EP2989868A1 - Module de puissance, convertisseur et ensemble d'entraînement pourvu d'un module de puissance - Google Patents

Module de puissance, convertisseur et ensemble d'entraînement pourvu d'un module de puissance

Info

Publication number
EP2989868A1
EP2989868A1 EP14722569.2A EP14722569A EP2989868A1 EP 2989868 A1 EP2989868 A1 EP 2989868A1 EP 14722569 A EP14722569 A EP 14722569A EP 2989868 A1 EP2989868 A1 EP 2989868A1
Authority
EP
European Patent Office
Prior art keywords
busbar
power module
electrical
power
ssi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP14722569.2A
Other languages
German (de)
English (en)
Inventor
Hermann Bäumel
Edmund Schirmer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Conti Temic Microelectronic GmbH
Original Assignee
Conti Temic Microelectronic GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Conti Temic Microelectronic GmbH filed Critical Conti Temic Microelectronic GmbH
Publication of EP2989868A1 publication Critical patent/EP2989868A1/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02B—BOARDS, SUBSTATIONS OR SWITCHING ARRANGEMENTS FOR THE SUPPLY OR DISTRIBUTION OF ELECTRIC POWER
    • H02B1/00—Frameworks, boards, panels, desks, casings; Details of substations or switching arrangements
    • H02B1/20—Bus-bar or other wiring layouts, e.g. in cubicles, in switchyards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49537—Plurality of lead frames mounted in one device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/14—Mounting supporting structure in casing or on frame or rack
    • H05K7/1422—Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
    • H05K7/1427—Housings
    • H05K7/1432—Housings specially adapted for power drive units or power converters
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/14—Mounting supporting structure in casing or on frame or rack
    • H05K7/1422—Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
    • H05K7/1427—Housings
    • H05K7/1432—Housings specially adapted for power drive units or power converters
    • H05K7/14329—Housings specially adapted for power drive units or power converters specially adapted for the configuration of power bus bars
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
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    • H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/06181—On opposite sides of the body
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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Definitions

