EP3312637A4 - Strahlungsdetektor - Google Patents
Strahlungsdetektor Download PDFInfo
- Publication number
- EP3312637A4 EP3312637A4 EP17821455.7A EP17821455A EP3312637A4 EP 3312637 A4 EP3312637 A4 EP 3312637A4 EP 17821455 A EP17821455 A EP 17821455A EP 3312637 A4 EP3312637 A4 EP 3312637A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- radiation detector
- detector
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/249—Measuring radiation intensity with semiconductor detectors specially adapted for use in SPECT or PET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Molecular Biology (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP21180810.0A EP3907767B1 (de) | 2016-07-11 | 2017-06-19 | Strahlungsdetektor |
EP23158768.4A EP4213225B1 (de) | 2016-07-11 | 2017-06-19 | Verfahren zur herstellung eines strahlungsdetektors |
EP20155808.7A EP3675184B1 (de) | 2016-07-11 | 2017-06-19 | Strahlungsdetektor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016136788A JP6242954B1 (ja) | 2016-07-11 | 2016-07-11 | 放射線検出器 |
PCT/JP2017/022536 WO2018012209A1 (ja) | 2016-07-11 | 2017-06-19 | 放射線検出器 |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP20155808.7A Division EP3675184B1 (de) | 2016-07-11 | 2017-06-19 | Strahlungsdetektor |
EP23158768.4A Division EP4213225B1 (de) | 2016-07-11 | 2017-06-19 | Verfahren zur herstellung eines strahlungsdetektors |
EP21180810.0A Division EP3907767B1 (de) | 2016-07-11 | 2017-06-19 | Strahlungsdetektor |
Publications (3)
Publication Number | Publication Date |
---|---|
EP3312637A1 EP3312637A1 (de) | 2018-04-25 |
EP3312637A4 true EP3312637A4 (de) | 2018-12-05 |
EP3312637B1 EP3312637B1 (de) | 2020-02-26 |
Family
ID=60570427
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP23158768.4A Active EP4213225B1 (de) | 2016-07-11 | 2017-06-19 | Verfahren zur herstellung eines strahlungsdetektors |
EP21180810.0A Active EP3907767B1 (de) | 2016-07-11 | 2017-06-19 | Strahlungsdetektor |
EP17821455.7A Active EP3312637B1 (de) | 2016-07-11 | 2017-06-19 | Strahlungsdetektor |
EP20155808.7A Active EP3675184B1 (de) | 2016-07-11 | 2017-06-19 | Strahlungsdetektor |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP23158768.4A Active EP4213225B1 (de) | 2016-07-11 | 2017-06-19 | Verfahren zur herstellung eines strahlungsdetektors |
EP21180810.0A Active EP3907767B1 (de) | 2016-07-11 | 2017-06-19 | Strahlungsdetektor |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP20155808.7A Active EP3675184B1 (de) | 2016-07-11 | 2017-06-19 | Strahlungsdetektor |
Country Status (8)
Country | Link |
---|---|
US (4) | US10782427B2 (de) |
EP (4) | EP4213225B1 (de) |
JP (1) | JP6242954B1 (de) |
KR (1) | KR101886596B1 (de) |
CN (2) | CN107850683B (de) |
IL (4) | IL256373B (de) |
TW (4) | TWI754403B (de) |
WO (1) | WO2018012209A1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6688861B1 (ja) * | 2018-11-12 | 2020-04-28 | 浜松ホトニクス株式会社 | 放射線検出器及びその製造方法 |
JP7051928B2 (ja) * | 2020-04-06 | 2022-04-11 | 浜松ホトニクス株式会社 | 放射線検出器の製造方法 |
JP7090145B1 (ja) * | 2020-12-14 | 2022-06-23 | 浜松ホトニクス株式会社 | 放射線検出器および放射線検出器製造方法 |
WO2022132282A1 (en) | 2020-12-14 | 2022-06-23 | Clearpoint Neuro, Inc. | Surgical base assemblies for trajectory guide systems and associated trajectory guide systems |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130026364A1 (en) * | 2011-04-26 | 2013-01-31 | Radiation Monitoring Devices Inc. | Mixed ionic-electronic conductor-based radiation detectors and methods of fabrication |
JP2015102340A (ja) * | 2013-11-21 | 2015-06-04 | 日立アロカメディカル株式会社 | 放射線検出素子およびそれを備えた放射線検出器、核医学診断装置ならびに放射線検出素子の製造方法 |
Family Cites Families (43)
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US4290876A (en) * | 1980-06-05 | 1981-09-22 | Murata Manufacturing Co., Ltd. | Sputtering apparatus |
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JPH0834316B2 (ja) * | 1987-05-06 | 1996-03-29 | 松下電器産業株式会社 | 半導体放射線検出器 |
JPH0983008A (ja) * | 1995-09-12 | 1997-03-28 | Shimadzu Corp | 半導体放射線検出素子 |
US5985691A (en) * | 1997-05-16 | 1999-11-16 | International Solar Electric Technology, Inc. | Method of making compound semiconductor films and making related electronic devices |
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KR100310179B1 (ko) * | 1999-04-01 | 2001-10-29 | 구본준, 론 위라하디락사 | 엑스레이 영상 감지소자 및 그 제조방법 |
