TWI231238B - Brazing filler metal, assembly method for semiconductor device using same, and semiconductor device - Google Patents

Brazing filler metal, assembly method for semiconductor device using same, and semiconductor device Download PDF

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TWI231238B
TWI231238B TW092125309A TW92125309A TWI231238B TW I231238 B TWI231238 B TW I231238B TW 092125309 A TW092125309 A TW 092125309A TW 92125309 A TW92125309 A TW 92125309A TW I231238 B TWI231238 B TW I231238B
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filler metal
difference
good
weight
semiconductor device
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TW092125309A
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Chinese (zh)
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TW200406278A (en
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Nobuki Mori
Kei Morimoto
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Sumitomo Metal Mining Co
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0227—Rods, wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29311—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01052—Tellurium [Te]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Die Bonding (AREA)

Abstract

In conventional Sn/Sb type brazing filler metals, there are disadvantages that large grains in a j3' phase are likely to deposit and that cracks are likely to occur in the elements and the bonded portion, and that voids are formed when the above described special coating is provided on the die bonding plane of the semiconductor element. Hence, it cannot be said that the Sn/Sb type brazing filler metal is adequate. It is an object of the present invention to provide a novel brazing filler metal that can solve such problems. The brazing filler metal of the present invention comprises 5 to 20 weight % of Sb and 0.01 to 5 weight % of Te, with the balance being Sn and incidental impurities, or a brazing filler metal comprises 5 to 20 weight % of Sb, 0.01 to 5 weight % of Te, 0.001 to 0.5 weight % of P, with the balance being Sn and incidental impurities. In order to improve the thermal cyclicity of the brazing filler metal, at least one member of Ag, Cu, Fe and Ni may be added in a total amount of from 0.01 to 5 weight % to the brazing filler metal.

Description

1231238 [發明所屬之技術領域] 兀件進行晶粒黏合及組 詳言之，本發明係有關 本發明係有關用於對半導體 裝電子零件之高溫焊接填料金屬 不δ Pb之南溫焊接填料金屬者。 [先前技術] 牡對南頻元件或半 合以組裳半導體裝置或電子愛件時' 二木寺進行晶粒 v山电于令件知，係使用熔點約為3 广…。重量％Sn(20重陶 剩之Au型焊接填料金屬或由pb/5重量％ _重量心 餘部分為Pb)代表之Pb型焊接填料金屬。 :用：點約職之彼等焊接填料金屬進行晶粒黏 乂 4〇至26〇°C之溫度條件及1〇秒或小於. 私的加熱期間將組裝的半導 ' 時，為防止所用焊接埴料:屬二， 後果變差之故。此外:、於…：=:時再炫融而& 接填料金屬，俾使於後⑭ S”亦使用彼等力 *-階段使用的=:步://:焊接(22。至2，c)時， 、 ^按具科金屬不會再熔解。1231238 [Technical field to which the invention belongs] Element bonding and grouping of concrete components In detail, the present invention relates to the present invention, which relates to the South-temperature welding filler metal which is not used for semiconductor high-temperature welding filler metal and not δ Pb for semiconductor-mounted electronic parts. . [Prior art] When the MU component or the semi-conductor is combined with a semiconductor device or an electronic device, 'Nikiji's crystal grains are known, and the melting point is about 3…. Weight% Sn (20 weight ceramic left Au-type welding filler metal or Pb-type welding filler metal represented by pb / 5% by weight _ weight balance Pb). : Used: Point welding of their welding filler metals for grain bonding at a temperature of 40 to 26 ° C and 10 seconds or less. To prevent the use of welding when the semiconductor will be assembled during private heating Unexpected: It is the second reason, the consequences are worse. In addition :, at ...: =: when it is fascinated and & then connected to the filler metal, so that it is used in the back ⑭ S ”also uses their force * -stage ==: step: //: welding (22. to 2, c), ^ and ^ according to the metal will not melt.

型焊=料:屬?Μ/有價格昂貴的問題，B 含-、經濟、能们::r3=題；Γ"界對於不 °C或⑽。c以上m 進4接、其炫點為26〔 料金屬存在高度需求:有極㈣接性㈣咖吻之輝接填 為了反應此等需求，實際上有-種含有〇_〇。5至5.0 315040 ^31238 重量％的Fe與Ni之至少—Type welding = material: belongs to Μ / has expensive problems, B contains-, economic, energy: r3 = problem; Γ " circles for not ° C or ⑽. c above m into 4 connections, its dazzling point is 26 [material metal has a high demand: there is a very strong connection ㈣ coffee kiss the glow filling in order to reflect these needs, in fact, there is a species containing 〇_〇. 5 to 5.0 315040 ^ 31238 wt% of Fe and Ni at least—

Ag、或〇.05至9重量％Cu、或〇 j 2為〇·】至2〇重量％ 至5重量％Cu，及進一步含有〇 15重量°7,與〇·〇5 為“之焊接材料被提出(見曰· 15重量％Sb，其餘 144UI案）。 本專利公報特開2001- 此外，供晶粒黏合用的焊接材料 有Η·。至，·〇重咖^ 〇·0_至5.0重讀％之Cu盥货 ·2重里A P及較佳為 里里Λ之Cu與Nl之垄少一者，剩达 ^ ^ ：CE 0 ^ # ^ ^ 200^ Sn -^ ^ ^ ^ T ^ W SnySb Μ ^ ^ ^ ^ ^ ^ 义之缺點，及當半導體裝置利用焊接s + 時，減小W π j用谇接固疋於印刷電路板上 /置；南、^之晶粒黏合部分之抗性變化。 附▼地，於半導體元件與焊料的黏人面 「半導體元件之晶粒黏合平面提% 文稱為 pr χτ. λ 、 丁 ®」）上鍉供多層金屬層例如Ag, or 0.05 to 9% by weight Cu, or 〇2 is 〇 ·] to 20% to 5% by weight Cu, and further contains 0.15 wt. It has been proposed (see the case of 15% by weight Sb, the rest 144UI). In addition, the patent publication No. 2001- In addition, the welding materials used for die bonding are 晶粒. To, 〇 重 至 ^ 〇 · 0_ to 5.0 Re-reading of Cu toilet products · 2 double APs and preferably one of Cu and Nl ridges of Li Λ, less than ^: CE 0 ^ # ^ ^ 200 ^ Sn-^ ^ ^ T ^ W SnySb The shortcomings of Μ ^ ^ ^ ^ ^ ^ and when the semiconductor device uses soldering s +, W π j is reduced and fixed on the printed circuit board by 谇 bonding; resistance of the grain bonding portion of the south and ^ At the same time, on the bonding surface of semiconductor components and solder ("grain bonding plane of semiconductor components", referred to as pr χτ. Λ, D ®)), a multilayer metal layer is provided, such as

Nl-Ag或Ti-Cu-Ag，以增逸惶祖今p 4六L1 進^枓之熔接性。於使用sn/Sb 、斜作為晶粒黏合焊料時，該多金屬層最外層表面上的Nl-Ag or Ti-Cu-Ag is used to enhance the weldability of p4-6L1. When using Sn / Sb and oblique as the die bonding solder, the

