CN109570813B - 焊料合金和使用其的接合结构体 - Google Patents

焊料合金和使用其的接合结构体 Download PDF

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CN109570813B
CN109570813B CN201811120584.0A CN201811120584A CN109570813B CN 109570813 B CN109570813 B CN 109570813B CN 201811120584 A CN201811120584 A CN 201811120584A CN 109570813 B CN109570813 B CN 109570813B
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content
solder
alloy
solder alloy
layer
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CN109570813A (zh
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北浦秀敏
古泽彰男
日根清裕
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K31/00—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
    • B23K31/02—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to soldering or welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K33/00—Specially-profiled edge portions of workpieces for making soldering or welding connections; Filling the seams formed thereby
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract

本发明提供一种使焊料接合部的耐裂纹性提高、且实现高可靠性的焊料合金。焊料合金中，Sb的含有率为3wt％以上且15wt％以下，并且，Te的含有率为0.01wt％以上且1.5wt％以下，并且，选自Zn、Co、Cr中的至少1种元素的含有率为0.005wt％以上且1wt％以下，余量为Sn。

Description

焊料合金和使用其的接合结构体
技术领域
本发明涉及用于电源模块等的焊料合金和使用其的接合结构体。
背景技术
作为以往的焊料合金和使用其的接合结构体，例如专利文献1中记载了一种钎料和将使用该钎料组装的半导体装置与基板接合而成的接合结构体，所述钎料的特征在于，其包含5mass％以上且20mass％以下的Sb、0.01mass％以上且5mass％以下的Te，余量由Sn、任意的添加物和不可避免的杂质组成。
现有技术文献
专利文献
专利文献1：日本特许第4147875号公报
发明内容
发明要解决的问题
专利文献1记载的焊料合金中，通过向Sn中添加Te或Ag、Cu、Fe、Ni而使接合可靠性提高。
但是，尚未实现可耐受150℃以上的热循环试验的连接可靠性。因此，对于在高温下工作的电源模块等的连接可靠性而言，寻求实现充分的接合可靠性。
本发明是为了解决上述现有课题而进行的，其目的在于，提供使焊料接合部的耐裂纹性提高、且实现高可靠性的焊料合金。
用于解决问题的方法
为了解决上述课题，本发明所述的焊料合金中，Sb的含有率为3wt％以上且15wt％以下，并且
Te的含有率为0.01wt％以上且1.5wt％以下，并且
选自Zn、Co、Cr中的至少1种元素的含有率为0.005wt％以上且1wt％以下，余量为Sn。
本说明书中，“含有率”是指各元素的重量相对于焊料合金整体的重量的比例，使用wt％(重量百分比)的单位来表示。
本说明书中，“焊料合金”是指：只要是在其金属组成实质上由列举的金属构成的情况下，也可以包含不可避免地混入的微量金属(例如小于0.005wt％)。焊料合金可以具有任意的形态，例如可以单独用于焊接，或者与除了金属之外的其它成分(例如助焊剂等)一同用于焊接。
此外，本发明所述的接合结构体包含：
包含第一金属层的半导体元件；
包含第二金属层的电路基板；以及
将上述半导体元件的上述第一金属层与上述电路基板的上述第二金属层进行接合，在至少包含Sn、Sb和Te的同时还包含选自Zn、Co、Cr中的至少1种元素的焊料接合层，
