EP1170839A2 - Dispositif à l'émission de lumière à semiconducteur avec géométrie à ruban et avec des revêtements diélectriques de chalgenide - Google Patents

Dispositif à l'émission de lumière à semiconducteur avec géométrie à ruban et avec des revêtements diélectriques de chalgenide Download PDF

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EP1170839A2
EP1170839A2 EP01304700A EP01304700A EP1170839A2 EP 1170839 A2 EP1170839 A2 EP 1170839A2 EP 01304700 A EP01304700 A EP 01304700A EP 01304700 A EP01304700 A EP 01304700A EP 1170839 A2 EP1170839 A2 EP 1170839A2
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mesa
layer
laser
chalcogenide glass
coating
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EP1170839A3 (fr
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Federico Capasso
Alfred Yi Cho
Claire Gmachl
Albert Lee Hutchinson
Harold Yoonsung Hwang
Roberto Paiella
Arthur Mike Sergent
Deborah Lee Sivco
James Nelson Baillargeon
Alessandro Tredicucci
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Nokia of America Corp
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Lucent Technologies Inc
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
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    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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    • H01S5/227—Buried mesa structure ; Striped active layer
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    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
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    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers
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    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
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    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2227—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties special thin layer sequence

Definitions

  • This invention relates generally to mesa geometry semiconductor light emitters (e.g., lasers, spontaneous emission sources) and, more particularly, to intersubband (ISB) ridge waveguide (RWG) light emitters.
  • IOB intersubband
  • RWG ridge waveguide
  • the class of semiconductor light emitters includes a subset known as mesa geometry edge emitters, which in turn includes a particular design known as RWG light emitters.
  • RWG devices typically include an active region and upper and lower cladding regions that bound the active region and form a waveguide.
  • the term ridge waveguide takes its name from an elongated mesa that extends longitudinally along the light propagation axis (e.g., the resonator axis of a laser) and vertically (in cross-section) through at least the upper cladding region and typically also the active region.
  • the mesa provides both lateral current and optical confinement.
  • a dielectric layer e.g., SiN x or SiO 2
  • a metal layer over the dielectric layer and the exposed top of the mesa.
  • the metal layer typically extends along the sidewalls of the mesa and down to the level of the active region. While the metalization along the side walls and the bottom of the mesa is generally not needed for the basic functionality of the device (only the stripe geometry contact on the top of the mesa is needed), in practice the metal is frequently necessary in order to provide enough area to apply external wiring to the top contact and to provide sufficient conductivity to safely guide the current to the contact area on top of the mesa.
  • RWG devices may be used as lasers or as spontaneous emission sources (e.g., LEDs).
  • the performance of RWG light emitters is a function of many parameters including especially the wavelength of the emission, the temperature of operation, the applied voltage, the width of the mesa, the effective refractive index of the waveguide, the refractive index and the dielectric strength of the dielectric layer, and the losses introduced by the top metal electrode and by the dielectric layer.
  • ISB lasers in particular quantum cascade (QC) lasers, that operate at center wavelengths in the mid-IR range of about 3-19 ⁇ m.
  • QC lasers quantum cascade (QC) lasers
  • These lasers tend to be relatively high voltage devices (e.g., 6-10 V) with higher voltages being required for devices that have a larger number of cascaded stages or that operate at shorter wavelengths.
  • the mesa geometry provides lateral current confinement, but the exposed sidewalls of the mesa are typically covered with a dielectric layer (e.g., CVD-deposited SiN x or SiO 2 ), as discussed above, that is used not only to define the stripe geometry electrode but also to improve heat removal from the mesa (as compared to a mesa that interfaces with air or a vacuum).
  • a dielectric layer e.g., CVD-deposited SiN x or SiO 2
  • This configuration presents two problems: (1) the metal electrode introduces optical loss, which increases the threshold current density of the laser, and (2) the dielectric layer is subject to breakdown, especially under high voltage/high power operating conditions.
