EP2418260A1 - Composition de polissage - Google Patents

Composition de polissage Download PDF

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Publication number
EP2418260A1
EP2418260A1 EP11186467A EP11186467A EP2418260A1 EP 2418260 A1 EP2418260 A1 EP 2418260A1 EP 11186467 A EP11186467 A EP 11186467A EP 11186467 A EP11186467 A EP 11186467A EP 2418260 A1 EP2418260 A1 EP 2418260A1
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EP
European Patent Office
Prior art keywords
polishing
polishing composition
silicon oxide
mass
particle diameter
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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EP11186467A
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German (de)
English (en)
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EP2418260B1 (fr
Inventor
Tsuyoshi Matsuda
Tatsuhiko Hirano
Junhui Oh
Atsunori Kawamura
Kenji Sakai
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Fujimi Inc
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Fujimi Inc
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Priority claimed from JP2003342530A external-priority patent/JP4608196B2/ja
Priority claimed from JP2003352952A external-priority patent/JP2005116987A/ja
Priority claimed from JP2003394593A external-priority patent/JP4759219B2/ja
Priority claimed from JP2003396171A external-priority patent/JP4406554B2/ja
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of EP2418260A1 publication Critical patent/EP2418260A1/fr
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Publication of EP2418260B1 publication Critical patent/EP2418260B1/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/023—Preparation by reduction of silica or free silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K8/00—Compositions for drilling of boreholes or wells; Compositions for treating boreholes or wells, e.g. for completion or for remedial operations
    • C09K8/52—Compositions for preventing, limiting or eliminating depositions, e.g. for cleaning
    • C09K8/528—Compositions for preventing, limiting or eliminating depositions, e.g. for cleaning inorganic depositions, e.g. sulfates or carbonates
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Definitions

  • the present invention relates to a polishing composition to be used, for example, in polishing for forming wiring in a semiconductor device.
  • a high-integration and high-speed ultra large scale integrated circuit is manufactured in accordance with a fine design rule. Recently, in order to suppress an increase in wiring resistance, caused by finer wiring in a semiconductor device, a copper containing metal has been increasingly used as a wiring material.
  • wiring made of the copper containing metal is formed by the Chemical Mechanical Polishing (CMP) process in the following manner.
  • CMP Chemical Mechanical Polishing
  • a barrier film made of a compound containing tantalum is provided on an insulating film having trenches.
  • a conductive film made of the copper containing metal is provided on the barrier film so as to at least fill up the trenches.
  • part of the portion of the conductive film, which is positioned outside the trenches is removed by CMP.
  • another part of the portion of the conductive film, which is positioned outside the trenches is removed by CMP so that the top surface of the barrier film is exposed.
  • the residue of the portion of the conductive film, which is positioned outside the trenches, and the portion of the barrier film, which is positioned outside the trenches, are removed by CMP so that the top surface of the insulating film is exposed. Consequently, the portion of the conductive film, which is positioned in the trenches, is left on the insulating film and will act as the wiring.
  • Japanese Laid-Open Patent Publication No. 2000-160141 discloses a first conventional polishing composition, which comprises an abrasive, alpha-alanine, hydrogen peroxide, and water.
  • Japanese Laid-Open Patent Publication No. 11-21546 discloses a second conventional polishing composition, which comprises an abrasive, an oxidant, a complexing agent, such as citric acid, and a film forming agent, such as imidazole.
  • Japanese Laid-Open Patent Publication No. 6-313164 discloses a third conventional polishing composition, which comprises an abrasive comprising aqueous colloidal silica and a polishing accelerator comprising a persulfate.
  • a fourth conventional polishing composition which comprises an abrasive having a primary particle diameter of 50 to 120 nm, a compound of alpha-alanine or the like for forming a chelate with a copper ion, a film forming agent, such as benzotriazole, hydrogen peroxide, and water.
  • the abrasive acts to mechanically polish an object to be polished.
  • Alpha-alanine and the complexing agent act to promote polishing of an object to be polished which is made of the copper containing metal.
  • the polishing composition to be used in polishing for forming wiring in a semiconductor device, includes: a surfactant; a silicon oxide; at least one selected from the group consisting of carboxylic acid and alpha-amino acid; a corrosion inhibitor; an oxidant; and water.
  • the surfactant contains at least one selected from the compounds, each represented by any of general formulas (1) to (7), and the salts thereof.
  • R 1 represents an alkyl group having 8 to 16 carbon atoms
  • R 2 represents a hydrogen atom, a methyl group, or an ethyl group
  • R 3 represents an alkylene group having 1 to 8 carbon atoms, - (CH 2 CH 2 O) 1 -, - (CH 2 CH(CH 3 )O) m -, or a combination of at least two of those.
  • 1 and m are integers of 1 to 8 when R 3 represents - (CH 2 CH 2 O) 1 - or -(CH 2 CH(CH 3 )O) m -.
  • R 3 represents the combination of -(CH 2 CH 2 O) 1 - and -(CH 2 CH(CH 3 )O) m -.
  • X 1 represents a carboxy group or a sulfone group
  • R 4 represents an alkyl group having 8 to 16 carbon atoms
  • Z is a functional group represented by chemical formula (i) or (ii)
  • Y 1 represents - (CH 2 CH 2 O) n -, - (CH 2 CH(CH 3 )O) p -, or the combination of - (CH 2 CH 2 O) n -and - (CH 2 CH(CH 3 )O) p -.
  • n and p are integers of 1 to 6 when Y 1 represents - (CH 2 CH 2 O) n - or - (CH 2 CH(CH 3 )O) p -.
  • the sum of n and p is 6 or less when Y 1 represents the combination of - (CH 2 CH 2 O) n -and - (CH 2 CH(CH 3 )O) p -.
  • X 2 represents a phosphate group or a sulfone group.
  • each of R 3 and R 6 represents a hydrogen atom, a hydroxy group, or an alkyl group having 8 to 16 carbon atoms
  • each of Y 2 and Y 3 represents - (CH 2 CH 2 O) q -, -(CH 2 CH(CH 3 )O) r -, or the combination of - (CH 2 CH 2 O) q - and - (CH 2 CH(CH 3 )O) r -.
  • q and r are integers of 1 to 6 when Y 2 or Y 3 represents - (CH 2 CH 2 O) q - or - (CH 2 CH(CH 3 )O) r -.
  • the sum of q and r is an integer of 6 or less when Y 2 or Y 3 represents the combination of - (CH 2 CH 2 O) q - and - (CH 2 CH(CH 3 )O) r -.
  • the present invention provides another polishing composition.
  • the polishing composition to be used in polishing for forming wiring in a semiconductor device, includes: alpha-amino acid; a benzotriazole derivative represented by general formula: where R 14 represents an alkyl group having a carboxy group, an alkyl group having a hydroxy group and a tert-amino group, an alkyl group having a hydroxy group, or an alkyl group other than those; a silicon oxide; a surfactant; an oxidant; and water.
  • the present invention provides still another polishing composition.
  • the polishing composition to be used in polishing for forming wiring in a semiconductor device, includes: a silicon oxide; at least one selected from the group consisting of carboxylic acid and alpha-amino acid; a corrosion inhibitor; a surfactant; a persulfate; and water.
  • the polishing composition further includes an aluminum ion.
  • the pH of the polishing composition is not less than 7 and less than 12.
  • the present invention provides yet another polishing composition.
  • the polishing composition to be used in polishing for forming wiring in a semiconductor device, includes: a first silicon oxide having a 50-percent particle diameter D50 of 60 to 150 nm, which is measured by laser diffraction scattering; a second silicon oxide having a 50-percent particle diameter D50 of 10 to 50 nm, which is measured by laser diffraction scattering; at least one selected from the group consisting of carboxylic acid and alpha-amino acid; a corrosion inhibitor; a surfactant; an oxidant; and water.
  • a method for forming wiring in a semiconductor device will be described.
  • a barrier film 14 and a conductive film 15 are first formed on an insulating film 12 having trenches 13.
  • the insulating film 12 may be a SiO 2 film, formed using tetraethoxysilane (TEOS) by the Chemical Vapor Deposition (CVD) method, a SiOF film or SiOC film.
  • TEOS tetraethoxysilane
  • CVD Chemical Vapor Deposition
  • SiOF SiOF
  • SiOC SiOC film.
  • the trenches 13 are formed for example by the known lithography and pattern etching techniques so as to have a prescribed design pattern.
  • the barrier film 14 is formed on the insulating film 12 so as to cover the surface thereof in advance of formation of the conductive film 15.
  • the barrier film 14 is formed, for example, by a sputtering method. It is preferable that the barrier film 14 have a sufficiently small thickness as compared to the depth of the trenches 13.
  • the barrier film 14 is formed for example of tantalum or a tantalum-containing compound, such as tantalum nitride.
  • the conductive film 15 is provided on the barrier film 14 so as to at least fill up the trenches 13.
  • the conductive film 15 is formed for example by the Physical Vapor Deposition (PVD) method.
  • the conductive film 15 is formed for example of a copper containing metal.
  • the copper containing metal may be copper, a copper-aluminum alloy or a copper-titanium alloy.
  • the conductive film 15 that is formed on the insulating film 12 having the trenches 13 typically comprises, on the top surface, initial concave portions 16 to correspond to the trenches 13.
  • the barrier film 14 serves to prevent copper in the conductive film 15 (the wiring 17) from diffusing in the insulating film 12.
  • the polishing composition according to the first embodiment is for example used in CMP in the second polishing process.