在上述半导体元件的上述第一金属层与上述焊料接合层的界面、以及、上述电路基板的上述第二金属层与上述焊料接合层的界面包含SnNi合金或SnCu合金。
发明的效果
根据本发明所述的焊料合金，提供使焊料接合部的耐裂纹性提高、且实现高可靠性的焊料合金和使用其的接合结构体。
附图说明
图1是一个实施方式中的接合结构体的制造方法的说明图。
图2是一个实施方式中的接合结构体的制造方法的说明图。
具体实施方式
第一方案所述的焊料合金中，Sb的含有率为3wt％以上且15wt％以下，并且
Te的含有率为0.01wt％以上且1.5wt％以下，并且
选自Zn、Co、Cr中的至少1种元素的含有率为0.005wt％以上且1wt％以下，余量为Sn。
在上述构成的焊料合金中，通过在至少包含Te的同时，还添加选自Zn、Co、Cr中的至少1种元素，能够得到由Te的固溶带来的效果、以及在SnTe相中，离子半径与Sn不同的Zn、Co、Cr复杂地进行置换的效果。因此，在复杂地发生了元素置换的部位发生位错，高温下的伸长率提高。因而，与仅添加Te的SnSb系焊料相比，更高温下的伸长率提高，能够吸收在热循环时产生的反复应力。因此，在构成接合结构体时能够实现该接合结构体的高可靠性。
关于第二方案所述的焊料合金，在上述第一方案中，上述Zn、上述Co和上述Cr的元素的含有率的合计可以为0.005wt％以上且1wt％以下。
关于第三方案所述的焊料合金，在上述第二方案中，上述Zn的含有率可以为0.005wt％以上且1wt％以下。
关于第四方案所述的焊料合金，在上述第二方案中，上述Co的含有率可以为0.005wt％以上且1wt％以下。
关于第五方案所述的焊料合金，在上述第二方案中，上述Cr的含有率可以为0.005wt％以上且1wt％以下。
第六方案所述的接合结构体包含：包含第一金属层的半导体元件；包含第二金属层的电路基板；以及，将上述半导体元件的上述第一金属层与上述电路基板的上述第二金属层进行接合，在至少包含Sn、Sb和Te的同时还包含选自Zn、Co、Cr中的至少1种元素的焊料接合层，在上述半导体元件的上述第一金属层与上述焊料接合层的界面、以及、上述电路基板的上述第二金属层与上述焊料接合层的界面包含SnNi合金或SnCu合金。
根据上述构成的接合结构体，热循环中的耐裂纹性优异，具有高可靠性。
关于第七方案所述的接合结构体，在上述第六方案中，上述SnNi合金或SnCu合金可以包含选自Te、Zn、Co、Cr中的至少1种元素。
以下，针对实施方式所述的焊料合金和接合结构体，使用附图进行说明。需要说明的是，在附图中，针对实质上相同的部件标注相同的符号。
图1是一个实施方式中的接合结构体的制造方法的接合前的说明图。作为部件而准备半导体元件101、焊料合金105和电路基板106，制作接合结构体。图2是一个实施方式中的接合结构体的制造方法的接合后的说明图。如图1所示，通过设置所准备的各部件并加热，从而制作接合结构体201。
首先，焊料合金的部件的详情和制造方法如下所示。
<焊料合金105>
焊料合金105是包含Sb、Te和选自Zn、Co、Cr中的至少1元素，且余量为Sn的合金。
焊料合金105中的Sb的含有率为3wt％以上且15wt％以下。通过使焊料合金中的Sb的含有率处于这种范围，能够改善焊料接合部的热疲劳特性。
焊料合金105中的Te的含有率为0.01wt％以上且1.5wt％以下，选自Zn、Co、Cr中的至少1元素的含有率为0.005wt％以上且1wt％以下，余量为Sn。
本实施方式所述的焊料合金中，在至少包含Te的同时，以具有规定含有率的方式添加有选自Zn、Co、Cr中的至少1种元素。因此，在高温下，Sn和与其离子半径不同的Te发生置换，且在SnTe相中，Zn、Co、Cr中的至少1种元素复杂地发生置换，并产生位错，由此发生高温下的伸长率的提高。因此，本实施方式所述的焊料合金与仅添加Te的SnSb系焊料相比，具有高温下的更优异的伸长率。因此，能够吸收在热循环时产生的反复应力，提高耐裂纹性，因而能够实现接合结构体的高可靠性。
焊料合金105的大小根据所制造的接合结构体而可以是各种大小，可以使用例如10mm见方并且具有0.05mm以上且0.5mm以下的厚度的焊料合金105。通过使焊料合金105的厚度为0.5mm以下，所形成的焊料接合部的热阻不会变高，能够高效地逸散半导体元件101的热。通过使焊料合金105的厚度为0.05mm以上，能够抑制焊料接合时的孔隙的发生，能够降低焊料接合部的热阻。
接着，针对实施方式所述的接合结构体，使用附图进行说明。
