EP2323180A1 - Nitride semiconductor optical device, epitaxial wafer for nitride semiconductor optical device, and method for manufacturing semiconductor light-emitting device - Google Patents

Nitride semiconductor optical device, epitaxial wafer for nitride semiconductor optical device, and method for manufacturing semiconductor light-emitting device Download PDF

Info

Publication number
EP2323180A1
EP2323180A1 EP09812924A EP09812924A EP2323180A1 EP 2323180 A1 EP2323180 A1 EP 2323180A1 EP 09812924 A EP09812924 A EP 09812924A EP 09812924 A EP09812924 A EP 09812924A EP 2323180 A1 EP2323180 A1 EP 2323180A1
Authority
EP
European Patent Office
Prior art keywords
based semiconductor
nitride based
gallium nitride
layer
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09812924A
Other languages
German (de)
English (en)
French (fr)
Inventor
Masaki Ueno
Yohei Enya
Takashi Kyono
Katsushi Akita
Yusuke Yoshizumi
Takamichi Sumitomo
Takao Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of EP2323180A1 publication Critical patent/EP2323180A1/en
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/320275—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth semi-polar orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers

Definitions

  • the present invention relates to a nitride based semiconductor optical device, an epitaxial wafer for a nitride based semiconductor optical device, and the method of fabricating a semiconductor light-emitting device.
  • Patent Document 1 discloses a semiconductor optical device.
  • a piezoelectric field in a strained layer does not occur at all in a direction tilted at an angle of about 40 degrees, 90 degrees, and 140 degrees defined with reference to the [0001] direction. Accordingly, a plane orientation is selected within the angle range of 30 to 50 degrees, 80 to 100 degrees, or 130 to 150 degrees.
  • Epitaxial growth occurs onto the surface of a substrate on which little or no piezoelectric field is generated in a strained quantum-well structure.
  • Patent Document 2 discloses a semiconductor light-emitting device. This semiconductor light-emitting device is formed on a nonpolar plane.
  • the nonpolar plane encompasses a ⁇ 11-20 ⁇ plane, a plane tilted from the ⁇ 11-20 ⁇ plane at an angle in the range of -5 to +5 degrees, a ⁇ 1-100 ⁇ plane, or a plane tilted from the ⁇ 1-100 ⁇ plane at an angle in the range of -5 to +5 degrees.
  • Non-Patent Document 1 discloses a theoretical study of dependence of the piezoelectric effect on crystal orientation in an InGaN/GaN heterostructure of a wurtzite structure.
  • a strained layer grown in a crystal orientation at an off-angle of 39 degrees or 90 degrees with reference to (0001) does not induce the longitudinal component of the piezoelectric field.
  • Non-Patent Document 2 discloses the effect of crystal orientation in relation to electrical characteristics of an InGaN/GaN quantum-well of a wurtzite structure.
  • the internal electric field of the InGaN/GaN quantum-well structure changes its sign around at an off-angle of about 55 degrees.
  • a significantly large piezoelectric field is generated in an InGaN well layer grown on a (0001) plane of a gallium nitride based semiconductor.
  • the piezoelectric field spatially separates the wave function of electrons from that of holes in an active layer, thereby lowering light-emitting efficiency of a light-emitting device.
  • carriers injected into the active layer screen the piezoelectric field therein as the applied current is increased. Such screening causes a blue shift of the emission wavelength with the increase in the applied current.
  • the active layer is formed on a ⁇ 11-20 ⁇ plane or a ⁇ 1-100 ⁇ plane, which defines an angle of 90 degrees with the (0001) plane.
  • Patent Document 1 in order to avoid a large blue shift, an off-angle of 40 degrees or 140 degrees, at which the internal electrical field of the active layer is zero, is used. In Non-Patent Document 1, the off-angle at which the internal electrical field is zero is estimated through theoretical calculation.
  • a ingot thick grown in the (0001) plane direction is cut out to form a crystal piece such that the primary surface has the plane orientation mentioned above. Since the ingot is cut out in its longitudinal direction, the width of the cut-out crystal piece is about 10 millimeters at most.
  • Patent Documents 1 and 2 plane orientation that makes the piezoelectric field zero or near zero is utilized. Inventors' investigations have revealed that, unlike the inventions of Patent Documents 1 and 2, utilizing a piezoelectric field with a non-zero magnitude can enhance performances of semiconductor light-emitting devices.
  • a nitride based semiconductor optical device includes (a) a first gallium nitride based semiconductor region; (b) a light-emitting layer including a well layer and a barrier layer, the well layer being composed of a strained hexagonal gallium nitride based semiconductor, and the barrier layer being composed of gallium nitride based semiconductor; and (c) a second gallium nitride based semiconductor region.
  • the light-emitting layer is provided between the first gallium nitride based semiconductor region and the second gallium nitride based semiconductor region.
  • the first gallium nitride based semiconductor region includes one or more n-type gallium nitride semiconductor layers.
  • the second gallium nitride based semiconductor region includes a gallium nitride based semiconductor layer and one or more p-type gallium nitride semiconductor layers, and the gallium nitride based semiconductor layer has a band gap larger than that of the barrier layer.
  • Each of the well layer and the barrier layer extends along a reference plane, and the reference plane tilts at a tilt angle in the range of 59 degrees to less than 80 degrees and greater than 150 degrees to less than 180 degrees from a plane orthogonal to a reference axis extending in the direction of a c-axis.
  • a piezoelectric field in the light-emitting layer includes a component of a direction opposite to a direction from the second gallium nitride based semiconductor region toward the first gallium nitride based semiconductor region.
  • the gallium nitride based semiconductor layer of the second gallium nitride based semiconductor region is adjacent to the light-emitting layer; and the gallium nitride based semiconductor layer of the second gallium nitride based semiconductor region includes one of an electron blocking layer and a cladding layer.
  • the piezoelectric field in the light-emitting layer includes a component of the direction that is opposite to the direction from the second gallium nitride based semiconductor region toward the first gallium nitride based semiconductor region, whereas the piezoelectric field in the gallium nitride semiconductor layer includes a component of the direction that is the same as the direction from the second gallium nitride based semiconductor region toward the first gallium nitride based semiconductor region.
  • the valence band not the conduction band, has a dip at the interface between the gallium nitride semiconductor layer and the light-emitting layer. Accordingly, the conduction band has no dip thereat, so that overflow of electrons can be reduced.
  • the well layer may be composed of InGaN
  • the barrier layer may be composed of GaN or InGaN.
  • the lattice constants in the directions of the a-axis and the c-axis in InN are larger than those in the directions of the a-axis and the c-axis in GaN, respectively. Consequently, the InGaN well layer is strained due to stress from the barrier layer.
  • the tilt angle may be in the range of 62 degrees to less than 80 degrees. This nitride based semiconductor optical device exhibits reduced blue shift. Alternatively, in the nitride based semiconductor optical device according to the present invention, the tilt angle may be in the range of greater than 150 degrees to 170 degrees. This nitride based semiconductor optical device also exhibits reduced blue shift.
