EP2510574B1 - Mikrowellenübergangsvorrichtung zwischen einer mikrostripleitung und einem rechteckigen wellenleiter - Google Patents

Mikrowellenübergangsvorrichtung zwischen einer mikrostripleitung und einem rechteckigen wellenleiter Download PDF

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Publication number
EP2510574B1
EP2510574B1 EP20100787756 EP10787756A EP2510574B1 EP 2510574 B1 EP2510574 B1 EP 2510574B1 EP 20100787756 EP20100787756 EP 20100787756 EP 10787756 A EP10787756 A EP 10787756A EP 2510574 B1 EP2510574 B1 EP 2510574B1
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EP
European Patent Office
Prior art keywords
waveguide
strip
line
metallic
board
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Not-in-force
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EP20100787756
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English (en)
French (fr)
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EP2510574A1 (de
Inventor
Michel Robin
Guillaume Tolleron
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Airbus DS SAS
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Airbus DS SAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
    • H01P5/107—Hollow-waveguide/strip-line transitions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.

Definitions

  • the present invention relates to passive components for the propagation of microwave waves. More particularly, it relates to a planar transition device between a microstrip conductor line and a component in rectangular waveguide technology.
  • Conductive micro-ribbon technology offers the possibility of integrating relatively easily microwave functions at frequencies of a few gigahertz, especially up to band C. This technology becomes more complex to use at higher frequencies, a few tens of gigahertz (Ku, K and Ka bands). Indeed, the radiating nature of a micro-ribbon line requires the confinement of the conductors in a conductive mechanical structure providing electrical shielding. The dimensions of this mechanical structure must be smaller as the frequency is high.
  • Air waveguides are in essence non-radiating structures, but do not lend themselves well to the integration of complex functions. Waveguides are therefore used for devices with low losses or for high microwave powers. By replacing the air with a relative permittivity dielectric greater than 1, the dimensions of the waveguide are sufficiently small to allow integration of a dielectric substrate waveguide ("Substrate Integrated Waveguide") to a micro-ribbon line.
  • a dielectric substrate waveguide (“Substrate Integrated Waveguide")
  • the article Integrated Microstrip and Rectangular Waveguide in Planar Form "by Dominic Deslanders and Ke Wu, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, Vol.11, No. 2, February 2001 , proposes a solution to the lossless transformation of the quasi-TEM propagation mode in the microstrip line to the transverse electric fundamental mode TE 10 of the waveguide.
  • the transition device according to this article comprises a single thin dielectric substrate in which are integrated a micro-ribbon line, a rectangular waveguide and a planar mode transformer between the line and the waveguide.
  • the mode transformer ensures, in addition to the transformation of the quasi-TEM mode into TE 10 mode, the electrical continuity between the line and the waveguide.
  • the mode transformer includes a conducting section in isosceles trapezium whose small base is merged with one end of the ribbon and the large base is merged with a central portion of the transverse song of a first large side of the guide. wave.
  • the other side of the dielectric substrate is entirely covered with a conductive layer serving as a ground plane at the line and a second long side at the waveguide.
  • the short longitudinal sides of the waveguide are made by two rows of metallized holes or by two metallized grooves formed in the dielectric substrate.
  • the structure of the transition device of the aforementioned article is used in the patent EP 1 376 746 B1 to integrate a rectangular waveguide microwave filter and a micro-ribbon line on the same thin dielectric substrate.
  • a transition between line and waveguide is known from the prior art WO210081060047 .
  • the objective of the invention is to associate, by means of a microwave transition device, a first technology of a micro-ribbon line with a second waveguide technology different from the first, while retaining the benefits of these two technologies.
  • a transition device comprising a mode transformer between a conductive ribbon line integrated in a printed circuit board, and a rectangular waveguide
  • the card comprises a housing containing the guide of a wave of which a large side is coplanar and coaxial with the ribbon of the line and the other large side is fixed on a metal layer of the card at the bottom of the housing, and the device has a gap spanned by a metal connecting element and located between the mode transformer and one of the elements including the line and the waveguide.
