EP1547153A4 - Points quantiques, materiaux nanocomposites a points quantiques, dispositifs optiques a points quantiques et procedes de fabrication associes - Google Patents

Points quantiques, materiaux nanocomposites a points quantiques, dispositifs optiques a points quantiques et procedes de fabrication associes

Info

Publication number
EP1547153A4
EP1547153A4 EP03816720A EP03816720A EP1547153A4 EP 1547153 A4 EP1547153 A4 EP 1547153A4 EP 03816720 A EP03816720 A EP 03816720A EP 03816720 A EP03816720 A EP 03816720A EP 1547153 A4 EP1547153 A4 EP 1547153A4
Authority
EP
European Patent Office
Prior art keywords
quantum dots
optical devices
fabrication methods
nanocomposite materials
related fabrication
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03816720A
Other languages
German (de)
English (en)
Other versions
EP1547153A2 (fr
Inventor
Howard Wing Hoon Lee
Alan Hap Chin
William Matthew Pfenninger
Majid Keshavarz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UltraDots Inc
Original Assignee
UltraDots Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/212,001 external-priority patent/US20030066998A1/en
Priority claimed from US10/212,004 external-priority patent/US6794265B2/en
Priority claimed from US10/211,991 external-priority patent/US6819845B2/en
Priority claimed from US10/212,005 external-priority patent/US6710366B1/en
Application filed by UltraDots Inc filed Critical UltraDots Inc
Publication of EP1547153A2 publication Critical patent/EP1547153A2/fr
Publication of EP1547153A4 publication Critical patent/EP1547153A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/3515—All-optical modulation, gating, switching, e.g. control of a light beam by another light beam
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G02F1/3556—Semiconductor materials, e.g. quantum wells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122—Single quantum well structures
    • H01L29/127—Quantum box structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1602—Diamond
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12097—Ridge, rib or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12145—Switch
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12147—Coupler
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12159—Interferometer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12195—Tapering
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01791—Quantum boxes or quantum dots
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/217—Multimode interference type
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/3515—All-optical modulation, gating, switching, e.g. control of a light beam by another light beam
    • G02F1/3517—All-optical modulation, gating, switching, e.g. control of a light beam by another light beam using an interferometer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/3515—All-optical modulation, gating, switching, e.g. control of a light beam by another light beam
    • G02F1/3521—All-optical modulation, gating, switching, e.g. control of a light beam by another light beam using a directional coupler
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/365—Non-linear optics in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2/00—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
    • G02F2/004—Transferring the modulation of modulated light, i.e. transferring the information from one optical carrier of a first wavelength to a second optical carrier of a second wavelength, e.g. all-optical wavelength converter
    • G02F2/006—All-optical wavelength conversion
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/32—Photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/36—Micro- or nanomaterials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Luminescent Compositions (AREA)
  • Optical Integrated Circuits (AREA)
EP03816720A 2002-08-02 2003-08-01 Points quantiques, materiaux nanocomposites a points quantiques, dispositifs optiques a points quantiques et procedes de fabrication associes Withdrawn EP1547153A4 (fr)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US212001 1980-12-01
US212004 2002-08-02
US10/212,001 US20030066998A1 (en) 2001-08-02 2002-08-02 Quantum dots of Group IV semiconductor materials
US212005 2002-08-02
US211991 2002-08-02
US10/212,004 US6794265B2 (en) 2001-08-02 2002-08-02 Methods of forming quantum dots of Group IV semiconductor materials
US10/211,991 US6819845B2 (en) 2001-08-02 2002-08-02 Optical devices with engineered nonlinear nanocomposite materials
US10/212,005 US6710366B1 (en) 2001-08-02 2002-08-02 Nanocomposite materials with engineered properties
PCT/US2003/024245 WO2005017951A2 (fr) 2002-08-02 2003-08-01 Points quantiques, materiaux nanocomposites a points quantiques, dispositifs optiques a points quantiques et procedes de fabrication associes

Publications (2)

Publication Number Publication Date
EP1547153A2 EP1547153A2 (fr) 2005-06-29
EP1547153A4 true EP1547153A4 (fr) 2010-12-01

Family

ID=34199210

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03816720A Withdrawn EP1547153A4 (fr) 2002-08-02 2003-08-01 Points quantiques, materiaux nanocomposites a points quantiques, dispositifs optiques a points quantiques et procedes de fabrication associes

Country Status (4)

