EP2994935A1 - Procédé permettant d'assembler des surfaces de contact métalliques par détachement d'une couche sacrificielle appliquée sur une des surfaces de contact dans au moins une des surfaces de contact - Google Patents

Procédé permettant d'assembler des surfaces de contact métalliques par détachement d'une couche sacrificielle appliquée sur une des surfaces de contact dans au moins une des surfaces de contact

Info

Publication number
EP2994935A1
EP2994935A1 EP13734099.8A EP13734099A EP2994935A1 EP 2994935 A1 EP2994935 A1 EP 2994935A1 EP 13734099 A EP13734099 A EP 13734099A EP 2994935 A1 EP2994935 A1 EP 2994935A1
Authority
EP
European Patent Office
Prior art keywords
bonding
sacrificial layer
substrate
preferably less
contact areas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP13734099.8A
Other languages
German (de)
English (en)
Inventor
Bernhard REBHAN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EV Group E Thallner GmbH
Original Assignee
EV Group E Thallner GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EV Group E Thallner GmbH filed Critical EV Group E Thallner GmbH
Priority to EP17172555.9A priority Critical patent/EP3301706A1/fr
Publication of EP2994935A1 publication Critical patent/EP2994935A1/fr
Ceased legal-status Critical Current

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    • H01L2224/83012—Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow
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    • H01L2224/83905—Combinations of bonding methods provided for in at least two different groups from H01L2224/838 - H01L2224/83904
    • H01L2224/83907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]