  • the mode transformer is integrated with the dielectric substrate of the card according to the first technology or the waveguide according to the second technology. If the mode transformer is integrated with the dielectric substrate of the board, the gap and the metal bonding element are located between the mode transformer and one end of the waveguide. If the mode transformer is integrated with the dielectric substrate of the waveguide, the gap and the metal connecting element are located between one end of the line to ribbon and fashion transformer. The gap results from a mechanical tolerance to introduce the structure of the waveguide in the housing of the card.
  • the metal bonding element which may comprise one or more foil tapes, or one or more metal wires, provides electrical continuity between the ribbon of the line and a long side of the waveguide via the mode transformer which adapts the impedances of the latter taking into account the mismatch created by the interstice spanned by the link element.
  • the impedances are adapted in the mode transformer by ribbon line sections whose ribbon widths and thicknesses, i.e. the distances between the micro-ribbon line and the ground plane, increase in steps. from the ribbon line to the waveguide and whose lengths are approximately equal to a quarter of a wavelength.
  • the technology of the micro-ribbon line like that of a multilayer printed circuit board, and waveguide manufacturing technology, such as SIW technology ("Substrate Integrated Waveguide "in English) on ceramic substrate, are preserved which gives more flexibility in the choice of characteristics of the line and the waveguide, such as in particular dielectric relative permittivities of the card and different waveguide .
  • the waveguide may be integrated in a microwave component having as substrate a ceramic; the short sides of the waveguide may each consist of staggered rows of metallized holes to reduce radiation losses.
  • the invention makes it possible to produce low-radiation, low-loss and low-mass microwave structures by eliminating a large part of the metal structure and is thus particularly attractive for airborne equipment. It allows the association of a micro-ribbon line to various rectangular waveguide structures, such as highly selective filters and high directivity couplers.
  • the invention is suitable for producing transmission or reception heads, or network or electronic scanning antennas, operating at high frequencies up to a few tens of gigahertz.
  • a transition device is a passive microwave circuit between a micro-ribbon line 1 integrated in a thin PCB 2 of the multilayer PCB type ("Printed Circuit Board" in English) and a microwave component 3 with a guide structure d rectangular wave between which a planar mode transformer 4 is provided.
  • two symmetrical transition devices with respect to the transverse plane of the microwave component 3 are arranged at the longitudinal ends of the component on the same card 2.
  • the component 3 is to be reported on the card 2 to best adapt to the dimensional characteristics and propagation of the micro-ribbon line 1.
  • the card 2 incorporating the micro-ribbon line 1 thus serves as a support for the component 3.
  • the printed circuit board 2 is a microwave circuit and has a thin cross section E compared to its width L.
  • the card comprises layers of dielectric substrate 20 between which are embedded internal metal layers superimposed under a first face from the menu.
  • the inner metal layers are a ground layer 12 for the line 1 and ground layers 21 to 23 under the layer 12 for the mode transformers 4, as will be explained below.
  • the metal layers 12, 21 and 22 extend over the entire width L of the card and in a depth b of the card equal to the height of the component 3.
  • the layer 23 located at the depth b and another metal layer mass 24 deposited on a second face of the card 2 are separated by a layer of the substrate 20 of thickness E - b and extend over the entire length and the entire width of the card.
  • the layers 23 and 24 constitute ground planes common to all the components supported by the card.
  • the various layers 12 and 21 to 24 are interconnected by numerous small metallized holes 25 perpendicular to the faces of the board.
  • the line 1 comprises a layer 10 of the substrate 20, a rectilinear metal strip 11 on the layer 10 at the first face of the card and along the longitudinal axis XX of the card, and a ground plane formed by the inner metal layer 12 underlying the portion of the first face of the card supporting the ribbon 11.
  • the substrate 20 is a dielectric of relatively low permittivity ⁇ r2 .
  • the width w of the ribbon 11 and the thickness e of the line are small, in particular with respect to the width L of the card and of the ground plane 12, so that the microphone line -Ruban 1 can propagate a guided wave in quasi-TEM mode in the centimeter wave range, especially for high frequencies of a few gigahertz to forty gigahertz to cover for example all or part of the frequency bands Ku, K and Ka.
  • Much of the energy propagates in the dielectric and a small portion propagates in the air near the strip conductor 11.
  • the characteristic impedance Z1 c of the micro-strip line typically 50 ⁇ , depends mainly the width w of the ribbon and the thickness e and the permittivity ⁇ r2 of the dielectric substrate used 20.
