EP2181461A1 - Technique de construction et de raccord de modules au moyen d'un patron de decoupage metallique plie hors d'un plan ou de pieces decoupees et pliees hors d'un plan - Google Patents
Technique de construction et de raccord de modules au moyen d'un patron de decoupage metallique plie hors d'un plan ou de pieces decoupees et pliees hors d'un planInfo
- Publication number
- EP2181461A1 EP2181461A1 EP08786502A EP08786502A EP2181461A1 EP 2181461 A1 EP2181461 A1 EP 2181461A1 EP 08786502 A EP08786502 A EP 08786502A EP 08786502 A EP08786502 A EP 08786502A EP 2181461 A1 EP2181461 A1 EP 2181461A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- bent
- stamped
- plane
- module
- metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49537—Plurality of lead frames mounted in one device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Definitions
- the present invention relates to a module according to the preamble of the main claim and a method according to the preamble of the independent claim.
- the object is achieved by a module according to the main claim and a method according to the independent claim for producing such a module.
- a three-dimensionally shaped leadframe is an electrically conductive, in particular metallic, three-dimensionally shaped structure, for example in the form of a grid, which is produced for example by low-cost stamping, etching and / or bending, for example on a roll or in strips.
- Three-dimensional shaped means bent out of a plane.
- materials are preferably suitable Cu alloys, for example tin bronze CuSn ⁇ or SB02, that is, Cu98Fe2. Typical thicknesses are in the range of 0.2 to 0.5 mm.
- flat leadframes are also used.
- Leadframes and planar leadframes are leadframes.
- a three-dimensionally shaped leadframe is used as a stamped bent part or stamped grid.
- planar leadframes can be used in addition to the three-dimensionally shaped leadframes. In this way, electronic components can be easily contacted and / or attached.
- a three-dimensionally shaped leadframe is electrically contacted and / or fixed with connection surfaces on the upper side of the first component and on the underside of the second component.
- a planar leadframe is in each case electrically contacted and / or fastened to connection surfaces of the other sides of the respective component, that is to say of the first and the second component.
- At least one further three-dimensionally shaped leadframe is optionally electrically contacted and / or attached to further electrically contacted and / or fastened components in such a way that the components are generally surrounded on upper and lower side on three-dimensionally shaped leadframes.
- a three-dimensional stacking is particularly easy executable.
- a planar leadframe is in each case electrically contacted and / or fastened with connection surfaces of the components which are free of three-dimensionally shaped leadframes. In this way external contacts can be generated particularly easily.
- the leadframes used have different thicknesses and / or materials.
- bridges generated by three-dimensionally shaped leadframes are interrupted in order to avoid short circuits. Such bridges were required prior to contacting for mechanical stabilization of the three-dimensionally shaped leadframe.
- At least one three-dimensionally shaped leadframe is designed as a heat sink and / or positively connected via a contact surface with at least one heat sink. In this way, there are effective cooling options through heat sinks that can be generated on both sides of the module.
- free areas between the three-dimensionally shaped leadframes, if present planar leadframes and the components are filled with electrically insulating material.
- electrically insulating material In this material, cooling channels or heat pipes can be generated.
- the electrically insulating material is designed to be thermally conductive, eg by filling with aluminum oxide particles.
- electrical connections of the module are provided to the outside by leadframes free of insulating material.
- the expansion coefficient of the electrically insulating material is adapted to the material of the leadframes.
- the coefficient of expansion of the electrically insulating material is selected such that a stress is built up, which mechanically relieves a connection layer, in particular a solder layer, between the component and the leadframe in order to produce a high cycle stability. In this way results in a particularly high thermomechanical and electrical Zykestesttechnik.
- an electrical contacting and / or fastening takes place, in particular by means of soldering, reactive soldering to intermetallic phases, welding, in particular laser welding, conductive and / or non-conductive bonding.
- a generation of bumps on the side of the component and / or on the side of the leadframe prior to the electrical contacting of small pads, for example, gate contacts and / or control contacts, a generation of bumps on the side of the component and / or on the side of the leadframe.
- bumps are, for example, solder bumps, studbumps or conductor adhesive depots.
- solder bumps these can either be generated by the soldering process itself or already before, for example on the wafer, i. A so-called wafer level processing can be carried out. In this case, it is sufficient to bring flux to the contact point before the actual soldering process.
- noses or contact tongues in the leadframe are connected before the electrical contacting of small connection surfaces. generated punching and / or embossing. In this way, the contact of small pads is simplified.
