Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02367—Substrates
  • H01L21/0237—Materials
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/772—Field effect transistors
  • H01L29/78—Field effect transistors with field effect produced by an insulated gate
  • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
  • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02436—Intermediate layers between substrates and deposited layers
  • H01L21/02439—Materials
  • H01L21/02469—Group 12/16 materials
  • H01L21/02472—Oxides
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02436—Intermediate layers between substrates and deposited layers
  • H01L21/02439—Materials
  • H01L21/02483—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02436—Intermediate layers between substrates and deposited layers
  • H01L21/02494—Structure
  • H01L21/02496—Layer structure
  • H01L21/02505—Layer structure consisting of more than two layers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/02521—Materials
  • H01L21/02551—Group 12/16 materials
  • H01L21/02554—Oxides
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/02521—Materials
  • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02612—Formation types
  • H01L21/02617—Deposition types
  • H01L21/02623—Liquid deposition
  • H01L21/02628—Liquid deposition using solutions
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02656—Special treatments
  • H01L21/02664—Aftertreatments
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/66007—Multistep manufacturing processes
  • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials

Definitions

• the invention relates to a method for producing electrically semiconductive or conductive metal oxide layers with improved conductivity, which are particularly suitable for the production of flexible thin-film transistors, to metal oxide layers produced therewith and to their use for the production of electronic components.
• the metal oxides for the production process must be in printable, that is to say dissolved or at least pasty, form.
• WO 2009/010142 A2 proposes a functional material for electronic components which comprises an organometallic zinc complex which contains at least one ligand from the class of Oximate and is alkaline and erdalkaliok. From this material, non-porous zinc oxide layers are obtained, whichever is more concrete
• Composition may have electrically insulating or semiconductive or conductive properties and are suitable for the production of printed electronic components.
• WO 2010/078907 A1 discloses a functional material for electronic components which contains organometallic complexes of aluminum, gallium, neodymium, ruthenium, magnesium, hafnium, zirconium, indium and / or tin, which likewise contain at least one ligand from the class of oximes contain.
• the desired layer thickness can also be determined after one
• the subsequent conversion step into the corresponding metal oxides produces a uniform metal oxide layer with a predetermined thickness and the material properties which are inevitably determined by the type of material and the thickness.
• the object of the invention is therefore to provide a process for the preparation of electrically semiconductive or conductive metal oxide layers from precursor compounds which are suitable for use in coating processes, which leads to metal oxide layers which are present in
• Composition and layer thickness can be made variable and with respect to their charge carrier mobility and electrical conductivity better values than the metal oxide layers available with the methods of the prior art, in particular for use in printable electronic components.
• Another object of the present invention is to provide the improved metal oxide layers obtainable by said process.
• an object of the invention is to demonstrate the use of the metal oxide layers thus produced.
• Metal oxide layers of organometallic precursor compounds can be solved without the surface properties of the generated
• the object of the invention is therefore achieved by a process for producing electrically semiconductive or conductive metal oxide layers, wherein a metal oxide precursor solution or dispersion containing one or more organometallic compounds,
• metal oxide precursor layer c) thermally, by means of a treatment with UV and / or IR radiation, or by a combination of two or more of them into one
• steps a) to d) are carried out at least twice successively on the same position of the substrate, wherein a multi-layer of metal oxides is produced.
• the object of the invention is also achieved by electrically semiconductive or conductive multi-layer layers of metal oxides, which are produced by the above-mentioned inventive method.
• the object of the invention is also achieved by the use of the inventively prepared electrically semiconductive or conductive multilayer coatings of metal oxides for the production of electronic components, in particular for the production of field effect transistors (FETs), preferably printable thin film transistors (TFTs).
• FETs field effect transistors
• TFTs thin film transistors
• the production of electrically semiconductive or conductive metal oxide layers takes place from their organometallic compounds dissolved in solvents or dispersed in liquid dispersants
• Precursor compounds i. from metal oxide precursor solutions or metal oxide precursor dispersions, which are comparatively easy to
• Coating compositions or printing inks can be processed, which are used in the conventional coating and printing processes for mass production.
• organometallic precursor compounds of semiconducting or conductive metal oxides ie, those organometallic compounds which are formed on subsequent treatment, which takes place thermally and / or by actinic radiation (UV and / or IR), into volatile components such as carbon dioxide , Acetone, etc., as well as decompose into the desired metal oxides
• the at least one ligand is a 2- (methoxyimino) alkanoate, a 2- (ethoxyimino) alkanoate or a 2- (hydroxyimino) alkanoate, which are also referred to below as oximes.