  • the line 1 is shielded by two metal layers 13 extending symmetrically with respect to the axis XX, coplanar with the strip 11 on the first face of the card 2 and running parallel to the ribbon 11 at a predetermined distance of a few widths w of the ribbon 11 to confine the electric field lines to the ribbon.
  • the shielding layers 13 are connected to the ground layers 12 and 21 to 24 by metallized holes 25.
  • the passive microwave component 3 is manufactured according to a waveguide 31-32 integrated waveguide (SIW) technology integrated in a dielectric substrate 33 with a rectangular section.
  • the rectangular section of the waveguide comprises long sides formed by two longitudinal metal layers 31s and 31i on the large faces of the substrate 33 and short sides formed by two pairs of peripheral longitudinal rows of metallized holes 321 and 322 arranged in staggered rows. and passing through the substrate 33.
  • the pairs of rows of holes 321 and 322 are symmetrical with respect to the longitudinal axial plane of the component 3.
  • the distance between two adjacent holes 321, 322 in each row is substantially equal to the diameter of the holes and substantially less than the operating wavelength of the waveguide to minimize radiation loss.
  • the width a of the waveguide is defined by the distance between the pairs of rows of metallized holes 321-322 in dependence on the dimensions of the holes and the pitch between the holes.
  • the height b of the waveguide in the direction of the thickness E of the card 2 is defined by the distance between the metal layers 31s and 31i.
  • the waveguide 31-32 is replaced by a conventional rectangular section waveguide 31-32 having solid metal walls and filled with the dielectric substrate 34.
  • the component 3 SIW manufacturing technology uses in the embodiment presented a low temperature ceramic ceramic (LTCC) process according to which the dielectric substrate 33 is a ceramic having a relative permittivity ⁇ r3 higher than that ⁇ r2 of the dielectric substrate 20 of the card 2 and therefore of that of the substrate layer 10 of the microstrip line 1.
  • LTCC low temperature ceramic ceramic
  • the dielectrics of the substrate 20 of the card 2 and the line 1 and the substrate 33 of the waveguide 31-32 may be of the same nature and have relative permittivities ⁇ r2 and ⁇ r3 identical.
  • the height b thereof is selected equal to the thickness 2.
  • a parallelepiped housing 26 for interposing with a transverse clearance the waveguide component 3 31-32 between ends of mode transformers 4.
  • the height of the housing 26 is equal to the height b of the waveguide and to the thickness between the metal strip 11 of the microstrip line 1 and the inner metal layer 23.
  • the outer face of the long side of the waveguide formed by the metal layer 31s is coplanar with the ribbon 11 of the line 1, and the outer face of the other large side of the waveguide formed by the metal layer 31i is in mechanical and electrical contact with the portion of the metal layer 23 at the housing background.
  • the portion of the card underlying the housing 26 of thickness E-b between the metal layers 23 and 24 is preserved to possibly include one or more microwave devices.
  • the length of the housing 26 is substantially greater than the length of the waveguide 31-32 and component 3 to facilitate its installation with a mechanical tolerance clearance.
  • the width of the housing 26 may be equal to the width L of the card to easily machine the card.
  • the width of the component 3 greater than the width a of the waveguide 31-32 is generally at most equal to that L of the card 2 and is determined as a function of the cutoff frequency of the TE mode 10 in the guide of FIG. wave which is a function of 2a.
  • the ratio a / b is about 10 to 15 and the waveguide is thus flat.
  • the component 3 with the waveguide 31-32 is centered in the housing 26 and fixed by brazing the metal layer 31 i on the portion of the metal layer 23 at the bottom of the housing 26, taking care to align the axial plane longitudinal waveguide symmetry with the longitudinal axis of symmetry XX of the ribbon 11 of the line 1.
  • the passive microwave component 3 with a rectangular waveguide planar structure 31-32 is a microwave bandpass filter comprising six pairs of metallized holes 34 crossing the dielectric substrate 33 and connected to the metal layers 31s and 31i. .
  • the pairs of metallized holes 34 are arranged symmetrically with respect to the longitudinal and transverse axial planes of the component.
  • the arrangement of the holes 34 constitutes inductive pillars depending on the frequency response of the filter.
  • the microwave component 3 is designed as a directional coupler.
  • the propagation mode transformer 4 in a transition device connects ends facing the ribbon 11 of the micro-ribbon line 1 and the long side 31s of the waveguide 31-32 coplanar with the ribbon 11, and connects the diaper internal ground plane 12 of the micro-ribbon line at the long side 31i of the waveguide 31-32 attached to the metal layer 23 at the bottom of the housing 26.