Country Link
EP (1) EP1547153A4 (fr)
JP (1) JP2006513458A (fr)
AU (1) AU2003304433A1 (fr)
WO (1) WO2005017951A2 (fr)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6607829B1 (en) 1997-11-13 2003-08-19 Massachusetts Institute Of Technology Tellurium-containing nanocrystalline materials
US6207392B1 (en) 1997-11-25 2001-03-27 The Regents Of The University Of California Semiconductor nanocrystal probes for biological applications and process for making and using such probes
CA2480518C (fr) 2002-03-29 2016-07-19 Massachusetts Institute Of Technology Dispositif electroluminescent comprenant des nanocristaux semi-conducteurs
AU2003301769A1 (en) 2002-08-15 2004-06-07 Moungi G. Bawendi Stabilized semiconductor nanocrystals
US7332211B1 (en) 2002-11-07 2008-02-19 Massachusetts Institute Of Technology Layered materials including nanoparticles
WO2005036599A2 (fr) 2003-10-06 2005-04-21 Massachusetts Institute Of Technology Dispositif a memoire non volatile
US7645397B2 (en) * 2004-01-15 2010-01-12 Nanosys, Inc. Nanocrystal doped matrixes
US10225906B2 (en) 2004-10-22 2019-03-05 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
WO2006137924A2 (fr) 2004-11-03 2006-12-28 Massachusetts Institute Of Technology Dispositif electroluminescent
US7799422B2 (en) 2004-11-03 2010-09-21 Massachusetts Institute Of Technology Absorbing film
US8891575B2 (en) 2004-11-30 2014-11-18 Massachusetts Institute Of Technology Optical feedback structures and methods of making
JP4977139B2 (ja) 2005-09-16 2012-07-18 ボード オブ トラスティーズ オブ ザ レランド スタンフォード ジュニア ユニバーシティ 微小共振器光スイッチおよび光スイッチングの方法
JP2007197382A (ja) * 2006-01-27 2007-08-09 Konica Minolta Medical & Graphic Inc 半導体ナノ粒子
US8941299B2 (en) 2006-05-21 2015-01-27 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US8643058B2 (en) 2006-07-31 2014-02-04 Massachusetts Institute Of Technology Electro-optical device including nanocrystals
KR100853087B1 (ko) * 2007-04-26 2008-08-19 삼성전자주식회사 나노결정, 그의 제조방법 및 그를 포함하는 전자소자
KR101463011B1 (ko) * 2007-05-31 2014-11-18 더 어드미니스트레이터즈 오브 더 튜래인 어듀케이셔널 훤드 안정한 작용성화된 나노입자를 형성하는 방법
JP2010532910A (ja) * 2007-06-25 2010-10-14 キユーデイー・ビジヨン・インコーポレーテツド 組成物、光学部品、光学部品を含むシステム、デバイス、および他の製品
DE102008035559A1 (de) 2008-07-30 2010-02-11 Rupert Goihl Elektrolumineszenz oder Photovoltaikquelle
JP5495038B2 (ja) * 2009-04-02 2014-05-21 独立行政法人物質・材料研究機構 蛍光発光性シリコンナノ粒子の製造方法
JP2010248325A (ja) * 2009-04-14 2010-11-04 National Institute For Materials Science シート状発光体
JP5326767B2 (ja) * 2009-04-20 2013-10-30 大日本印刷株式会社 光学機能層用微粒子、ディスプレイ用光学部材及び防眩機能層
GB0916700D0 (en) 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
JP2011187646A (ja) * 2010-03-08 2011-09-22 Seiko Epson Corp 光学変換装置及び同装置を含む電子機器
KR101683270B1 (ko) 2010-03-31 2016-12-21 삼성전자 주식회사 백색 발광 다이오드를 포함하는 액정 디스플레이 장치
US8702277B2 (en) 2010-07-12 2014-04-22 Samsung Electronics Co., Ltd. White light emitting diode and liquid crystal display including the same
JP5830777B2 (ja) * 2010-07-29 2015-12-09 国立大学法人九州工業大学 共振器ポラリトン素子
JP5558395B2 (ja) * 2011-03-24 2014-07-23 公益財団法人電磁材料研究所 半導体ナノ複合構造薄膜材料およびその製造方法
CN103890915A (zh) * 2011-08-19 2014-06-25 威廉马歇莱思大学 阳极电池材料及其制备方法
JP2013095850A (ja) * 2011-11-01 2013-05-20 National Institute For Materials Science ゲルマニウムナノ粒子蛍光体及びその製造方法
US20130112942A1 (en) 2011-11-09 2013-05-09 Juanita Kurtin Composite having semiconductor structures embedded in a matrix
JP6039215B2 (ja) * 2012-03-30 2016-12-07 京セラ株式会社 太陽電池
CN104428394A (zh) * 2012-04-26 2015-03-18 阿卜杜拉国王科技大学 胶态光致发光非晶形多孔硅,制造胶态光致发光非晶形多孔硅的方法,以及使用胶态光致发光非晶形多孔硅的方法
US20140079912A1 (en) * 2012-09-17 2014-03-20 The Boeing Company Ir absorbing coatings comprisiing fluorinated nanoparticles
JP5955305B2 (ja) * 2012-12-26 2016-07-20 富士フイルム株式会社 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
JP6136313B2 (ja) * 2013-02-01 2017-05-31 国立研究開発法人物質・材料研究機構 緑色発光ゲルマニウムナノ粒子及びその製造方法
JP6270135B2 (ja) * 2013-03-22 2018-01-31 国立研究開発法人物質・材料研究機構 高効率発光ナノ粒子およびこれをレーザ媒体に用いた光増幅器
JP6229228B2 (ja) * 2013-08-09 2017-11-15 国立大学法人横浜国立大学 光制御素子及びこれを用いる量子デバイス
WO2015075564A2 (fr) 2013-10-04 2015-05-28 King Abdullah University Of Science And Technology Système et procédé de réalisation de boîtes quantiques
JP6427876B2 (ja) * 2013-12-27 2018-11-28 Jsr株式会社 感放射線性樹脂組成物、硬化膜、発光素子および発光層の形成方法
KR101982011B1 (ko) * 2017-07-17 2019-05-27 주식회사 지엘비젼 양자점필름 및 이를 이용하는 광학부재
KR102250003B1 (ko) * 2017-10-18 2021-05-11 한양대학교 산학협력단 막, 멀티레벨 소자, 멀티레벨 소자의 제조방법, 멀티레벨 소자의 구동방법
JP2019086655A (ja) * 2017-11-07 2019-06-06 住友ベークライト株式会社 光導波路フィルム減衰器および光信号の強度調整方法
KR102547915B1 (ko) * 2018-10-12 2023-06-23 엘지디스플레이 주식회사 양자점 발광다이오드, 그 제조 방법 및 양자점 발광표시장치
WO2021052606A1 (fr) * 2019-09-20 2021-03-25 Humboldt-Universität Zu Berlin Dispositif pour générer des photons individuels
JP2021125492A (ja) * 2020-01-31 2021-08-30 キヤノン株式会社 半導体装置、表示装置、撮像システム及び移動体
IL273118B (en) 2020-03-05 2022-03-01 Allen Richter Self-adaptive electromagnetic radiation guide
CN114089580B (zh) * 2021-11-12 2023-06-06 南京信息工程大学 一种新型少模环路波长转换装置
CN113916838B (zh) * 2021-12-14 2022-03-01 山东省科学院海洋仪器仪表研究所 一种基于双共振效应的海水温盐传感器、测量系统及方法
WO2023218578A1 (fr) * 2022-05-11 2023-11-16 日本電信電話株式会社 Commutateur optique

