CN1681620A - Soldering filler metal, assembly method for semiconductor device using same, and semiconductor device - Google Patents

Soldering filler metal, assembly method for semiconductor device using same, and semiconductor device Download PDF

Info

Publication number
CN1681620A
CN1681620A CNA038219441A CN03821944A CN1681620A CN 1681620 A CN1681620 A CN 1681620A CN A038219441 A CNA038219441 A CN A038219441A CN 03821944 A CN03821944 A CN 03821944A CN 1681620 A CN1681620 A CN 1681620A
Authority
CN
China
Prior art keywords
examples
solder
weight
surplus surplus
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA038219441A
Other languages
Chinese (zh)
Other versions
CN100404193C (en
Inventor
森伸干
森本圭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Publication of CN1681620A publication Critical patent/CN1681620A/en
Application granted granted Critical
Publication of CN100404193C publication Critical patent/CN100404193C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0227—Rods, wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29311—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01052—Tellurium [Te]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Abstract

In conventional Sn/Sb type brazing filler metals, there are disadvantages that large grains in a beta' phase are likely to deposit and that cracks are likely to occur in the elements and the bonded portion, and that voids are formed when the above described special coating is provided on the die bonding plane of the semiconductor element. The brazing filler metal of the present invention comprises 5 to 20 weight % of Sb and 0.01 to 5 weight % of Te, with the balance being Sn and incidental impurities, or a brazing filler metal comprises 5 to 20 weight % of Sb, 0.01 to 5 weight % of Te, 0.001 to 0.5 weight % of P, with the balance being Sn and incidental impurities.

