EP3010855A1 - Formulations comprenant de l'hydrurosilane et un oligomère d'hydrurosilane, procédé pour leur production, et leur utilisation - Google Patents

Formulations comprenant de l'hydrurosilane et un oligomère d'hydrurosilane, procédé pour leur production, et leur utilisation

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Publication number
EP3010855A1
EP3010855A1 EP14729366.6A EP14729366A EP3010855A1 EP 3010855 A1 EP3010855 A1 EP 3010855A1 EP 14729366 A EP14729366 A EP 14729366A EP 3010855 A1 EP3010855 A1 EP 3010855A1
Authority
EP
European Patent Office
Prior art keywords
hydridosilane
weight
oligomer
formulation according
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP14729366.6A
Other languages
German (de)
English (en)
Inventor
Paul Henrich Wöbkenberg
Matthias Patz
Stephan Traut
Jutta Hessing
Miriam Deborah MALSCH
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Evonik Operations GmbH
Original Assignee
Evonik Degussa GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evonik Degussa GmbH filed Critical Evonik Degussa GmbH
Publication of EP3010855A1 publication Critical patent/EP3010855A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1212—Zeolites, glasses
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • Formulations comprising hydridosilanes and hydridosilane oligomers, processes for their preparation and their use
  • the present invention relates to formulations comprising at least one low molecular weight hydridosilane and at least one hydridosilane oligomer, to processes for their preparation and their use, in particular for the preparation of silicon-containing layers.
  • Hydridosilanes or their oligomers are in the literature as possible starting materials for the
  • Hydridosilanes are compounds which essentially contain only silicon and hydrogen atoms and which have less than 20 silicon atoms. Hydridosilanes can in principle be gaseous, liquid or solid and are - especially in the case of solids - substantially soluble in solvents such as toluene or cyclohexane or in liquid silanes such as cyclopentasilane. Examples which may be mentioned are monosilane, disilane, trisilane, cyclopentasilane and neopentasilane.
  • Hydridosilane compound in the presence of a hydridosilane polymer with at least 500 g / mol is thermally reacted.
  • Silicon-containing layers can be deposited from the gas phase in vacuum chambers, for. Via PECVD.
  • gas phase processes are technically complex and often do not lead to layers of desired quality.
  • liquid phase processes are often preferred for producing silicon-containing layers.
  • the prior art describes various hydridosilane-containing formulations.
  • the usable semiconductor precursors also include hydridosilanes.
  • WO 2008/13781 1 A2 discloses compositions containing one or more semiconductor precursors selected from a group comprising (poly) silanes.
  • US 2009/0215219 A1 also discloses a method for producing a semiconductor layer in which a silicon atom-containing liquid
  • Coating composition is applied to a substrate.
  • Coating composition may include a silane polymer, which may be a polyhydridosilane.
  • a silane polymer which may be a polyhydridosilane.
  • US 2010/0197102 A1 discloses solutions containing a compound which is preferably a silane having four to nine silicon atoms. Coating compositions containing a polysilane are also described in EP 1 357 154 A1.
  • EP 1 640 342 A1 further discloses silane polymers having a weight-average molecular weight of 800 to 5000 g / mol, which can be used for producing silicon-containing films.
  • JP 2008-270603 A and JP 09-45922 A disclose
  • Coating compositions for producing silicon-containing films in which various silicon compounds can be used as precursors are not disclosed in the cited references.
  • JP 2004-134440 A discloses coating compositions for producing silicon-containing films containing various silane compounds and cyclic silanes.
  • EP 1 085 579 A1 and EP 1 087 428 A1 also disclose coating compositions for producing silicon-containing layers in which two silicon precursors are used. These are a cyclic silicon compound and a doped silicon compound.
  • JP 2000-031066 A discloses liquid coating compositions containing a hydrido-silane of the generic formula Si n H 2n + 20 of Si n H 2n or mixtures of the two.
  • DE 10 2010 030 696 A1 likewise discloses liquid coating compositions which may comprise hydridosilanes as silicon precursors.
  • Low molecular weight hydridosilanes have disadvantages in the production of silicon-containing layers.
  • they are not suitable for the production of very thin silicon-containing layers (Layers with a maximum thickness of 25 nm), since at typical conversion temperatures the low molecular weight material vaporizes before it can crosslink.
  • coating compositions containing high molecular weight hydridosilane oligomers are often used as an alternative.
  • these high molecular weight hydridosilane oligomers are in principle suitable for producing silicon-containing layers, they have the disadvantage that they dissolve only poorly in organic solvents, which leads to disadvantages of the layers produced with them. For this reason, existing in the art