  • the nitride based semiconductor optical device may include a substrate composed of a hexagonal semiconductor In S Al T Ga 1-S-T N (0 ⁇ S ⁇ 1, 0 ⁇ T ⁇ 1, 0 ⁇ S+T ⁇ 1).
  • the primary surface of the substrate extends along a plane tilting at a tilt angle in the range of greater than 59 degrees to less than 80 degrees or greater than 150 degrees to less than 180 degrees with reference to a plane orthogonal to the c-axis of the hexagonal semiconductor.
  • the first gallium nitride based semiconductor region, the light-emitting layer, and the second gallium nitride based semiconductor region are arranged on the primary surface of the substrate in the direction of a predetermined axis.
  • the substrate includes a plurality of first regions and a plurality of second regions.
  • the first regions has the density of threading dislocations, which is larger than a first threading dislocation density, extending in the c-axis direction
  • the second regions has the density of threading dislocations, which is smaller than the first threading dislocation density, extending in the c-axis direction.
  • the first and second regions are alternately arranged and are exposed at the primary surface of the substrate.
  • the first gallium nitride based semiconductor region, the light-emitting layer, and the second gallium nitride based semiconductor region constitute a semiconductor laminate, which is provided on the primary surface of the substrate, and the substrate has electrical conductivity.
  • the hexagonal nitride based semiconductor optical device may include a first electrode provided on the semiconductor laminate and a second electrode provided on the back side of the substrate. According to the nitride based semiconductor optical device, both of the anode and the cathode not are provided on the same upper face of the epitaxial laminate.
  • the reference plane may tilt toward the direction of the a-axis.
  • the tilt toward the direction of the a-axis allows m-plane cleavage in the nitride based semiconductor optical device.
  • the reference plane may tilt toward the direction of the m-axis.
  • the tilt toward the direction of the m-axis allows m-plane cleavage in the nitride based semiconductor optical device.
  • the gallium nitride based semiconductor layer of the second gallium nitride based semiconductor region may be composed of p-type Al X Ga Y In 1-X-Y N (0 ⁇ X ⁇ 1, 0 ⁇ Y ⁇ 1, 0 ⁇ X+Y ⁇ 1) that contains at least aluminum.
  • This nitride based semiconductor optical device can efficiently confine carriers into the light-emitting layer.
  • the epitaxial wafer comprises: (a) a first gallium nitride based semiconductor region; (b) a light-emitting layer including a strained well layer and a barrier layer, the well layer being composed of a hexagonal gallium nitride based semiconductor, and the barrier layer being composed of a gallium nitride based semiconductor; (c) a second gallium nitride based semiconductor region; and (d) a wafer of a hexagonal semiconductor of In S Al T Ga 1-S-T N (0 ⁇ S ⁇ 1, 0 ⁇ T ⁇ 1, 0 ⁇ S+T ⁇ 1).
  • the light-emitting layer is provided between the first gallium nitride based semiconductor region and the second gallium nitride based semiconductor region on the wafer.
  • the first gallium nitride based semiconductor region includes one or more n-type gallium nitride semiconductor layers.
  • the second gallium nitride based semiconductor region includes a gallium nitride based semiconductor layer and one or more p-type gallium nitride based semiconductor layers, and the gallium nitride based semiconductor layer has a band gap larger than that of the barrier layer.
  • the piezoelectric field in the light-emitting layer includes a component in the direction that is opposite to the direction from the second gallium nitride based semiconductor region toward the first gallium nitride based semiconductor region.
  • the piezoelectric field in the gallium nitride based semiconductor layer includes a component in the direction that is the same as the direction from the second gallium nitride based semiconductor region toward the first gallium nitride based semiconductor region.
  • the primary surface of the wafer may extend along a plane tilting at a tilt angle in the range of 59 degrees to less than 80 degrees or greater than 150 degrees to 170 degrees with reference to a plane orthogonal to the c-axis of the hexagonal semiconductor.
  • the well layer and the barrier layer are provided so as to extend along respective reference planes each tilting at a tilt angle in the above-mentioned range by adjusting the tilt angle of the primary surface of the wafer within the above-mentioned range.
  • the maximum distance between two points on the edge of the wafer may be 45 millimeters or more.
  • a wafer with a large diameter can be provided, unlike those of a primary surface of the a-plane or the m-plane.
  • the wafer may be composed of electrically conductive GaN.
  • the first gallium nitride based semiconductor region, the light-emitting layer, and the second gallium nitride based semiconductor region are arranged on the primary surface of the wafer in the direction of a predetermined axis.
  • the direction of the reference axis is different from the direction of the predetermined axis.
  • the direction of the above arrangement is the same as the direction of a predetermined axis, and the epitaxial growth occurs in the direction of the reference axis.
  • the tilt angle may be in the range of 62 degrees to less than 80 degrees.
  • This epitaxial wafer can procide a nitride based semiconductor optical device with a small blue shift.
  • the tilt angle may be in the range of greater than 150 degrees to less than 170 degrees.
  • This epitaxial wafer can also provide a nitride based semiconductor optical device with a small blue shift.
  • Yet another aspect of the present invention relates to a method of fabricating a semiconductor light-emitting device, and the semiconductor light-emitting device includes a light-emitting layer of a strained hexagonal group III nitride.
  • the method comprises the steps of: (a) choosing a plane orientation for the light-emitting layer for estimating a direction of a piezoelectric field in the light-emitting layer; (b) forming a quantum well structure for estimating the direction of the piezoelectric field in the light-emitting layer, and p-type and n-type gallium nitride semiconductors to prepare a substrate product, the quantum well structure being formed in the chosen plane orientation; (c) measuring photoluminescence of the substrate product while applying voltage across the substrate product, to obtain a voltage dependency of photoluminescence; (d) estimating the direction of the piezoelectric field in the light-emitting layer based on the measured voltage dependency; (e) preparing a wafer having a primary surface for
  • the second gallium nitride based semiconductor region includes a gallium nitride based semiconductor layer and one or more p-type gallium nitride based semiconductor layers, and the gallium nitride based semiconductor layer has a band gap larger than that of the barrier layer.
  • the gallium nitride based semiconductor layer in the second gallium nitride based semiconductor region is adjacent to the light-emitting layer.
  • Each of the well layer and the barrier layer extends along a reference plane, and the reference plane tilts from a plane orthogonal to a reference axis extending in a direction of each of a c-axis, the a-axis and the m-axis.
  • a direction of the piezoelectric field is defined with reference to a direction from the second gallium nitride based semiconductor region toward the first gallium nitride based semiconductor region.
  • PL photoluminescence
  • EL electroluminescence
