EP2598286A2 - Outil de meulage pour meulage trapézoïdal d'une tranche - Google Patents

Outil de meulage pour meulage trapézoïdal d'une tranche

Info

Publication number
EP2598286A2
EP2598286A2 EP11760557.6A EP11760557A EP2598286A2 EP 2598286 A2 EP2598286 A2 EP 2598286A2 EP 11760557 A EP11760557 A EP 11760557A EP 2598286 A2 EP2598286 A2 EP 2598286A2
Authority
EP
European Patent Office
Prior art keywords
wafer
grinding
groove
grooves
wheel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11760557.6A
Other languages
German (de)
English (en)
Inventor
Guoqiang David Zhang
Roland Vandamme
Peter D. Albrecht
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of EP2598286A2 publication Critical patent/EP2598286A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D5/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting only by their periphery; Bushings or mountings therefor
    • B24D5/14—Zonally-graded wheels; Composite wheels comprising different abrasives

Definitions

  • This disclosure relates to semiconductor and solar wafers such as silicon on
  • SOI insulator
  • Semiconductor wafers are generally prepared from a single crystal ingot (e.g., a silicon ingot) which is sliced into individual wafers. While reference will be made herein to semiconductor wafers constructed from silicon, other materials may be used as well, such as germanium, gallium arsenide or other
  • One type of wafer is a
  • SOI wafer silicon-on-insulator wafer.
  • An SOI wafer includes a thin layer of silicon (an active layer) atop an insulating layer (i.e., an oxide layer) which is in turn disposed on a silicon substrate.
  • a bonded SOI semiconductor wafer is a type of SOI structure.
  • outer peripheral portions of the two wafers to be bonded are subjected to R or T chamfering, or edge profiling (as further described below) , in order to prevent wafer breakage, cracks and/or particle generation. Also, outer peripheral portions of a bonded substrate have uneven thickness due to wafering steps. Because of this uneven thickness, during the bonding process, the outer
  • peripheral portion is either not bonded at all and/or weakly bonded.
  • this unbonded portion is partially delaminated from the bonded substrate during the film thickness reducing processes.
  • the delaminated parts cause problems for film thickness reduction, cleaning, and measurement processes.
  • the remaining unbonded portions are delaminated, which causes particle generation and severely impacts device yields.
  • Figures 1A- 1D show a progression of steps for bonding a substrate wafer S and an active layer wafer A to each other and then chamfering the edge peripheral portion of the bonded wafer W.
  • Figure 1A shows the substrate below the active layer wafer
  • Figure IB shows the bonded wafers.
  • Figure 1C shows a grinder G grinding the outer peripheral edges of the wafers
  • Figure ID shows the complete SOI wafer W (note that the complete wafer is further processed) .
  • This method is believed to be substantively similar to that shown in Japanese Patent Application No. 1986-256621.
  • the diameter of the wafer W is smaller than the standard wafer diameter, which causes problems for the downstream handling facilities and jigs.
  • a bonded SOI wafer W is formed as described above from an active layer wafer A and a substrate wafer S.
  • the wafer edges are ground as shown in Figures 2B-2C such that the entire outer edge of the active wafer A is ground off, but only a portion of substrate is ground off.
  • This method is believed to be substantively similar to that shown in Japanese Patent Application No. 1989-227441. This method suffers from poor efficiency.
  • the active wafer A is ground at its edges to form a ledge L (wafer A is thus a pre-ground wafer) .
  • the wafer A is bonded to substrate wafer S in Figure 3B.
  • the top surface of the bonded SOI wafer W is ground to remove the ledge L, and the complete wafer is shown in Figure 3D.
  • the unbonded portion of the active layer wafer can thereafter be ground down. This method is believed to be substantively similar to that shown in Japanese Patent Application No. 1992-85827.
  • a bonded SOI wafer W is formed as described above from an active layer wafer A and a substrate wafer S.
  • the active wafer A is ground at its upper peripheral edge E to form the ledge L shown in Figure 4C.
  • selective etching, polishing and/or PAC plasma assisted chemical etching processes are used to remove the unbonded parts from the outer peripheral edge of the active layer wafer A.
  • This method is believed to be substantively similar to that shown in US Patent 6,534,384 B2, which is incorporated herein by reference. As can be seen, many steps are required to form the complete wafer.
  • the active layer wafer A includes a groove R formed in its lower surface prior to bonding.
  • the active wafer A is bonded to the substrate wafer S in Figure 5B.
  • This method is believed to be substantively similar to that shown in US Patent Application 2009/0203167 Al, which is incorporated herein by reference.