Ag與焊料熔合，使該焊料的炫點大為降低（見日本專利公 ，特開2001-196393案第〇〇〇6段）。為了解決此問題，: 一種方法被提出，其中依序於半導體裝置之晶粒黏合平面 —成第金屬塗層與第一金屬塗層，該第二金屬塗層為 含錫或銻之塗層，並使用Sn/Sb型焊料作為焊料（見曰本專 利公報特開200卜1 963 93案第〇〇〇8段）。 尤其疋，^半‘體元件產生的熱較多時，可使用Sn-5 重里％ Sb型焊料以獲得高信賴度。然而，此時有一個問 315040 6 1231238 題’由於操作半導體裝置或施用壓力時之熱，多金屬層之 中間金屬層例如Ni與Cu與烊料反應形成硬又脆之金屬互 化物層’由此層開始產生破裂（見曰本專利案3〇33378第 〇〇〇5至〇006段）。為了解決此問題，有一種Sn/Sb型焊料 之用途被敘述，其中係藉形成Cr、Ti、Mo、W、Zr與Hf 之半&體元件晶粒黏合平面最外層，或於金屬層上提供選 自包括 Sn、Sb、An、Ag、Pt、Ni、Cu、Zn、A卜 、pe 與Pb的組群之至少一種金屬之表面金屬層（見日本專利案 3 0 3 3 3 7 8 第0010至0011段）。 根據上述二方法，可防止焊料炼點之過度下降，並可 防止產生硬叉跪的金屬互化物層。然而，頃發現在晶粒黏 口後衣丈干料層半導體元件側產生許多空隙的新問題。空隙 的存在使長期之信賴度變差。 迄今提供之Sn/Sb型焊接填料金屬，存在許多缺點： /5相之大顆粒可能沉積、元件與黏合部分可能發生裂缝、 此外於半導體元件之晶粒黏合平面提供上述特殊塗層時合 形成空隙，此等缺點均尚未被克服。因此，sn/sb型焊: 填料金屬稱不上適當。 、，鑑於上述情況，因此本發明之目的在於提供不含外 並且適用於半導體元件晶粒黏合或組裝電子零件之新 Sn/Sb型悍接填料金屬。 [發明内容] 為了解決上述問題’根據本發明之第-態樣係—種焊 接填料金屬，其包含5至20重量％ Sb及〇 〇ι至5重量％ 3)5040 1231238 T e，剩餘部分盎 馬Sn及附帶之雜皙 接填料金屬之熱 貝。此外，為了増進該輝 0·01至5重量％ { 51於烊接填料金屬中添加總量為Ag is fused with solder, so that the dazzling point of the solder is greatly reduced (see Japanese Patent Publication No. 2001-196393, paragraph 2006). In order to solve this problem, a method is proposed in which a first metal coating layer and a first metal coating layer are sequentially formed on a die bonding plane of a semiconductor device, and the second metal coating layer is a coating layer containing tin or antimony. And Sn / Sb type solder is used as the solder (see paragraph 008 of Japanese Patent Publication No. 200B 1 963 93). In particular, when a large amount of heat is generated by the body element, Sn-5 wt% Sb solder can be used to obtain high reliability. However, at this time, there was a question 315040 6 1231238 with the question 'Because of the heat when operating a semiconductor device or applying pressure, the intermediate metal layer of the polymetallic layer, such as Ni and Cu, reacts with the filler to form a hard and brittle intermetallic compound layer'. The layer began to crack (see paragraphs 2005 to 006 of this patent No. 3033378). In order to solve this problem, there is a description of the use of a Sn / Sb solder, which is formed by forming the outermost layer of the crystal bonding plane of Cr, Ti, Mo, W, Zr, and Hf and the body element, or on the metal layer Provide a surface metal layer of at least one metal selected from the group consisting of Sn, Sb, An, Ag, Pt, Ni, Cu, Zn, Ab, pe, and Pb (see Japanese Patent No. 3 0 3 3 3 7 8 0010 to 0011). According to the above-mentioned two methods, it is possible to prevent the excessive reduction of the solder melting point and prevent the occurrence of a hard intermetallic compound layer. However, a new problem was found that many voids were generated on the semiconductor layer side of the dry layer after the die attach. The existence of voids makes long-term reliability worse. The Sn / Sb type welding filler metals provided so far have many disadvantages: large particles of phase / 5 may be deposited, cracks may occur in the components and the bonded parts, and the gaps are formed when the above-mentioned special coating is provided on the crystal bonding plane of the semiconductor components. These disadvantages have not been overcome. Therefore, sn / sb type welding: filler metal is not suitable. In view of the foregoing, it is therefore an object of the present invention to provide a new Sn / Sb type brazed filler metal which is free from the outside and is suitable for bonding semiconductor component crystals or assembling electronic parts. [Summary of the Invention] In order to solve the above-mentioned problem, according to the first aspect of the present invention—a welding filler metal, which contains 5 to 20% by weight of Sb and 0 to 5% by weight 3) 5040 1231238 T e, the remaining portion is Horse Sn and the accompanying hot metal with mixed filler metal. In addition, in order to incorporate this glow, 0.01 to 5% by weight {51

Ag、Cu、Fe 與 根據本發明 μ _ μ “ /、 之至乂 一員。 之弟二悲樣係一種煌彡 5至20重量。/鳴、〇〇1至5㈣¥接填料金屬，其包含 量％卩，剩餘部八 里％丁6、及0.001至〇·5重 焊接填料金屬之、A附τ之_ f °此外，為了增進該 屬之熱循環性，可於悝始枯u 曰退 為〇·〇〗至5重旦。/ 、坏接填料金屬中添加總量 妒垆士 Ag'Cu、Fe與州之至少一昌 _方:據：發明之第三態樣广 裝方法，該方法役—▲ 裡牛蜍體裝置之組 晶粒黏合以裝丰2用焊接填料金屬對轉m進行 根據本二;填料金屬作為該焊接填料金屬。 第二態樣之烊接埴弟四恶樣係藉使用根據本發明第-或 [實施方式Λ接填料金屬組裝半導體裝置。 ^ 解决Α述問題，根據本發明之第_能4 種垾接填料全屬，“ 冬知月之弟恶樣為提供― 量％Te予屬其包含5至20重量。Mb及0.01至5舌 ，剩餘部分為Sn及附帶之雜質。添 5重 生之β，相以防止發生聲縫。曲 a 為了精 重量％的原因A :若，：卢二。㈣/?§X定於°·。1至5 精製〜充八：广辰度小於°·。1重量％’則無法得到 預期精〜二Ϊ :而若其濃度超過5重量％，則無法 衣/5相之進一步效果，只是增加成本。Ag, Cu, Fe and μ_μ "according to the present invention, /, to one of them. The younger brother is a kind of 5 to 20 weights. / Ming, 〇1 to 5 接 ¥ filler metal, its content % 卩, the remaining eight miles% D6, and 0.001 to 0.5 of the heavy welding filler metal, A with τ f ° In addition, in order to improve the thermal cycling of this genus, it can be withdrawn at the beginning of the year. · 〇〗 to 5 deniers. /, Add the total amount of jealousy Ag'Cu, Fe and the state of at least one of the bad filler metal _ Fang: According to the third aspect of the broad-based packaging method of the invention — ▲ The grains of the ox-toad body device are bonded in order to install Feng 2 with welding filler metal. The filler metal is used as the welding filler metal. The semiconductor device is assembled using the first or the second embodiment of the present invention. ^ To solve the problem described above, according to the fourth embodiment of the present invention, all four kinds of connection fillers belong to, "The brother of Winter Zhiyue provides- The amount of Te is 5 to 20 weight. Mb and 0.01 to 5 tongues, the rest is Sn and incidental impurities. Add β of 5 rebirth to prevent sound seams. Qu a for fine weight% reason A: if ,: Lu Er. ㈣ /? §X is set at ° ·. 1 to 5 refining ~ charge eight: the degree of broadness is less than ° ·. 1% by weight 'does not give the expected fineness to dipyridine: if its concentration exceeds 5% by weight, further effects of the / 5 phase cannot be obtained, but the cost is increased.

