EP1522523B1 - Hochreine Kohlenstoffmaterial - Google Patents

Hochreine Kohlenstoffmaterial Download PDF

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Publication number
EP1522523B1
EP1522523B1 EP20040023961 EP04023961A EP1522523B1 EP 1522523 B1 EP1522523 B1 EP 1522523B1 EP 20040023961 EP20040023961 EP 20040023961 EP 04023961 A EP04023961 A EP 04023961A EP 1522523 B1 EP1522523 B1 EP 1522523B1
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Prior art keywords
high purity
fiber reinforced
composite material
carbon fiber
graphite
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English (en)
French (fr)
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EP1522523A1 (de
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Ichiro Fujita
Satoru Nogami
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Toyo Tanso Co Ltd
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Toyo Tanso Co Ltd
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Definitions

  • This invention relates to a graphite or carbon fiber reinforced carbon composite material with a very low impurity content and, more particularly, to a high purity graphite or carbon fiber reinforced carbon composite material suited for use in the semiconductor industry in producing silicon single crystals, silicon carbide (SiC) single crystals, gallium nitride (GaN), calcium fluoride (CaF 2 ) and so forth or in the nuclear industry and for use as a substrate for ceramic layer coating. It also relates to a ceramic coated high purity graphite or carbon fiber reinforced carbon composite material comprising such high purity graphite or carbon fiber reinforced carbon composite material as a substrate.
  • Carbonaceous materials are not only excellent in various mechanical characteristics but also advantageous in that they hardly react with metals. Therefore, they are widely used in the semiconductor, machinery and nuclear industries.
  • CaF 2 has come into use for emitting short wavelength excimer laser beams, such as krypton fluoride (248 nm), argon fluoride line (193 nm) and fluorine (157 nm).
  • short wavelength excimer laser beams such as krypton fluoride (248 nm), argon fluoride line (193 nm) and fluorine (157 nm).
  • lenses made of fluorite single crystal CaF 2
  • CaF 2 single crystals are produced by the Bridgman technique or Czochralski (CZ) process.
  • Graphite materials generally contain metal impurities entrapped in pores and between graphite lattices thereof, hence they as such cannot be used in semiconductor manufacturing. Therefore, the applicants have previously proposed, for use in the semiconductor and nuclear industries, high purity graphite materials having a metal impurity (ash) content of 5 ppm or less as a result of treatment of graphite materials with a halogen-containing gas, for instance, for attaining high levels of purity ( JP Kokai No. S64(1989)-18964 ; Japanese Patent Publication (JP Kokoku) No. H06(1994)-35325 ). They have also recently proposed, in JP Kokai 2002-249376 , carbonaceous materials with reduced nitrogen content for use in the manufacture of compound semiconductors.
  • US 5,505,929 discloses an apparatus for manufacturing a high purity graphite material comprising a container capable of being made vacuous or depressurized and in which an induction heating high-frequency coil and a graphite heater are incorporated, the container being provided with a gas discharge pipe and a gas supply pipe. Moreover, a method for manufacturing a high purity graphite material is described. Therein, a carbon material is kept at 800 to 1000 °C usually for 1 to 10 hours by radiation heat, followed by raising the temperature to 2450 - 2500 °C by gradual heating so that the material is graphitised. The internal part of the container is to be kept within 1 - 100 Torr (0.0001 - 0.01 MPa).
  • a halogen gas such as dichlorodifluoromethane is fed while keeping the reduced pressure state. It is preferred to use a compound, in which fluorine and chlorine are included together in one molecule, such as monochlorotrifluoromethane, dichlorodifluoromethane, trichloromonofluoroethane or the like.
  • the temperature in the furnace is further raised and kept at 3000 °C for 10 to 30 hours.
  • the purification can be further improved by largely reducing the container pressure to 10 -2 - 10 -4 Torr (0.01 - 1 Pa) at the temperature of 1800 - 2200 °C on the step of cooling the furnace.
