EP1566417A4 - Zusammensetzung zur bildung eines porösenfilms, poröser film, herstellverfahren dafür, zwischenschichtisolierfilm und halbleitervorrichtung - Google Patents

Zusammensetzung zur bildung eines porösenfilms, poröser film, herstellverfahren dafür, zwischenschichtisolierfilm und halbleitervorrichtung

Info

Publication number
EP1566417A4
EP1566417A4 EP03811130A EP03811130A EP1566417A4 EP 1566417 A4 EP1566417 A4 EP 1566417A4 EP 03811130 A EP03811130 A EP 03811130A EP 03811130 A EP03811130 A EP 03811130A EP 1566417 A4 EP1566417 A4 EP 1566417A4
Authority
EP
European Patent Office
Prior art keywords
porous film
composition
producing
semiconductor device
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP03811130A
Other languages
English (en)
French (fr)
Japanese (ja)
Other versions
EP1566417A1 (de
EP1566417B1 (de
Inventor
M Iwabuchi
F Yagihashi
Y Hamada
Hideo Nakagawa
Masaru Sasago
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of EP1566417A1 publication Critical patent/EP1566417A1/de
Publication of EP1566417A4 publication Critical patent/EP1566417A4/de
Application granted granted Critical
Publication of EP1566417B1 publication Critical patent/EP1566417B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/22—Compounds containing nitrogen bound to another nitrogen atom
    • C08K5/23—Azo-compounds
    • C08K5/235—Diazo and polyazo compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/06—Preparatory processes
    • C08G77/08—Preparatory processes characterised by the catalysts used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Silicon Polymers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
EP03811130A 2002-11-13 2003-11-13 Zusammensetzung zur bildung eines porösenfilms, poröser film, herstellverfahren dafür, zwischenschichtisolierfilm und halbleitervorrichtung Expired - Lifetime EP1566417B1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002329126 2002-11-13
JP2002329126A JP2004161876A (ja) 2002-11-13 2002-11-13 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置
PCT/JP2003/014438 WO2004044073A1 (ja) 2002-11-13 2003-11-13 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置

Publications (3)

Publication Number Publication Date
EP1566417A1 EP1566417A1 (de) 2005-08-24
EP1566417A4 true EP1566417A4 (de) 2007-02-28
EP1566417B1 EP1566417B1 (de) 2010-03-24

Family

ID=32310560

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03811130A Expired - Lifetime EP1566417B1 (de) 2002-11-13 2003-11-13 Zusammensetzung zur bildung eines porösenfilms, poröser film, herstellverfahren dafür, zwischenschichtisolierfilm und halbleitervorrichtung

Country Status (6)

Country Link
US (2) US7126208B2 (de)
EP (1) EP1566417B1 (de)
JP (1) JP2004161876A (de)
AU (1) AU2003301981A1 (de)
DE (1) DE60331851D1 (de)
WO (1) WO2004044073A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5170956B2 (ja) * 2004-12-28 2013-03-27 キヤノン株式会社 帯電部材、プロセスカートリッジおよび電子写真装置
US20070123059A1 (en) * 2005-11-29 2007-05-31 Haverty Michael G Methods of internal stress reduction in dielectric films with chemical incorporation and structures formed thereby
JP2010512453A (ja) * 2006-07-27 2010-04-22 ダウ・コーニング・コーポレイション シリコーン樹脂を製造する方法
JP2010165930A (ja) * 2009-01-16 2010-07-29 Idemitsu Kosan Co Ltd 有機薄膜トランジスタ、その製造方法及びそれを備える装置
KR101344795B1 (ko) * 2009-12-31 2013-12-26 제일모직주식회사 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법
US20140001181A1 (en) * 2012-07-02 2014-01-02 Pramod K. Sharma UV-Cured Strengthening Coating For Glass Containers
KR101960622B1 (ko) * 2015-01-14 2019-03-20 닛뽕소다 가부시키가이샤 유기 박막 트랜지스터
JP6892110B2 (ja) * 2017-04-17 2021-06-18 小西化学工業株式会社 ポリメチルシルセスキオキサンの製造方法
KR20230066107A (ko) * 2020-10-06 2023-05-12 와커 헤미 아게 알킬 실리콘 수지의 제조 방법
JP7717588B2 (ja) * 2021-11-30 2025-08-04 リンテック株式会社 シラン化合物重合体の製造方法
WO2025134484A1 (ja) * 2023-12-18 2025-06-26 ダウ・東レ株式会社 ポリシロキサン組成物およびその用途

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6313045B1 (en) * 1999-12-13 2001-11-06 Dow Corning Corporation Nanoporous silicone resins having low dielectric constants and method for preparation
WO2002061765A1 (en) * 2001-01-29 2002-08-08 Jsr Corporation Composite particle for dielectrics, ultramicroparticulate composite resin particle, composition for forming dielectrics and use thereof