- the three-dimensionally shaped leadframe is brought into its three-dimensional shape only after the electrical contacting and / or fastening of the component and / or the metal body and / or the spacer.
- bridges generated before contacting for the mechanical stabilization of the three-dimensional leadframe are separated, for example, by means of stamping, drilling or laser cutting.
- the separation is carried out in a simple manner.
- the electrically insulating material is, for example, an epoxide.
- the introduction of the epoxy or the insulating material in the free areas is particularly advantageous by means of injection molding and in particular by means of a transfer molding process. In this way, a cost-effective package, based on established single processes with particular suitability for power electronics, is generated. Only a few cost-effective process steps, such as roll-to-roll processes, are necessary.
- a multi-stage injection molding can be carried out, wherein after first partial encapsulation leadframes are for example cut free and / or drilled. It may follow an injection molding to fill the resulting separation points and / or holes.
- first partial encapsulation leadframes are for example cut free and / or drilled. It may follow an injection molding to fill the resulting separation points and / or holes.
- a high insulation resistance is also provided for humid or corrosive environments, for example salt mist.
- FIG. 1 shows a first embodiment of a module according to the invention
- FIG. 2 shows a second embodiment of a module according to the invention
- FIG. 3 shows a first exemplary embodiment of a method according to the invention for producing a module.
- FIG. 1 shows a first exemplary embodiment of a module 1 according to the invention.
- a three-dimensionally shaped lead frame 9 is here produced, for example, with the material CuSn ⁇ , this being formed by stamping and forming.
- a first electronic component 2a namely an IGBT (Insolated Gate Bipolar Transistor), and a diode were placed and electrically contacted by soldering and fixed or fixed.
- a second planar leadframe 11 is placed adjusted and connected to the contacts of the IGBT and the diode by the same or a further soldering process.
- the contacting of the small gatepads 25 is facilitated by an embossed contact tongue 29 of a further planar leadframe 11 and a solder strip 27 produced in advance on the IGBT.
- a bridge 17 has been separated by means of a laser. By Transfermolden the free spaces were filled with epoxy as an electrically insulating and / or thermally conductive material 19, wherein for later cooling cooling channels 21 were kept free.
- the module 1 has two electronic components 2, namely a first component 2a and a second component 2b. Both components 2 each have at least one contact surface 3 arranged on an upper side and / or lower side for electrical contacting and fastening, wherein the two components 2, 2a, 2b are respectively positioned between substrates 5 such that the contact surfaces 3 each with , the connecting surfaces 3 opposite, electrical conductors 7 and Befest Trentsflä- Chen are electrically contacted and fixed on the substrates 5.
- FIG. 1 shows, in particular, three substrates 5, namely a three-dimensionally shaped leadframe 9 with connecting surfaces 3 on the upper side of the first component 2a and on the underside of the second component 2b.
- FIG. 1 also shows a metal body 13 for an electrical function and / or for cooling on the three-dimensionally shaped leadframe 9 in heat-conducting fashion and electrically contacted.
- a metal body 13 may also be attached to a component 2 thermally conductive and / or electrically contacted.
- a metal body 13 may be formed, for example, as a copper block.
- the metal body 13 in FIG. 1 also serves as a spacer 15 which, in order to produce a high insulation resistance, spaces the three-dimensionally shaped leadframe 9 from edges of the component 2 a.
- the three-dimensionally shaped leadframe 9 is shaped accordingly to produce a high insulation strength. To avoid short circuits, the bridge generated by the three-dimensionally shaped leadframe 9 is interrupted.
- Reference numeral 18 denotes heat sinks.
- the three-dimensionally shaped leadframe 9 is positively connected via its contact surfaces with heat sinks 18 on both sides.
- the electrically insulating and thermally conductive material 19 is filled in free areas between the three-dimensionally shaped leadframe 9, the planar leadframes 11 and the components 2, wherein space for cooling channels 21 is created.
- Reference numeral 23 denotes solder layers which produce the electrical contact and attachment.