  • An object of the present invention is to provide the high purity, graphite or carbon fiber reinforced carbon composite material which reduced not only oxygen, nitrogen, chlorine, phosphorus and sulfur in pores but also oxygen, nitrogen, chlorine, phosphorus, sulfur and boron which arc bound to carbon atoms in graphite material.
  • the present inventors could find those purification treatment conditions which are suited for the removal of the above-enumerated impurity elements, namely the reductions in contents of carbon atom-bound oxygen, nitrogen, chlorine, phosphorus, sulfur and boron bound to carbon atoms. Based on such and other findings, they have now completed the present invention.
  • the present invention provides a high purity graphite or carbon fiber reinforced carbon composite material having oxygen content of 1 x 10 18 atoms/cm 3 or less analyzed by SIMS (secondary ion mass spectrometry). For instance, it is necessary to reduce the oxygen concentration to a level as low as possible in producing silicon carbide single crystals.
  • SIMS secondary ion mass spectrometry
  • the use of a graphite or carbon fiber reinforced carbon composite material with an oxygen content of 1 x 10 18 atoms/cm 3 or less makes it possible to obtain single crystals having good semiconductor characteristics. More preferably, the oxygen content is 3 x 10 17 atoms/cm 3 or less, most preferably 1 x 10 17 atoms/cm 3 or less.
  • the invention provides a high purity graphite or carbon fiber reinforced carbon composite material having a chlorine content of 1 x 10 16 atoms/cm 3 or less analyzed by SIMS.
  • the graphite or carbon fiber reinforced carbon composite material used as furnace jigs in epitaxial growth of SiC has a chlorine concentration of 5 x 10 15 atoms/cm 3 or less, it becomes possible to markedly decrease the chlorine in the epitaxial growth layer.
  • the chlorine content is more preferably 8 x 10 15 atoms/cm 3 or loss, most preferably 5 x 10 15 atoms/cm 3 or less.
  • the invention provides a high purity graphite or carbon fiber reinforced carbon composite material having a nitrogen content of 5 x 10 18 atoms/cm 3 or less as measured by SIMS.
  • a graphite or carbon fiber reinforced carbon composite material with a nitrogen content of 5 x 10 18 atoms/cm 3 or less makes it possible to markedly reduce the nitrogen concentration in SiC single crystals. More preferably, the nitrogen content is 5 x 10 17 atoms/cm 3 or less, most preferably 5 x 10 16 atoms/cm 3 or less.
  • the invention provides a high purity graphite or carbon fiber reinforced carbon composite material having a phosphorus content of 1 x 10 16 atoms/cm 3 or less as measured by SIMS.
  • a graphite or carbon fiber reinforced carbon composite material with a phosphorus content of 1 x 10 16 atoms/cm 3 or less as jigs for the production of SiC single crystals makes it possible to markedly reduce the phosphorus concentration in the single crystals. More preferably, the phosphorus content is 3 x 10 15 atoms/cm 3 or less, most preferably 1 x 10 15 atoms/cm 3 or less.
  • the invention provides a high purity graphite or carbon fiber reinforced carbon composite material having a sulfur content of 1 x 10 16 atoms/cm 3 or less as measured by SIMS.
  • a sulfur content is 5 x 10 15 atoms/cm 3 or less, most preferably 3 x 10 15 atoms/cm 3 or less.
  • the invention provides a high purity graphite or carbon fiber reinforced carbon composite material having a boron content of 5 x 10 16 atoms/cm 3 or less as measured by SIMS.
  • Boron is one of the major impurities in the production of SiC semiconductors.
  • SiC single crystals with low boron concentration and excellent semiconductor characteristics can be produced.
  • the boron content is 1 x 10 16 atoms/cm 3 or less, most preferably 5 x 10 15 atoms/cm 3 or less.
  • the invention can provide the extremely high purity graphite or carbon fiber reinforced carbon composite material which reduced not only oxygen, nitrogen, chlorine, phosphorus and sulfur contained in pores but also oxygen, nitrogen, chlorine, phosphorus, sulfur and boron readily bound to carbon atoms in carbon materials.