  • grinding is performed on wafer A on the opposite side from the groove R. The unbonded portion of the outer peripheral portion of the wafer A can be removed after grinding the wafer to
  • a grinding tool for trapezoid grinding of a wafer on a profiling machine comprises an annular wheel including a central hole adapted for mounting the wheel on a spindle.
  • the wheel includes at least two grooves disposed at an outer edge of the wheel and the grooves are sized for receiving an outer edge of the wafer. At least one of the grooves is adapted for rough grinding of the wafer. At least one other of the grooves is adapted for fine grinding of the wafer.
  • the wheel of the grinding tool includes three or more grooves disposed at an outer edge of the wheel and the grooves and sized for receiving an outer edge of the wafer. At least one of the grooves is adapted for rough grinding of the wafer and at least one other of the grooves is adapted for fine
  • Each groove is sized and shaped so that only the upper peripheral edge of the wafer is ground .
  • a grinding tool for grinding of a wafer on a profiling machine comprises an annular wheel including a central hole adapted for mounting the wheel on a spindle.
  • the wheel includes three or more grooves disposed at an outer edge of the wheel and the grooves are sized for receiving an outer edge of the wafer.
  • One groove is for rough grinding of the wafer and at least two grooves are for fine
  • Each groove has a V-shape in cross- section and is sized relative to the wafer so that only the upper peripheral edge of the wafer is ground.
  • Figures 1A-5D are side views showing prior art methods of making an SOI wafer.
  • Figure 6 is a flowchart showing a method of manufacturing an SOI wafer according to one embodiment .
  • Figures 7A-7E are a progression of side views showing aspects of the method of manufacturing of Figure 6.
  • Figure 8 is a flowchart showing a method of manufacturing an SOI wafer according to another embodiment .
  • Figures 9A-9D are a progression of side views showing aspects of the method of manufacturing of Figure 8.
  • Figures 10 and 11 show a grinding wheel of one embodiment for performing a trapezoid grinding step.
  • Figure 12 is a side view of an SOI wafer aligned with a groove of the grinding wheel of Figure 10.
  • Figure 13 is an enlarged view of an SOI wafer after trapezoid grinding.
  • a method 100 of manufacturing or processing a bonded wafer (alternatively, a silicon-on-insulator structure or SOI wafer) is shown.
  • An active wafer 101 and a substrate wafer 103, such as those shown in Fig 7A, are conventional wafers. Both have mirror-polished front surfaces 101F, 103F and are relatively defect-free.
  • Active wafer 101 and substrate wafer 103 may be any single crystal semiconductor material suitable for use in an SOI structure.
  • the wafers may be composed of a material selected from the group consisting of silicon, germanium, gallium arsenide, silicon germanium, gallium nitride, aluminum nitride, phosphorous, sapphire and combinations thereof.
  • the wafers 101, 103 are made of silicon.
  • a layer of oxide is deposited 102 on the front surface of the active wafer. Oxidation is typically performed in a vertical furnace, e.g.
  • AMS400 commercially available AMS400.
  • the front surface of the wafer is then bonded 104 to the front surface of the substrate wafer to form a bonded wafer 105 as shown in Fig 7B. Bonding can be performed in a conventional
  • hydrophilic bonding process using a tool such as Model EVG® 850 from EV Group of Austria.
  • Heat treatment 106 is suitably performed in an electric oven (such as model Blue M from TPS of Pennsylvania) to strengthen the bond.
  • trapezoid grinding 108 is further described below with reference to Fig. 7C.
  • Surface grinding 110 shown in Fig. 7D is suitably performed using a single side grinder, such as in model DFG-830 from Disco Corporation of Japan.
  • the surface grinding 110 suitably includes a rough grinding step and a fine grinding step. Rough grinding is suitably performed using a 600 mesh with 20-30 microns grit size, and fine grinding is 3000 mesh and grit size of 2-6 microns.
  • etching 112 is next performed on the bonded wafer 105, and is suitably performed in a conventional etching apparatus using an alkali etchant, though an acid etchant may also be used.
  • Polishing 114 is then performed and is suitably a single- side polishing on front surface 105F using a Strasbaugh Mark 9-K. Alternatively, the polishing 114 may be a double-side polishing of both the front surface 105F and back surface 105B.
  • Finishing 116 of the bonded wafer 105 includes inspecting the wafer for all required parameters, such as flatness and particle count, and then packaging the wafer for shipment to customers.
  • the finished or bonded wafer 105 has an upper portion having a trapezoid shape. More specifically, the upper portion including the remainder of the active layer wafer 101 and a relatively small portion of the substrate wafer is angled at the outer peripheral edge portion so that the wafer is said to have a trapezoid shape or a trapezoid shape in cross-section.
