EP2004374A1 - Vorrichtung zum brechen von halbleiterscheiben oder ähnlichen substraten - Google Patents
Vorrichtung zum brechen von halbleiterscheiben oder ähnlichen substratenInfo
- Publication number
- EP2004374A1 EP2004374A1 EP07723840A EP07723840A EP2004374A1 EP 2004374 A1 EP2004374 A1 EP 2004374A1 EP 07723840 A EP07723840 A EP 07723840A EP 07723840 A EP07723840 A EP 07723840A EP 2004374 A1 EP2004374 A1 EP 2004374A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- counter
- semiconductor wafer
- predetermined breaking
- holders
- breaking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
- B28D5/0023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rectilinearly
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0052—Means for supporting or holding work during breaking
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
- C03B33/023—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
- C03B33/033—Apparatus for opening score lines in glass sheets
Definitions
- the invention relates to a device for breaking semiconductor wafers or wafers as well as ceramic and glass panes or similar substrates according to the features of the preamble of claim 1.
- wafer In the semiconductor industry and microelectronics, a wafer (English: “wafer”) refers to a circular, a few 100 ⁇ m thick disk on which electronic components, in particular integrated circuits (IC, "chip”) or micromechanical components, are produced by various technical processes ,
- This disk is mostly made of monocrystalline silicon, but other materials such as silicon carbide, gallium arsenide and indium phosphide are also used. In microsystem technology, glass wafers with a thickness in the 1 mm range are also used.
- the discs are made in different diameters.
- the currently used mainly wafer diameter differ depending on the semiconductor material and intended use and are for silicon z. B. at 150 mm, 200 mm, 300 mm and in the future also at 450 mm, for gallium arsenide at 2 inches, 3 inches, 100 mm, 125 mm or 150 mm.
- the larger the wafer the more integrated circuits, also called chips, can be accommodated on it. As the geometrical waste becomes smaller for larger wafers, the integrated circuits can be produced more cheaply.
- the surfaces of the wafers must be optically mirror-polished. With regard to the flatness of the wafers, the perfection of the polish and the purity of the surface, extreme demands apply. For example, only unevenness of a few nm over the entire wafer surface is permissible.
- the wafers are labeled with so-called fats. It is indicated with the help of a primary and possibly a secondary Fiat, which angular orientation is present and which crystal orientation has the surface. In recent times, instead of the Fiat notches, so-called notches used. They offer the advantage of better positioning and, above all, less waste.
- the semiconductor wafers are first subdivided into individual strips with the aid of already known methods and devices.
- the respective dividing lines are marked in advance by means of a diamond stylus on the upper side of the semiconductor wafer by notched notches accordingly.
- a pulse rod then presses on the predetermined break line prepared so far from the underside against the semiconductor disk, the upper side of which is supported on an anvil. Since in the known device impulse rod and anvil are arranged directly above one another, the pressure exerted by the impulse rod pressure on the one hand must be sufficiently large on the one hand to trigger a controlled separation process against the pressure of the anvil. On the other hand, the pressure must not be too low, because otherwise there is a danger that sufficient and complete separation can not be achieved. It therefore requires a high precision in terms of contact pressure in order to ensure the lowest possible separation error rate.
- the present invention is therefore an object of the invention to improve a device of the type mentioned so that a simpler and safer separation can be achieved while at the same time the lowest possible error rate.
- the device instead of only one single counter-holder, the device has two counter-holders which are each supported next to the predetermined breaking point, so that only a relatively low pressure has to be built up in the region of the separating point by means of the crushing wedge in order to ensure reliable separation.
- FIG. 1 shows the basic structure of an inventively designed device for dividing a semiconductor wafer into individual subregions.
- an annular holder 2 is used, on which the semiconductor wafer 1 fastened on a flexible base is fixed to the edge regions. This is preferably done by generating a negative pressure over a plurality of suction nozzles.
- a predetermined breaking line which is marked in advance by a notched at the top notch 3, is aligned in alignment with the predetermined breaking line Brechkeil 4, which presses against the underside of the semiconductor wafer 1.
- two counter-holders 5,6 are provided, which are supported on both sides of the notch 3 marked by the predetermined breaking line at the top of the semiconductor wafer and build up a back pressure at the moment of the separation process triggered by the breaking wedge 4.
- the two counter-holders 5, 6 are independently adjustable both horizontally and vertically and are preferably positionable by motor.
- the separate controllability of the two counter holders 5, 6 has the advantage that they can be individually positioned in adaptation to different height profiles. Vorzugswei-
- the two counter-holders 5, 6 are positioned mirror-symmetrically with respect to the predetermined breaking line and, for example, in the region of adjacent predetermined breaking points.