  • one aspect of the present invention provides a nitride based semiconductor optical device that includes a light-emitting layer of a strained hexagonal group III nitride and can suppress overflow of electrons from the light-emitting layer.
  • another aspect of the present invention provides an epitaxial wafer for this nitride based semiconductor optical device.
  • a further aspect of the present invention provides a method of fabricating a semiconductor light-emitting device including a light-emitting layer of a strained hexagonal group III nitride.
  • Fig. 1 is a schematic diagram showing the structure of a nitride based semiconductor optical device according to an embodiment.
  • the nitride based semiconductor optical device encompasses, for example, a semiconductor laser and a light-emitting diode.
  • a coordinate system S is shown.
  • the primary surface 11a of a substrate 11 is directed to the Z-axis direction and extends in the X-axis and Y-axis directions.
  • the X-axis is directed to in the a-axis direction.
  • the crystal axis in opposite to the ⁇ 0001> axis is represented by ⁇ 000-1>.
  • a nitride based semiconductor optical device LE1 has a structure suitable for a light-emitting diode.
  • the nitride based semiconductor optical device LE1 includes a first gallium nitride based semiconductor region 13, a light-emitting region 15, and a second gallium nitride based semiconductor region 17.
  • the light-emitting layer 15 includes an active layer 19, and the active layer 19 includes a well layer 21 and a barrier layer 23, which are alternately arranged.
  • the light-emitting layer 15 is provided between the first gallium nitride based semiconductor region 13 and the second gallium nitride based semiconductor region 17.
  • the first gallium nitride based semiconductor region 13 can include one or more n-type gallium nitride based semiconductor layers (in the present embodiment, gallium nitride based semiconductor layers 25, 27, and 29).
  • the second gallium nitride based semiconductor region 17 includes a gallium nitride based semiconductor layer 31 having a band gap larger than that of the barrier layer, and also includes one or more p-type gallium nitride based semiconductor layers (in the present embodiment, gallium nitride based semiconductor layers 33 and 35).
  • the well layer 21 extends along a reference plane SR1 tilting at a tilt angle ⁇ with respect to the plane that is orthogonal to a reference axis (shown by vector VC1), which extends in the c-axis direction.
  • the tilt angle ⁇ can be in the range of 59 degrees to less than 80 degrees. Alternatively, the tilt angle ⁇ can be in the range of greater than 150 degrees to less than 180 degrees.
  • the well layer 21 is strained, and the piezoelectric field of the well layer 21 includes a component of the direction that is opposite to the direction from the second gallium nitride based semiconductor region 17 toward the first gallium nitride based semiconductor region 13.
  • the gallium nitride based semiconductor layer 31 of the second gallium nitride based semiconductor region 17 is adjacent to the light-emitting layer 15.
  • the well layer 21 may be composed of a hexagonal gallium nitride based semiconductor, for example, a gallium nitride based semiconductor containing indium, such as InGaN.
  • the barrier layer 23 may be composed of a gallium nitride semiconductor, for example, GaN, InGaN, AlGaN, or AlGaInN.
  • the gallium nitride based semiconductor layer 31 of the second gallium nitride based semiconductor region 17 includes either an electron blocking layer or a cladding layer.
  • the electron blocking layer blocks electrons from the active layer, and the cladding layer confines carries and light.
  • the gallium nitride based semiconductor layer 31 of the second gallium nitride based semiconductor region 17 can be composed of, for example, p-type AIGaN.
  • the well layer 21 of, for example, InGaN incorporates internal strain due to stress (compressive stress) from the barrier layer.
  • the tilt angle a can be in the range of 62 degrees to less than 80 degrees. This nitride based semiconductor optical device can reduce the blue shift. Alternatively, the tilt angle ⁇ can be in the range of greater than 150 degrees to 170 degrees. This nitride based semiconductor optical device can reduce the blue shift.
  • Fig. 2 shows illustrations strained light-emitting layers and the directions of piezoelectric fields therein.
  • Parts (a) to (c) of Fig. 2 are views illustrating piezoelectric fields in light-emitting layers formed on a polar plane (c-plane).
  • Parts (d) and (e) of Fig. 2 are views illustrating piezoelectric fields in light-emitting layers formed on a nonpolar plane (a-plane, m-plane).
  • Parts (f) and (g) of Fig. 2 are views illustrating piezoelectric fields in light-emitting layers formed on a semipolar plane.
  • the light-emitting layer P includes barrier layers B1 and B2 and a well layer W1 which are formed on the polar plane (c-plane).
  • the well layer W1 is provided between the barrier layers B1 and B2.
  • the piezoelectric field E PZ in the well layer W1 is oriented in the direction from the p-type layer to the n-type layer.
  • the band bottom of the conduction band and the band bottom of the valence electrons descend in the direction from the n-type layer toward the p-type layer.
  • the reference symbol E C0 denotes an energy difference between the band bottom of the conduction band and the band bottom of the valence band.
  • a low forward-biased voltage is applied to the light-emitting layer P.
  • This voltage application increases the tilts of the band bottom of the conduction band and the band bottom of the valence band in this light-emitting layer P.
  • the reference symbol E C1 denotes an energy difference between the band bottom of the conduction band and the band bottom of the valence band.
  • the energy difference E C0 is larger than the energy difference E C1 .
  • a forward-biased high voltage is applied to the light-emitting layer P. In this voltage application, the tilts of the band bottom of the conduction band and the band bottom of the valence band decrease due to screening in this light-emitting layer P.
  • the reference symbol E C2 denotes an energy difference between the band bottom of the conduction band and the band bottom of the valence band.
  • the energy difference E C2 is larger than the energy difference E C0 . Change in the energy difference caused by the application of voltage leads to a blue shift.
  • the light-emitting layer NP includes barrier layers B3 and B4 and a well layer W2, which are formed on the nonpolar plane (a-plane, m-plane).
  • the well layer W2 is provided between the barrier layers B3 and B4. Since the well layer W2 is grown on a nonpolar plane, the piezoelectric field E PZ is zero.
  • the band bottom of the conduction band and the band bottom of the valence band descend in the direction from the p-type layer toward the n-type layer.
  • the reference symbol E NP0 denotes an energy difference between the band bottom of the conduction band and the band bottom of the valence band.
  • the well layer (light-emitting layer SP-) of plane orientation of the tilt angle range in the present embodiment acts as shown in parts (f) and (g) of Fig. 2 .
  • the well layer (light-emitting layer SP+) on a semipolar plane which is different from the plane orientation in the tilt angle range according to the present embodiment acts as shown in parts (a) to (c) of Fig. 2 .
  • Fig. 3 includes views illustrating strained light-emitting layers and the directions of piezoelectric fields therein. Parts (a) and (b) of Fig. 3 show light-emitting layers SP+ incorporating positive piezoelectric fields.
  • the light-emitting layer SP+ includes barrier layers B7 and B8 and a well layer W4.
  • the well layer W4 is provided between the barrier layers B7 and B8.
  • a gallium nitride based semiconductor layer P, adjacent to the light-emitting layer SP+, is shown which has a band gap larger than that of the barrier layer.