  • the lower portion of the bonded wafer 105 (which corresponds substantially to the substrate wafer 103 in this embodiment) has a conventional bevel or rounded shape (broadly, a curved shape) at its outer peripheral edge and thus does not have a trapezoid shape.
  • the upper portion of the bonded wafer 105 is substantially coincident with the active wafer 101 in this embodiment .
  • an outer peripheral edge of the active wafer 101 is brought into contact with the grinding wheel and is ground at an angle relative to the front surface 105F of the bonded wafer 105.
  • the angle is suitably between about 3° and 10°, and in this embodiment the angle is about 7°.
  • the edge grinding is performed until the entire outer peripheral edge is ground as shown in Figure 7D. The grinding
  • the grinding may suitably be done such that the length of the angled or sloped portion is between about 1 mm and 1.5 mm, e.g. about 1.25 mm. Note that the angle and depth of grind is such that a small portion of the top bevel 119 of the substrate wafer 103 is removed during the trapezoid grinding .
  • the surface of the active wafer 101 is ground until it has a thickness of 40- 50 microns, as shown in Figure 7D. Note the trapezoid shape of the active wafer 101 in Figure 7D. Also, the edge grind is performed such that a portion of the
  • substrate wafer 103 is ground.
  • the grinding steps are reversed as compared to that of Figures 6 and 7A-7D.
  • the surface of the active wafer 101 is ground first, before the trapezoid grinding.
  • This order of steps is shown in Figure 8.
  • the surface grinding step may include a rough grinding step and a fine grinding step. Rough grinding is suitably performed using a 600 mesh and grit size of 20 to 30 microns, and fine grinding is 3000 mesh and grit size of 2 to 6 microns.
  • the surface is ground as shown in Figure 9B, and then the edge of the active wafer 101 is next ground in Figure 9C until the edges have the trapezoid shape shown in Figure 9D.
  • a grinding wheel 151 (broadly, a trapezoid grinding tool) of one embodiment is designed for the performance of the trapezoid grinding 108.
  • the wheel 151 is adapted to be mounted on a conventional edge profiling machine 152 that performs the trapezoid grinding.
  • the profiling machine is an STC EP-5800RHO machine adapted for 200 mm diameter wafers.
  • the wheel 151 is mounted on a spindle 153 of the profiling machine 152.
  • the wheel 151 of this embodiment is ring-shaped or annular and has a central hole 154 adapted for mounting the wheel on the on the spindle 151 of the profiling machine 152.
  • the wheel 151 has a diameter D of 202 mm with a central hole diameter HD of 30 mm and thickness of 20 mm.
  • the wheel 151 of this embodiment has an upper groove 155, a central groove 157 and a lower groove 159 disposed at an outer edge of the wheel.
  • the grooves 155, 157, 159 are generally V-shaped in this embodiment. Note that the wheel 151 may alternatively have just one groove, or practically any other number of grooves, within the scope of this disclosure.
  • the upper and central grooves 155, 157 are adapted for fine grinding, and the lower groove 159 is adapted for rough grinding.
  • Each groove suitably includes diamond grits.
  • diamond grit size 2000 or 3000 mesh is suitable.
  • 600 mesh or 800 mesh is suitable.
  • the wheel 151 is suitably made of metal alloy, aluminum alloy, or stainless steel, though other materials are contemplated.
  • Each groove wall of this embodiment slopes from a bottom of the groove to a top of the groove and has a flat bottom. In this embodiment, the slope is at about a 7° angle.
  • the width of the bottom of the groove is about 1.8 mm for use with a bonded wafer having a total thickness of about 200 mm, so that the substrate wafer or back surface of the wafer is not in contact with the groove during trapezoid grinding.
  • the width of each groove at its widest portion (the top of the groove) is about 3.5 mm.
  • the wall of the groove curves into the bottom of the groove at a radius of about 0.2 mm.
  • the groove depth GD is about 6.0 mm and the groove root depth RD is about 8.0 mm.
  • the wheel 151 is installed on the edge profiling machine 152, such as on a spindle of the STC EP- 5800 RHO. After wheel installation, spindle height
  • Trapezoid grinding can be performed with either rough grit groove or fine grit groove or both grit grooves (first rough grit groove, then fine grit groove) .
  • the grinding may be performed as a single pass or multiple pass process, depending, for example, on edge quality requirements.
  • the bonded wafer according to embodiments of this disclosure is less likely to suffer delamination . Additionally, the bonded wafer inhibits or prevents particle contamination that might otherwise occur due to delaminated unbonded portions on the process/device lines of the wafer.