  • the high purity graphite or carbon fiber reinforced carbon composite material of the invention can prevent crystal defects during the manufacturing of SiC single crystals, silicon single crystals, GaN single crystals or CaF 2 single crystals, among others, and therefore can be adequately used in the production of such crystals.
  • it can be used as the material of jigs for the epitaxial growth of SiC, GaN, silicon, etc.
  • the high purity graphite or carbon fiber reinforced carbon composite material of the invention can be used as a substrate material for ceramic coatings such as SiC, boron nitride, tantalum carbide and so on.
  • the high purity graphite or carbon fiber reinforced carbon composite material of the invention is derived from a material, which is extremely purified carbon material defined in the conventional meaning.
  • a material which is extremely purified carbon material defined in the conventional meaning.
  • it is derived, by treatment for purification, from (1) a calcined carbonaceous material prepared by mixing up one or more of finely divided natural graphite, artificial graphite, petroleum coke, coal coke, pitch coke, carbon black and mesocarbon, and a binder such as pitch, coal tar, coal tar pitch or a thermosetting resin, followed by kneading, pulverizing, molding and calcining, or a graphitized carbonaceous material derived therefrom by further graphitizing according to need, (2) a noncrystalline (glassy) carbonaceous material prepared by carbonization of a thermosetting resin such as a phenol resin, (3) a carbon fiber-reinforced, carbon-based composite material produced by the resin char process comprising repetitions of a procedure consisting
  • FIG. 1 A flowchart illustrating the process for producing the high purity graphite or carbon fiber reinforced carbon composite material of the invention is shown in Fig. 1 .
  • the process for producing the high purity graphite or carbon fiber reinforced carbon composite material of the invention comprises the process of purity improvement by treatment in a gaseous atmosphere of halogen or compound thereof, for example chlorine, trichloromethane, dichloromethane, monochloromethane, fluorine, trifluoromethane, difluoromethane, monofluoromethane, monochlorotrifluoromethane, dichlorofluoromethane, trichlorofluorometha ne, monochloroethane, monochlorofluoroethane, monochlorodifluoroethane, monochlorotrifluoroethane, dichloroethane, dichloromonofluoroethane, dichlorodifluoroethane, dichlorotrifluoroethane, trichloroethane, trichloromonofluoroethane, trichlorodifluoroethane or tet
  • the carbonaceous material performed by these high purification process is heated between 1400 and 1600 °C, preferably between 1450 and 1550 °C, in a vacuum furnace at the reduced pressure 100 Pa or lower (preferably 50 Pa or lower) for a period of 5 hours or longer (preferably 10 hours or longer) to thereby eliminate volatile impurities such as nitrogen and oxygen (degassing (nitrogen elimination) process).
  • hydrogen is introduced into the vacuum furnace heated at the temperature between 1400 and 1600 °C (preferably between 1450 and 1550 °C) at the pressure between 100 and 1000 Pa (preferably between 200 and 900 Pa) to thereby eliminate those impurities capable of readily forming volatile hydrides and to hydrogenate the surface of the carbonaceous material so that such impurities as nitrogen (N), oxygen (O), phosphorus (P) and sulfur (S) can hardly adsorb to the treated surface upon release thereof to the atmosphere (hydrogenation process).
  • N nitrogen
  • O oxygen
  • P phosphorus
  • S sulfur
  • the carbonaceous material to be treated is placed in a graphitization furnace heated between 2400 and 2800 °C at atmospheric pressure, and dichlorodifluoromethane is introduced in the furnace.
  • dichlorodifluoromethane is introduced in the furnace.
  • boron (B) and vanadium (V) can be eliminated with effectively.
  • the carbonaceous material is put in a vacuum furnace heated between 2000 °C and 2400 °C, and chlorine (Cl 2 ) and dichlorodifluoromethane arc flowed into the furnace at the pressure between 10000 Pa and 50000 Pa.