  • Parts (c) and (d) of Fig. 3 show a light-emitting layer SP- having a negative piezoelectric field, and in the figure, the gallium nitride based semiconductor layer P having a band gap larger than those of the barrier layers is adjacent to the light-emitting layer SP-.
  • the direction of the piezoelectric field in the well layer W3 is from the n-type layer toward the p-type layer, whereas the direction of the piezoelectric field in the gallium nitride based semiconductor layer P is from the p-type layer toward the n-type layer.
  • the n-type gallium nitride based semiconductor layer 25 in the first gallium nitride based semiconductor region 13 can be a Si-doped n-type AlGaN buffer layer having a thickness of, for example, 50 nanometers.
  • the n-type gallium nitride based semiconductor layer 27 can be a Si-doped n-type GaN layer having a thickness of, for example, 2000 nanometers.
  • the n-type gallium nitride based semiconductor layer 29 can be a Si-doped n-type InGaN buffer layer, and the indium fraction thereof is, for example, 0.02.
  • the thickness of the n-type gallium nitride based semiconductor layer 29 can be, for example, 100 nanometers.
  • the nitride based semiconductor optical device LE1 may be further provided with a substrate 11.
  • the substrate 11 is made of a hexagonal semiconductor In S Al T Ga 1-S-T N (0 ⁇ S ⁇ 1,0 ⁇ T ⁇ 1,0 ⁇ S+T ⁇ 1), such as GaN, InGaN, or AlGaN.
  • the primary surface 11a of the substrate 11 extends along a plane tilting at a tilt angle ⁇ in the range of 59 degrees to less than 80 degrees or greater than 150 degrees to less than 180 degrees with reference to the plane that is orthogonal to the c-axis (for example, shown by vector VC2) of the hexagonal semiconductor.
  • the tilt angle ⁇ is substantially equal to the tilt angle ⁇ , as long as a slight tilt of the crystal axis due to strain in the light-emitting layer 15 is neglected. Furthermore, the direction of the vector VC2 is substantially equal to that of the vector VC1, as long as a slight tilt of the crystal axis due to strain in the light-emitting layer 15 is neglected.
  • the first gallium nitride based semiconductor region 13, the light-emitting layer 15, and the second gallium nitride based semiconductor region 17 are arranged in the direction of a predetermined axis Ax (for example, the direction of the Z-axis) on the primary surface 11a of the substrate 11.
  • the direction of the predetermined axis Ax is different from the direction of the c-axis of the substrate 11.
  • this substrate 11 facilitates to provide the light-emitting layer 15 with plane orientation for the well layer such that the piezoelectric field in the well layer 21 includes a component of a direction that is opposite to the direction from the second gallium nitride based semiconductor region 17 toward the first gallium nitride based semiconductor region 13.
  • Fig. 4 is a diagram schematically showing the structure of a nitride based semiconductor optical device according to an embodiment.
  • the nitride based semiconductor optical device LD1 is, for example, a semiconductor laser.
  • Fig. 4 shows a coordinate system S.
  • the primary surface 13a of a substrate 13 is directed to the Z-axis, and extends in the X and Y directions.
  • the Y-axis is orientated in the direction of the m-axis.
  • the nitride based semiconductor optical device LD1 has a structure suitable for a semiconductor laser, and includes a first gallium nitride based semiconductor region 13, a light-emitting region 15, and a second gallium nitride based semiconductor region 17.
  • the light-emitting layer 15 includes an active layer 19, and the active layer 19 has a quantum-well structure that includes a well layer 21 and a barrier layer 23, which are alternately arranged.
  • the light-emitting layer 15 is provided between the first gallium nitride based semiconductor region 13 and the second gallium nitride based semiconductor region 17.
  • the first gallium nitride based semiconductor region 13 may include one or more n-type gallium nitride based semiconductor layers (in this embodiment, gallium nitride based semiconductor layers 55 and 57).
  • the second gallium nitride based semiconductor region 17 includes a gallium nitride based semiconductor layer 31 of a band gap larger than that of the barrier layers, and one or more p-type gallium nitride based semiconductor layers (in this embodiment, gallium nitride based semiconductor layers 51 and 53).
  • the piezoelectric field in the well layers 21 includes a component in the direction (positive direction of the Z-axis) that is opposite to the direction from the second gallium nitride based semiconductor region 17 toward the first gallium nitride based semiconductor region 13.
  • the n-type gallium nitride based semiconductor layer 55 in the first gallium nitride based semiconductor region 13 can be, for example, a Si-doped n-type AlGaN cladding layer, its thickness can be, for example, 2300 nanometers and its fraction of aluminum can be, for example, 0.04.
  • the n-type gallium nitride based semiconductor layer 55 can be, for example, a Si-doped n-type GaN layer, and its thickness can be, for example, 50 nanometers.
  • the light-emitting layer 15 may include first and second optical guide layers 59a and 59b.
  • the active layer 19 is provided between the optical guide layers 59a and 59b.
  • the optical guide layers 59a and 59b may be composed of, for example, undoped InGaN, and its fraction of indium can be, for example, 0.06 and its thickness can be, for example, 100 nanometers.
  • the p-type gallium nitride based semiconductor layer 31 of the second gallium nitride based semiconductor region 17 can be, for example, a Mg-doped p-type AlGaN layer, its fraction of aluminum can be, for example, 0.18 and its thickness can be, for example, 20 nanometers.
  • the p-type gallium nitride based semiconductor layer 51 is a Mg-doped p-type AlGaN cladding layer, and its fraction of aluminum can be, for example, 0.06.
  • the thickness of p-type gallium nitride based semiconductor layer 51 can be, for example, 400 nanometers.
  • the p-type gallium nitride based semiconductor layer 53 can be a Mg-doped p + -type GaN contact layer, and its thickness can be, for example, 50 nanometers.
  • An undoped GaN layer 61 having a thickness of, for example, 50 nanometers is grown on the active layer 19.
  • An insulating film 63 having a stripe window is formed above the semiconductor layers (13, 15, 17), and an electrode is formed on the insulating film 63 and the semiconductor layers (13, 15, 17).
  • a first electrode (for example, anode) 65 is formed on the contact layer 53, and a second electrode (for example, cathode) 67 is formed on the back side 13b of the substrate.
  • the active layer 19 generates laser beam in response to the injection of carriers via these electrodes. Since the piezoelectric field in the active layer 19 is small, the blue shift can be also small.
  • the conduction band does not have any dip at the interface between the light-emitting layer 19 and the gallium nitride semiconductor 31, the light-emitting device LD1 can exhibit enhanced confinement of electron.
  • the reference plane SR1 may tilt toward the direction of the a-axis.
  • the tilt toward the direction of the a-axis enables the cleavage of the m-plane.
  • the reference plane SR1 may tilt toward the direction of the m-axis. The tilt toward the direction of the m-axis enables the cleavage of the a-plane.
  • Figs. 5 to 7 include diagrams showing primary steps in a method of fabricating a nitride based semiconductor optical device according to an embodiment, and in the method of fabricating an epitaxial wafer for this optical device.
  • a substrate 71 for forming a nitride based semiconductor optical device and an epitaxial wafer is prepared.
