EP1101389B1 - Procede permettant de former un circuit integre comprenant une cavite dans une couche de materiau et circuit integre fabrique selon ledit procede - Google Patents

Procede permettant de former un circuit integre comprenant une cavite dans une couche de materiau et circuit integre fabrique selon ledit procede Download PDF

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Publication number
EP1101389B1
EP1101389B1 EP99945888A EP99945888A EP1101389B1 EP 1101389 B1 EP1101389 B1 EP 1101389B1 EP 99945888 A EP99945888 A EP 99945888A EP 99945888 A EP99945888 A EP 99945888A EP 1101389 B1 EP1101389 B1 EP 1101389B1
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EP
European Patent Office
Prior art keywords
recess
layer
produced
material layer
sacrificial layer
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP99945888A
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German (de)
English (en)
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EP1101389A2 (fr
Inventor
Robert Aigner
Klaus-Günter Oppermann
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Infineon Technologies AG
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Infineon Technologies AG
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Publication of EP1101389A2 publication Critical patent/EP1101389A2/fr
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Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers

Definitions

  • the invention relates to a method for producing an integrated circuit arrangement comprising a cavity in a material layer, as well as an integrated circuit arrangement produced by the method.
  • such a circuit arrangement comprises a CMOS microphone, in which a depression forms a cavity, the so-called backside volume, above which a membrane is arranged which is set in vibration by sound waves.
  • CMOS microphone in which a depression forms a cavity
  • backside volume above which a membrane is arranged which is set in vibration by sound waves.
  • the vibrations are converted into electrical signals.
  • a first microphone is described in which a recess serving as backside volume is generated in a first silicon substrate.
  • a perforated cover layer and above a membrane are produced in a second silicon substrate.
  • the first silicon substrate is bonded to the second silicon substrate.
  • a capacitance is formed by the lid layer and the first silicon substrate. Since the recess and the cover layer are produced in separate substrates, the process cost is very high. The bonding of the substrates requires high temperatures, which can affect process safety.
  • the cover layer and the recess are produced in a single substrate.
  • the recess is filled with a sacrificial layer.
  • a perforated cover layer and above a membrane is produced. Through an opening at the edge of the membrane, the sacrificial layer is then removed by etching.
  • the thickness of a conformally deposited layer must be at least the depth of the depression in order to fill the depression through the layer.
  • the corresponding recesses usually have the dimensions described.
  • the second microphone Since the second microphone is filled with the recess during the manufacturing process by deposition of the sacrificial layer, it is flat in contrast to the recess of the first microphone.
  • the backside volume of the second microphone is correspondingly smaller than that of the first microphone.
  • micromechanical components such as rotation rate sensors or acceleration sensors having arranged in cavities movable structures for which the greatest possible freedom of movement is sought.
  • micromechanical components such as rotation rate sensors or acceleration sensors having arranged in cavities movable structures for which the greatest possible freedom of movement is sought.
  • DE 195 09 868 A1 a production process for such micromechanical components is described.
  • This publication discloses an integrated circuit arrangement according to the preamble of claim 4.
  • a lower sacrificial layer and above a structural layer are produced and patterned, whereby a structure surrounded by a depression is produced.
  • the recess is filled by deposition of an upper sacrificial layer over which a cover layer is applied.
  • etch holes in the cap layer the sacrificial layers are removed and the recess forms part of a cavity in which the structure can move.
  • the acceleration sensor or the rotation rate sensor vibrations or rotations are detected with the aid of the structure, which can be set into lateral oscillations.
  • the cover layer serves to protect the circuit arrangement.
  • the sensitivity of the acceleration sensor or yaw rate sensor is greater the thicker the structure, i. the deeper the depression is.
  • the invention is based on the problem of specifying a production method in which a filled, at least a few microns deep recess can be produced in a material layer having a horizontal cross section in which at least one circular surface with a diameter of a few microns fits. Furthermore, an integrated circuit arrangement produced by the production method should be specified.
  • At least one first structure and at least one second structure are produced in a region of the material layer provided for the depression, which adjoin one another laterally and form a filling of the depression, and in which each of its parts has respective opposing flank parts whose spacing is smaller than about half of a depth of the recess.
  • the recess is not initially produced as in the prior art and then filled in one step, which is why the deposition of a thick layer with all its disadvantages is avoided.
  • the method according to the invention makes it possible to produce filled deep depressions with large horizontal cross sections.
  • Such a method is advantageous for any technical field in which pits are filled by default with substantially conformal layers.