  • the flow rate may depend on the amount of the material to be treated.
  • a standard flow rate is generally between 1.67 x 10 -6 and 1.67 x 10 -5 m 3 /sec, per 1kg of the material to be treated 0.1 and 1 NLM/kg). In this process, metal impurities are mainly eliminated in the main.
  • the carbonaceous material is put in a vacuum furnace at a reduced pressure of 100 Pa or lower and heated between 1400 °C and 1600 °C for 10 ⁇ 50 hours. Volatile impurities such as nitrogen and oxygen are eliminated primarily.
  • the graphite or carbon fiber reinforced carbon composite material is kept in the vacuum furnace heated between 1400 °C and 1600 °C for 1 to 10 hours while introducing hydrogen at the pressure between 100 Pa and 1000 Pa.
  • Those impurities which readily form volatile hydrides, are removed and hydrogen is allowed to be adsorbed on the surface of the carbonaceous material under treatment to thereby prevent such impurities as nitrogen (N), oxygen (O), phosphorus (P) and sulfur (S) from adsorbing to the carbonaceous material again.
  • SIMS secondary ion mass spectrometry
  • SIMS is a method of atomic compositional analysis which measures mass of sputtered charged particle from the material surface with primary ions (generally O 2 + , Cs + or Ga + ions) accelerated to several hundred volts to 20 kV.
  • primary ions generally O 2 + , Cs + or Ga + ions
  • the most characteristic feature of SIMS is that all the elements, from 1 H to 238 U, contained in the material can be detected.
  • SIMS is classified to static SIMS and dynamic SIMS according to the quantity of primary ions used for sputtering. The latter, namely dynamic SIMS, was used in evaluating the effects of the invention.
  • the STMS used for determining impurity concentrations in the high purity graphite or carbon fiber reinforced carbon composite material of the invention was CAMECA IMS-3f-4f-4.5f.
  • Different primary ion species were used according to the elements to be measured.
  • O 2 + ions were used as primary ions for boron (B), aluminum (Al), titanium (Ti), vanadium (V), chromium (Cr), iron (Fe) and nickel (Ni), and Cs + ions were used for nitrogen (N), oxygen (O), fluorine (F), phosphorus (P), sulfur (S) and chlorine (Cl).
  • test specimens 7 mm x 7 mm x 1 mm in size, were prepared in advance from each of the samples of the graphite or carbon fiber reinforced carbon composite material and the ceramic coated graphite or carbon fiber reinforced carbon composite material produced by coating on the high purity carbon material as substrate by the thermal CVD method.
  • a carbonaceous material to serve as the base material of the high purity graphite or carbon fiber reinforced carbon composite material of the invention was prepared using an ordinary pressure graphitization and high purification attaining furnace.
  • the heating elements in the atmospheric pressure graphitization and high purification attaining furnace were gradually heated and then a graphitized, isotropic carbon material, 20 mm x 20 mm x 2 mm in size, produced by Toyo Tanso Co., Ltd. was heated at 2450 °C and at 1 atm.
  • Halogen gases or a halogen compound gases for example dichlorodifluoromethane
  • the high purity carbonaceous material obtained in the high purification process was then maintained at 2250 °C in the furnace under reduced pressure, and halogen gases or halogen compound gases, for example dichlorodifluoromethane, was fed again to the furnace. This treatment was carried out for 5 hours while maintaining the furnace pressure at 1000 Pa (ultrahigh purity process).
  • the material was cooled to 1450 °C at the pressure of 10 Pa and then maintained at 1450 °C for 48 hours (degassing (nitrogen elimination) process).
  • the material was maintained at 100 Pa for 1 hour with hydrogen introducing (hydrogenation process).
  • argon gas as a rare gas, was introduced into the furnace and the material was cooled to room temperature. After cooling to room temperature, the material, together was sealed with argon gas in a polyethylene resin film bag and stored so that it might not be exposed to the air.
