EP2393131A1 - Lichtemittierendes Halbleiterbauelement und Herstellungsverfahren - Google Patents

Lichtemittierendes Halbleiterbauelement und Herstellungsverfahren Download PDF

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Publication number
EP2393131A1
EP2393131A1 EP10186829A EP10186829A EP2393131A1 EP 2393131 A1 EP2393131 A1 EP 2393131A1 EP 10186829 A EP10186829 A EP 10186829A EP 10186829 A EP10186829 A EP 10186829A EP 2393131 A1 EP2393131 A1 EP 2393131A1
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Prior art keywords
layer
fluorescent material
light emitting
material layer
major surface
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EP10186829A
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English (en)
French (fr)
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EP2393131B1 (de
Inventor
Yoshiaki Sugizaki
Hideki Shibata
Akihiro Kojima
Masayuki Ishikawa
Hideo Tamura
Tetsuro Komatsu
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Toshiba Corp
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Toshiba Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
EP10186829A 2010-06-03 2010-10-07 Lichtemittierendes Halbleiterbauelement und Herstellungsverfahren Active EP2393131B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010127967A JP5390472B2 (ja) 2010-06-03 2010-06-03 半導体発光装置及びその製造方法

Publications (2)

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EP2393131A1 true EP2393131A1 (de) 2011-12-07
EP2393131B1 EP2393131B1 (de) 2012-11-21

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US (2) US8884327B2 (de)
EP (1) EP2393131B1 (de)
JP (1) JP5390472B2 (de)
HK (1) HK1165141A1 (de)
TW (1) TWI407604B (de)

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WO2013084144A1 (en) * 2011-12-08 2013-06-13 Koninklijke Philips Electronics N.V. Semiconductor light emitting device with thick metal layers
WO2013118072A3 (en) * 2012-02-10 2013-11-07 Koninklijke Philips N.V. Wavelength converted light emitting device
WO2013175338A1 (en) * 2012-05-23 2013-11-28 Koninklijke Philips N.V. Phosphor coating process for discrete light emitting devices
CN103531514A (zh) * 2012-06-29 2014-01-22 日东电工株式会社 覆有密封层的半导体元件、其制造方法及半导体装置
CN104769356A (zh) * 2012-10-30 2015-07-08 首尔半导体株式会社 用于表面照明的透镜和发光模块
CN104956500A (zh) * 2013-02-05 2015-09-30 科锐 无次基台的发光二极管(led)部件及其制作方法
CN105190916A (zh) * 2013-02-05 2015-12-23 克利公司 具有波长转换层的发光装置
EP2680331A3 (de) * 2012-06-29 2016-01-20 Nitto Denko Corporation Mit einer Einkapselungsschicht überzogenes Halbleiterelement, Herstellungsverfahren dafür und Halbleitervorrichtung
EP2750211A3 (de) * 2012-12-28 2016-01-20 Nitto Denko Corporation Mit einer Einkapselungsschicht überzogenes optisches Halbleiterelement, Herstellungsverfahren dafür und Halbleitervorrichtung
WO2017016953A1 (de) * 2015-07-28 2017-02-02 Osram Opto Semiconductors Gmbh Verfahren zur herstellung eines bauelements und ein bauelement
US9618181B2 (en) 2013-04-04 2017-04-11 Seoul Semiconductor Co., Ltd. Lens and light emitting module for surface illumination
WO2018184843A1 (de) * 2017-04-04 2018-10-11 Osram Opto Semiconductors Gmbh Verfahren zur herstellung einer vielzahl strahlungsemittierender halbleiterbauelemente und strahlungsemittierendes halbleiterbauelement
CN115274945A (zh) * 2022-09-30 2022-11-01 江西兆驰半导体有限公司 一种Micro-LED芯片封装方法