Description

Solder, use the assembly method and the semiconductor device of the semiconductor device of this solder
Technical field
The present invention relates to a kind of high-temp solder (brazing filler metal), be used for the chips welding (die bonding) of semiconductor element and the assembling of electronic component, especially relate to the high-temp solder of a kind of not leaded (Pb).
Background technology
When high-frequency component or semiconductor element are welded on lead frame (lead frame) or the analog with assembling semiconductor device or electronic component by chip, use fusing point to be approximately 300 ℃ Au-type solder or Pb-type solder, wherein with the Sn (Sn of 20% weight of Au/20% weight, and all the other are Au) represent Au-type solder, represent Pb-type solder with the Sn of Pb/5% weight (Sn of 5% weight, and all the other are Pb).
The reason that the solder that uses fusing point to be approximately 300 ℃ is used for chips welding is: when under 240 ℃ to 260 ℃ temperature and the condition of heating time that is no more than 10 seconds, with the semiconductor device of assembling when being installed on the printed circuit board (PCB), above-mentioned solder can cause performance to reduce in order to prevent the solder reflow of using when the chips welding.And, in the assembling of electronic component, using this solder, this solder that can make use in previous step is rapid can not melt once more carrying out soldering step (at 220 ℃ to 260 ℃) time subsequently.
Yet this Au-type solder has expensive problem, and Pb-type solder has problem of environment pollution caused.Thereby, need a kind of solder that does not contain Pb, economical and practical and can carry out soldering in 300 ℃ to 340 ℃ temperature range, its fusion temperature is 260 ℃ or higher, and has good wetability.
In order to satisfy above-mentioned requirements, design among a kind of Fe that comprises 0.005% to 5.0% weight and the Ni welding material of one of them at least, and the Ag or the Cu of 0.05% to 9% weight or the Ag of 0.1% to 15% weight that preferably comprise 0.1% to 20% weight, Cu with 0.05% to 5% weight, and comprising the Sb of 0.1% to 15% weight, all the other are mainly Sn (referring to the open No.Tokukai2001-144111 of Japan Patent).
In addition, also design has another kind to be used for the welding material of chips welding, this material comprises the Sb of 11.0% to 20.0% weight, the P of 0.01% to 0.2% weight, and preferably include among the Cu of 0.005% to 5.0% weight and the Ni at least one of them, all the other are Sn and subsidiary impurity (referring to the open No.Tokukai2001-284792 of Japan Patent).
Some designs have solved the not good shortcoming of Sn/Sb type scolder (solder) thermal fatigue resistance, and have reduced on a printed circuit board (PCB) time, to place the resistance variations of the chips welding part under the hot conditions by welded and installed when semiconductor device.
In addition, for improving the wetability of scolder, on the solder side (after this, being called " the chips welding face of semiconductor element ") of semiconductor element and scolder, a multi-level metal level is set, such as Cr-Ni-Ag or Ti-Cu-Ag.When the scolder that uses the Sn/Sb type during as soldering material for die bonding, the Ag that is positioned at the outermost surface of many metal levels melts with welding material, exceedingly reduced welding material fusing point (referring among the open No.Tokukai2001-196393 of Japan Patent the 0006th section).For addressing this problem, designed a kind of method, wherein on the chips welding face of semiconductor device, form one first metal coating and one second metal coating successively, this second metal coating is a kind of coating that comprises tin or antimony, and uses Sn/Sb type scolder as scolder (referring to the 0008th section among the open No.Tokukai2001-196393 of Japan Patent).
Particularly, when the semiconductor element heat output was big, the Sb type scolder that uses a kind of Sn5% of containing weight was to obtain high reliability.Yet at this moment there is a problem, promptly since semiconductor device when work produce heat or exert pressure, intermediate metal layer and solder reaction in many metal levels such as Ni and Cu, generate a hard crisp intermetallic compounds layer, rupture from this layer further developed (referring to the Japan Patent No.3033378 the 0005th to 0006 section).In order to address this problem, at this a kind of use of Sn/Sb type scolder is described, it is by forming the outermost layer of a Cr, Ti, Mo, W, Zr and Hf or a surface metal-layer being set on metal level on the chips welding face of semiconductor element, this surface metal-layer comprises at least a metal of selecting (referring to the 0010th to 0011 section among the Japan Patent No.3033378) from the cohort that Sn, Sb, Au, Ag, Pt, Ni, Cu, Zn, Al, Co, Fe and Pb form.
Two kinds of methods according to above-mentioned can prevent that the fusing point of scolder from too reducing, and maybe can prevent to generate hard crisp intermetallic compounds layer.Yet, still can produce a new problem: promptly after the chips welding, on the semiconductor element side of solder layer, can produce many cavities.The appearance in cavity has destroyed long-term stability.
In the Sn/Sb type solder that provides before this, exist the bulky grain of following shortcoming: β ' in mutually to be easy to deposition and in element and welding portion, be easy to occur the crack, and when the chips welding face of semiconductor element is provided with above-mentioned specific coatings, be formed with the cavity; These shortcomings do not overcome so far yet.Thereby, can not think that Sn/Sb type solder is perfect.
Summary of the invention
Consider above-mentioned situation, the purpose of this invention is to provide a kind of new Sn/Sb type solder, it does not contain Pb and is applicable to chips welding semiconductor element or mounting electronic part.
For addressing the above problem, according to a first aspect of the present invention, a kind of solder comprises: the Te of the Sb of 5% to 20% weight and 0.01% to 5% weight, all the other are Sn and subsidiary impurity.And,, can in solder, add total weight and be among 0.01% to 5% Ag, Cu, Fe and the Ni at least one of them for improving the thermal cycle of solder.