  • Power module Power converter and drive arrangement with a power module
  • the present invention relates to a power module for a power converter and a power converter with a said power module. Furthermore, the invention relates to a drive ⁇ arrangement for driving a vehicle with a said power module.
  • the power converter comprises a plurality of electro ⁇ African or electrical components such as semiconductor devices and electrical connections between the semiconductor devices. These components require a corresponding space in the power converter, which must be large enough to accommodate these components. A larger power converter in turn takes up a larger space in the vehicle, which is then no longer available for other vehicle parts.
  • the object of the present invention is therefore to provide a way to reduce the space of a power converter.
  • a power module which has a first bus bar and a first semiconductor component as well as a second semiconductor component.
  • the first semiconductor component has a planar design and comprises a first surface with a first electrical surface contact connection for producing a planar electrical connection to a first voltage potential.
  • the second semiconductor component has a planar design and in turn comprises a first surface with a first electrical surface contact connection for producing a planar electrical connection to the first voltage potential.
  • the electrical surface contact terminals of both the first and the second semiconductor component are in each case designed as an extended electrical contact.
  • the first busbar is formed from an electrically and preferably thermally conductive material and serves to forward the first voltage potential to the first and the second semiconductor component, wherein the first busbar comprises a first surface and a second, the The first surface opposite the first surface, wherein the first and the second surface are each formed as an extended surface ⁇ on the first surface of the first busbar, the first semiconductor device is arranged and via the first electrical surface contact terminal with the first surface of the first busbar electrically conductive, extensive flat and mechanically connected.
  • the second semiconductor component is arranged opposite to the second surface of the first busbar and preferably to the first semiconductor component.
  • the second semiconductor device with the first busbar is electrically conductive, extensive flat and mechanically connected.
  • these electrically conductive planar connections between the busbar and the two semiconductor components are preferably also heat-conducting. This is meant by an "extensive flat electrical connection" with an electrical connection, which is in particular bond wire free and thus not punctiform, but over an extended contact surface is flat.
  • the semiconductor devices are arranged directly on the busbar and supported by the busbar.
  • the semiconductor components are distributed on two opposite surfaces of the busbar and arranged opposite, so that electrical connection paths between the semiconductor devices are shortened.
  • the space in the power module is additionally reduced. In this way, a power module for a power converter is created, which in total takes up a smaller space than the semiconductor device.
  • a power converter can be provided, which takes up a small space in the vehicle.
  • the power module further comprises a second busbar for passing a second voltage potential, which is formed of an electrically and preferably thermally conductive material and having a first surface.
  • the first semiconductor component further comprises a second surface opposite the first surface with a second electrical surface contact terminal for producing a planar electrical connection to the second voltage potential.
  • the first semiconductor device via the second electrical surface-chenANDan gleich with the first surface of the second bus bar is electrically conductive, expanded area and me ⁇ mechanically connected.
  • the first and the second busbar are arranged on two mutually opposite surfaces of the first semiconductor component, a layered overlapping arrangement of the first and the second busbar with the first semiconductor component lying therebetween is realizable. Siert. Since, in addition, the two busbars each serve as an outgoing lead for a current flow to the first semiconductor component or as a return lead for a current flow from the first semiconductor component, the power module as a whole has a low parasitic coupling inductance in the two busbars.
  • At least one of the first and the second busbar to a first region, via which the at least one busbar with an elec ⁇ cal unit, such as an electrical line, electrically conductive, planar and mechanically connectable.
  • an elec ⁇ cal unit such as an electrical line, electrically conductive, planar and mechanically connectable.
  • the first bus bar has a second area, via which the first bus bar
  • This configuration allows the heat generated by Ver ⁇ loss services in the semiconductor components, is removed via the first bus bar to the cooling unit and thence around.
  • Flat design of the busbar and extensive flat thermal connections between the busbar and the semiconductor components or between the busbar and the cooling unit effect efficient cooling of the semiconductor components and thus of the power module.
