EP2186143A2 - Structure électroluminescente - Google Patents

Structure électroluminescente

Info

Publication number
EP2186143A2
EP2186143A2 EP08830682A EP08830682A EP2186143A2 EP 2186143 A2 EP2186143 A2 EP 2186143A2 EP 08830682 A EP08830682 A EP 08830682A EP 08830682 A EP08830682 A EP 08830682A EP 2186143 A2 EP2186143 A2 EP 2186143A2
Authority
EP
European Patent Office
Prior art keywords
light
quantum well
emitting structure
doped region
quantum wells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP08830682A
Other languages
German (de)
English (en)
Other versions
EP2186143B1 (fr
Inventor
Adrian Stefan Avramescu
Hans-Jürgen LUGAUER
Matthias Peter
Stephan Miller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of EP2186143A2 publication Critical patent/EP2186143A2/fr
Application granted granted Critical
Publication of EP2186143B1 publication Critical patent/EP2186143B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Definitions

  • the invention relates to a light-emitting structure containing indium-gallium-nitride quantum wells.
  • indium gallium nitride quantum wells (hereinafter called InGaN quantum wells) are separated by (In) GaN barrier layers.
  • the heterojunction between the quantum wells and the barrier layers forms a potential barrier, which makes the injection of charge carriers, that is of electrons and holes, more difficult.
  • the potential barriers of heterojunction arise from the high piezoelectric fields between the quantum wells and the barrier layers. Since the number of quantum wells also increases the number of heterojunctions, it is difficult to construct a light emitting structure containing a plurality of quantum wells.
  • An object to be solved is to provide a light-emitting structure having a high radiation efficiency.
  • a light-emitting structure comprising a p-doped region and an n-doped region is provided.
  • the p-doped region is intended for injection of holes.
  • the n-doped region is intended for injection of electrons.
  • At least one InGaN quantum well of a first variety is arranged between the said areas.
  • a plurality of quantum wells of the first kind are arranged between the regions.
  • the quantum wells of the first kind are separated from each other by (In) GaN barrier layers of a first kind, that is to say barrier layers of a first kind, which may contain at least GaN and optionally additionally indium.
  • At least one InGaN quantum well of a second variety is provided.
  • the quantum well of the second variety is characterized by the fact that it has a higher indium content than the quantum well of the first kind.
  • the quantum well of the first variety has a relatively low indium content and the quantum well of the second variety has a relatively high indium content.
  • the light-emitting structure thus contains an active zone, which is in particular formed from a multiplicity of quantum wells with a low indium content, which are embedded between barrier layers.
  • at least one quantum well with a high indium content is provided in the active zone.
  • the at least one quantum well of the first species adjoins the n-doped region, while the at least one quantum well of the second species is arranged adjacent to the p-doped region.
  • the quantum well of the first kind is thus arranged on the n-side of the active zone, while the quantum well of the second sort is arranged on the p-side of the active zone of the structure.
  • This construction makes it possible to further inject already escaped charge carriers, thereby increasing the efficiency of the light-emitting Component can be improved.
  • the Vo results in the hetero-transitions to the barrier layers. In particular, this enables the effective injection of holes into the quantum well structure compared to the case of a quantum well structure with a high indium content.
  • the potential barrier on the side of the p-doped region can be controlled by controlling the p-type doping and choosing a suitable doping profile in the Be reduced near the quantum well structure.
  • magnesium is used as the p-type dopant.
  • the quantum wells are configured such that the quantum well of the first type emits light in the UV range, while the second type quantum well emits light in the blue-green range.
  • the indium content of the quantum wells of the first variety is adjusted so that they emit radiation in a wavelength range between 370 nm and 440 nm.
  • the wavelength of the radiation emitted by the quantum wells of the first type is in particular between 370 nm and 420 nm.
  • the barrier layers of the first type are formed of InGaN, the wavelength is in particular between 390 nm and 440 nm.
  • the indium content of the quantum wells of the first variety is preferably enthal
  • the thickness of the quantum wells of the first kind is preferably between 2 nm and 7 nm, in particular between 2 nm and 4 nm.
  • the indium content of the barrier layers of the first grade is adjusted to be less than 5%.
  • the first-species barrier layers contain In x Ga 1 -X N, where x ⁇ 0.05.
  • the difference between the indium content in the barrier layers of the first variety and the quantum wells of the first variety should be less than 7%. Most preferably, the difference should be less than 5%.
  • the indium content of the quantum well of the second variety is adjusted so that it emits radiation in a wavelength range between 440 nm and 580 nm.
  • the indium content of the second type quantum well is preferably between 12% and 25%.
  • the quantum well of the second kind contains In x Gai- x N, where 0.12 ⁇ x ⁇ 0.25.
  • the thickness of the second type quantum well is preferably between 2 nm and 7 nm, in particular between 2 nm and 4 nm.
  • the doping and the doping profile of the barrier layers can be suitably adjusted.
  • the barrier is one l / cm 3 .