Definitions

  • the present invention relates to a method for bonding a first contact surface of a first substrate to a second contact surface of a second substrate according to claim 1.
  • the bonding technology allows a connection of two or more, usually very precisely to each other
  • prebond
  • the Prebond is an extremely useful tool for pre-fixing two substrates, especially after an alignment process, as the two substrates are not allowed to move towards each other after the alignment process.
  • the prebond is likely to be on Van der Waals
  • Substrate surfaces Under certain circumstances, isolated, covalent bonds between the substrate surfaces may even occur at room temperature, even without additional temperature and / or force loading of the substrates. The number of covalent compounds formed at room temperature, however, should be negligible.
  • liquids could increase a corresponding adhesion between substrates.
  • the liquid compensates for unevenness on the surfaces of the substrates and forms even, preferably even permanent, dipoles.
  • a pronounced Prebond merge is mainly found on non-metallic surfaces.
  • Semiconductors such as silicon, ceramics, above all oxides, metal oxides which are polished and extremely flat, show a corresponding behavior upon contacting.
  • non-metallic surfaces ie surfaces which show a predominantly covalent bonding character, such as Si, Si0 2, etc.
  • a previously applied liquid film can during through Heat treatment resulting covalent bonds even contribute to the reinforcement of the permanent bond.
  • the non-metallic surfaces are subjected to a heat treatment after the Prebond.
  • the liquid layers thus do not necessarily improve only the Prebond but also carry
  • Reactants for the oxygen are then in particular the atoms of the substrate surfaces in question.
  • Liquid directly participate in the permanent bonding process of the substrate surfaces, not necessarily occur.
  • the bonding process is completely different with pure metal surfaces. Since metals are chemically and physically completely different due to their metallic binding character, a completely different bonding strategy is required. Metals are bonded together, especially at higher temperatures and usually under very high pressure. The high temperatures, lead to increased diffusion along the surfaces and / or the grain boundaries and / or the volume. Due to the increased mobility of the atoms, different physical and chemical effects occur, which lead to a welding of the two surfaces. The disadvantage of such metal bonds is therefore particularly in the use of very high
  • Oxide layer covered metal surfaces to produce a Prebond.
  • this oxide layer is in turn undesirable if one intends to directly bond two metals together, for example, to connect two conductive contacts together.
  • the heat treatment of the substrates requires correspondingly long heating and cooling times.
  • the high temperatures can also lead to disturbances in functional units such as microchips and especially in memory chips and damage them to uselessness.
  • substrates with corresponding surfaces must be aligned with each other before the actual bonding step. This once performed alignment may not be destroyed until the final, so permanent bonding process. Especially at higher levels
  • the two substrates to be joined consist of two different materials with different thermal expansion coefficients. These shifts are the greater, ever greater is the difference in the thermal expansion coefficients of the different materials.
  • the object of the present invention is to provide a most efficient method for low-temperature and / or low-pressure bonding of materials.
  • the invention is based on the idea to deposit at least one ultrathin sacrificial layer on at least one of the contact surfaces of the substrates to be bonded, which during the inventive
  • a further aspect of the invention is that the bonding of metal surfaces by a previous wetting process with a material, in particular at least predominantly a liquid,
  • a sacrificial layer preferably at least predominantly water, is used as a sacrificial layer, in particular for producing a pre-bond between the substrates. Also conceivable is a combination of several sacrificial layers
  • Sacrificial layer and a deposited thereon liquid sacrificial layer can be applied one above the other.
  • the substrate consists in particular of silicon, wherein on the substrate a, in particular metallic, preferably consisting of Cu, bonding layer is applied at least in bonding areas.
  • bonding layer does not cover the entire substrate, the bonding regions are preferably surrounded by bulk material, in particular the substrate, and together form the, in particular flat, contact surface.
  • the material layer preferably consists of a material in which the solubility limit for the material of the sacrificial layer is never reached.
  • the material of the sacrificial layer dissolves completely in the material layer on at least one of the contact surfaces, preferably on both contact surfaces.
  • the concentration is preferably given in atomic percent (at%).
  • the solubility of the material of the sacrificial layer in, in particular metallic, material is at least one of the contact surfaces between 0 at% and 10 at%, with preference between 0 at% and 1 at%, more preferably between 0 at% and 0. 1 at %, most preferably between 0 at% and 0.01 at%, most preferably between 0 at% and 0.001 at%, most preferably between 0 at% and 0.0001 at%.
  • the thickness of the sacrificial layer is less than 10 nm, more preferably less than 10 nm, more preferably less than 1 nm, most preferably less than 1 nm.
  • the ratio of the thickness of the sacrificial layer to the thickness of the substrates, in particular bonding regions of the substrates is - 2 -4 less than 1, preferably less than 10 " , preferably less than 10 " , more preferably less than 10 "6 , even more preferably less than 10 " 8
  • the sacrificial layer can be applied to at least one of the contact surfaces by any desired deposition method. Preference is given to deposition processes which produce as coarse-grained and / or at least predominantly monocrystalline sacrificial layers. In accordance with the invention conceivable deposition methods are in particular:
  • PVD Physical Vapor Deposition
  • Resublimation such as the direct separation of water from water vapor on a surface
  • the sacrificial layer in particular Si
  • the bonding layer in particular Cu
  • the sacrificial layer according to the invention consists in particular of a material which is suitable for forming a pre-bond and has a solubility in the bonding and / or bulk region at the contact surfaces of at least one of the substrates to be contacted.
