EP1095315A1 - Technique permettant de decontaminer les dispositifs d'eclairage par projection utilises en microlithographie - Google Patents

Technique permettant de decontaminer les dispositifs d'eclairage par projection utilises en microlithographie

Info

Publication number
EP1095315A1
EP1095315A1 EP99929261A EP99929261A EP1095315A1 EP 1095315 A1 EP1095315 A1 EP 1095315A1 EP 99929261 A EP99929261 A EP 99929261A EP 99929261 A EP99929261 A EP 99929261A EP 1095315 A1 EP1095315 A1 EP 1095315A1
Authority
EP
European Patent Office
Prior art keywords
light source
projection exposure
fluid
microlithography projection
exposure system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99929261A
Other languages
German (de)
English (en)
Inventor
Michael Gerhard
Marcus Zehetbauer
Nils Dieckmann
Martin Schriever
Christine Sieler
Gerd Reisinger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss AG filed Critical Carl Zeiss AG
Publication of EP1095315A1 publication Critical patent/EP1095315A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

Definitions

  • the invention relates to a method for decontamination of microlithography projection exposure systems with optical elements or parts thereof, in particular surfaces of optical elements, with UV light and fluid.
  • the invention also relates to a microlithography projection exposure system with a DUV (deep ultraviolet) excimer laser as the light source for the projection exposure. This covers the wavelength range from approx. 100-300 nm with vacuum UV.
  • DUV deep ultraviolet
  • quartz rods or CaF 2 rods are arranged in lighting devices for semiconductor lenses for thorough mixing of the radiation emitted by a light source. Good total mixing is achieved by multiple total reflection of the light coupled into the glass rod or CaF 2 rod. If the surface of the quartz rod or CaF 2 rod is contaminated, absorption losses occur there as well, resulting in a weakening of the resulting lighting intensity.
  • No. 5,024,968 describes a method for cleaning optical components, in particular for X-ray lithography and UV Excimer laser optics are described, high energy radiation with a laser being used as the energy source in connection with a flushing glass which is inert with respect to the surface.
  • the cleaning is provided on optical lenses and mirrors as individual components, as is possible, for example, in production.
  • the present invention therefore has for its object a process for the decontamination of microlithography projection tion exposure apparatus of the initially mentioned type with which the entire system can be decontaminated in operation or in operation breaks and without the risk of material injury ⁇ conditions of Coatings or materials.
  • the inventive use of a second UV light source ⁇ can easily create a decontaminating microlithography projection exposure systems perform.
  • the additional UV light source can namely be optimally adapted to the requirements for decontamination without the risk of damage, since it is independent of normal lighting.
  • the second light source can also contain the laser used for the exposure or parts thereof.
  • it can, for example, be designed to be relatively broadband and, for example, can also be operated with a correspondingly higher output, as is the case for normal lighting.
  • the larger bandwidth improves the cleaning effect, since additional narrow-band transitions are stimulated, such as oxygen excitations in the area of the Schumann-Runge band.
  • the wavelength can be selected so that problems of material destruction, such as compaction, are minimized. As a rule, the wavelength is close to the exposure wavelength.
  • Projection exposure systems have for homogenization of light emitted from the light source a bar-shaped light conductor, is coupled adiation in the radiation emitted by the light source S, which is carried by multiple total reflection at the surface of the light guide, a homogenization of the coupled radiation.
  • To absorption losses as a result of contamination of the surface of the light guide is to avoid hen for irradiation thereof vorgese ⁇ a UV light source.
  • the UV light source is arranged in a focal point of the ellipsoidal reflector and the radiation emitted by the UV light source is focused on the further focal point in which the light guide is arranged.
  • Fig. 1 projection exposure system
  • Fig. 2 section through an illumination device.
  • a plurality of lenses 2 are arranged in a housing 1.
  • the system is equipped with a DUV excimer laser 3 as the light source for the projection exposure.
  • a flushing gas supply in the form of a laminar flow is provided at the edge in normal operation, for which purpose a gas supply device 4 is used.
  • a further UV light source with a broadband laser 5 is provided.
  • the broadband laser 5 serves as a cleaning light source and is coupled into the beam path via a pivotable mirror 6, which is provided with an adjusting mechanism, so that the lenses 2 are illuminated as evenly as possible.
  • a partially transparent mirror polarization beam splitter, dichroic mirror
  • the arrangement of several light sources between the lenses of the objective for illuminating the surface to be decontaminated can also be provided.
  • a gas flow (12) for example gas containing ozone, is generated parallel to the individual surfaces of the lenses 2 or along the lenses 2. Since such a flow would interfere with normal lens operation, it must be able to be switched on and off, although the minimal, diffusion-based gas exchange in normal operation by the gas supply tion device 4 takes place.
  • a purge gas supply device 7 is provided, from which the purge gas supply takes place at least approximately perpendicular to the optical axis 10 via lines 8 and radial purge openings in the housing 1.
  • purge gas is removed together with contamination constituents via lines 9 in the peripheral wall of the housing 1 on the side opposite the purge openings.
  • the radial flushing openings achieve a uniform, directed flow (12) over the lens surfaces.
  • the gas supply device 4 can be used for normal operation for purging contamination.
  • the gas flow running parallel to the optical axis 10 is e.g. by swiveling mechanical shutters 11 (shown in dashed lines) directed over the lens surfaces. If necessary, the power of the gas supply device 4 must be increased accordingly to increase the flow rate.
  • Another possibility of using the purging gas supply in normal operation for contamination purging can also be that cross currents are generated by inhomogeneous magnetic or electrical fields. An alternating use of purge gases of different densities is also possible.
  • the gas flow When using the gas supply device 4 for normal operation, the gas flow will be increased so that the laminar flow becomes turbulent. In this case, changes to the lens geometry (frame) may also be necessary to achieve eddy currents.
  • the laser 5 intended for decontamination should be a DUV excimer laser that can operate with a bandwidth of 500 pm. It is also possible to use a UV excimer lamp, for example with a wavelength of 222 nm. For example, the exposure laser without injection locking can also be used as a cleaning laser. On the wafer side, a shutter can block the light from entering Prevent exposure breaks.
  • FIG. 2 shows an average of a light guide 25 connected downstream of the DUV excimer laser 3 as the light source of the projection exposure system for homogenizing the radiation emitted by the light source.
  • a quartz rod is provided as the light guide 25, which is arranged on a focal point 31 of an ellipsoidal reflector 21 surrounding it.
  • a CaF 2 rod can also be used as a light guide.
  • a UV light source 23 Arranged on the further focal point 29 of the reflector 21 is a UV light source 23 provided for irradiating the surface 27 of the light guide 25, the radiation of which is focused on the surface 27 of the light guide. It can be provided that fluid flows through the reflector.