实施方式所述的接合结构体包含：包含金属化层(第一金属层)104的半导体元件101、包含镀层(第二金属层)108的电路基板106、以及将半导体元件101的金属化层104与电路基板106的镀层108进行接合的焊料接合层203。焊料接合层203在至少包含Sn、Sb和Te的同时，还包含选自Zn、Co、Cr中的至少1种元素。此外，在半导体元件101的金属化层104与焊料接合层203的界面、以及、电路基板106的镀层108与焊料接合层203的界面包含SnNi合金或SnCu合金。
<半导体元件101>
半导体元件101包含：硅芯片102、形成于硅芯片102的下表面的欧姆层103、以及形成于欧姆层103的下表面的金属化层(第一金属层)104。
关于硅芯片102，出于制造容易性的观点，优选的是，纵向长度为10mm、横向长度为10mm，且具有0.2mm的厚度，但不限定于此，可以具有各种尺寸。
半导体元件101的欧姆层103是包含任意的纯金属或合金的层，例如可以使用Ti、Al、Cr、Ni、或者包含这些金属的合金等，但不限定于它们。通过在欧姆层中使用上述金属，能够得到适合的电阻接合。欧姆层103的厚度没有特别限定，例如可以为0.05μm以上且0.5μm以下，例如可以为0.1μm。通过使欧姆层103具有这样的厚度，容易确保电阻值和接合可靠性。
半导体元件101的金属化层(第一金属层)104是包含任意的纯金属或合金的层，例如可以使用Ni、Cu或者包含这些金属的合金等，但不限定于它们。金属化层104的厚度没有特别限定，例如可以为0.5μm以上且10μm以下，例如可以为1μm。通过使金属化层104具有这样的厚度，能够使其与焊料合金牢固地接合。
<电路基板106>
电路基板106包含：引线框107和形成于引线框107的表面的镀层(第二金属层)108。
电路基板106的引线框107的材料可以使用金属或陶瓷等导热性良好的材料。作为引线框107的材料，例如可以使用铜、铝、氧化铝、氮化铝、氮化硅等，但不限定于它们。关于引线框107，出于制造容易性的观点，优选的是，纵向长度为20mm、横向长度为20mm，且具有1mm的厚度，但不限定于此，可以具有各种尺寸。
电路基板106的镀层(第二金属层)108是包含任意的纯金属或合金的层，例如可以使用Ni、Cu或者包含这些金属的合金等，但不限定于它们。镀层的厚度没有特别限定，例如可以为0.5μm以上且10μm以下，例如可以为1μm。通过使镀层具有这样的厚度，能够使其与焊料合金牢固地接合。
<接合结构体201>
使用本实施方式所述的焊料合金制造的接合结构体201在图2中用示意图表示。接合结构体201具有经由合金层202和焊料接合层203将半导体元件101与电路基板106进行接合而得到的结构。
接合结构体201可按照以下方式制造。
(1)首先，如图1所示，将焊料合金105承载在电路基板106的镀层(第二金属层)108上，进而，以焊料合金105与半导体元件101的金属化层(第一金属层)104接触的方式，在焊料合金105上设置半导体元件101。
(2)接着，一边使温度每分钟上升10℃，一边进行从室温至300℃为止的加热，在300℃保持1分钟后，一边使温度每分钟降低10℃，一边进行从300℃至室温为止的冷却。
通过以上操作，能够在焊料合金105与金属化层104之间、以及焊料合金105与镀层108之间形成合金层202，制造图2所示那样的接合结构体201。
接合结构体201的合金层202是在上述那样的接合结构体的制造过程中形成的金属间化合物。金属化层104和镀层108为Ni或Cu时，合金层202中包含SnNi合金或SnCu合金。通过在金属化层104与焊料接合层203之间、以及电路基板的镀层108与焊料接合层203之间的合金层202中形成SnNi合金或SnCu合金，金属化层104与焊料接合层203、以及电路基板的镀层108与焊料接合层203经由金属进行接合，能够得到良好的接合强度。
合金层202可包含的SnNi合金和SnCu合金中，可以包含选自Te、Zn、Co、Cr中的至少1种元素。通过包含选自Te、Zn、Co、Cr中的至少1种元素，合金层202成为多元合金，合金的强度提高，在热循环等中施加有应力时也能够抑制合金层202中产生裂纹。
接合结构体201的焊料接合层203包含焊料合金105中包含的Sb、Te，并且包含Zn、Co、Cr中的至少1种金属元素，与接合前的焊料合金105具有大致等同的组成，焊料接合层203中，在形成合金层202时，Sn含有率降低了Sn发生反应的相应的量。
实施例
实施例1、比较例2中，可推测：对于热循环时产生的反复应力，可通过焊料合金在高温下的伸长率来吸收应力，确认了焊料合金的伸长率。
接着，实施例2～实施例5和比较例2～5中，为了确认在实施例1中已经确认的焊料合金在高温下的伸长率的提高会抑制热循环时产生的焊料合金的裂纹，用与实际的电源模块接近的安装结构体的形状进行评价。此处，为了验证能够提高耐裂纹性的焊料合金组成，使各元素的添加量发生变化。