  • This polishing composition comprises: an ingredient (a) comprising a surfactant; an ingredient (b) comprising a silicon oxide; an ingredient (c) comprising at least one selected from the group consisting of carboxylic acid and alpha-amino acid; an ingredient (d) comprising a corrosion inhibitor; an ingredient (e) comprising an oxidant; and an ingredient (f) comprising water.
  • the ingredient (a), namely the surfactant, contains at least one selected from the compounds, each represented by any of general formulas (1) to (7), and the salt thereof.
  • the surfactant preferably contains at least one selected from the first group consisting of compounds, each represented by any of general formulas (1) to (7), and the salt thereof, and at least one selected from the second group consisting of compounds, each represented by any of general formulas (8) and (9), and the salt thereof.
  • R 1 represents an alkyl group having 8 to 16 carbon atoms.
  • R 2 represents a hydrogen atom, a methyl group, or an ethyl group.
  • R 3 represents an alkylene group having 1 to 8 carbon atoms, - (CH 2 CH 2 O) 1 -, - (CH 2 CH(CH 3 )O) m -, or a combination of at least two of those.
  • 1 and m are integers of 1 to 8 when R 3 represents - (CH 2 CH 2 O) 1 - or - (CH 2 CH(CH 3 )O) m -, and the sum of 1 and m is 8 or less when R 3 represents the combination of -(CH 2 CH 2 O) 1 - and - (CH 2 CH(CH 3 )O) m -, namely R 3 represents a group formed by removing a hydrogen atom from a copolymer of ethylene oxide and propylene oxide.
  • X 1 represents a carboxy group or a sulfone group.
  • R 4 represents an alkyl group having 8 to 16 carbon atoms.
  • Z is a functional group represented by chemical formula (i) or (ii).
  • Y 1 represents - (CH 2 CH 2 O) n -, - (CH 2 CH(CH 3 )O) p -, or the combination of - (CH 2 CH 2 O) n -and - (CH 2 CH(CH 3 )O) p -.
  • n and p are integers of 1 to 6 when Y 1 represents - (CH 2 CH 2 O) n - or - (CH 2 CH(CH 3 )O) p -, and the sum of n and p is an integer of 6 or less when Y 1 represents the combination of - (CH 2 CH 2 O) n - and - (CH 2 CH(CH 3 )O) p -, namely Y 1 represents a group formed by removing a hydrogen atom from a copolymer of ethylene oxide and propylene oxide.
  • X 2 represents a phosphate group or a sulfone group.
  • each of R 3 and R 6 represents a hydrogen atom, a hydroxy group or an alkyl group having 8 to 16 carbon atoms.
  • Each of Y 2 and Y 3 represents - (CH 2 CH 2 O) q -, - (CH 2 CH(CH 3 )O) r -, or the combination of - (CH 2 CH 2 O) q -and -(CH 2 CH(CH 3 )O) r -.
  • q and r are integers of 1 to 6 when Y 2 or Y 3 represents - (CH 2 CH 2 O) q - or -(CH 2 CH(CH 3 )O) r -, and the sum of q and r is an integer of 6 or less when Y 2 or Y 3 represents the combination of - (CH 2 CH 2 O) q - and - (CH 2 CH(CH 3 )O) r -.
  • R 7 represents an alkyl group having 8 to 16 carbon atoms.
  • Y 4 represents - (CH 2 CH 2 O) s -, -(CH 2 CH(CH 3 )O) t -, or the combination of - (CH 2 CH 2 O) s - and - (CH 2 CH(CH 3 )O) t -.
  • s and t are integers of 2 to 30 when Y 4 represents - (CH 2 CH 2 O) s - or - (CH 2 CH(CH 3 )O) t -, and the sum of s and t is an integer of 30 or less when Y 4 represents the combination of - (CH 2 CH 2 O) s - and - (CH 2 CH(CH 3 )O) t -.
  • each of R 8 to R 13 represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms.
  • Each of Y 5 and Y 6 represents - (CH 2 CH 2 O) u - or - (CH 2 CH(CH 3 )O) v -.
  • u and v are integers of 1 to 20.
  • the salt of the compound represented by any of general formulas (1) to (9) may be exemplified by alkali metal salts, such as an ammonium salt and a sodium salt, and a triethanolamine salt.
  • alkali metal salts such as an ammonium salt and a sodium salt, and a triethanolamine salt.
  • the compound represented by any of general formulas (1) to (8) and the salt thereof are anion surfactants.
  • the compound represented by general formula (9) and the salt thereof are nonion surfactants.
  • palm oil fatty acid sarcosine triethanolamine represented by chemical formula (10
  • palm oil fatty acid methyltaurine sodium represented by chemical formula (11)
  • polyoxyethylene palm oil fatty acid monoethanolamide sodium sulfate represented by chemical formula (12).
  • polyoxyethylene lauryl ether sulfate triethanolamine represented by chemical formula (17)
  • diisobutyl dimethyl butynediol polyoxyethylene glycol ether represented by chemical formula (18)
  • a compound selected from the first group or the second group namely a compound represented by any of general formulas (1) to (9), and the salt thereof, act to suppress the occurrence of the dishing by reducing the depth of the dishing.
  • the depth of the dishing is the difference "d" between the level of the top surface of the conductive film 15 left on the insulating film 12 and the level of the top surface of the part of the barrier film 14, which is positioned outside the trenches 13.
  • the compound selected from the first group has a slightly stronger action to suppress the occurrence of the dishing, but has a markedly stronger action to suppress polishing of the copper containing metal. This makes it less possible to suppress polishing of the copper containing metal too strongly when the surfactant comprises at least one compound selected from the first group and at least one compound selected from the second group than when the surfactant comprises only at least one compound selected from the first group.
  • the content of the surfactant in the polishing composition is preferably in the range of 0.025 to 0.2 mass%, and more preferably in the range of 0.03 to 0.1 mass%.
  • the content of the surfactant is less than 0.025 mass%, the depth of the dishing is not largely reduced, and the occurrence of the dishing thus might not be suppressed.
  • the content of the surfactant is more than 0.2 mass%, polishing of the copper containing metal is suppressed too strongly, and hence the conductive film 15 to be removed might be left on the insulating film 12 after polishing.
  • a mass ratio of the compound selected from the first group contained in the surfactant to the compound selected from the second group contained in the surfactant is preferably from one first to ten firsts (1/1 to 10/1).
  • the ratio is less than one first, the occurrence of the dishing might not be much suppressed.
  • the ratio is more than ten firsts, polishing of the copper containing metal is suppressed too strongly, and hence the conductive film 15 to be removed might be left on the insulating film 12 after polishing.
  • the silicon oxide may for example be colloidal silica, fumed silica, or precipitated silica. Among them, colloidal silica and fumed silica are preferable since each of them has a high ability to polish the copper containing metal, and colloidal silica is more preferable.
  • the polishing composition may contain two kinds or more of silicon oxides.
  • the mean particle diameter D N4 of the silicon oxide which is measured by laser diffraction scattering, is preferably in the range of 0.01 to 0.5 ⁇ m, and more preferably in the range of 0.03 to 0.3 ⁇ m.
  • the mean particle diameter D N4 of the silicon oxide is less than 0.01 ⁇ m, the action of the silicon oxide to mechanically polish an object to be polished is so weak that the conductive film 15 to be removed might be left on the insulating film 12 after polishing.
  • the mean particle diameter D N4 of the silicon oxide is more than 0.5 ⁇ m, the ability of the polishing composition to polish the copper containing metal is too high, which might cause an increase in depth of the dishing.
  • the polishing composition since the silicon oxide having the mean particle diameter D N4 more than 0.5 ⁇ m tends to settle out, the dispersion stability of the polishing composition might decline. Moreover, since the polishing composition has a stronger ability to polish the barrier film 14 and the insulating film 12 as well as the conductive film 15, a phenomenon called erosion might occur, where the level of the top surface of the region in which the trenches 13 are densely formed, namely the level of the top surface of the wiring region, becomes lower than the level of the top surface of the region other than the wiring region. The degree of the erosion is expressed taking the depth of the erosion as an index. As shown in Fig.
  • the depth of the erosion is the difference "e" between the level of the top surface of the wiring region and the level of the top surface of the region other than the wiring region.
  • the erosion causes more difficulty in increasing the wiring resistance and forming multi-filmed wiring.
  • the content of the silicon oxide in the polishing composition is preferably in the range of 0.01 to 10 mass%, and more preferably in the range of 0.1 to 3 mass%.
  • the content of the silicon oxide is less than 0.01 mass%, the ability of the polishing composition to polish an object to be polish is insufficient, and hence the conductive film 15 to be removed might be left on the insulating film 12 after polishing.
  • the content of the silicon oxide is more than 10 mass%, the ability of the polishing composition to polish an object to be polished is too high, which might lead to promotion of the dishing or erosion.
  • the number of carbon atoms in the molecule of the carboxylic acid or the alpha-amino acid is preferably not more than 10.
  • the specific examples of the carboxylic acid may include citric acid, nitric acid, succinic acid, maleic acid, and tartaric acid.
  • Carboxylic acid may be either monocarboxylic acid or dicarboxylic acid, and may comprise an amino group or a hydroxy group.
  • alpha-amino acid may include glycin, alanine, and valine. Since acting to reduce the depth of the dishing, alpha-amino acid is more preferable than carboxylic acid, and alanine is more preferable.
  • the content of the acid in the polishing composition is preferably in the range of 0.01 to 2 mass%, and more preferably in the range of 0.4 to 1.5 mass%.
