Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
  • H01L31/042—PV modules or arrays of single PV cells
  • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/26—Bombardment with radiation
  • H01L21/263—Bombardment with radiation with high-energy radiation
  • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/02—Details
  • H01L31/0224—Electrodes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/02—Details
  • H01L31/0224—Electrodes
  • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
  • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
  • H01L31/022433—Particular geometry of the grid contacts
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
  • H01L31/042—PV modules or arrays of single PV cells
  • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
  • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
  • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
  • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/547—Monocrystalline silicon PV cells
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
  • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
  • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

• the invention relates to a method for producing a photovoltaic module with back-contacted semiconductor cells and a photovoltaic module.
• Photovoltaic modules based on semiconductors which are known from the prior art consist of an entirety of semiconductor cells. In these, an electrical voltage is generated under the effect of an external light incidence.
• the semiconductor cells are expediently interconnected in order to be able to tap the highest possible current intensity from the photovoltaic module. For a contacting of the semiconductor cells and an appropriate wiring within the photovoltaic module is necessary.
• bands are used for routing. These are usually band-shaped conductor sections made of metal, in particular copper.
• the contacting between a ribbon and the semiconductor cells connected therewith usually takes place by means of a soft solder connection. In this case, the contacts are guided from an upper light-active side of a semiconductor cell to a light-remote rear side of a next semiconductor cell. At the contact points between the ribbon and the semiconductor Cell are located on the semiconductor cells metallized contact areas on which the solder connection is made.
• the method for producing a photovoltaic module with back-contacted semiconductor cells with respective contact areas provided on one contact side comprises the following method steps:
• a film-type, nonconductive support with an at least one-sided and at least section-wise electrically conductive carrier coating on a first carrier side is provided. Thereafter, the contact sides of the semiconductor cells are placed on a second carrier side. Subsequently, a local perforation penetrating the carrier and the conductive carrier coating is carried out for generating openings at the contact regions of the semiconductor cells. The next step is a contacting means for filling the openings and for forming a contact between the carrier coating on the first carrier side and the semiconductor cells applied to the second carrier side.
• a carrier film having at least on one side a conductive coating The semiconductor cells are placed on the other side of the carrier. Their contact pages are thus directly on the carrier. Subsequently, precisely those contact areas of the semiconductor cells are exposed through a perforation, which are to be contacted electrically. The breakthroughs generated in the carrier are conductively filled and thus form a selective contact between the contract areas and the carrier coating.
• the semiconductor cells can strip during the perforation by plastic, for example by a so-called EVA tape, be fixed. It is expedient to use a plastic with which, if appropriate, also a lamination of the photovoltaic module or its components takes place.
• a great advantage of the method is that the occasional positional inaccuracies occurring in large-scale manufacturing processes when settling the semiconductor cells are unproblematic.
• the actual locations of the contact between the semiconductor cells and the conductive carrier coating are determined only when the contacting is imminent.
• the placement process of the semiconductor cells can take place with comparatively generous manufacturing tolerances.
• a lamination step for laminating the semiconductor cells is carried out.
• the semiconductor cells are firmly connected to the carrier and do not change their position during subsequent process steps.
• the entirety of the carrier with the laminated semiconductor cells forms a composite that can be stored without problems and kept ready for the subsequent process steps.
• a carrier glass of the semiconductor cells in the same lamination, a carrier glass of the
• Photovoltaic module to be laminated.
• At least one further contacting layer is produced after the application of the contacting agent, the following method steps being carried out:
• a local perforation penetrating the cover layer, the carrier and / or the carrier coating for producing openings on the contact regions of the semiconductor cells is carried out.
• a contacting agent is applied to the cover layer for filling the openings and for forming the contact layer extending on the cover layer.
• soldering is carried out, a soldering material is introduced through a solder carrier to the opening to be filled and filled there after melting.
• the selective soldering is carried out in a convenient embodiment as a laser soldering. The melting takes place by exposure to laser light.
• image recognition of the semiconductor cells arranged on the carrier is expediently carried out, with direct referencing of a perforation device on each individual semiconductor cell taking place by image processing and / or reference setting.
• the image recognition is performed by a fluoroscopy device. This generates a fluoroscopic image.
• a contour recognition is carried out on each fluoroscopic image and the perforation device is automatically moved as a result of the contour recognition to a position determined therefrom for producing the respective aperture.
• the local perforation is carried out in an expedient embodiment in the form of a laser drilling using a laser drilling apparatus. This allows the perforation to be very accurate and contactless.
• a photovoltaic module comprising an entirety of semiconductor cells with a rear-side contact and a carrier, which according to the invention is characterized in that the carrier is formed as a film or a laminate, wherein the carrier filled with a conductive material breakthroughs in the Semiconductor cells for forming a contact between the semiconductor cells arranged on one side of the carrier and on another side of the carrier extending conductive tracks of conductive material.
• the conductive material is expediently formed as a conductive lamination, an ink, a paste or a solder.
• Fig. 1 shows a Aufsetz Colour of the semiconductor cells on a support.