- FIG. 2 shows a second exemplary embodiment of a module 1 according to the invention. In this case, the construction is similar to that of FIG. 1, wherein instead of a three-dimensionally shaped leadframe 9, two three-dimensionally shaped leadframes 9 are used. The remaining leadframes are flat
- Leadframes 11 The same reference numerals are used according to Figure 1. According to FIG. 2, four electronic components 2 are used. On the left side of Figure 2, the electrical contacting of a small connection surface 25 by means of a solder bump 27 and a contact tongue 29 is also shown. According to FIG. 2, in contrast to FIG. 1, a second three-dimensionally shaped leadframe 9 is electrically contacted and fastened such that the four components 2 are surrounded by three-dimensionally shaped leadframes 9 except for two sides on their top and bottom sides. In each case, a planar leadframe 11 with which connection surfaces 3 of the components 2 that are free from the three-dimensionally shaped leadframes are electrically contacted and fastened.
- the second three-dimensionally shaped leadframe 9 is electrically contacted and fixed with further electronic components 2. All leadframes 9, 11 serve as substrates 5 and provide electrical conductors 7.
- FIG. 2 shows a metal body 13 for an electrical function, specifically for the electrical contacting of a planar leadframe 11 with a further planar leadframe 11 for making electrical contact with a small gate terminal surface 25 of an IGBT at the bottom right in FIG. 2.
- FIG. 2 also shows a Further metal body 13, namely a copper block, to increase the thickness of the upper three-dimensionally shaped lead frame 9, so that an electrical contact and attachment with respect to the total thickness of the module 1 can be produced.
- the electrically insulating material 19 is, for example, an injection-molded or transfer-moldable polymer filled with thermally conductive inorganic particles.
- Reference numeral 21 denotes the space for cooling channels.
- FIG. 3 shows an exemplary embodiment of a method for producing a module 1 according to the invention.
- An essential step Sl is the electrical contacting and / or fastening of the component 2 and / or the metal body 13 and / or the spacer 15, in particular with the at least one three-dimensionally shaped leadframe 9 or with the at least one planar leadframe 11, in particular by means of soldering, Reaction soldering to intermetallic phases, laser welding, conductive and / or non-conductive bonding.
- Metal body 13 may also be mounted on electronic components 2.
- a metal body 13 is heat conductively attached and / or electrically contacted for an electrical function and / or for cooling and / or for increasing the thickness of a three-dimensionally shaped leadframe 9, on this and / or on a component 2.
- An electrical function is, for example, that of an electrical resistance or a coil.
- a further step S3 is a separation of bridges 17 of the three-dimensionally shaped leadframe 9, which is necessary, for example, by means of punching, drilling or laser cutting, which were necessary prior to contacting the mechanical stability of the three-dimensionally shaped leadframe 9.
- a further essential step S3 is that the electrically insulating material 19 is, for example, an epoxy and / or injected by means of injection molding, in particular by means of a transfermold process, namely into free regions, between the three-dimensionally shaped leadframes 9, the planar leadframes 11 and the components 2 A space for cooling channels 21 can be created.
- the electrically insulating material 19 is, for example, an epoxy and / or injected by means of injection molding, in particular by means of a transfermold process, namely into free regions, between the three-dimensionally shaped leadframes 9, the planar leadframes 11 and the components 2 A space for cooling channels 21 can be created.
- the basis of the present invention is therefore the use of three-dimensionally shaped lead frames 9. These can also be referred to as metal stamped grid or stamped and bent parts.
- the components 2 are now positioned and fixed in position on these punched grids.
- the contacting can be done, for example, by soldering, as well as reactive soldering to intermetallic phases, laser welding and / or gluing, namely conductive and non-conductive.
- copper blocks 13, which are necessary for electrical function and / or cooling can also be done after placement of the components 2.
- a possibly also equipped second punched grid is placed so positioned that electronic components or chips are usually surrounded on the front and back of stamped grids.
- the second stamped grid can differ in thickness and material from the first stamped grid.
- connection pads 25 for example gate contacts and control contacts
- bumps on the chip side or lead frame side can be, for example, solder bumps 27, studbumps or conductive adhesive depots.
- solder bumps 27 these can either be generated by the soldering process itself or even before that, for example, on the wafer of the power semiconductors used. This is called wafer level processing. In this case, it is sufficient to bring flux to the contact point before the actual soldering process.
- solder bumps 27 can be punched or stamped in the lead frame 9 or 11.
- soldered spacers 15, which consist for example of copper, or correspondingly shaped lead frames 9 can be achieved that leadframe 9 and edges of the components 2 are sufficiently far away from each other, so that a high insulation resistance can be achieved.
- soldered spacers 15 which consist for example of copper, or correspondingly shaped lead frames 9 can be achieved that leadframe 9 and edges of the components 2 are sufficiently far away from each other, so that a high insulation resistance can be achieved.