  • a graphite material was treated in the same high purification process and ultrahigh purification process as in Example 1 and then once taken out of the furnace. It was sealed in a polyethylene resin film bag, and stored with argon gas so that it might not be exposed to the air.
  • This graphite material was taken out of the polyethylene resin film bag and put again in the furnace and heated again to 1450 °C.
  • the furnace inside pressure was reduced to 10 Pa, then heat treatment was carried out for 48 hours (degassing (nitrogen elimination) process). After the predetermined period of heat treatment, the material was maintained at 100 Pa for 1 hour while introducing hydrogen into the furnace (hydrogenation process).
  • Argon gas as a rare gas, was introduced into the furnace, and the material was cooled to room temperature. After cooling to room temperature, the material, together was sealed with argon gas in a polyethylene resin film bag and stored so that it might not be exposed to the air.
  • Example 1 The procedure of Example 1 was carried out in the same manner except that, after reducing the vessel inside pressure to 10 -2 Pa, the degassing (nitrogen elimination) process was carried out at 1450 °C for 24 hours and the hydrogenation process was then carried out at 1450 °C.
  • a base material having the same size as in Example 1 was prepared from a C/C material (carbon fiber-reinforced carbon composite material) produced by Toyo Tanso Co., Ltd. and treated in the same manner as in Example 1.
  • C/C material carbon fiber-reinforced carbon composite material
  • a base material 20 mm x 20 mm x 1 mm in size, was prepared from an exfoliated graphite sheet material produced by Toyo Tanso Co., Ltd. and treated in the same manner as in Example 1.
  • Example 2 The same sample base material as used in Example 1 was treated in the same manner as in Example 1 except that the graphite material after the high purification process was treated in the ultrahigh purification process at 2100 °C for 5 hours and, thereafter, the degassing (nitrogen elimination) process was carried out at 1400 °C for 20 hours and the hydrogenation process was carried out at 1400 °C and at 100 Pa for 1 hour while introducing hydrogen.
  • the material thus obtained was used as the sample of Example 6.
  • Example 7 The same sample base material as used in Example 1 was treated in the same manner as in Example 1 except that the graphite material after the high purification process was treated in the ultrahigh purification process at 2100 °C for 5 hours and, thereafter, the degassing (nitrogen elimination) process was carried out at 1500 °C for 20 hours and the hydrogenation process was carried out at 1500 °C and at 100 Pa for 1 hour while introducing hydrogen. The material thus obtained was used as the sample of Example 7.
  • Example 8 The same graphite material as that obtained in Example 1 through the high purification and ultrahigh purification processes, degassing (nitrogen elimination) process and hydrogenation process was used as a substrate and coated with 100 ⁇ m thickness of SiC by the thermal CVD method. The material thus obtained was used as the sample of Example 8.
  • Example 1 The same sample base material was treated in the same manner as in Example 1 except that the graphite material after the high purification process was subjected neither to the ultrahigh purification process nor the degassing (nitrogen elimination) process but was cooled with nitrogen gas and stored in the atmosphere. The resulting material was used as the sample of Comparative Example 1.
  • Example 1 The procedure of Example 1 was followed in the same manner except that, after reduction of the furnace pressure to 10 Pa, the degassing (nitrogen elimination) process was carried out at 1450 °C for 48 hours and that the hydrogenation process was not carried out. The thus-obtained material was used as the sample of Comparative Example 4.
  • Example 1 The procedure of Example 1 was followed in the same manner except that, after vacuuming pressure to 10 Pa, the degassing (nitrogen elimination) process was carried out at 1300 °C for 48 hours and that the hydrogenation process was carried out at 1300 °C, at 100 Pa for 1 hour while introducing hydrogen.
  • the thus-obtained material was used as the sample of Comparative Example 5.
  • the same graphite material as used in Example 1 was subjected to the ultrahigh purification process, degassing (nitrogen elimination) process and hydrogenation process in the same manner without carrying out the high purification process.
  • the thus-obtained material was used as the sample of Comparative Example 6.