• the semiconductor cells 1 shown here are designed, for example, as crystalline photovoltaic cells. They consist of silicon or a comparable semiconductor material and have the doped regions not shown here in detail for such cells for the energy conversion of solar energy into electrical voltage.
• Each semiconductor cell contains in each case one contact side 2 with contact regions 3 arranged there. The contact regions are usually galvanically metallized. For settling, it is customary to resort to a settling device (not shown here).
• a carrier 4 is provided for backside contacting of the semiconductor cells and in particular their contact sides 2. This consists of a foil-like electrically insulating material or a laminate of electrical Irish non-conductive films. The fixation of the semiconductor cells on the
• Carrier takes place by means of a plastic film 4a.
• a plastic film 4a This consists for example of strip-applied ethylene vinyl acetate (EVA) in the form of a tape.
• EVA ethylene vinyl acetate
• the semiconductor cells can also be glued non-conductive to the carrier.
• the carrier has an adhesive surface, which is not separately designated here. Respective embodiments are shown below in FIGS. 5 to 7.
• the carrier 4 is provided with an electrically conductive carrier coating 5 applied here on one side. This can be designed as a vapor-deposited metal layer or a metal foil, which is connected to the carrier in the form of a laminate.
• the carrier coating can be formed over the entire surface or in sections. In the example shown here is the
• Row of trenches 6 are divided.
• the coating consists for example of copper or a comparatively good electrically conductive material with which a series resistance of the semiconductor cells to be contacted can be reduced.
• the semiconductor cells are in the present example on the electrically insulating side of the carrier.
• a suitable material for realizing organic cells instead of depositing the semiconductor cells, it is also possible to carry out printing, vapor deposition or laminating, not shown here, of a suitable material for realizing organic cells.
• a polymer acting as an organic semiconductor in particular a conjugated polymer having a corresponding electronic structure or a specially synthesized hybrid material, is applied to the film-like carrier.
• the composite formed thereby is highly flexible, sufficiently thin and very easy to process, whereby the method steps described below can likewise be carried out without difficulty.
• electrically conductive carrier coating other conductive materials, in particular conductive polymers or conductive oxides such as For example, indium tin oxide (ITC 1 ) can be used. However, their electrical conductivity is lower compared to metallization.
• ITC 1 indium tin oxide
• the setting process shown in FIG. 1 is followed by an encapsulation step shown in FIG. 2 in the present example.
• the semiconductor cells located on the carrier are covered with a lamination 7.
• a lamination 7 for lamination can be used for example on a plastic film, which is applied in the course of a vacuum lamination.
• EVA ethylene vinyl acetate
• Both materials can be thermoformed over the entirety of the semiconductor cells. It is expedient if the lamination is made of the same material as the plastic film or tape 4a serving to fix the semiconductor cells.
• the use of reactive laminating materials is also possible, which may include: a.
• the laminating and encapsulation process shown in Fig. 2 can be combined as required with a laminate on a glass support of the later photovoltaic module, not shown here.
• the glass carrier is placed directly on the lamination, wherein the lamination simultaneously causes the connection of the composite of the semiconductor cells and the film on the glass substrate.
• the subsequent method steps are carried out in such a case on a practically finished photovoltaic module, on which only a back side contact is generated.
• the composite shown in FIG. 2 is expediently rotated, as shown in FIG. 3.
• the composite is now locally perforated at predetermined locations. The local perforation takes place in the example shown here by a laser drilling device 8.
• a breakthrough 10 is generated, in each case a contact area 3 is exposed.
• the breakthrough can be formed either punctiform or in the form of a line or surface. Both can be achieved by the laser drilling apparatus in a very simple manner.
• the locations for the local perforation on the composite of semiconductor cells and carriers are ascertained in advance by means of a transillumination method described in more detail below as part of an image acquisition.
• the laser drilling device accesses the determined
• Openings 10 filled with a conductive material In this case, the contacting of the contact areas on the semiconductor cells with the conductive carrier coating 5 forms.
• the conductive material in the form of a solder drop 10a made of a solder paste or a solder ball with the aid of a Lotismes 10b is brought to the openings provided for 10 and sold. Thereafter, a selective melting of the contact area and the solder paste or the solder ball takes place, wherein a contact tion 11 between the contact region 3 and the conductive carrier coating 5 forms.
• a laser soldering method can be used. It proves expedient to subject the holes produced in the perforation in advance in the carrier to a separate metallization in order to ensure proper wetting by the solder.
• the metallization can be carried out by steaming, printing or spraying.
• a pointwise or line-like printing or settling of paste or conductive ink can also take place.
• Any contacting operation can be carried out image-controlled, in which case the image recognition unit already used for the local perforation and / or the position data obtained thereby can be used.
• the laser drilling device bring in at a specific point the breakthrough, passed the case approached position to an adjusting the Lot Meins and moved to a next position, while at the newly generated breakthrough contacting is generated.
• the perforation and contacting in principle carried out within a single operation.