  • One such area is, for example, semiconductor process technology.
  • the described dimensions of the first structure and the second structure enable the formation of these structures by method steps that are independent of the depth of the recess.
  • the first structure At least one narrow depression is initially produced in a region of the material layer provided for the depression by removing a portion of the material layer.
  • the narrow recess has a smaller horizontal cross section than the recess to be formed and forms part of the recess to be created.
  • edge-forming layer-like parts of the first structure are produced, which are laterally thickened until the parts collide and thereby form the first structure. An interface between the abutting parts is thus located inside the first structure.
  • the first structure will either be in the narrow recess or generated outside the narrow pit.
  • the second structure is created by first producing flanking layered portions of the second structure that are laterally thickened until the pieces collide to form the second structure. By creating the first structure and the second structure reaching to the bottom of the well, the filled well is formed.
  • the first structure and the second structure are created in respective narrow recesses which are filled by depositing a substantially conformal filling layer.
  • the filling layer is initially formed on the flanks of the narrow depression, where it forms the flank-forming layer-like parts of the structures. In the further course of the deposition, these parts thicken laterally towards the center of the narrow depression until opposite of the parts collide and the narrow depression is filled. Due to the small spacing of the flank parts from one another, the minimum thickness of the filling layer is determined by this distance and not by the depth of the narrow depression. It is only half of this distance.
  • the filling layer may therefore have a substantially smaller thickness than a thickness of a layer which would be required to fill the entire recess in one step.
  • the first structure is meandering and winds through the depression.
  • the second structure is also meandering, for example.
  • For the second structures correspondingly many narrow recesses are generated.
  • the first structure may be created in the narrow cavity by filling the narrow cavity by substantially conformally depositing a first fill layer. Subsequently, a further narrow depression is produced by removing the parts of the material layer arranged between flanks of the first structure.
  • the second structure is created by filling the further narrow depression by substantially compliant deposition of a second fill layer.
  • the narrow depression can be produced by etching the material layer selectively to the first filling layer.
  • the above-mentioned parts of the first filling layer can be removed by masked etching.
  • the first filling layer is chemically mechanically polished until the material layer is exposed. In this case, a mask covers outside of the recessed portion of the material layer in the formation of the narrow recess.
  • the filling of the depression serves as a sacrificial layer and is removed in a later process step.
  • a lid structure is created which lies completely outside the well and into which an opening is made.
  • the first structure and the second structure are removed by etching, whereby the recess forms a cavity.
  • the first structure and the second structure consist of the same material.
  • the removal can then take place in an etching step. If the etching step is isotropic, then it is advantageous if the first structure and the second structure are selectively etchable to the material layer.
  • a movable structure can be generated.
  • a lower sacrificial layer is applied and patterned on a semiconductor substrate.
  • the material layer is applied.
  • the creation of the filled recess creates the structure from the material layer which is laterally surrounded by the depression.
  • the first structure and the second structure form part of an upper sacrificial layer adjacent to the lower sacrificial layer.
  • the narrow depression is produced so that it extends to the lower sacrificial layer and cuts through the material layer.
  • the lid structure with the opening is applied. Using the opening of the lid structure, the sacrificial upper layer and the sacrificial lower layer are removed, whereby the recess forms a first part of the cavity, which has at least further parts arranged below and above the structure.
  • supports or suspensions may be provided which connect the structure to the substrate or to the lid structure.
  • a support is in the lower sacrificial layer creates an opening that reaches down to the substrate.
  • the opening is filled.
  • the filled opening forms the support connecting the layer of material to the substrate.
  • an opening is created in the upper sacrificial layer, which extends to the structure.
  • the opening is filled.
  • the filled opening forms the suspension that connects the structure to the lid structure.
  • a bottom of the recess may have mutually adjacent regions over which one of the structures has been produced in each case during the method and which lie at different depths. Due to the dimensions of the structures, each of the parts of these regions each have opposite edges whose spacing from one another is less than a few ⁇ m. Because a depth difference between the regions is due to the fault tolerances, it is much smaller than the depths of the regions, i. as the depths of the depression. If no lower sacrificial layer is provided, the shape of the bottom is retained even if the structures were removed in the manufacturing process.