  • Coating compositions which, in addition to high molecular weight hydridosilane oligomers, also comprise low molecular weight hydridosilanes, the latter acting as solubilizers.
  • the prior art describes coating compositions for producing silicon-containing layers containing a hydridosilane oligomer blended with a cyclic hydridosilane (Masuda et al., Thin Solid Films 520 (2012) 5091-5096).
  • corresponding coating compositions containing a cyclic hydridosilane have the disadvantage that they are stable only at high concentrations of cyclic hydridosilanes.
  • the formulations quickly turn cloudy and are then not suitable for producing high quality silicon-containing layers.
  • Hydridosilane oligomers are incorporated in the conversion in the composite layer. Because of this, these compounds in coating compositions containing hydridosilane oligomers are not suitable for producing thinner (corresponding to thicknesses less than or equal to 25 nm) and high-quality silicon-containing layers.
  • Appropriate Formulations are particularly suitable for the production of high-quality, thin layers with less than 25 nm thickness, in particular with thicknesses of 1-15 nm, from the liquid phase and wet in the coating process common substrates well.
  • the claimed formulation is in the present case a composition which comprises at least one hydridosilane and at least one hydridosilane oligomer or consists of a mixture of the two.
  • the formulation is liquid, since it is so easy to handle.
  • it is also in the inventive
  • composition of a coating composition especially for liquid phase or CVD deposition processes.
  • Corresponding coating compositions have the advantage of being suitable for the deposition of silicon-containing layers, in particular for the processes mentioned.
  • the composition of the invention is a coating composition suitable for liquid phase deposition processes.
  • Hydridosilanes of the formula Si n H 2n + 2 where n 3 to 6 are non-cyclic hydridosilanes.
  • Isomers of these compounds can be linear or branched.
  • Preferred non-cyclic hydridosilanes are trisilane, isotetrasilane, n-pentasilane, 2-silyl-tetrasilane and neopentasilane, the formulations of which result in particularly thin layers.
  • the hydridosilane of said generic formula is a branched hydridosilane, which leads to more stable solutions and better layers than a linear hydridosilane.
  • Further preferred compounds are the branched compounds isotetrasilane, 2-silyl-tetrasilane and neopentasilane, which have the advantage that they stabilize the solutions particularly well and must be used only in particularly small amounts and lead to very particularly thin and good layers.
  • the hydridosilane Most preferably, the hydridosilane
  • the hydridosilane oligomer is the oligomer of a hydridosilane compound, and preferably the oligomer of a hydridosilane.
  • the formulation of the invention is particularly well suited for the production of thin layers, if the
  • Hydridosilane oligomer has a weight average molecular weight of 200 to 10,000 g / ml. Methods for their preparation are known in the art. Appropriate
  • Molecular weights can be determined by gel permeation chromatography using a linear polystyrene column with cyclooctane can be determined as eluent against polybutadiene as a reference.
  • the hydridosilane oligomer is preferably obtained by oligomerization of non-cyclic hydridosilanes. Unlike hydridosilane oligomers of cyclic hydridosilanes, these oligomers have a high crosslinking ratio due to the dissociative polymerization mechanism that proceeds differently. Oligomers of cyclic hydridosilanes instead have due to the ring-opening reaction mechanism, the cyclic
  • Hydridosilanes are subjected, if at all, only a very small proportion of crosslinking.
  • Corresponding oligomers prepared from non-cyclic hydridosilanes unlike oligomers of cyclic hydridosilanes in solution, wet the substrate surface well, can be used particularly well for producing thin layers and lead to homogeneous and smooth surfaces. Even better results are shown by oligomers of non-cyclic, branched hydridosilanes.
  • a particularly preferred hydridosilane oligomer is an oligomer obtainable by thermal reaction of a composition comprising at least one non-cyclic hydridosilane having a maximum of 20 silicon atoms in the absence of a catalyst at temperatures of ⁇ 235 ° C.
  • Corresponding hydridosilane oligomers and their preparation are described in WO
  • This oligomer has even better properties than the other hydridosilane oligomers of non-cyclic, branched hydridosilanes.
  • the hydridosilane oligomer may have other radicals in addition to hydrogen and silicon.
  • advantages of the layers made with the formulations can result when the oligomer is carbonaceous.
  • Corresponding carbon-containing hydridosilane oligomers can be prepared by co-oligomerizing hydridosilanes with hydrocarbons.
  • the hydridosilane oligomer is an exclusively hydrogen- and silicon-containing compound which therefore has no halogen or alkyl radicals.
  • Hydridosilane oligomers which are doped are furthermore preferred for producing doped silicon-containing layers.