  • the dielectric layer could be made thicker to increase its breakdown voltage, and thereby allow for higher voltage/power operation, but in practice thicker dielectric layers are not feasible due to the intrinsic stress/strain of CVD-deposited SiN x or SiO 2 . Moreover, even though a thicker oxide/nitride would reduce the penetration of the optical field into the overlying metal electrode, it still would be inadvisable in the wavelength range of about 8.5-10.5 ⁇ m where the absorption of these dielectrics increases significantly.
  • the top metal electrode introduces optical loss in the RWG in the lateral direction, which we have found induces self-mode-locking (self-pulsation) via a self-focusing process.
  • Self-mode-locking can be disadvantageous, particularly if a continuous wave (CW) output or an induced, controlled pulsation is desired. This problem is even more severe in higher power operation and in narrower mesa RWG configurations.
  • CW continuous wave
  • the mesa In order to increase the maximum temperature at which CW operation is possible in ISB lasers, the mesa should be relatively narrow (to insure relatively large surface-to-volume ratio) and the mesa coatings should provide efficient lateral heat conduction through the mesa sidewalls. However, if the coating either introduces significant optical loss, or fails to confine the optical mode strongly, or provides inadequate heat conduction, then the advantages of a narrow ridge may be dissipated.
  • fine-tuning of the Bragg wavelength can be made only via the effective refractive index of the material penetrated by the optical mode. Temperature affects this refractive index, but once the device temperature is set by the application or other device-related factors, the effective refractive index can be further changed only by altering the refractive index of the sidewall coating, but then only if the mesa is relatively narrow (e.g., a few micrometers). However, as discussed above, use of a narrow mesa has been hindered by the increased optical loss in the top metal electrode.
  • a mesa geometry semiconductor light emitter includes on the sidewalls a dielectric coating that comprises a chalcogenide (CG) glass.
  • CG chalcogenide
  • CG glasses are compatible with current technology used in the fabrication of ISB light emitters.
  • 12-stage, GaInAs/AlInAs QC lasers operating at about 8 ⁇ m have been coated with Ge 0.25 Se 0.75 glass and have exhibited a 30-40 K increase in the maximum CW operating temperature from about 130 K to about 170 K.
  • the CG glass coating is sufficiently thick to prevent any significant penetration of optical radiation into the metal electrode that overlays the coating and to provide significant waveguiding of the radiation.
  • mesa geometry light emitters include a multi-layered coating that comprises a relatively thin, high refractive index first layer on the sidewalls of the mesa and relatively thicker, lower refractive index second CG layer on the first layer so as to improve the confinement of the optical mode to the mesa.
  • mesa geometry light emitters include a multi-layered coating that comprises alternating CG layers of different refractive index that form a Bragg reflector or an equivalent (such as a chirped grating) on the sidewalls.
  • the width of the mesa is modulated along the longitudinal axis so as to form Bragg gratings in the sidewalls to increase the surface-to-volume ratio and possibly enhance feedback for the fundamental longitudinal mode.
  • CG coatings are then deposited over the gratings.
  • an ISB semiconductor light emitter/source 10 comprises a substrate 14 and an epitaxial region 13 grown thereon.
  • the epitaxial region includes a core region 12 sandwiched between an upper cladding region 17 and the substrate 14 that serves as a lower cladding region.
  • the core region includes an active region 12.1 sandwiched between a pair of regions 12.2 and 12.3, each having a refractive index that is high relative to that of the cladding regions.
  • a relatively high conductivity contact-facilitating layer 19 is typically formed on top of the upper cladding region 17.
  • the epitaxial region 13 is illustratively formed in the shape of a mesa or trapezoid typical of ridge waveguide laser structures.
  • the mesa may be shallow-etched so as to stop at the top of the active region 12.1, or, as shown, it may be deep-etched so that the mesa extends through the active region.
  • the use of a mesa advantageously provides significant optical and current confinement that, in turn, enables the devices, when functioning as lasers, to operate with relatively low threshold current.
  • An electrically insulating, low optical absorption region 16 is formed over the top of the device and along the sidewalls of the mesa. It is patterned to form an opening that exposes a portion of the top of the mesa.
  • a first electrode 18 is formed over the insulating region 16 and in the opening so as to contact the exposed portion of the contact-facilitating layer 19, and a second electrode 22 is formed on the bottom of the substrate 14.