  • first of the regions of the bottom of the depression can be strip-shaped, extend essentially parallel to one another and traverse the depression. Second of the regions of the bottom of the depression are arranged between the first regions.
  • the bottom has in each first area a cuboid flat projection which is substantially longer than it is wide.
  • An upper surface of the filler layer for the second structure when not planarized, has a slight indentation along a centerline of the associated narrow groove. If the lid structure is deposited on the filling layer, then a lower surface of the lid structure facing the depression has a corresponding projection which fills the indentation. The projection tapers downwards and is much smaller than the depth of the recess.
  • narrow recesses are in the form of strip-shaped trenches running parallel to one another, grooves form in an upper surface of this filling layer during the deposition of the filling layer for the second structures along center lines of the trenches.
  • the lid structure deposited over it fills the grooves and thus has protrusions in the form of burrs.
  • the recess has a depth which is greater than about 5 microns. It is within the scope of the invention if the recess has horizontal dimensions which are more than about 10 microns.
  • the circuit arrangement comprises a rotation rate sensor or an acceleration sensor, in which the movable structure can be displaced into lateral oscillations.
  • the circuit arrangement comprises a microphone in which the recess serves as a backside volume, and in which the lid structure is a perforated electrode.
  • a perforated electrode e.g. a membrane disposed above the lid structure.
  • the circuit arrangement is a thermal sensor.
  • a temperature measuring point is arranged above the recess, so that a heat flow between the temperature measuring point and the substrate is as small as possible.
  • the circuit arrangement is a high-frequency coil.
  • the high frequency coil is disposed over the recess filled with insulating material so that a capacitance between the high frequency coil and the semiconductor substrate is as small as possible.
  • the circuit arrangement is a pump or a valve for gases or liquids.
  • the depression acts as a flow channel.
  • the first structure and the second structure may include oxide.
  • a first substrate 1 made of silicon is provided as the starting material.
  • a lower sacrificial layer U is deposited to a thickness of about 1 micron on the first substrate 1 in a TEOS process SiO 2 and patterned (see FIG. 1 ). In this case, a recess is produced in a part of the lower sacrificial layer U, which reaches down to the first substrate 1.
  • About the lower sacrificial layer U is to produce a material layer S polysilicon deposited in a thickness of about 5 .mu.m (see FIG. 1 ).
  • the recess is filled, in which a support T is formed.
  • SiO 2 is deposited in a thickness of about 200 nm and patterned by a photolithographic process.
  • first trenches G1 are at a distance of approx. 1 ⁇ m from each other (see FIG. 1 ).
  • the first trenches G1 extend to the first (lower) sacrificial layer U and are approximately 5 ⁇ m deep.
  • first filling layer F1 made of SiO 2 is deposited. Parts of the first filling layer F1, which fill the first trenches G1 form first structures S1 (see FIG. 2 ). The thickness of the first structures S1 corresponds approximately to the depth of the first trenches G1.
  • an approximately 1 ⁇ m thick second filling layer F 2 of SiO 2 is deposited. Parts of the second filling layer F2 filling the second trenches G2 form second structures S2.
  • the first filling layer F1 and the second filling layer F2 together form an upper sacrificial layer.
  • the first trenches G1 and the second trenches G2 together form the recess V.
  • a bottom of the recess V has adjoining first regions B1 and second regions B2 in which each of their parts has respective opposite edges, the distance of which is smaller than a few microns is.
  • one of the first structures S1 is arranged above the first regions B1. Above the second regions B2, the second structures S2 are respectively arranged.
  • a bottom of the first trenches G1 coincides with the first regions B1.
  • a bottom of the second trenches G2 coincides with the second regions B2.
  • a semiconductor structure is formed from the material layer S, which is laterally surrounded by the depression V.
  • the semiconductor structure is about 50 ⁇ m wide and about 50 ⁇ m long.
  • An upper surface of the second filling layer F2 has along center lines of second trenches G2 extending grooves (see FIG. 3 ).
  • the recess V has a horizontal cross section in which a circular surface with a diameter of about 7 ⁇ m fits.
  • polysilicon is deposited in a thickness of approximately 1 ⁇ m.
  • the lid structure D has in the region of the depression V projections a in the form of burrs extending in the grooves (see FIG. 4 ).
  • the downwardly tapering projections a are substantially smaller than the depth of the recess V and are disposed over the second portions B2 of the bottom of the recess V.
  • the progressions of the protrusions a substantially coincide with the progressions of center lines of the second regions B2.
  • An opening O is produced in the cover structure D, through which the upper sacrificial layer and the lower sacrificial layer U are removed in an etching step.
  • etchant for example, a buffered hydrofluoric acid is suitable.
  • the depression V forms a part of a cavity, which is bounded by the lid structure D upwards.
  • the semiconductor structure can be vibrated by vibrations. The lateral freedom of movement is about 7 ⁇ m.
  • the circuit arrangement is suitable, for example, as a rotation rate sensor or as an acceleration sensor.
  • further components are arranged in the first substrate 1.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Measuring Fluid Pressure (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Weting (AREA)