  • the content of the acid is less than 0.01 mass%, the ability of the polishing composition to polish the copper containing metal is insufficient, and thereby the conductive film 15 to be removed might be left on the insulating film 12 after polishing.
  • the content of the acid is more than 2 mass%, the concentration of the acid is too high, and thereby the ability of the polishing composition to polish the copper containing metal might decrease or the dishing might occur.
  • the corrosion inhibitor also acts to suppress the occurrence of the dishing by suppressing excessive polishing of the conductive film 15.
  • the specific examples of the corrosion inhibitor may include the benzotriazoles represented by general formula (19), namely benzotriazole and the derivative thereof.
  • the respective carbon atoms at positions 4, 5, 6 and 7 may be replaced with nitrogen atoms, or the nitrogen atom at position 1 may be replaced with a carbon atom.
  • R 14 represents a hydrogen atom, an alkyl group having a carboxy group, an alkyl group having a hydroxy group and a tert-amino group, an alkyl group having a hydroxy group, or an alkyl group other than those.
  • R 15 to R 18 respectively represent a hydrogen atom or an alkyl group.
  • R 14 represents an alkyl group having a carboxy group, an alkyl group having a hydroxy group and a tert-amino group, an alkyl group having a hydroxy group, or an alkyl group other than those.
  • the benzotriazole derivative, represented by general formula (20) where R 14 is an alkyl group having a carboxy group, includes the compound represented by general formula (21).
  • the specific examples of compound represented by general formula (21) may include 1-(1,2-dicarboxyethyl)benzotriazole, represented by chemical formula (22).
  • the benzotriazole derivative represented by general formula (20) where R 14 is an alkyl group having a hydroxy group and a tert-amino group, includes the compound represented by general formula (23).
  • the specific example of the compound represented by general formula (23) may include 1-[N,N-bis(hydroxyethyl)aminomethyl]benzotriazole, represented by chemical formula (24).
  • the benzotriazole derivative represented by general formula (20) where R 14 is an alkyl group having a hydroxy group, includes the compound represented by general formula (25) and the compound represented by general formula (26).
  • the specific examples of the compound represented by general formula (25) and the compound represented by general formula (26) may respectively include: 1-(2,3-dihydroxypropyl)benzotriazole, represented by chemical formula (27); and 1-(hydroxymethyl)benzotriazole, represented by chemical formula (28).
  • Y 7 represents an alkylene group.
  • the polishing composition may include two kinds or more of corrosion inhibitors.
  • corrosion inhibitors described above 1-[N,N-bis(hydroxyethyl)aminomethyl]benzotriazole, represented by chemical formula (24), is most preferable since it acts particularly strongly to protect the surface of the conductive film 15.
  • the content of the corrosion inhibitor is preferably not more than 0.1 mass%.
  • the content of the corrosion inhibitor in the polishing composition is preferably in the range of 0.000001 to 0.001 mass%, and more preferably in the range of 0.00003 to 0.0005 mass%.
  • the corrosion inhibitor is 1-[N,N-bis(hydroxyethyl)aminomethyl]benzotriazole
  • the content of the corrosion inhibitor in the polishing composition is preferably in the range of 0.00005 to 0.005 mass%, and more preferably in the range of 0.0001 to 0.001 mass%.
  • the content of the corrosion inhibitor in the polishing composition is preferably in the range of 0.001 to 0.1 mass%, and more preferably in the range of 0.003 to 0.05 mass%.
  • the content of the corrosion inhibitor in the polishing composition is preferably in the range of 0.0005 to 0.01 mass%, and more preferably in the range of 0.002 to 0.008 mass%.
  • the content of the corrosion inhibitor When the content of the corrosion inhibitor is too small, the action of protecting the surface of the conductive film 15 and the action of suppressing the occurrence of the dishing are insufficiently exerted, which might result in production of the roughness or promotion of the dishing on the surface of the conductive film 15 after polishing.
  • the content of the corrosion inhibitor is too large, the ability of the polishing composition to polish the copper containing metal is insufficient, and hence the conductive film 15 to be removed might be left on the insulating film 12 after polishing.
  • the oxidant may be a persulfate, such as ammonium persulfate, potassium persulfate, or sodium persulfate, periodic acid, peracetic acid, perchloric acid, ammonium percarbonate, or hydrogen peroxide.
  • the persulfate is preferable, and ammonium persulfate is more preferable.
  • the content of the oxidant in the polishing composition is preferably in the range of 0.5 to 10 mass%, and more preferably in the range of 1 to 5 mass%.
  • the content of the oxidant is less than 0.5 mass%, the ability of the polishing composition to polish the copper containing metal is insufficient, and thereby the conductive film 15 to be removed might be left on the insulating film 12.
  • the content of the oxidant is more than 10 mass%, the ability of the polishing composition to polish the copper containing metal is too high, which might cause an increase in depth of the dishing.
  • Water preferably contains as few impurities as possible. Specifically, pure water, obtained by removing impurity ions with an ion-exchange resin and then contaminants through a filter, ultrapure water, or distilled water is preferable.
  • Water is added with the ingredients (a) to (e), followed by mixing, to prepare a polishing composition.
  • a blade-type agitator, an ultrasonic disperser or the like may be used.
  • the pH of the polishing composition is preferably not less than 7, more preferably from 7 to 12, and most preferably from 8 to 10.
  • the pH of the polishing composition is less than 7, the ability of the polishing composition to polish the copper containing metal might decrease.
  • the pH of the polishing composition is more than 12, the ability of the polishing composition to polish the copper containing metal is too high, which might lead to promotion of the dishing.
  • the pH of the polishing composition may be adjusted by addition of ammonia to the polishing composition.
  • a polishing pad is pressed onto the surface of the conductive film 15 and then rolled while the polishing composition is provided to the surface of the conductive film 15.
  • the polishing composition according to the first embodiment can suppress the occurrence of the dishing by the actions of the surfactant and the corrosion inhibitor contained therein. Further, the ability of the polishing composition to polish the copper containing metal is improved by the actions of the oxidant and at least one selected from the group consisting of carboxylic acid and alpha-amino acid in the polishing composition.
  • a polishing composition according to the second embodiment is also used in CMP in the second polishing process.
  • the polishing composition according to the second embodiment comprises; an ingredient (a) comprising alpha-amino acid; an ingredient (b) comprising a benzotriazole derivative; an ingredient (c) comprising a silicon oxide; an ingredient (d) comprising a surfactant; an ingredient (e) comprising an oxidant; and an ingredient (f) comprising water.
  • Alpha-amino acid also acts to form a chelate bond with copper, whereby the ability of the polishing composition to polish the copper containing metal is improved.
  • the specific examples of the alpha-amino acid may include alanine, glycin, and valine. Among them, alanine is most preferable since it strongly acts to reduce the depth of the dishing and also has high solubility to water.
  • the polishing composition may contain two kinds or more of alpha-amino acids.
  • the content of alpha-amino acid in the polishing composition is preferably in the range of 0.01 to 2 mass%, and more preferably from 0.4 to 1.5 mass%.
  • the content of the alpha-amino acid is less than 0.01 mass%, the depth of the dishing is not sufficiently reduced, and the occurrence of the dishing thus might not be suppressed.
  • the content of the alpha-amino acid is more than 2 mass%, the ability of the polishing composition to polish the copper containing metal decrease, and thereby the conductive film 15 to be removed might be left on the insulating film 12 after polishing.
  • the ingredient (b), namely the benzotriazole derivative, is represented by general formula (29).
  • the benzotriazole derivative acts to prevent corrosion of the surface of the conductive film 15 by protecting the copper containing metal from corrosion due to the oxidant.
  • the benzotriazole derivative also acts to suppress the occurrence of the dishing by suppressing excessive polishing of the conductive film 15.
  • R represents an alkyl group having a carboxy group, an alkyl group having a hydroxy group and a tert-amino group, an alkyl group having a hydroxy group, or an alkyl group other than those.
  • the benzotriazole derivative represented by general formula (29) where R is an alkyl group having a carboxy group, includes the compound represented by general formula (21).
  • the specific example of the compound represented by general formula (21) may include 1-(1,2-dicarboxyethyl)benzotriazole, represented by chemical formula (22).
  • the benzotriazole derivative represented by general formula (29) where R is an alkyl group having a hydroxy group and a tert-amino group, includes the compound represented by general formula (23).
  • the specific example of the compound represented by general formula (23) may include 1-[N,N-bis(hydroxyethyl)aminomethyl]benzotriazole, represented by chemical formula (24).
  • the benzotriazole derivative represented by general formula (29) where R is an alkyl group having a hydroxy group, includes the compound represented by general formula (25) and the compound represented by general formula (26).
  • the specific examples of the compound represented by general formula (25) and the compound represented by general formula (26) may respectively include: 1-(2,3-dihydroxypropyl)benzotriazole, represented by chemical formula (27); and 1-(hydroxymethyl)benzotriazole, represented by chemical formula (28).
  • the polishing composition may comprise two kinds or more of benzotriazole derivatives.
  • benzotriazole derivatives described above the compounds respectively represented by general formulas (21), (23), (25), and (26) are preferable since they strongly act to protect the surface of the conductive film 15.
  • the content of the benzotriazole derivative is preferably not more than 0.1 mass%.
  • the content of the benzotriazole derivative in the polishing composition is preferably in the range of 0.0005 to 0.01 mass%, and more preferably in the range 0.002 to 0.008 mass%.
  • the content of the benzotriazole derivative in the polishing composition is preferably in the range of 0.00005 to 0.005 mass%, and more preferably in the range of 0.0001 to 0.001 mass%.