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61170588A (ja) * 1985-01-25 1986-08-01 Tama Kagaku Kogyo Kk 水酸化第四アンモニウム水溶液の製造方法
JPS6315355A (ja) 1986-07-07 1988-01-22 Fujitsu Ltd プログラムロ−ド方式
JPH05125191A (ja) 1991-11-06 1993-05-21 Kanegafuchi Chem Ind Co Ltd ケイ素系ハイブリツド材料
JPH06145599A (ja) 1992-11-06 1994-05-24 Toray Ind Inc コーティング用組成物
US5494859A (en) * 1994-02-04 1996-02-27 Lsi Logic Corporation Low dielectric constant insulation layer for integrated circuit structure and method of making same
JPH09194298A (ja) 1995-04-25 1997-07-29 Rikagaku Kenkyusho シリカ−界面活性剤ナノ複合体及びその製造方法
US5707783A (en) * 1995-12-04 1998-01-13 Complex Fluid Systems, Inc. Mixtures of mono- and DI- or polyfunctional silanes as silylating agents for top surface imaging
US6143855A (en) * 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content
US6391999B1 (en) * 1998-02-06 2002-05-21 Rensselaer Polytechnic Institute Epoxy alkoxy siloxane oligomers
JP2000044875A (ja) 1998-05-18 2000-02-15 Jsr Corp 膜形成用組成物、膜の形成方法および低密度膜
US6037275A (en) * 1998-08-27 2000-03-14 Alliedsignal Inc. Nanoporous silica via combined stream deposition
US6639015B1 (en) * 1998-09-01 2003-10-28 Catalysts & Chemicals Industries Co., Ltd. Coating liquid for forming a silica-containing film with a low-dielectric constant
EP1114794A4 (de) * 1998-09-10 2010-02-24 Nissan Chemical Ind Ltd Monoliförmiges kieselsäuresol, verfahren zur herstellung desselben und tintenstrahl aufnahmemedium
JP2000309751A (ja) 1999-04-27 2000-11-07 Jsr Corp 膜形成用組成物および絶縁膜形成用材料
JP2000309753A (ja) 1999-04-27 2000-11-07 Jsr Corp 膜形成用組成物および絶縁膜形成用材料
JP2001049178A (ja) 1999-06-01 2001-02-20 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
JP2001049179A (ja) 1999-06-01 2001-02-20 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
JP2000345041A (ja) 1999-06-04 2000-12-12 Jsr Corp 膜形成用組成物、膜形成用組成物の製造方法および絶縁膜形成用材料
EP1058274B1 (de) * 1999-06-04 2005-07-27 JSR Corporation Beschichtungszusammensetzung für die Filmherstellung und Material für isolierenden Schichten
JP4190662B2 (ja) 1999-06-18 2008-12-03 エルピーダメモリ株式会社 半導体装置及びタイミング制御回路
JP2001002993A (ja) 1999-06-24 2001-01-09 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
US6696538B2 (en) * 1999-07-27 2004-02-24 Lg Chemical Ltd. Semiconductor interlayer dielectric material and a semiconductor device using the same
JP3733824B2 (ja) 1999-08-12 2006-01-11 Ｊｓｒ株式会社 シリカ系被膜形成用塗布液の製造方法
JP2001115028A (ja) 1999-08-12 2001-04-24 Jsr Corp 膜形成用組成物、膜の形成方法およびシリカ系膜
JP2001055554A (ja) 1999-08-20 2001-02-27 Jsr Corp 膜形成用組成物および絶縁膜形成用材料
US6197913B1 (en) * 1999-08-26 2001-03-06 Dow Corning Corporation Method for making microporous silicone resins with narrow pore-size distributions
JP2001080915A (ja) 1999-09-09 2001-03-27 Matsushita Electric Ind Co Ltd 多孔体の製造方法
JP4804616B2 (ja) * 1999-09-20 2011-11-02 株式会社豊田中央研究所 多孔体及びその製造方法
JP2001098218A (ja) 1999-09-28 2001-04-10 Hitachi Chem Co Ltd シリカ系被膜、シリカ系被膜の形成方法及びシリカ系被膜を有する電子部品
JP4662000B2 (ja) 1999-09-29 2011-03-30 Ｊｓｒ株式会社 膜形成用組成物、膜の形成方法および絶縁膜
JP2001115021A (ja) 1999-10-18 2001-04-24 Asahi Kasei Corp シリカ前駆体／有機ポリマー組成物
US6359096B1 (en) * 1999-10-25 2002-03-19 Dow Corning Corporation Silicone resin compositions having good solution solubility and stability
JP4524822B2 (ja) 1999-10-29 2010-08-18 株式会社豊田中央研究所 高結晶性シリカメソ多孔体薄膜の製造方法