Claims (5)

  1. Procédé de production d'un circuit intégré comprenant une cavité dans une couche ( S ) de matériau,
    - dans lequel, à partir de la couche ( S ) de matériau, on élimine, dans une zone prévue pour une cavité ( V ), une certaine proportion de la couche ( S ) de matériau jusqu'à ce que le fond de la cavité ( V ) soit mis à nu dans cette région, en produisant ainsi au moins une cavité ( G1 ) étroite, qui a une section transversale horizontale plus petite que la cavité ( V ) à produire et qui forme une partie de la cavité ( V ) à produire,
    - dans lequel on remplace la au moins une cavité ( G1 ) étroit par une première structure ( S1 ) prévue pour une partie du remplissage de la cavité ( V ) en déposant de manière sensiblement conforme une première couche ( F1 ) de remplissage, la première structure ( S1 ) formée dans la cavité ( G1 ) étroite ayant des parties de flanc opposées, dont la distance mutuelle est plus petite que la moitié de la profondeur de la cavité ( V ) et l'épaisseur de la couche ( F1 ) de remplissage représentant moins de la moitié de la profondeur de la cavité ( V ),
    - dans lequel on élimine la proportion restante de la couche ( S ) de matériau dans la région prévue pour la cavité ( V ), en produisant ainsi au moins une autre cavité ( G2 ) étroite,
    - dans lequel on remplace la au moins une autre cavité ( G2 ) étroite par une deuxième structure ( S2 ) prévue pour une autre partie du remplissage de la cavité ( V ) et voisine latéralement de la première structure ( S1 ) en déposant de manière sensiblement conforme une deuxième couche ( F2 ) de remplissage, la deuxième structure ( S2 ) formée dans l'autre cavité ( G2 ) étroite ayant des parties de flanc opposées, dont la distance mutuelle est plus petite que la moitié de la profondeur de la cavité ( V ) et l'épaisseur de la couche ( F2 ) de remplissage représentant moins que la moitié de la profondeur de la cavité ( V ),
    caractérisé en ce que
    - on produit la première structure ( S1 ) et la deuxième structure ( S2 ) en tant que parties d'une couche sacrificielle supérieure,
    - on dépose une structure ( D ) de couvercle sur la couche sacrificielle supérieure,
    - on produit dans la structure ( D ) de couvercle au moins une ouverture ( O ) par l'utilisation de laquelle on élimine la couche sacrificielle supérieure au moyen d'un agent d'attaque, de sorte que la cavité ( V ) forme l'évidement.
  2. Procédé suivant la revendication 1,
    dans lequel on produit plusieurs premières structures ( S1 ) et deuxièmes structures ( S2 ).
  3. Procédé suivant la revendication 1 ou 2,
    - dans lequel on dépose et structure une couche ( U ) sacrificielle inférieure sur un substrat ( 1 ) semi-conducteur,
    - dans lequel on dépose la couche ( S ) de matériau sur la couche ( U ) sacrificielle inférieure,
    - dans lequel on produit les cavités ( G1, G2 ) étroites, de façon à ce qu'elles aillent jusqu'à la couche ( U ) sacrificielle inférieure et séparent la couche ( S ) de matériau,
    - dans lequel, en utilisant l'ouverture ( O ) de la structure ( D ) de couvercle, on élimine la couche sacrificielle supérieure et la couche ( U ) sacrificielle inférieure par l'agent d'attaque, la cavité ( V ) formant ainsi une partie de l'évidemment, qui a au moins une autre partie disposée en dessous de la couche ( S ) de matériau.
  4. Circuit intégré
    - dans lequel il est disposé, dans une couche ( S ) de matériau, une cavité ( V ) d'une profondeur d'au moins quelques µm, qui a une section transversale horizontale dans laquelle s'adapte au moins une surface circulaire ayant un diamètre de quelques µm,
    - dans lequel il est disposé, au-dessus et à l'extérieur de la cavité ( V ) qui forme au moins une partie d'un évidement, une structure ( D ) de couvercle, caractérisé en ce que
    - un fond de la cavité ( V ) a des parties ( B1, B2 ) voisines l'une de l'autre qui ont respectivement des bords opposés dont la distance mutuelle est plus petite que quelques µm,
    - une surface inférieure de la structure ( D ) de couvercle qui est tournée vers la cavité ( V ) a au moins une saillie ( a ) se retrécissant vers le bas, sensiblement plus petite que la profondeur de la cavité ( V ) et disposée au-dessus de l'une des parties ( B2 ) du fond de la cavité ( V ) et dont le tracé coïncide sensiblement avec le tracé d'une ligne médiane de chaque partie ( B2 ).
  5. Circuit suivant la revendication 4,
    - qui comprend l'un des composants suivants :
    1. un capteur de vitesse de rotation ou un capteur d'accélération, dans lequel une structure à semi-conducteur, qui peut être déplacée suivant des oscillations latérales, est entourée latéralement par la cavité qui forme une partie d'un évidement,
    2. un microphone dans lequel la cavité sert de volume latéral arrière et la structure de couvercle est une électrode trouée.
EP99945888A 1998-07-08 1999-07-02 Procede permettant de former un circuit integre comprenant une cavite dans une couche de materiau et circuit integre fabrique selon ledit procede Expired - Lifetime EP1101389B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19830535 1998-07-08
DE19830535 1998-07-08
PCT/DE1999/002041 WO2000003560A2 (fr) 1998-07-08 1999-07-02 Procede permettant de former une depression remplie dans une couche de materiau, et circuit integre fabrique selon ledit procede