Sb遭度設定於5至20重量％的原因為：若其濃 重量％，液相溫度將低於24(rc，則該焊接填料:尸、 315040 1231238 無法承受晶粒黏合後之後續步驟所用之260°C加工溫度； 。右其濃度超過20重量％，液相溫度將超過320。(：，則34( C將不足以進行晶粒黏合。若於焊接填料金屬中添加總量 1〇.01至5重量％之Ag、Cu、F_妬之至少一員並使其 分散，則可進—步增進該焊接填料金屬之熱循環性。 根據本發明之第二態樣係提供_種焊接填料盆 2〇 4 *〇/VSb' 0-- ^%Te^〇,oi； 齡分為^謂㈣㈣。屬請添加 改善熔接性，俾使進行晶粒黏合時半導邮n 金屬之間不容㈣。若焊接填料 目丨I么、土 π u P /辰度小於0·001重量〇/0， 則無法侍到此效果；若添加的里 以低成本進行鑄p ’則難以 至於藉添加P可抑制空 測，當焊接填料金屬炫融時因’本案發明人推 融體表面形成氧化物薄膜，因_ - p反應’防止於熔 明第—態樣之焊接填料金屬中，=炫接性。至於在本發 量％之Ag、Cu、Fe與Νι之至少右—二加總量為〇.〇1至5重 一步增進該焊接填料全 乂貝亚使其分散，則可進 才至屬之熱循環性。 於使用本發明第一盎第二自 使用習知步驟與條件而不需二焊，金屬時，可 填料金屬製造之半導Μ壯 又。使用本發明之焊接 •^月且衣置，斑佶 / 造的習知焊接填料金屬或以铋:八 至糸合金為材料製 料金屬製造之半道俨壯 不0金為材料製造的焊接填 J丑衣置相較下， /、 -、有相同或更佳之信賴 3)5040 1231238 度0 么么藉由實例更詳細說明本發明。 f .免LL至實例2〇 ?常塵炫融爐，使用純度辑99 9%之“ :::广具有表i所示組成之〜合金鎳錠。然後將該等 鑄錠擠壓至直徑1毫米，以製備金屬絲型試樣。 為了評估所得合金之熔接性，於340亡之 中，將金屬絲壓於銅板上，㈣㈣ 行緩慢.冷卻係為了:評枯&相將變成_ _ 幸父嚴可仏件下之炼接性。 抛取於銅板上並缓缓冷卻的部分，將其研磨及 先’硯祭所升⑷，相…、。結果石，相 於2〇微米，可判定係添加丁6之效應。 勺未大 粒二了，估黏合信賴度，使用直徑為1毫米之試樣及晶 在銅沉積Au㈣晶粒黏合平面上製備之假晶片 ° 、7木上進仃晶粒黏合。接著使用環氧;^ γ tβ 晶片。此模製品於_5『c至15代之…=w該假 5〇〇個循環。# $ i — X進仃/皿度循環試驗 w備¥。然後打開樹脂觀察黏合部 冬s 合部分沒有裂縫則評為「f好」.若吝a田日日片或其黏 良」。結果示於表，為良好」’右產生裂縫則評為「不 將部分模製品固定於固定板上，檢杳 合部分是否右@ 口 的日日片或黏 丨…有任何異常現象以及焊 隙。結果，於所有試樣中均未觀察到任何41:有空 實無任何空隙存在。 I” ^現承，亚證 315040 10 1231238 表 1 2 3 4 5 6 7 〇〇 910Γ11213141516171819ί 、*I -·*1 I·»I - -·*mV ΐ- -·*tm^ > -- _v 伤伤#仞伤伤伤伤伤例:·,.*例例例例例例例例例u 實實實實實實實實實實實實實實實實實實實★The reason why the Sb exposure is set at 5 to 20% by weight is: if its concentration is concentrated by weight, the liquidus temperature will be lower than 24 (rc, then the welding filler: corpse, 315040 1231238 cannot support the subsequent steps after the crystals are bonded. 260 ° C processing temperature;… its concentration exceeds 20% by weight, and the liquidus temperature will exceed 320. (:, then 34 (C will not be sufficient for grain bonding. If a total amount of 10.01 is added to the welding filler metal To at least one of Ag, Cu, and F_5% by weight and disperse it, the thermal cycleability of the welding filler metal can be further improved. According to the second aspect of the present invention, _ kinds of welding filler basins are provided 2〇4 * 〇 / VSb '0-- ^% Te ^ 〇, oi; The age is ^ means ㈣㈣. Please add to improve the weldability, so that there is no tolerance between the semiconductors and the metal when the grains are bonded. If the filler material is I, and the soil π u P / degree is less than 0 · 001 weight 0/0, this effect cannot be served; if it is added at a low cost for casting p ', it is difficult to suppress the addition of P. Empty measurement, when the welding filler metal is dazzled due to 'the inventor of the present case pushed the surface of the melt to form an oxide film, due to the _-p reaction Prevent from melting in the filler metal of the first aspect, = brilliant. As for the total amount of Ag, Cu, Fe and Ni, at least the right-two plus total amount is 0.01 to 5 steps. The dispersing of the welding filler can be improved, and the thermal cycleability can be reached. When using the conventional steps and conditions of the first and second self-use of the present invention without second welding, the filler can be filled. Semi-conductor made of metal is strong and strong. Using the welding method of the present invention, the conventional welding filler metal or made of bismuth: made from bismuth: eight to thorium alloy as a material. Compared with the welding fillers made of materials other than gold, /,-, have the same or better trust 3) 5040 1231238 degrees 0 Mody The invention will be explained in more detail by examples. F. LL to examples 20? Chang Chen Xuan melting furnace, using a purity of 99 9% ":: wide alloy nickel ingots with the composition shown in Table i. Then these ingots were extruded to a diameter of 1 mm to prepare metal wires In order to evaluate the weldability of the obtained alloy, a metal wire was pressed on a copper plate during .Cooling is for the evaluation of the dryness & phase will become _ _ Xingfu's Yan Ke's smeltability. Throw the part on the copper plate and slowly cool it, grind it and raise it first. Phase ..., the result stone, relative to 20 microns, can be judged to be the effect of the addition of Ding 6. The spoon is not large, the adhesion reliability is estimated, using a sample with a diameter of 1 mm and crystals deposited on the copper deposited Au㈣ grains Fake wafers prepared on the plane °, and 7 grains were bonded on the wood. Then epoxy; ^ γ tβ wafers were used. This molded product was replaced by _5 [c to 15 ...… = fake 500 cycles. # $ i — X enters the test cycle. Prepare ¥. Then open the resin to observe the adhesive part. The joint in the winter s joint is not cracked, and it is rated as "f good." The results are shown in the table. For the good ”, the cracks on the right are evaluated as“ do not fix some molded products on the fixed plate, and check whether the joint is right or left with the Japanese-Japanese film or sticky. As a result, no 41 was observed in all the samples: there is no void and no void exists. I "^ Here is now, Asian Certificate 315040 10 1231238 Table 1 2 3 4 5 6 7 〇910910Γ11213141516171819ί, * I-· * 1 I · »I--· * mV ΐ--· * tm ^ >-_v 伤 伤 # 仞 伤 伤 伤 伤 伤 例: ·,. * Examples Examples Examples Examples Examples u Really Really Really Really Really Really Really Really ★