  • the content of the benzotriazole derivative in the polishing composition is preferably in the range of 0.001 to 0.1 mass%, and more preferably in the range of 0.003 to 0.05 mass%.
  • the content of the benzotriazole derivative When the content of the benzotriazole derivative is too small, the action of protecting the surface of the conductive film 15 and the action of suppressing the occurrence of the dishing are insufficiently exerted, which might result in production of the roughness or promotion of the dishing on the surface of the conductive film 15 after polishing.
  • the content of the benzotriazole derivative is too large, the ability of the polishing composition to polish the copper containing metal is insufficient, and thereby the conductive film 15 to be removed might be left on the insulating film 12 after polishing.
  • the silicon oxide may for example be colloidal silica, fumed silica, or precipitated silica. Among them, colloidal silica and fumed silica are more preferable since each of them has a high ability to polish the copper containing metal, and colloidal silica is most preferable.
  • the polishing composition may contain two kinds or more of silicon oxides.
  • the mean particle diameter D N4 of the silicon oxide which is measured by laser diffraction scattering, is preferably in the range of 0.01 to 0.5 ⁇ m, and more preferably in the range of 0.03 to 0.3 ⁇ m.
  • the mean particle diameter D N4 of the silicon oxide is less than 0.01 ⁇ m, the action of the silicon oxide to mechanically polish an object to be polished is so weak that the conductive film 15 to be removed might be left on the insulating film 12 after polishing.
  • the mean particle diameter D N4 of the silicon oxide is more than 0.5 ⁇ m, the ability of the polishing composition to polish the copper containing metal is too high, which might cause an increase in depth of the dishing.
  • the polishing composition since the silicon oxide having the mean particle diameter D N4 more than 0.5 ⁇ m tends to settle out, the dispersion stability of the polishing composition might decline. Moreover, the polishing composition has a stronger ability to polish the barrier film 14 and the insulating film 12 as well as the conductive film 15, which might promote the erosion.
  • the content of the silicon oxide in the polishing composition is preferably in the range of 0.01 to 10 mass%, and more preferably in the range of 0.1 to 3 mass%.
  • the content of the silicon oxide is less than 0.01 mass%, the ability of the polishing composition to polish an object to be polish is insufficient, and thereby the conductive film 15 to be removed might be left on the insulating film 12 after polishing.
  • the content of the silicon oxide is more than 10 mass%, the ability of the polishing composition to polish an object to be polished is too high, which might lead to promotion of the dishing or erosion.
  • the specific examples of the surfactant may include: palm oil fatty acid sarcosine triethanolamine, represented by chemical formula (10); palm oil fatty acid methyltaurine sodium, represented by chemical formula (11); polyoxyethylene palm oil fatty acid monoethanolamide sodium sulfate, represented by chemical formula (12); polyoxyethylene alkyl phenyl ether phosphate, represented by chemical formula (13); triethanolamine dodecylbenzenesulfonate, represented by chemical formula (14); polyoxyethylene alkyl sulfosuccinate disodium, represented by chemical formula (15); dioctyl sulfosuccinate, represented by chemical formula (16); polyoxyethylene lauryl ethereal sulfate triethanolamine, represented by chemical formula (17); and diisobutyl dimethyl butynediol polyoxyethylene glycol ether, represented by chemical formula
  • the content of the surfactant in the polishing composition is preferably in the range of 0.025 to 0.2 mass%, and more preferably in the range of 0.03 to 0.1 mass%.
  • the content of the surfactant is less than 0.025 mass%, the depth of the dishing is not largely reduced, and the occurrence of the dishing thus might not be suppressed.
  • the content of the surfactant is more than 0.2 mass%, polishing of the copper containing metal is suppressed too strongly, and thereby the conductive film 15 to be removed might be left on the insulating film 12 after polishing.
  • the oxidant may be a persulfate, such as ammonium persulfate, potassium persulfate, or sodium persulfate, periodic acid, peracetic acid, perchloric acid, ammonium percarbonate or hydrogen peroxide.
  • the persulfate is preferable, and ammonium persulfate is more preferable.
  • the content of the oxidant in the polishing composition is preferably in the range of 0.5 to 10 mass%, and more preferably in the range of 1 to 5 mass%.
  • the content of the oxidant is less than 0.5 mass%, the ability of the polishing composition to polish the copper containing metal is insufficient, and thereby the conductive film 15 to be removed might be left on the insulating film 12.
  • the content of the oxidant is more than 10 mass%, the ability of the polishing composition to polish the copper containing metal is too high, which might cause an increase in depth of the dishing.
  • Water preferably contains as few impurities as possible. Specifically, pure water, obtained by removing impurity ions with an ion-exchange resin and then contaminants through a filter, ultrapure water, or distilled water is preferable.
  • Water is added with the ingredients (a) to (e), followed by mixing, to prepare a polishing composition.
  • a blade-type agitator, an ultrasonic disperser or the like may be used.
  • the pH of the polishing composition is preferably not less than 7, more preferably from 7 to 12, and most preferably from 8 to 10.
  • the pH of the polishing composition is less than 7, the ability of the polishing composition to polish the copper containing metal might decrease.
  • the pH of the polishing composition is more than 12, the ability of the polishing composition to polish the copper containing metal is too high, which might lead to promotion of the dishing.
  • the pH of the polishing composition may be adjusted by addition of ammonia to the polishing composition.
  • the polishing pad When performing chemical mechanical polishing of the second polishing process using the polishing composition according to the second embodiment, the polishing pad is pressed against the surface of the conductive film 15 while polishing composition is supplied to the surface of the conductive film 15, and rotated.
  • the occurrence of dishing is suppressed due to the action of the alpha-amino acid, benzotriazol derivative, and surfactant of the polishing composition.
  • the capability of the polishing composition to polish the copper containing metal improves due to the action of the alpha-amino acid and oxidant in the polishing composition.
  • the polishing composition according to the third embodiment is also used in the chemical mechanical polishing of the second polishing process, same as the polishing compositions according to the first and second embodiments.
  • the polishing composition according to the third embodiment comprises; an ingredient (a) comprising a silicon oxide; an ingredient (b) comprising at least one selected from the group consisting of carboxylic acid and alpha-amino acid; an ingredient (c) comprising a corrosion inhibitor; an ingredient (d) comprising a surfactant; an ingredient (e) comprising a persulfate; and an ingredient (f) comprising water.
  • the polishing composition further comprises ammonium ion.
  • silicon oxide include colloidal silica, fumed silica, and precipitated silica.
  • colloidal silica or fumed silica is preferred because of their high capability to polish the copper containing metal.
  • the polishing composition may contain two or more types of silicon oxide.
  • the mean particle diameter D N4 of the silicon oxide which is measured by laser diffraction scattering, is preferably 0.01 to 0.5 ⁇ m, and more preferably 0.03 to 0.3 ⁇ m.
  • the mean particle diameter D N4 of the silicon oxide is less than 0.01 ⁇ m, the silicon oxide action to mechanically polish an object to be polished is so weak, whereby there is a risk that the conductive film 15 which is meant to be removed remains on the insulating film 12 after polishing.
  • the mean particle diameter D N4 of the silicon oxide is more than 0.5 ⁇ m, the capability of the polishing composition to polish the copper containing metal is too high, whereby there is a risk of the dishing depth increasing.
  • silicon oxide having a mean particle diameter D N4 of more than 0.5 ⁇ m precipitates more easily, whereby there is the risk that the dispersion stability of the polishing composition deteriorates. Still further, because the capability increases for the polishing composition to polish not only the conductive film 15, but also the barrier film 14 and insulating film 12, there is the risk of erosion being accelerated.
  • the content of silicon oxide in the polishing composition is preferably 0.01 to 10 mass%, and more preferably 0.1 to 3 mass%.
  • the content of the silicon oxide is less than 0.01 mass%, the capability of the polishing composition to polish is insufficient, whereby there is a risk that the conductive film 15 which is meant to be removed remains on the insulating film 12 after polishing.
  • the content of silicon oxide exceeds 10 mass%, there is a risk that the occurrence of dishing and erosion is accelerated due to the capability of the polishing composition for polishing the object to be polished being too high.
  • Ingredient (b) acts to cause a chelate bond with copper, whereby the capability of the polishing composition to polish the copper containing metal increases.
  • the number of carbon atoms that the carboxylic acid and alpha-amino acid contain in one molecule is preferably not more than 10.
  • Specific examples of the carboxylic acid include, for example, citric acid, oxalic acid, succinic acid, maleic acid, and tartaric acid.
  • the carboxylic acid may be either a monocarboxylic or a dicarboxylic acid, and may contain an amino group or a hydroxy group.
  • alpha-amino acid examples include, for example, glycine, alanine, and valine.
  • an alpha-amino acid is preferable from among carboxylic acid and alpha-amino acid, and alanine is more preferable.
  • the acid content in the polishing composition is preferably 0.01 to 2 mass%, and more preferably 0.4 to 1.5 mass%.
  • the acid content is less than 0.01 mass%, the capability of the polishing composition to polish the copper containing metal is insufficient, whereby there is a risk that the conductive film 15 which is meant to be removed remains on the insulating film 12 after polishing.
  • the acid content exceeds 2 mass%, acid concentration is too high, whereby there is a risk that the capability of the polishing composition to polish the copper containing metal decreases, and also a risk that the occurrence of dishing is accelerated.
  • Ingredient (c) acts to inhibit surface corrosion of the conductive film 15 by protecting the copper containing metal from corrosion caused by persulfate.