  • the upper cladding region may be replaced by a surface plasmon waveguide structure as described by Sirtori et al., Optics Lett., Vol. 23, No. 17, pp. 1366-1368 (Sept. 1998), which is incorporated herein by reference.
  • a lower cladding region separate from the substrate, may be formed between the substrate and the active region.
  • light emitters of this type are fabricated from Group III-V compound semiconductors; e.g., GaInAs/AlInAs, GaAs/AlGaAs and others.
  • the Drive circuitry is coupled across the electrodes in order to provide an external voltage bias and to supply pumping energy (e.g., electric current) to the device of sufficient magnitude to generate light.
  • the emitter operates as an incoherent, spontaneous emission source (akin to an LED), or it operates as a coherent, stimulated emission source. In the latter case, when provided with optical feedback, the source may function as a laser.
  • Suitable optical feedback is typically provided by an optical cavity resonator formed, for example, by cleaved crystal facets, distributed feedback (DFB) gratings, distributed Bragg reflectors (DBRs), or a combination of them.
  • the cladding regions may be omitted, especially if they absorb light at the operating wavelength of the device.
  • ISB active region includes a single stage, non-cascaded device of the type described in a paper by C. Gmachl et al., Appl. Phys. Lett., Vol. 73, No. 26, pp. 3380-3382 (Dec. 1998), which is incorporated herein by reference.
  • the term also includes a multiple stage, cascaded device of the type described in the F. Capasso et al., Solid State Communications, Vol. 102, No. 2-3, pp. 231-236 (1997) and J. Faist et al., Science, Vol. 264, pp.
  • RT regions which include quantum well regions interleaved with barrier regions, as well as the I/R regions each comprise a multiplicity of semiconductor layers. At least some of the layers of each I/R region are doped, but in any case the I/R regions as well as the RT regions are unipolar.
  • ISB active region is intended to embrace both diagonal lasing transitions as well as vertical lasing transitions.
  • Diagonal transitions involve radiative transitions between upper and lower laser energy levels or states where the wave functions corresponding to the levels are substantially localized in different quantum wells of the same RT region. See, also US Patent No. 5,457,709, which is incorporated herein by reference. On the other hand, in the case of vertical transitions the excited and lower energy states are both substantially in the same quantum well of a single RT region. See, US Patent No. 5,509,025, which is also incorporated herein by reference. Both types of lasing transitions are also described in the article by F. Capasso et al., supra.
  • the I/R regions of a vertical transition QC laser may include minibands and a minigap between the minibands to form an effective Bragg reflector for electrons in the excited state and to ensure swift electron escape from the lower states.
  • Our invention is also applicable to well-known Type II QC lasers that also operate in the mid-IR range of wavelengths.
  • the source may be designed to operate at a single center wavelength, as in the papers discussed above, or it may operate in multiple wavelengths as described, for example, by A. Tredicucci et al., Nature, Vol. 396, pp. 350-353 (Nov. 1998), which is incorporated herein by reference.
  • the wavelength of operation is typically in the range of about 3-19 ⁇ m depending on the particular design of the active region.
  • SL laser superlattice
  • the wavefunctions of the laser levels are spread over a multiplicity of quantum wells within each RT region.
  • Laser action is achieved through unipolar injection by inter miniband tunneling.
  • Pre-biased SLs are another type of ISB laser embraced by our invention. See, A. Tredicucci et al., Appl. Phys. Lett., Vol. 73, No. 15, pp. 3101-3103 (Oct. 1998), which is also incorporated herein by reference.
  • the electrically insulating, low optical absorption region 16 comprises a chalcogenide glass; that is, an amorphous semiconductor compound that includes a Group VI element, either S, Se or Te, but does not include any significant amount of oxygen.
  • the region may be a single layer of a chalcogenide glass, or it may comprise multiple layers at least one of which is a chalcogenide glass.