(实施例1)
如表1所示，改变Sb含有率、Te含有率、Zn含有率、Co含有率、Cr含有率，将余量设为Sn，准备多个焊料合金105，在200℃的气氛温度进行了拉伸试验。
<评价>
为了进行拉伸试验，制作了将焊料合金浇铸成哑铃形状而得到的评价样品。评价样品的形状如下设定：拉伸试验中固定的部分为直径6mm、长度20mm、哑铃的缩颈部分为直径3mm、长度20mm。将拉伸试验机的上下样品固定夹具的间隔设定为20mm，并固定评价样品，将气氛温度设为200℃后，以仅对评价样品施加轴向的力的方式用拉伸试验机拉伸评价样品，从而进行评价样品的拉伸试验。
评价样品的伸长率(％)是指：拉伸试验中评价样品发生断裂时的固定夹具的间隔的增加量相对于试验前的固定夹具的间隔20mm的比例。例如，评价样品发生断裂时的固定夹具的间隔为40mm时，伸长率为(40-20)/20×100＝100(％)。
为了使热循环试验的温度从150℃上升至175℃，温度上升达到约1.2倍，伸长率的比例也将1.2倍以上设定为合格基准。
将拉伸试验中的伸长率(％)的测定结果一并示于表1。
[表1]
Figure BDA0001809631750000091
关于拉伸试验的结果，实施例1-1中，Sb含有率为3wt％、Te含有率为0.01wt％、Zn含有率为0.005wt％，且伸长率为122％；实施例1-2中，Sb含有率为15wt％、Te含有率为0.01wt％、Zn含有率为0.005wt％，且伸长率为120％。
它们与不含Zn的比较例1-1中的87％的伸长率、比较例1-2中的90％的伸长率相比是良好的结果。
同样地，实施例1-3中，Sb含有率为3wt％、Te含有率为0.01wt％、Co含有率为0.005wt％，且伸长率为123％；实施例1-4中，Sb含有率为15wt％、Te含有率为0.01wt％、Co含有率为0.005wt％，且伸长率为119％。
此外，实施例1-5中，Sb含有率为3wt％、Te含有率为0.01wt％、Cr含有率为0.005wt％，且伸长率为118％；实施例1-6中，Sb含有率为15wt％、Te含有率为0.01wt％、Cr含有率为0.005wt％，且伸长率为115％。
进而，实施例1-7中，Sb含有率为3wt％、Te含有率为0.01wt％、Zn含有率为0.005wt％、Co含有率为0.005wt％、Cr含有率为0.005wt％，且伸长率为124％；实施例1-8中，Sb含有率为15wt％、Te含有率为0.01wt％、Zn含有率为0.005wt％、Co含有率为0.005wt％、Cr含有率为0.005wt％，且伸长率为126％。
它们与不含Zn、Co、Cr且使Te含量增加的比较例1-3的89％、比较例1-4的91％相比是良好的结果。
<结果>
根据上述结果，实施例1-1～1-6中，相对于比较例中的伸长率的值最大的比较例1-4的91％，能够得到1.2倍的109％以上的伸长率，因而满足合格基准。
由此可明确：通过向Sn中不仅添加Sb和Te，并且添加选自Zn、Co、Cr中的至少一种元素，高温下的伸长率有效提高。通过添加Te和选自Zn、Co、Cr中的至少一种元素，发生Te向Sn相中的固溶以及由此发生的Zn、Co、Cr中的至少一种元素向SnTe相中的固溶。因此可以认为：与仅添加Te的SnSb系焊料相比，高温下的伸长率进一步提高。由此，能够吸收热循环时产生的反复应力，能够实现接合结构体的高可靠性。
(实施例2)
接合结构体的实施例2-1～2-36使用焊料合金105的组成是Sb含有率为3wt％以上且15wt％以下、Te含有率为0.01wt％以上且1.5wt％以下、Zn含有率为0.005wt％以上且1wt％以下、以及余量为Sn的合金来制作。
实施例2中，验证了在实施例1中已经确认的焊料合金的高温伸长率的提高在与实际的电源模块接近的安装结构体中会实现高可靠性。此外，变更作为各添加元素的Sb、Te、Zn的含量，来确认表现出效果的元素范围。
Sb含有率设为能够基于SnSb化合物而得到析出强化效果的添加量。对于Te和Zn的添加量而言，将固溶于焊料合金而能够得到固溶强化效果的最小量和不超过固溶限度而析出的最大量作为添加量，实施热循环试验。在各个组成范围中，能够实现析出强化和固溶强化这两者的组织强化。此外，实施例3～5中，也利用相同的组成范围进行了验证。
首先，准备焊料合金105、半导体元件101和电路基板106。对于半导体元件101准备如下元件：在纵向长度为10mm、横向长度为10mm、且具有0.2mm厚度的硅芯片102的下表面设置包含Ti的欧姆层103，进而在包含Ti的欧姆层103的下表面设置包含Ni的金属化层104而得到的元件。对于电路基板106准备如下基板：具有包含铜的引线框且在引线框107的表面设置具有1μm厚度的包含Ni的镀层108而得到的基板，所述引线框的纵向长度为20mm、横向长度为20mm，且具有1mm的厚度。