  • the second type barrier layer is doped with silicon at a concentration of not more than 5 ⁇ 10 17 l / cm 3 .
  • the second-type barrier layer is the barrier layer between the high indium quantum well and the low indium quantum well.
  • the thickness of the barrier layers is preferably between 3 nm and 15 nm, in particular between 6 nm and 12 nm.
  • the thickness of the barrier layers of the first grade and the thickness of the barrier layer of the second species can be chosen to be the same or different.
  • the number of quantum wells of the first kind can also be set.
  • the number of quantum wells is preferably between 1 and 30. Admittedly, the side of the quantum well of the second variety has higher potential barriers. However, these can be replaced by a suitable p
  • Doping can be reduced, so that a sufficiently good hole line is guaranteed.
  • the hole line decreases towards the quantum wells of the first variety.
  • the potential barrier is lowered. This can be achieved by a relatively low indium content in the quantum wells of the first variety.
  • the indium content is advantageously lower in the quantum wells of the first kind than in the quantum well of the second sort.
  • the difference between the indium content of the first-type quantum wells and the indium content of the first-type barrier layers is preferably reduced, which can be achieved by increasing the indium content in the barrier layers.
  • the reduced difference leads to a lower inclusion of charge carriers in the
  • Quantum wells Therefore, advantageously, a plurality of quantum wells of the first kind are used, while a quantum well of the second kind may be sufficient.
  • the number of quantum wells of the first type is thus preferably greater than the number of quantum wells of the second type.
  • the structure described herein can be used to improve the efficiency and color rendering of a phosphor.
  • the phosphor can be in pure form and thus emit in a preferred wavelength range.
  • a mixture of phosphors may be considered that emits a relatively broad spectrum of wavelengths.
  • the phosphor or mixture of phosphors can be considered for the radiation peaks emitted by the structure.
  • the structure described herein may be used primarily in conjunction with a phosphor or mixtures of phosphors having emission wavelengths similar to those of the quantum wells of the structure.
  • the phosphor can be optically pumped by the shortwave light emitted by the structure.
  • the resulting radiated spectrum then shows, for example, an increased emission in the blue or green range with a broadened background emission in the blue or green range.
  • This broadband blue or broadband green emission is perceived by the human eye as more pleasant or softer than the quantum well light emitted in a relatively narrow wavelength range.
  • the proportion of short-wave light remaining after absorption in the phosphor can be absorbed by a corresponding absorber material which may be present as a coating or as an encapsulation.
  • a component with a light-emitting structure in which at least one phosphor downstream of the light-emitting structure in the emission direction of the quantum wells is optically pumped by the light of the quantum wells, in particular the quantum wells of the first kind.
  • the phosphor can have the quantum wells in pure form or as a mixture of several substances.
  • the phosphor can be present in separate grades, which in turn emit light in different wavelength ranges.
  • FIG. 1 shows a light-emitting structure in a schematic cross section.
  • FIG. 2 shows the spectrum emitted by the light-emitting structure as a function of the wavelength.
  • FIG. 3 shows a component with a light-emitting structure and a mixture of dyes.
  • FIG. 4 shows a component with a light-emitting structure and different phosphors.
  • FIG. 5 shows the light emitted by a component according to FIG. 4 as a function of the wavelength.
  • FIG. 6 shows the light emitted by a component according to FIG. 3 with a broad peak in the region of the blue light as a function of the wavelength.
  • FIG. 7 shows the light emitted by a component according to FIG. 6
  • FIG. 1 shows a light-emitting structure 7 with a stack of superimposed layers.
  • an n-doped region 2 On the underside of the structure is an n-doped region 2, which is intended to inject electrons into the light-emitting structure upon application of an electrical voltage.
  • a plurality of quantum wells 4 of a first kind are arranged above the n-doped region.
  • the quantum wells 4 of the first kind contain InGaN, the indium content being selected so that the quantum wells emit radiation when excited in the range of UV or violet light.
  • the quantum wells 4 of the first kind are separated from each other by barrier layers 3 of a first kind.
  • a quantum well 5 of a second type is arranged, which also contains indium gallium nitride, wherein the indium content of the quantum well 5 of the second variety is selected such that emission takes place in the blue or green spectral range.
  • the second type quantum well 5 is separated from a directly adjacent quantum well 4 of the first sort by a second grade barrier layer 6.
  • all quantum wells 4 of the first kind are egg
  • the thickness d6 of the second-type barrier layer 6 may preferably be between 3 nm and 15 nm, in particular between 2 nm and 6 nm.
  • the thicknesses d3 and d6 may be the same or different from each other.
  • a magnesium doping profile is provided, with the magnesium concentration increasing continuously, starting at the lower limit of the p-type region 1, until a maximum at a distance between 2 nm and 15 nm from the lower limit of the p-conducting area is reached.