According to a second aspect of the present invention, a kind of solder comprises: the Te of the Sb of 5% to 20% weight, 0.01% to 5% weight and the P of 0.001% to 0.5% weight, all the other are Sn and subsidiary impurity.And,, can in solder, add among Ag, Cu, Fe and the Ni of total weight 0.01% to 5% at least one of them for improving the thermal cycle of solder.
According to a third aspect of the present invention, provide a kind of assembly method of semiconductor device, wherein by using a kind of solder to come the chips welding semiconductor element, with assembling semiconductor device.Wherein use according to of the present invention first or the solder of second aspect as this solder.
According to a fourth aspect of the present invention, by using according to of the present invention first or this solder assembling semiconductor device of second aspect.
Embodiment
For addressing the above problem, according to a first aspect of the present invention, a kind of solder comprises: the Te of the Sb of 5% to 20% weight and 0.01% to 5% weight, all the other are Sn and subsidiary impurity.For the β ' phase that refinement produces, add Te to prevent the crack.The concentration of Te be set at 0.01% to 5% of weight be because: if this concentration is lower than 0.01% weight, then can't obtain the effect of enough refinement β ' phases, if and this concentration then can not obtain the effect of further refinement β ' phase, and only increase cost above 5% weight.
The concentration of Sb be set at 5% to 20% weight be because: if this concentration is lower than 5%, then this liquidus temperature just is lower than 240 ℃, and this solder can not bear 260 ℃ of processing temperatures using in the subsequent step after the chips welding.If its concentration surpasses 20% weight, then this liquidus temperature surpasses 320 ℃, and it is not enough that 340 ℃ chips welding temperature becomes.If in solder, add total amount and be among Ag, Cu, Fe and the Ni of 0.01% to 5% weight at least one of them and scatter, then can further improve the thermal cycle of solder.
According to a second aspect of the present invention, a kind of solder, it comprises: the Te of the Sb of 5% to 20% weight, 0.01% to 5% weight, the P of 0.001% to 0.5% weight, all the other are Sn and subsidiary impurity.The reason of the scope of the addition of Sb and Te is identical with a first aspect of the present invention.Adding P is in order further to improve wetability, can not to be prone to the cavity between semiconductor element and solder like this when chips welding.If the concentration of P less than 0.001% weight, then can not obtain such effect, and if add the P that surpasses 0.5% weight, then be difficult to realize low-cost casting.
Can suppress the reason that the cavity occurs by adding P and be that the inventor thinks: when solder melt, the preferential and P of oxygen reacted, and avoiding formation one oxide-film on the melting solid surface, thereby had improved wetability.As in the solder of first aspect present invention,, then can further improve the thermal cycle of solder if in solder, add among Ag, Cu, Fe and the Ni that total amount is 0.01% to 5% weight at least one of them and scatter.
When using the solder of the present invention first and second aspects, can use traditional step and condition and do not need any change.Use the semiconductor device of solder manufacturing of the present invention to have and use the solder made by traditional gold-base alloy or reliability that the semiconductor device made by the solder that lead-containing alloy is made is same or higher reliability.
Below will be by the more detailed description the present invention of the form of example.
Example 1 to 20
By the normal pressure melting furnace, use Sn, the Sb and the Te that have 99.9% purity separately to make the Sn alloy pig, its component is presented in the table 1, and then, the diameter that this alloy pig is squeezed into 1mm is to make wire type sample.
Be the wetability of assess alloy, under 340 ℃, in nitrogen current, this wire be pressed on the copper coin that after the fusing, this wire is slowly cooling in nitrogen.In order under the severeer condition of β ' phase chap, to assess wetability, cool off slowly.
Be pressed on the copper coin and slowly the cross section of the part of cooling ground and polished, to observe the size of the β ' phase that forms.As a result, the size of β ' phase all can not surpass 20 μ m.This thinks to add the result of Te.
For the assessment welding reliability, prepare a blank chip (dummy chip) by precipitate A u on the silicon solder side, and, this blank chip is welded on the copper lead frame by using sample and the die bonder of diameter 1mm.Then, by using epoxy resin to carry out molded to this blank chip.The temperature cycling test of in-50 ℃ to 150 ℃ temperature range, using this mechanograph to carry out 500 circulations.After this, open resin, observe welding portion.When not having the crack on this chip or the welding portion, be evaluated as " excellent "; Maybe when the crack occurring, be evaluated as " bad ".The result is presented in the table 1.
The part mechanograph is installed on the mounting panel, whether has any unusually at the chip of this installation or welding portion, and whether the cavity is arranged in solder to detect.As a result, in all samples, all do not find any unusually, and do not confirm not have any cavity.
Table 1
Component (wt.%; Percentage by weight) Soldering reliability
????Sn ????Sb ????Te
Example 1 example 2 examples 3 examples 4 examples 5 examples 6 examples 7 examples 8 examples 9 examples 10 examples 11 examples 12 examples 13 examples 14 examples 15 examples 16 examples 17 examples 18 examples 19 examples 20 Surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus ????5 ????5 ????5 ????5 ????5 ????8 ????8 ????8 ????8 ????8 ????12 ????12 ????12 ????12 ????12 ????20 ????20 ????20 ????20 ????20 ????0.05 ????0.1 ????0.5 ????2.0 ????5.0 ????0.05 ????0.1 ????0.5 ????2.0 ????5.0 ????0.05 ????0.1 ????0.5 ????2.0 ????5.0 ????0.05 ????0.1 ????0.5 ????2.0 ????5.0 Excellent excellent
