EP3726565A4 - Liquide de traitement pour tranches de semi-conducteur, qui contient des ions hypochlorite - Google Patents

Liquide de traitement pour tranches de semi-conducteur, qui contient des ions hypochlorite Download PDF

Info

Publication number
EP3726565A4
EP3726565A4 EP19741609.2A EP19741609A EP3726565A4 EP 3726565 A4 EP3726565 A4 EP 3726565A4 EP 19741609 A EP19741609 A EP 19741609A EP 3726565 A4 EP3726565 A4 EP 3726565A4
Authority
EP
European Patent Office
Prior art keywords
treatment liquid
semiconductor wafers
hypochlorite ions
contains hypochlorite
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19741609.2A
Other languages
German (de)
English (en)
Other versions
EP3726565A1 (fr
Inventor
Takafumi Shimoda
Takayuki Negishi
Yuki Kikkawa
Seiji Tono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuyama Corp
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of EP3726565A1 publication Critical patent/EP3726565A1/fr
Publication of EP3726565A4 publication Critical patent/EP3726565A4/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/046—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
    • C11D17/0008—Detergent materials or soaps characterised by their shape or physical properties aqueous liquid non soap compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
    • C11D17/08—Liquid soap, e.g. for dispensers; capsuled
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/168—Organometallic compounds or orgometallic complexes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/0209—Cleaning of wafer backside
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
EP19741609.2A 2018-01-16 2019-01-15 Liquide de traitement pour tranches de semi-conducteur, qui contient des ions hypochlorite Pending EP3726565A4 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018005202 2018-01-16
JP2018005201 2018-01-16
JP2018199949 2018-10-24
PCT/JP2019/000938 WO2019142788A1 (fr) 2018-01-16 2019-01-15 Liquide de traitement pour tranches de semi-conducteur, qui contient des ions hypochlorite

Publications (2)

Publication Number Publication Date
EP3726565A1 EP3726565A1 (fr) 2020-10-21
EP3726565A4 true EP3726565A4 (fr) 2021-10-13

Family

ID=67301793

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19741609.2A Pending EP3726565A4 (fr) 2018-01-16 2019-01-15 Liquide de traitement pour tranches de semi-conducteur, qui contient des ions hypochlorite

Country Status (8)

Country Link
US (2) US11390829B2 (fr)
EP (1) EP3726565A4 (fr)
JP (3) JP6798045B2 (fr)
KR (1) KR20200110335A (fr)
CN (1) CN111684570B (fr)
SG (1) SG11202006733TA (fr)
TW (1) TW201932588A (fr)
WO (1) WO2019142788A1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7219061B2 (ja) * 2018-11-14 2023-02-07 関東化学株式会社 ルテニウム除去用組成物
EP4023791B1 (fr) 2019-09-27 2023-10-11 Tokuyama Corporation Liquide de traitement pour semi-conducteur de ruthenium et procede de production de celui-ci
US11932590B2 (en) 2019-09-27 2024-03-19 Tokuyama Corporation Inhibitor for RuO4 gas generation and method for inhibiting RuO4 gas generation
CN115152005A (zh) * 2020-02-25 2022-10-04 株式会社德山 钌的半导体用处理液
WO2021201094A1 (fr) 2020-03-31 2021-10-07 株式会社トクヤマ Liquide de traitement pour semi-conducteurs et son procédé de production
CN116057208A (zh) 2020-08-07 2023-05-02 株式会社德山 半导体晶片用处理液
WO2022050273A1 (fr) * 2020-09-03 2022-03-10 富士フイルム株式会社 Composition et procédé de traitement de substrat
JPWO2022114036A1 (fr) 2020-11-26 2022-06-02
KR20230104741A (ko) 2020-12-18 2023-07-10 가부시끼가이샤 도꾸야마 천이 금속의 반도체의 처리 방법, 및 천이 금속 산화물의 환원제 함유 처리액
JP7342288B2 (ja) 2020-12-18 2023-09-11 株式会社トクヤマ 遷移金属の半導体の処理方法、および遷移金属酸化物の還元剤含有処理液
TW202244325A (zh) 2021-03-31 2022-11-16 日商德山股份有限公司 半導體用處理液
WO2024071417A1 (fr) * 2022-09-29 2024-04-04 株式会社トクヤマ Solution d'élimination de résidus de gravure sèche