Abstract

L'invention porte sur un outil de meulage pour le meulage trapézoïdal d'une tranche sur une machine à profiler, lequel outil comprend une roue annulaire comprenant un trou central adapté pour monter la roue sur un arbre rotatif. La roue comprend au moins deux rainures disposées à un bord externe de la roue, et les rainures sont dimensionnées de façon à recevoir un bord externe de la tranche. Au moins l'une des rainures est apte à meuler grossièrement la tranche. Au moins une autre des rainures est apte à meuler finement la tranche.
EP11760557.6A 2010-07-30 2011-07-22 Outil de meulage pour meulage trapézoïdal d'une tranche Withdrawn EP2598286A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/847,015 US20120028555A1 (en) 2010-07-30 2010-07-30 Grinding Tool For Trapezoid Grinding Of A Wafer
PCT/IB2011/053282 WO2012014137A2 (fr) 2010-07-30 2011-07-22 Outil de meulage pour meulage trapézoïdal d'une tranche

Publications (1)

Publication Number Publication Date
EP2598286A2 true EP2598286A2 (fr) 2013-06-05

Family

ID=44674831

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11760557.6A Withdrawn EP2598286A2 (fr) 2010-07-30 2011-07-22 Outil de meulage pour meulage trapézoïdal d'une tranche

Country Status (8)

Country Link
US (1) US20120028555A1 (fr)
EP (1) EP2598286A2 (fr)
JP (1) JP2013532587A (fr)
KR (1) KR20130132388A (fr)
CN (1) CN103180098A (fr)
SG (1) SG187057A1 (fr)
TW (1) TW201212116A (fr)
WO (1) WO2012014137A2 (fr)

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JP5926527B2 (ja) * 2011-10-17 2016-05-25 信越化学工業株式会社 透明ｓｏｉウェーハの製造方法
KR101871854B1 (ko) * 2016-05-31 2018-06-28 주식회사 케이엔제이 기판 가공장치
CN106239306B (zh) * 2016-08-01 2018-07-31 中国电子科技集团公司第四十六研究所 一种变r值晶片边缘倒角方法
US11450578B2 (en) * 2018-04-27 2022-09-20 Tokyo Electron Limited Substrate processing system and substrate processing method
CN109571183B (zh) * 2018-11-30 2024-02-20 温州市华晖汽摩配件厂(普通合伙) 一种镜片磨边机用自出水多弧度镜片玻璃倒边磨头
KR102195461B1 (ko) * 2019-03-28 2020-12-29 주식회사 케이엔제이 기판 연마장치
KR102199074B1 (ko) * 2019-05-28 2021-01-06 주식회사 케이엔제이 기판 연마장치
CN111390713B (zh) * 2020-04-09 2020-12-11 山东广域科技有限责任公司 一种电力绝缘子加工成型工艺

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Also Published As

Publication number Publication date
JP2013532587A (ja) 2013-08-19
WO2012014137A2 (fr) 2012-02-02
WO2012014137A3 (fr) 2012-03-22
SG187057A1 (en) 2013-02-28
US20120028555A1 (en) 2012-02-02
CN103180098A (zh) 2013-06-26
TW201212116A (en) 2012-03-16
KR20130132388A (ko) 2013-12-04

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