Sn 組成（重量％) Sb Te 黏合信賴度 補足差額 5 0.05 良好 補足差額 5 0.1 良好 補足差額 5 0.5 良好 補足差額 5 2.0 良好 補足差額 5 5·0 良好 補足差額 8 0.05 良好 補足差额 8 0.1 良好 補足差額 8 0.5 良好 補足差· 8 2, G 〜良好 補足差額 8 5.0 良好 補足差瀨 12 0.0 5 '良好 補足差額 12 0.1 良好 補足差額 12 0.5 良好 補足差額 12 2.0 良好 補足差額 12 5.0 良好 補足差額 20 0.05 良好 補足差額 20 0.1 良好 補足差額 20 0.5 良好 補足差額 20 2.0 5.0 良好 補足差額 20 良好 從表1看出，根據本發明之Sn合金在黏合信賴度上 沒有問題。 實例21至實例80 利用常壓熔融爐，使用純度分別為99.9%之Sn、Sb、 Te與P等原料製得具有表2至5所示組成之Sn合金鑄錠。 然後將該等鑄錠擠壓至直徑1毫米，以製備金屬絲型試 樣。 為了評估所得合金之熔接性，於3 4 0 °C之氮氣氣流 315040 1231238 :丄：金屬絲壓於銅板上’炫融後，於氮氛圍中緩緩冷卻 ::二蜀絲。進行緩慢冷卻係為了評估々，相將變成較粗糙之 較嚴可條件下之熔接性。 取出一段壓於銅板上並緩緩冷卻的部分，將其研磨及 拋光，觀祭所形成々，相的大小。結果與實例工至Μ 一樣， ^相的大小均未大於20微米，可判定係添加Te之效應。 /為了評估黏合倌賴度，使用直徑為丨毫米之試樣及晶 释舞合劑5以沉積軌u於矽晶粒黏合 奉銅導I架上迤#务粒黏合。靜 曰曰片此模衣品於· 5 〇 C至1 5 〇 °C之溫度進行溫度循環試驗 500個彳盾環。然後打開樹脂觀察黏合部分。當晶片或其黏 V。卩刀’又有裂縫則許為「良好」;若產生裂缝則評為「不 良」。結果示於表2至5。 將部分模製品固定於固定板上，檢查固定的晶片或黏 合部分是否有任何異常現象以及焊接填料金屬中是否有空 隙。結果，於所有試樣中均未觀察到任何異常現象，並證 實無任何空隙存在。 1 5040 1231238 2 表 —UJ JnJ tuj —UJ tuj JJ. —UJ- —MJ- tuj, JJ,. tuj —WMJ· IU4 tuj JUJ 合合合伤合合令栘令隹合奋栘存僉 3 實實實實實實實實實實實實實實實 € % 3 組成（重量％) Sn Sb Te 補 足 差 額 5 0 1 補 足 差 額 5 0 1 補 足 差 額 5 0 1 補 足 差 額 5 0 1 補 足 差 額 5 0 1 補 足 差 額 5 2 0 補 足 差 額 5 2 0 補 足 差 額 5 2 0 補 足 差 額 5 2 0 補 足 差 額 5 2 0 捕 差額 5 5 0 補 足 差 額 5 5 0 補 足 差 額 5 5 0 補 足 差 額 5 5 0 補 足 差 額 5 5 0Composition of Sn (% by weight) Sb Te Adhesion trust make-up difference 5 0.05 Good make-up difference 5 0.1 Good make-up difference 5 0.5 Good make-up difference 5 2.0 Good make-up difference 5 5 · 0 Good make-up difference 8 0.05 Good make-up difference 8 0.1 Good make-up difference 8 0.5 Good make-up difference 8 2, G ~ Good make-up difference 8 5.0 Good make-up difference 12 0.0 5 'Good make-up difference 12 0.1 Good make-up difference 12 0.5 Good make-up difference 12 2.0 Good make-up difference 12 5.0 Good make-up difference 20 0.05 Good Top-up difference 20 0.1 Good top-up difference 20 0.5 Good top-up difference 20 2.0 5.0 Good top-up difference 20 Good It can be seen from Table 1 that the Sn alloy according to the present invention has no problem in bonding reliability. Examples 21 to 80 An Sn alloy ingot having a composition shown in Tables 2 to 5 was prepared using a normal-pressure melting furnace using raw materials such as Sn, Sb, Te, and P each having a purity of 99.9%. These ingots were then extruded to a diameter of 1 mm to prepare wire-type samples. In order to evaluate the weldability of the obtained alloy, a nitrogen gas flow at 3 40 ° C 315040 1231238: 丄: After the metal wire is pressed on the copper plate ', it is slowly cooled in a nitrogen atmosphere :: Ershu wire. The slow cooling was performed to evaluate the radon, and the phase would become rougher under more severe weldability. Take out a section that is pressed on the copper plate and slowly cooled down, grind and polish it, and observe the size of the sacrifice and phase formed. The results are the same as those in Examples G to M. The size of the ^ phase is not more than 20 microns, which can be judged as the effect of adding Te. / In order to evaluate the adhesion degree, a sample with a diameter of 1 mm and a crystal mixture 5 were used to deposit the silicon substrate on the silicon grains. Static Moulding This mold-coating product was subjected to a temperature cycle test at a temperature of · 50 ° C to 150 ° C. Then open the resin and observe the adhesive part. When the chip or its stick V. "Blades" may be considered "good" if there are cracks, and "bad" if cracks are generated. The results are shown in Tables 2 to 5. Fix a part of the molded product to the fixing plate, and check whether there is any abnormality in the fixed wafer or the bonding part and whether there is a gap in the solder filler metal. As a result, no abnormality was observed in all the samples, and it was confirmed that there were no voids. 1 5040 1231238 2 Table—UJ JnJ tuj —UJ tuj JJ. —UJ- —MJ- tuj, JJ ,. tuj —WMJ · IU4 tuj JUJ Concord, Injury, Concord, Order, Conspiracy, and Accreditation 3 Reality Make up the difference €% 3 Composition (% by weight) Sn Sb Te Make up the difference 5 0 1 Make up the difference 5 0 1 Make up the difference 5 0 1 Make up the difference 5 0 1 Make up the difference 5 0 1 Make up Difference 5 2 0 Make up the difference 5 2 0 Make up the difference 5 2 0 Make up the difference 5 2 0 Make up the difference 5 2 0 Capture the difference 5 5 0 Make up the difference 5 5 0 Make up the difference 5 5 0 Make up the difference 5 5 0 Make up the difference 5 5 0