  • the sacrificial layer consists in particular at least partially, preferably predominantly, of at least one of the following materials or substances:
  • metals in particular o Cu, Ag, Au, Al, Fe, Ni, Co, Pt, W, Cr, Pb, Ti, Te, Sn and / or Zn,
  • the bonding region is a layer extending over the entire contact surface of the substrate.
  • the roughness of the surface of the bond area is reduced in particular by known methods. It is preferred to use a chemical-mechanical polishing (CMP) process.
  • CMP chemical-mechanical polishing
  • the entire bond area surface is covered with the sacrificial layer according to the invention.
  • the sacrificial layer is applied in such a way or after the application that the average roughness values are less than ⁇ ⁇ , preferably less than 500nm, more preferably less than 1 ⁇ m, even more preferably less than 1 mm, most preferably less than 1nm.
  • a plurality of bonding regions distributed over the entire contact surface are provided.
  • the bonding regions form a topography which projects beyond the contact surface of at least one of the substrates, ie project beyond its surface.
  • the bond areas are preferably surrounded by any bulk material.
  • the surfaces of the bulk material and the bond area surface form a common plane E.
  • the surfaces consisting of conductive areas and surrounded by non-conductive areas are also known as hybrid surfaces.
  • Areas consist of a dielectric and insulate the conductive ones
  • the simplest conceivable embodiment would be contact pads isolated by dielectrics for charge transport. By bonding these hybrid surfaces, a conductive connection between the substrates via the allied contact points can be achieved.
  • the local bond areas are, in particular, copper plugs (copper pads),
  • Cu pads are used in particular for the electrical connection between functional units in the different layer systems.
  • Metal j oints could in particular be silicon vias (TSVs).
  • TSVs silicon vias
  • a metal frame may be a micro package for a MEMS device.
  • the two substrates formed as arbitrary layer systems are approximated so that the sacrificial layer (s) applied on the contact surfaces touch each other and form a prebond.
  • the roughness of the sacrificial layer surfaces can be largely reduced by chemical and / or mechanical methods, preferably eliminated.
  • the layer systems can be aligned with one another in an alignment unit in front of the prebond.
  • the sacrificial layer surfaces can, according to the invention, be wetted with a liquid, preferably with water.
  • a liquid preferably with water.
  • the applied liquid layer is thinner than 10 nm, more preferably thinner than 1 nm, most preferably thinner than 1 nm, most preferably only one monolayer.
  • hydrophilic surfaces it is sufficient to expose the substrate to the ambient atmosphere. The surface is then wetted by the water vapor from the atmosphere.
  • the liquid can be applied according to the invention in particular by condensation.
  • the substrate to be coated preferably in the cooled state, in a
  • Sacrificial layer in particular as a liquid, by a
  • the material of the sacrificial layer in particular as a liquid, by a
  • Sprühbelackungsstrom sprayed onto the contact surface of at least one of the substrates.
  • the water is through a
  • the water is evaporated in a simple evaporator and passed to the surface of the substrate.
  • the temperature of the water is brought as close to the boiling point to increase the kinetic energy of the water and thus to accelerate the evaporation. By evacuating the reaction chamber, the boiling point can be reduced accordingly and the process can thus be optimized.
  • reaction chambers which can deposit the sacrificial layers according to the invention precisely results accordingly also a system according to the invention, referred to in the further course of the patent as a reaction chamber.
  • the Prebond is preferably initiated at a contact point of the contact surfaces and spreads over the entire surface by a bonding wave.
  • the contact of both sacrificial layer surfaces can be produced in particular by a pin which bends one of the two substrates, so that the contact surface of this substrate convexly deformed and with the sacrificial layer surface of the second, in particular plan on one
  • Receiving surface resting substrate is brought into contact.
  • the two bonded substrates are heat treated.
  • the heat treatment takes place at the lowest possible temperatures, ideally at room temperature.
  • the temperature is less than 500 ° C, more preferably less than 400 ° C, more preferably less than 300 ° C, even more preferably less than 200 ° C, most preferably less than 100 ° C, most preferably less than 50 ° C.
  • a rapid diffusion of atoms of the sacrificial layer, in particular exclusively, in the bond areas is made possible.
  • the diffusion according to the invention is accelerated and / or promoted by a heat treatment.
  • the atoms of the sacrificial layer dissolve
  • the pressure on the surface is between 0.10 MPa and 10MPa, preferably between 0.1 MPa and 8MPa, more preferably between I MPa and 5MPa, most preferably between 1.5MPa and 3MPa. These values correspond approximately to a load of 1 kN to 320 kN for a 200 mm substrate.
  • the surface of the sacrificial layer should be before the invention
  • Prebondvorgang free of contamination and / or at least predominantly, preferably completely, free of oxides.
  • a cleaning of the sacrificial layer surface is made.
  • the removal of oxides can be carried out by physical and / or chemical methods known to those skilled in the art. These include chemical reduction by gases and / or
  • Chemical removal of oxides is the removal of the oxide by a chemical process.
  • a chemical process is a matter of transformation.
  • the oxide is reduced by a reducing agent in the gaseous and / or liquid phase and oxidizes the reducing agent corresponding to the new compound.
  • the oxidized reducing agent, ie the reaction product is removed accordingly.
  • a typical reducing agent is, for example, hydrogen.
  • Physical oxide removal is the removal of the oxide by a physical process. In a physical process, there is no material conversion but a purely mechanical removal of the oxide from the surface of the substrate.
  • the most commonly used physical reduction technology is plasma technology. In this case, a plasma is generated, which is accelerated by appropriate fields on the surface of the substrate and a corresponding physical oxide removal accomplished. It is also conceivable