  • a third busbar of an electrically and preferably thermally conductive material having a first surface for forwarding a third voltage potential.
  • the first semiconductor component has a third electrical surface contact connection on the second surface for producing an extensive planar electrical connection to the third voltage potential.
  • the first semiconductor device with the first surface of the third busbar is electrically and preferably thermally conductive, extensive flat and mechanically connected.
  • the power module has a fourth busbar made of an electrically and preferably also thermally conductive material having a first surface for forwarding the second voltage potential.
  • the second semiconductor component comprises a second surface opposite the first surface with a second electrical surface contact connection for producing a planar electrical connection to the second voltage potential.
  • the second semiconductor component via the second electrical surface contact connection with the first surface of the fourth busbar is electrically and preferably also thermally conductive, extensively flat and mechanically connected.
  • the second and the fourth busbar are integrally formed with each other.
  • this integrally formed busbar in the direction along and in particular parallel to the surfaces of the busbar considered a U- or Y-shaped cross-section.
  • Busbars can in the areas that form electrical connections to external circuit units, punching technology so be shaped so that all of these areas are on one level, which is advantageous for any further manufacturing processes.
  • the first semiconductor component is designed as a housing-free semiconductor switch, such as, for example, a metal-oxide-semiconductor field-effect transistor (MOSFET) switch or an IGBT switch (insulated-gate bipolar transistor).
  • MOSFET metal-oxide-semiconductor field-effect transistor
  • IGBT switch insulated-gate bipolar transistor
  • the second semiconductor device is designed as a housing-less semiconductor ⁇ diode.
  • a housing-less semiconductor device a so-called “naked” ⁇ semi-conductor device without embedding the housing ( "bar” in English) is formed as a bare chip.
  • the electrically conductive, extensive planar and mechanical connections between the busbars and the semiconductor devices are designed as flat solder joints, flat welded joints, flat adhesive joints or flat sintered joints.
  • a power converter for providing at least one phase current for an electric machine having a power module as described above.
  • the second and the fourth busbar of the power module for forwarding the phase current to the electrical machine are formed and electrically conductively connected to a winding of the electrical machine.
  • a drive arrangement for driving a vehicle, in particular a hybrid or electric vehicle is provided with an electric machine, wherein the drive arrangement comprises a power converter for providing at least one phase current for an electric machine, wherein the power converter is a top described power module comprises.
  • the second and the fourth busbar of the power module for forwarding the phase current to the electrical machine 0
  • processing module where transferable for the rest to the aforementioned power converter or to the aforementioned drive ⁇ arrangement, even as advantageous embodiments of the power converter or the drive assembly to look at.
  • exemplary embodiments of the invention will be with reference to the accompanying drawing, in which he ⁇ explained. Show it:
  • Figure 1 in a schematic circuit diagram a part of a
  • FIG. 2C, 2D in a schematic illustration two surfaces of a second semiconductor component of FIG.
  • Power module of the embodiment shown in Figure 1 In a schematic representation, the power module of the embodiment shown in FIG. 1 is a mechanical structure.
  • FIG. 1 a part of a drive assembly AA of a vehicle, not shown, is shown simplified in a schematic circuit diagram.
  • the drive arrangement AA comprises an electric machine EM for propulsion of the vehicle and a power converter SR for ready operation. provide electrical energy in the form of phase currents Ip for the electric machine EM.
  • the electric machine EM is designed in this embodiment as a synchronous machine and has three windings WK.
  • the three windings WK of the electric machine EM are each electrically connected to the power converter SR via a phase current line PL and receives the phase currents Ip via these three phase power lines PL from the power converter SR.
  • the power converter SR is formed in this embodiment as a B6 bridge circuit and comprises three substantially identically formed, arranged in a parallel circuit half-bridges HB between a positive power supply line SL1 and a negative power supply line SL2.
  • Each of the three half-bridges HB comprises in each case two power modules LM, each of which is connected to a positive-voltage-side current path (in English "high-side") and thus between the positive
  • the two power modules LM each ⁇ Weil half bridge HB are interconnected
  • the power converter SR may comprise other circuit components, such as DC link capacitors, which are required in a manner known to a person skilled in the art for a general function of the power converter, but for a description of the invention are not necessarily relevant and therefore will not be described in detail here.
