EP2615631B1 - Method for producing microstructure using processing liquid for suppressing pattern collapse of microstructure - Google Patents

Method for producing microstructure using processing liquid for suppressing pattern collapse of microstructure Download PDF

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Publication number
EP2615631B1
EP2615631B1 EP11823334.5A EP11823334A EP2615631B1 EP 2615631 B1 EP2615631 B1 EP 2615631B1 EP 11823334 A EP11823334 A EP 11823334A EP 2615631 B1 EP2615631 B1 EP 2615631B1
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Prior art keywords
processing liquid
microstructure
pure water
liquid
carbon atoms
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EP11823334.5A
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German (de)
English (en)
French (fr)
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EP2615631A4 (en
EP2615631A1 (en
Inventor
Hiroshi Matsunaga
Masaru Ohto
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Mitsubishi Gas Chemical Co Inc
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Mitsubishi Gas Chemical Co Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00111—Tips, pillars, i.e. raised structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00841—Cleaning during or after manufacture
    • B81C1/00849—Cleaning during or after manufacture during manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0005—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same
    • B81C99/001—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same for cutting, cleaving or grinding
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0361—Tips, pillars

Definitions

  • the present invention relates to a method for producing a microstructure formed of polysilicon using a processing liquid.
  • the photolithography technique has been employed as a formation and processing method of a device having a microstructure used in a wide range of fields of art including a semiconductor device, a circuit board and the like.
  • reduction of size, increase of integration degree and increase of speed of a semiconductor device considerably proceed associated with the highly sophisticated demands on capabilities, which bring about continuous miniaturization and increase of aspect ratio of a resist pattern used for photolithography.
  • the progress of miniaturization of the resist pattern causes pattern collapse as a major problem.
  • the strength of the material itself constituting the structure is larger than the strength of the resist pattern itself or the bonding strength between the resist pattern and the substrate, and therefore, the collapse of the structure pattern is hard to occur as compared to the resist pattern.
  • the pattern collapse of the structure is becoming a major problem due to miniaturization and increase of aspect ratio of the pattern.
  • Patent Document 4 there are no descriptions concerning details of the surfactant including kind (nonionic, anionic or cationic, etc.), product names, concentrations or the like.
  • Patent Document 5 discloses a cleaning composition for etching titanium nitride without corroding a wiring material, as well as a method of cleaning using said composition, wherein said composition comprises dodecyl pyridinium chloride or 1-hexadecyl-4-methylpyridinium chloride, and water.
  • Patent Document 6 discloses a cleaning liquid for removing a photoresist, an etching residue, an antireflective film, and an ashing residue, as well as a method of cleaning using said liquid, wherein said liquid comprises a surfactant such as cetyl or lauryl pyridinium chloride, and water.
  • a surfactant such as cetyl or lauryl pyridinium chloride
  • Patent Document 7 relates to a method of cleaning a structure formed of polysilicon using a cleaning composition comprising a surfactant and water.
  • microstructures in particular, microstructures formed of polysilicon
  • a semiconductor device and a micromachine a micromachine
  • the present invention has been developed under the circumstances, and an object thereof is to provide a method for producing a microstructure formed of polysilicon using a processing liquid that is capable of suppressing pattern collapse of the microstructure formed of polysilicon, such as a semiconductor device and a micromachine.
  • the object can be achieved with a processing liquid including at least one compound selected from the group consisting of pyridinium halides containing an alkyl group having 12, 14 or 16 carbon atoms.
  • the present invention has been accomplished on the basis of the above finding. Accordingly, the present invention relates to a method for producing a microstructure formed of polysilicon according to claim 1.
  • FIG. 1(a) to FIG. 1(h) are schematic cross sectional views showing respective production steps of a microstructure.
  • the processing liquid (i.e., a processing liquid for suppressing pattern collapse) is used for suppressing pattern collapse of a microstructure formed of polysilicon, and includes at least one compound selected from the group consisting of pyridinium halides containing an alkyl group having 12, 14 or 16 carbon atoms.
  • microstructure formed of polysilicon means a microstructure in which a portion to be processed with the processing liquid is formed of polysilicon.
  • the pyridinium halide containing an alkyl group having 12, 14 or 16 carbon atoms used in the processing liquid is adsorbed to the material used in the pattern of the microstructure, thereby hydrophobizing the surface of the pattern.
  • the hydrophobization as used herein means that the contact angle of the material having been processed with the processing liquid with respect to water is 70° or more.
  • the alkyl group having 12 carbon atoms is preferably a dodecyl group
  • the alkyl group having 14 carbon atoms is preferably a tetradecyl group
  • the alkyl group having 16 carbon atoms is preferably a hexadecyl group.