黏合信賴度 良好 良好 良好 良好 良好 良好 良好 良好 良好 良好 良好 良好 良好 良好 良好 tnj JUJ ΊΊ 1UJ, —UJ JnJ —UJ ΊΊ JUJW JNJ 1HJ. JMJ iwMJ !u 1WMJ 介令合存♦存♦分众存作分令你令 實實實實實實實實實實實實實實實 3 4 4 4 4 4 4 組成（重 量％) S η Sb Te 補 足 差 額 8 0· 1 補 足 差 額 8 0. 1 補 足 差 額 8 0. 1 補 足 差 額 8 0· 1 補 足 差 額 8 0· 1 補 足 差 額 8 2. 0 補 足 差 額 8 2. 0 補 足 差 額 8 2. 0 補 足 差 額 8 2. 0 補 足 差 額 8 2. 0 補 足 差 額 8 5. 0 補 足 差 額 8 5. 0 補 足 差 額 8 5. 0 補 足 差 額 8 5. 0 補 足 差 額 8 5. 0 p 0.005 0.050.1 0.3 0.5 0.005 0.050.1 0.3 0.5 0.005 0.050.1 0.3 0.5 黏合信賴度 良好 良好 良好 良好 良好 良好 良好 良好 良好 良好 良好 良好 良好 良好 良好 13 315040 1231238 4 表 組成（重置％) 黏合信賴度 3 6 5 89012345 55666666 —UJ JnJ tuj. tuj fuj —uw JUJ ίΝΊΨ ΊΠΊ »WJ tuj. —UJ tnu, fuj 實實實實實實實實實實實實實實實 Sn Sb Te P 補 足 差 額 12 0 • 1 0 005 良好 補 足 差 額 12 0 • 1 0 05 良好 補 足 差 額 12 0 .1 0 1 良好 補 足 差 額 12 0 • 1 0 η 良好 補 足 差 額 12 0 • 1 0 5 良好 補 足 差 額 12 2 • 0 0 005 良好 補 足 差 額 12 2 • 0 0 05 良好 補 足 差 額 12 2 ,0 0 1 良好 補 足 差 額 12 2 • 0 0 3 良好 補 足 差 額 12 2 • 0 0 5 良好 補 足 差 額 12 5 • 0 0 005 良好 補 足 差 額 12 5 • 0 0 0 5 良好 補 足 差 額 12 5 .0 0 1 良好 補 足 差 額 12 5 • 0 0 3 良好 補 足 差 額 12 5 • 0 0 5 良好 表 5Good adhesion good good good good good good good good good good good good good good good tnj JUJ ΊΊ 1UJ, —UJ JnJ —UJ ΊΊ JUJW JNJ 1HJ. JMJ iwMJ! U 1WMJ Intermediate co-existence You make it 3 3 4 4 4 4 4 4 Composition (% by weight) S η Sb Te Make up the difference 8 0 · 1 Make up the difference 8 0. 1 Make up the difference 8 0. 1 Make up the difference 8 0 · 1 Make up the difference 8 0 · 1 Make up the difference 8 2. 0 Make up the difference 8 2. 0 Make up the difference 8 2. 0 Make up the difference 8 2. 0 Make up the difference 8 2. 0 Make up the difference 8 5. 0 Make up Difference 8 5. 0 Make up the difference 8 5. 0 Make up the difference 8 5. 0 Make up the difference 8 5. 0 p 0.005 0.050.1 0.3 0.5 0.005 0.050.1 0.3 0.5 0.005 0.050.1 0.3 0.5 Good adhesion good good good good good Good Good Good Good Good Good Good Good Good Good 13 315040 1231238 4 Table composition (% reset) Adhesion reliability 3 6 5 89012345 55666666 —UJ JnJ tuj. Tuj fuj — uw JUJ ίΝΊΨ ΊΠΊ »WJ tuj. —UJ tnu, fuj Sn Sb Te P Make up the difference 12 0 • 1 0 005 Good make up the difference 12 0 • 1 0 05 Good Top-up balance 12 0 .1 0 1 Top-up balance 12 0 • 1 0 η Top-up balance 12 0 • 1 0 5 Top-up balance 12 2 • 0 0 005 Top-up balance 12 2 • 0 0 05 Top-up balance 12 2, 0 0 1 Good make up difference 12 2 • 0 0 3 Good make up difference 12 2 • 0 0 5 Good make up difference 12 5 • 0 0 005 Good make up difference 12 5 • 0 0 0 5 Good make up difference 12 5 .0 0 1 Good Make up the difference 12 5 • 0 0 3 Good make up the difference 12 5 • 0 0 5 Good table 5

JnJ. iuuj, luj tuj JnJ tjnj —UJ fuj ΊΊ 1UJ tuj ΊΊ —UJ JJ !UJ 存分夺伤夺伯♦夺夯♦♦夯夺夺 ♦ {貫{貫{貫{貫{貫{τ{π{貫{貫{貫{貫{貫{貫{τ{π 6 7 8 9 6 6 6 6 2 組成（重 量％) 黏合信賴度 S η Sb Te P 補 足 差 額 20 0· 1 0.005 良 好 補 足 差 額 20 0· 1 0.05 良 好 補 足 差 額 20 0· 1 0.1 良 好 補 足 差 額 20 0· 1 0.3 良 好 補 足 差 額 20 0· 1 0.5 良 好 補 足 差 額 20 2· 0 0.005 良 好 補 足 差 額 20 2. 0 0.05 良 好 補 足 差 額 20 2. 0 0.1 良 好 補 足 差 額 20 2. 0 0.3 良 好 補 足 差 額 20 2. 0 0.5 良 好 補 足 差 額 20 5. 0 0,005 良 好 補 足 差 額 20 5. 0 0.05 良 好 補 足 差 額 20 5. 0 0.1 良 好 補 足 差 額 20 5. 0 0.3 良 好 補 足 差 額 20 5. 0 0.5 良 好 315040 1231238JnJ. Iuuj, luj tuj JnJ tjnj —UJ fuj ΊΊ 1UJ tuj ΊΊ —UJ JJ! UJ Separation of points and injuries ♦ ♦ Consolidation ♦ ♦ Consolidation ♦ {{{贯 {贯 {贯 {贯 {{{π {π { {{{{贯 {贯 {{{{{τ {π 6 7 8 9 6 6 6 6 2 Composition (wt.%) Adhesion reliability S η Sb Te P Make up the difference 20 0 · 1 0.005 Good make up the difference 20 0 · 1 0.05 Good top-up difference 20 0 · 1 0.1 Good top-up difference 20 0 · 1 0.3 Good top-up difference 20 0 · 1 0.5 Good top-up difference 20 2 · 0 0.005 Good top-up difference 20 2. 0 0.05 Good top-up difference 20 2. 0 0.1 Good make-up difference 20 2. 0 0.3 Good make-up difference 20 2. 0 0.5 Good make-up difference 20 5. 0 0,005 Good make-up difference 20 5. 0 0.05 Good make-up difference 20 5. 0 0.1 Good make-up difference 20 5. 0 0.3 Good make-up Difference 20 5. 0 0.5 Good 315 040 1231 238