No problem according to the soldering reliability of Sn alloy of the present invention as can be seen from Table 1.
Example 21 to 80
Use the raw material of Sn, the Sb, Te and the P that have 99.9% purity separately to obtain the Sn alloy pig by the normal pressure melting furnace, its component is presented at table 2 in 5.Then, this alloy pig is squeezed into the diameter of 1mm to make wire type sample.
The wetability of the alloy that obtains for assessment is pressed in this wire on the copper coin in nitrogen current under 340 ℃, and after the fusing, this wire is slowly cooling in nitrogen.In order under the severeer condition of β ' phase chap, to assess wetability, cool off slowly.
Be pressed on the copper coin and slowly the cross section of the part of cooling ground and polished, to observe the size of the β ' phase that forms.As a result, be similar to example 1 to 20, β ' all can not surpass 20 μ m mutually.This thinks to add the result of Te.
For the assessment welding reliability, prepare a blank chip by precipitate A u on the silicon solder side, use sample and the die bonder of diameter 1mm that this blank chip is welded on the copper lead frame.Then, by using epoxy resin to carry out molded to this blank chip.The temperature cycling test of in-50 ℃ to 150 ℃ temperature range, using this mechanograph to carry out 500 circulations.After this, open resin, observe welding portion.When not having the crack on this chip or the welding portion, be evaluated as " excellent "; Maybe when the crack occurring, be evaluated as " bad ".The result is presented at table 2 in 5.
The part mechanograph is installed on the mounting panel, with detect in this installations chip or welding portion, whether have any unusually, and whether the cavity is arranged in solder.As a result, in all samples, all do not find any unusually, and do not confirm not have any cavity.
Table 2
Component (wt.%; Percentage by weight) Soldering reliability
???Sn ????Sb ????Te ?????P
Example 21 examples 22 examples 23 examples 24 examples 25 Surplus surplus surplus surplus surplus ????5 ????5 ????5 ????5 ????5 ????0.1 ????0.1 ????0.1 ????0.1 ????0.1 ????0.005 ????0.05 ????0.1 ????0.3 ????0.5 Excellent excellent
Example 26 examples 27 examples 28 examples 29 examples 30 examples 31 examples 32 examples 33 examples 34 examples 35 Surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus ????5 ????5 ????5 ????5 ????5 ????5 ????5 ????5 ????5 ????5 ????2.0 ????2.0 ????2.0 ????2.0 ????2.0 ????5.0 ????5.0 ????5.0 ????5.0 ????5.0 ????0.005 ????0.05 ????0.1 ????0.3 ????0.5 ????0.005 ????0.05 ????0.1 ????0.3 ????0.5 Excellent excellent
Table 3
Component (wt.%; Percentage by weight) Soldering reliability
??Sn ????Sb ????Te ????P
Example 36 examples 37 examples 38 examples 39 examples 40 examples 41 examples 42 examples 43 examples 44 examples 45 examples 46 examples 47 Surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus ????8 ????8 ????8 ????8 ????8 ????8 ????8 ????8 ????8 ????8 ????8 ????8 ????0.1 ????0.1 ????0.1 ????0.1 ????0.1 ????2.0 ????2.0 ????2.0 ????2.0 ????2.0 ????5.0 ????5.0 ????0.005 ????0.05 ????0.1 ????0.3 ????0.5 ????0.005 ????0.05 ????0.1 ????0.3 ????0.5 ????0.005 ????0.05 Excellent excellent
Example 48 examples 49 examples 50 Surplus surplus surplus ????8 ????8 ????8 ????5.0 ????5.0 ????5.0 ????0.1 ????0.3 ????0.5 Excellent excellent
Table 4
Component (wt.%; Percentage by weight) Soldering reliability
??Sn ????Sb ????Te ????P
Example 51 examples 52 examples 53 examples 54 examples 55 examples 56 examples 57 examples 58 examples 59 examples 60 examples 61 examples 62 examples 63 examples 64 examples 65 Surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus ????12 ????12 ????12 ????12 ????12 ????12 ????12 ????12 ????12 ????12 ????12 ????12 ????12 ????12 ????12 ????0.1 ????0.1 ????0.1 ????0.1 ????0.1 ????2.0 ????2.0 ????2.0 ????2.0 ????2.0 ????5.0 ????5.0 ????5.0 ????5.0 ????5.0 ????0.005 ????0.05 ????0.1 ????0.3 ????0.5 ????0.005 ????0.05 ????0.1 ????0.3 ????0.5 ????0.005 ????0.05 ????0.1 ????0.3 ????0.5 Excellent excellent excellent excellent
Table 5
Component (wt.%; Percentage by weight) Soldering reliability
????Sn ????Sb ????Te ????P
Example 66 Surplus ????20 ????0.1 ????0.005 Excellent
Example 67 examples 68 examples 69 examples 70 examples 71 examples 72 examples 73 examples 74 examples 75 examples 76 examples 77 examples 78 examples 79 examples 80 Surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus ????20 ????20 ????20 ????20 ????20 ????20 ????20 ????20 ????20 ????20 ????20 ????20 ????20 ????20 ????0.1 ????0.1 ????0.1 ????0.1 ????2.0 ????2.0 ????2.0 ????2.0 ????2.0 ????5.0 ????5.0 ????5.0 ????5.0 ????5.0 ????0.05 ????0.1 ????0.3 ????0.5 ????0.005 ????0.05 ????0.1 ????0.3 ????0.5 ????0.005 ????0.05 ????0.1 ????0.3 ????0.5 Excellent excellent excellent
No problem according to the soldering reliability of Sn alloy of the present invention as can be seen from table 2 to table 5.
Example 81 to 100
Use the raw material of Sn, Sb, Te, P, Ag, Cu, Fe and the Ni of 99.9% purity of respectively doing for oneself to obtain the Sn alloy pig by the normal pressure melting furnace, its component is presented in the table 6.Then, this alloy pig is squeezed into the diameter of 1mm to make wire type sample.
The wetability of the alloy that obtains for assessment is pressed in this wire on the copper coin in nitrogen current under 340 ℃, and after the fusing, this wire is slowly cooling in nitrogen.In order under the severeer condition of β ' phase chap, to assess wetability, cool off slowly.
Be pressed on the copper coin and slowly the cross section of the part of cooling ground and polished, to observe the size of the β ' phase that forms.As a result, be similar to example 1 to 20, β ' all can not surpass 20 μ m mutually.This thinks to add the result of Te.
Be the assessment welding reliability, have the blank chip of metal film by precipitation Ni and Sb preparation one on the silicon solder side, the blank chip that the sample of use diameter 1mm and die bonder will have metal film is welded on the copper lead frame.Then, by using epoxy resin to carry out molded to this blank chip.The temperature cycling test of in-50 ℃ to 150 ℃ temperature range, using this mechanograph to carry out 500 circulations., open resin, observe welding portion thereafter.On this chip or welding portion, do not have the crack, be evaluated as " excellent "; Maybe when the crack occurring, be evaluated as " bad ".The result is presented in the table 6.
