EP2099580A1 - Soldering filler metal, assembly method for semiconductor device using same, and semiconductor device - Google Patents

Soldering filler metal, assembly method for semiconductor device using same, and semiconductor device

Info

Publication number
EP2099580A1
EP2099580A1 EP03797594A EP03797594A EP2099580A1 EP 2099580 A1 EP2099580 A1 EP 2099580A1 EP 03797594 A EP03797594 A EP 03797594A EP 03797594 A EP03797594 A EP 03797594A EP 2099580 A1 EP2099580 A1 EP 2099580A1
Authority
EP
European Patent Office
Prior art keywords
balance
filler metal
brazing filler
weight
good
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03797594A
Other languages
German (de)
English (en)
French (fr)
Inventor
Nobuki SUMITOMO METAL MINING METAL CO. LTD. MORI
Kei SUMITOMO METAL MINING METAL CO. LTD. MORIMOTO
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Publication of EP2099580A1 publication Critical patent/EP2099580A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0227—Rods, wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29311—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01052—Tellurium [Te]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Definitions

  • the present invention relates to a high-temperature brazing filler metal
  • Au-type brazing filler metals represented by Au/ 20 weight %
  • brazing filler metals are used so that the brazing filler metal used in a previous
  • step does not remelt at the time of step brazing (at 220 to 260°C) carried out in
  • the Au-type brazing filler metal has a problem of being
  • soldering material containing at least one kind of Fe and Ni in an amount of
  • semiconductor device is mounted by soldering on a printed board.
  • a multi-level metal layer such as Cr-Ni-Ag or Ti-Cu-Ag is
  • the second metallic coating is a coating containing tin or antimony
  • Patent Publication No. Tokukai 2001-196393 Especially, when the heat output of the semiconductor element is large,
  • an Sn-5 weight % Sb type solder is used in order to obtain high reliability.
  • metal layer comprising at least one kind of metal selected from the group
  • the melting point of the solder can be prevented, or generation of a hard
  • brazing filler metal comprise 5 to 20 weight % of Sb and 0.01 to 5 weight % of
  • At least one of the brazing filler metal in order to improve the thermal cyclicity of the brazing filler metal, at least one
  • member of Ag, Cu, Fe and Ni may be added in a total amount of from 0.01 to 5
  • semiconductor devices is provided in which semiconductor elements are
  • brazing filler metal is used as the brazing filler metal.
  • a semiconductor device According to a fourth aspect of the invention, a semiconductor device
  • brazing filler metal comprises 5 to 20 weight % of Sb and 0.01 to 5 weight %
  • Te is added for
  • concentration thereof is less than 0.01 weight %, a sufficient effect of refining the ⁇ ' phase cannot be obtained, and if the concentration thereof exceeds 5
  • phase temperature exceeds 320°C, and die bonding at 340°C becomes
  • the thermal cyclicity of the brazing filler metal is further improved.
  • P is added for further improving the wettability, so that voids are
  • brazing filler metal of the first aspect of the invention if at least one kind of Ag,
  • Cu, Fe and Ni is added in a total amount of from 0.01 to 5 weight % to the
  • brazing filler metal of the present invention have the same reliability as or
  • brazing filler metal made of a gold base alloy or a brazing filler
  • the wire was
  • the wire was slowly cooled in a nitrogen atmosphere. The slow
  • the size of the ⁇ ' phase was all not larger than 20 ⁇ m. This can be
  • the wire was
  • the wire was slowly cooled in a nitrogen atmosphere. The slow
  • the size of the ⁇ ' phase was all not larger than 20 ⁇ m, as in Examples 1
  • Example 21 balance 5 0.1 0.005 good
  • Example 22 balance 5 0.1 0.05 good
  • Example 23 balance 5 0.1 0.1 good
  • Example 25 balance 5 0.1 0.5 good
  • Example 27 balance 5 2.0 0.05 good
  • Example 31 balance 5 5.0 0.005 good
  • Example 32 balance 5 5.0 0.05 good
  • Example 33 balance 5 5.0 0.1 good
  • Example 34 balance 5 5.0 0.3 good
  • Example 42 balance 8 2.0 0.05 good
  • Example 51 balance 12 0.1 0.005 good
  • Example 52 balance 12 0.1 0.05 good
  • Example 53 balance 12 0.1 0.1 good
  • Example 54 balance 12 0.1 0.3 good
  • Example 55 balance 12 0.1 0.5 good
  • Example 58 balance 12 2.0 0.1 good
  • Example 59 balance 12 2.0 0.3 good
  • Example 62 balance 12 5.0 0.05 good
  • Example 66 balance 20 0.1 0.005 good
  • Example 68 balance 20 0.1 0.1 good
  • Example 71 balance 20 2.0 0.005 good
  • Example 72 balance 20 2.0 0.05 good
  • Example 73 balance 20 2.0 0.1 good
  • Example 74 balance 20 2.0 0.3 good
  • Example 75 balance 20 2.0 0.5 good
  • Example 78 balance 20 5.0 0.1 good
  • the wire was
  • the wire was slowly cooled in a nitrogen atmosphere. The slow
  • the size of the ⁇ ' phase was all not larger than 20 ⁇ m, as in Examples 1
  • the wire was
  • the wire was slowly cooled in a nitrogen atmosphere. The slow
  • the size of the ⁇ ' phase was all about 100 ⁇ m.
  • dummy chip was then molded by using an epoxy resin.
  • the molded articles were used to conduct temperature cycle tests at a temperature of from -50°C to
  • invention comprises 5 to 20 weight % of Sb and 0.01 to 5 weight % of Te, with
  • the thermal cyclicity of the brazing filler metal can be further improved.
  • the brazing filler metal of the second aspect of the invention comprises
  • At least one member of Ag, Cu, Fe and Ni is added in a total amount of from 0.01
  • the brazing filler metal can be further improved.
  • the semiconductor device becomes