Sn合金在黏合信賴 攸表2至5看出，根據本發明之 度上沒有問題。 f 例 1〇〇 利用常壓熔融爐，使用純度分別A 99 9%之 h、P、Ag、CunNiumMn、Sb、 之以合金鑄鍵。然後將該等鑄鍵播 ：示組成 製備金屬絲型試樣。 直彳二1毫米，以 為了評估所得合金之熔接性，於34〇。匕之 $ 中’將金屬絲壓於銅板上，溶融後，於氮㈣中緩= 該金屬絲。進行緩慢冷卻料了評估心 較嚴苛條件下之熔接性。 战奴粗糙 取出-段壓於銅板上並缓缓冷卻的部分 ::光，觀察所形成"目的大小。結果，與實例Γ:2:: ^。石才目的大小均未大☆ 20㈣’可判定係添加Te之3 為了評估黏合信賴声由 賴度使用直控為1毫米之試樣及E 粒黏合劑，以依戽、々4生XT. k及日 ^ 序/儿和N1及Sb於矽晶粒黏合平面上製, 之假晶片在銅導線牟、隹s 桓制兮π B u ，、、订日日粒‘合。接著使用環氧樹用 姨衣该作又晶片。此模,σ大人 w 衣扣於-5〇(：至15(TC之溫度進行溫戶 痛環試驗5 0 0個Μ環。1丄 又。二:〉後打開樹脂觀察黏合部分。♦曰 片或其黏合部分沒有剽έ.条 田曰日 Α「 有衣縫則汗為「良好」；若產生裂縫則評 為「不良」。結果示於表6。 將部分模製品 合部分是否有任何 固定於固定板上， 異常現象以及焊接 知查固定的晶片或黏 填料金屬中是否有空 315040 1231238 隙。結果，於所有試樣中均未觀察到任何異常現象，並證 實無任何空隙存在。 表6 8 0.5 0.0 8 0.5 0.0 8 0.5 0.0 8 0.5 0.0 12 0.5 0.0 12 0.5 0:0 12 0.5 0.0 12 0.5 0.0 12 0.5 0.0 8 0.5 0.1 8 0.5 0.1 8 0.5 0.1 8 0.5 0.1 8 0.5 0.1 12 0.5 0.1 12 0.5 0.1 12 0.5 0.1 12 0.5 0.1 12 0.5 0.1It can be seen from the Table 2 to 5 that the Sn alloy has no problem in terms of adhesion according to the present invention. f Example 100: Using a normal pressure melting furnace, h, P, Ag, CunNiumMn, Sb, with a purity of 99.99% were used to cast alloy bonds. These cast keys were then broadcasted to show the composition, and a wire-type sample was prepared. Straight to 2 mm in order to evaluate the weldability of the obtained alloy, at 34. In the middle of the knife, the metal wire is pressed on the copper plate, and after melting, it is slowly relaxed in the nitrogen gas. The slow cooling was performed to evaluate the weldability under more severe conditions. War slave rough Take out-the section pressed on the copper plate and slowly cooled :: light, observe the formation of "target size". Results, with examples Γ: 2 :: ^. The size of Shi Cai's purpose is not large ☆ 20㈣ 'can be judged to be the addition of Te 3 In order to evaluate the adhesion trust sound, the degree of reliance is determined by using a sample controlled by 1 mm and an E-granulate adhesive. The date and time sequence and N1 and Sb are made on the silicon die bonding plane, and the fake chip is made on copper wires, 隹 s, and π B u, and the date and time are combined. Then use epoxy resin to make wafers. In this mold, the adult σ w button is performed at a temperature of -50 (: to 15 (TC) to perform a warm household pain ring test of 500 M rings. 1 丄 again. 2 :: After opening the resin to observe the adhesive part. Or its adhesive part is not scratched. "Tatada said," If there is a garment, the sweat is "good"; if cracks occur, it is rated as "bad". The results are shown in Table 6. Are there any fixed parts of the molded parts? On the fixed plate, check whether there are any 315040 1231238 gaps in the fixed wafer or sticky filler metal for abnormal phenomena and soldering. As a result, no abnormalities were observed in all the samples, and it was confirmed that there were no voids. Table 6 8 0.5 0.0 8 0.5 0.0 8 0.5 0.0 8 0.5 0.0 12 0.5 0.0 12 0.5 0: 0 12 0.5 0.0 12 0.5 0.0 12 0.5 0.0 8 0.5 0.1 8 0.5 0.1 8 0.5 0.1 8 0.5 0.1 8 0.5 0.1 12 0.5 0.1 12 0.5 0.1 12 0.5 0.1 12 0.5 0.1 12 0.5 0.1

Sn 實例81 補足差額 實例82 補足差額 實例83 補足差額 實例84 補足差額 實例85 補足差額 實例86 補足差額 實例87 補足差額 實例88 補足差額 實例88 補足差額 實例90 補足差額 實例91 補足差額 實例92 補足差額 實例93 補足差額 實例94 補足差額 實例95 補足差額 實例96 補足差額 實例97 補足差額 實例98 補足差額 實例99 補足差額 實例100補足差額 組成（重量％) Sb Te P Ag Cu Fe 8 0.5 0.0 0.5 - 一 - 0.5 - - 一 0.5 0.5 0.5 0.5 0.5 - - 0.5 - - — 0:5 0.5 0.5 0.5 0 · 5 — — 一 0.5 — 一 一 0.5 0.5 0.5 0.5 0.5 — 一 一 0.5 一 一 一 0.5 0.5 0.5 0.5 黏合信賴度 Ni 一 良好 一 良好 一 良好 0-5 良好 0.5 良好 — 良好 — 良好 一 良好 0.5 良好 0.5 良好 — 良好 一 良好 — 良好 〇 · 5 良好 0.5 良好 一 良好 — 良好 — 良好 0.5 良好 0.5 良好 從表6看出，根據本發明之Sn合金在黏合信賴度上 沒有問題。 比較例1至20 利用常壓熔融爐，使用純度分別為99.9%之Sn、Sb、 Te與P等原料製得具有表7與8所示組成之Sn合金鑄錠。 然後將該等鑄錠擠壓至直徑1毫米，以製備金屬絲型試 樣。 為了評估所得合金之熔接性，於3 40 °C之氮氣氣流 16 315040 1231238 將孟屬4堡於銅板上，炼融後’於氮氛圍 該金屬絲。進行緩慢冷卻 心、，友冷句 較嚴苛條件下之炼接性。 父粗越之 取出-段屡於銅板上並緩緩冷卻的部分，將 抛光，觀察所形以，相的大小。結 =磨及 為大約100微米。 有点相的大小均 為了矛估‘合信賴度，使用直徑、^ ^ 在銅導、_上進行晶㈣纟合。詩# =上衣備之假晶片 晶片。此模f。於5价5 %氧樹脂模製該假 谓個_ 5α°σ之溫度進行溫度循環試驗 合部分樹脂觀察黏合部分。當晶片或其黏 :有裂縫則評為「良好」；若產生 J結果示於表7與8。 々个 表7 1MJ tuj tuj tuj tuj IUJ 1UJ JUJ JUJ rnj 侈移侈侈侈侈侈作侈作 較較較較較較較较較較 -E-f Jly"1Jfll JUI·7IE—·· J1UJ JB·7 bbbbbb 匕 bbb tkttttttfctSn Instance 81 Top Up Difference Instance 82 Top Up Difference Instance 83 Top Up Difference Instance 84 Top Up Difference Instance 85 Top Up Difference Instance 86 Top Up Difference Instance 87 Top Up Difference Instance 88 Top Up Difference Instance 88 Top Up Difference Instance 90 Top Up Difference Instance 91 Top Up Difference Instance 92 Top Up Difference Instance 92 93 Examples of Top-up Differences 94 Examples of Top-up Differences 95 Examples of Top-Up Differences 96 Examples of Top-Up Differences 97 Examples of Top-Up Differences 98 Examples of Top-Up Differences 99 Examples of Top-Up Differences 100 Composition of Top-up Differences (wt%) Sb Te P Ag Cu Fe 8 0.5 0.0 0.5-One-0.5 --One 0.5 0.5 0.5 0.5 0.5--0.5--— 0: 5 0.5 0.5 0.5 0 · 5 — — One 0.5 — One one 0.5 0.5 0.5 0.5 0.5 — One one 0.5 One one one 0.5 0.5 0.5 0.5 Adhesion reliability Ni A good one good one good 0-5 good 0.5 good-good-good-good 0.5 good 0.5 good-good one good-good 0.5 5 good 0.5 good one good-good 0.5 good 0.5 good As seen from Table 6, The Sn alloy according to the present invention has no problem in adhesion reliability. Comparative Examples 1 to 20 Sn alloy ingots having a composition shown in Tables 7 and 8 were prepared using a normal pressure melting furnace using raw materials such as Sn, Sb, Te, and P having a purity of 99.9%. These ingots were then extruded to a diameter of 1 mm to prepare wire-type samples. In order to evaluate the weldability of the obtained alloy, a nitrogen gas stream at 3 40 ° C 16 315040 1231238 was placed on the copper plate, and after melting and melting, the metal wire was placed in a nitrogen atmosphere. Slowly cool the heart, and the friendliness of the cold under the more severe conditions. The thicker the father took, the more the section was repeated on the copper plate and slowly cooled. It will be polished, observe the shape, and the size of the phase. Junction = ground and about 100 microns. The sizes of the dots are in order to estimate the ‘combined reliability’. The diameter and ^ ^ are used to conduct crystal coupling on the copper lead and _. Verse # = Fake Chips for Tops Chips. This mode f. A temperature cycle test was performed at a temperature of _ 5α ° σ at a temperature of _ 5α ° σ at a valence of 5 valence 5% oxygen resin. When the wafer or its sticky: cracks, it is rated as "good"; if J is produced, the results are shown in Tables 7 and 8. A table 7 1MJ tuj tuj tuj tuj IUJ 1UJ JUJ JUJ rnj luxury shift luxury luxury luxury comparison comparison comparison comparison -Ef Jly " 1Jfll JUI · 7IE—— ·· J1UJ JB · 7 bbbbbb Bbb tkttttttfct

