor track in which particles of conductor track material are thermally applied to a surface formed with thermoplastic
  • Fig. 2 likes the surface formed with thermoplastic with the conductor track.
  • Fig. 1 schematically in cross section.
  • a circuit carrier 10 is first used.
  • the circuit carrier 10 comprises, in a manner known per se, a ceramic plate 20 with two flat sides 30, 40 facing away from one another and parallel to one another and extending flatly, each of which has a copper metallization 50, 60, each of which extends along the flat side 30, 40 Copper layer high to form a homogeneous thickness.
  • another circuit carrier can be provided in further exemplary embodiments that are not shown separately.
  • another electrical component is provided instead of a semiconductor component 70.
  • thermoplastic 90 in the present case polyamideimide, is in the manner of a layer with a homogeneous thickness of approximately 35 on a surface of the copper metallization 50 which is not occupied by the semiconductor component 70 and on sides of the semiconductor component 70 which are not adjacent to the copper metallization 50 Microns separated.
  • another thermoplastic for example polyimide or polyaryl ether or BMI or polyamide or functionalized polyamides or polyether ether ketone (PEEK) or PES, can also be used in further exemplary embodiments which are not specifically illustrated.
  • PEEK polyether ether ketone
  • a mixture of the aforementioned plastics can be present with one another or with a duroplastic plastic.
  • the thermoplastic 90 does not necessarily have to exist as a pure individual material or as an exclusively thermoplastic material. In the present case, the thermoplastic 90 serves as a primer for the conductor tracks applied below:
  • a metal layer is sprayed onto the thermoplastic 90 by means of thermal spraying.
  • 100 metal particles 110 here present as nanoparticles copper particles with a radius of, for example, 500 nanometers or less, are sprayed onto the thermoplastic with a spray nozzle. sprayed 90.
  • other spray particles can also be sprayed onto the thermoplastics, for example metal particles made of or with aluminum and / or nickel and / or silver and / or gold and / or tin.
  • the thermal spraying of the metal particles 110 takes place by means of atomization from a melt, that is to say by means of melt bath spraying.
  • the thermal spraying is carried out by means of arc or gas discharge, for example by means of arc spraying or plasma spraying, or by means of gas expansion without combustion, for example by means of cold gas spraying, or by means of combustion, for example by means of wire flame spraying or powder flame spraying or high-speed flame spraying or detonation spraying a bundled energetic beam, for example by means of laser spraying.
  • the metal particles 110 are sprayed onto the thermoplastics 90 with a surface temperature of more than 1083 degrees Celsius. Therefore, the metal particles 110 present as copper particles are subject to a significant deformation upon impact on the thermoplastics 90, so that the metal particles 110 enter into particularly good surface adhesion with the thermoplastics 90.
  • the enthalpy of fusion of the thermoplastic 90 is sufficiently high that the metal particles 110 deform or melt the thermoplastic 90. The metal particles 110 that first hit the thermoplastic 90 consequently penetrate into the thermoplastic 90, the thermoplastic 90 enclosing these metal particles 110 (FIG. 2).
  • a border region 120 (FIG. 2) which contains the thermoplastic 90 and metal particles 110, so that the thermoplastic 90 binds particularly well to the metal particles 110.
  • this border region 120 there are few metal particles 110 near the circuit carrier 10, which are therefore are positively introduced in the thermoplastic 90.
  • the border region 120 contains an increasing density of metal particles 110, so that there is a transition gradient from metal particle-free thermoplastic 90 to a high density of metal particles 110 that have penetrated into the thermoplastic 90.
  • further metal particles 110 are sprayed on the surface of the border region 120 remote from the circuit carrier 10, which now no longer penetrate into the thermoplastics 90, but instead form a metal layer 130 lying on the border layer 120.
  • the metal layer 130 is cohesively connected to the metal particles 110 located on the surface of the border region 120 remote from the circuit carrier 10, so that the metal layer 130 is firmly connected to the thermoplastic 90 by means of the border region 120.
  • the metal layer 130 is sprayed onto the border region 120 with a layer thickness d of at least 20 micrometers.
  • the metal layer 130 is sprayed in the form of a contact 85 of the semiconductor component 70 electrically connecting conductor track which expediently connects this contact 85 of the semiconductor component to an electrical contact 140 of the circuit carrier 20 in an electrically conductive manner.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

L'invention concerne un procédé de fabrication d'au moins une piste conductrice, selon lequel on utilise une surface formée avec un thermoplastique (90) et on dépose sur la surface un matériau de piste conductrice (110) par pulvérisation thermique. Le module électronique est en particulier un module de puissance et comprend une surface formée avec un thermoplastique (90) sur laquelle est disposée une piste conductrice (130) pulvérisée thermiquement.
EP19769053.0A 2018-08-30 2019-08-30 Procédé de fabrication de pistes conductrices et module électronique Pending EP3818559A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018214778.7A DE102018214778A1 (de) 2018-08-30 2018-08-30 Verfahren zur Fertigung von Leiterbahnen und Elektronikmodul
PCT/EP2019/073171 WO2020043863A1 (fr) 2018-08-30 2019-08-30 Procédé de fabrication de pistes conductrices et module électronique

Publications (1)

Publication Number Publication Date
EP3818559A1 true EP3818559A1 (fr) 2021-05-12

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EP (1) EP3818559A1 (fr)
CN (1) CN112602183A (fr)
DE (1) DE102018214778A1 (fr)
WO (1) WO2020043863A1 (fr)

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US20210202434A1 (en) 2021-07-01
DE102018214778A1 (de) 2020-03-05
WO2020043863A1 (fr) 2020-03-05
CN112602183A (zh) 2021-04-02

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