  • the substrate 71 can be made of, for example, a hexagonal semiconductor In S Al T Ga 1-S-T N (0 ⁇ S ⁇ 1, 0 ⁇ T ⁇ 1, 0 ⁇ S+T ⁇ 1) and includes a primary surface 71a and a back surface 71b.
  • semiconductor crystals is epitaxially grown on the primary surface 71a of the substrate 71 with an off angle selected such that a negative piezoelectric field is generated in the well layer.
  • the substrate 71 having a primary surface 71a with the above-mentioned tilt angle can form an epitaxial semiconductor region such that the well layer in the active layer tilts from the c-plane within the above-mentioned angle range.
  • the gallium nitride based semiconductor layers 25, 27, and 29 are epitaxially grown in sequence on the primary surface 71 c of the substrate 71.
  • the n-type AIGaN layer 25 is formed as, for example, an interlayer, which covers the entire surface of the substrate 71, and is grown, for example, at 1100°C.
  • the thickness of the n-type AlGaN layer 25 is, for example, 50 nanometers.
  • the n-type GaN layer 27 is grown on the n-type AIGaN layer 25 at 950°C.
  • the n-type GaN layer 27 is provided for supplying n-type carriers, for example, and has a thickness of 2000 nanometers.
  • a raw material gas G2 containing a gallium source and a nitrogen source is supplied to the reactor 10 to grow undoped GaN at a growth temperature T B .
  • the thickness of the GaN barrier layer is, for example, 15 nanometers. Since the barrier layer 77 is grown on the primary surface 73 a, the surface of the barrier layer 77 has the same surface structure as that of the primary surface 73a.
  • a raw material gas G3 containing a gallium source, an indium source, and a nitrogen source is supplied to the reactor 10 to grow undoped InGaN.
  • the well layer 79 may have a thickness of 1 to 10 nanometers.
  • the indium composition X of the In x Ga 1-X N well layer 79 may be greater than 0.05.
  • the indium composition of In x Ga 1-X N in the well layer 79 may be less than 0.5.
  • InGaN having an indium composition in the above range can be grown to form a light-emitting device with a emitting wavelength of 370 to 650 nanometers.
  • the well layer 79 is grown at a growth temperature T W within the range of, for example, 600°C to 900°C.
  • the temperature of the reactor 10 is changed from the growth temperature T W to the growth temperature T B .
  • a nitrogen source gas such as ammonia
  • a barrier layer 81 composed of a gallium nitride based semiconductor is grown while a raw material gas G4 is fed into the reactor 10 in which the growth temperature T B is maintained.
  • the barrier layer 81 is composed of, for example, GaN, and has a thickness of, for example, 15 nanometers. Since the primary surface of the barrier layer 81 is epitaxially grown on the primary surface of the well layer 79, and accordingly, the surface of the barrier layer 81 has the same surface structure as that of the well layer 79.
  • step S107 similar growth is repeatedly performed to complete an active layer 75 having a quantum-well structure, as shown in part (a) of Fig. 7 .
  • the active layer 75 includes three well layers 79 and four barrier layers 77 and 81.
  • step S108 a light-emitting layer 83 is formed by growing a necessary semiconductor layer(s) by supplying a raw material gas G5.
  • the dopant concentration N 37 of the second p-type contact layer 35 is larger than the dopant concentration N 35 of the first p-type contact layer 33.
  • the growth temperature of the electron blocking layer 31 and the p-type contact layers 33 and 35 is, for example, 1100°C.
  • the second conductivity-type gallium nitride based semiconductor region 31 is formed to complete an epitaxial wafer E, which is shown in part (c) of Fig. 7 . If necessary, a pair of optical guide layers for optical guiding in a semiconductor laser may be grown. These optical guide layers sandwich the active layer, and may be composed of, for example, InGaN or GaN.
  • the first conductivity-type gallium nitride based semiconductor region 73, the light-emitting layer 83, and the second conductivity-type gallium nitride based semiconductor layer 85 may be arranged in the axial direction normal to the primary surface 71a of the substrate 71.
  • the direction of the c-axis of the hexagonal semiconductor is different from the direction of the axis that is normal to the primary surface 71a of the substrate 71.
  • the direction of the epitaxial growth is the direction of the c-axis, and is different from the direction in which the semiconductor layers 73, 83, and 85 are laminated.
  • the first and second regions 12a and 12b are alternately arranged in a predetermined direction in a plane where the primary surface extends.
  • the predetermined direction may be the direction of the a-axis of the gallium nitride.
  • the device formed on a semipolar plane having a specific off angle range generates a negative piezoelectric field in the light-emitting layer.
  • the characteristic curve PLB(-) of part (b) of Fig. 10 shows characteristics of this device. Before the bias reaches the EL light-emission voltage, the peak wavelength of the PL light-emission slightly shifts toward shorter wavelengths with an increase in the bias.
  • a wafer is prepared which has a primary surface that can fabricate a light-emitting layer with the selected plane orientation.
  • a semiconductor laminate for the semiconductor light-emitting device is formed on the primary surface of this wafer.
  • the semiconductor laminate can include the first gallium nitride based semiconductor region 13, the light-emitting layer 15, and the second gallium nitride based semiconductor region 17.
  • the light-emitting layer 15 includes well layers and barrier layers. Each of the well layers and the barrier layers extends along a reference plane tilting from planes orthogonal to the reference axes that extend in the directions of the c-axis, the a-axis, and the m-axis.
  • the 75-degree-off plane in the m-direction and the 58-degrees-off plane in the a-direction exhibit small blue shifts, whereas the device on the c-plane exhibits a very large blue shift.
  • the 75-degree-off plane in the m-direction can reduce blue shift. This is advantageous in that the color tone of a light-emitting diode does not vary depending on an applied current and that a laser diode provides a long wavelength oscillation.
  • TMG (98.7 ⁇ mol/min), NH 3 (5 slm), and SiH 4 were supplied to the reactor to grow an n-type GaN layer 92 on the n-type AlGaN layer 91 at a temperature of 1150°C.
  • the thickness of the n-type GaN layer 92 was 50 nanometers, and the growth rate of the n-type GaN layer 92 was 58.0 nm/min.
  • the temperature of the reactor was changed from 870°C to 745°C, and TMG (15.6 ⁇ mol/min), TMI (29.0 ⁇ mol/min), and NH 3 (8 slm) were supplied to the reactor to grow an undoped InGaN well layer on the InGaN layer at a temperature of 745°C.
  • the thickness of the InGaN layer was 3 nanometers, and the growth rate of the InGaN layer was 3.1 nm/min.
  • the In composition of the undoped InGaN layer was 0.25.
  • the growth of the well layer, the protective layer, and the barrier layer were repeated twice, and a well layer and a protective layer were further grown thereon. Then, TMG (13.0 ⁇ mol/min), TMI (4.6 ⁇ mol/min), and NH 3 (6 slm) were supplied to the reactor to grow an undoped InGaN layer 93b for an optical guide layer on the active layer 94 at a temperature of 840°C.
  • the thickness of the InGaN layer 93b was 65 nanometers, and the growth rate of the InGaN layer 93b was 6.7 nm/min.
EP09812924A 2008-09-11 2009-01-22 Nitride semiconductor optical device, epitaxial wafer for nitride semiconductor optical device, and method for manufacturing semiconductor light-emitting device Withdrawn EP2323180A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008233806 2008-09-11
PCT/JP2009/050992 WO2010029775A1 (ja) 2008-09-11 2009-01-22 窒化物系半導体光素子、窒化物系半導体光素子のためのエピタキシャルウエハ、及び半導体発光素子を製造する方法