接着，在所准备的电路基板106的包含Ni的镀层108上载置具有0.1mm厚度的焊料合金105，进而以焊料合金105与包含Ni的金属化层104接触的方式，在焊料合金105上设置半导体元件101，一边使温度每分钟上升10℃，一边进行从室温至300℃为止的加热。在300℃保持1分钟后，一边使温度每分钟降低10℃，一边进行从300℃至室温为止的冷却，由此制造接合结构体201。
(比较例2)
比较例2-1和比较例2-2使用焊料合金的组成是Sb含有率为7wt％、Te含有率为0.01wt％以上且1.5wt％以下、余量为Sn的合金来制作。
比较例2-3～比较例2-12使用焊料合金的组成是Sb含有率为2wt％和16wt％、Te含有率为0.01wt％以上且1.5wt％以下、Zn含有率为0.005wt％以上且1wt％以下、以及余量为Sn的合金来制作。
<评价>
所制作的实施例2-1～2-36和比较例2-1～2-12的接合结构体用半导体用密封树脂实施塑模后，进行热循环试验，进行耐裂纹性的评价。热循环试验使用液槽试验槽，以-40℃、175℃各5分钟作为1个循环，进行500个循环。用超声波显微镜来观察试验后的样品，用剥离面积除以接合面积来算出裂纹率。若裂纹率为25％以上，则不会使硅芯片的放热有效地逸散至引线框，因此，将25％以上记作×，将小于25％～10％以上记作○，将小于10％记作◎。
将各焊料合金组成和热循环试验后的裂纹率和判定结果一并示于表2。
[表2]
Figure BDA0001809631750000131
如表2所示，实施例2-1～2-36的Sb含有率为3wt％以上且15wt％以下、Te含有率为0.01wt％以上且1.5wt％以下、Zn含有率为0.005wt％以上且1wt％以下时，裂纹率小于25％，能够得到良好的结果。
进而，如实施例2-2、2-3、2-6、2-7、2-14、2-15、2-18、2-19、2-26、2-27、2-30、2-31所示，Sb含有率为3wt％以上且15wt％以下、Te含有率为0.05wt％以上且0.5wt％以下、Zn含有率为0.005wt％以上且0.1wt％以下时，裂纹率小于10％，得到非常良好的结果。
另一方面，如比较例2-1、2-2所示，Zn含有率为0wt％时，裂纹率达到34％、31％，判定为×。
如比较例2-3所示，Zn含有率为1.5wt％时，裂纹率达到29％，判定为×。
如比较例2-4所示，Zn含有率为0.001wt％时，裂纹率达到25％，判定为×。
如比较例2-5～2-12那样，Sb含有率为2wt％、16wt％时，裂纹率也达到25％以上，判定为×。
<研究>
在SnSb系焊料的情况下，通过形成SnSb化合物，并分散在焊料中，焊料的可靠性因分散强化而提高。如实施例2-1～2-36这样，可推测：通过在Sn中含有Sb、Te和Zn，SbSn化合物微细地分散，此外，Te和Zn固溶在Sn中，由此发生位错，高温下的伸长率提高。
如比较例2-1、2-2所示，不添加Zn而仅添加Te时，与添加了Zn和Te的情况相比，可靠性降低。可推测这是因为：与在Sn中固溶有离子半径不同的两种元素的情况相比，位错少，因此，高温伸长率不会提高，实现不了可靠性的提高。
如比较例2-3所示，可推测：Zn含有率为1.5wt％时，Zn含有率多，因此，未完全固溶于Sn而使Zn合金析出，实现不了可靠性的提高。
另一方面，如比较例2-4所示，可推测：Zn含有率为0.001wt％时，Zn含有率少，得不到添加Zn的效果。
如比较例2-5～2-8所示，Sb含有率为2wt％时，即使添加Te和Zn，热循环的判定也是×。可推测这是因为：SnSb化合物少，分散强化的效果低。
如比较例2-9～2-12所示，Sb含有率为16wt％时，即使添加Te和Zn，热循环的判定也是×。可推测这是因为：Sb超过15wt％时，因SnSb化合物的析出而强度提高，但焊料合金的延性降低，因此，耐裂纹性降低。
根据这些结果可知：Sb含有率为3wt％以上且15wt％以下、Te含有率为0.01wt％以上且1.5wt％以下、Zn含有率为0.005wt％以上且1wt％以下时，可靠性提高。
进而，Sb含有率为3wt％以上且15wt％以下、Te含有率为0.05wt％以上且0.5wt％以下、Zn含有率为0.005wt％以上且0.1wt％以下时，裂纹率小于10％，能够得到非常良好的结果。
(实施例3、4)
实施例2中，验证了在实施例1中已经确认的焊料合金的高温伸长率的提高在与实际的电源模块接近的安装结构体中会实现高可靠性。此外，变更作为各添加元素的Sb、Te、Co或Cr的含量来确认表现出效果的元素范围。