• These ligands are obtained by condensation of alpha-keto acids or oxocarboxylic acids with hydroxylamines or
• ligand is an enolate, in particular
• Acetylacetonate which is used as in the form of acetylacetonate complexes of various metals for other technical purposes and therefore commercially available.
• all the ligands of the metal-carboxylate complexes used according to the invention are alkoxyiminocarboxylic acid Ligands, in particular to those mentioned above, or are complexes in which the Alkoxyiminocarbonklare ligands are only additionally complexed with H 2 O, but otherwise no further ligands are contained in the metal-carboxylate complex.
• metal acetylacetonates are preferably complexes which likewise contain no further ligands other than acetylacetonate.
• the metal oxide precursors are formed, i. the aluminum, magnesium, gallium, neodymium, ruthenium, hafnium, zirconium, indium, zinc, titanium and / or tin complexes at room temperature by reacting an oxocarboxylic acid with at least one hydroxyl or alkylhydroxylamine in the presence of a Base, such as
• Tetraethylammonium bicarbonate or sodium bicarbonate followed by the addition of an inorganic aluminum, magnesium, gallium, neodymium, ruthenium, hafnium, zirconium, indium, zinc, titanium and / or tin salt, e.g. Aluminum nitrate nonahydrate,
• anhydrous indium chloride and / or stannous chloride pentahydrate may be present in the presence of at least one
• Magnesium, hafnium or zirconium such as hydromagnesite Mg 5 (CO 3 ) 4 (OH) 2 , 4H 2 O.
• hydromagnesite Mg 5 (CO 3 ) 4 (OH) 2 , 4H 2 O As oxocarboxylic acid all representatives of this class of compounds can be used. However, preference is given to oxoacetic acid,
• Oxopropionic acid or oxobutyric acid used.
• Precursors are used according to the invention preferably in dissolved or dispersed form.
• they are dissolved in suitable solvents, which have to be adjusted in each case to the coating process to be used and to the number and composition of the metal oxide precursor layers to be applied, in suitable solvents or dispersed in suitable dispersants.
• Suitable solvents or dispersants are water and / or organic solvents, for example alcohols, carboxylic acids, esters, ethers, aldehydes, ketones, amines, amides or aromatics. It is also possible to use mixtures of several organic solvents or dispersants or mixtures of water with organic solvents or dispersants.
• Alkoxyiminocarboxylic acid ligands are preferably dissolved in 2-methoxyethanol or tetrahydrofuran.
• Concentrations in the range from 0.01 to 70% by weight, based on the weight of the solution or dispersion, are considered suitable concentrations in the sense of the invention for a solution or dispersion in one of the abovementioned solvents or dispersants. These are, as described above, in each case based on the conditions specified by the selected coating process conditions, on the viscosity of the solvents or dispersants and on the number and composition of the metal oxide layers to be produced in the inventive
• Metal oxide multilayer coating matched.
• the principle is that it is advantageous, when using the same solvent and thus the same viscosity, to reduce the concentration of metal oxide precursor material used for each individual application step with increasing number of metal oxide layers.
• the concentration of metal oxide precursor material used for each individual application step with increasing number of metal oxide layers.
• the total achievable charge carrier mobility increases with the application of IZO layers with an increasing number of layers and a simultaneously decreasing concentration.
• the highest achievable charge carrier mobility at a concentration of 3 wt .-% is reached from 3 layers (about 9 cm 2 / Vs), while in a 0.6 wt .-% precursor solution only from 10
• the metal oxide precursor solution or dispersion is first applied to the respective substrate as a single layer to yield a metal oxide precursor layer, which is then optionally dried and subsequently dried by appropriate means, i. thermally and / or by means of actinic radiation (treatment with UV and / or IR radiation) is converted into a metal oxide layer, wherein any
• the conversion of the precursors into metal oxides preferably takes place by means of thermal treatment.
• the thermal treatment is included Temperatures in the range of 50 ° C to 700 ° C performed.
• the temperatures used are in the range of 150 ° C to 600 ° C, in particular from 180 ° C to 500 ° C.
• the temperature treatment takes place in air or under inert gas.
• the actually used temperature is determined by the type of materials used.
• the temperature is between 200 and 500 ° C.
• the thermal conversion of indium, gallium and zinc oxime complex precursors into an indium-gallium-zinc oxide layer with semiconductive properties likewise takes place at a temperature of> 150 ° C.
• the temperature is between 200 and 500 ° C.