Publications (1)

Publication Number Publication Date
EP2323180A1 true EP2323180A1 (en) 2011-05-18

Family

ID=42005039

Family Applications (1)

Application Number Title Priority Date Filing Date
EP09812924A Withdrawn EP2323180A1 (en) 2008-09-11 2009-01-22 Nitride semiconductor optical device, epitaxial wafer for nitride semiconductor optical device, and method for manufacturing semiconductor light-emitting device

Country Status (6)

Country Link
US (4) US7858963B2 (ja)
EP (1) EP2323180A1 (ja)
KR (1) KR101142672B1 (ja)
CN (1) CN101874309B (ja)
TW (1) TW201011950A (ja)
WO (1) WO2010029775A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103959580A (zh) * 2011-10-24 2014-07-30 住友电气工业株式会社 氮化物半导体发光元件

Families Citing this family (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007220865A (ja) * 2006-02-16 2007-08-30 Sumitomo Chemical Co Ltd ３族窒化物半導体発光素子およびその製造方法
US20110180781A1 (en) * 2008-06-05 2011-07-28 Soraa, Inc Highly Polarized White Light Source By Combining Blue LED on Semipolar or Nonpolar GaN with Yellow LED on Semipolar or Nonpolar GaN
US20090309127A1 (en) * 2008-06-13 2009-12-17 Soraa, Inc. Selective area epitaxy growth method and structure
US8847249B2 (en) * 2008-06-16 2014-09-30 Soraa, Inc. Solid-state optical device having enhanced indium content in active regions
US20100006873A1 (en) * 2008-06-25 2010-01-14 Soraa, Inc. HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN
US8143148B1 (en) 2008-07-14 2012-03-27 Soraa, Inc. Self-aligned multi-dielectric-layer lift off process for laser diode stripes
US8805134B1 (en) 2012-02-17 2014-08-12 Soraa Laser Diode, Inc. Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices
US8259769B1 (en) 2008-07-14 2012-09-04 Soraa, Inc. Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
CN102144294A (zh) 2008-08-04 2011-08-03 Soraa有限公司 使用非极性或半极性的含镓材料和磷光体的白光器件
KR101142672B1 (ko) * 2008-09-11 2012-05-11 스미토모덴키고교가부시키가이샤 질화물계 반도체 광소자, 질화물계 반도체 광소자용의 에피택셜 웨이퍼, 및 반도체 발광 소자를 제조하는 방법
JP5136437B2 (ja) * 2009-01-23 2013-02-06 住友電気工業株式会社 窒化物系半導体光素子を作製する方法
US8247886B1 (en) 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
US8422525B1 (en) * 2009-03-28 2013-04-16 Soraa, Inc. Optical device structure using miscut GaN substrates for laser applications
US8252662B1 (en) 2009-03-28 2012-08-28 Soraa, Inc. Method and structure for manufacture of light emitting diode devices using bulk GaN
US8837545B2 (en) 2009-04-13 2014-09-16 Soraa Laser Diode, Inc. Optical device structure using GaN substrates and growth structures for laser applications
US8254425B1 (en) 2009-04-17 2012-08-28 Soraa, Inc. Optical device structure using GaN substrates and growth structures for laser applications
US9531164B2 (en) 2009-04-13 2016-12-27 Soraa Laser Diode, Inc. Optical device structure using GaN substrates for laser applications
US8294179B1 (en) 2009-04-17 2012-10-23 Soraa, Inc. Optical device structure using GaN substrates and growth structures for laser applications
US8242522B1 (en) 2009-05-12 2012-08-14 Soraa, Inc. Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm
US8634442B1 (en) 2009-04-13 2014-01-21 Soraa Laser Diode, Inc. Optical device structure using GaN substrates for laser applications
US8416825B1 (en) 2009-04-17 2013-04-09 Soraa, Inc. Optical device structure using GaN substrates and growth structure for laser applications
US9250044B1 (en) 2009-05-29 2016-02-02 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser diode dazzling devices and methods of use
US9829780B2 (en) 2009-05-29 2017-11-28 Soraa Laser Diode, Inc. Laser light source for a vehicle
US10108079B2 (en) 2009-05-29 2018-10-23 Soraa Laser Diode, Inc. Laser light source for a vehicle
US8247887B1 (en) 2009-05-29 2012-08-21 Soraa, Inc. Method and surface morphology of non-polar gallium nitride containing substrates
US9800017B1 (en) 2009-05-29 2017-10-24 Soraa Laser Diode, Inc. Laser device and method for a vehicle
US8509275B1 (en) 2009-05-29 2013-08-13 Soraa, Inc. Gallium nitride based laser dazzling device and method
US8427590B2 (en) 2009-05-29 2013-04-23 Soraa, Inc. Laser based display method and system
US20110056429A1 (en) * 2009-08-21 2011-03-10 Soraa, Inc. Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices
US8314429B1 (en) 2009-09-14 2012-11-20 Soraa, Inc. Multi color active regions for white light emitting diode
US8355418B2 (en) 2009-09-17 2013-01-15 Soraa, Inc. Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates
US8750342B1 (en) 2011-09-09 2014-06-10 Soraa Laser Diode, Inc. Laser diodes with scribe structures
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
KR101368906B1 (ko) 2009-09-18 2014-02-28 소라, 인코포레이티드 전력 발광 다이오드 및 전류 밀도 작동 방법
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
JP4835741B2 (ja) * 2009-09-30 2011-12-14 住友電気工業株式会社 半導体発光素子を作製する方法
JP2011146650A (ja) * 2010-01-18 2011-07-28 Sumitomo Electric Ind Ltd ＧａＮ系半導体発光素子およびその製造方法
JP5749888B2 (ja) * 2010-01-18 2015-07-15 住友電気工業株式会社 半導体素子及び半導体素子を作製する方法
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US20110182056A1 (en) * 2010-06-23 2011-07-28 Soraa, Inc. Quantum Dot Wavelength Conversion for Optical Devices Using Nonpolar or Semipolar Gallium Containing Materials
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US9927611B2 (en) 2010-03-29 2018-03-27 Soraa Laser Diode, Inc. Wearable laser based display method and system
US8451876B1 (en) 2010-05-17 2013-05-28 Soraa, Inc. Method and system for providing bidirectional light sources with broad spectrum
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
WO2012058444A1 (en) * 2010-10-27 2012-05-03 The Regents Of The University Of California High power, high efficiency and low efficiency droop iii-nitride light-emitting diodes on semipolar {20-2-1} substrates