实施例3中，将实施例2的Zn变更为Co，实施例4中，将实施例2的Zn变更为Cr，除此之外，利用与实施例2相同的条件来实施接合结构体的制作和热循环试验。
(比较例3、4)
比较例3中，将比较例2的Zn变更为Co，比较例4中，将比较例2的Zn变更为Cr，利用与比较例2相同的条件来实施接合结构体的制作和热循环试验。
将各焊料合金组成和热循环试验后的裂纹率和判定结果一并示于表3、表4。
[表3]
Figure BDA0001809631750000161
[表4]
Figure BDA0001809631750000171
作为结果可知：与实施例2同样地，实施例3中，Sb含有率为3wt％以上且15wt％以下、Te含有率为0.01wt％以上且1.5wt％以下、Co含有率为0.005wt％以上且1wt％以下时，可靠性提高。
进而，Sb含有率为3wt％以上且15wt％以下、Te含有率为0.05wt％以上且0.5wt％以下、Co含有率为0.005wt％以上且0.1wt％以下时，裂纹率小于10％，能够得到非常良好的结果。
可知：实施例4中，Sb含有率为3wt％以上且15wt％以下、Te含有率为0.01wt％以上且1.5wt％以下、Cr含有率为0.005wt％以上且1wt％以下时，可靠性提高。
进而，Sb含有率为3wt％以上且15wt％以下、Te含有率为0.05wt％以上且0.5wt％以下、Cr含有率为0.005wt％以上且0.1wt％以下时，裂纹率小于10％，能够得到非常良好的结果。
像这样可确认：通过在添加元素中使用Zn、Co、Cr，可靠性提高。
(实施例5)
实施例5中，验证了在实施例1中已经确认的焊料合金的高温伸长率的提高在与实际的电源模块接近的安装结构体中会实现高可靠性。此外，添加作为各添加元素的Sb、Te、Zn、Co、Cr中的全部，变更含量来确认表现出效果的元素范围。实施例5中，根据实施例2～实施例4中得到的结果，使Zn、Co、Cr的总添加量达到0.005wt％以上且1wt％以下，以包含实施例1中进行的组成范围的方式决定元素的上下限组成，并进行验证。
(比较例5)
比较例5中，变更为不仅如比较例2所示那样添加Zn还添加Co、Cr的焊料合金，利用与比较例2相同的条件来实施接合结构体的制作和热循环试验。
将各焊料合金组成和热循环试验后的裂纹率和判定结果一并示于表5。
[表5]
Figure BDA0001809631750000191
作为结果，如实施例5-1～5-8所示，Sb含有率为3wt％以上且15wt％以下、Te含有率为0.01wt％以上且1.5wt％以下、Zn、Co、Cr含量的总量为0.005wt％以上且1wt％以下时，裂纹率达到25％以下且10％以上，判定为○。
另一方面，如比较例5-1～5-8所示，Sb含量为2wt％、16wt％时，即使Te含量为0.01wt％以上且1.5wt％以下，并且含有Zn、Co、Cr，裂纹率也达到25％以上，判定为×。
可推测：Sb含有率为2wt％时，SnSb化合物少，分散强化的效果低。可推测：Sb含有率为16wt％时，因SnSb化合物的析出而强度提高，但焊料合金的延性降低，因此，耐裂纹性降低。
根据实施例1～3的结果可知：Sb含有率为3wt％以上且15wt％以下、Te含有率为0.01wt％以上且1.5wt％以下、Zn、Co、Cr中的任一种元素的含有率为0.005wt％以上且1wt％以下、余量为Sn时，可靠性提高。
需要说明的是，本申请中包括将上述的各种实施方式和/或实施例之中的任意实施方式和/或实施例适当组合而成的方案，可发挥出各个实施方式和/或实施例所具有的效果。
产业上的可利用性
根据本发明所述的焊料合金和接合结构体，高温下的伸长率得以改善，接合结构体的耐裂纹性提高，因此，能够应用于电源模块等半导体元件的接合用途。
附图标记说明
101 半导体元件
102 硅芯片
103 欧姆层
104 金属化层(第一金属层)
105 焊料合金
106 电路基板
107 引线框
108 镀层(第二金属层)
201 接合结构体
202 合金层
203 焊料接合层

Claims (7)

1.一种焊料合金，其中，Sb的含有率为3wt％以上且15wt％以下，并且
Te的含有率为0.01wt％以上且1.5wt％以下，并且
选自Zn、Co、Cr中的至少1种元素的含有率为0.005wt％以上且1wt％以下，余量为Sn，
Zn、Co、Cr中的至少一种元素向SnTe相中固溶，
焊料合金的伸长率为109％以上。
2.根据权利要求1所述的焊料合金，其中，所述Zn、所述Co和所述Cr的元素的含有率的合计为0.005wt％以上且1wt％以下。