  • the corrosion inhibitor also acts to suppress the occurrence of dishing by suppressing the conductive film 15 from being excessively polished.
  • Specific examples of the corrosion inhibitor include, for example, a benzotriazole represented by general formula (19).
  • the carbon atom on the fourth, fifth, sixth, or seventh position can be substituted by a nitrogen atom, and the nitrogen atom on the first position may be substituted by a carbon atom.
  • the benzotriazole derivative represented by general formula (20) is preferable of the compounds represented by general formula (19), because its action to protect the surface of the conductive film 15 is strong.
  • the benzotriazole derivatives represented by general formula (20), in which R 14 is an alkyl group having a carboxyl group include the compounds represented by general formula (21).
  • Examples of compounds represented by general formula (21) include, for example, the 1-(1,2-dicarboxyethyl)benzotriazole represented by chemical formula (22).
  • the benzotriazole derivatives represented by general formula (20), in which R 14 is an alkyl group having a hydroxy group and a tertiary amino group include the compounds represented by general formula (23).
  • Examples of compounds represented by general formula (23) include, for example, the 1-[N,N-bis(hydroxyethyl)aminomethyl]benzotriazole represented by chemical formula (24).
  • the benzotriazole derivatives represented by general formula (20), in which R 14 is an alkyl group having a hydroxy group, include the compounds represented by general formula (25) and the compounds represented by general formula (26).
  • Examples of compounds represented by general formulas (25) and (26) include, for example, the 1-(2,3-dihydroxypropyl)benzotriazole represented by chemical formula (27) and 1-(hydroxymethyl)benzotriazole represented by chemical formula (28).
  • the polishing composition may comprise two types or more of a corrosion inhibitor.
  • a corrosion inhibitor 1-[N,N-bis(hydroxyethyl)aminomethyl]benzotriazole represented by chemical formula (24) is preferable, because its action to protect the surface of the conductive film 15 from corrosion caused by acid is strong.
  • the content of the corrosion inhibitor in the polishing composition is preferably 0.1 mass% or less.
  • the content of the corrosion inhibitor in the polishing composition is preferably 0.000001 to 0.001 mass%, and more preferably 0.00003 to 0.0005 mass%.
  • the corrosion inhibitor is 1-[N,N-bis(hydroxyethyl)aminomethyl] benzotriazole
  • the content of the corrosion inhibitor in the polishing composition is preferably 0.00005 to 0.005 mass%, and more preferably 0.0001 to 0.001 mass%.
  • the content of the corrosion inhibitor in the polishing composition is preferably 0.001 to 0.1 mass%, and more preferably 0.003 to 0.05 mass%.
  • the content of the corrosion inhibitor in the polishing composition is preferably 0.0005 to 0.01 mass%, and more preferably 0.002 to 0.008 mass%.
  • Ingredient (d) acts to suppress the occurrence of dishing by reducing the dishing depth.
  • the surfactant include, for example, palm oil fatty acid sarcosine triethanolamine represented by chemical formula (10), palm oil fatty acid methyltaurine sodium represented by chemical formula (11), polyoxyethylene palm oil fatty acid monoethanolamide sodium sulfate represented by chemical formula (12), polyoxyethylene alkylphenyl ether phosphate represented by chemical formula (13), dodecylbenzenesulfonate triethanolamine represented by chemical formula (14), polyoxyethylene alkyl sodium sulfosuccinate represented by chemical formula (15), dioctyl type succinates represented by chemical formula (16), polyoxyethylene lauryl ether sulfate triethanolamine represented by chemical formula (17) and diisobutyldimethylbutyne diol polyoxyethylene glycol ether represented by chemical formula (18).
  • the surfactant content in the polishing composition is preferably 0.025 to 0.2 mass%, and more preferably 0.03 to 0.1 mass%.
  • the surfactant content is less than 0.025 mass%, the dishing depth is hardly reduced, whereby there is a risk that the occurrence of dishing cannot be suppressed.
  • the surfactant content exceeds 0.2 mass%, polishing of the copper containing metal is too strongly suppressed, whereby there is a risk that the conductive film 15 which is meant to be removed remains on the insulating film 12 after polishing.
  • Ingredient (e) acts to accelerate mechanical polishing using silicon oxide through oxidation of the copper containing metal.
  • the persulfate may be ammonium persulfate, potassium persulfate, or sodium persulfate. Among these, ammonium persulfate is preferable, in view of its strong capability of oxidizing copper as well as it serving as a supply source for ammonium ion.
  • the persulfate content in the polishing composition is preferably 0.5 to 10 mass%, and more preferably 1 to 5 mass%.
  • the persulfate content is less than 0.5 mass%, there is a risk that the conductive film 15 which is meant to be removed remains on the insulating film 12 after polishing due to the capability of the polishing composition to polish the copper containing metal being insufficient.
  • the persulfate content exceeds 10 mass%, there is a risk of the dishing depth increasing due to the capability of the polishing composition to polish the copper containing metal being too high.
  • Ingredient (f) acts as a medium for dissolving or dispersing the ingredients other than water that are in the polishing composition.
  • the water preferably contains as little impurities as possible. Specific examples include pure water from which impurity ions were removed using an ion-exchange resin, and was then passed through a filter to remove foreign substances, ultra-pure water, or distilled water.
  • the polishing composition is prepared by adding Ingredients (a) to (e) to water, and mixing. During the mixing, a blade-type agitator or an ultrasonic dispersing apparatus can be used. The order of adding Ingredients (a) to (e) to water is not specifically limited.
  • the pH of the polishing composition is from 7 or more to less than 12, preferably from 8.5 to 11, and more preferably from 9 to 11.
  • the polishing composition pH is less than 7, there is a risk that the capability of the polishing composition to polish the copper containing metal is insufficient.
  • the polishing composition pH exceeds 12, there is a risk of the occurrence of dishing being accelerated due to the capability of the polishing composition to polish the copper containing metal being too high.
  • the polishing composition pH may be adjusted by the addition of a pH modifier to the polishing composition.
  • the pH modifier is preferably ammonia; an ammonium salt such as ammonium carbonate, ammonium sulfate, ammonium bicarbonate, ammonium phosphate, ammonium hydrogenphosphate, ammonium lactate, ammonium citrate, and ammonium glycolate; or the hydroxide or salt of an alkali metal. Among these, ammonium salts are more preferable.
  • the polishing composition may comprise two or more pH modifiers.
  • the pH modifier content in the polishing composition is preferably 0.0001 to 10 mass%.
  • the ammonium ion in the polishing composition acts to increase the capability of the polishing composition to polish the copper containing metal.
  • the ammonium ion preferably is derived from the persulfate or the pH modifier added to the polishing composition.
  • the ammonium ion content is preferably 0.03 to 0.3 mass%, and more preferably 0.07 to 0.2 mass%.
  • the polishing pad When performing chemical mechanical polishing of the second polishing process using the polishing composition according to the third embodiment, the polishing pad is pressed against the surface of the conductive film 15 while supplying polishing composition to the surface of conductive film 15, and rotated.
  • the occurrence of dishing is suppressed due to the action of the at least one selected from the group consisting of carboxylic acid and alpha-amino acid, the corrosion inhibitor, and the surfactant in the polishing composition.
  • the capability of the polishing composition to polish the copper containing metal improves due to the action of the ammonium ion in the polishing composition.
  • the polishing composition according to the fourth embodiment is also used in the chemical mechanical polishing of the second polishing process, same as the polishing compositions according to the first, second and third embodiments.
  • the polishing composition according to the fourth embodiment comprises an ingredient (a) which consists of a first silicon oxide; an ingredient (b) which consists of a second silicon oxide; an ingredient (c) which consists of at least one selected from the group consisting of carboxylic acid and alpha-amino acid; an ingredient (d) which consists of a corrosion inhibitor; an ingredient (e) which consists of a surfactant; an ingredient (f) which consists of an oxidant; and an ingredient (g) which consists of water.
  • the first silicon oxide may be colloidal silica, fumed silica or precipitated silica. Among these, colloidal silica or fumed silica is preferred because of their high capability to polish the copper containing metal.
  • the polishing composition may contain two or more types of the first silicon oxide.
  • the 50% particle diameter D50 of the first silicon oxide is from 60 to 150 nm.
  • the specific size is the 50% particle diameter D50 of the first silicon oxide. That is, for example, when the 50% particle diameter D50 of the first silicon oxide is 60 nm, the 50% of the sum of the weights of all the particles in the first silicon oxide consists of the accumulated weight of particles having a particle diameter not more than 60 nm.
  • the 50% particle diameter D50 of the first silicon oxide is less than 60 nm, the first silicon oxide action for mechanically polishing the object to be polished is weak, whereby there is a risk that the conductive film 15 which is meant to be removed remains on the insulating film 12 after polishing.
  • the 50% particle diameter D50 of the first silicon oxide exceeds 150 nm, the capability of the polishing composition to polish the copper containing metal is too high, whereby there is a risk of the dishing depth and erosion depth increasing. Further, because a first silicon oxide having a 50% particle diameter D50 exceeding 150 nm precipitates more easily, there is a risk of the dispersion stability of the polishing composition deteriorating.
  • the particle distribution width of the first silicon oxide is preferably as narrow as possible.
  • the difference between the 75% particle diameter D75 of the first silicon oxide and the 25% particle diameter D25 of the first silicon oxide is preferably from 10 to 50 nm.
  • the specific size is the 75% particle diameter D75 of the first silicon oxide.