  • chalcogenide glasses include low absorption in the mid-IR range and the ability to fabricate relatively thick layers that are relatively free of stress/strain. Thick dielectric layers give rise to high dielectric strength, which in turn enables high power/high temperature operation of the emitter/source 10, especially as a laser. In addition, these glasses do not introduce loss into the waveguiding process, and hence ISB lasers incorporating them do not exhibit self-mode-locking. Moreover, in a laser chalcogenide glass layers provide optical confinement without increasing the threshold current density for lasing, and provide efficient heat conduction through the sidewalls of the mesa.
  • chalcogenide glass also gives rise to another aspect of our invention - we are able to design our ISB mesa geometry lasers with relatively narrow mesas (e.g., 3-5 ⁇ m, as measured at the center of the waveguide core).
  • This feature gives rise to three advantages: (1) First, it enables us to increase the surface-to-volume ratio of the mesa, which enhances the removal of heat from the active region and thereby permits CW operation at higher temperatures; (2) Second, it permits tuning of DFB ISB mesa geometry lasers even after the grating has been formed on the top surface of either the core or the waveguide.
  • n eff is the effective refractive index of the waveguide and L g is the grating period.
  • Tuning depends on the ability to alter either or both of these two parameters.
  • n eff the silicon oxide/nitride dielectrics used in the prior art for insulating layer 16 would alter n eff if the mesa were sufficiently narrow for the optical field to see the dielectric material.
  • the lasing threshold would be significantly increased because the thin silicon oxide/nitride dielectrics are overlaid with very lossy metal layers (and are also lossy themselves in the wavelength range of about 8.5-10.5 ⁇ m).
  • our chalcogenide glasses have relatively low loss and hence permit the use of narrow mesas, which in turn allows for fine tuning of n eff by incorporating the refractive index of the chalcogenide into the effective refractive index of the waveguide; and (3) Third, narrow mesas and hence correspondingly narrow waveguides give rise to lower optical gain for higher order transverse optical modes (and may prohibit them altogether), which in turn is advantageous for fundamental transverse mode operation.
  • the glass comprises a binary compound such as Ge x Se 1-x , where x ⁇ 0.4 approximately.
  • Ge tends to coalesce and the glass is more difficult to form homogeneously.
  • the glass may comprise As x S 1-x , where x ⁇ 0.4.
  • Commercially available alternatives include ternary compounds such as Ge x As y Se 1-x-y , where x ⁇ 0.33 and y ⁇ 0.12, and Ge x Sb y Se 1-x-y , where x ⁇ 0.28 and y ⁇ 0.12.
  • the thickness of the chalcogenide glass layers depends primarily on the wavelength of operation (shorter wavelengths permit the use of thinner layers), the width of the mesa (narrower mesas require thicker layers), and the refractive index of the glass layer (a lower index enables the use of thinner layers).
  • the glass layer is about 3-4 ⁇ m thick for an ISB laser generating radiation at a wavelength of about 8 ⁇ m and having a mesa width of about 8 ⁇ m.
  • the CG layer is sufficiently thick to prevent any significant penetration of the optical radiation into the lossy, overlying metal electrode and to provide significant waveguiding of the radiation.
  • the chalcogenide glass layer could fill in the valleys formed by the mesa so that the metal layer would be essentially planar with the top of the mesa.
  • this design would make it more difficult to pattern the thick glass layer; i.e., to form a window for the stripe geometry contact on top of the mesa.
  • Chalcogenide glass layers may be deposited by several different fabrication techniques.
  • PPA pulsed laser ablation
  • the use of PLA to deposit chalcogenides specifically is described by K. E. Youden et al., Appl. Phys. Lett., Vol. 63, No. 12, pp. 1601-1603 (1993), which is incorporated herein by reference.
  • the glass layers are deposited at room temperature in order to reduce stress/strain that would likely be built up in them if they were deposited at a higher temperature and then cooled to room temperature.
  • RTA rapid thermal annealing
  • Alternative deposition techniques include sputtering from single source target that contains pre-mixed constituents of the glass or evaporation from a multi-pocket source in which the individual constituents are placed in separate crucibles. Sputtered chalcogenide glass layers are described by S. Ramachandran et al., Appl. Phys. Lett., Vol. 74, No. 1, pp. 13-15 (1999), which is incorporated herein by reference.
