EP1476905A1 - Memoire rom integree, procede pour faire fonctionner une telle memoire rom, et procede de production d'une telle memoire - Google Patents

Memoire rom integree, procede pour faire fonctionner une telle memoire rom, et procede de production d'une telle memoire

Info

Publication number
EP1476905A1
EP1476905A1 EP03706525A EP03706525A EP1476905A1 EP 1476905 A1 EP1476905 A1 EP 1476905A1 EP 03706525 A EP03706525 A EP 03706525A EP 03706525 A EP03706525 A EP 03706525A EP 1476905 A1 EP1476905 A1 EP 1476905A1
Authority
EP
European Patent Office
Prior art keywords
read
layer
memory according
memory
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03706525A
Other languages
German (de)
English (en)
Inventor
Franz Hofmann
Richard Johannes Luyken
Till Schlösser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of EP1476905A1 publication Critical patent/EP1476905A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H10B63/34—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the vertical channel field-effect transistor type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels

Landscapes

  • Semiconductor Memories (AREA)

Abstract

L'invention concerne une mémoire ROM intégrée qui contient des transistors de sélection comportant chacun un raccordement de drain ainsi qu'une électrode servant à l'amenée d'une tension ou d'un courant. Entre les raccordements de drain et l'électrode se trouve une couche dont la résistance électrique peut être modifiée sous l'effet d'une tension de configuration ou d'un courant de configuration. Cette couche est appliquée selon le procédé "backend".
EP03706525A 2002-02-21 2003-02-17 Memoire rom integree, procede pour faire fonctionner une telle memoire rom, et procede de production d'une telle memoire Withdrawn EP1476905A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10207300A DE10207300B4 (de) 2002-02-21 2002-02-21 Integrierter Festwertspeicher, Verfahren zum Betreiben eines solchen Festwertspeichers sowie Herstellungsverfahren
DE10207300 2002-02-21
PCT/EP2003/001583 WO2003075350A1 (fr) 2002-02-21 2003-02-17 Memoire rom integree, procede pour faire fonctionner une telle memoire rom, et procede de production d'une telle memoire

Publications (1)

Publication Number Publication Date
EP1476905A1 true EP1476905A1 (fr) 2004-11-17

Family

ID=27770884

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03706525A Withdrawn EP1476905A1 (fr) 2002-02-21 2003-02-17 Memoire rom integree, procede pour faire fonctionner une telle memoire rom, et procede de production d'une telle memoire

Country Status (5)

Country Link
US (1) US7307865B2 (fr)
EP (1) EP1476905A1 (fr)
JP (1) JP2005519472A (fr)
DE (1) DE10207300B4 (fr)
WO (1) WO2003075350A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050162895A1 (en) * 2004-01-28 2005-07-28 Kuhr Werner G. Molecular memory arrays and devices
EP1748866B1 (fr) * 2004-04-29 2011-03-09 Zettacore, Inc. Memoire moleculaire et systemes de traitement et procedes de mise en oeuvre
EP2077580B1 (fr) * 2006-11-17 2011-11-30 Panasonic Corporation Élément de mémoire non volatile, dispositif de mémoire non volatile, dispositif semi-conducteur non volatile et procédé de fabrication d'un élément de mémoire non volatile
JP4515538B1 (ja) 2008-12-08 2010-08-04 エンパイア テクノロジー ディベロップメント エルエルシー 半導体記憶デバイスおよびその製造方法
US9520446B2 (en) * 2012-11-12 2016-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Innovative approach of 4F2 driver formation for high-density RRAM and MRAM
FR3029343B1 (fr) * 2014-11-27 2018-03-30 Stmicroelectronics (Rousset) Sas Dispositif compact de memoire de type electriquement effacable et programmable

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4590589A (en) * 1982-12-21 1986-05-20 Zoran Corporation Electrically programmable read only memory
US5231602A (en) * 1990-04-25 1993-07-27 Advanced Micro Devices, Inc. Apparatus and method for improving the endurance of floating gate devices
US5363329A (en) * 1993-11-10 1994-11-08 Eugeniy Troyan Semiconductor memory device for use in an electrically alterable read-only memory
US5812441A (en) 1996-10-21 1998-09-22 Micron Technology, Inc. MOS diode for use in a non-volatile memory cell
US6542397B2 (en) 2001-06-25 2003-04-01 Lucent Technologies Inc. Read only memory structure

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO03075350A1 *

Also Published As

Publication number Publication date
DE10207300A1 (de) 2003-10-09
US7307865B2 (en) 2007-12-11
US20050201187A1 (en) 2005-09-15
JP2005519472A (ja) 2005-06-30
DE10207300B4 (de) 2004-01-29
WO2003075350A1 (fr) 2003-09-12

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