• the thermal conversion of zinc and tin Oximatkomplex- precursors in a zinc-tin oxide layer having semiconducting properties is carried out at a temperature of 150 ° C, preferably between 180 and 520 ° C.
• a cooling of the pre-coated and thermally treated substrate can then take place before the next coating step.
• UV irradiation In addition or as an alternative to the thermal treatment, it is also possible to irradiate with actinic radiation, ie with UV and / or IR radiation.
• actinic radiation ie with UV and / or IR radiation.
• wavelengths ⁇ 400 nm preferably in the range of 150 to 380 nm, are used.
• IR radiation can be used with wavelengths of> 800 nm, preferably from> 800 to 3000 nm.
• This treatment also causes the metal organism to decompose. nical precursors and release volatile organic constituents and optionally water, so that a metal oxide layer remains on the substrate.
• metal-carboxylate complexes with alkoxyiminocarboxylic acid ligands, a homogeneous metal oxide layer with uniform thickness, low porosity, homogeneous composition and morphology with at the same time evenly planar and nonporous layer surface.
• metal oxide precursor solution or dispersion and the method for the implementation of the metal oxide precursor layer in a
• Metal oxide layer the resulting metal oxide layer may be crystalline, nanocrystalline or amorphous.
• the described application and transfer step is carried out at least twice in succession on the same location of the substrate to form a multilayer of metal oxides.
• metal oxide layers are applied to one another as a multilayer coating on the substrate.
• each layer is applied individually and converted into the corresponding metal oxide or mixed metal oxide before the next metal oxide precursor layer is applied and in turn converted into the corresponding metal oxide or mixed oxide. In this way, a layer-by-layer growth of the resulting multilayer metal oxide layer takes place.
• the very thin, resulting from the process according to the invention but very homogeneous individual metal oxide layers and the interfaces between the respective metal oxide or mixed metal oxide layers have a significant impact on the charge carrier mobility within the resulting metal oxide layer composite and thus on their conductivity, even if obtained by means of the inventive method in equal material for each individual layer, a total layer thickness of the multilayer which is equal to the layer thickness of a single layer produced in a single process step according to the prior art.
• the method according to the invention also leads to increased charge carrier mobility and thus improved electrical conductivity of the resulting multilayer coating, even if the material and layer thickness are otherwise identical.
• the material composition of the individual layers is variable.
• the multi-layer layer produced according to the invention consists of at least two metal oxide layers, wherein the first metal oxide layer is a
• composition which may be the same or different than the composition of any other metal oxide layer. It can therefore several identical, several different or even several identical
• Metal oxide layers may be included in combination with one or more different metal oxide layers in the metal oxide multilayer.
• each individual layer consists either of an oxide of a single metal or of a mixed oxide of at least two to at most 5 elements selected from the metals mentioned.
• the mixing ratio of the individual metal elements in the mixed oxide can be varied as needed.
• the proportion of a second and each further metal element is at least 0.01% by weight, based on the total mass of the mixed oxide.
• metal oxides in the context of the present invention are oxides and mixed oxides of aluminum, magnesium, gallium, neodymium, ruthenium, Hafnium, zirconium, indium, zinc, titanium, and / or tin.
• ZnO doped zinc oxides
• the mixed oxides ITO (indium tin oxide), IZO (indium zinc oxide), ZTO (zinc tin oxide), IGZO (indium gallium zinc oxide) but also indium-zinc oxide, which is additionally doped with Hf, Mg, Zr, Ti or Ga (Hf-IZO, Mg-IZO, Zr-IZO, Ti-IZO and Ga-IZO) and dopants or mixtures of the above Oxides or mixed oxides with the other metals mentioned above, for example with neodymium.
• At least one layer of the metal oxide multilayer layer produced according to the invention consists of a mixed oxide or doped metal oxide of two or more of the elements selected from the group of the metals aluminum, magnesium, gallium, neodymium,
• the metal oxide multilayer coating it is also possible for all the layers of the metal oxide multilayer coating to consist of the abovementioned mixed oxides or doped metal oxides, it being possible for the composition to change from layer to layer.
• the metal oxide multilayer layer produced according to the method according to the invention is very variably adjustable in terms of its material composition, which at the same time also has an effect on a precise
• Adjustability of the electrically conductive properties of the multilayer has.
• the achievable layer thickness can also be variably adjusted, specifically via the concentration of the precursor solution or dispersion to be applied, the viscosity of the precursor solution or dispersion used, and the technical parameters of the chosen application method. If, for example, a spin coating method is selected, these include the rotation speed and duration.