  • the compounds having such a straight chain alkyl group can be adsorbed to a polysilicon material with a high density as compared to those compounds having a branched alkyl group.
  • Preferred examples of the pyridinium halide containing an alkyl group having 12, 14 or 16 carbon atoms include dodecyl pyridinium chloride, dodecyl pyridinium bromide, dodecyl pyridinium iodide, tetradecyl pyridinium chloride, tetradecyl pyridinium bromide, tetradecyl pyridinium iodide, hexadecyl pyridinium chloride, hexadecyl pyridinium bromide, hexadecyl pyridinium iodide, 1-dodecyl-4-methyl pyridinium chloride, 1-dodecyl-4-methyl pyridinium bromide, 1-dodecyl-4-methyl pyridinium idinium bromide, 1-dodecyl-4-methyl pyridinium idinium chlor
  • pyridinium halides especially preferred are dodecyl pyridinium chloride, tetradecyl pyridinium chloride, hexadecyl pyridinium chloride, 1-dodecyl-4-methyl pyridinium chloride, 1-tetradecyl-4-methyl pyridinium chloride and 1-hexadecyl-4-methyl pyridinium chloride.
  • the processing liquid for suppressing pattern collapse is used in the form of an aqueous solution.
  • Preferred examples of the water used for preparation of the aqueous solution include water, from which metallic ions, organic impurities, particles and the like are removed by distillation, ion exchange, filtering, adsorption treatment or the like, and particularly preferred examples thereof include pure water and ultrapure water.
  • the processing liquid for suppressing pattern collapse includes the at least one compound selected from the group consisting of pyridinium halides containing an alkyl groups having 12, 14 or 16 carbon atoms, and water, and may also contain various kinds of additives that are ordinarily used in processing liquids for suppressing pattern collapse in such a range that does not impair the advantages of the processing liquid.
  • the content of the at least one compound selected from the group consisting of pyridinium halides containing an alkyl group having 12, 14 or 16 carbon atoms (when using two or more kinds of compounds, it means a total content thereof) in the processing liquid is preferably from 10 ppm to 10%.
  • the content of the compound is in the range, the advantages of these compound may be sufficiently obtained, and in consideration of handleability, economy and foaming, the content is preferably 5% or less, more preferably from 10 to 2,000 ppm, and more preferably from 10 to 1,000 ppm.
  • an organic solvent such as an alcohol, may be added, and an acid or an alkali may be added to enhance the solubility.
  • the processing liquid may be used in such a range that does not impair the advantages of the processing liquid, and may be used while stirring to render the processing liquid homogeneous. Furthermore, for avoiding the white turbidity of the processing liquid, the processing liquid may be used after adding an organic solvent, such as an alcohol, an acid or an alkali thereto as similar to the above case.
  • an organic solvent such as an alcohol, an acid or an alkali thereto as similar to the above case.
  • the processing liquid for suppressing pattern collapse is suitably used for suppressing pattern collapse of a microstructure formed of polysilicon, such as a semiconductor device and a micromachine.
  • the microstructure may be patterned on an insulating film species, such as TEOS (a tetraethoxy ortho silane oxide film) and SiOC-based low dielectric constant films (such as "Black Diamond 2" (tradename) available from Applied Materials Inc., and “Aurora 2.7” and “Aurora 2.4” (tradenames) both available from ASM International N.V.), in some cases, or the insulating film species may be contained as a part of the microstructure in some cases.
  • TEOS a tetraethoxy ortho silane oxide film
  • SiOC-based low dielectric constant films such as "Black Diamond 2" (tradename) available from Applied Materials Inc., and "Aurora 2.7" and “Aurora 2.4" (tradenames) both available from ASM International N.V.
  • the processing liquid for suppressing pattern collapse can exhibit excellent pattern collapse suppressing effect to not only an ordinary microstructure, but also a microstructure with further miniaturization and higher aspect ratio.
  • the aspect ratio as referred herein is a value calculated from (height of pattern/width of pattern), and the processing liquid may also exhibit excellent pattern collapse suppressing effect to a pattern that has a high aspect ratio of 3 or more, and further 7 or more.
  • the processing liquid for suppressing pattern collapse has excellent pattern collapse suppressing effect to a finer pattern with a pattern size (pattern width) of 300 nm or less, further 150 nm or less, and still further 100 nm or less, and with a pattern size of 50 nm or less and a line/space ratio of 1/1, and similarly to a finer pattern with a pattern distance of 300 nm or less, further 150 nm or less, still further 100 nm or less, and still further 50 nm or less and a cylindrical hollow or cylindrical solid structure.
  • a pattern size pattern width
  • the method for producing a microstructure formed of polysilicon according to the present invention includes, after wet etching or dry etching, a rinsing step using the processing liquid for suppressing pattern collapse. More specifically, in the rinsing step, it is preferred that the pattern of the microstructure is made in contact with the processing liquid by dipping, spray ejecting, spraying or the like, then the processing liquid is replaced by water, and the microstructure is dried.
  • the dipping time is preferably from 10 seconds to 30 minutes, more preferably from 15 seconds to 20 minutes, still more preferably from 20 seconds to 15 minutes, and especially preferably from 30 seconds to 10 minutes
  • the temperature condition is preferably from 10 to 80°C, more preferably from 15 to 60°C, still more preferably from 25 to 50°C, and especially preferably from 25 to 40°C.
