EP1589329A4 - Halbleiterdrucksensor und prozess zu seiner herstellung - Google Patents

Halbleiterdrucksensor und prozess zu seiner herstellung

Info

Publication number
EP1589329A4
EP1589329A4 EP04706349A EP04706349A EP1589329A4 EP 1589329 A4 EP1589329 A4 EP 1589329A4 EP 04706349 A EP04706349 A EP 04706349A EP 04706349 A EP04706349 A EP 04706349A EP 1589329 A4 EP1589329 A4 EP 1589329A4
Authority
EP
European Patent Office
Prior art keywords
fabricating
same
pressure sensor
semiconductor pressure
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04706349A
Other languages
English (en)
French (fr)
Other versions
EP1589329A1 (de
Inventor
Masakazu Sato
Tatsuya Ito
Hideto Noguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikura Ltd
Original Assignee
Fujikura Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd filed Critical Fujikura Ltd
Publication of EP1589329A1 publication Critical patent/EP1589329A1/de
Publication of EP1589329A4 publication Critical patent/EP1589329A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0061—Electrical connection means
    • G01L19/0069—Electrical connection means from the sensor to its support

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
EP04706349A 2003-01-30 2004-01-29 Halbleiterdrucksensor und prozess zu seiner herstellung Withdrawn EP1589329A4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003021284 2003-01-30
JP2003021284 2003-01-30
PCT/JP2004/000810 WO2004068096A1 (ja) 2003-01-30 2004-01-29 半導体圧力センサ及びその製造方法

Publications (2)

Publication Number Publication Date
EP1589329A1 EP1589329A1 (de) 2005-10-26
EP1589329A4 true EP1589329A4 (de) 2011-09-28

Family

ID=32820655

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04706349A Withdrawn EP1589329A4 (de) 2003-01-30 2004-01-29 Halbleiterdrucksensor und prozess zu seiner herstellung

Country Status (5)