  • the mode transformer 4 progressively transforms by minimizing the losses the mode quasi-TEM of the micro-ribbon line 1 in a guided mode TE 10 of the waveguide 31-32 and adapts their impedances.
  • the planar structure of the mode transformer is designed to constitute a quasi-perfect quadrupole whose transmission parameters S 12 and S 21 at the terminals of the quadripole are approximately equal to 1 and whose reflection parameters S 11 and S 22 at the terminals of the quadrupole are approximately equal to 0, taking into account in practice, losses caused by conductors and imperfect dielectrics.
  • the mode transformer 4 can be integrated in the waveguide 31-32, or be integrated in the card 2, as described below and shown to the Figures 1 to 4 .
  • the characteristic impedance of a decreasing micro-ribbon line when the w / e ratio increases the mode transformer 4 comprises N microstrip line sections 21-41 to 2N-4N symmetrical with respect to the longitudinal plane of the line 1 having axis XX.
  • the number N is generally at least 1 and depends on the layered manufacturing technology of the board 2 and that of the microwave component 3.
  • the lengths of the sections of the mode transformer 4 are approximately equal to a quarter of the length of the wave of the central operating frequency and allow progressive impedance transformation by minimizing parasitic reflections at the junctions between the sections.
  • the bottom of the gap 5 is a small portion of the metal ground layer 23 providing electrical continuity between the ground planes 12, 21, 22 and 23 of the line 1 and line sections 21-41, 22-42 and 23-43, through the metallized holes 25, and the metal layer 31i of the component 3 attached to the underlying portion of the metal ground layer 23.
  • the lengths of the line sections are somewhat different from each other and can be each somewhat lower, equal to or somewhat greater than a quarter of the operating wavelength to compensate for interfering effects including wave reflection at various transitions, particularly at the gap 5, and to bring back by the transformer 4 an impedance equal ale to the characteristic impedance Z1 c of line 1, at the junction between this line and the first line section 21-41.
  • the line sections 21-41, 22-42 and 23-43 are shielded by symmetrical pairs of metal layers 47, 48 and 49 extending the shielding layers 13.
  • the shielding layers 47, 48 and 49 are coplanar with the ribbons 41, 42 and 43 on the first face of the card and parallel along these ribbons at the predetermined distance of a few widths w of the ribbon 11.
  • the shielding layers 47, 48 and 49 are respectively connected to the underlying layers of mass 12 and 21 to 24 through metallized holes 25.
  • the housing 26 formed in the card is much longer.
  • the arrangement of the line sections 21-41, 22-42 and 23-43 with the shielding layers 47, 48 and 49 and the width a of the waveguide remain.
  • the ribbons 41, 42 and 43 are derived from the same metal layer as the long side 31s of the guide and in electrical continuity therewith on the same face of the substrate 33 of the waveguide structure.
  • the dimensions of the line sections whose metal layers of mass are superimposed and integrated into the substrate 33 of the waveguide structure, which is then of the multilayer type, are modified according to in particular relative permittivity ⁇ r3 .
  • the air gap 5 is thus eliminated between the line section 23-43 and the waveguide 31-32 and replaced by an air gap due to the clearance necessary for the introduction of the monolithic component assembly. with both mode transformers in the card slot.
  • the air gap is located between the end of the ribbon line 1 and the line section 21-41 having the smallest ribbon and is spanned by a thin metal connecting element similar to the element 6, but width w, and brazed to the ribbons 11 and 41.
  • the method of manufacturing the transition device comprises the following steps.
  • the mode transformer 4 is integrated in the card, or in the second embodiment of the invention, the mode transformer is integrated into the structure as a guide. waveform of the component.
  • the parallelepipedal housing 26 is formed in the card 2 at a depth equal to the height b of the rectangular waveguide 31-32, for example by means of a matrix having the dimensions of the housing during the compression of the layers of the dielectric substrate 20 superimposed and coated with the various metal layers during the manufacture of the card, so that a portion of the inner mass layer 23 constitutes the bottom of the housing.
  • the rectangular waveguide 31-32 or in particular the component 3 having a rectangular waveguide structure, is introduced with longitudinal clearance and centered in the housing 26 so that the long side 31s of the waveguide is coplanar and coaxial with the ribbon 11 of the line 1 and the other large side 31i of the waveguide is fixed by brazing on the portion of the metal layer 23 of the card at the bottom of the housing.
  • the longitudinal clearance results from a mechanical tolerance for inserting the rectangular waveguide 31-32, or in particular the component 3, into the housing 26.