  • the power modules LM each have a first power connection ASl and a second power connection AS2 for electrical Connection to the positive, the negative power supply line SL1, SL2 and the phase current lines PL on.
  • About the first power connection AS1 are in the positive
  • the power modules LM arranged in the negative current path are electrically connected via the first power connection AS1 to the respective second power connection AS2 of the power modules LM of the respective half bridge HB and the respective phase current line PL arranged in the positive current path. Via the second power connection AS2, the respective second power modules LM are electrically connected to the negative power supply line SL2.
  • the power modules LM of the three half-bridges HB are formed substantially identical to each other. Therefore, for clarity only one of the power modules LM is described in detail in ⁇ way of example nah Pharmaceuticald.
  • the power module LM respectively comprises a normally-conductive n-channel IGBT switch as a first semiconductor device Hl and a freewheeling diode as a second semiconductor device H2 in a parallel circuit.
  • the IGBT switch Hl comprises a collector terminal C, an emitter terminal E and a gate terminal G.
  • the collector terminal C is electrically connected to the first current terminal AS1 via a first electrical connection Vll.
  • the emitter terminal E is electrically connected to the second power connection AS2 via a second electrical connection V12.
  • the gate terminal G is electrically connected via a third electrical connection V13 to a signal terminal AS3, wherein via this signal terminal AS3 in each case a control signal at the Gatean gleich G for driving the IGBT switch Hl sensiblege ⁇ is.
  • the converter SR by alternately turning on and off the six IGBT switch Hl of the three semiconductor bridges HB by means of the control signals from a not shown in Figure electrical energy source via the power supply lines SL1, SL2 DC in a specialist known manner in three phase currents converts IP and feeds these phase currents IP via the three phase power lines PL in the windings WK of the electric machine EM for their operation.
  • the freewheeling diode H2 comprises a cathode terminal K and an anode terminal A.
  • the cathode terminal K is electrically connected via a first electrical connection V21 to the first electrical connection AS1.
  • the anode terminal A is electrically connected to the second power terminal AS2 via a second electrical connection V22.
  • the freewheeling diode H2 is used for discharging parasitic Indukti ⁇ onsströme from the electric machine EM to the power supply lines SL1, SL2, which arise during operation of the electric machine EM in the windings WK.
  • a mechanical structure of the power modules LM in particular the circuit arrangement of the IGBT switch Hl and the freewheeling diode H2 of the respective power modules LM and electrical connections between the IGBT switch Hl and the freewheeling diode H2 and to the respective first and second power connections AS1, AS2 and the control signal terminal AS3, will be described below with reference to Figures 2A, 2B, 2C, 2D and 3 in more detail.
  • FIG. 2B, 2C is made to Figures 2A, referred 2D, each having a top surface, that is a first surface Oll, and Un ⁇ underside, namely, a second surface 012, the IGBT switch Hl and a top side, that is a first surface 021 , and a Bottom, namely a second surface 022, the free ⁇ running diode H2 schematically represent in each plan view.
  • the IGBT switch Hl and the freewheeling diode H2 among other things to reduce the required installation space of the
  • Power converter SR designed as a housing-free "bare” semiconductor devices.
  • the IGBT switch H1 has on the first surface Oll a first electrical surface contact terminal KU, which forms the collector terminal C of the IGBT switch H1 shown in FIG.
  • the IGBT switch H1 On the second surface 012 lying opposite the first surface Oll, the IGBT switch H1, as shown in FIG. 2B, has a second electrical surface contact terminal K12 as the emitter terminal E shown in FIG. 1 and a third electrical surface contact terminal K13 as the one shown in FIG 1 gate terminal G on.
  • the free-wheeling diode H2 has-as can be seen in FIG. 2C-a first electrical surface contact terminal K21 on the first surface 021, which forms the cathode terminal K of the free-wheeling diode H2 shown in FIG.
  • the free-wheeling diode H2 - As shown in Figure 2D it clearly ⁇ - a second surface electrical contact terminal K22 as shown in Figure 1 the anode terminal A.
  • the surface contact terminals KU, K12, K13 or K21, K22 of the IGBT switch Hl and the freewheeling diode H2 are designed extensively flat so that they cover almost the entire surfaces Oll, 012 or 021, 022 of the IGBT switch Hl and the freewheeling diode H2.
  • FIG. 3 shows a mechanical structure of the power module LM together with a first cooling unit KE1 and a second cooling unit KE2 in a schematic Cross-sectional view perpendicular to the surface Oll des
  • IGBT switch Hl of the power module LM shows.
  • the power module LM is arranged between the first and the second cooling units KE1, KE2 and comprises a first, a second, a third and a fourth busbar SSI, SS2, SS3 and SS4 as well as an IGBT switch illustrated in FIGS. 2A and 2B Hl and one shown in Figures 2C and 2D freewheeling diode H2, which are arranged layer by layer overlying.