AU4603200A (en) * | 1999-04-26 | 2000-11-10 | Simage Oy | Device for imaging radiation |
KR100630880B1 (ko) * | 1999-12-31 | 2006-10-02 | 엘지.필립스 엘시디 주식회사 | 엑스레이 영상 감지소자 및 그 제조방법 |
US6399950B1 (en) * | 2000-11-27 | 2002-06-04 | Shimadzu Corporation | Two-dimensional radiation detector |
JP4112800B2 (ja) * | 2000-12-05 | 2008-07-02 | 富士フイルム株式会社 | 発光素子及びその製造方法 |
KR100483314B1 (ko) * | 2002-03-23 | 2005-04-15 | 학교법인 인제학원 | 디지털 엑스레이 이미지 디텍터 |
WO2004070946A1 (ja) * | 2003-02-10 | 2004-08-19 | Murata Manufacturing Co., Ltd. | 弾性境界波装置 |
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JP2006049773A (ja) * | 2004-08-09 | 2006-02-16 | Toshiba Corp | 放射線検出器 |
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US7884438B2 (en) * | 2005-07-29 | 2011-02-08 | Varian Medical Systems, Inc. | Megavoltage imaging with a photoconductor based sensor |
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JP6049166B2 (ja) * | 2012-05-16 | 2016-12-21 | 株式会社日立製作所 | 半導体放射線検出器およびそれを用いた核医学診断装置 |
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JP2015072201A (ja) | 2013-10-03 | 2015-04-16 | 日立アロカメディカル株式会社 | 半導体放射線検出器、それを用いた核医学診断装置、および半導体放射線検出器の製造方法 |
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-
2016
- 2016-07-11 JP JP2016136788A patent/JP6242954B1/ja active Active
-
2017
- 2017-06-19 CN CN201780002213.XA patent/CN107850683B/zh active Active
- 2017-06-19 EP EP23158768.4A patent/EP4213225B1/de active Active
- 2017-06-19 US US15/740,524 patent/US10782427B2/en active Active
- 2017-06-19 KR KR1020177035643A patent/KR101886596B1/ko active IP Right Grant
- 2017-06-19 EP EP21180810.0A patent/EP3907767B1/de active Active
- 2017-06-19 EP EP17821455.7A patent/EP3312637B1/de active Active
- 2017-06-19 CN CN201910468866.8A patent/CN110133707B/zh active Active
- 2017-06-19 EP EP20155808.7A patent/EP3675184B1/de active Active
- 2017-06-19 WO PCT/JP2017/022536 patent/WO2018012209A1/ja active Application Filing
- 2017-06-28 TW TW109134396A patent/TWI754403B/zh active
- 2017-06-28 TW TW106121633A patent/TWI638181B/zh active
- 2017-06-28 TW TW107126064A patent/TWI667491B/zh active
- 2017-06-28 TW TW108117490A patent/TWI709759B/zh active
- 2017-12-18 IL IL256373A patent/IL256373B/en active IP Right Grant
-
2018
- 2018-05-22 IL IL259536A patent/IL259536B/en active IP Right Grant
-
2020
- 2020-05-05 US US16/866,816 patent/US10859717B2/en active Active
- 2020-10-12 US US17/067,985 patent/US11307315B2/en active Active
- 2020-10-29 IL IL278383A patent/IL278383B/en unknown
-
2021
- 2021-07-13 IL IL284812A patent/IL284812B2/en unknown
-
2022
- 2022-02-23 US US17/678,871 patent/US11555934B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130026364A1 (en) * | 2011-04-26 | 2013-01-31 | Radiation Monitoring Devices Inc. | Mixed ionic-electronic conductor-based radiation detectors and methods of fabrication |
JP2015102340A (ja) * | 2013-11-21 | 2015-06-04 | 日立アロカメディカル株式会社 | 放射線検出素子およびそれを備えた放射線検出器、核医学診断装置ならびに放射線検出素子の製造方法 |
Non-Patent Citations (5)
Title |
---|
KIM KI HYUN ET AL: "Electro-migration of impurities in TlBr", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 114, no. 13, 7 October 2013 (2013-10-07), XP012175473, ISSN: 0021-8979, [retrieved on 19010101], DOI: 10.1063/1.4823781 * |
See also references of WO2018012209A1 * |
SIMANOVSKIS A ET AL: "Ageing effects in Me/TlBr-TlI systems", THIN SOLID FILMS, ELSEVIER, AMSTERDAM, NL, vol. 232, no. 1, 10 September 1993 (1993-09-10), pages 87 - 93, XP025732501, ISSN: 0040-6090, [retrieved on 19930910], DOI: 10.1016/0040-6090(93)90767-J * |
STOLYAROVA S ET AL: "Ambient-induced interface reactions and adhesion failure in the Ag/TlBr-TlI system", THIN SOLID FILMS, ELSEVIER, AMSTERDAM, NL, vol. 177, no. 1-2, October 1989 (1989-10-01), pages 181 - 188, XP025852078, ISSN: 0040-6090, [retrieved on 19891001], DOI: 10.1016/0040-6090(89)90566-X * |
VASILIJ KOZLOV: "TlBr raw material purification, crystal growth, annealing, detector fabrication and characterisation for gamma-ray detector applications", 12 March 2010 (2010-03-12), XP055516102, Retrieved from the Internet <URL:https://core.ac.uk/download/pdf/14916638.pdf> * |
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Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
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