Publications (2)

Publication Number Publication Date
EP1101389A2 EP1101389A2 (fr) 2001-05-23
EP1101389B1 true EP1101389B1 (fr) 2008-09-24

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EP99945888A Expired - Lifetime EP1101389B1 (fr) 1998-07-08 1999-07-02 Procede permettant de former un circuit integre comprenant une cavite dans une couche de materiau et circuit integre fabrique selon ledit procede

Country Status (6)

Country Link
US (1) US6724058B2 (fr)
EP (1) EP1101389B1 (fr)
JP (1) JP2002520862A (fr)
AT (1) ATE409398T1 (fr)
DE (1) DE59914876D1 (fr)
WO (1) WO2000003560A2 (fr)

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Publication number Priority date Publication date Assignee Title
AU2002213857A1 (en) * 2000-08-24 2002-03-04 Fachhochschule Furtwangen Electrostatic electroacoustical transducer
US20040040504A1 (en) * 2002-08-01 2004-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
DE10247487A1 (de) * 2002-10-11 2004-05-06 Infineon Technologies Ag Membran und Verfahren zu deren Herstellung
MXPA05008024A (es) * 2003-01-31 2006-01-27 Dow Corning Ireland Ltd Unidad de electrodos para generacion de plasma.
KR20080005854A (ko) 2006-07-10 2008-01-15 야마하 가부시키가이샤 압력 센서 및 그의 제조 방법

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Also Published As

Publication number Publication date
US20010005032A1 (en) 2001-06-28
US6724058B2 (en) 2004-04-20
ATE409398T1 (de) 2008-10-15
JP2002520862A (ja) 2002-07-09
WO2000003560A2 (fr) 2000-01-20
WO2000003560A3 (fr) 2000-02-24
EP1101389A2 (fr) 2001-05-23
DE59914876D1 (de) 2008-11-06

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