  • the hydridosilane oligomers are boron or phosphorous doped and corresponding formulations are suitable for the production of p- or n-doped silicon layers.
  • Corresponding hydridosilane oligomers can be produced by adding the corresponding dopants already during their preparation.
  • undoped hydridosilane oligomers with substances selected from the group of p-dopants, preferably the hydroborating (especially B 2 H 6 , BH 3 * THF, BEt 3 , BMe 3 ) p-doped or with n Dotants (especially PH 3 , P 4 ) by means of an energetic process (eg UV irradiation or thermal treatment) n-doped.
  • p-dopants preferably the hydroborating (especially B 2 H 6 , BH 3 * THF, BEt 3 , BMe 3 ) p-doped or with n Dotants (especially PH 3 , P 4 ) by means of an energetic process (eg UV irradiation or thermal treatment) n-doped.
  • the proportion of the hydridosilane (s) is preferably from 0.1 to 99% by weight, more preferably from 1 to 50% by weight, very preferably from 1 to 30% by weight, based on the total weight of the formulation.
  • the proportion of the or the hydridosilane oligomers is preferably 0.1 to 99 wt .-%, more preferably 1 to 50 wt .-%, most preferably 1 to 20 wt .-% based on the total weight of the formulation.
  • the proportion of the hydridosilane oligomer in the formulation is furthermore preferably 40 to 99.9% by weight, particularly preferably 60 to 99, very particularly preferably 70 to 90% by weight, based on the total mass of the compound present, in order to achieve particularly good results
  • Optimal is thus the range of 70-90 wt .-%, based on the total mass of present hydridosilane and hydridosilane oligomer.
  • the formulation of the invention need not contain a solvent. However, it preferably has at least one solvent. If it contains a solvent, the proportion thereof is preferably 0.1 to 99% by weight, more preferably 25 to 95% by weight, very preferably 60 to 95% by weight, based on the total weight of the formulation.
  • Preferred usable solvents are those selected from the group consisting of linear, branched or cyclic saturated, unsaturated or aromatic hydrocarbons having 1 to 12 carbon atoms (optionally partially or fully halogenated), alcohols, ethers, carboxylic acids, esters, nitriles, amines, amides, Sulfoxides and water.
  • n-pentane n-hexane, n-heptane, n-octane, n-decane, dodecane, cyclohexane, cyclooctane, cyclodecane, dicyclopentane, benzene, toluene, m-xylene, p-xylene, mesitylene, indane, indene .
  • the formulation according to the invention may further comprise, in addition to the at least one hydridosilane and the at least one hydridosilane oligomer and the one or more optionally present
  • Solvents have further substances, in particular dopants (preferably B 2 H 6 , BH 3 * THF, BEt 3 , BMe 3 , PH 3 , P 4 ), nanoparticles or additives for adjusting the rheological properties. Corresponding substances are known to the person skilled in the art.
  • the present invention furthermore relates to a process for producing silicon-containing layers, in which the formulation according to the invention, in particular the
  • Coating composition applied from the gas phase or the liquid phase to an uncoated or precoated substrate and is converted thermally and / or with electromagnetic radiation in a silicon-containing layer.
  • a multiplicity of substrates can be used.
  • Substrates consisting of glass, quartz glass, graphite, metal, silicon or consisting of a silicon, indium tin oxide, ZnO: F, ZnO: Al or SnO 2 : F layer on a heat-compatible support are preferred.
  • Preferred metals are aluminum, stainless steel, Cr steel, titanium, chromium or molybdenum.
  • plastic films for example made of PEEK, PEN, PET or polyimides).
  • the formulation is preferably applied by a gas or liquid-phase coating process selected from printing processes (in particular flexo / gravure printing, nanoimage or microimprint, inkjet printing, offset printing, reverse offset printing, digital offset printing and screen printing ), Spray method, aerosol assisted chemical vapor deposition, direct liquid injection chemical vapor deposition, spin coating, dip coating and method selected from Meniscus Coating, Slit Coating, Slot Die Coating, and Curtain coating.
  • a gas or liquid-phase coating process selected from printing processes (in particular flexo / gravure printing, nanoimage or microimprint, inkjet printing, offset printing, reverse offset printing, digital offset printing and screen printing ), Spray method, aerosol assisted chemical vapor deposition, direct liquid injection chemical vapor deposition, spin coating, dip coating and method selected from Meniscus Coating, Slit Coating, Slot Die Coating, and Curtain coating.
  • aerosol-assisted chemical vapor deposition and direct liquid injection chemical vapor deposition are attributable to the gas phase process.
  • the application is carried out via a liquid
  • the coated substrate can furthermore preferably be dried before the conversion in order to remove any solvent present.
  • the heating temperature should be less than 200 ° C.