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Die Bonding (AREA)
EP03797594A 2002-09-19 2003-09-12 Soldering filler metal, assembly method for semiconductor device using same, and semiconductor device Withdrawn EP2099580A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002273598A JP4147875B2 (ja) 2002-09-19 2002-09-19 ろう材、これを用いた半導体装置の組み立て方法並びに半導体装置
PCT/JP2003/011730 WO2004026527A1 (en) 2002-09-19 2003-09-12 Soldering filler metal, assembly method for semiconductor device using same, and semiconductor device

Publications (1)

Publication Number Publication Date
EP2099580A1 true EP2099580A1 (en) 2009-09-16

Family

ID=32024961

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03797594A Withdrawn EP2099580A1 (en) 2002-09-19 2003-09-12 Soldering filler metal, assembly method for semiconductor device using same, and semiconductor device

Country Status (7)

Country Link
EP (1) EP2099580A1 (zh)
JP (1) JP4147875B2 (zh)
KR (1) KR100595037B1 (zh)
CN (1) CN100404193C (zh)
AU (1) AU2003263597A1 (zh)
TW (1) TWI231238B (zh)
WO (1) WO2004026527A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101239425A (zh) * 2008-03-13 2008-08-13 浙江省冶金研究院有限公司 一种无铅高温电子钎料及制备方法
JP5490258B2 (ja) * 2010-12-10 2014-05-14 三菱電機株式会社 無鉛はんだ合金、半導体装置、および半導体装置の製造方法
JP5878290B2 (ja) * 2010-12-14 2016-03-08 株式会社日本スペリア社 鉛フリーはんだ合金
JP5635561B2 (ja) * 2012-06-21 2014-12-03 株式会社タムラ製作所 はんだ組成物
CN104885207B (zh) * 2012-12-25 2018-05-22 三菱综合材料株式会社 功率模块
CN106271181A (zh) * 2015-05-13 2017-01-04 广西民族大学 一种Sn-Sb-X系高温抗氧化无铅钎料
CN105750757A (zh) * 2016-03-22 2016-07-13 苏州虎伏新材料科技有限公司 一种用于堆焊以获得锡基巴氏合金耐磨层的焊接材料
JP6355091B1 (ja) * 2017-03-07 2018-07-11 パナソニックＩｐマネジメント株式会社 はんだ合金およびそれを用いた接合構造体
JP6355092B1 (ja) * 2017-05-11 2018-07-11 パナソニックＩｐマネジメント株式会社 はんだ合金およびそれを用いた接合構造体
JP6998557B2 (ja) 2017-09-29 2022-01-18 パナソニックＩｐマネジメント株式会社 はんだ合金およびそれを用いた接合構造体

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001191196A (ja) * 1999-10-29 2001-07-17 Topy Ind Ltd ぬれ性、熱サイクル特性及び耐酸化性に優れたＳｎ基Ｐｂフリー半田

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US2059019A (en) * 1936-02-20 1936-10-27 Cleveland Graphite Bronze Co Bearing alloy
GB2181009B (en) * 1985-09-23 1989-11-29 Fluke Mfg Co John Apparatus and method for providing improved resistive ratio stability of a resistive divider network
JPH0825051B2 (ja) * 1992-06-22 1996-03-13 株式会社日本スペリア社 はんだ合金
US5851482A (en) * 1996-03-22 1998-12-22 Korea Institute Of Machinery & Metals Tin-bismuth based lead-free solder for copper and copper alloys
US5837191A (en) * 1996-10-22 1998-11-17 Johnson Manufacturing Company Lead-free solder
US5833921A (en) * 1997-09-26 1998-11-10 Ford Motor Company Lead-free, low-temperature solder compositions
DE10145389C2 (de) * 2001-09-14 2003-07-24 Forschungsvereinigung Antriebs Gleitlagerlegierung auf Sn-Basis

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2001191196A (ja) * 1999-10-29 2001-07-17 Topy Ind Ltd ぬれ性、熱サイクル特性及び耐酸化性に優れたＳｎ基Ｐｂフリー半田

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2004026527A1 *

Also Published As

Publication number Publication date
JP4147875B2 (ja) 2008-09-10
CN1681620A (zh) 2005-10-12
AU2003263597A1 (en) 2004-04-08
KR20050057490A (ko) 2005-06-16
TW200406278A (en) 2004-05-01
WO2004026527A1 (en) 2004-04-01
TWI231238B (en) 2005-04-21
CN100404193C (zh) 2008-07-23
JP2004106027A (ja) 2004-04-08
KR100595037B1 (ko) 2006-06-30

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