EP2945908A1 - Verfahren zur abscheidung von polykristallinem silicium - Google Patents

Verfahren zur abscheidung von polykristallinem silicium

Info

Publication number
EP2945908A1
EP2945908A1 EP14700836.1A EP14700836A EP2945908A1 EP 2945908 A1 EP2945908 A1 EP 2945908A1 EP 14700836 A EP14700836 A EP 14700836A EP 2945908 A1 EP2945908 A1 EP 2945908A1
Authority
EP
European Patent Office
Prior art keywords
reactor
deposition
opened
medium
bell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP14700836.1A
Other languages
German (de)
English (en)
French (fr)
Inventor
Barbara MÜLLER
Thomas Koch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wacker Chemie AG
Original Assignee
Wacker Chemie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemie AG filed Critical Wacker Chemie AG
Publication of EP2945908A1 publication Critical patent/EP2945908A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
EP14700836.1A 2013-01-17 2014-01-13 Verfahren zur abscheidung von polykristallinem silicium Withdrawn EP2945908A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102013200660.8A DE102013200660A1 (de) 2013-01-17 2013-01-17 Verfahren zur Abscheidung von polykristallinem Silicium
PCT/EP2014/050437 WO2014111326A1 (de) 2013-01-17 2014-01-13 Verfahren zur abscheidung von polykristallinem silicium

Publications (1)

Publication Number Publication Date
EP2945908A1 true EP2945908A1 (de) 2015-11-25

Family

ID=49998238

Family Applications (1)

Application Number Title Priority Date Filing Date
EP14700836.1A Withdrawn EP2945908A1 (de) 2013-01-17 2014-01-13 Verfahren zur abscheidung von polykristallinem silicium

Country Status (10)

Country Link
US (1) US9620359B2 (ja)
EP (1) EP2945908A1 (ja)
JP (1) JP6046269B2 (ja)
KR (1) KR101731410B1 (ja)
CN (1) CN104918883B (ja)
DE (1) DE102013200660A1 (ja)
MY (1) MY170523A (ja)
SA (1) SA515360699B1 (ja)
TW (1) TWI505988B (ja)
WO (1) WO2014111326A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MX2018008784A (es) 2016-02-10 2018-09-12 Yoshino Gypsum Co Aparato para producir material de tablero a base de yeso.
KR20190011291A (ko) * 2016-12-14 2019-02-01 와커 헤미 아게 다결정질 실리콘의 제조 방법
CN112105584A (zh) * 2018-12-17 2020-12-18 瓦克化学股份公司 用于制备多晶硅的方法
JP7217720B2 (ja) * 2020-03-10 2023-02-03 信越化学工業株式会社 ベースプレートの汚染防止方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2105409A1 (en) * 2008-03-28 2009-09-30 Mitsubishi Materials Corporation Polymer inactivation method for polycrystalline silicon manufacturing device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3491720A (en) * 1965-07-29 1970-01-27 Monsanto Co Epitaxial deposition reactor
DE2558387A1 (de) 1974-12-26 1976-07-08 Monsanto Co Verfahren und vorrichtung zur herstellung von polykristallinem silicium
JPS56114815A (en) 1980-02-08 1981-09-09 Koujiyundo Silicon Kk Preliminary washing method of reaction furnace for preparing polycrystalline silicon
DE102006037020A1 (de) * 2006-08-08 2008-02-14 Wacker Chemie Ag Verfahren und Vorrichtung zur Herstellung von hochreinem polykristallinem Silicium mit reduziertem Dotierstoffgehalt
US8449940B2 (en) * 2007-04-25 2013-05-28 Kagan Ceran Deposition of high-purity silicon via high-surface area gas-solid interfaces and recovery via liquid phase
JP5509578B2 (ja) 2007-11-28 2014-06-04 三菱マテリアル株式会社 多結晶シリコン製造装置及び製造方法
US8399072B2 (en) * 2009-04-24 2013-03-19 Savi Research, Inc. Process for improved chemcial vapor deposition of polysilicon
JP5308288B2 (ja) 2009-09-14 2013-10-09 信越化学工業株式会社 多結晶シリコン製造用反応炉、多結晶シリコン製造システム、および多結晶シリコンの製造方法
DE102010042869A1 (de) 2010-10-25 2012-04-26 Wacker Chemie Ag Verfahren zur Herstellung von polykristallinen Siliciumstäben
DE102011089449A1 (de) * 2011-12-21 2013-06-27 Wacker Chemie Ag Polykristalliner Siliciumstab und Verfahren zur Herstellung von Polysilicium