Sn Sb 補足差額 5 補足差額 5 補足差額 8 補足差額 8 補足差額 12 補足差額 12 補足差額 20 補足差額 20 補足差額 3 補足差額 25Sn Sb Top up balance 5 Top up balance 5 Top up balance 8 Top up balance 8 Top up balance 12 Top up balance 12 Top up balance 20 Top up balance 3 Top up balance 25

Te 黏合信賴度 0 6 0 6 0 6 0 6 0 0 良良良良良良良良良良 不不不不不不不不不不 π 315040 1231238 表8 成 比較例11 比較例12 比較例1 3 比較例1 4 比較例1 5 比較例1 6 比較例17 比較例1 8 比較例19 補足差額 補足差額 補足差額 補足差額 補足差額 補足差額 補足差額 補足差額 補足差額 比較例2:0補足差額 %T060606 0 600 量 、 1Te adhesion reliability 0 6 0 6 0 6 0 6 0 0 Liang Liang Liang Liang Liang Liang Liang Liang Liang No No No No No No No No No π 315040 1231238 Table 8 Comparative Example 11 Comparative Example 12 Comparative Example 1 3 Comparative Example 1 4 Comparative Example 1 5 Comparative Example 1 6 Comparative Example 17 Comparative Example 1 8 Comparative Example 19 Top-up difference Top-up difference Top-up difference Top-up difference Top-up difference Top-up difference Top-up difference Top-up difference Comparative Example 2: 0 Top-up difference% T060606 0 600 volume, 1

黏合信賴度 良良良良良良良良良良 不不不不不不不不不不 從表7與8顯知，根據本發明Sn合金之有用性可予 以實體化。 如上述，本發明第一態樣之焊接填料金屬包含5至20 重量°/〇 Sb及0.01至5重量％ Te，剩餘部分為Sn及附帶之 雜質。結果可使晶粒黏合時產生的石’相微小化，因而防止 發生裂缝。此外，若於焊接填料金屬中添加總量為0.01至 5重量％之Ag、Cu、Fe與Ni之至少一員，可進一步增進 該焊接填料金屬之熱循環性。 本發明第二態樣之焊接填料金屬包含5至20重量。/〇 Sb、0.01至5重量％ Te、0.001至0.5重量％ P，剩餘部分 為Sn及附帶之雜質。結果，可增進熔接性，於晶粒黏合 時半導體元件與焊接填料金屬之間不容易產生空隙。若於 焊接填料金屬中添加總量為〇. 〇 1至5重量％之A g ' C U、 Fe與Ni之至少一員，可進一步增進該焊接填料金屬之熱 18 315040 1231238 循環性。 根據本發明之第三態樣係提供使用根據本發明第一 或第二態樣之焊接填料金屬的半導體裝置之組裝方法。使 用本發明之焊接填料金屬，可以低成本獲得高度信賴性之 半導體裝置。 根據本發明之第四態樣係提供使用根據本發明第一 或第二態樣之焊接填料金屬所組裝之半導體裝置。使用本 發明之焊接填料金屬，可相當經濟地獲得高度信賴性之半 導體裝置。' 15040Bonding Reliability Liangliang Liangliang Liangliang Liangliang Liangliang It is clear from Tables 7 and 8 that the usefulness of the Sn alloy according to the present invention can be solidified. As described above, the welding filler metal of the first aspect of the present invention contains 5 to 20 wt.% Sb and 0.01 to 5 wt.% Te, and the remainder is Sn and incidental impurities. As a result, the stone 'phase generated when the crystal grains are bonded can be miniaturized, thereby preventing cracks from occurring. In addition, if at least one of Ag, Cu, Fe, and Ni is added to the solder filler metal in a total amount of 0.01 to 5% by weight, the thermal cycleability of the solder filler metal can be further improved. The welding filler metal of the second aspect of the present invention contains 5 to 20 weight. 〇 Sb, 0.01 to 5% by weight Te, 0.001 to 0.5% by weight P, and the remainder is Sn and incidental impurities. As a result, the weldability can be improved, and voids are not easily generated between the semiconductor element and the solder filler metal when the crystal grains are bonded. If at least one of Ag'C U, Fe and Ni is added to the welding filler metal in an amount of 0.01 to 5% by weight, the heat of the welding filler metal can be further improved. 18 315040 1231238 Cycleability. A third aspect according to the present invention provides a method for assembling a semiconductor device using the solder filler metal according to the first or second aspect of the present invention. By using the solder filler metal of the present invention, a highly reliable semiconductor device can be obtained at a low cost. A fourth aspect according to the present invention provides a semiconductor device assembled using the solder filler metal according to the first or second aspect of the present invention. With the solder filler metal of the present invention, a highly reliable semiconductor device can be obtained economically. '' 15040