3.根据权利要求2所述的焊料合金，其中，所述Zn的含有率为0.005wt％以上且1wt％以下。
4.根据权利要求2所述的焊料合金，其中，所述Co的含有率为0.005wt％以上且1wt％以下。
5.根据权利要求2所述的焊料合金，其中，所述Cr的含有率为0.005wt％以上且1wt％以下。
6.一种接合结构体，其包含：
包含第一金属层的半导体元件；
包含第二金属层的电路基板；以及
将所述半导体元件的所述第一金属层与所述电路基板的所述第二金属层进行接合，在包含Sn、Sb和Te的同时还包含选自Zn、Co、Cr中的至少1种元素的焊料接合层，
所述焊料接合层由权利要求1所述的焊料合金形成，
在所述半导体元件的所述第一金属层与所述焊料接合层的界面、以及、所述电路基板的所述第二金属层与所述焊料接合层的界面包含SnNi合金或SnCu合金。
7.根据权利要求6所述的接合结构体，其中，所述SnNi合金或SnCu合金包含选自Te、Zn、Co、Cr中的至少1种元素。
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CN113182726A (zh) * 2021-04-07 2021-07-30 河南鸿昌电子有限公司 一种焊接半导体所用的焊锡和焊锡的使用方法
EP4140635A1 (en) * 2021-08-31 2023-03-01 Infineon Technologies AG Semiconductor device with a ni comprising layer and method for fabricating the same

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1110203A (zh) * 1993-11-09 1995-10-18 松下电器产业株式会社 钎料
WO2004026527A1 (en) * 2002-09-19 2004-04-01 Sumitomo Metal Mining Co., Ltd. Soldering filler metal, assembly method for semiconductor device using same, and semiconductor device
WO2012086745A1 (ja) * 2010-12-24 2012-06-28 株式会社村田製作所 接合方法、接合構造、電子装置、電子装置の製造方法、および電子部品
CN102581507A (zh) * 2012-01-19 2012-07-18 广东中实金属有限公司 一种锡锌铋多元共晶无铅钎料及制备方法
JP2014057974A (ja) * 2012-09-14 2014-04-03 Senju Metal Ind Co Ltd はんだ合金
CN103796788A (zh) * 2011-09-16 2014-05-14 株式会社村田制作所 导电性材料、使用该导电性材料的连接方法和连接结构物
EP3127652A1 (en) * 2014-04-02 2017-02-08 Senju Metal Industry Co., Ltd Solder alloy for led, and led module
WO2017164194A1 (ja) * 2016-03-22 2017-09-28 株式会社タムラ製作所 鉛フリーはんだ合金、フラックス組成物、ソルダペースト組成物、電子回路基板および電子制御装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1461371A (en) * 1975-02-19 1977-01-13 Glacier Metal Co Ltd Bearing alloys
DE2818099C2 (de) * 1978-04-25 1986-02-20 Fürstlich Hohenzollernsche Hüttenverwaltung Laucherthal, 7480 Sigmaringen Weißmetall-Legierung und deren Verwendung
GB8324353D0 (en) * 1983-09-12 1983-10-12 Darchem Ltd Materials
US5851482A (en) * 1996-03-22 1998-12-22 Korea Institute Of Machinery & Metals Tin-bismuth based lead-free solder for copper and copper alloys