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2105409A1 (en) * 2008-03-28 2009-09-30 Mitsubishi Materials Corporation Polymer inactivation method for polycrystalline silicon manufacturing device

Also Published As

Publication number Publication date
CN104918883B (zh) 2017-06-16
KR20150093209A (ko) 2015-08-17
CN104918883A (zh) 2015-09-16
TW201429869A (zh) 2014-08-01
KR101731410B1 (ko) 2017-04-28
SA515360699B1 (ar) 2018-02-26
WO2014111326A1 (de) 2014-07-24
TWI505988B (zh) 2015-11-01
US20150364323A1 (en) 2015-12-17
JP2016506357A (ja) 2016-03-03
JP6046269B2 (ja) 2016-12-14
DE102013200660A1 (de) 2014-07-17
MY170523A (en) 2019-08-09
US9620359B2 (en) 2017-04-11

Similar Documents

Publication Publication Date Title
EP1775263B1 (de) Verfahren und Vorrichtung zur Hydrierung von Chlorsilanen
EP2620411B1 (de) Dotierstoffarmes polykristallines Siliciumstück
EP2551239B1 (de) Verfahren zur Produktion von Polysilicium
EP2426085B1 (de) Verfahren zur Herstellung von polykristallinem Silicium
EP2444373A1 (de) Verfahren zur Herstellung von polykristallinen Siliciumstäben
WO2014111326A1 (de) Verfahren zur abscheidung von polykristallinem silicium
DE3390374T1 (de) Verfahren und Einrichtung zur Erzeugung von Silizium aus Fluorkieselsäure
DE102006037020A1 (de) Verfahren und Vorrichtung zur Herstellung von hochreinem polykristallinem Silicium mit reduziertem Dotierstoffgehalt
EP2558232B1 (de) Herstellung von monokristallinen halbleiterwerkstoffen
DE102011077455B4 (de) Verfahren zur Bestimmung von Verunreinigungen in Silicium und Reaktor zur Abscheidung von polykristallinem Silicium
DE102011089479A1 (de) Polykristallines Silicium
EP2794477B1 (de) Polykristalliner siliciumstab und verfahren zur herstellung von polysilicium
EP2719663B1 (de) Verfahren zur abscheidung von polykristallinem silizium
EP1400490B1 (de) Abscheidung eines Feststoffs durch thermische Zersetzung einer gasförmigen Substanz in einem Becherreaktor
EP1339638B1 (de) Verfahren zur herstellung von hochreinem, granularem silizium
WO2015113894A1 (de) Verfahren zur herstellung von polykristallinem silicium
EP3554999B1 (de) Verfahren zur herstellung von polykristallinem silicium
DE112009003720T5 (de) Verfahren zur Herstellung von Silicium
DE102010015354A1 (de) Herstellung eines kristallinen Halbleiterwerkstoffs
WO2014118019A1 (de) Verfahren zur abscheidung von polykristallinem silicium

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20150715

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

DAX Request for extension of the european patent (deleted)
17Q First examination report despatched

Effective date: 20170531

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 21/02 20060101ALI20190715BHEP

Ipc: C01B 33/035 20060101AFI20190715BHEP

INTG Intention to grant announced

Effective date: 20190730

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20191210