  • the maximum concentration of magnesium is between 1.0 and 100 ⁇ 10 18 l / cm 3 . From this maximum, the magnesium concentration decreases again in the direction of the p-contact of the arrangement until it reaches a minimum concentration.
  • the minimum magnesium concentration is about one third to the one
  • the magnesium concentration In the direction of the p-contact, which can be embodied, for example, as a gallium nitride layer, the magnesium concentration continues to increase and is then preferably greater than 5.0 ⁇ 10 19 l / cm 3 .
  • the number of quantum wells of the first variety may vary, as indicated by the dashed line combination of first quantum wells 4 of the first variety with the bulk density. 3 of the first variety is indicated.
  • the number of quantum tot total elements in particular a light-emitting diode (LED).
  • FIG. 2 shows the emission spectrum of a light-emitting structure, as illustrated by way of example in FIG.
  • the quantum wells of the first kind radiate light whose intensity I is shown as a function of the wavelength ⁇ through the curve 104.
  • the curve 104 shows the light emission as a function of the wavelength for the quantum wells 4 of the first kind.
  • the quantum well of the second kind emits light whose intensity as a function of the wavelength is represented by the curve 105. This shows the emission of the quantum well of the second sort as a function of the wavelength. The total spectrum of the emitted light is shown by curve 100.
  • the radiation spectrum according to FIG. 2 results for example from the use of barrier layers of the first kind with an indium concentration of not more than 3%, quantum wells of the first kind with an indium concentration of about 8%, barrier layers of the second kind with an indium concentration of not more than 5% and a quantum well of the second variety with an indium concentration of up to 18%.
  • the barrier layers of the first kind include In x Gai_ x N, where x ⁇ 0.03, the quantum wells of the first kind
  • the light emitted from the second-type quantum well has a peak wavelength ⁇ 5 that is between 450 nm and 500 nm.
  • FIG. 3 shows a component in which a phosphor layer 8 is applied to a light-emitting structure 7, as shown, for example, in FIG.
  • the phosphor layer 8 contains a mixture of phosphors.
  • the phosphor layer 8 may contain blue-emitting phosphor in the form of nitride-silicate-based phosphor.
  • Green emitting phosphor can be present, for example, as a YAG-based phosphor.
  • the substance YAG: Ce (Y3 ⁇ I5O12 : Ce ⁇ + ) can be used as the phosphor.
  • the phosphor layer 8 can partially absorb the light emitted from the light-emitting structure 7 in the sense of a pumping process and even emit light of different wavelengths.
  • the radiated light of an arrangement shown in FIG. 3 is shown in FIG. 6, for example.
  • the light emitted by the phosphor layer 8 still exists whose intensity as a function of the wavelength is shown by the curve 108 in FIG. That from the phosphor layer 8 radiated light is superimposed with the entire give is. It can be seen that, in particular, the width of the peak emitted in the blue spectral range can be significantly widened by the use of the luminous substance layer 8, which makes the perception by the human eye more pleasant.
  • the radiation peak of the quantum well of the second variety is selected in the range between 500 nm and 550 ntn.
  • an emission of the phosphor layer 8 can also be achieved in this wavelength range.
  • the light emitted from the phosphor layer 8 is shown by the curve 108.
  • the use of the phosphor layer 8 results in a widening of the radiation peak in the region of the green light at the peak wavelength in the region of the peak wavelength ⁇ 5. As a result, the light impression is made more pleasant for the human eye.
  • FIG. 4 shows a component in which phosphor is likewise arranged on the upper side of a light-emitting structure 7.
  • two different types of phosphors are provided in layers arranged alternately one above the other.
  • phosphor layers 91 of a first kind alternate with luminous substance layers 92 of a second kind.
  • the phosphor layer 91 may preferably be a green emitting phosphor while for the phosphor layer 92 a yellow-red (orange) emitting phosphor is selected. E and 92 efficiency of the phosphor layer 91 is better for the wavelength ⁇ 4, while the phosphor layer 92 has a better excitation efficiency for the wavelengths ⁇ 5.
  • a radiation spectrum • development be achieved as shown in FIG. 5
  • the use of different phosphor materials also emits different wavelengths of light from the phosphor materials.
  • the phosphor layer 91 of the first type radiates light with a peak wavelength ⁇ 91.
  • the intensity as a function of the wavelength is indicated by the curve 191.
  • the phosphor layer 92 of the second kind emits light with a peak wavelength ⁇ 92 that is greater than the peak wavelength ⁇ 91.
  • the intensity of the light emitted by the second-type phosphor layer 92 is represented by the curve 192.
  • In the total spectrum 100 results in a very balanced intensity, ranging from the blue range between 500 nm to beyond the 600 nm.
  • the 4-wavelength emitter shown in FIG. 4 can produce a good color distribution and improve the color impression perceived by the human eye. This is made possible above all by better coverage in the green range of the color spectrum.
  • An advantage in the multilayer arrangement shown is that it becomes possible to perform the chip level conversion by using relatively thin layers.
  • the thickness of the layers can be increased overall by repeated deposition of thin layers, where is also improved by the efficiency of light conversion.
  • the final emission spectrum can be made by " adjusting the thickness of the phosphor layers 91 and the phosphor layers 92. ***"