US8816319B1 (en) 2010-11-05 2014-08-26 Soraa Laser Diode, Inc. Method of strain engineering and related optical device using a gallium and nitrogen containing active region
US8975615B2 (en) 2010-11-09 2015-03-10 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment of contact regions of gallium and nitrogen containing material
US9048170B2 (en) 2010-11-09 2015-06-02 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment
JP5781292B2 (ja) * 2010-11-16 2015-09-16 ローム株式会社 窒化物半導体素子および窒化物半導体パッケージ
US8809852B2 (en) * 2010-11-30 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same
US9595813B2 (en) 2011-01-24 2017-03-14 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a substrate member
US9025635B2 (en) 2011-01-24 2015-05-05 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a support member
US9318875B1 (en) 2011-01-24 2016-04-19 Soraa Laser Diode, Inc. Color converting element for laser diode
US9093820B1 (en) 2011-01-25 2015-07-28 Soraa Laser Diode, Inc. Method and structure for laser devices using optical blocking regions
US9287684B2 (en) 2011-04-04 2016-03-15 Soraa Laser Diode, Inc. Laser package having multiple emitters with color wheel
US8686397B2 (en) 2011-06-10 2014-04-01 The Regents Of The University Of California Low droop light emitting diode structure on gallium nitride semipolar substrates
JP2013033930A (ja) * 2011-06-29 2013-02-14 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体素子、及び、ｉｉｉ族窒化物半導体素子の製造方法
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US9646827B1 (en) * 2011-08-23 2017-05-09 Soraa, Inc. Method for smoothing surface of a substrate containing gallium and nitrogen
US8971370B1 (en) 2011-10-13 2015-03-03 Soraa Laser Diode, Inc. Laser devices using a semipolar plane
US9020003B1 (en) 2012-03-14 2015-04-28 Soraa Laser Diode, Inc. Group III-nitride laser diode grown on a semi-polar orientation of gallium and nitrogen containing substrates
WO2013141617A1 (en) * 2012-03-21 2013-09-26 Seoul Opto Device Co., Ltd. Method of fabricating non-polar gallium nitride-based semiconductor layer, nonpolar semiconductor device, and method of fabricating the same
US9343871B1 (en) 2012-04-05 2016-05-17 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US9800016B1 (en) 2012-04-05 2017-10-24 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US10559939B1 (en) 2012-04-05 2020-02-11 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US9099843B1 (en) 2012-07-19 2015-08-04 Soraa Laser Diode, Inc. High operating temperature laser diodes
US8971368B1 (en) 2012-08-16 2015-03-03 Soraa Laser Diode, Inc. Laser devices having a gallium and nitrogen containing semipolar surface orientation
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US9166372B1 (en) 2013-06-28 2015-10-20 Soraa Laser Diode, Inc. Gallium nitride containing laser device configured on a patterned substrate
US9520695B2 (en) 2013-10-18 2016-12-13 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser device having confinement region
US9379525B2 (en) 2014-02-10 2016-06-28 Soraa Laser Diode, Inc. Manufacturable laser diode
US9368939B2 (en) 2013-10-18 2016-06-14 Soraa Laser Diode, Inc. Manufacturable laser diode formed on C-plane gallium and nitrogen material
US9362715B2 (en) 2014-02-10 2016-06-07 Soraa Laser Diode, Inc Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
US9209596B1 (en) 2014-02-07 2015-12-08 Soraa Laser Diode, Inc. Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates
US9520697B2 (en) 2014-02-10 2016-12-13 Soraa Laser Diode, Inc. Manufacturable multi-emitter laser diode
US9871350B2 (en) 2014-02-10 2018-01-16 Soraa Laser Diode, Inc. Manufacturable RGB laser diode source
JP2015170803A (ja) * 2014-03-10 2015-09-28 住友電気工業株式会社 ＩＩＩ族窒化物半導体素子、ｐ型コンタクト構造、ＩＩＩ族窒化物半導体素子を作製する方法
US9564736B1 (en) 2014-06-26 2017-02-07 Soraa Laser Diode, Inc. Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode
US9246311B1 (en) 2014-11-06 2016-01-26 Soraa Laser Diode, Inc. Method of manufacture for an ultraviolet laser diode
US9653642B1 (en) 2014-12-23 2017-05-16 Soraa Laser Diode, Inc. Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes
US9666677B1 (en) 2014-12-23 2017-05-30 Soraa Laser Diode, Inc. Manufacturable thin film gallium and nitrogen containing devices
US11437775B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. Integrated light source using a laser diode
US10879673B2 (en) 2015-08-19 2020-12-29 Soraa Laser Diode, Inc. Integrated white light source using a laser diode and a phosphor in a surface mount device package
US11437774B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. High-luminous flux laser-based white light source
US10938182B2 (en) 2015-08-19 2021-03-02 Soraa Laser Diode, Inc. Specialized integrated light source using a laser diode
US9787963B2 (en) 2015-10-08 2017-10-10 Soraa Laser Diode, Inc. Laser lighting having selective resolution
JP6696499B2 (ja) * 2015-11-24 2020-05-20 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
US10771155B2 (en) 2017-09-28 2020-09-08 Soraa Laser Diode, Inc. Intelligent visible light with a gallium and nitrogen containing laser source
JP2018050063A (ja) * 2017-11-02 2018-03-29 ローム株式会社 半導体発光素子
US10222474B1 (en) 2017-12-13 2019-03-05 Soraa Laser Diode, Inc. Lidar systems including a gallium and nitrogen containing laser light source
US10551728B1 (en) 2018-04-10 2020-02-04 Soraa Laser Diode, Inc. Structured phosphors for dynamic lighting
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system
US11228158B2 (en) 2019-05-14 2022-01-18 Kyocera Sld Laser, Inc. Manufacturable laser diodes on a large area gallium and nitrogen containing substrate
US10903623B2 (en) 2019-05-14 2021-01-26 Soraa Laser Diode, Inc. Method and structure for manufacturable large area gallium and nitrogen containing substrate