  • a sputtering technology In contrast to the plasma, a statistical many-body system is not generated in the reaction chamber, but instead ions are generated in an antechamber and accelerated to a substrate. Finally, grinding and polishing would be called oxide removal processes. By a grinding or polishing tool, the oxide is gradually removed. Sanding and polishing is particularly suitable as a pretreatment process when dealing with very thick oxide layers in the micrometer range. For the correct removal of oxide layers in the nanometer range, these methods are less suitable.
  • the resulting oxides are preferably before coating the bond area surfaces and / or Bulkmaterialoberfest with the Sacrificial layer surfaces and / or before bonding the
  • Contact angle measuring devices can be placed in corresponding module groups of the
  • a bonding process is carried out between the bond area surfaces with water as the sacrificial layer.
  • the reaction chamber can be evacuated.
  • The, in particular continuous, evacuation of the reaction chamber is also advantageous to allow a targeted adjustment of the atmosphere.
  • the reaction chamber is part of a module of a vacuum cluster, preferably part of a low vacuum cluster, more preferably a high vacuum cluster, most preferably part of a vacuum cluster
  • Ultrahigh vacuum cluster The pressure in the reaction chamber is less than 1 bar, more preferably less than 10 1 mbar, more preferably less than 10 - " 3 mbar, most preferably less than 10 - " 5 mbar, most preferably less than 10 - " 8 mbar.
  • FIG. 1 shows a side view of a first embodiment according to the invention with a full area bonding area
  • FIG. 2 shows a side view of a second embodiment according to the invention with a plurality of local bonding areas
  • FIG. 3 shows a side view of a third embodiment according to the invention with a plurality of local bond areas in the substrate
  • Fig. 5 is a schematic plan view of a device containing the
  • FIG. 1 shows a layer system 7, comprising a first substrate 1 with an interface lo, a bonding region 3 with a bond region surface 3o, and the sacrificial layer 4 with the sacrificial layer surface 4o.
  • the Bonding region 3 extends in the first embodiment over the entire interface area lo of the substrate 1.
  • the bonding area surface 3o forms a first contact area of the first substrate 1.
  • the bonding region 3 may be a component of the first substrate 1, in particular material-integral (ie consisting of the same material) and / or monolithic.
  • the sacrificial layer 4 is applied over the entire area on the first contact surface.
  • FIG. 2 shows a layer system 7 'in which several, preferably
  • the bond areas 3 'thus form a topography over the surface 10 of the substrate 1. In the shown, preferred
  • the bonding regions 3 'surrounded by a bulk material 5 may be any metal, non-metal, ceramic or polymer, such as a resist. However, preference will be given to a ceramic, in particular S1 3 N 4 or Si x O x N x , even more preferably an oxide ceramic, in particular Si0 2 .
  • the bonding area surfaces 3 'and the bulk material surfaces 5o form a common plane E, namely the first contact area. The flatness of the bond area surfaces 3 'and the bulk material surfaces 5 o and their coplanarity allow optimal deposition of the
  • Sacrificial layer 4 on the first contact surface is
  • FIG. 3 shows a layer system 7 "comprising a structured first substrate 1 'with an interface l o' and a plurality of bonding regions 3 ', preferably distributed regularly in the substrate 1'
  • Bonding area surfaces 3o ' The substrate 1 has been patterned by etching, so that cavities 2 have formed in the substrate 1 '. The resulting cavities 2 are filled with the material for the bond areas 3 ', in particular with a PVD or CVD process. The deposited over the common plane E material of the bond areas 3 'is then removed by a scrubletonnrea. It would be conceivable Removal down to the level E by grinding processes, polishing processes, chemical-mechanical polishing, etc. The substrate 1 'produced in this way with the cavities 2, which form the bonding areas 3' and thus jointly the contact area by filling with material, is subsequently
  • the deposition of the sacrificial layers 4 can take place in such a way that material for the sacrificial layer 4 is deposited until the required layer thickness is reached.
  • the second method is to form the sacrificial layer 4 thicker than desired in a first step and in a second step, a
  • Re-thinning process to reduce to the desired thickness. Also conceivable in this case would be the use of grinding processes and / or
  • the sacrificial layer surfaces 4o may be filled with a
  • the applied water layers are thinner than 10 nm, more preferably thinner than 1 nm, most preferably thinner than 1 nm, most preferably only one monolayer.
  • the Si0 2 layer is approx. 1 .5 nm thick, the water layer on the Si0 2 layer is formed solely by the condensation of the water molecules in the atmosphere.
  • the two substrates 7, 7 ', 7 can be aligned in the x and / or y direction via alignment marks and / or other alignment features along the plane E.
  • the contact of the two sacrificial layers 4 takes place with each other Preferably at a point where one of the two substrates 1, 1 'is convexly formed by a pin
  • a bonding wave is formed which connects both sacrificial layer surfaces firmly together by a prebond.
  • Heat treatment and / or a bonding step performed at low temperatures.
  • the elevated temperature and / or the force leads to a diffusion of the atoms of the sacrificial layers 4 in the bond areas 3, 3 '.
  • the atoms of the sacrificial layers 4 are preferably completely dissolved in the bond areas 3, 3 'and / or the surrounding bulk material 5 and thus lead to a direct bond according to the invention
  • direct bond can be obtained by one of the methods in the
  • the embodiment according to the invention for producing the sacrificial layers is preferably part of a module 8 (sacrificial layer module) of a cluster 9, in particular a low-vacuum, preferably a high-vacuum, with the greatest advantage of an ultra-high vacuum cluster.
  • the cluster 9 consists of an evacuable interior 1 0, which is hermetically separable to all existing modules via module lock gates 1 1.
  • a robot 12 transports the product wafer 1 from module to module.
  • the product wafers 1 arrive via a cluster lock 15 of an input FOUP 1 3 for the incoming product wafer 1 in the Interior 10.
  • the robot 12 sets the product wafer 1 again a FOUP lock 15 in an output FOUP 14 from.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Manufacture Of Switches (AREA)
  • Wire Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Micromachines (AREA)