The part mechanograph is installed on the mounting panel, in the chip of this installation or welding portion, whether has any unusually, and whether the cavity is arranged in solder to detect.As a result, in all samples, all do not find any unusually, and do not confirm not have any cavity.
Table 6
Component (wt.%; Percentage by weight) Soldering reliability
??Sn ??Sb ??Te ?P ??Ag ??Cu ??Fe ????Ni
Example 81 examples 82 examples 83 examples 84 examples 85 examples 86 examples 87 examples 88 examples 89 examples 90 examples 91 examples 92 examples 93 examples 94 examples 95 examples 96 Surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus ??8 ??8 ??8 ??8 ??8 ??12 ??12 ??12 ??12 ??12 ??8 ??8 ??8 ??8 ??8 ??12 ??0.5 ??0.5 ??0.5 ??0.5 ??0.5 ??0.5 ??0.5 ??0.5 ??0.5 ??0.5 ??0.5 ??0.5 ??0.5 ?0.5 ?0.5 ?0.5 ?0.0 ?0.0 ?0.0 ?0.0 ?0.0 ?0.0 ?0.0 ?0.0 ?0.0 ?0.0 ?0.1 ?0.1 ?0.1 ?0.1 ?0.1 ?0.1 ??0.5 ??- ??- ??- ??0.5 ??0.5 ??- ??- ??- ??0.5 ??0.5 ??- ??- ??- ??0.5 ??0.5 ??- ??0.5 ??- ??- ??0.5 ??- ??0.5 ??- ??- ??0.5 ??- ??0.5 ??- ??- ??0.5 ??- ??- ??- ??0.5 ??- ??0.5 ??- ??- ??0.5 ??- ??0.5 ??- ??- ??0.5 ??- ??0.5 ??- ????- ????- ????- ????0.5 ????0.5 ????- ????- ????- ????0.5 ????0.5 ????- ????- ????- ????0.5 ????0.5 ????- Excellent
Example 97 examples 98 examples 99 examples 100 Surplus surplus surplus surplus ????12 ????12 ????12 ????12 ????0.5 ????0.5 ????0.5 ????0.5 ????0.1 ????0.1 ????0.1 ????0.1 ????- ????- ????- ????0.5 ??0.5 ??- ??- ??0.5 ??- ??0.5 ??- ??0.5 ????- ????- ????0.5 ????0.5 Excellent
No problem according to the soldering reliability of Sn alloy of the present invention as can be seen from Table 6.
Case of comparative examples 1 to 20
Use the raw material of Sn, the Sb, Te and the P that have 99.9% purity separately to obtain the Sn alloy pig by the normal pressure melting furnace, its composition is presented in table 7 and the table 8.Then, this alloy pig is squeezed into the diameter of 1mm to make wire type sample.
The wetability of the alloy that obtains for assessment is pressed in this wire on the copper coin in nitrogen current under 340 ℃, and after the fusing, this wire is slowly cooling in nitrogen.In order under the severeer condition of β ' phase chap, to assess wetability, cool off slowly.
Be pressed on the copper coin and slowly the cross section of the part of cooling ground and polished, to observe the size of the β ' phase that forms.As a result, the size of β ' phase is all about 100 μ m.
Be the assessment welding reliability,, use sample and the die bonder of diameter 1mm that this blank chip is welded on the Pot metal frame by preparing a blank chip at silicon solder side precipitate A u.Then, by using epoxy resin to carry out molded to this blank chip.The temperature cycling test of in-50 ℃ to 150 ℃ temperature range, using this mechanograph to carry out 500 circulations.After this, open resin, observe welding portion.When not having the crack on this chip or the welding portion, be evaluated as " excellent "; Maybe when the crack occurring, be evaluated as " bad ".The result is presented in table 7 and the table 8.
Table 7
Component (wt.%; Percentage by weight) Soldering reliability
????Sn ????Sb ????Te
Case of comparative examples 1 case of comparative examples 2 case of comparative examples 3 case of comparative examples 4 case of comparative examples 5 Surplus surplus surplus surplus surplus ????5 ????5 ????8 ????8 ????12 ????0.0 ????6.0 ????0.0 ????6.0 ????0.0 Bad bad
Case of comparative examples 6 case of comparative examples 7 case of comparative examples 8 case of comparative examples 9 case of comparative examples 10 Surplus surplus surplus surplus surplus ????12 ????20 ????20 ????3 ????25 ????6.0 ????0.0 ????6.0 ????0.5 ????0.5 Bad bad
Table 8
Component (wt.%; Percentage by weight) Soldering reliability
?????Sn ????Sb ????Te ????P
Case of comparative examples 11 case of comparative examples 12 case of comparative examples 13 case of comparative examples 14 case of comparative examples 15 case of comparative examples 16 case of comparative examples 17 case of comparative examples 18 case of comparative examples 19 case of comparative examples 20 Surplus surplus surplus surplus surplus surplus surplus surplus surplus surplus ????5 ????5 ????8 ????8 ????12 ????12 ????20 ????20 ????3 ????25 ????0.0 ????6.0 ????0.0 ????6.0 ????0.0 ????6.0 ????0.0 ????6.0 ????0.5 ????0.5 ????0.1 ????0.3 ????0.1 ????0.3 ????0.1 ????0.3 ????0.1 ????0.3 ????0.3 ????0.3 Bad bad
Can confirm the practicality of Sn alloy of the present invention from table 7 and table 8.
As mentioned above, the solder of first aspect present invention comprises: the Te of the Sb of 5% to 20% weight and 0.01% to 5% weight, all the other are Sn and subsidiary impurity.As a result, the β ' that produces during chips welding can be prevented to produce the crack by refinement mutually.And, if in solder, add Ag, Cu, Fe and the Ni of total amount from 0.01% to 5% weight at least one of them and scatter, can further improve the thermal cycle of solder.
The solder of second aspect present invention comprises: the Te of the Sb of 5% to 20% weight, 0.01% to 5% weight and the P of 0.001% to 5% weight, all the other are Sn and subsidiary impurity.As a result, improve wetability, and when chips welding, be not easy to occur the cavity between semiconductor element and the solder.If in solder, add Ag, Cu, Fe and the Ni of total amount from 0.01% to 5% weight at least one of them and scatter, can further improve the thermal cycle of solder.
According to third aspect present invention, use is according to the assembly method of a kind of semiconductor device of the solder of the present invention first or second aspect.The solder of the application of the invention can obtain the semiconductor device of high reliability at low cost.
According to fourth aspect present invention, use the semiconductor device that a kind of assembling is provided according to the solder of the present invention first or second aspect.The solder of the application of the invention, this semiconductor device can be more economical and be had a high reliability.

