JP2018009801A - 放射線検出器 - Google Patents
放射線検出器 Download PDFInfo
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- JP2018009801A JP2018009801A JP2016136788A JP2016136788A JP2018009801A JP 2018009801 A JP2018009801 A JP 2018009801A JP 2016136788 A JP2016136788 A JP 2016136788A JP 2016136788 A JP2016136788 A JP 2016136788A JP 2018009801 A JP2018009801 A JP 2018009801A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/249—Measuring radiation intensity with semiconductor detectors specially adapted for use in SPECT or PET
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
- H10F30/295—Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors
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- H—ELECTRICITY
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- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/301—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
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- Measurement Of Radiation (AREA)
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Abstract
【解決手段】放射線検出器1Aは、第1電極10Aと、第2電極20Aと、これら第1電極10Aと第2電極20Aとの間に設けられる臭化タリウム(TlBr)結晶30とを備える。第1電極10Aは合金層12を有する。第2電極20Aは合金層22を有する。合金層12,22は、タリウム(Tl)金属と他の金属元素との合金からなる。
【選択図】図1
Description
Claims (8)
- 第1電極と、第2電極と、これら第1電極と第2電極との間に設けられる臭化タリウム結晶とを備え、
前記第1電極および前記第2電極の双方または何れか一方が、タリウム金属と他の金属元素との合金からなる合金層を有する、
放射線検出器。 - 前記合金層が、前記他の金属元素として、鉛、銀、ビスマスおよびインジウムのうちの何れか1種以上の金属元素を含む、
請求項1に記載の放射線検出器。 - 前記合金層の表面に、前記合金層より低抵抗の金属からなる低抵抗金属層が設けられている、
請求項1または2に記載の放射線検出器。 - 前記低抵抗金属層が金からなる、
請求項3に記載の放射線検出器。 - 前記合金層と前記低抵抗金属層との間に、前記合金層と前記低抵抗金属層との付着力を高める導電性の中間層が設けられている、
請求項3または4に記載の放射線検出器。 - 前記中間層が、クロム、ニッケルおよびチタンのうちの何れかの金属からなる、
請求項5に記載の放射線検出器。 - 前記臭化タリウム結晶と前記合金層との間に、前記臭化タリウム結晶と前記合金層との付着力を高める導電性の下地層が設けられている、
請求項1〜6の何れか1項に記載の放射線検出器。 - 前記下地層が、クロム、ニッケルおよびチタンのうちの何れかの金属からなる、
請求項7に記載の放射線検出器。
Priority Applications (21)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016136788A JP6242954B1 (ja) | 2016-07-11 | 2016-07-11 | 放射線検出器 |
| CN201780002213.XA CN107850683B (zh) | 2016-07-11 | 2017-06-19 | 放射线检测器 |
| EP21180810.0A EP3907767B1 (en) | 2016-07-11 | 2017-06-19 | Radiation detector |
| EP23158768.4A EP4213225B1 (en) | 2016-07-11 | 2017-06-19 | Method for manufacturing a radiation detector |
| US15/740,524 US10782427B2 (en) | 2016-07-11 | 2017-06-19 | Radiation detector having an alloyed electrode |
| EP20155808.7A EP3675184B1 (en) | 2016-07-11 | 2017-06-19 | Radiation detector |
| EP17821455.7A EP3312637B1 (en) | 2016-07-11 | 2017-06-19 | Radiation detector |
| CN201910468866.8A CN110133707B (zh) | 2016-07-11 | 2017-06-19 | 放射线检测器 |
| PCT/JP2017/022536 WO2018012209A1 (ja) | 2016-07-11 | 2017-06-19 | 放射線検出器 |
| KR1020177035643A KR101886596B1 (ko) | 2016-07-11 | 2017-06-19 | 방사선 검출기 |
| TW107126064A TWI667491B (zh) | 2016-07-11 | 2017-06-28 | Radiation detector |
| TW109134396A TWI754403B (zh) | 2016-07-11 | 2017-06-28 | 放射線檢出器 |
| TW106121633A TWI638181B (zh) | 2016-07-11 | 2017-06-28 | Radiation detector |
| TW108117490A TWI709759B (zh) | 2016-07-11 | 2017-06-28 | 放射線檢出器 |
| IL256373A IL256373B (en) | 2016-07-11 | 2017-12-18 | Radiation detector |
| IL259536A IL259536B (en) | 2016-07-11 | 2018-05-22 | radiation detector |
| US16/866,816 US10859717B2 (en) | 2016-07-11 | 2020-05-05 | Radiation detector |
| US17/067,985 US11307315B2 (en) | 2016-07-11 | 2020-10-12 | Radiation detector |
| IL278383A IL278383B (en) | 2016-07-11 | 2020-10-29 | radiation detector |
| IL284812A IL284812B2 (en) | 2016-07-11 | 2021-07-13 | A method for producing a radiation detector |
| US17/678,871 US11555934B2 (en) | 2016-07-11 | 2022-02-23 | Radiation detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016136788A JP6242954B1 (ja) | 2016-07-11 | 2016-07-11 | 放射線検出器 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017215648A Division JP6430610B2 (ja) | 2017-11-08 | 2017-11-08 | 放射線検出器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP6242954B1 JP6242954B1 (ja) | 2017-12-06 |
| JP2018009801A true JP2018009801A (ja) | 2018-01-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| JP2016136788A Active JP6242954B1 (ja) | 2016-07-11 | 2016-07-11 | 放射線検出器 |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US10782427B2 (ja) |
| EP (4) | EP4213225B1 (ja) |
| JP (1) | JP6242954B1 (ja) |
| KR (1) | KR101886596B1 (ja) |
| CN (2) | CN107850683B (ja) |
| IL (4) | IL256373B (ja) |
| TW (4) | TWI667491B (ja) |
| WO (1) | WO2018012209A1 (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019015743A (ja) * | 2018-10-31 | 2019-01-31 | 浜松ホトニクス株式会社 | 放射線検出器 |
| WO2022130748A1 (ja) * | 2020-12-14 | 2022-06-23 | 浜松ホトニクス株式会社 | 放射線検出器、検出器モジュールおよび放射線検出器製造方法 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6688861B1 (ja) * | 2018-11-12 | 2020-04-28 | 浜松ホトニクス株式会社 | 放射線検出器及びその製造方法 |
| JP7051928B2 (ja) * | 2020-04-06 | 2022-04-11 | 浜松ホトニクス株式会社 | 放射線検出器の製造方法 |
| WO2022132282A1 (en) | 2020-12-14 | 2022-06-23 | Clearpoint Neuro, Inc. | Surgical base assemblies for trajectory guide systems and associated trajectory guide systems |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019015743A (ja) * | 2018-10-31 | 2019-01-31 | 浜松ホトニクス株式会社 | 放射線検出器 |
| WO2022130748A1 (ja) * | 2020-12-14 | 2022-06-23 | 浜松ホトニクス株式会社 | 放射線検出器、検出器モジュールおよび放射線検出器製造方法 |
| JP7090145B1 (ja) | 2020-12-14 | 2022-06-23 | 浜松ホトニクス株式会社 | 放射線検出器および放射線検出器製造方法 |
| JP2022097770A (ja) * | 2020-12-14 | 2022-07-01 | 浜松ホトニクス株式会社 | 放射線検出器および放射線検出器製造方法 |
| US12360260B2 (en) | 2020-12-14 | 2025-07-15 | Hamamatsu Photonics K.K. | Radiation detector, detector module, and radiation detector production method |
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