Abstract

L'invention concerne un procédé permettant d'assembler une première surface de contact au moins en partie métallique d'un premier substrat (1, 1') à une seconde surface de contact au moins en partie métallique d'un second substrat. Ce procédé comprend les étapes suivantes, se déroulant en particulier dans l'ordre suivant : - l'application d'une couche sacrificielle (4) au moins en partie, en particulier majoritairement détachable, dans le matériau d'au moins une des surfaces de contact ; - et l'assemblage des surfaces de contact, par détachement au moins partiel de la couche sacrificielle (4), dans au moins une surface de contact. Les surfaces de contact peuvent être intégralement disposées sur une zone d'assemblage (3). En variante, les surfaces de contact peuvent être composées de plusieurs zones d'assemblage (3'), lesquelles sont entourées par un matériau en vrac (5) ou disposées dans des cavités (2) du substrat. Un liquide (par exemple de l'eau) peut être utilisé pour produire un pré-assemblage entre les substrats.
EP13734099.8A 2013-07-05 2013-07-05 Procédé permettant d'assembler des surfaces de contact métalliques par détachement d'une couche sacrificielle appliquée sur une des surfaces de contact dans au moins une des surfaces de contact Ceased EP2994935A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP17172555.9A EP3301706A1 (fr) 2013-07-05 2013-07-05 Procédé de connexion de surfaces de contact partiellement métalliques de deux substrats à l'aide de plusieurs couches sacrificielles formées l'une sur l'autre, de préférence d'une couche sacrificielle solide et d'une couche sacrificielle liquide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2013/064239 WO2015000527A1 (fr) 2013-07-05 2013-07-05 Procédé permettant d'assembler des surfaces de contact métalliques par détachement d'une couche sacrificielle appliquée sur une des surfaces de contact dans au moins une des surfaces de contact

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KR102124233B1 (ko) 2020-06-18
US20160071817A1 (en) 2016-03-10
US9640510B2 (en) 2017-05-02
EP3301706A1 (fr) 2018-04-04
KR20160030164A (ko) 2016-03-16
KR102158960B1 (ko) 2020-09-23
KR20200071150A (ko) 2020-06-18
TWI826971B (zh) 2023-12-21
JP2016524335A (ja) 2016-08-12
JP6282342B2 (ja) 2018-02-21
CN110310896A (zh) 2019-10-08
TW201921519A (zh) 2019-06-01
TWI735814B (zh) 2021-08-11
TW202236441A (zh) 2022-09-16
CN110310896B (zh) 2023-08-15
CN105340070A (zh) 2016-02-17
SG11201600043RA (en) 2016-02-26
WO2015000527A1 (fr) 2015-01-08
CN105340070B (zh) 2019-08-16
TW202034409A (zh) 2020-09-16

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