  • the specific size is the 25% particle diameter D25 of the first silicon oxide. It is not easy to prepare a first silicon oxide in which the difference between the 75% particle diameter D75 and the 25% particle diameter D25 is less than 10 nm. When the difference between the 75% particle diameter D75 and the 25% particle diameter D25 exceeds 50 nm, there is the risk that the capability of the polishing composition to polish the copper containing metal will deteriorate and that the dishing depth and erosion depth will increase. In addition, there is also the fear that scratches will develop on the object to be polished after polishing.
  • Ingredient (b), namely the second silicon oxide acts to mechanically polish the surface to be polished, and more specifically, acts to relatively smoothly polish the object to be polished. Accordingly, the second silicon oxide reduces dishing depth and erosion depth, and thus suppresses the occurrence of dishing and erosion, by suppressing the copper containing metal from being excessively polished.
  • the second silicon oxide may be colloidal silica, fumed silica, or precipitated silica. Among these, colloidal silica or fumed silica is preferred because of their high capability to polish the copper containing metal, and more preferred is colloidal silica.
  • the polishing composition may contain two or more types of the second silicon oxide.
  • the 50% particle diameter D50 of the second silicon oxide is from 10 to 50 nm.
  • the 50% particle diameter D50 of the second silicon oxide is less than 10 nm, the second silicon oxide action for mechanically polishing the object to be polished is weak, whereby there is a risk that the conductive film 15 which is meant to be removed remains on the insulating film 12 after polishing.
  • the 50% particle diameter D50 of the second silicon oxide exceeds 50 nm, the action of the second silicon oxide for mechanically polishing the object to be polished is too high, whereby there is a risk of the occurrence of dishing and erosion being accelerated.
  • the particle distribution width of the second silicon oxide is, in the same manner as that of the first silicon oxide, preferably as narrow as possible.
  • the difference between the 75% particle diameter D75 of the second silicon oxide and the 25% particle diameter D25 of the second silicon oxide is preferably from 10 to 50 nm. It is not easy to prepare a second silicon oxide in which the difference between the 75% particle diameter D75 and the 25% particle diameter D25 is less than 10 nm. When the difference between the 75% particle diameter D75 and the 25% particle diameter D25 exceeds 50 nm, there is the risk that the capability of the polishing composition to polish the copper containing metal will deteriorate and that the dishing depth and erosion depth will increase.
  • the value of the 50% particle diameter D50 of the first silicon oxide when it is relatively large, for example when it is 100 nm or more to 150 nm or less, the value of the 50% particle diameter D50 of the second silicon oxide is preferably relatively small, for example 10 nm or more to 30 nm or less.
  • the value of the 50% particle diameter D50 of the second silicon oxide when the value of the 50% particle diameter D50 of the first silicon oxide is relatively small, for example when it is 60 nm or more to 100 nm or less, the value of the 50% particle diameter D50 of the second silicon oxide is preferably relatively large, for example 30 nm or more to 50 nm or less.
  • a relatively small value of the 50% particle diameter D50 of the first silicon oxide and a relatively large value of the 50% particle diameter D50 of the second silicon oxide is preferable.
  • the total of the first silicon oxide content and the second silicon oxide content in the polishing composition is preferably 0.01 to 10 mass%, and more preferably 0.1 to 3 mass%.
  • the total silicon oxide content is less than 0.01 mass%, the capability of the polishing composition to polish is insufficient, whereby there is a risk that the conductive film 15 which is meant to be removed remains on the insulating film 12 after polishing.
  • the total silicon oxide content exceeds 10 mass%, there is the risk that the occurrence of dishing and erosion is accelerated due to the capability of the polishing composition for polishing the object to be polished being too high.
  • the ratio of the difference between the content of the first silicon oxide in the polishing composition and the content of the second silicon oxide in the polishing composition is determined as appropriate. For example, if more effective suppression of the occurrence of dishing and erosion is desired, the ratio of the second silicon oxide can be set to be high, while if more effective improvement in the polishing capability of the polishing composition is desired, the ratio of the first silicon oxide can be set to be high.
  • Ingredient (c) acts to cause a chelate bond with copper, whereby the capability of the polishing composition to polish the copper containing metal increases.
  • the number of carbon atoms that the carboxylic acid and alpha-amino acid contain in one molecule is preferably not more than 10.
  • Specific examples of the carboxylic acid include, for example, citric acid, oxalic acid, succinic acid, maleic acid, and tartaric acid.
  • the carboxylic acid may be either a monocarboxylic or a dicarboxylic acid, and may contain an amino group or a hydroxy group.
  • alpha-amino acid examples include, for example, glycine, alanine, and valine.
  • an alpha-amino acid is preferable from among carboxylic acid and alpha-amino acid, and alanine is more preferable.
  • the acid content in the polishing composition is preferably 0.01 to 2 mass%, and more preferably 0.4 to 1.5 mass%.
  • the acid content is less than 0.01 mass%, the capability of the polishing composition to polish the copper containing metal is insufficient, whereby there is a risk that the conductive film 15 which is meant to be removed remains on the insulating film 12 after polishing.
  • the acid content exceeds 2 mass%, the acid concentration is too high, whereby there is a risk that the capability of the polishing composition to polish the copper containing metal decreases and also a risk that the occurrence of dishing is accelerated.
  • Ingredient (d) acts to inhibit surface corrosion of the conductive film 15 by protecting the copper containing metal from corrosion caused by an oxidant.
  • the corrosion inhibitor also acts to suppress the occurrence of dishing by suppressing the conductive film 15 from being excessively polished.
  • Specific examples of the corrosion inhibitor include, for example, a benzotriazole represented by general formula (19).
  • the carbon atom on the fourth, fifth, sixth, or seventh position can be substituted by a nitrogen atom, and the nitrogen atom on the first position may be substituted by a carbon atom.
  • the benzotriazole derivative represented by general formula (20) is preferable of the compounds represented by general formula (19), because its action to protect the surface of the conductive film 15 is strong.
  • the benzotriazole derivatives represented by general formula (20), in which R 14 is an alkyl group having a carboxyl group include the compounds represented by general formula (21).
  • Examples of compounds represented by general formula (21) include, for example, the 1-(1,2-dicarboxyethyl) benzotriazole represented by chemical formula (22).
  • the benzotriazole derivatives represented by general formula (20), in which R 14 is an alkyl group having a hydroxy group and a tertiary amino group, include the compounds represented by general formula (23).
  • Examples of compounds represented by general formula (23) include, for example, the 1-[N,N-bis(hydroxyethyl)aminomethyl] benzotriazole represented by chemical formula (24).
  • the benzotriazole derivatives represented by general formula (20), in which R 14 is an alkyl group having a hydroxy group, include the compounds represented by general formula (25) and the compounds represented by general formula (26).
  • Examples of compounds represented by general formulas (25) and (26) include, for example, the 1-(2,3-dihydroxypropyl)benzotriazole represented by chemical formula (27) and the 1-(hydroxymethyl)benzotriazole represented by chemical formula (28).
  • the polishing composition may comprise two types or more of the corrosion inhibitor.
  • 1-[N,N-bis(hydroxyethyl)aminomethyl] benzotriazole represented by chemical formula (24) is preferable, because its action to protect the surface of the conductive film 15 from corrosion caused by acid is strong.
  • the content of the corrosion inhibitor in the polishing composition is preferably 0.1 mass% or less.
  • the content of the corrosion inhibitor in the polishing composition is preferably 0.000001 to 0.001 mass%, and more preferably 0.00003 to 0.0005 mass%.
  • the corrosion inhibitor is 1-[N,N-bis(hydroxyethyl)aminomethyl] benzotriazole
  • the content of the corrosion inhibitor in the polishing composition is preferably 0.00005 to 0.005 mass%, and more preferably 0.0001 to 0.001 mass%.
  • the content of the corrosion inhibitor in the polishing composition is preferably 0.001 to 0.1 mass%, and more preferably 0.003 to 0.05 mass%.
  • the content of the corrosion inhibitor in the polishing composition is preferably 0.0005 to 0.01 mass%, and more preferably 0.002 to 0.008 mass%.
  • Ingredient (e) acts to suppress the occurrence of dishing by lowering the dishing depth.
  • the surfactant include, for example, palm oil fatty acid sarcosine triethanolamine represented by chemical formula (10), palm oil fatty acid methyltaurine sodium represented by formula (11), polyoxyethylene palm oil fatty acid monoethanolamide sodium sulfate represented by chemical formula (12), polyoxyethylene alkylphenyl ether phosphate represented by chemical formula (13), dodecylbenzenesulfonate triethanolamine represented by chemical formula (14), polyoxyethylene alkyl sodium sulfosuccinate represented by chemical formula (15), dioctyl type succinates represented by chemical formula (16), polyoxyethylene lauryl ether sulfate triethanolamine represented by chemical formula (17), and diisobutyldimethylbutyne diol polyoxyethylene glycol ether represented by chemical formula (18).
  • the surfactant content in the polishing composition is preferably 0.025 to 0.2 mass%, and more preferably 0.03 to 0.1 mass%.
  • the surfactant content is less than 0.025 mass%, the dishing depth is hardly reduced, whereby there is a risk that the dishing occurrence cannot be suppressed.
  • the surfactant content exceeds 0.2 mass%, polishing of the copper containing metal is too strongly suppressed, whereby there is a risk that the conductive film 15 which is meant to be removed remains on the insulating film 12 after polishing.
  • Ingredient (f) acts to accelerate mechanical polishing using the first and second silicon oxides through oxidation of the copper containing metal.