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1564595A2 (fr) * 2004-02-11 2005-08-17 Mallinckrodt Baker, Inc. Composition pour le nettoyage de supports microélectroniques contenant des acides halogène-oxygène et leurs dérivés
US20090130849A1 (en) * 2007-10-29 2009-05-21 Wai Mun Lee Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2517187C3 (de) 1975-04-18 1980-11-13 Aeg-Kanis Turbinenfabrik Gmbh, 8500 Nuernberg Hydraulische Turbinendrehvorrichtung
JP3649771B2 (ja) * 1995-05-15 2005-05-18 栗田工業株式会社 洗浄方法
JP3619745B2 (ja) 1999-12-20 2005-02-16 株式会社日立製作所 固体表面の処理方法及び処理液並びにこれらを用いた電子デバイスの製造方法
JP2001231373A (ja) 2000-02-22 2001-08-28 Gumma Prefecture 植物の栽培方法及びその装置
JP4510979B2 (ja) 2000-02-23 2010-07-28 ルネサスエレクトロニクス株式会社 ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法
JP3664967B2 (ja) 2000-10-20 2005-06-29 シャープ株式会社 半導体集積回路
JP3585437B2 (ja) 2000-11-22 2004-11-04 株式会社荏原製作所 ルテニウム膜のエッチング方法
JP2003119494A (ja) 2001-10-05 2003-04-23 Nec Corp 洗浄組成物およびこれを用いた洗浄方法と洗浄装置
JP2005101479A (ja) * 2002-11-08 2005-04-14 Sumitomo Chemical Co Ltd 半導体基板用洗浄液
TW200413522A (en) * 2002-11-08 2004-08-01 Sumitomo Chemical Co Washing liquid for semiconductor substrate
JP4232002B2 (ja) * 2003-01-16 2009-03-04 日本電気株式会社 デバイス基板用の洗浄組成物及び該洗浄組成物を用いた洗浄方法並びに洗浄装置
BRPI0413657A (pt) * 2003-08-19 2006-10-24 Mallinckrodt Baker Inc Composição aquosa, isenta de silicato, para limpeza de substratos microeletrÈnicos, bem como processo para limpeza de um substrato microeletrÈnico sem produzir qualquer corrosão metálica substancial
JP2009081247A (ja) 2007-09-26 2009-04-16 Panasonic Corp ルテニウム膜のエッチング方法
ES2386692T3 (es) * 2007-11-13 2012-08-27 Sachem, Inc. Composición de silsesquioxano poliédrico con potencial zeta negativo elevado y método para la limpieza húmeda de semiconductores sin daños
JP2009231354A (ja) 2008-03-19 2009-10-08 Fujifilm Corp 半導体デバイス用洗浄液、および洗浄方法
US20110147341A1 (en) 2008-09-09 2011-06-23 Showa Denko K.K. Etching solution for titanium-based metal, tungsten-based metal, titanium/tungsten-based metal or their nitrides
US20120256122A1 (en) 2009-12-17 2012-10-11 Showa Denko K. K. Composition for etching of ruthenium-based metal, and process for preparation of the same
US8211800B2 (en) * 2010-08-23 2012-07-03 Kabushiki Kaisha Toshiba Ru cap metal post cleaning method and cleaning chemical
JP2013001620A (ja) * 2011-06-20 2013-01-07 Evatech Corp 弱酸性次亜塩素酸、並びにその製造装置および製造方法
JP2014062297A (ja) 2012-09-20 2014-04-10 Toshiba Corp 処理装置、処理液の製造方法、および電子デバイスの製造方法
SG11201509933QA (en) * 2013-06-06 2016-01-28 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
WO2016042408A2 (fr) * 2014-09-17 2016-03-24 Atmi Taiwan Co., Ltd. Compositions d'attaque chimique de nitrure de titane ayant une compatibilité avec le germaniure de silicium et le tungstène
EP3193358B1 (fr) * 2014-11-13 2021-03-31 Mitsubishi Gas Chemical Company, Inc. Liquide de nettoyage pour élément semi-conducteur inhibant les dommages sur des matériaux contenant du tungstène, et procédé de nettoyage d'élément semi-conducteur mettant en uvre celui-ci
TWI816635B (zh) * 2015-10-15 2023-10-01 日商三菱瓦斯化學股份有限公司 半導體元件之洗淨用液體組成物、半導體元件之洗淨方法及半導體元件之製造方法
WO2020049955A1 (fr) * 2018-09-06 2020-03-12 富士フイルム株式会社 Solution chimique et procédé de traitement de substrat
JP7108042B2 (ja) * 2018-09-12 2022-07-27 富士フイルム株式会社 薬液、基板の処理方法
US11898081B2 (en) * 2019-11-21 2024-02-13 Tokyo Ohka Kogyo Co., Ltd. Ruthenium-etching solution, method for manufacturing ruthenium-etching solution, method for processing object to be processed, and method for manufacturing ruthenium-containing wiring
KR20210063248A (ko) * 2019-11-22 2021-06-01 가부시끼가이샤 도꾸야마 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1564595A2 (fr) * 2004-02-11 2005-08-17 Mallinckrodt Baker, Inc. Composition pour le nettoyage de supports microélectroniques contenant des acides halogène-oxygène et leurs dérivés
US20090130849A1 (en) * 2007-10-29 2009-05-21 Wai Mun Lee Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use