Claims (6)

1. solder, it comprises: the Te of the Sb of 5% to 20% weight and 0.01% to 5% weight, all the other are Sn and subsidiary impurity.
2. solder wherein adds among Ag, Cu, Fe and the Ni that total amount is 0.01% to 5% weight at least one of them in solder as claimed in claim 1.
3. solder, it comprises: the Te of the Sb of 5% to 20% weight, 0.01% to 5% weight, the P of 0.001% to 0.5% weight, all the other are Sn and unavoidable impurities.
4. solder wherein adds among Ag, Cu, Fe and the Ni that total amount is 0.01% to 5% weight at least one of them in solder as claimed in claim 3.
5. the assembly method of a semiconductor device wherein, uses a solder to come the chips welding semiconductor element with the assembling semiconductor device, wherein uses as each described solder in the claim 1 to 4 as this solder.
6. semiconductor device, it is assembled as each described solder in the claim 1 to 4 by using.
CNB038219441A 2002-09-19 2003-09-12 Soldering filler metal, assembly method for semiconductor device using same, and semiconductor device Expired - Fee Related CN100404193C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002273598A JP4147875B2 (en) 2002-09-19 2002-09-19 Brazing material, method of assembling semiconductor device using the same, and semiconductor device
JP273598/2002 2002-09-19