• the thickness of the individual layers varies from a layer thickness which is only a single atomic layer, up to a layer thickness of 500 nm, depending on the Number of layers and materials chosen.
• the thickness of the individual layers is preferably 1 nm to 50 nm.
• the thickness of the first layer may be the same or different than the layer thickness of any other metal oxide layer in the metal oxide multilayer layer produced according to the invention. It goes without saying that several layers of the same thickness can be present next to a layer of different thicknesses, and vice versa. As well as the choice of material for the individual layers, their respective layer thickness also contributes to the precise adjustability of the electrically conductive properties of the metal oxide multilayer coating.
• the application of the individual metal oxide precursor layers for the metal oxide multilayer coating to a substrate according to the method according to the invention can be carried out by means of various known coating and printing methods.
• Particularly suitable for this purpose are a spun-coating process, a blade coating process, a wirecoating process or a spray coating process, or conventional printing processes such as inkjet printing, flexographic printing, offset printing, slot casting and screen printing.
• Particularly preferred are the spin coating process and the inkjet process.
• Suitable substrates are solid substrates such as glass, ceramic, metal or plastic, but in particular also flexible substrates such as plastic films or metal foils.
• TFTs thin-film transistors
• FETs Field effect transistors
• a dielectric-coated conductive layer the so-called “gate”, on which metal electrodes ("source” and “drain”, preferably of gold) are located
• the substrate to be directly coated with a semiconductive layer in this case consists of a layer structure, to which Surface both a dielectric material (preferably S1O2) and the metal electrodes are located.
• the present invention also provides an electrically semiconductive or conductive multi-layer layer of metal oxides, which is produced by the process according to the invention.
• metal oxide multilayer film of the present invention includes pure metal oxides, mixed metal oxides, and doped metal oxides and doped mixed metal oxides.
• the present invention also provides for the use of the above-described electrically semiconductive or conductive multi-layer layer of metal oxides for producing electronic components, in particular for producing semiconductive or conductive functional layers for these components.
• field-effect transistors such as the thin-film transistors (TFTs) preferably used, come into consideration as electronic components.
• field effect transistor is a group of transistors
• MOSFET Metal Oxide Semiconductor FET
• the FET has three connections:
• the MOSFET also has a fourth connection bulk (substrate). This is already connected internally to the source connection for individual transistors and not connected separately.
• FET generally comprises the following types of field-effect transistors:
• JFET junction field effect transistor
• MOSFET Metal oxide semiconductor FET
• HEMT High Electron Mobility Transistor
• ISFET Ion Sensitive Field Effect Transistor
• TFT thin-film transistor
• Preferred according to the invention is the TFT, with which large-area electronic circuits can be produced.
• the aforementioned electronic components are preferably a field-effect transistor or thin-film transistor which is constructed from a conductive layer (gate), an insulating layer, a semiconductor and electrodes (drain and source).
• the gate preferably consists of a highly n-doped silicon wafer, a highly n-doped silicon thin film, conductive polymers (eg polypyrrolepolyaminobenzenesulfonic acid or polyethylenedioxythiophene-polystyrenesulfonic acid (PEDOT-PSS)), conductive ceramics (eg indium-tin-oxide (ITO) or Al, Ga or In-doped tin oxide (AZO, GZO, IZO) and F or Sb doped tin oxide (FTO, ATO)) or metals (eg gold, silver, titanium, zinc), depending on the design as a thin layer or substrate material.
• conductive polymers eg polypyrrolepolyaminobenzenesulf
• the thin layers may be applied in the arrangement below (bottom gate) or above (top gate) the semiconducting or insulating layer.
• the electronic component preferably has an insulating layer which consists of polymers (for example poly (4-vinylphenol), polymethyl methacrylate, polystyrene, polyimides or polycarbonate) or ceramics (for example silicon dioxide, silicon nitride, aluminum oxide, gallium oxide, neodymium oxide, magnesium oxide, hafnium oxide, zirconium oxide).
• the electronic component preferably has a semiconductive layer which consists of a multilayer coating of metal oxides prepared by the process according to the invention.
• the conductive layer can also be a multi-layer layer of metal oxides, which are prepared with the aid of the invention
• source and drain electrodes which are preferably made of a highly n-doped silicon thin film of conductive polymers (e.g.
• PEDOT-PSS Polypyrrole-polyaminobenzenesulfonic acid or Polyethylendioxythiophen- polystyrenesulfonic acid
• conductive ceramics eg indium-tin-oxide (ITO) or Al, Ga or In-doped tin oxide (AZO, GZO, IZO) and F or Sb doped tin oxide (FTO , ATO)
• metals eg gold, silver, titanium, zinc.