  • the first electrical connection V11 from the IGBT switch H1 to the first power connection AS1 and the first electrical connection V21 from the freewheeling diode H2 to the first power connection AS1 of the power module LM are realized by means of the first power rail SSI.
  • the first busbar SSI has a first surface 031 and a second surface 032 lying opposite the first surface 031.
  • the IGBT switch H1 is arranged with its first surface Oll facing the first busbar SSI.
  • the first surface contact terminal K21 that is to say the collector terminal C of the IGBT switch H1 is electrically and thermally conductively and mechanically connected to the first busbar SSI via a solder connection LV.
  • the freewheeling diode H2 On the second surface 032 of the first busbar SSI, the freewheeling diode H2, with its first surface 021, faces the first busbar SSI and is arranged opposite the IGBT switch Hl.
  • the first surface ⁇ contact terminal K21 and the cathode terminal K of the freewheeling diode H2 is also electrically and thermally conductively and mechanically connected via a solder joint LV with the first busbar SSI.
  • the first busbar SSI with a first surface 071 of the first cooling unit KE1 is thermally conductively and electrically insulating and mechanically connected via the central area SB12 by means of a dielectric heat conducting paste WP.
  • the end region SB11 of the first busbar forms the first current terminal AS1 of the power module LM, via which the first busbar SSI is electrically connected to the positive power supply line SL1 or one of the phase current line PL and via the first, applied to the positive power supply line SL1 voltage potential ⁇ 1 the respective first surface contact terminal KU, K21 of the IGBT switch Hl and the freewheeling diode H2 is applied.
  • the second busbar SS2 is disposed on the second surface 012 of the IGBT switch H1 and has a first surface 041 and a second surface 042 opposite the first surface 041. Via the first surface 041, the second busbar SS2 is electrically and thermally conductively and mechanically connected to the second surface contact terminal K12 and thus to the emitter terminal E of the IGBT switch H1 by means of a solder connection LV. Via the second surface 042, the second busbar SS2 with the second cooling unit KE2 by means of another dielectric jacketleitpaste WP thermally conductive but electrically insulating and mechanically connected.
  • the third busbar SS3 is likewise arranged on the second surface 012 of the IGBT switch H1 and has a first surface 051 and a second surface 052 facing the first surface 051.
  • the third busbar SS3 is likewise arranged on the second surface 012 of the IGBT switch H1 and has a first surface 051 and a second surface 052 facing the first surface 051.
  • the third busbar SS3 with the second cooling unit KE2 by means of a dielectric michleitpaste thermally conductive but electrically insulating and mechanically connected.
  • An exposed region of the third busbar SS3 not covered by the IGBT switch Hl is bent away from the second cooling unit KE2 and has an exposed end section which forms the signal terminal AS3 of the power module LM to which the control signal for driving the IGBT switch ters Hl is created.
  • the fourth busbar SS4 is arranged on the second surface 022 of the freewheeling diode H2 and has a first surface 061 and a second surface 062 lying opposite the first surface 061.
  • the fourth power rail SS4 over the first surface 061 to the second surface contact connection K22 or the anode terminal A of the free-wheeling diode ⁇ H2 by means of a solder joint LV electrically and thermally conductive and mechanically connected.
  • the second and fourth busbar SS2, SS4 are pushed towards each other moving and each have an end portion SB21, SB41, which are electrically connected to each other via a solder joint LV and thus form a common end region.
  • This common end region forms the second current terminal of the power AS2 ⁇ module LM from over which the second and the fourth current rail SS2, SS4 are electrically connected to a phase of the power lines PL or the negative power source line SL2.
  • the second and the fourth busbar SS2, SS4 may be integrally formed.
  • the first cooling unit KE1 is arranged on the fourth busbar SS4 and is thermally conductively but electrically insulating and mechanically connected to the second surface 062 of the fourth busbar SS4 via a first surface 071 and by means of, for example, a further thermal compound WP.
  • the first cooling unit KE1 is provided with surface-enlarging cooling ribs KR on a second surface 072 lying opposite the first surface 071, which can dissipate the heat absorbed by the power module LM more efficiently into the environment.
  • the second cooling unit KE2 is arranged on the second and the third busbar SS2, SS3 and with the second surface 042 of the second busbar SS2 and the second surface 052 of the third busbar SS3 via a first surface 081 and by means of, for example, another thermal paste WP thermally conductive but electrically insulating and mechanically connected.
  • the second cooling unit KE2 has on a second, the first surface 081 opposite surface 082 devisflä ⁇ chenver sparnde cooling fins KR, which can dissipate the heat absorbed by the power module LM heat more efficiently in the environment.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Inverter Devices (AREA)