US6592980B1 (en) * 1999-12-07 2003-07-15 Air Products And Chemicals, Inc. Mesoporous films having reduced dielectric constants
JP2001203197A (ja) 2000-01-21 2001-07-27 Jsr Corp 膜、および膜の形成方法
US20030104225A1 (en) * 2000-02-01 2003-06-05 Jsr Corporation Process for producing silica-based film, silica-based film, insulating film, and semiconductor device
JP4195773B2 (ja) * 2000-04-10 2008-12-10 Ｊｓｒ株式会社 層間絶縁膜形成用組成物、層間絶縁膜の形成方法およびシリカ系層間絶縁膜
DE60138327D1 (de) * 2000-02-28 2009-05-28 Jsr Corp Zusammensetzung zur Filmerzeugung, Verfahren zur Filmerzeugung und Filme auf Basis von Siliciumoxid
JP4453148B2 (ja) 2000-02-28 2010-04-21 Ｊｓｒ株式会社 膜形成用組成物および絶縁膜形成用材料
US7128976B2 (en) * 2000-04-10 2006-10-31 Jsr Corporation Composition for film formation, method of film formation, and silica-based film
US6852299B2 (en) * 2000-04-28 2005-02-08 Mitsui Chemicals, Inc. Water-repellent porous silica, method for preparation thereof and use thereof
JP4117439B2 (ja) 2000-05-15 2008-07-16 Ｊｓｒ株式会社 膜形成用組成物およびシリカ系膜
JP4530113B2 (ja) 2000-07-06 2010-08-25 Ｊｓｒ株式会社 膜形成用組成物の製造方法、膜形成用組成物、膜の形成方法およびシリカ系膜
JP2002020689A (ja) 2000-07-07 2002-01-23 Jsr Corp 膜形成用組成物の製造方法、膜形成用組成物、膜の形成方法およびシリカ系膜
JP4247592B2 (ja) 2000-07-13 2009-04-02 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4021131B2 (ja) 2000-07-14 2007-12-12 触媒化成工業株式会社 低誘電率シリカ系被膜形成用塗布液および低誘電率シリカ系被膜付基板
JP2001131479A (ja) 2000-10-30 2001-05-15 Tokyo Ohka Kogyo Co Ltd シリカ系被膜形成用塗布液
KR100343938B1 (en) * 2000-11-29 2002-07-20 Samsung Electronics Co Ltd Preparation method of interlayer insulation membrane of semiconductor
JP3654343B2 (ja) 2001-01-15 2005-06-02 信越化学工業株式会社 膜形成用組成物及びその製造方法、並びに多孔質膜の形成方法及び多孔質膜
JP4855582B2 (ja) * 2001-02-09 2012-01-18 日本碍子株式会社 メソポーラスシリカ、メソポーラスシリカ複合体及びそれらの製造方法
US6533855B1 (en) * 2001-02-13 2003-03-18 Novellus Systems, Inc. Dispersions of silicalite and zeolite nanoparticles in nonpolar solvents
EP1245642B1 (de) 2001-03-27 2005-06-08 Samsung Electronics Co., Ltd. Polysiloxanharz und Verfahren zur Herstellung einer Zwischenschicht daraus für Wafer
US6596404B1 (en) * 2001-07-26 2003-07-22 Dow Corning Corporation Siloxane resins
US20030064321A1 (en) * 2001-08-31 2003-04-03 Arch Specialty Chemicals, Inc. Free-acid containing polymers and their use in photoresists
JP4662718B2 (ja) 2002-04-10 2011-03-30 ハネウェル・インターナショナル・インコーポレーテッド 集積回路用途用の低金属多孔質シリカ誘電体
US7018678B2 (en) * 2002-06-03 2006-03-28 Shipley Company, L.L.C. Electronic device manufacture

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6313045B1 (en) * 1999-12-13 2001-11-06 Dow Corning Corporation Nanoporous silicone resins having low dielectric constants and method for preparation
WO2002061765A1 (en) * 2001-01-29 2002-08-08 Jsr Corporation Composite particle for dielectrics, ultramicroparticulate composite resin particle, composition for forming dielectrics and use thereof
US20030151032A1 (en) * 2001-01-29 2003-08-14 Nobuyuki Ito Composite particle for dielectrics, ultramicroparticulate composite resin particle, composition for forming dielectrics and use thereof

Also Published As

Publication number Publication date
US20040232553A1 (en) 2004-11-25
DE60331851D1 (de) 2010-05-06
AU2003301981A1 (en) 2004-06-03
US7126208B2 (en) 2006-10-24
EP1566417A1 (de) 2005-08-24
JP2004161876A (ja) 2004-06-10
WO2004044073A1 (ja) 2004-05-27
US20070087124A1 (en) 2007-04-19
EP1566417B1 (de) 2010-03-24

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