  • the thermal conversion of the process according to the invention is preferably carried out at temperatures of 200-1000 ° C., preferably 250-750 ° C., particularly preferably 300-700 ° C. Thermal conversion times are preferably between 0.1 ms and 360 min. The conversion time is more preferably between 0.1 ms and 10 minutes, more preferably between 1 s and 120 s.
  • Corresponding rapid energetic process guides can be, for example, by the use of an IR lamp, a hot plate, an oven, a flashlamp, a plasma with a suitable gas composition, an RTP system, a microwave system or a
  • Electron beam treatment (if necessary, in the preheated or warmed up state) done.
  • a conversion by irradiation with electromagnetic radiation, in particular with UV light take place.
  • the conversion time can preferably be between 1 s and 360 min.
  • Enrichment of the silicon-containing layers can be carried out with hydrogen.
  • This is a so-called “hydrogen passivation", which compensates for defects in the material, and for example with reactive hydrogen by the Hotwire method, with a hydrogen-containing plasma (remote or direct, in vacuum or at atmospheric pressure) or by corona treatment or a
  • the drying and / or the conversion step mentioned above can also be carried out in a hydrogen-enriched atmosphere, so that the material is hydrogen-rich from the outset.
  • oxidizing conditions For producing silicon oxide-containing layers, application, pre-crosslinking, drying and / or conversion under oxidizing conditions can furthermore be carried out. How oxidizing conditions can be set is known to the person skilled in the art.
  • the layer can be crystallized after conversion by the introduction of thermal energy, electromagnetic radiation and / or particle bombardment. Methods for this are known to the person skilled in the art.
  • the method described for the production of silicon-containing layers can furthermore be carried out several times simultaneously with respect to a substrate or consecutively in time (simultaneous or successive deposition, the resulting films being partly or completely superposed on one another).
  • Such a method for the production of multilayer systems is preferably suitable for the production of systems composed of intrinsic (ie non-doped) and doped layers, the z. B. are essential for the construction of solar cells.
  • the method is particularly preferably suitable for producing multilayer systems for optimum passivation or avoidance of defects at the interface with the substrate if a thin intrinsic (ie undoped) silicon-containing layer and then a layer doped opposite to the substrate are applied to the substrate.
  • a substantially dopant-free formulation is then applied to a doped substrate, followed by a formulation having an opposite dopant with respect to the substrate.
  • the substrate can be coated on both sides.
  • hydridosilane formulations which can be prepared according to the invention are suitable for a large number of uses. They are particularly well suited - in isolation or together with other formulations - for the production of electronic or optoelectronic
  • the invention thus also relates to the use of the hydridosilane formulations obtainable by the process according to the invention for producing optoelectronic or electronic component layers. Furthermore, an object of the invention is the use of the hydridosilane formulations according to the invention for
  • the hydridosilane formulations obtainable by the process according to the invention are preferably suitable for the preparation of charge-transporting components in optoelectronic or electronic components.
  • the hydridosilane formulations obtainable by the process according to the invention are furthermore suitable for the preparation of silicon-containing layers.
  • formulations according to the invention and the process according to the invention are suitable for the preparation of the following layers or components:
  • neopentasilane M w ⁇ 2200 g / mol
  • the resulting layer thickness is 6.5 nm.
  • the layers are suitable in principle for semiconductor applications, but have disadvantages.
  • Si wafer with 300 nm thermally grown Si0 2 is a mixture of 0.2 g undoped hydridosilane oligomer (28.6 wt .-%, based on the total mass of present hydridosilane and hydridosilane oligomer) from neopentasilane (M w 2200 g / mol) and 0.5 g of neopentasilane in 1 g of cyclooctane and 6 g of toluene at 9999 rpm and then converted at 500 ° C / 60 s.
  • the resulting layer thickness is 6.5 nm.
  • the layers are in principle suitable for semiconductor applications, but have disadvantages.
  • a mixture of 0.26 g of undoped hydridosilane oligomer (66.7% by weight, based on the total mass of hydridosilane present and hydridosilane present) is applied to an EagleXG glass. Oligomer) from neopentasilane (Mw ⁇ 1200 g / mol) and 0.13 g of neopentasilane in 1.60 g
  • n-doped hydridosilane oligomer 80 wt .-%, based on the total mass of hydridosilane present and Hydridosilan- oligomer
  • M w ⁇ 1 120 g / mol 0.02 g of neopentasilane in 0.18 g of cyclooctane and 0.42 g of toluene coated at 9999 U / min and then converted at 500 ° C / 60 s.
  • the resulting layer thickness is 12 nm. It can reproducibly very good

