EP3312637A4 - Strahlungsdetektor - Google Patents

Strahlungsdetektor Download PDF

Info

Publication number
EP3312637A4
EP3312637A4 EP17821455.7A EP17821455A EP3312637A4 EP 3312637 A4 EP3312637 A4 EP 3312637A4 EP 17821455 A EP17821455 A EP 17821455A EP 3312637 A4 EP3312637 A4 EP 3312637A4
Authority
EP
European Patent Office
Prior art keywords
radiation detector
detector
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP17821455.7A
Other languages
English (en)
French (fr)
Other versions
EP3312637A1 (de
EP3312637B1 (de
Inventor
Masanori Kinpara
Toshiyuki ONODERA
Keitaro Hitomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to EP20155808.7A priority Critical patent/EP3675184B1/de
Priority to EP21180810.0A priority patent/EP3907767B1/de
Priority to EP23158768.4A priority patent/EP4213225B1/de
Publication of EP3312637A1 publication Critical patent/EP3312637A1/de
Publication of EP3312637A4 publication Critical patent/EP3312637A4/de
Application granted granted Critical
Publication of EP3312637B1 publication Critical patent/EP3312637B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/249—Measuring radiation intensity with semiconductor detectors specially adapted for use in SPECT or PET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
EP17821455.7A 2016-07-11 2017-06-19 Strahlungsdetektor Active EP3312637B1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP20155808.7A EP3675184B1 (de) 2016-07-11 2017-06-19 Strahlungsdetektor
EP21180810.0A EP3907767B1 (de) 2016-07-11 2017-06-19 Strahlungsdetektor
EP23158768.4A EP4213225B1 (de) 2016-07-11 2017-06-19 Verfahren zur herstellung eines strahlungsdetektors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016136788A JP6242954B1 (ja) 2016-07-11 2016-07-11 放射線検出器
PCT/JP2017/022536 WO2018012209A1 (ja) 2016-07-11 2017-06-19 放射線検出器

Related Child Applications (3)

Application Number Title Priority Date Filing Date
EP23158768.4A Division EP4213225B1 (de) 2016-07-11 2017-06-19 Verfahren zur herstellung eines strahlungsdetektors
EP21180810.0A Division EP3907767B1 (de) 2016-07-11 2017-06-19 Strahlungsdetektor
EP20155808.7A Division EP3675184B1 (de) 2016-07-11 2017-06-19 Strahlungsdetektor

Publications (3)

Publication Number Publication Date
EP3312637A1 EP3312637A1 (de) 2018-04-25
EP3312637A4 true EP3312637A4 (de) 2018-12-05
EP3312637B1 EP3312637B1 (de) 2020-02-26

Family

ID=60570427

Family Applications (4)

Application Number Title Priority Date Filing Date
EP23158768.4A Active EP4213225B1 (de) 2016-07-11 2017-06-19 Verfahren zur herstellung eines strahlungsdetektors
EP17821455.7A Active EP3312637B1 (de) 2016-07-11 2017-06-19 Strahlungsdetektor
EP20155808.7A Active EP3675184B1 (de) 2016-07-11 2017-06-19 Strahlungsdetektor
EP21180810.0A Active EP3907767B1 (de) 2016-07-11 2017-06-19 Strahlungsdetektor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP23158768.4A Active EP4213225B1 (de) 2016-07-11 2017-06-19 Verfahren zur herstellung eines strahlungsdetektors

Family Applications After (2)

Application Number Title Priority Date Filing Date
EP20155808.7A Active EP3675184B1 (de) 2016-07-11 2017-06-19 Strahlungsdetektor
EP21180810.0A Active EP3907767B1 (de) 2016-07-11 2017-06-19 Strahlungsdetektor

Country Status (8)

Country Link
US (4) US10782427B2 (de)
EP (4) EP4213225B1 (de)
JP (1) JP6242954B1 (de)
KR (1) KR101886596B1 (de)
CN (2) CN107850683B (de)
IL (4) IL256373B (de)
TW (4) TWI667491B (de)
WO (1) WO2018012209A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6688861B1 (ja) * 2018-11-12 2020-04-28 浜松ホトニクス株式会社 放射線検出器及びその製造方法
JP7051928B2 (ja) * 2020-04-06 2022-04-11 浜松ホトニクス株式会社 放射線検出器の製造方法
WO2022132282A1 (en) 2020-12-14 2022-06-23 Clearpoint Neuro, Inc. Surgical base assemblies for trajectory guide systems and associated trajectory guide systems
JP7090145B1 (ja) * 2020-12-14 2022-06-23 浜松ホトニクス株式会社 放射線検出器および放射線検出器製造方法

Citations (2)

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US20130026364A1 (en) * 2011-04-26 2013-01-31 Radiation Monitoring Devices Inc. Mixed ionic-electronic conductor-based radiation detectors and methods of fabrication
JP2015102340A (ja) * 2013-11-21 2015-06-04 日立アロカメディカル株式会社 放射線検出素子およびそれを備えた放射線検出器、核医学診断装置ならびに放射線検出素子の製造方法

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Also Published As

Publication number Publication date
TWI667491B (zh) 2019-08-01
EP4213225B1 (de) 2023-12-27
US11555934B2 (en) 2023-01-17
US20220179107A1 (en) 2022-06-09
IL256373B (en) 2018-06-28
EP3675184A1 (de) 2020-07-01
EP3312637A1 (de) 2018-04-25
US11307315B2 (en) 2022-04-19
EP4213225A1 (de) 2023-07-19
EP3907767A1 (de) 2021-11-10
KR101886596B1 (ko) 2018-08-07
US20190346576A1 (en) 2019-11-14
WO2018012209A1 (ja) 2018-01-18
TWI709759B (zh) 2020-11-11
TW201839425A (zh) 2018-11-01
TWI638181B (zh) 2018-10-11
JP2018009801A (ja) 2018-01-18
IL284812B2 (en) 2023-04-01
CN110133707A (zh) 2019-08-16
CN110133707B (zh) 2023-04-14
TWI754403B (zh) 2022-02-01
IL284812A (en) 2021-08-31
TW201944097A (zh) 2019-11-16
EP3675184B1 (de) 2021-11-10
US20210041585A1 (en) 2021-02-11
IL256373A (en) 2018-01-31
US20200264324A1 (en) 2020-08-20
US10859717B2 (en) 2020-12-08
IL278383B (en) 2021-08-31
TW202115428A (zh) 2021-04-16
TW201807836A (zh) 2018-03-01
JP6242954B1 (ja) 2017-12-06
CN107850683B (zh) 2019-07-02
IL284812B (en) 2022-12-01
EP3312637B1 (de) 2020-02-26
CN107850683A (zh) 2018-03-27
US10782427B2 (en) 2020-09-22
IL259536B (en) 2020-11-30
IL259536A (en) 2018-07-31
EP3907767B1 (de) 2023-05-24

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