Claims (1)

1231238 拾、申請專利範圍： l 一種焊接填岬金屬，其包 认 至5重量％拉，剩餘部分為s及〇重量％Sb及〇·〇]-種焊接填料金屬，其係於如二：帶：雜質/ 接填料全屬ψ θ 專利範圍第1 I貞 孟屬中添加總量為〇 01至5舌旦 員之埤 Fe與Ni之至少一員。 重里％之Ag、Cu、 —種焊接填料金屬，其包含5至2〇舌旦g 5重晉。τ 〇重里％ Sb、〇 Λ 里 Λ Te、〇·〇〇ι 至 0‘5 重旦y ρ 〇·〇ι 至 附帶之雜質。 里。，剩餘部分為Sn及 種焊接填料金屬，其係 接填料全屬中\ ；如申請專利範圍第3碩 ^與恥之至少一員。·01至5重1°〆❶之Ag、Cu、 種半導體裝置 主^ 方法，係藉使用焊接埴P “體元件進行晶粒黏合以組裝半導體/置、：：屬對 用如申請專利範圍第項中任一項二曰置=中係使 作為焊接填料金屬。 、之烊接填料金屬 -種半導體裝置，其係藉 項中扛_ s #曰使用如甲W專利範圍第1至4 、 項之烊接填料金屬組裝而成。 2 3· 4. 5. 6. 3)5040 201231238 Patent application scope: l A welding filler metal, which is recognized to be 5% by weight, and the remaining part is s and 0% by weight Sb and 〇 · 〇]-a welding filler metal, which is based on two: : Impurities / fillers all belong to ψ θ Patent range 1 I At least one of Fe and Ni is added to the genus genus in a total amount of 0.01 to 5. Weight% of Ag, Cu, a welding filler metal, which contains 5 to 20 g of dendrite 5 weight. τ 〇% by weight Sb, 〇 Λ by Λ Te, 〇〇〇ι to 0'5 dam y ρ 〇 · 〇ι to incidental impurities. in. , The remaining part is Sn and a variety of welding filler metals, the connection fillers are all in the \; such as the scope of patent application No. 3 and at least one of the shame. · 01 to 5 weights of 1 °, Ag, Cu, semiconductor device master method, by using soldering "P" body components for die bonding to assemble semiconductors: Any one of the two items is set to be used as a filler filler metal. ， The filler filler metal-a type of semiconductor device, which is borrowed from the item _ s #The use of such as a W patent range 1 to 4, Assembled with filler metal. 2 3 · 4. 5. 6. 3) 5040 20 1231238 發明專利說明書 書格式、順序及粗體字’請勿任意更動’※記號部分請勿填寫） ※申請案號： ※申請曰期：卜一卜τ 糸1?(：分類：与/c < 37¾ 壹、 發明名稱：（中文/英文） 焊接填料金屬、使用該焊接填料金屬之半導體裝置之組裝方法以及半導， 裝置 \ 1 BRAZING FILLER METAL, ASSEMBLY METHOD FOR SEMICONDUCTOR DEVICE USING SAME, AND SEMICONDUCTOR DEVICE 貳、 申請人：（共1人） 姓名或名稱··（中文/英文） 住友金屬鑛山股份有限公司/SUMITOMO METAL MINING CO.，LTD· 代表人：（中文/英文）福島孝一/FUKUSHIMA，KOUICHI 住居所或營業所地址：（中文/英文） 曰本國東京都港區新橋5 丁目11番3號 11-3, Shimbashi 5-chome, Minato-ku, Tokyo, Japan 國籍··（中文/英文）曰本國/JAPAN 參、 發明人··（共2人） 姓名··（中文/英文） 1.森伸幹/MORI，N0BUKI 2.森本圭/1«01?以01'0，紐1 住居所地址：（中文/英文） 1· 2.地址同 曰本國東京都青梅市末廣町1-6-1住友金屬鑛山股份有限公司電子 事業本部内 c/o SUMITOMO METAL MINING CO·， LTD.， DENSHI JIGYO BUNAI， 6-1， Suehiro-cho， 1-chome， Oume-shi， Tokyo， Japan 國籍：（中文/英文）曰本國/JAPAN 3150401231238 Format, order and boldface of the invention patent specification and the words 'Please do not change arbitrarily' (※ Please do not fill in the marked part) ※ Application number: ※ Application date: Bu Yibu τ 糸 1? (: Classification: and / c & lt 37¾ Ⅰ. Name of Invention: (Chinese / English) Welding filler metal, assembly method of semiconductor device using the filler filler metal, semiconductor device, and device \ 1 BRAZING FILLER METAL, ASSEMBLY METHOD FOR SEMICONDUCTOR DEVICE USING SAME, AND SEMICONDUCTOR DEVICE 贰Applicant: (1 person in total) Name or name ... (Chinese / English) Sumitomo Metal Mining Co., Ltd./SUMITOMO METAL MINING CO., LTD. Representative: (Chinese / English) Fukushima Takaichi / FUKUSHIMA, KOUICHI Residence Address of the office or business office: (Chinese / English) 11-3, Shimbashi 5-chome, Minato-ku, Tokyo, Japan, 5-3, Shimbashi, Shinbashi, Minato-ku, Tokyo, Japan Country (· Chinese / English) / JAPAN Participants, inventors ... (2 in total) Name ... (Chinese / English) 1. Mori Shingan / MORI, N0BUKI 2. Morimoto Kei / 1 «01? With 01'0, New 1 Address of residence : (Chinese / English) 1 · 2. Address: c / o SUMITOMO METAL MINING CO., LTD., DENSHI JIGYO, Sumitomo Metal Mining Co., Ltd., 1-6-1, Suehiro-cho, Ome, Tokyo, Japan BUNAI, 6-1, Suehiro-cho, 1-chome, Oume-shi, Tokyo, Japan Nationality: (Chinese / English) Japanese country / JAPAN 315040
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WO2012077228A1 (en) * 2010-12-10 2012-06-14 三菱電機株式会社 Lead-free solder alloy, semiconductor device, and method for manufacturing semiconductor device
JP5878290B2 (en) * 2010-12-14 2016-03-08 株式会社日本スペリア社 Lead-free solder alloy
JP5635561B2 (en) * 2012-06-21 2014-12-03 株式会社タムラ製作所 Solder composition
WO2014103955A1 (en) * 2012-12-25 2014-07-03 三菱マテリアル株式会社 Power module
CN106271181A (en) * 2015-05-13 2017-01-04 广西民族大学 A kind of Sn-Sb-X system high-temperature oxidation resistant lead-free brazing
CN105750757A (en) * 2016-03-22 2016-07-13 苏州虎伏新材料科技有限公司 Welding material for surfacing to obtain Sn-based babbitt alloy wear-resisting layer
JP6355091B1 (en) * 2017-03-07 2018-07-11 パナソニックＩｐマネジメント株式会社 Solder alloy and joint structure using the same
JP6355092B1 (en) * 2017-05-11 2018-07-11 パナソニックＩｐマネジメント株式会社 Solder alloy and joint structure using the same
JP6998557B2 (en) 2017-09-29 2022-01-18 パナソニックＩｐマネジメント株式会社 Solder alloy and joint structure using it

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