DE102004015017A1 - Erzeugung von mechanischen und elektrischen Verbindungen zwischen den Oberflächen zweier Substrate - Google Patents

Erzeugung von mechanischen und elektrischen Verbindungen zwischen den Oberflächen zweier Substrate Download PDF

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Publication number
DE102004015017A1
DE102004015017A1 DE102004015017A DE102004015017A DE102004015017A1 DE 102004015017 A1 DE102004015017 A1 DE 102004015017A1 DE 102004015017 A DE102004015017 A DE 102004015017A DE 102004015017 A DE102004015017 A DE 102004015017A DE 102004015017 A1 DE102004015017 A1 DE 102004015017A1
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layer
substrates
semiconductor material
joining
mechanical
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DE102004015017A
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DE102004015017B4 (de
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Erwin Hacker
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Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
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Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H01L2224/8182—Diffusion bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01072—Hafnium [Hf]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Abstract

Ein Verfahren zur Herstellung einer mechanischen und elektrischen Verbindung zwischen zwei Substraten umfaßt zunächst den Schritt des Bereitstellens der Substrate mit einer metallischen Schicht auf einer Oberfläche von jedem der Substrate und einer Schicht aus amorphem Halbleitermaterial auf den metallischen Schichten. Die Halbleitermaterialschichten werden mechanisch aneinandergefügt, woraufhin die metallischen Schichten und die amorphen Halbleitermaterialschichten erwärmt werden, so daß zwischen den metallischen Schichten und den Halbleitermaterialschichten eine Diffusion zur Erzeugung einer Legierung stattfindet.
DE102004015017A 2004-03-26 2004-03-26 Erzeugung von mechanischen und elektrischen Verbindungen zwischen den Oberflächen zweier Substrate Expired - Fee Related DE102004015017B4 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE102004015017A DE102004015017B4 (de) 2004-03-26 2004-03-26 Erzeugung von mechanischen und elektrischen Verbindungen zwischen den Oberflächen zweier Substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102004015017A DE102004015017B4 (de) 2004-03-26 2004-03-26 Erzeugung von mechanischen und elektrischen Verbindungen zwischen den Oberflächen zweier Substrate

Publications (2)

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DE102004015017A1 true DE102004015017A1 (de) 2005-10-20
DE102004015017B4 DE102004015017B4 (de) 2006-11-16

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DE102004015017A Expired - Fee Related DE102004015017B4 (de) 2004-03-26 2004-03-26 Erzeugung von mechanischen und elektrischen Verbindungen zwischen den Oberflächen zweier Substrate

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2994935A1 (de) * 2013-07-05 2016-03-16 EV Group E. Thallner GmbH Verfahren zum bonden von metallischen kontaktflächen unter lösen einer auf einer der kontaktflächen aufgebrachten opferschicht in mindestens einer der kontaktflächen

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0238066A2 (de) * 1986-03-18 1987-09-23 Fujitsu Limited Verfahren zur Ausführung der Adhäsion zwischen Scheiben aus Silizium oder Siliziumdioxid
US5380598A (en) * 1992-03-05 1995-01-10 Westinghouse Brake & Signal Holdings Ltd. Solder joint
WO1997030474A1 (en) * 1996-02-13 1997-08-21 Northrop Grumman Corporation DIE ATTACHED SiC AND DIE ATTACH PROCEDURE FOR SiC
FR2798224A1 (fr) * 1999-09-08 2001-03-09 Commissariat Energie Atomique Realisation d'un collage electriquement conducteur entre deux elements semi-conducteurs.

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0238066A2 (de) * 1986-03-18 1987-09-23 Fujitsu Limited Verfahren zur Ausführung der Adhäsion zwischen Scheiben aus Silizium oder Siliziumdioxid
US5380598A (en) * 1992-03-05 1995-01-10 Westinghouse Brake & Signal Holdings Ltd. Solder joint
WO1997030474A1 (en) * 1996-02-13 1997-08-21 Northrop Grumman Corporation DIE ATTACHED SiC AND DIE ATTACH PROCEDURE FOR SiC
FR2798224A1 (fr) * 1999-09-08 2001-03-09 Commissariat Energie Atomique Realisation d'un collage electriquement conducteur entre deux elements semi-conducteurs.

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Mirza,A.R., Ayon, A.A.: Silicon wafer bonding for MEMS manufacturing. In: Solid State Technology, ISSN 0038-111X, August 1999, S.73-78 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2994935A1 (de) * 2013-07-05 2016-03-16 EV Group E. Thallner GmbH Verfahren zum bonden von metallischen kontaktflächen unter lösen einer auf einer der kontaktflächen aufgebrachten opferschicht in mindestens einer der kontaktflächen
EP3301706A1 (de) * 2013-07-05 2018-04-04 EV Group E. Thallner GmbH Verfahren zum bonden von teilweise metallischen kontaktflächen zweier substrate mittels mehrerer übereinander aufgebrachter opferschichten, bevorzugt einer festen opferschicht und einer flüssigen opferschicht
CN110310896A (zh) * 2013-07-05 2019-10-08 Ev 集团 E·索尔纳有限责任公司 用于接合基板的接触表面的方法
TWI775080B (zh) * 2013-07-05 2022-08-21 奧地利商Ev集團E塔那有限公司 用於接觸表面之接合之方法
CN110310896B (zh) * 2013-07-05 2023-08-15 Ev 集团 E·索尔纳有限责任公司 用于接合基板的接触表面的方法
TWI826971B (zh) * 2013-07-05 2023-12-21 奧地利商Ev集團E塔那有限公司 用於接觸表面之接合之方法

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