  • Example 1 The procedure of Example 1 was followed in the same manner except that, after vacuuming pressure to 10 Pa, the degassing (nitrogen elimination) process was carried out at 1200 °C for 48 hours. The thus-obtained material was used as the sample of Comparative Example 7.
  • Example 4 The same C/C material (product of Toyo Tanso Co., Ltd.) as used in Example 4 was treated in the same manner as in Comparative Example 1. The thus-obtained material was used as the sample of Comparative Example 8.
  • the impurity concentrations in the graphite materials of Examples 1 to 7 and Comparative Examples 1 to 9 were determined by the SIMS method described hereinabove.
  • the impurity concentrations in the samples of Examples 1 to 7 are summarized in Table 1
  • the impurity concentrations in the samples of Comparative Examples 1 to 9 are summarized in Table 2.
  • the impurity concentrations in the sample of Example 8 and the sample of Comparative Example 10 were also determined by the SIMS method described above.
  • the impurity concentrations in the samples of Example 8 and Comparative Example 10 are summarized in Table 3.
  • Example 1 Example 2
  • Example 3 Example 4
  • Example 5 Example 6
  • Example 7 B 1.5 x 10 15 4.0 x 10 15 4.2 x 10 14 9.8 x 10 16 4.2 x 10 16 9.9 x 10 15 9.7 x 10 15 N 5.0 x 10 18 6.0 x 10 16 ⁇ 4.0 x 10 16 8.9 x 10 15 4.2 x 10 17 2.1 x 10 16 4.3 x 10 16 O 9.5 x 10 16 1.2 x 10 17 8.3 x 10 15 2.8 x 10 17 9.7 x 10 17 1.3 x 10 18 3.0 x 10 17 F 2.2 x 10 14 4.0 x 10 14 2.0 x 10 14 3.0 x 10 14 2.5 x 10 14 2.5 x 10 14 2.5 x 10 14 Al ⁇ 4.0 x 10 13 ⁇ 4.0 x 1013 ⁇ 4,0 x 10 13 ⁇ 4.0 x 10 13 ⁇ 4.0 x 10 13 5.3 x 10 13 ⁇ 4.0 x 10 13 P 2.8 x 10 15 1.7
  • the data in Table 1 and Table 2 indicate that the graphite materials obtained in Examples 1 to 7 through the nitrogen gas elimination process are lower in nitrogen content as compared with the graphite materials of Comparative Examples 1 to 9 respectively. Accordingly, the low-nitrogen-concentration graphite materials of Examples 1 to 7 can be used as tools or jigs in the production of SiC semiconductors and so forth while preventing the occurrence of crystal defects in semiconductor devices such as SiC semiconductors.
  • the graphite material of Example 6 which has a reduced boron concentration as well, can be utilized as a tools or jigs for silicon single crystals in the Czochralski process, for instance, and can thus contribute toward markedly reducing the boron concentration in the product silicon single crystals.
  • graphite materials of Examples 1 to 7 are used as graphite parts to be used in nuclear reactors, for example graphite moderators in nuclear reactors or graphite-made fuel blocks in high-temperature gas-cooled reactors, radioactivity can be suppressed owing to their low impurity concentrations.
  • the data in Table 3 indicate that when the graphite material low in impurity concentrations is used as the base graphite material for SiC coating, the concentrations of impurities, for example boron and nitrogen, in addition to metal impurities, in the SiC layer can be reduced. Accordingly, by using the SiC-coated graphite material of Example 8 as tools or jigs in the manufacture of silicon semiconductors, it becomes possible to reduce the impurity concentrations in epitaxial silicon layers.
  • the invention provides a high purity graphite or carbon fiber reinforced carbon composite material which is reduced in contents of oxygen, nitrogen and chlorine readily binding to carbon atoms and in contents of elements, phosphorus, sulfur and boron, readily binding to carbon atoms upon heating and which can be used in producing single crystals such as semiconductors, a high purity graphite or carbon fiber reinforced carbon composite material for use as a substrate for ceramic layer coating, and a ceramic layer-coated high purity graphite or carbon fiber reinforced carbon composite material.
