Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
  • G01R33/00—Arrangements or instruments for measuring magnetic variables
  • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
  • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
  • G01R33/09—Magnetoresistive devices
  • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors

Definitions

• Magnetoresistive layer systems or corresponding sensor elements are known from the prior art, for example for use in motor vehicles, in which the operating point can be shifted by auxiliary magnetic fields.
• the generation of an auxiliary magnetic field by means of mounted macroscopic hard magnets or current-carrying field coils is known.
• DE 101 28 135.8 also explains a concept in which a hard magnetic layer is deposited in the vicinity of a magnetoresistive layer stack, in particular on or under the layer stack, which mainly couples to the actual sensitive layers of the layer stack through its stray field.
• the focus is on the highest possible coercivity as a target parameter and on the other hand the remanent magnetic field as a limiting parameter.
• such a hard magnetic layer also leads to an electrical short circuit of the adjacent sensitive layers of the magnetoresistive layer system, which is a desired GMR effect ("giant magnetoresistance") or AMR effect (“anisotropic magnetoresistance”) or the sensitivity of the Layer system limited to an external magnetic field to be analyzed.
• the magnetoresistive layer system according to the invention and the sensor element according to the invention with this layer system have the advantage over the prior art that their sensitivity to detect external magnetic fields with respect to strength and / or direction is only very small or preferably not appreciably temperature-dependent within a predetermined temperature interval.
• the maximum sensitivity of the layer stack which is generally to be achieved at room temperature, changes with respect to an external magnetic field or the field strength of this magnetic field the temperature. Furthermore, its sensitivity also changes as a function of the bias magnetic field or auxiliary magnetic field generated within the layer stack, for example via an integrated hard magnetic layer, so that one can indeed set an operating point of the magnetoresistive layer stack that depends on the temperature and the strength of the bias or auxiliary magnetic field is. Overall, this leads to the fact that the operating point of the sensor element shifts considerably as a function of the temperature for a given bias magnetic field, which is usually accompanied by a significant loss in sensitivity.
• the layer arrangement in the magnetoresistive layer system according to the invention or in the sensor element produced therewith shows a temperature profile of the resulting magnetic field, which can be adapted to the temperature profile of the working point of the magnetoresistive layer stack, while hard magnetic materials, in particular with high Curie temperatures, have an intrinsic temperature profile Have magnetization.
• the bias magnetic field or auxiliary magnetic field generated above is always approximately proportional to the magnetization of the hard magnetic layer
• the resulting magnetic field of the layer arrangement provided according to the invention is advantageously determined by the temperature dependence of the interlayer exchange coupling.
• the stray field coupling of the first magnetic layer and the second magnetic layer, which are ferromagnetically exchange-coupled via the interlayer is opposite in the case of the provided ferromagnetic interlayer coupling, i. in this sense antiferromagnetic.
• the antiferromagnetic component increases in relative terms and thus reduces the total stray magnetic field of the layer arrangement. Accordingly, the previously set operating point shifts to smaller magnetic fields as a result of the temperature increase and thus compensates for a change in the sensitivity of the magnetoresistive layer stack as a function of the temperature.
• the strength of the resulting magnetic field generated by the layer arrangement coincides with a required magnetic field value to achieve maximum sensitivity of the magnetoresistive layer stack, a particularly high sensitivity of the magnetoresistive layer system or the sensor element generated thereby is advantageously achieved. This then advantageously remains over the entire temperature interval that the layer system drive is normally exposed, that is, for example, the temperature interval from -30 ° C to + 200 ° C, the same.
• the layer arrangement and the magnetoresistive layer stack show a similar or the same temperature dependency, which is determined in each case by the interlayer exchange coupling.
• the layer arrangement can be brought into proximity to the magnetoresistive layer stack in various designs, i.e. in the case of vertical integration, it can be arranged above or below the magnetoresistive layer stack and / or in the case of horizontal integration on one side or preferably on both sides next to the magnetoresistive layer stack.
• the two magnetic layers of the layer arrangement have a different thickness.
• FIG. 1 shows a section through a magnetoresistive layer system.