  • the electrode 18 Since the electrode 18 is deposited on the chalcogenide glass layer 16, it should be made of a metal that adheres well to the glass. On GeSe glass we have used Ti/Au as well as Cr but prefer the former.
  • FIG. 2 shows an alternative embodiment of our invention that enhances optical confinement.
  • the insulating region 16' is a multi-layered structure that includes at least one chalcogenide layer.
  • the region 16' comprises a relatively thin, high refractive index layer 16.1 formed on the mesa and relatively thicker, lower refractive index CG layer 16.2 formed on layer 16.1.
  • the effective refractive index of the mesa is between the refractive indices of layers 16.1 and 16.2, and the refractive index of layer 16.1 is higher than that of layer 16.2.
  • the inner layer 16.1 need not be a chalcogenide glass; it might be a Ge layer, for example.
  • Electrode 18 is formed on layer 16.2.
  • FIG. 3 shows another embodiment for enhancing optical confinement.
  • the insulating region 16" comprises a Bragg reflector; that is, a multi-layered structure in which two different chalcogenide glass layers (having two different refractive indices) alternate. Their refractive indices and thicknesses satisfy the well-known Bragg conditions or the equivalent (e.g. the conditions for a well-known chirped grating).
  • FIG. 4 shows yet another embodiment for increasing the surface-to-volume ratio of the mesa and thereby to enhance the extraction of heat from active region.
  • the laser is shown in top view, and the sidewalls of the mesa are corrugated along the axis of light propagation 30.
  • the corrugation is formed by suitable etching techniques that modulate the width of the mesa in a direction transverse to axis 30 and essentially in the plane of the layers of the mesa. If the corrugation undesirably increases scattering losses, it can be made with Bragg periodicity matched to the center wavelength of the laser.
  • the corrugation would be made with a periodicity given by M ⁇ g /2n eff , where ⁇ g is the wavelength at which the laser has maximum gain, n eff is the effective refractive index of the waveguide, and M is any non-zero, positive integer.
  • ⁇ g is the wavelength at which the laser has maximum gain
  • n eff is the effective refractive index of the waveguide
  • M is any non-zero, positive integer.
  • This example describes a Group III-V compound semiconductor QC laser in accordance with one embodiment of our invention.
  • Various materials, dimensions and operating conditions are provided by way of illustration only and, unless otherwise expressly stated, are not intended to limit the scope of the invention.
  • the basic design of the QC lasers we used in this experiment is shown in FIG. 1 and described by C. Gmachl et al., IEEE J. Selected Topics in Quantum Electron., Vol. 5, No. 3, pp. 808-816 (1999), which is incorporated herein by reference.
  • the core region included 12 stages, and the active region included three quantum wells in which the lasing emission was a vertical transition at a center wavelength of about 8 ⁇ m.
  • the mesa was 8 ⁇ m wide and about 2.7 mm long.
  • the operating voltage was about 3.5 V.
  • the chalcogenide glass layer 16 comprised a layer of Ge 0.25 Se 0.75 that was about 3.5 ⁇ m thick. It was deposited by PLA using a KrF excimer laser that generated pulses having the following properties: wavelength of 248 nm, repetition rate of 10 Hz, and energy density of about of 2-4 J/cm 2 . The sample was at room temperature, and the peak deposition rate was I ⁇ m/10 min.
  • the best CW operating temperature exhibited by our lasers was about 170 K, about 30-40 K higher than prior art QC lasers using thin silicon nitride (or alternatively silicon dioxide) layers and conventional substrate-side-down mounting technology.
  • we expect a further increase in the operating temperature would be achieved using the epi-side down mounting technology described by C. Gmachl et al., IEEE J. Photon. Tech. Lett., Vol. 11, No. 11, pp. 1369-1371 (1999) and by J. N. Baillargeon et al. in copending patent application Serial No. 09/448,929 filed on November 24, 1999 and assigned to the assignee hereof, both of which are incorporated herein by reference.
  • FIG. 5a A spectrum obtained for this laser at three different operating temperatures (150 K, 160 K and 170 K) is shown in FIG. 5a.
  • FIG. 5b Another advantage of our laser, reduced threshold for lasing, is shown in FIG. 5b.