- heat sinks can be placed on the leadframes 9, 11 or on the components 2 and fixed in a thermally conductive manner by soldering or gluing.
- the leadframe 9, 11 can also be configured as a heat sink and can be contacted over a contact area with min. least one heat sink 18 are positively connected. Finally, the free areas between the two lead frames 9 and components 2 are filled by insulating material 19 by an injection molding process. In this case, channels 21 can also be kept free, through which a cooling medium can dissipate heat.
- the electrical connection of the module 1 to the outside is effected by non-molded contacts of the leadframes 9, 11.
- the injection molding process is preferably a transfer molding process.
- the insulating mass 19 is, for example, a highly filled epoxy.
- the electrically insulating compound 19 may, for example, have an expansion coefficient adapted to the leadframe material.
- the expansion coefficient of the potting material 19 can be chosen such that a stress is built up, which mechanically relieves the connection layer - in particular the solder layer - between the electronic component 2 and the leadframe 9, 11 in such a way that a high cycle strength is provided.
- three or more leadframes 9 with components 2 can also be stacked on one another and partially contacted as described above. The final one
- injection molding process closes all free spaces between leadframes 9, 11 and components 2.
- the injection molding process can also be multi-stage, whereby, for example, leadframes 9, 11 can be cut or drilled freely after the first partial encapsulants.
- the subsequent injection molding process then fills the resulting separation points or holes.
- the electrically insulating and thermally conductive material 19 ensures insulation resistance as well in humid and / or corrosive environment, for example salt mist.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11002935A EP2341533A3 (fr) | 2007-08-23 | 2008-07-28 | Technique de construction et de raccord de modules au moyen d'un patron de decoupage metallique plie hors d'un plan ou de pieces decoupees et pliees hors d'un plan |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200710039916 DE102007039916A1 (de) | 2007-08-23 | 2007-08-23 | Aufbau- und Verbindungstechnik von Modulen mittels dreidimensional geformter Leadframes |
PCT/EP2008/059861 WO2009024432A1 (fr) | 2007-08-23 | 2008-07-28 | Technique de construction et de raccord de modules au moyen d'un patron de découpage métallique plié hors d'un plan ou de pièces découpées et pliées hors d'un plan |
Publications (1)
Publication Number | Publication Date |
---|---|
EP2181461A1 true EP2181461A1 (fr) | 2010-05-05 |
Family
ID=39884754
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP11002935A Withdrawn EP2341533A3 (fr) | 2007-08-23 | 2008-07-28 | Technique de construction et de raccord de modules au moyen d'un patron de decoupage metallique plie hors d'un plan ou de pieces decoupees et pliees hors d'un plan |
EP08786502A Withdrawn EP2181461A1 (fr) | 2007-08-23 | 2008-07-28 | Technique de construction et de raccord de modules au moyen d'un patron de decoupage metallique plie hors d'un plan ou de pieces decoupees et pliees hors d'un plan |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP11002935A Withdrawn EP2341533A3 (fr) | 2007-08-23 | 2008-07-28 | Technique de construction et de raccord de modules au moyen d'un patron de decoupage metallique plie hors d'un plan ou de pieces decoupees et pliees hors d'un plan |
Country Status (4)
Country | Link |
---|---|
EP (2) | EP2341533A3 (fr) |
CN (1) | CN101785104A (fr) |
DE (1) | DE102007039916A1 (fr) |
WO (1) | WO2009024432A1 (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5414644B2 (ja) | 2010-09-29 | 2014-02-12 | 三菱電機株式会社 | 半導体装置 |
US8686569B2 (en) | 2010-12-14 | 2014-04-01 | Infineon Technologies Ag | Die arrangement and method of forming a die arrangement |
DE102011089740B4 (de) * | 2011-12-23 | 2017-01-19 | Conti Temic Microelectronic Gmbh | Leistungsmodul |