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  • Waveguides (AREA)
  • Waveguide Connection Structure (AREA)
  • Structure Of Printed Boards (AREA)
  • Non-Reversible Transmitting Devices (AREA)

Claims (10)

  1. Übergangsvorrichtung, umfassend einen Wellenformwandler (4) zwischen einer Streifenleitung (1), die in eine Leiterplatte (2) integriert ist, und einem rechteckigen Wellenleiter (31-32), dadurch gekennzeichnet, dass die Leiterplatte eine Aufnahme (26) umfasst, die den Wellenleiter enthält, von dem eine große Seite (31 s) koplanar und koaxial zu dem Streifen (11) der Leitung ist und die andere große Seite (31 i) an einem Teil einer Metallschicht (23) der Leiterplatte am Boden der Aufnahme befestigt ist und die Vorrichtung einen Zwischenraum (5) aufweist, der von einem metallischen Verbindungselement (6) überspannt ist und sich zwischen dem Wellenformwandler (4) und der großen Seite (31 s) des Wellenleiters, die zu dem Streifen (11) der Leitung koplanar und koaxial ist, befindet.
  2. Vorrichtung nach Anspruch 1, wobei das metallische Verbindungselement (6) ein oder mehrere nebeneinanderliegende Streifen aus Metallfolie oder mehrere nebeneinanderliegende Metalldrähte umfasst.
  3. Vorrichtung nach Anspruch 1 oder 2, wobei der Wellenformwandler (4) Streifenleitungsabschnitte (21-41, 22-42, 23-43) umfasst, deren Streifenbreiten und Dicken von der Streifenleitung (1) zu dem Wellenleiter (31-32) hin ansteigen und deren Längen annähernd gleich einem Viertel der Wellenlänge sind.
  4. Vorrichtung nach Anspruch 3, umfassend metallische Abschirmungsschichten (47, 48, 49), die an den Streifen (41, 42, 43) der Streifenleitungsabschnitte entlang führen und zu diesen Streifen koplanar sind und mit metallischen Abschirmungsschichten (13) verbunden sind, die an dem Streifen (11) der Leitung entlang führen und zu diesem koplanar sind.
  5. Vorrichtung nach einem der Ansprüche 1 bis 4, wobei die relativen Dielektrizitätskonstanten (10-20; 33) der Leiterplatte und des Wellenleiters (31-32) unterschiedlich sind.
  6. Vorrichtung nach einem der Ansprüche 1 bis 5, wobei der Wellenleiter (31-32) in eine Hyperfrequenzkomponente (3) integriert ist, deren Substrat (33) eine Keramik ist.
  7. Vorrichtung nach einem der Ansprüche 1 bis 6, wobei der Wellenleiter kleine Seiten aufweist, die jede durch Reihen versetzt angeordneter durchkontaktierter Bohrungen (331-332) gebildet sind.
  8. Verfahren zur Herstellung einer Übergangsvorrichtung, umfassend einen Wellenformwandler (4) zwischen einer Streifenleitung (1), die in eine Leiterplatte (2) integriert ist, und einen rechteckigen Wellenleiter (31-32), gekennzeichnet durch die folgenden Schritte:
    - Ausbilden in der Leiterplatte (2) einer Aufnahme (26), deren Boden von einem Teil einer Metallschicht (23) in der Leiterplatte bildet wird,
    - Einführen des Wellenleiters in die Aufnahme (26), damit eine große Seite (31 s) des Wellenleiters koplanar und koaxial zu dem Streifen (11) der Leitung ist und die andere große Seite (31 i) des Wellenleiters an dem Teil der Metallschicht befestigt ist, und
    - Bilden und Befestigen eines dünnen metallischen Verbindungselements (6), das einen Zwischenraum zwischen dem Wellenformwandler (4) und der großen Seite (31 s) des Wellenleiters, die zu dem Streifen (11) der Leitung koplanar und koaxial ist, überspannt.
  9. Verfahren nach Anspruch 8, umfassend eine Integrierung von Streifenleitungsabschnitten (21-41, 22-42 und 23-43) in die Karte, um den Wellenformwandler zu bilden, wobei die Streifenleitungsabschnitte jeweils metallische Masseschichten, die in der Karte übereinanderliegen, und Metallstreifen auf einer Fläche der Karte aufweisen und Streifenbreiten und Dicken haben, die von der Streifenleitung (1) zu dem Wellenleiter (31-32) hin ansteigen und deren Längen annähernd gleich einem Viertel der Wellenlänge sind, und eine Befestigung des metallischen Verbindungselements (6) an dem breitesten Streifen (43) der Leitungsabschnitte und an einer großen Seite (31 s) des Wellenleiters.
  10. Verfahren nach Anspruch 8, umfassend eine Integrierung von Streifenleitungsabschnitten (21-41, 22-42 und 23-43) in die Struktur des Wellenleiters (31-32), um den Wellenformwandler zu bilden, wobei die Streifenleitungsabschnitte metallische Masseschichten, die in der Struktur des Wellenleiters übereinanderliegen, bzw. Metallstreifen auf einer Fläche der Struktur des Wellenleiters aufweisen und Streifenbreiten und Dicken haben, die von der Streifenleitung (1) zu dem Wellenleiter (31-32) hin ansteigen und deren Längen annähernd gleich einem Viertel der Wellenlänge sind, und eine Befestigung des metallischen Verbindungselements (6) an dem Streifen (11) der Leitung und an dem schmalsten Band (41) der Leitungsabschnitte.
EP20100787756 2009-12-07 2010-12-06 Mikrowellenübergangsvorrichtung zwischen einer mikrostripleitung und einem rechteckigen wellenleiter Not-in-force EP2510574B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0958684A FR2953651B1 (fr) 2009-12-07 2009-12-07 Dispositif de transition hyperfrequence entre une ligne a micro-ruban et un guide d'onde rectangulaire
PCT/EP2010/069007 WO2011069980A1 (fr) 2009-12-07 2010-12-06 Dispositif de transition hyperfréquence entre une ligne à micro-ruban et un guide d'onde rectangulaire