  • the I-V curve shows that our laser had a low temperature, pulsed threshold current density of about 2.6 kA/cm 2 , a clear improvement over the 3 kA/cm 2 threshold of lasers described by C. Gmachl et al. in IEEE J. Selected Topics in Quantum Electron., supra.
  • FIG. 6 shows the low temperature I-V and optical power characteristics of a pulsed, 100-stage QC laser in accordance with another example of our invention.
  • the laser had a narrow mesa about 5 ⁇ m wide covered with a Ge 0.25 Se 0.75 glass layer about 5 ⁇ m thick. Otherwise, the design was essentially identical to that described by C. Gmachl et al. in IEEE J. Selected Topics in Quantum Electron., supra. The large number of stages resulted in an operating voltage of 18 V, which is acceptable if high optical power is desired.
  • FIG. 6 (dashed line) shows an average peak slope efficiency of ⁇ 1.6 W/A and a maximum peak slope efficiency of ⁇ 2 W/A in pulsed operation.
  • the latter are very attractive and result from a combination of a low loss waveguide, the large number of stages, and effective current confinement.
  • the use of the chalcogenide glass layer was largely responsible for the low loss of the waveguide, and it enabled us to use a narrow mesa, which in turn provided effective current confinement.

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2385462A (en) * 2002-02-15 2003-08-20 Denselight Semiconductors Pte A semiconductor laser structure
DE102006013442A1 (de) * 2006-03-17 2007-09-20 Humboldt-Universität Zu Berlin Halbleiterlaser und Verfahren zu seiner Herstellung

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1130724A1 (fr) * 2000-03-03 2001-09-05 Alpes Lasers Laser à cascade quantique et procédé pour la fabrication d'un tel laser
US20020097471A1 (en) * 2001-01-22 2002-07-25 Bethea Clyde George Data transmission via direct modulation of a mid-IR laser
US6728282B2 (en) * 2001-06-18 2004-04-27 Lucent Technologies Inc. Engineering the gain/loss profile of intersubband optical devices having heterogeneous cascades
KR100446615B1 (ko) * 2001-10-09 2004-09-04 삼성전자주식회사 반도체 레이저 다이오드 및 그 제조방법
JP3878868B2 (ja) 2002-03-01 2007-02-07 シャープ株式会社 ＧａＮ系レーザ素子
US7103080B2 (en) * 2002-03-04 2006-09-05 Quintessence Photonics Corp. Laser diode with a low absorption diode junction
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JP4317357B2 (ja) * 2002-11-18 2009-08-19 シャープ株式会社 半導体レーザ素子およびその製造方法
US7199398B2 (en) * 2002-11-20 2007-04-03 Sharp Kabushiki Kaisha Nitride semiconductor light emitting device having electrode electrically separated into at least two regions
US7010010B2 (en) 2003-06-19 2006-03-07 Lucent Technologies, Inc. Broadband cascade light emitters
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US7561770B2 (en) * 2007-07-30 2009-07-14 Hewlett-Packard Development Company, L.P. Microresonator systems and methods of fabricating the same
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS609187A (ja) * 1983-06-29 1985-01-18 Fujitsu Ltd 半導体発光装置
JPS6041280A (ja) * 1984-07-20 1985-03-04 Hitachi Ltd 半導体レ−ザ
JPS63153882A (ja) * 1986-12-17 1988-06-27 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPH04192484A (ja) * 1990-11-26 1992-07-10 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
JPH07321406A (ja) * 1994-05-30 1995-12-08 Furukawa Electric Co Ltd:The 半導体レーザ装置