US11189537B2 (en) | 2012-03-21 | 2021-11-30 | Infineon Technologies Ag | Circuit package, an electronic circuit package, and methods for encapsulating an electronic circuit |
US9362240B2 (en) | 2013-12-06 | 2016-06-07 | Infineon Technologies Austria Ag | Electronic device |
CN104289582B (zh) * | 2014-09-15 | 2017-02-08 | 广东良得光电科技有限公司 | 一种倒装式电子器件引脚成型装置 |
DE102016226262A1 (de) | 2016-12-28 | 2018-06-28 | Robert Bosch Gmbh | Elektronikmodul, Verfahren |
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WO2004053988A1 (fr) * | 2002-12-12 | 2004-06-24 | Robert Bosch Gmbh | Module convertisseur monophase |
US20050224945A1 (en) * | 2004-04-09 | 2005-10-13 | Kabushiki Kaisha Toshiba | Power semiconductor device package |
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JPS589349A (ja) * | 1981-07-10 | 1983-01-19 | Hitachi Ltd | Gtoスタツク |
JP3088193B2 (ja) | 1992-06-05 | 2000-09-18 | 三菱電機株式会社 | Loc構造を有する半導体装置の製造方法並びにこれに使用するリードフレーム |
JPH06196596A (ja) * | 1992-12-25 | 1994-07-15 | Sony Corp | 半導体装置 |
US5696405A (en) * | 1995-10-13 | 1997-12-09 | Lucent Technologies Inc. | Microelectronic package with device cooling |
TW450432U (en) * | 2000-06-15 | 2001-08-11 | Siliconix Taiwan Ltd | Connecting structure of power transistor |
US6734536B2 (en) * | 2001-01-12 | 2004-05-11 | Rohm Co., Ltd. | Surface-mounting semiconductor device and method of making the same |
JP4731021B2 (ja) | 2001-01-25 | 2011-07-20 | ローム株式会社 | 半導体装置の製造方法および半導体装置 |
US6429513B1 (en) * | 2001-05-25 | 2002-08-06 | Amkor Technology, Inc. | Active heat sink for cooling a semiconductor chip |
EP1430524A2 (fr) | 2001-09-28 | 2004-06-23 | Siemens Aktiengesellschaft | Procede d'etablissement de contact pour des surfaces de contact electriques situees sur un substrat et dispositif constitue d'un substrat pourvu de surfaces de contact electriques |
DE10258565B3 (de) * | 2002-12-14 | 2004-08-12 | Semikron Elektronik Gmbh | Schaltungsanordnung für Halbleiterbauelemente und Verfahren zur Herstellung |
DE10301091B4 (de) | 2003-01-14 | 2015-01-22 | Infineon Technologies Ag | Leistungs-Halbleiterbauelement und Verfahren zur Verbindung von einem gemeinsamen Substratträger zugeordneten Halbleitereinrichtungen |
US7071553B2 (en) * | 2003-02-26 | 2006-07-04 | Advanced Semiconductor Engineering, Inc. | Package structure compatible with cooling system |
US7245493B2 (en) * | 2003-08-06 | 2007-07-17 | Denso Corporation | Cooler for cooling electric part |
US7298034B2 (en) | 2004-06-28 | 2007-11-20 | Semiconductor Components Industries, L.L.C. | Multi-chip semiconductor connector assemblies |
JP4498170B2 (ja) * | 2005-03-02 | 2010-07-07 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
DE102005039478B4 (de) * | 2005-08-18 | 2007-05-24 | Infineon Technologies Ag | Leistungshalbleiterbauteil mit Halbleiterchipstapel und Verfahren zur Herstellung desselben |
JP4450230B2 (ja) | 2005-12-26 | 2010-04-14 | 株式会社デンソー | 半導体装置 |
US7271470B1 (en) * | 2006-05-31 | 2007-09-18 | Infineon Technologies Ag | Electronic component having at least two semiconductor power devices |
-
2007
- 2007-08-23 DE DE200710039916 patent/DE102007039916A1/de not_active Ceased
-
2008
- 2008-07-28 EP EP11002935A patent/EP2341533A3/fr not_active Withdrawn
- 2008-07-28 WO PCT/EP2008/059861 patent/WO2009024432A1/fr active Application Filing
- 2008-07-28 CN CN200880104041.8A patent/CN101785104A/zh active Pending
- 2008-07-28 EP EP08786502A patent/EP2181461A1/fr not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004053988A1 (fr) * | 2002-12-12 | 2004-06-24 | Robert Bosch Gmbh | Module convertisseur monophase |
US20050224945A1 (en) * | 2004-04-09 | 2005-10-13 | Kabushiki Kaisha Toshiba | Power semiconductor device package |
Non-Patent Citations (1)
Title |
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See also references of WO2009024432A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO2009024432A1 (fr) | 2009-02-26 |
EP2341533A2 (fr) | 2011-07-06 |
EP2341533A3 (fr) | 2013-01-16 |
CN101785104A (zh) | 2010-07-21 |
DE102007039916A1 (de) | 2009-02-26 |
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