Publications (2)

Publication Number Publication Date
CN1681620A true CN1681620A (en) 2005-10-12
CN100404193C CN100404193C (en) 2008-07-23

Family

ID=32024961

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038219441A Expired - Fee Related CN100404193C (en) 2002-09-19 2003-09-12 Soldering filler metal, assembly method for semiconductor device using same, and semiconductor device

Country Status (7)

Country Link
EP (1) EP2099580A1 (en)
JP (1) JP4147875B2 (en)
KR (1) KR100595037B1 (en)
CN (1) CN100404193C (en)
AU (1) AU2003263597A1 (en)
TW (1) TWI231238B (en)
WO (1) WO2004026527A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009111932A1 (en) * 2008-03-13 2009-09-17 浙江省冶金研究院有限公司 Lead-free high-temperature electronic solder and preparing method thereof
CN105750757A (en) * 2016-03-22 2016-07-13 苏州虎伏新材料科技有限公司 Welding material for surfacing to obtain Sn-based babbitt alloy wear-resisting layer
CN106271181A (en) * 2015-05-13 2017-01-04 广西民族大学 A kind of Sn-Sb-X system high-temperature oxidation resistant lead-free brazing
CN108857136A (en) * 2017-05-11 2018-11-23 松下知识产权经营株式会社 Solder alloy and the bonded structure for using it

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012077228A1 (en) * 2010-12-10 2012-06-14 三菱電機株式会社 Lead-free solder alloy, semiconductor device, and method for manufacturing semiconductor device
JP5878290B2 (en) * 2010-12-14 2016-03-08 株式会社日本スペリア社 Lead-free solder alloy
JP5635561B2 (en) * 2012-06-21 2014-12-03 株式会社タムラ製作所 Solder composition
EP2940720B1 (en) * 2012-12-25 2021-04-14 Mitsubishi Materials Corporation Power module
JP6355091B1 (en) * 2017-03-07 2018-07-11 パナソニックＩｐマネジメント株式会社 Solder alloy and joint structure using the same
JP6998557B2 (en) 2017-09-29 2022-01-18 パナソニックＩｐマネジメント株式会社 Solder alloy and joint structure using it