JPH10173285A (ja) * 1996-12-09 1998-06-26 Pioneer Electron Corp 分布帰還型半導体レーザ素子及びその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4230997A (en) * 1979-01-29 1980-10-28 Bell Telephone Laboratories, Incorporated Buried double heterostructure laser device
JPH0722216B2 (ja) * 1986-02-27 1995-03-08 オムロン株式会社 半導体レ−ザ
US4920078A (en) * 1989-06-02 1990-04-24 Bell Communications Research, Inc. Arsenic sulfide surface passivation of III-V semiconductors
JPH0585769A (ja) * 1991-09-25 1993-04-06 Hoya Corp 赤外線透過用材料
JPH06321571A (ja) * 1993-05-17 1994-11-22 Matsushita Electric Ind Co Ltd 赤外光透過ガラスファイバーの製造法
JPH0750448A (ja) * 1993-08-04 1995-02-21 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法
US5457709A (en) 1994-04-04 1995-10-10 At&T Ipm Corp. Unipolar semiconductor laser
US5509025A (en) 1994-04-04 1996-04-16 At&T Corp. Unipolar semiconductor laser
JP3097947B2 (ja) * 1995-03-06 2000-10-10 日本板硝子株式会社 カルコゲナイドガラスファイバ
JPH08325032A (ja) * 1995-05-29 1996-12-10 Hoya Corp カルコゲナイドガラスファイバー
US6055254A (en) * 1998-09-23 2000-04-25 Lucent Technologies Inc. Quantum cascade light emitter with pre-biased internal electronic potential

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS609187A (ja) * 1983-06-29 1985-01-18 Fujitsu Ltd 半導体発光装置
JPS6041280A (ja) * 1984-07-20 1985-03-04 Hitachi Ltd 半導体レ−ザ
JPS63153882A (ja) * 1986-12-17 1988-06-27 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPH04192484A (ja) * 1990-11-26 1992-07-10 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
JPH07321406A (ja) * 1994-05-30 1995-12-08 Furukawa Electric Co Ltd:The 半導体レーザ装置
JPH10173285A (ja) * 1996-12-09 1998-06-26 Pioneer Electron Corp 分布帰還型半導体レーザ素子及びその製造方法

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
EL YUMIN S ET AL: "MONOLITHIC INTEGRATION OF GAINASP/INP COLLIMATING GRIN LENS WITH TAPERED WAVEGUIDE ACTIVE REGION" PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS. HOKKAIDO, MAY 9 - 13, 1995, NEW YORK, IEEE, US, vol. CONF. 7, 9 May 1995 (1995-05-09), pages 721-724, XP000630704 ISBN: 0-7803-2148-0 *
GMACHL C ET AL: "DEPENDENCE OF THE DEVICE PERFORMANCE ON THE NUMBER OF STAGES IN QUANTUM-CASCADE LASERS" IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, IEEE SERVICE CENTER, US, vol. 5, no. 3, May 1999 (1999-05), pages 808-816, XP000930563 ISSN: 1077-260X *
PATENT ABSTRACTS OF JAPAN vol. 009, no. 118 (E-316), 23 May 1985 (1985-05-23) & JP 60 009187 A (FUJITSU KK), 18 January 1985 (1985-01-18) *
PATENT ABSTRACTS OF JAPAN vol. 009, no. 165 (E-327), 10 July 1985 (1985-07-10) & JP 60 041280 A (HITACHI SEISAKUSHO KK), 4 March 1985 (1985-03-04) *
PATENT ABSTRACTS OF JAPAN vol. 012, no. 414 (E-677), 2 November 1988 (1988-11-02) & JP 63 153882 A (MATSUSHITA ELECTRIC IND CO LTD), 27 June 1988 (1988-06-27) *
PATENT ABSTRACTS OF JAPAN vol. 016, no. 513 (E-1283), 22 October 1992 (1992-10-22) -& JP 04 192484 A (MITSUBISHI ELECTRIC CORP), 10 July 1992 (1992-07-10) *
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 04, 30 April 1996 (1996-04-30) & JP 07 321406 A (FURUKAWA ELECTRIC CO LTD:THE), 8 December 1995 (1995-12-08) *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 11, 30 September 1998 (1998-09-30) -& JP 10 173285 A (PIONEER ELECTRON CORP), 26 June 1998 (1998-06-26) *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2385462A (en) * 2002-02-15 2003-08-20 Denselight Semiconductors Pte A semiconductor laser structure
DE102006013442A1 (de) * 2006-03-17 2007-09-20 Humboldt-Universität Zu Berlin Halbleiterlaser und Verfahren zu seiner Herstellung

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