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Abstract

L'invention concerne des formulations comprenant au moins un hydrurosilane, de formule générique SinH2n+2 , dans laquelle n = 3 - 6, et au moins un oligomère d'hydrurosilane, un procédé pour leur production, et leur utilisation.
EP14729366.6A 2013-06-18 2014-06-12 Formulations comprenant de l'hydrurosilane et un oligomère d'hydrurosilane, procédé pour leur production, et leur utilisation Withdrawn EP3010855A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102013010102.6A DE102013010102A1 (de) 2013-06-18 2013-06-18 Formulierungen umfassend Hydridosilane und Hydridosilan-Oligomere, Verfahren zu ihrer Herstellung und ihrer Verwendung
PCT/EP2014/062244 WO2014202459A1 (fr) 2013-06-18 2014-06-12 Formulations comprenant de l'hydrurosilane et un oligomère d'hydrurosilane, procédé pour leur production, et leur utilisation

Publications (1)

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EP3010855A1 true EP3010855A1 (fr) 2016-04-27

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EP14729366.6A Withdrawn EP3010855A1 (fr) 2013-06-18 2014-06-12 Formulations comprenant de l'hydrurosilane et un oligomère d'hydrurosilane, procédé pour leur production, et leur utilisation

Country Status (8)

Country Link
US (1) US10457813B2 (fr)
EP (1) EP3010855A1 (fr)
JP (1) JP6410808B2 (fr)
KR (1) KR20160021120A (fr)
CN (1) CN105555709B (fr)
DE (1) DE102013010102A1 (fr)
TW (1) TW201512092A (fr)
WO (1) WO2014202459A1 (fr)

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US10457813B2 (en) 2019-10-29
CN105555709B (zh) 2018-01-19
JP6410808B2 (ja) 2018-10-24
TW201512092A (zh) 2015-04-01
WO2014202459A1 (fr) 2014-12-24
CN105555709A (zh) 2016-05-04
DE102013010102A1 (de) 2014-12-18
US20160145439A1 (en) 2016-05-26
JP2016522154A (ja) 2016-07-28

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