JP3306007B2 (ja) * 1998-06-30 2002-07-24 株式会社東芝 ハンダ材
JP2002368293A (ja) 2001-06-05 2002-12-20 Aisin Seiki Co Ltd 熱電モジュール、熱電モジュールの製造方法、熱電装置、ファイバ投光装置
JPWO2003021664A1 (ja) 2001-08-31 2005-07-07 株式会社日立製作所 半導体装置、構造体及び電子装置
JP2004165342A (ja) * 2002-11-12 2004-06-10 Sumitomo Metal Mining Co Ltd ハーメチックシール方法および半導体装置
TW201210733A (en) 2010-08-26 2012-03-16 Dynajoin Corp Variable melting point solders
EP2641689B1 (en) * 2010-11-19 2016-06-29 Murata Manufacturing Co., Ltd. Electroconductive material, method of connection with same, and connected structure
JP5594324B2 (ja) * 2012-06-22 2014-09-24 株式会社村田製作所 電子部品モジュールの製造方法
JP2017508622A (ja) * 2013-12-31 2017-03-30 アルファ・メタルズ・インコーポレイテッドAlpha Metals, Inc. ロジンフリー熱硬化性フラックス配合物
WO2016059744A1 (ja) * 2014-10-17 2016-04-21 富士電機株式会社 鉛フリー半田付け方法及び半田付け物品
WO2016179358A1 (en) * 2015-05-05 2016-11-10 Indium Corporation High reliability lead-free solder alloys for harsh environment electronics applications

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1110203A (zh) * 1993-11-09 1995-10-18 松下电器产业株式会社 钎料
WO2004026527A1 (en) * 2002-09-19 2004-04-01 Sumitomo Metal Mining Co., Ltd. Soldering filler metal, assembly method for semiconductor device using same, and semiconductor device
WO2012086745A1 (ja) * 2010-12-24 2012-06-28 株式会社村田製作所 接合方法、接合構造、電子装置、電子装置の製造方法、および電子部品
CN103796788A (zh) * 2011-09-16 2014-05-14 株式会社村田制作所 导电性材料、使用该导电性材料的连接方法和连接结构物
CN102581507A (zh) * 2012-01-19 2012-07-18 广东中实金属有限公司 一种锡锌铋多元共晶无铅钎料及制备方法
JP2014057974A (ja) * 2012-09-14 2014-04-03 Senju Metal Ind Co Ltd はんだ合金
EP3127652A1 (en) * 2014-04-02 2017-02-08 Senju Metal Industry Co., Ltd Solder alloy for led, and led module
WO2017164194A1 (ja) * 2016-03-22 2017-09-28 株式会社タムラ製作所 鉛フリーはんだ合金、フラックス組成物、ソルダペースト組成物、電子回路基板および電子制御装置

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EP3461580A1 (en) 2019-04-03
US11135683B2 (en) 2021-10-05
CN109570813A (zh) 2019-04-05
US20190099840A1 (en) 2019-04-04
JP6998557B2 (ja) 2022-01-18
EP3461580B1 (en) 2023-02-08

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