  • the pattern of the microstructure may be rinsed with water before making in contact with the processing liquid. The contact between the pattern of the microstructure and the processing liquid enables suppression of collapse of the pattern through hydrophobization of the surface of the pattern.
  • the processing liquid for suppressing pattern collapse may be applied widely to a production process of a microstructure irrespective of the kind of microstructure, with the production process having a step of wet etching or dry etching, then a step of wet processing (such as etching, cleaning or rinsing for washing away the cleaning liquid), and then a drying step.
  • the processing liquid may be suitably used after the etching step in the production process of a semiconductor device or a micromachine, for example, (i) after wet etching of an insulating film around an electroconductive film in the production of a DRAM type semiconductor device (see, for example, JP-A-2000-196038 and JP-A-2004-288710 ), (ii) after a rinsing step for removing contamination formed after dry etching or wet etching upon processing a gate electrode in the production of a semiconductor device having a transistor with a fin in the form of strips (see, for example, JP-A-2007-335892 ), and (iii) after a rinsing step for removing contamination formed after etching for forming a cavity by removing a sacrifice layer formed of an insulating film through a through hole in an electroconductive film upon forming a cavity of a micromachine (electrodynamic micromachine) (see, for example, JP-A
  • Processing liquids for suppressing pattern collapse of a microstructure were prepared according to the formulation compositions (% by mass) as shown in Table 1.
  • Table 1 TABLE 1 kind Number of carbon atoms in alkyl group*1 Content Processing liquid 1
  • 1-Doclecyl-4-methyl pyridinium chloride 12 300 ppm Processing liquid 4
  • Hexadecyl pyridinium chloride 16 30 ppm Processing
  • silicon nitride 103 (thickness: 100 nm) and silicon oxide 102 (thickness: 1,200 nm) were formed as films on a silicon substrate 104, then a photoresist 101 was formed, and the photoresist 101 was exposed and developed, thereby forming a tubular (chimney-shaped) opening 105 (diameter: 125 nm, distance between circles: 50 nm), as shown in FIG. 1(b) .
  • the silicon oxide 102 was etched by dry etching with the photoresist 101 as a mask, thereby forming a cylindrical hole 106 reaching the layer of silicon nitride 103, as shown in FIG. 1(c) .
  • the photoresist 101 was then removed by ashing, thereby providing a structure having the silicon oxide 102 with the cylindrical hole 106 reaching the layer of silicon nitride 103, as shown in FIG. 1(d) .
  • the cylindrical hole 106 of the resulting structure was filled and deposited with polysilicon 107 ( FIG. 1(e) ), and an excessive portion of the polysilicon 107 on the silicon oxide 102 was removed by chemical mechanical polishing (CMP), thereby providing a structure having the silicon oxide 102 with a cylindrical hollow 108 of polysilicon embedded therein, as shown in FIG. 1(f) .
  • the silicon oxide 102 of the resulting structure was removed by dissolving with hydrofluoric acid, and then the structure was processed by making into contact with pure water, the respective processing liquids 1 to 12, and pure water in this order, followed by drying, thereby providing a structure shown in FIG. 1(g) .
  • the resulting structure had a microstructure with a tubular (chimney-shaped) pattern formed of polysilicon (diameter: 125 nm, height: 1,200 nm (aspect ratio: 9.6), distance between the cylindrical hollows: 50 nm), and 70% or more of the pattern was not collapsed.
  • the pattern collapse was observed with "FE-SEM S-5500 (model number)" available from Hitachi High-Technologies Corporation, and the collapse suppression ratio was a value obtained by calculating the ratio of the not-collapsed pattern in the total pattern. Cases where the collapse suppression ratio was 50% or more were determined as "passed".
  • the processing liquids for suppressing pattern collapse, the processing methods and the results of collapse suppression ratios in the respective Examples are shown in Table 3.
  • FIG. 1(g) A structure shown in FIG. 1(g) was obtained in the same manner as in Example 1 except that after removing the silicon oxide 102 of the structure shown in FIG. 1(f) by dissolving with hydrofluoric acid, the structure was processed only with pure water. As a result, 50% or more of the pattern of the resulting structure were collapsed as shown in FIG. 1(h) (which indicated a collapse suppression ratio of less than 50%).
  • the processing liquid, the processing method and the result of collapse suppression ratio in Comparative Example 1 are shown in Table 3.
  • FIG. 1(g) of Comparative Examples 2 to 17 were obtained in the same manner as in Example 1 except that after removing the silicon oxide 102 of the structures shown in FIG. 1(f) by dissolving with hydrofluoric acid and then processing the structures with pure water, the structures were processed with the respective comparative liquids 2 to 17 shown in Table 2 instead of the processing liquid 1. As a result, 50% or more of the pattern of the resulting respective structures were collapsed as shown in FIG. 1(h) .
  • the processing liquids, the processing methods and the results of collapse suppression ratios in Comparative Examples 2 to 17 are shown in Table 3.
  • the processing liquid may be suitably used for suppressing pattern collapse upon production of a microstructure, such as a semiconductor device and a micromachine (MEMS).
  • a microstructure such as a semiconductor device and a micromachine (MEMS).
  • MEMS micromachine
  • 101 Photoresist
  • 102 Silicon oxide
  • 103 Silicon nitride
  • 104 Silicon substrate
  • 105 Circular opening
  • 106 Cylindrical hole
  • 107 Polysilicon
  • 108 Cylindrical hollows formed of polysilicon