Abstract

L'invention concerne un module de puissance (LM) pour un convertisseur (SR), lequel comprend : -une première barre conductrice (SS1) pourvue d'une première surface (O31) et d'une deuxième surface (O32) opposée à la première surface (O31) ; -un premier composant à semi-conducteur (H1) sur la première surface (O31) de la première barre conductrice (SS1), lequel présente une première surface (O11) pourvue d'une première borne de contact de surface électrique (K11), et lequel est relié de manière électroconductrice, à plat et mécaniquement à la première surface (O31) de la première barre conductrice (SS1) par l'intermédiaire de la première borne de contact de surface (K11) ; et -un deuxième composant à semi-conducteur (H2) sur la deuxième surface (O32) de la première barre conductrice (SS1), lequel présente une première surface (O21) pourvue d'une première borne de contact de surface électrique (K21), et lequel est relié de manière électroconductrice, à plat et mécaniquement à la deuxième surface (O32) de la première barre conductrice (SS1) par l'intermédiaire de la première borne de contact de surface (K21) du deuxième composant à semi-conducteur (H2).
EP14722569.2A 2013-04-25 2014-04-17 Module de puissance, convertisseur et ensemble d'entraînement pourvu d'un module de puissance Ceased EP2989868A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102013207507.3A DE102013207507B3 (de) 2013-04-25 2013-04-25 Leistungsmodul, Stromrichter und Antriebsanordnung mit einem Leistungsmodul
PCT/EP2014/057875 WO2014173801A1 (fr) 2013-04-25 2014-04-17 Module de puissance, convertisseur et ensemble d'entraînement pourvu d'un module de puissance

Publications (1)

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EP2989868A1 true EP2989868A1 (fr) 2016-03-02

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EP14722569.2A Ceased EP2989868A1 (fr) 2013-04-25 2014-04-17 Module de puissance, convertisseur et ensemble d'entraînement pourvu d'un module de puissance

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US (1) US10027094B2 (fr)
EP (1) EP2989868A1 (fr)
JP (1) JP2016523069A (fr)
CN (1) CN105325066A (fr)
DE (1) DE102013207507B3 (fr)
WO (1) WO2014173801A1 (fr)

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DE102013207507B3 (de) 2013-04-25 2014-07-24 Conti Temic Microelectronic Gmbh Leistungsmodul, Stromrichter und Antriebsanordnung mit einem Leistungsmodul
DE102015113503A1 (de) 2015-08-14 2017-02-16 Schweizer Electronic Ag Elektronisches Schaltelement und modular aufgebauter Stromrichter
CN108631610A (zh) * 2017-03-20 2018-10-09 上海骐宏电驱动科技有限公司 堆栈式逆变器
FR3074011B1 (fr) * 2017-11-21 2019-12-20 Safran Electronics & Defense Module electrique de puissance
DE102018104972B4 (de) 2018-03-05 2022-06-23 Schweizer Electronic Ag Leiterplattenelement mit integriertem elektronischen Schaltelement, Stromrichter und Verfahren zum Herstellen eines Leiterplattenelements
US20200168533A1 (en) * 2018-11-26 2020-05-28 Texas Instruments Incorporated Multi-die package with multiple heat channels
EP3739624A1 (fr) * 2019-05-13 2020-11-18 Infineon Technologies Austria AG Agencement à semi-conducteur avec un élément de contact compressible encapsulé entre deux substrats porteurs et procédé de fabrication correspondant
US11967899B2 (en) 2020-05-22 2024-04-23 Marel Power Solutions Fluid cooled inverter

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JP4140238B2 (ja) * 2001-12-26 2008-08-27 トヨタ自動車株式会社 半導体モジュールの接合構造
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Also Published As

Publication number Publication date
US20160105004A1 (en) 2016-04-14
WO2014173801A1 (fr) 2014-10-30
JP2016523069A (ja) 2016-08-04
CN105325066A (zh) 2016-02-10
US10027094B2 (en) 2018-07-17
DE102013207507B3 (de) 2014-07-24

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