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3583239B2 (ja) 1996-01-25 2004-11-04 花王株式会社 皮膚外用剤
JP3816176B2 (ja) 1996-02-23 2006-08-30 富士通株式会社 半導体発光素子及び光半導体装置
JP2901921B2 (ja) 1996-06-20 1999-06-07 株式会社エイ・ティ・アール光電波通信研究所 半導体レーザ装置
JP3955367B2 (ja) * 1997-09-30 2007-08-08 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 光半導体素子およびその製造方法
US6849472B2 (en) * 1997-09-30 2005-02-01 Lumileds Lighting U.S., Llc Nitride semiconductor device with reduced polarization fields
JP3519990B2 (ja) 1998-12-09 2004-04-19 三洋電機株式会社 発光素子及びその製造方法
JP2000261106A (ja) 1999-01-07 2000-09-22 Matsushita Electric Ind Co Ltd 半導体発光素子、その製造方法及び光ディスク装置
JP3711020B2 (ja) * 1999-12-27 2005-10-26 三洋電機株式会社 発光素子
US6803596B2 (en) * 1999-12-27 2004-10-12 Sanyo Electric Co., Ltd. Light emitting device
US6683327B2 (en) * 2001-11-13 2004-01-27 Lumileds Lighting U.S., Llc Nucleation layer for improved light extraction from light emitting devices
JP4307113B2 (ja) * 2002-03-19 2009-08-05 宣彦 澤木 半導体発光素子およびその製造方法
US7098487B2 (en) * 2002-12-27 2006-08-29 General Electric Company Gallium nitride crystal and method of making same
JP4665394B2 (ja) * 2003-12-09 2011-04-06 日亜化学工業株式会社 窒化物半導体レーザ素子
US6943381B2 (en) 2004-01-30 2005-09-13 Lumileds Lighting U.S., Llc III-nitride light-emitting devices with improved high-current efficiency
US7846757B2 (en) 2005-06-01 2010-12-07 The Regents Of The University Of California Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices
JP4890755B2 (ja) 2004-11-04 2012-03-07 ソニー株式会社 半導体レーザおよびその製造方法
US7804100B2 (en) * 2005-03-14 2010-09-28 Philips Lumileds Lighting Company, Llc Polarization-reversed III-nitride light emitting device
US7755101B2 (en) 2005-04-11 2010-07-13 Mitsubishi Denki Kabushiki Kaisha Semiconductor light emitting device
TWI390633B (zh) 2005-07-13 2013-03-21 Japan Science & Tech Agency 半極性氮化物膜缺陷減少之側向成長方法
JP2007235107A (ja) 2006-02-02 2007-09-13 Mitsubishi Electric Corp 半導体発光素子
JP2008177438A (ja) 2007-01-19 2008-07-31 Sumitomo Electric Ind Ltd 窒化物半導体発光素子
JP2008182069A (ja) * 2007-01-25 2008-08-07 Toshiba Corp 半導体発光素子
KR101142672B1 (ko) * 2008-09-11 2012-05-11 스미토모덴키고교가부시키가이샤 질화물계 반도체 광소자, 질화물계 반도체 광소자용의 에피택셜 웨이퍼, 및 반도체 발광 소자를 제조하는 방법

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2010029775A1 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103959580A (zh) * 2011-10-24 2014-07-30 住友电气工业株式会社 氮化物半导体发光元件
CN103959580B (zh) * 2011-10-24 2016-09-14 住友电气工业株式会社 氮化物半导体发光元件

Also Published As

Publication number Publication date
US8067257B2 (en) 2011-11-29
KR101142672B1 (ko) 2012-05-11
US20120080659A1 (en) 2012-04-05
US20100213439A1 (en) 2010-08-26
US20110042644A2 (en) 2011-02-24
KR20100085123A (ko) 2010-07-28
CN101874309B (zh) 2013-01-30
WO2010029775A1 (ja) 2010-03-18
US20110057167A1 (en) 2011-03-10
US20100297784A1 (en) 2010-11-25
CN101874309A (zh) 2010-10-27
US7851243B1 (en) 2010-12-14
TW201011950A (en) 2010-03-16
US7858963B2 (en) 2010-12-28

Similar Documents

Publication Publication Date Title
US7851243B1 (en) Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device
JP4924185B2 (ja) 窒化物半導体発光素子
US8548021B2 (en) III-nitride semiconductor laser, and method for fabricating III-nitride semiconductor laser
JP4450112B2 (ja) 窒化物系半導体光素子
WO2010141943A1 (en) LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES
KR101231427B1 (ko) 질화물계 반도체 발광 소자
KR20090130256A (ko) Ⅲ족 질화물 반도체 레이저
Okamoto et al. Pure blue laser diodes based on nonpolar m-plane gallium nitride with InGaN waveguiding layers
US6462354B1 (en) Semiconductor device and semiconductor light emitting device
JP4835741B2 (ja) 半導体発光素子を作製する方法
JP5252042B2 (ja) Ｉｉｉ族窒化物半導体発光素子、及びｉｉｉ族窒化物半導体発光素子を作製する方法
US20130105762A1 (en) Nitride semiconductor light emitting device, method of fabricating nitride semiconductor light emitting device
JP5332959B2 (ja) 窒化物系半導体光素子
JP4404164B1 (ja) 半導体発光素子を製造する方法
JP2011205161A (ja) 半導体発光素子を作製する方法

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20100407

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA RS

DAX Request for extension of the european patent (deleted)
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Effective date: 20150622