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Micromachines (AREA)
EP11823334.5A 2010-09-08 2011-07-14 Method for producing microstructure using processing liquid for suppressing pattern collapse of microstructure Active EP2615631B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010200782 2010-09-08
PCT/JP2011/066157 WO2012032855A1 (ja) 2010-09-08 2011-07-14 微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法

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EP2615631A1 EP2615631A1 (en) 2013-07-17
EP2615631A4 EP2615631A4 (en) 2015-03-04
EP2615631B1 true EP2615631B1 (en) 2019-05-08

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US (1) US20130171828A1 (ja)
EP (1) EP2615631B1 (ja)
JP (1) JP5741590B2 (ja)
KR (1) KR102025121B1 (ja)
CN (1) CN103098179B (ja)
TW (1) TWI597587B (ja)
WO (1) WO2012032855A1 (ja)

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MY165866A (en) 2011-03-18 2018-05-18 Basf Se Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less
JP2016139774A (ja) * 2015-01-23 2016-08-04 富士フイルム株式会社 パターン処理方法、半導体基板製品の製造方法およびパターン構造の前処理液

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US20130171828A1 (en) 2013-07-04
KR102025121B1 (ko) 2019-09-25
KR20140018833A (ko) 2014-02-13
TWI597587B (zh) 2017-09-01
CN103098179A (zh) 2013-05-08
JP5741590B2 (ja) 2015-07-01
EP2615631A4 (en) 2015-03-04
TW201227180A (en) 2012-07-01
CN103098179B (zh) 2016-12-07
WO2012032855A1 (ja) 2012-03-15
JPWO2012032855A1 (ja) 2014-01-20
EP2615631A1 (en) 2013-07-17

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