Publications (2)

Publication Number Publication Date
EP2510574A1 EP2510574A1 (de) 2012-10-17
EP2510574B1 true EP2510574B1 (de) 2015-04-22

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US (1) US9088060B2 (de)
EP (1) EP2510574B1 (de)
JP (1) JP2013513274A (de)
KR (1) KR101750813B1 (de)
CN (1) CN102696145B (de)
AU (1) AU2010329983B2 (de)
CA (1) CA2781971C (de)
FR (1) FR2953651B1 (de)
IN (1) IN2012DN05034A (de)
TW (1) TWI509886B (de)
WO (1) WO2011069980A1 (de)

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IN2012DN05034A (de) 2015-10-09
CA2781971A1 (fr) 2011-06-16
FR2953651B1 (fr) 2012-01-20
CN102696145A (zh) 2012-09-26
US9088060B2 (en) 2015-07-21
AU2010329983A1 (en) 2012-06-14
TWI509886B (zh) 2015-11-21
JP2013513274A (ja) 2013-04-18
AU2010329983B2 (en) 2015-07-30
TW201140937A (en) 2011-11-16
CA2781971C (fr) 2017-08-01
KR101750813B1 (ko) 2017-06-26
CN102696145B (zh) 2015-05-13
US20120242421A1 (en) 2012-09-27
KR20120117761A (ko) 2012-10-24
EP2510574A1 (de) 2012-10-17
FR2953651A1 (fr) 2011-06-10
WO2011069980A1 (fr) 2011-06-16

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