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KR20120067153A (ko) 2010-12-15 2012-06-25 삼성엘이디 주식회사 발광소자, 발광소자 패키지, 발광소자의 제조방법, 및 발광소자의 패키징 방법
JP5537446B2 (ja) 2011-01-14 2014-07-02 株式会社東芝 発光装置、発光モジュール、発光装置の製造方法
JP5603793B2 (ja) 2011-02-09 2014-10-08 株式会社東芝 半導体発光装置
CN102683538B (zh) * 2011-03-06 2016-06-08 维亚甘有限公司 发光二极管封装和制造方法
JP5603813B2 (ja) 2011-03-15 2014-10-08 株式会社東芝 半導体発光装置及び発光装置
JP5535114B2 (ja) 2011-03-25 2014-07-02 株式会社東芝 発光装置、発光モジュール、発光装置の製造方法
JP5642623B2 (ja) 2011-05-17 2014-12-17 株式会社東芝 半導体発光装置
JP5843859B2 (ja) 2011-07-01 2016-01-13 シチズンホールディングス株式会社 半導体発光素子の製造方法
JP5662277B2 (ja) 2011-08-08 2015-01-28 株式会社東芝 半導体発光装置及び発光モジュール
KR101934138B1 (ko) * 2011-08-30 2018-12-31 루미리즈 홀딩 비.브이. 기판을 반도체 발광 소자에 본딩하는 방법
JP2013065726A (ja) 2011-09-16 2013-04-11 Toshiba Corp 半導体発光装置及びその製造方法
JPWO2013121708A1 (ja) * 2012-02-15 2015-05-11 パナソニックＩｐマネジメント株式会社 発光装置およびその製造方法
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CN111554781B (zh) * 2012-03-19 2024-04-12 亮锐控股有限公司 磷光体施加前后发光器件的单个化
KR101234933B1 (ko) * 2012-03-28 2013-02-19 삼성전기주식회사 Ｌεｄ 모듈용 기판의 제조 방법 및 이에 따라 제조된 ｌεｄ 모듈용 기판
JP5845134B2 (ja) * 2012-04-27 2016-01-20 株式会社東芝 波長変換体および半導体発光装置
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JP5837456B2 (ja) * 2012-05-28 2015-12-24 株式会社東芝 半導体発光装置及び発光モジュール
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JP6055259B2 (ja) * 2012-10-03 2016-12-27 日東電工株式会社 封止シート被覆半導体素子、その製造方法、半導体装置およびその製造方法
JP5995695B2 (ja) * 2012-12-03 2016-09-21 シチズンホールディングス株式会社 Ｌｅｄ装置の製造方法
JP6307907B2 (ja) * 2013-02-12 2018-04-11 日亜化学工業株式会社 発光素子の製造方法
KR101504331B1 (ko) * 2013-03-04 2015-03-19 삼성전자주식회사 발광소자 패키지
KR102077645B1 (ko) * 2013-05-20 2020-02-14 루미리즈 홀딩 비.브이. 돔을 가진 칩 규모 발광 디바이스 패키지
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JP2016001750A (ja) * 2015-08-19 2016-01-07 株式会社東芝 半導体発光装置
KR102467420B1 (ko) * 2015-08-31 2022-11-16 삼성디스플레이 주식회사 디스플레이 장치 및 이의 제조 방법
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JP7076294B2 (ja) * 2018-06-18 2022-05-27 日機装株式会社 発光装置の製造方法
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JP6784319B2 (ja) * 2018-10-31 2020-11-11 日亜化学工業株式会社 発光装置、発光モジュール、発光装置及び発光モジュールの製造方法
JP6806218B2 (ja) * 2018-10-31 2021-01-06 日亜化学工業株式会社 発光装置、発光モジュール、発光装置及び発光モジュールの製造方法
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CN104956500A (zh) * 2013-02-05 2015-09-30 科锐 无次基台的发光二极管(led)部件及其制作方法
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US8884327B2 (en) 2014-11-11
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US9620669B2 (en) 2017-04-11
JP5390472B2 (ja) 2014-01-15

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