• a method for filling the apertures 10 can be provided with a conductive material, which ensure a reliable electrical contact 11 of the contact regions 3 to the semiconductor cells 1 with the conductive carrier coating 5.
• suitable spraying methods include cold gas spraying, plasma spraying with plasma jet, flame spraying with wire or rod,
• a heated process gas is expanded to supersonic speed by expansion in a Laval nozzle of a spray head
• the temperature of the process gas is below the melting point of the spray, so that the structure of the
• Sprayed material i. of the conductive material, advantageously not changed.
• the thermal load of the carrier is low.
• a clearly controllable spray jet geometry in most cases ensures the application of conductive material without the need for masking. Finally, this also hardly any loss of spray is achieved. If the AnAuthierung instead realized by plasma spraying, so passes from a plasma head with a plasma source, a plasma stream, a so-called. Plasmajet out, in which the conductive material was injected as a spray in the form of powder particles. The plasma jet entrains the powder particles and hurls them at the points to be contacted.
• the plasma spraying either in a normal atmosphere, inert atmosphere, in vacuum or, if necessary, even under water possible.
• So can be dispensed with a silver paste for the provision of solderable surfaces. This in turn results in the
• the positioning of the spray head in the cold gas spraying or plasma head in the plasma spraying corresponds to the positioning of the solder carrier 10b in Fig. 4, i.
• the solder carrier 10b with the solder drop 10a is to be replaced with the spray head or plasma head.
• the spray head or plasma head can also be moved from a current position to a next position with the same procedure as described above for the solder carrier 10b.
• a printing method may also be used, wherein as the conductive material, an ink or paste having high conductivity, in particular, a nano-Ag ink or paste may be used.
• the various spray methods described above As a result, filled openings 10 and a second conductor layer are produced.
• vapor deposition or plotting of the conductive material can take place. Expediently, the procedure is such that first the generated breakthroughs are filled by depositing conductive drops.
• the position data required for this purpose can be taken as described from a position memory or a control unit of the laser drilling device.
• the necessary interconnects between the individual contact points are calculated.
• the calculated paths are translated into control pulses, which in turn are transmitted to a start-up mechanism for a plot pen or a vapor deposition nozzle.
• the starting mechanism now moves the plotting pin or the vapor deposition nozzle over the cover layer 12.
• the plotting pin or the vapor deposition nozzle apply the conductive material 13 along the paths provided. They generate the second contacting plane for the arrangement of the semiconductor cells.
• the method steps explained with reference to FIG. 5 and FIG. 6 can in principle be executed several times. It is possible, in principle, to apply any number of contacting levels in addition and thus to achieve more complex interconnections of the semiconductor cells. Additional electronic components, in particular diodes, can be inserted in order, for example, to generate bypass diode circuits between the semiconductor cells.
• Fig. 7 shows a representation of the previously mentioned transillumination process.
• the transilluminator device provided for this purpose consists of a movable radiation source 14 for generating a radiation 15 penetrating the composite.
• the radiation source an X-ray source can be used.
• the radiation is detected by an array 16, wherein the array detects a fluoroscopic image of a semiconductor cell 1 located in the beam path.
• the raw data thus determined are transmitted to an image processing device 17, in particular a computer with an image processing program.
• the image processing device performs structure recognition on the fluoroscopic image, wherein the positions of the forms contained in the image are determined, stored and transferred to a control unit of the laser drilling device and / or the solder carrier and a correspondingly different device for applying the contacting planes.
• a schematic fluoroscopy image 18 of a section of a semiconductor cell is shown. Due to the increased absorption capacity of the metallized contact areas, these are in the form of clearly identifiable contours 19, whose position can be clearly determined.
• the image recognition of the contact areas can also be replaced or supplemented by a detection of a fiducial.
• semiconductor cells are deposited on the carrier, the unique, clearly in the X-ray image showing reference structures, the position of each exposed contact area with respect to the reference structures is known in advance and thus can be calculated from the position of the fiducial.
• cross structures which define a local coordinate system for each individual semiconductor cell can be used as the fiducial. This coordinate system is detected by the imaging process. The position of each individual contact area within the coordinate system is known in advance in each semiconductor cell. As a result, the contact areas can each be determined from the position of the fiducial, even if these areas do not show a contour in the fluoroscopic image.

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• 2010
  • 2010-04-14 DE DE102010027747A patent/DE102010027747A1/de not_active Ceased
  • 2010-10-26 CN CN2010800661451A patent/CN102834924A/zh active Pending
  • 2010-10-26 EP EP10774178A patent/EP2559058A2/de not_active Withdrawn
  • 2010-10-26 KR KR1020127029692A patent/KR101676078B1/ko active IP Right Grant
  • 2010-10-26 US US13/640,878 patent/US20130104957A1/en not_active Abandoned
  • 2010-10-26 WO PCT/EP2010/066122 patent/WO2011128001A2/de active Application Filing
  • 2010-10-26 JP JP2013504137A patent/JP5655212B2/ja not_active Expired - Fee Related

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