  • the oxidant may be a persulfate, such as ammonium persulfate, potassium persulfate, or sodium persulfate, periodic acid, peracetic acid, perchloric acid, ammonium percarbonate, or hydrogen peroxide.
  • a persulfate is preferable in view of its strong capability of oxidizing copper, and even more preferable is ammonium persulfate.
  • the oxidant content in the polishing composition is preferably 0.5 to 10 mass%, and more preferably 1 to 5 mass%.
  • the oxidant content is less than 0.5 mass%, there is a risk that the conductive film 15 which is meant to be removed remains on the insulating film 12 after polishing due to the capability of the polishing composition to polish the copper containing metal being insufficient.
  • the oxidant content exceeds 10 mass%, there is a risk of the dishing depth increasing due to the capability of the polishing composition to polish the copper containing metal being too high.
  • Ingredient (g) acts as a medium for dissolving or dispersing the ingredients other than water that are in the polishing composition.
  • the water preferably contains as little impurities as possible. Specific examples include pure water from which impurity ions were removed using an ion-exchange resin, and was then passed through a filter to remove foreign substances, ultra-pure water, or distilled water.
  • the polishing composition is prepared by adding Ingredients (a) to (f) to water, and mixing. During the mixing, a blade-type agitator or an ultrasonic dispersing apparatus can be used. The order of adding Ingredients (a) to (f) to water is not specifically limited.
  • the pH of the polishing composition is 7 or more, preferably 7 to 12, and most preferably 8 to 10.
  • the polishing composition pH is less than 7, there is a risk that the capability of the polishing composition to polish the copper containing metal deteriorates.
  • the polishing composition pH exceeds 12, there is a risk of the occurrence of dishing being accelerated due to the capability of the polishing composition to polish the copper containing metal being too high.
  • the polishing composition pH may be adjusted by the addition of ammonia to the polishing composition.
  • the polishing pad When performing the chemical mechanical polishing of the second polishing process using the polishing composition according to the fourth embodiment, the polishing pad is pressed against the surface of the conductive film 15 while supplying polishing composition to the surface of conductive film 15, and rotated.
  • the occurrence of dishing is suppressed due to the action of the second silicon oxide, the corrosion inhibitor, and the surfactant in the polishing composition.
  • the capability of the polishing composition to polish the copper containing metal improves due to the action of the first silicon oxide and the at least one selected from the group consisting of carboxylic acid and alpha-amino acid in the polishing composition.
  • Each of the polishing compositions according to the first to fourth embodiments may further comprise, as necessary, a thickener, an antifoaming agent, or a preservative.
  • Each of the polishing compositions according to the first to fourth embodiments may be prepared by diluting the stock solution with water.
  • the polishing composition according to the third embodiment may be prepared and stored in a state where the persulfate is separated from the other ingredients, whereby the persulfate may be added to the other ingredients immediately before use. In such a case, the decomposition of persulfate in the polishing composition is suppressed when the polishing composition is stored for a long period of time.
  • a part of the portion of the conductive film 15 that is located outside of the trench 13 may be removed by chemical mechanical polishing so that an upper surface of the barrier film 14 is exposed.
  • the remaining portion of the conductive film 15 that is located outside of the trench 13 and the portion of the barrier film 14 that is located outside of the trench 13 may be removed by chemical mechanical polishing so that an upper surface of the insulating film 12 is exposed.
  • the polishing compositions according to the first to fourth embodiments can be used in the chemical mechanical polishing of the first polishing process.
  • the thickness of a copper blanket wafer before and after polishing was measured when a copper blanket wafer was polished in accordance with the first polishing conditions using the polishing compositions according to Examples 1 to 31 and Comparative Examples 1 to 11. Wafer thickness was measured using a sheet resistor (VR-120, manufactured by Kokusai Denki System Service K.K.). The reduction in wafer thickness as a result of the polishing was determined from wafer thickness measured before and after polishing. A polishing rate obtained by dividing the reduction in wafer thickness obtained in this way by the polishing time is shown in the "Polishing Rate" column of Table 1.
  • Polishing machine Polishing machine for single-sided CMP (Mirra; manufactured by Applied Materials, Inc.)
  • Object to be polished Copper blanket wafer comprising a copper film formed on an 8-inch silicon wafer by an electrolytic plating method
  • Polishing pad laminated polishing pad made of polyurethane (IC-1000/Suba 400, manufactured by Rodel Inc.) Polishing pressure: 2 psi (about 13.8 kPa)
  • Turntable rotation speed 60 rpm Feed speed of polishing composition: 200 ml/min
  • Carrier rotation speed 60 rpm Polishing time: 1 minute
  • Copper patterned wafers were polished in accordance with the second polishing conditions using the polishing slurry "PLANERLITE-7102", manufactured by Fujimi Incorporated. Polishing was stopped when the copper film thickness of the polished copper patterned wafer had reached 70% of the copper film thickness of the copper patterned wafer prior to polishing. This process corresponds to the chemical mechanical polishing process of the first polishing process.
  • copper patterned wafers that had been subjected to the chemical mechanical polishing process of the first polishing process were polished in accordance with the first polishing conditions using the respective polishing compositions according to Examples 1 to 31 and Comparative Examples 1 to 11.
  • polishing was completed after further polishing only for the extra time it took to polish the copper film to a thickness of 200 nm. This process corresponds to the chemical mechanical polishing process of the second polishing process.
  • the dishing depth was then measured in the region in which wiring 17 had a width of 100 ⁇ m.
  • the dishing depth was measured using the profiler HRP340 manufactured by KLA-Tencor Corporation, which is a contact-type surface measuring device. These measured results are shown in the "Dishing Depth" column of Table 1.
  • the amount of copper containing metal that remained on the insulting film 12 of the region wherein wiring 17 was not formed was measured for the copper patterned wafers that had been subjected to the chemical mechanical polishing process of the second polishing process.
  • the remaining amount of copper containing metal was measured using an "OPTIPHOTO 300" differential interference microscope manufactured by Nikon Corporation. Based on the remaining amount of copper containing metal measured in this manner, each polishing composition was evaluated using the four grades of excellent (O), good (O), acceptable ( ⁇ ), and poor (x).
  • Polishing machine Polishing machine for single-sided CMP (Mirra; manufactured by Applied Materials, Inc.); Object to be polished: Patterned wafer (854 mask pattern) comprising a copper film having a thickness of 1000 nm and initial concave portions 16 having an 800 nm depth (manufactured by SEMATECH, Inc.); Polishing pad: laminated polishing pad made of polyurethane (IC-1400, manufactured by Rodel Inc.) Polishing pressure: 2.0 psi (about 13.8 kPa) Turntable rotation speed: 100 rpm Feed speed of polishing composition: 200 ml/min Carrier rotation speed: 100 rpm
  • Copper blanket wafers were polished in accordance with the first polishing conditions using both polishing compositions directly after they had been prepared, and polishing compositions that had been stored for some time after preparation in an airtight vessel.
  • the respective polishing rate was calculated from the wafer thickness before and after polishing, whereby based on the comparison between the two calculated polishing rates, the pot life for each polishing composition was evaluated using the four grades of excellent (O), good (O), acceptable ( ⁇ ), and poor (x).
  • the mean particle diameter D N4 of the silicon dioxide was measured using an N4 Plus Submicron Particle Sizer manufactured by Beckman Coulter, Inc.
  • the total content of iron, nickel copper, chromium, zinc and calcium in a 20 mass% aqueous solution of colloidal silica was not more than 20 ppb.
  • polishing compositions according to Examples 1 to 4 in which the content of a compound selected from a first group was from 0.05 to 0.1 mass%, and the polishing compositions according to Examples 5 to 7, in which the content of a compound selected from a second group was from 0.05 to 0.1 mass%, had a high capability to polish a copper containing metal, yet could dramatically reduce dishing depth.
  • the thickness of a copper blanket wafer before and after polishing was measured when a copper blanket wafer was polished in accordance with the first polishing conditions using the polishing compositions according to Examples 101 to 133 and Comparative Examples 101 to 116. Wafer thickness was measured using a sheet resistor (VR-120, manufactured by Kokusai Denki System Service K.K.). The reduction in wafer thickness as a result of the polishing was determined from the wafer thickness measured before and after polishing. A polishing rate obtained by dividing the reduction in wafer thickness obtained in this way by the polishing time is shown in the "Polishing Rate" column of Table 2.
  • Copper patterned wafers were polished in accordance with the second polishing conditions using the polishing slurry "PLANERLITE-7102", manufactured by Fujimi Incorporated. Polishing was stopped when the copper film thickness of the polished copper patterned wafer had reached 70% of the copper film thickness of the copper patterned wafer prior to polishing. This process corresponds to the chemical mechanical polishing process of the first polishing process.
  • copper patterned wafers that had been subjected to the chemical mechanical polishing process of the first polishing process were polished in accordance with the first polishing conditions using the respective polishing compositions according to Examples 101 to 133 and Comparative Examples 101 to 116.
  • polishing was completed after further polishing only for the extra time it took to polish the copper film to a thickness of 200 nm. This process corresponds to the chemical mechanical polishing process of the second polishing process.
  • the dishing depth was then measured in the region in which wiring 17 had a width of 100 ⁇ m.
  • the dishing depth was measured using the profiler HRP340 manufactured by KLA-Tencor Corporation, which is a contact-type surface measuring device. These measured results are shown in the "Dishing Depth" column of Table 2.