Abstract

On utilise les ultraviolets et un fluide afin de décontaminer les dispositifs d'éclairage par projection utilisés en microlithographie, comportant des éléments optiques (2), ou des parties desdits dispositifs, notamment la surface des éléments optiques. La décontamination se fait, durant les pauses de l'éclairage, au moyen d'une seconde source (5) d'UV dirigée sur au moins une partie des éléments optiques (2).
EP99929261A 1998-07-08 1999-06-17 Technique permettant de decontaminer les dispositifs d'eclairage par projection utilises en microlithographie Withdrawn EP1095315A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19830438A DE19830438A1 (de) 1998-07-08 1998-07-08 Verfahren zur Dekontamination von Mikrolithographie-Projektionsbelichtungsanlagen
DE19830438 1998-07-08
PCT/EP1999/004210 WO2000003304A1 (fr) 1998-07-08 1999-06-17 Technique permettant de decontaminer les dispositifs d'eclairage par projection utilises en microlithographie

Publications (1)

Publication Number Publication Date
EP1095315A1 true EP1095315A1 (fr) 2001-05-02

Family

ID=7873297

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99929261A Withdrawn EP1095315A1 (fr) 1998-07-08 1999-06-17 Technique permettant de decontaminer les dispositifs d'eclairage par projection utilises en microlithographie

Country Status (7)

Country Link
US (1) US6936825B2 (fr)
EP (1) EP1095315A1 (fr)
JP (1) JP2002520839A (fr)
KR (1) KR100659698B1 (fr)
DE (1) DE19830438A1 (fr)
TW (1) TW425494B (fr)
WO (1) WO2000003304A1 (fr)

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Also Published As

Publication number Publication date
TW425494B (en) 2001-03-11
WO2000003304A1 (fr) 2000-01-20
KR100659698B1 (ko) 2006-12-21
US20010026402A1 (en) 2001-10-04
US6936825B2 (en) 2005-08-30
DE19830438A1 (de) 2000-01-13
JP2002520839A (ja) 2002-07-09
KR20010053391A (ko) 2001-06-25

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