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Structure électroluminescente (7) comprenant une zone dopée P (1) pour l'injection dans des trous, une zone dopée N (2) pour l'injection d'électrons, au moins un puits quantique InGaN (4) d'un premier type et au moins un puits quantique InGaN (5) d'un deuxième type, ces puits quantiques étant disposés entre la zone dopée N (2) et la zone dopée P (1). Le puits quantique InGaN (5) du deuxième type présente une teneur en indium supérieure à celle du puits quantique GaN (4) du premier type.
EP08830682.4A 2007-09-10 2008-08-25 Structure électroluminescente Active EP2186143B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007043096 2007-09-10
DE102007058723A DE102007058723A1 (de) 2007-09-10 2007-12-06 Lichtemittierende Struktur
PCT/DE2008/001426 WO2009033448A2 (fr) 2007-09-10 2008-08-25 Structure électroluminescente

Publications (2)

Publication Number Publication Date
EP2186143A2 true EP2186143A2 (fr) 2010-05-19
EP2186143B1 EP2186143B1 (fr) 2015-03-04

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EP08830682.4A Active EP2186143B1 (fr) 2007-09-10 2008-08-25 Structure électroluminescente

Country Status (8)

Country Link
US (1) US8390004B2 (fr)
EP (1) EP2186143B1 (fr)
JP (1) JP5815238B2 (fr)
KR (1) KR101460387B1 (fr)
CN (1) CN101803045B (fr)
DE (1) DE102007058723A1 (fr)
TW (1) TWI434431B (fr)
WO (1) WO2009033448A2 (fr)

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Also Published As

Publication number Publication date
TW200917539A (en) 2009-04-16
US20100207098A1 (en) 2010-08-19
KR20100053486A (ko) 2010-05-20
DE102007058723A1 (de) 2009-03-12
CN101803045A (zh) 2010-08-11
WO2009033448A9 (fr) 2010-02-25
JP5815238B2 (ja) 2015-11-17
EP2186143B1 (fr) 2015-03-04
US8390004B2 (en) 2013-03-05
WO2009033448A2 (fr) 2009-03-19
CN101803045B (zh) 2013-09-25
KR101460387B1 (ko) 2014-11-10
TWI434431B (zh) 2014-04-11
WO2009033448A3 (fr) 2009-07-09
JP2010539686A (ja) 2010-12-16

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