Country Link
US (2) US7284443B2 (de)
EP (1) EP1589329A4 (de)
JP (1) JP3863171B2 (de)
CN (1) CN1739014B (de)
WO (1) WO2004068096A1 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4697853B2 (ja) * 2005-01-13 2011-06-08 エヌイーシー ショット コンポーネンツ株式会社 圧力スイッチおよびその製造方法
DE102005027365A1 (de) * 2005-06-14 2006-12-21 Robert Bosch Gmbh Hochdrucksensoreinrichtung und Verfahren zu ihrer Herstellung
JP2007010462A (ja) * 2005-06-30 2007-01-18 Denso Corp 圧力検出装置
TWI286383B (en) * 2005-12-23 2007-09-01 Delta Electronics Inc Semiconductor piezoresistive sensor and operation method thereof
EP1975587A1 (de) 2006-01-19 2008-10-01 Fujikura Ltd. Drucksensorpaket und elektronisches teil
JP5248317B2 (ja) * 2006-11-29 2013-07-31 株式会社フジクラ 圧力センサモジュール
JP4967907B2 (ja) * 2007-08-01 2012-07-04 ミツミ電機株式会社 半導体圧力センサ及びその製造方法
US8039960B2 (en) * 2007-09-21 2011-10-18 Stats Chippac, Ltd. Solder bump with inner core pillar in semiconductor package
JP5374716B2 (ja) * 2008-03-18 2013-12-25 エプコス アクチエンゲゼルシャフト マイクロフォンとその製造方法
WO2009142630A1 (en) * 2008-05-21 2009-11-26 Hewlett-Packard Development Company, L.P. Strain measurement chips for printed circuit boards
US8297125B2 (en) * 2008-05-23 2012-10-30 Honeywell International Inc. Media isolated differential pressure sensor with cap
CN101620022B (zh) * 2008-07-01 2011-12-21 欣兴电子股份有限公司 压力感测元件封装及其制作方法
USD611855S1 (en) * 2008-10-20 2010-03-16 Alps Electric Co., Ltd. Pressure sensor
USD611856S1 (en) * 2008-10-20 2010-03-16 Alps Electric Co., Ltd. Pressure sensor
US7900521B2 (en) * 2009-02-10 2011-03-08 Freescale Semiconductor, Inc. Exposed pad backside pressure sensor package
JP5847385B2 (ja) * 2010-08-31 2016-01-20 ミツミ電機株式会社 圧力センサ装置及び該装置を備える電子機器、並びに該装置の実装方法
CN102052985B (zh) * 2010-12-31 2012-06-13 西安交通大学 Mems筒式耐高温超高压力传感器
JP5761126B2 (ja) * 2012-05-31 2015-08-12 日本精機株式会社 圧力検出装置
JP6016228B2 (ja) * 2012-07-03 2016-10-26 ソニーセミコンダクタソリューションズ株式会社 センサデバイス
TWI464375B (zh) * 2012-08-07 2014-12-11 Ind Tech Res Inst 一種壓力感測器及其製法
JP5877248B2 (ja) * 2012-10-17 2016-03-02 株式会社鷺宮製作所 圧力センサおよび、それを備えるセンサユニット
EP2931334B1 (de) 2012-12-14 2017-08-09 Gambro Lundia AB Membranneupositionierung für einen druckbehälter mit positionserkennung
JP5783297B2 (ja) * 2013-08-06 2015-09-24 株式会社デンソー 力学量センサ
US9212054B1 (en) * 2014-10-15 2015-12-15 DunAn Sensing, LLC Pressure sensors and methods of making the same
JP6714439B2 (ja) 2016-06-09 2020-06-24 長野計器株式会社 歪検出器及びその製造方法
US10037957B2 (en) 2016-11-14 2018-07-31 Amkor Technology, Inc. Semiconductor device and method of manufacturing thereof
CN107595261B (zh) * 2017-09-27 2020-11-20 广州中科新知科技有限公司 一种人体振动信号采集板
CN108132123A (zh) * 2017-12-23 2018-06-08 埃泰克汽车电子(芜湖)有限公司 汽车刹车助力真空度传感器、压强差检测方法及制备方法
JP7268630B2 (ja) * 2020-03-30 2023-05-08 三菱電機株式会社 半導体圧力センサ及びその製造方法
CN112880902B (zh) * 2021-03-30 2025-02-14 明晶芯晟(成都)科技有限责任公司 一种阵列式压力测量装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01209746A (ja) * 1988-02-17 1989-08-23 Nec Corp 半導体装置
EP1107307A1 (de) * 1999-06-15 2001-06-13 Fujikura Ltd. Halbleitergehäuse, halbleiter, elektronikelement und herstellung eines halbleitergehäuses
JP2001343298A (ja) * 2000-06-05 2001-12-14 Denso Corp 半導体圧力センサ装置
US20020005072A1 (en) * 2000-06-30 2002-01-17 Akira Nidan Sensor held by base having lead

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2047014U (zh) * 1989-02-14 1989-11-01 于海波 硅自封闭压力传感器
US5333505A (en) * 1992-01-13 1994-08-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor pressure sensor for use at high temperature and pressure and method of manufacturing same
JPH06232423A (ja) * 1993-02-04 1994-08-19 Mitsubishi Electric Corp 半導体圧力センサ
CN2166447Y (zh) * 1993-06-28 1994-05-25 吉首大学 半导体加速度传感器
JPH07162018A (ja) * 1993-12-13 1995-06-23 Nagano Keiki Seisakusho Ltd 半導体圧力センサ
JPH10104101A (ja) * 1996-10-02 1998-04-24 Mitsubishi Electric Corp 半導体圧力センサ
US5986316A (en) * 1997-11-26 1999-11-16 Denso Corporation Semiconductor type physical quantity sensor
JP3618212B2 (ja) 1998-01-08 2005-02-09 松下電器産業株式会社 半導体装置及びその製造方法
US6167761B1 (en) * 1998-03-31 2001-01-02 Hitachi, Ltd. And Hitachi Car Engineering Co., Ltd. Capacitance type pressure sensor with capacitive elements actuated by a diaphragm
JP3520764B2 (ja) 1998-04-22 2004-04-19 松下電器産業株式会社 半導体装置およびその製造方法
JP3477375B2 (ja) 1998-08-05 2003-12-10 松下電器産業株式会社 半導体装置及びその製造方法
JP2000174078A (ja) 1998-12-08 2000-06-23 Advantest Corp プローブカード及びその製造方法
US20020029639A1 (en) * 2000-01-19 2002-03-14 Measurement Specialities, Inc. Isolation technique for pressure sensing structure
JP2001208626A (ja) * 2000-01-24 2001-08-03 Mitsubishi Electric Corp 半導体圧力センサ装置
JP4156205B2 (ja) * 2001-03-16 2008-09-24 株式会社フジクラ 半導体パッケージおよび半導体パッケージの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01209746A (ja) * 1988-02-17 1989-08-23 Nec Corp 半導体装置
EP1107307A1 (de) * 1999-06-15 2001-06-13 Fujikura Ltd. Halbleitergehäuse, halbleiter, elektronikelement und herstellung eines halbleitergehäuses
JP2001343298A (ja) * 2000-06-05 2001-12-14 Denso Corp 半導体圧力センサ装置
US20020005072A1 (en) * 2000-06-30 2002-01-17 Akira Nidan Sensor held by base having lead