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2059019A (en) * 1936-02-20 1936-10-27 Cleveland Graphite Bronze Co Bearing alloy
GB2181009B (en) * 1985-09-23 1989-11-29 Fluke Mfg Co John Apparatus and method for providing improved resistive ratio stability of a resistive divider network
JPH0825051B2 (en) * 1992-06-22 1996-03-13 株式会社日本スペリア社 Solder alloy
US5851482A (en) * 1996-03-22 1998-12-22 Korea Institute Of Machinery & Metals Tin-bismuth based lead-free solder for copper and copper alloys
US5837191A (en) * 1996-10-22 1998-11-17 Johnson Manufacturing Company Lead-free solder
US5833921A (en) * 1997-09-26 1998-11-10 Ford Motor Company Lead-free, low-temperature solder compositions
JP2001191196A (en) * 1999-10-29 2001-07-17 Topy Ind Ltd Sn BASE Pb-FREE SOLDER EXCELLENT IN WETTABILITY, HEAT CYCLE CHARACTERISTICS AND OXIDATION RESISTANCE
DE10145389C2 (en) * 2001-09-14 2003-07-24 Forschungsvereinigung Antriebs Plain bearing alloy based on Sn

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009111932A1 (en) * 2008-03-13 2009-09-17 浙江省冶金研究院有限公司 Lead-free high-temperature electronic solder and preparing method thereof
CN106271181A (en) * 2015-05-13 2017-01-04 广西民族大学 A kind of Sn-Sb-X system high-temperature oxidation resistant lead-free brazing
CN105750757A (en) * 2016-03-22 2016-07-13 苏州虎伏新材料科技有限公司 Welding material for surfacing to obtain Sn-based babbitt alloy wear-resisting layer
CN108857136A (en) * 2017-05-11 2018-11-23 松下知识产权经营株式会社 Solder alloy and the bonded structure for using it

Also Published As

Publication number Publication date
JP2004106027A (en) 2004-04-08
EP2099580A1 (en) 2009-09-16
WO2004026527A1 (en) 2004-04-01
JP4147875B2 (en) 2008-09-10
CN100404193C (en) 2008-07-23
KR20050057490A (en) 2005-06-16
TWI231238B (en) 2005-04-21
TW200406278A (en) 2004-05-01
AU2003263597A1 (en) 2004-04-08
KR100595037B1 (en) 2006-06-30

Similar Documents

Publication Publication Date Title
EP3062956B1 (en) Lead-free, silver-free solder alloys
CN1181948C (en) Non-Pb flux composition and welding product
JP3226213B2 (en) Solder material and electronic component using the same
CN1144649C (en) Lead-free solder
CN1190294C (en) Non-lead welding material and soldered fitting
WO2010047139A1 (en) Solder alloy and semiconductor device
Kanlayasiri et al. Property alterations of Sn-0.6 Cu-0.05 Ni-Ge lead-free solder by Ag, Bi, in and Sb addition
CN1754903A (en) Soldered material, semiconductor device, method of soldering, and method of manufacturing semiconductor device
WO2003046981A1 (en) Module structure and module comprising it
CN1681620A (en) Soldering filler metal, assembly method for semiconductor device using same, and semiconductor device
JPWO2013099849A1 (en) Sn-Cu lead-free solder alloy
JP2005503926A (en) Improved composition, method and device suitable for high temperature lead-free solders
GB2426251A (en) Sn-Sb-Ge solder alloy
JP5231727B2 (en) Joining method
CN1200316A (en) Solder and electronic elements utilizing same
JP2005052869A (en) Brazing material for high temperature soldering and semiconductor device using it
US7644855B2 (en) Brazing filler metal, assembly method for semiconductor device using same, and semiconductor device
JP6529632B1 (en) Semiconductor device using solder alloy, solder paste, molded solder, and solder alloy
JPH0133278B2 (en)
JP6887183B1 (en) Solder alloys and molded solders
US7816249B2 (en) Method for producing a semiconductor device using a solder alloy
JP2005177842A (en) Brazing material, manufacturing method of semiconductor device using the same and semiconductor device
JPH0422595A (en) Cream solder
TWI795778B (en) Lead-free solder alloy, solder ball, solder paste, and semiconductor device
TWI818752B (en) Solder alloys, solder balls, solder preforms, solder pastes and solder joints

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080723

Termination date: 20180912

CF01 Termination of patent right due to non-payment of annual fee