• FIG. 1 shows a first magnetic layer 12 with a resulting magnetization mi with the direction indicated in FIG. 1, on which an intermediate layer 11 is located.
• a second magnetic layer 13 with a resulting magnetization m 2 with the direction indicated in FIG. 1 is arranged on the intermediate layer 11.
• a magnetoresistive layer stack 14, as is known per se from the prior art, is then located on the second magnetic layer 13.
• the magnetoresistive layer stack 14 works on the basis of the GMR effect according to the principle of coupled multilayers or according to the spin valve principle.
• the first magnetic layer 12, the intermediate layer 11 and the second magnetic layer 13 together form a layer arrangement 15, which generates a resulting magnetic field which acts on the magnetoresistive layer stack. It is further provided that the first magnetic layer 12 and the second magnetic layer 13 are ferromagnetically exchange-coupled via the intermediate layer 11.
• the first magnetic layer 12 is, for example, a soft magnetic layer, in particular a layer made of permalloy, CoFe, Co, Fe, Ni, FeNi and magnetic alloys which contain these materials.
• the second magnetic layer 13 is, for example, a hard magnetic layer, in particular a hard magnetic layer consisting of CoSm, CoCrPt, CoCrTa, Cr or CoPt.
• the first magnetic layer 12 can also be a hard magnetic layer made of the materials mentioned and the second magnetic layer 13 can be a soft magnetic layer made of the materials mentioned.
• both the first magnetic layer 12 and the second magnetic layer 13 can be a hard magnetic layer made of CoSm, CoCrPt, CoCrTa, Cr or CoPt.
• the thickness of the first magnetic layer 12 differs from the thickness of the second magnetic layer 13.
• the thickness of the second magnetic layer 13 is preferably greater than that of the first magnetic layer 12.
• the non-magnetic intermediate layer 11 consists, for example, of copper, an alloy with or of copper, silver and gold, such as CuAgAu or preferably of ruthenium.
• the deposition of the individual layers explained in FIG. 1 is otherwise not critical to known influencing factors.
• the desired ferromagnetic interlayer exchange coupling can be set using the non-magnetic interlayer 11 over known layer thicknesses of the intermediate layer 11.
• the ferromagnetic interlayer exchange coupling between the first magnetic layer 12 and the second magnetic layer 13 initially "softens".
• the stray field coupling of the two coupled magnetic layers 12, 13 is the ferromagnetic interlayer exchange coupling opposite direction.
• this softening of the ferromagnetic layer coupling by increasing the temperature means that the opposing stray field coupling of the magnetic layers 12, 13 increases relatively, so that the entire stray field of the layer arrangement 15, i. H. the resulting magnetic field acting on the magnetoresistive layer stack 14 is reduced. Accordingly, the working point of the magnetoresistive layer stack 14 set via the layer arrangement 15 is shifted to smaller magnetic fields.
• FIG. 1 shows how the first magnetic layer 12 generates a stray field Hj, which acts on the magnetoresistive layer stack 14, and how the second magnetic layer 13 generates a stray field H 2 , which also acts on the magnetoresistive layer stack 14. If the interlayer exchange coupling between the first magnetic layer 12 and the second magnetic layer 13 is softened, the sum of the stray fields Hi, H 2 , ie the resulting bias magnetic field acting on the magnetoresistive layer stack, is reduced overall in the example explained.
• one of the magnetic layers 12, 13 is a soft magnetic layer, for example the second magnetic layer 13, it is even possible to set the two stray fields Hi and H 2 in such a way that they largely compensate each other.
• the concept explained for the layer arrangement 15 can be easily inserted into existing magnetoresistive layer systems with GMR multilayers, GMR spin valve structure and AMR layer systems or CMR layer systems ("colossal magnetoresistance").
• the magnetoresistive layer system 5 according to FIG. 1 is typically located on a substrate and is connected to this substrate via a so-called buffer layer.
• a cover layer for example made of tantalum, can also be located on the magnetoresistive layer stack 14.

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• Physics & Mathematics (AREA)
• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Nanotechnology (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Crystallography & Structural Chemistry (AREA)
• Measuring Magnetic Variables (AREA)
• Hall/Mr Elements (AREA)
• Thin Magnetic Films (AREA)

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• 2002
  • 2002-12-17 DE DE10258860A patent/DE10258860A1/de not_active Ceased
• 2003
  • 2003-10-18 WO PCT/DE2003/003503 patent/WO2004055537A1/de active Application Filing
  • 2003-10-18 JP JP2004559586A patent/JP4546835B2/ja not_active Expired - Fee Related
  • 2003-10-18 CN CNB2003801066449A patent/CN100504426C/zh not_active Expired - Fee Related
  • 2003-10-18 EP EP03773554A patent/EP1576381A1/de not_active Withdrawn
  • 2003-10-18 US US10/537,955 patent/US20060119356A1/en not_active Abandoned
• 2010
  • 2010-02-19 JP JP2010034541A patent/JP5124606B2/ja not_active Expired - Fee Related

Non-Patent Citations (1)

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