  • the high purity graphite or carbon fiber reinforced carbon composite material has oxygen content of 1 x 10 18 atoms/cm 3 or less as determined by SIMS.
  • chlorine content is preferably 1 x 10 16 atoms/cm 3 or less as determined by SIMS, and its nitrogen content is preferably 5 x 10 18 atoms/cm 3 or less as determined by SIMS.
  • nitrogen content is preferably 5 x 10 18 atoms/cm 3 or less as determined by SIMS.
  • phosphorus, sulfur and boron contents are preferably not higher than respective specified values.
  • Such a high purity graphite or carbon fiber reinforced carbon composite material is coated with ceramic layer.

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Claims (10)

  1. Hochreines Graphit- oder Kohlefaser-verstärktes Kohlenstoff-Verbundmaterial mit einem durch SIMS bestimmten Sauerstoffgehalt von 1 x 1018 Atomen/cm3 oder weniger.
  2. Hochreines Graphit- oder Kohlefaser-verstärktes Kohlenstoff-Verbundmaterial nach Anspruch 1, welches einen durch SIMS bestimmten Chlorgehalt von 1 x 1016 Atomen/cm3 oder weniger aufweist.
  3. Hochreines Graphit- oder Kohlefaser-verstärktes Kohlenstoff-Verbundmaterial nach Anspruch 1 oder 2, welches einen durch SIMS bestimmten Stickstoffgehalt von 5 x 1018 Atomen/cm3 oder weniger aufweist.
  4. Hochreines Graphit- oder Kohlefaser-verstärktes Kohlenstoff-Verbundmaterial nach einem der Ansprüche 1 bis 3, welches einen durch SIMS bestimmten Phosphorgehalt von 1 x 1016 Atomen/cm3 oder weniger aufweist.
  5. Hochreines Graphit- oder Kohlefaser-verstärktes Kohlenstoff-Verbundmaterial nach einem der Ansprüche 1 bis 4, welches einen durch SIMS bestimmten Schwefelgehalt von nicht mehr als 1 x 1016 Atomen/cm3 aufweist.
  6. Hochreines Graphit- oder Kohlefaser-verstärktes Kohlenstoff-Verbundmaterial nach einem der Ansprüche 1 bis 5, welches einen durch SIMS bestimmten Borgehalt von 5 x 1016 Atomen/cm3 oder weniger aufweist.
  7. Hochreines Graphit- oder Kohlefaser-verstärktes Kohlenstoff-Verbundmaterial nach einem der Ansprüche 1 bis 6 mit einem durch SIMS bestimmten Borgehalt von nicht mehr als 1 x 1016 Atomen/cm3.
  8. Verwendung des hochreinen Graphit- oder Kohlefaserverstärkten Kohlenstoff-Verbundmaterials nach einem der Ansprüche 1 bis 7 bei der Herstellung von Siliciumcarbid-Einkristallen, Silicium-Einkristallen, Galliumnitrid-Einkristallen oder Calciumfluorid-Einkristallen.
  9. Verwendung des hochreinen Graphit- oder Kohlefaserverstärkten Kohlenstoff-Verbundmaterials nach einem der Ansprüche 1 bis 7 als Hilfsmittel oder Geräte beim epitaktischen Züchten von Siliciumcarbid, Galliumnitrid oder Silicium.
  10. Keramisch Schicht-Beschichtetes hochreines Graphit-oder Kohlefaser-verstärktes Kohlenstoff-Verbundmaterial, das ein hochreines Graphit- oder Kohlefaser-verstärktes Kohlenstoff-Verbundmaterial nach einem der Ansprüche 1 bis 7 als ein Substrat der Keramikbeschichtung umfasst.
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US20050079359A1 (en) 2005-04-14
CN101659409B (zh) 2014-05-07
JP2005132711A (ja) 2005-05-26
KR20050035085A (ko) 2005-04-15
US7517516B2 (en) 2009-04-14
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