Also Published As

Publication number Publication date
JP2021040151A (ja) 2021-03-11
US20220325205A1 (en) 2022-10-13
JP7311477B2 (ja) 2023-07-19
WO2019142788A1 (fr) 2019-07-25
CN111684570A (zh) 2020-09-18
CN111684570B (zh) 2024-02-27
SG11202006733TA (en) 2020-08-28
JPWO2019142788A1 (ja) 2020-11-19
KR20200110335A (ko) 2020-09-23
TW202210663A (zh) 2022-03-16
TW201932588A (zh) 2019-08-16
JP2023126320A (ja) 2023-09-07
JP6798045B2 (ja) 2020-12-09
US20210062115A1 (en) 2021-03-04
EP3726565A1 (fr) 2020-10-21
US11390829B2 (en) 2022-07-19

Similar Documents

Publication Publication Date Title
EP3726565A4 (fr) Liquide de traitement pour tranches de semi-conducteur, qui contient des ions hypochlorite
EP3698395A4 (fr) Source de plasma sans appariement servant à la fabrication de tranches de semi-conducteurs
EP3476983A4 (fr) Tranche semiconductrice et procédé pour polir une tranche semiconductrice
EP3270409A4 (fr) Substrat semi-conducteur composé
EP3489990A4 (fr) Substrat semi-conducteur
EP3455877A4 (fr) Verres de passivation pour dispositifs semiconducteurs
EP3376525A4 (fr) Procédé de fabrication de substrat semi-conducteur de nitrure de groupe iii et substrat semi-conducteur de nitrure de groupe iii
EP3798207A4 (fr) Solution d'hypochlorite d'alkylammonium quaternaire, procédé de préparation correspondant, et procédé de nettoyage d'une plaquette de semi-conducteur
EP3306653A4 (fr) Procédé d'évaluation de plaquette semi-conductrice
EP3396703A4 (fr) Mécanisme de support de plaquette, appareil de dépôt chimique en phase vapeur et procédé de fabrication de plaquette épitaxiale
EP3442038A4 (fr) Tranche de semi-conducteur
SG10201907085QA (en) Semiconductor substrate processing method
EP3926662A4 (fr) Solution de traitement contenant un sel d'onium pour tranches de semi-conducteur
EP3723114A4 (fr) Substrat semi-conducteur composite
EP3605595A4 (fr) Substrat semi-conducteur composite
EP3363040A4 (fr) Amincissement localisé d'une plaquette de semi-conducteur
EP3823041A4 (fr) Appareil à semiconducteur
EP3550592A4 (fr) Substrat semiconducteur
GB2576108B (en) Semiconductor etching methods
EP3398204A4 (fr) Commande de procédé de séparation de tranche
EP3948939A4 (fr) Dispositif de retournement de semi-conducteur
EP3534707A4 (fr) Compositions d'adjuvant pour produits chimiques de traitement de plantes
EP3817039A4 (fr) Dispositif à semi-conducteur
EP3375914A4 (fr) Procédé de fabrication d'une plaquette de semi-conducteur
EP3279923A4 (fr) Élément au carbure de silicium pour dispositifs de traitement au plasma, et son procédé de fabrication

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20200716

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
RIC1 Information provided on ipc code assigned before grant

Ipc: C11D 7/54 20060101ALI20210803BHEP

Ipc: C11D 17/08 20060101ALI20210803BHEP

Ipc: C11D 7/32 20060101ALI20210803BHEP

Ipc: C11D 7/10 20060101ALI20210803BHEP

Ipc: H01L 21/02 20060101AFI20210803BHEP

A4 Supplementary search report drawn up and despatched

Effective date: 20210910

RIC1 Information provided on ipc code assigned before grant

Ipc: C11D 7/54 20060101ALI20210906BHEP

Ipc: C11D 17/08 20060101ALI20210906BHEP

Ipc: C11D 7/32 20060101ALI20210906BHEP

Ipc: C11D 7/10 20060101ALI20210906BHEP

Ipc: H01L 21/02 20060101AFI20210906BHEP