• the electrodes (according to the invention preferably designed as thin layers) can be applied depending on the design in the arrangement below (bottom contact) or above (top contact) of the semiconducting or the insulating layer.
• non-conductive substrate for these electronic components here also solid substrates such as glass, ceramic, metal or plastics, but in particular flexible substrates such as plastic films and metal foils into consideration.
• the inventive method for producing electrically semiconductive and conductive layers leads to a semiconducting or conductive multi-layer of metal oxides, both in material
• composition as well as in terms of the adjustable layer thicknesses is very variable and thus allows a targeted adjustment of the desired properties in terms of electrical conductivity.
• semiconductive or conductive metal oxide layers can be produced which have an increased electrical conductivity and increased charge carrier mobility with the same material and the same thickness, compared to single layers produced by known single-layer methods of the prior art.
• the number of defects in the individual layers and thus also in the overall layer decreases, and the surface quality of the overall layer is markedly smoother than when applying individual layers, which in turn has a positive effect on the conductive or semiconducting properties of the resulting electronic
• the inventive method thus enables in a simple and cost-effective manner, the mass production of very effective electronic components, in particular of TFTs.
• the electrical conductivity can be determined by means of a four-probe DC method. This measuring method is described in DIN 50431 or ASTM F43-99.
• the characterization and determination of characteristics of semiconducting materials, in particular also the charge carrier mobility ⁇ , can be carried out by means of the measurement and evaluation methods described in IEEE 1620.
• This mixture will last for about 5 minutes Ultrasonic bath homogeneously mixed. If necessary, then a filtration (20 ⁇ pore size) take place.
• a semiconducting IZO layer is subsequently applied to the substrate prepared in this way, the following process being carried out once:
• the electrical transport measurement is carried out with the aid of an Agilent B 1500 A and is shown in FIGS. 1 and 2.
• the effective charge carrier mobility of the obtained transistor is 0.9 cm 2 / Vs.
• the effective charge carrier mobility ⁇ is determined from the transfer curve 1b using the relation
• Example 1 Analogously to Example 1, x% by weight of IZO precursor solutions are prepared, where x is the values 0.01; 0.10; 1, 0; 3.0; 5.0; 10 and 15 has.
• the substrates prepared as in Example 1 are prepared by repeatedly carrying out the process steps set forth in Example 1 with IZO- Coated precursor solutions and transferred successively in an IZO multilayer coating.
• the electrical transport measurements and the calculation of the effective charge carrier mobility ⁇ are analogous to Example 1 on four identical transistors on the same substrate.
• FIG. 2 shows the effective charge carrier mobility for the application of 2, 3 and 5 layers of different concentration in comparison to the IZO single layer according to Example 1.
• the total thickness of the IZO films is 25 nm (monolayer), 37 nm (double layer), 20 nm (trilayer layer), 25 nm (five-layer layer).
• the effective charge carrier mobility ⁇ increases as the number of metal oxide layers or interfaces increases.
• the further course of the method is analogous to Example 1.
• Example 5 Preparation of a Metal Oxide TFT with a Three-Layer Semiconductor Layer of an IZO and an IGZO (Indium-Gallium-Zinc-Oxide) Precursor Solution
• This precursor solution is applied to the precoated SiO 2 substrate in a single layer analogously to the method described in Example 1. Then another
• Example 6 Printing multilayer semiconductor layers to increase the charge carrier mobility of TFTs
• An SiO 2 / Si TFT substrate is cleaned as described in Example 1.
• the finished precursor mixture is introduced into a cartridge of an ink jet printer of the type Dimatix DMP-2831 filled.
• the areas of the substrate on which the prestructured channels of the transistor are located are now printed at room temperature (drop size approx. 10 pL, beam frequency 1 kHz)
• a single IZO layer is made as follows:
• the transfer curves and the effective charge carrier mobility are shown in FIG.
• the dimensions of the TFTs correspond to those of Examples 1 and 2.
• the section plots the four-transistor average effective charge carrier mobility. It is 3.4; 10.8; 14.7; 16.2 cm 2 / Vs from monolayer film to 4-ply film. List of figures
• FIG. 2 shows a diagram of the effective charge carrier mobility of a monolayer layer according to Example 1 and of a bilayer layer, trilayer layer and five-layer layer according to Example 2 with in each case adapted concentration and at comparable total thicknesses of the obtained

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• 2013
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