- the device is advantageously not only suitable for the processing of semiconductor wafers, but also for ceramic and glass wafers or similar substrates usable, in which case, deviate from the usual in semiconductor wafers circular cross-section, any other cross-sections, in particular rectangular cross-sections are common.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Dicing (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200610015142 DE102006015142B4 (de) | 2006-03-31 | 2006-03-31 | Vorrichtung zum Brechen von Halbleiterscheiben |
PCT/EP2007/002899 WO2007112983A1 (de) | 2006-03-31 | 2007-03-30 | Vorrichtung zum brechen von halbleiterscheiben oder ähnlichen substraten |
Publications (1)
Publication Number | Publication Date |
---|---|
EP2004374A1 true EP2004374A1 (de) | 2008-12-24 |
Family
ID=38039683
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP07723840A Withdrawn EP2004374A1 (de) | 2006-03-31 | 2007-03-30 | Vorrichtung zum brechen von halbleiterscheiben oder ähnlichen substraten |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP2004374A1 (de) |
DE (1) | DE102006015142B4 (de) |
WO (1) | WO2007112983A1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008031619A1 (de) | 2008-07-07 | 2010-01-14 | Dyntest Technologies Gmbh | Verfahren und Vorrichtung zum Brechen von Halbleiterscheiben oder ähnlichen Substraten |
JP2011125105A (ja) * | 2009-12-09 | 2011-06-23 | Toyota Motor Corp | 割断磁石を備えたモータとその製造方法 |
KR20150021575A (ko) * | 2011-01-07 | 2015-03-02 | 반도키코 가부시키가이샤 | 탄화 규소판의 스크라이브 방법 및 스크라이브 장치 |
JP5983412B2 (ja) * | 2011-11-16 | 2016-08-31 | 日本電気硝子株式会社 | 板ガラス割断装置、板ガラス割断方法、板ガラス作製方法、および、板ガラス割断システム |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3396452A (en) * | 1965-06-02 | 1968-08-13 | Nippon Electric Co | Method and apparatus for breaking a semiconductor wafer into elementary pieces |
DD250609A1 (de) * | 1986-06-30 | 1987-10-14 | Elektronische Bauelemente Veb | Verfahren und einrichtung zum formgerechten trennen beschichteter keramikflachsubstrate |
DE4029973A1 (de) * | 1990-09-21 | 1992-03-26 | Siemens Ag | Brecheinrichtung zum vereinzeln von angesaegten und/oder angeritzten halbleiterwafern zu chips |
JPH0629388A (ja) * | 1992-07-07 | 1994-02-04 | Hitachi Ltd | ウエーハブレーキング・分離方法及びその実施装置 |
DE69534098T2 (de) * | 1994-01-18 | 2006-02-09 | Dynatex International (Inc.), Santa Rosa | Verfahren und vorrichtung zum anritzen und/oder brechen von halbleiterplättchen |
FR2749794B1 (fr) * | 1996-06-13 | 1998-07-31 | Charil Josette | Dispositif de clivage d'une plaque de materiau semi-conducteur |
JP3427796B2 (ja) * | 1999-09-30 | 2003-07-22 | 株式会社村田製作所 | 積層セラミック部品の製造方法及びセラミック積層体の切断装置 |
CN1259264C (zh) * | 2001-06-28 | 2006-06-14 | 三星钻石工业股份有限公司 | 脆性材料基板的破断装置及其破断方法以及具有该装置的母贴合基板的分断系统 |
DE10314179A1 (de) * | 2003-03-17 | 2004-10-07 | Baumann Gmbh | Brechvorrichtung für das Vereinzeln von Keramikleiterplatten |
JP4590174B2 (ja) * | 2003-09-11 | 2010-12-01 | 株式会社ディスコ | ウエーハの加工方法 |
-
2006
- 2006-03-31 DE DE200610015142 patent/DE102006015142B4/de not_active Expired - Fee Related
-
2007
- 2007-03-30 WO PCT/EP2007/002899 patent/WO2007112983A1/de active Application Filing
- 2007-03-30 EP EP07723840A patent/EP2004374A1/de not_active Withdrawn
Non-Patent Citations (1)
Title |
---|
See references of WO2007112983A1 * |
Also Published As
Publication number | Publication date |
---|---|
DE102006015142B4 (de) | 2014-02-20 |
DE102006015142A1 (de) | 2007-10-04 |
WO2007112983A1 (de) | 2007-10-11 |
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Legal Events
Date | Code | Title | Description |
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
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17P | Request for examination filed |
Effective date: 20081031 |
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RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: ASYS AUTOMATISIERUNGSSYSTEME GMBH |
|
DAX | Request for extension of the european patent (deleted) | ||
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
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INTG | Intention to grant announced |
Effective date: 20131122 |
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STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
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18D | Application deemed to be withdrawn |
Effective date: 20140403 |