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2004068096A1 *

Also Published As

Publication number Publication date
CN1739014A (zh) 2006-02-22
EP1589329A1 (de) 2005-10-26
CN1739014B (zh) 2010-05-05
US7284443B2 (en) 2007-10-23
US7530276B2 (en) 2009-05-12
WO2004068096A1 (ja) 2004-08-12
US20060185437A1 (en) 2006-08-24
US20080173096A1 (en) 2008-07-24
JP3863171B2 (ja) 2006-12-27
JPWO2004068096A1 (ja) 2006-05-18

Similar Documents

Publication Publication Date Title
EP1589329A4 (de) Halbleiterdrucksensor und prozess zu seiner herstellung
EP1491871A4 (de) Drucksensor und verfahren zu seiner herstellung
TWI371061B (en) Semiconductor device and method of fabricating the same
TWI350589B (en) A semiconductor device and a method of manufacturing the same
AU2003242012A1 (en) Semiconductor device and method for fabricating the same
TWI346995B (en) Semiconductor device and method for producing the same
TWI340987B (en) Magnetoelectronics device and method for fabricating the same
AU2003289448A1 (en) Semiconductor device and its fabricating method
IL182662A0 (en) An anti-glypican 3 antibody and processes for the production thereof
EP1445601A3 (de) Messchips für lokale Oberflächenplasmonenresonanzmesssensoren, Herstellungsverfahren für diese Messchips und Sensoren welche diese Chips verwenden
SG120978A1 (en) Metal-over-metal devices and the method for manufacturing same
AU2003236078A1 (en) Semiconductor device and its manufacturing method
AU2003281180A1 (en) Porous semiconductor and process for producing the same
AU2003292807A1 (en) Photoelectric conversion element and process for fabricating the same, electronic device and process for fabricating the same
EP1692449A4 (de) Verdampfer und herstellungsverfahren dafür
TWI316293B (en) Semiconductor device and method for manufacturing the same
TWI318713B (en) Lcd device and method for manufacturing the same
EP1631116A4 (de) Schalldetektionsmechanismus und prozess zu seiner herstellung
SG121844A1 (en) Device manufacturing method
SG119329A1 (en) Semiconductor device and method for manufacturing the same
TWI339866B (en) A semiconductor device and a method of manufacturing the same
TWI348776B (en) Contact pressure sensor and method for manufacturing the same
AU2003268710A1 (en) Semiconductor device and process for fabricating the same
TWI349342B (en) Mold die and method for manufacturing semiconductor device using the same
TWI348748B (en) Semiconductor device and method of fabricating the same

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20050728

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL LT LV MK

DAX Request for extension of the european patent (deleted)
RBV Designated contracting states (corrected)

Designated state(s): DE FR GB

RIN1 Information on inventor provided before grant (corrected)

Inventor name: NOGUCHI, HIDETO

Inventor name: ITO, TATSUYA

Inventor name: SATO, MASAKAZU

A4 Supplementary search report drawn up and despatched

Effective date: 20110829

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 29/84 20060101ALI20110823BHEP

Ipc: G01L 9/00 20060101AFI20110823BHEP

17Q First examination report despatched

Effective date: 20120328

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20120808