  • the amount of copper containing metal that remained on the insulting film 12 of the region wherein wiring 17 was not formed was measured for the copper patterned wafers that had been subjected to the chemical mechanical polishing process of the second polishing process.
  • the remaining amount of copper containing metal was measured using a "OPTIPHOTO 300" differential interference microscope manufactured by Nikon Corporation. Based on the remaining amount of copper containing metal measured in this manner, each polishing composition was evaluated using the four grades of excellent ( ⁇ ), good (O), acceptable ( ⁇ ), and poor (x).
  • Copper blanket wafers were polished in accordance with the first polishing conditions using both polishing compositions directly after they had been prepared, and polishing compositions that had been stored for some time after preparation in an airtight vessel.
  • the respective polishing rate was calculated from the wafer thickness before and after polishing, whereby based on the comparison between the two calculated polishing rates, the pot life for each polishing composition was evaluated using the four grades of excellent ( ⁇ ), good (O), acceptable ( ⁇ ), and poor (x).
  • the mean particle diameter D N4 of the silicon dioxide was measured using an N4 Plus Submicron Particle Sizer manufactured by Beckman Coulter, Inc.
  • the total content of iron, nickel copper, chromium, zinc and calcium in a 20 mass% aqueous solution of colloidal silica was not more than 20 ppb.
  • the polishing compositions according to Examples 1 to 5 in which the content of alpha-amino acid was from 0.5 to 1.5 mass%, had a high capability to polish a copper containing metal, yet could dramatically reduce dishing depth.
  • Each ingredient shown in Table 3 was mixed with water to prepare the polishing compositions of Examples 201 to 235 and Comparative Examples 201 to 214.
  • a pH modifier was added to each polishing composition in just the amount to adjust the pH for the polishing compositions to the values shown in Table 3.
  • a mixture of sodium hydroxide and 0.03 mass% ammonia was added as the pH modifier to the polishing composition of Example 214.
  • a mixture of sodium hydroxide and 0.5 mass% ammonium carbonate was added as the pH modifier to the polishing composition of Example 215.
  • the thickness of a copper blanket wafer before and after polishing was measured when a copper blanket wafer was polished in accordance with the first polishing conditions using the polishing compositions according to Examples 201 to 235 and Comparative Examples 201 to 214. Wafer thickness was measured using a sheet resistor (VR-120, manufactured by Kokusai Denki System Service K.K.). The reduction in wafer thickness as a result of the polishing was determined from the wafer thickness measured before and after polishing. A polishing rate obtained by dividing the reduction in wafer thickness obtained in this way by the polishing time is shown in the "Polishing Rate" column of Table 3.
  • Copper patterned wafers were polished in accordance with the second polishing conditions using the polishing slurry "PLANERLITE-7102", manufactured by Fujimi Incorporated. Polishing was stopped when the copper film thickness of the polished copper patterned wafer had reached 70% of the copper film thickness of the copper patterned wafer prior to polishing. This process corresponds to the chemical mechanical polishing process of the first polishing process.
  • copper patterned wafers that had been subjected to the chemical mechanical polishing process of the first polishing process were polished in accordance with the first polishing conditions using the respective polishing compositions according to Examples 201 to 235 and Comparative Examples 201 to 214.
  • polishing was completed after further polishing only for the extra time it took to polish the copper film to a thickness of 200 nm. This process corresponds to the chemical mechanical polishing process of the second polishing process.
  • the dishing depth was then measured in the region in which wiring 17 had a width of 100 ⁇ m.
  • the dishing depth was measured using the profiler HRP340 manufactured by KLA-Tencor Corporation, which is a contact-type surface measuring device. These measured results are shown in the "Dishing Depth” column of Table 3.
  • the "-" (hyphens) in this column indicates that measurement of the dishing depth was impossible because the wafer had not been polished.
  • the amount of copper containing metal that remained on the insulting film 12 of the region wherein wiring 17 was not formed was measured for the copper patterned wafers that had been subjected to the chemical mechanical polishing process of the second polishing process.
  • the remaining amount of copper containing metal was measured using an "OPTIPHOTO 300" differential interference microscope manufactured by Nikon Corporation. Based on the remaining amount of copper containing metal measured in this manner, each polishing composition was evaluated using the four grades of excellent ( ⁇ ), good (O), acceptable ( ⁇ ), and poor (x).
  • Copper blanket wafers were polished in accordance with the first polishing conditions using both polishing compositions directly after they had been prepared, and polishing compositions that had been stored for some time after preparation in an airtight vessel.
  • the respective polishing rate was calculated from the wafer thickness before and after polishing, whereby based on the comparison between the two calculated polishing rates, the pot life for each polishing composition was evaluated using the four grades of excellent ( ⁇ ), good (O), acceptable ( ⁇ ), and poor (x).
  • the mean particle diameter D N4 of the silicon dioxide was measured using an N4 Plus Submicron Particle Sizer manufactured by Beckman Coulter, Inc.
  • the total content of iron, nickel copper, chromium, zinc and calcium in a 20 mass% aqueous solution of colloidal silica was not more than 20 ppb.
  • Each ingredient shown in Table 4 was mixed with water to prepare the polishing compositions of Examples 301 to 313 and Comparative Examples 301 to 315.
  • the pH for each polishing composition was adjusted to pH 9.5 by adding sodium hydroxide.
  • the thickness of a copper blanket wafer before and after polishing was measured when a copper blanket wafer was polished in accordance with the first polishing conditions using the polishing compositions according to Examples 301 to 313 and Comparative Examples 301 to 315. Wafer thickness was measured using a sheet resistor (VR-120, manufactured by Kokusai Denki System Service K.K.). The reduction in wafer thickness as a result of the polishing was determined from the wafer thickness measured before and after polishing. A polishing rate obtained by dividing the reduction in wafer thickness obtained in this way by the polishing time is shown in the "Polishing Rate" column of Table 4.
  • Copper patterned wafers were polished in accordance with the second polishing conditions using the polishing slurry "PLANERLITE-7102", manufactured by Fujimi Incorporated. Polishing was stopped when the copper film thickness of the polished copper patterned wafer had reached 70% of the copper film thickness of the copper patterned wafer prior to polishing. This process corresponds to the chemical mechanical polishing process of the first polishing process.
  • copper patterned wafers that had been subjected to the chemical mechanical polishing process of the first polishing process were polished in accordance with the first polishing conditions using the respective polishing compositions according to Examples 301 to 313 and Comparative Examples 301 to 315.
  • polishing was completed after further polishing only for the extra time it took to polish the copper film to a thickness of 200 nm. This process corresponds to the chemical mechanical polishing process of the second polishing process.
  • the dishing depth d was then measured in the region in which wiring 17 had a width of 100 ⁇ m. The dishing depth was measured using the profiler HRP340 manufactured by KLA-Tencor Corporation, which is a contact-type surface measuring device. These measured results are shown in the "Dishing Depth" column of Table 4.
  • the amount of copper containing metal that remained on the insulting film 12 of the region wherein wiring 17 was not formed was measured for the copper patterned wafers that had been subjected to the chemical mechanical polishing process of the second polishing process.
  • the remaining amount of copper containing metal was measured using an "OPTIPHOTO 300" differential interference microscope manufactured by Nikon Corporation. Based on the remaining amount of copper containing metal measured in this manner, each polishing composition was evaluated using the four grades of excellent ( ⁇ ), good (O), acceptable ( ⁇ ), and poor (x).
  • Copper blanket wafers were polished in accordance with the first polishing conditions using both polishing compositions directly after they had been prepared, and polishing compositions that had been stored for some time after preparation in an airtight vessel.
  • the respective polishing rate was calculated from the wafer thickness before and after polishing, whereby based on the comparison between the two calculated polishing rates, the pot life for each polishing composition was evaluated using the four grades of excellent ( ⁇ ), good (O), acceptable ( ⁇ ), and poor (x).
  • the 25% particle diameter D25, 50% particle diameter D50, and 75% particle diameter D75 of the silicon dioxide were based on particle size distribution as measured using an N4 Plus Submicron Particle Sizer manufactured by Beckman Coulter, Inc.
  • the total content of iron, nickel copper, chromium, zinc and calcium in a 20 mass% aqueous solution of colloidal silica was not more than 20 ppb.
  • Ala denotes alanine
  • G denotes 1-(2,3-dihydroxypropyl)benzotriazole.
  • D denotes polyoxyethylene lauryl ether sulfate triethanolamine.
  • APS denotes ammonium persulfate.
  • the polishing compositions of Comparative Examples 308 to 312 had a polishing rate of 500 nm/minute or less, wherein the capability to polish a copper containing metal was low. Further, in the Comparative Examples 309 to 315, the dishing depth was a large 35 nm or more, whereby the occurrence of dishing could not be suppressed.

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KR101216514B1 (ko) 2012-12-31
KR101110707B1 (ko) 2012-04-16
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CN1616575A (zh) 2005-05-18
KR20110084482A (ko) 2011-07-25
SG110211A1 (en) 2005-04-28
EP1520892B1 (fr) 2011-12-21
KR20110084481A (ko) 2011-07-25
US20050108949A1 (en) 2005-05-26
CN100393833C (zh) 2008-06-11
EP2418259B1 (fr) 2013-02-13
US7485162B2 (en) 2009-02-03
KR20050031992A (ko) 2005-04-06
EP2418260B1 (fr) 2013-02-13
EP1520892A2 (fr) 2005-04-06
EP2418259A1 (fr) 2012-02-15
EP1520892A3 (fr) 2006-06-21
TWI347969B (en) 2011-09-01
ATE538188T1 (de) 2012-01-15

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