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0823645B2 (ja) * 1989-11-24 1996-03-06 松下電器産業株式会社 非線形光学薄膜及びその製造方法
US5508829A (en) * 1992-12-18 1996-04-16 International Business Machines Corporation LTG AlGaAs non-linear optical material and devices fabricated therefrom
US5737102A (en) * 1992-12-30 1998-04-07 University Of Pittsburgh Of The Commonwealth System Of Higher Education Method of making an optically nonlinear switched optical device and related devices
US5452123A (en) * 1992-12-30 1995-09-19 University Of Pittsburgh Of The Commonwealth System Of Higher Education Method of making an optically nonlinear switched optical device and related devices
US5474591A (en) * 1994-01-31 1995-12-12 Duke University Method of synthesizing III-V semiconductor nanocrystals
US6268014B1 (en) * 1997-10-02 2001-07-31 Chris Eberspacher Method for forming solar cell materials from particulars
US5909614A (en) * 1997-12-08 1999-06-01 Krivoshlykov; Sergei G. Method of improving performance of semiconductor light emitting device
US6251303B1 (en) * 1998-09-18 2001-06-26 Massachusetts Institute Of Technology Water-soluble fluorescent nanocrystals
US6585947B1 (en) * 1999-10-22 2003-07-01 The Board Of Trustess Of The University Of Illinois Method for producing silicon nanoparticles

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
BALASUBRAMANIAN S ET AL: "Three-dimensional epitaxy: thermodynamic stability range of coherent germanium nanocrystallites in silicon host", SURFACE INTERFACE AND STRESS EFFECTS IN ELECTRONIC MATERIAL NANOSTRUCTURES : SYMPOSIUM HELD NOVEMBER 27 - DECEMBER 1, 1995, BOSTON, MASSACHUSETTS, USA; [MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS], PITTSBURGH, PA. : MATERIALS RESEARCH SOC, US, vol. 405, 27 November 1996 (1996-11-27), pages 133 - 138, XP008127391, ISBN: 978-1-55899-308-2 *
H. MORISAKI ET AL.: "Above-band-gap photoluminescence from Si fine particles with oxide shell", JOURNAL OF APPLIED PHYSICS, vol. 70, no. 3, 1 August 1991 (1991-08-01), US, pages 1869 - 1870, XP002602842 *
J.D. HOLMES ET AL.: "Artificial atoms of silicon", MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, vol. 582, 29 November 1999 (1999-11-29) - 2 December 1999 (1999-12-02), Warrendale, PA, USA, pages H2.5.1 - H.2.5.5, XP008127478, ISBN: 1-55899-490-4 *
KANEMITSU Y ET AL: "Photoluminescence mechanism of silicon quantum dots and wells", ADVANCES IN MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS - 1996 : SYMPOSIUM HELD DECEMBER 2 - 6, 1996, BOSTON, MASSACHUSETTS, USA; [MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS ; 452], MATERIALS RESEARCH SOC, PITTSBURGH, PA, vol. 452, 2 December 1996 (1996-12-02), pages 195 - 200, XP008127387, ISBN: 978-1-55899-356-3 *

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