EP1093132A2 - Elément résistif ajustable, son application et procédé de fabrication - Google Patents

Elément résistif ajustable, son application et procédé de fabrication Download PDF

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Publication number
EP1093132A2
EP1093132A2 EP00115803A EP00115803A EP1093132A2 EP 1093132 A2 EP1093132 A2 EP 1093132A2 EP 00115803 A EP00115803 A EP 00115803A EP 00115803 A EP00115803 A EP 00115803A EP 1093132 A2 EP1093132 A2 EP 1093132A2
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EP
European Patent Office
Prior art keywords
layer
resistance
contact
resistor
contact layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP00115803A
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German (de)
English (en)
Other versions
EP1093132B1 (fr
EP1093132A3 (fr
Inventor
Walter Emili
Herbert Goebel
Harald Wanka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
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Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP1093132A2 publication Critical patent/EP1093132A2/fr
Publication of EP1093132A3 publication Critical patent/EP1093132A3/fr
Application granted granted Critical
Publication of EP1093132B1 publication Critical patent/EP1093132B1/fr
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/22—Elongated resistive element being bent or curved, e.g. sinusoidal, helical

Definitions

  • the invention relates to a planar trimming resistor with a substrate and one deposited thereon Resistor layer, a resistor bridge circuit and a sensor that such Use trimming resistor and procedure to manufacture the trimming resistor respectively the resistance bridge circuit or the Sensors.
  • Trimming resistors are used in circuits, which were initially manufactured with a certain tolerance and their behavior afterwards by adjusting the resistance value of said Trimming resistors is set exactly.
  • Trimmer resistors with a planar resistance layer known, the resistance value after installation of the trimming resistor in a circuit local removal of material from the resistance layer can be adjusted. This is the result Problem that a change in resistance value by removing material of the resistance layer also affects their capacity, especially if if the resistance layer is in the immediate Extends near another conductor, e.g. because they are only separated by a thin layer of insulation is deposited on a metallic substrate.
  • the present invention makes a planar Trimming resistor of the type described in the introduction created its capacity through the matching process is not affected.
  • This advantage is achieved in that a contact layer, which have better conductivity than that Has resistance layer on the resistance layer is arranged so that it is at least individual positions in contact with the latter stands, and the at least locally ablating Treatment is accessible. If at one such a resistance, the contact layer locally is eliminated, this has the consequence that a Current that would otherwise flow through the contact layer would have, at least partially, in the resistance layer is pushed so that by the removal the contact layer controls the resistance value is increased. But at the same time the resistance layer exist under the worn contact layer remains, the one opposite the substrate changes electrically conductive surface of the Trimming resistor not, and its capacity is not changed by the removal process.
  • the contact layer may extend over the Limits of the resistance layer beyond on the substrate extend. However, those areas are allowed the contact layer that is not above the Resistance layer, cannot be removed, otherwise the surface of the balancing resistor would be reduced and thus the capacity would be affected undesirably. To such To rule out problems, it is appropriate to Contact layer in the manufacture of the balancing resistor dimensioned so that they do not have the Edges of the resistance layer protrude.
  • the contact layer and the resistance layer are preferably formed in strips. Connection contacts are on opposite ends of the contact layer strip intended.
  • the Stripes can be zigzag or meandering in a space-saving manner be arranged on the substrate.
  • the trimming resistor preferably has a passivation layer on the the resistance layer essentially covered and only locally individual Window that has the conductive contact enable the contact layer with the resistance layer.
  • the passivation layer is between two windows preferably one bottleneck of the contact layer intended. At such a narrow point to cut through the contact layer particularly easily, their severance means that a electrical current that would otherwise pass through the contact layer would have flowed between the two windows must take the path across the resistance layer.
  • the passivation layer is not just for protection the resistance layer from environmental influences, their Window structure also has the advantage that it is enough to keep the contact layer on a small Cut length between two windows to the current path in the resistance layer around the im Compared to this length greater distance between extend two windows.
  • a preferred application of the trimming resistor is a resistance bridge circuit.
  • a resistance bridge circuit At a such a bridge circuit are conveniently the Resistance elements and the at least one trimming resistor formed on the same substrate. So the resistance elements and the Trimming resistor partly with the same process steps getting produced.
  • trimming resistor is a sensor that is a deformable Comprises substrate and at least one resistance element, its resistance due to deformation of the substrate is changeable and the one according to the invention Trimming resistor is assigned.
  • This resistance element can in turn be part of a Resistor bridge circuit.
  • the sensor can advantageously be act a pressure sensor; the substrate can be part a pressure capsule of such a sensor.
  • the invention further relates to a method for Manufacture a trimming resistor in which a Resistance layer on an insulating substrate is separated and structured, and in which over the resistance layer in at least local Contact with this formed a contact layer which has better conductivity than the resistance layer Has.
  • a passivation layer applied the windows to manufacture of local contact.
  • the different layers are photolithographic Process or - especially with sensors advantageous - laser structuring process.
  • the Contact layer can in particular also by sputtering of the layer material are generated. It is also conceivable to apply the material of the Contact layer directly through a mask, see above that the contact layer on the resistance layer (separated by passivation) immediately in the desired shape is created.
  • the resistance is preferably adjusted by cutting the contact layer between two Windows, preferably by laser ablation.
  • This Laser ablation is with the same equipment feasible, which may also previously be used for laser structuring of the different layers used have been.
  • FIGs 1, 2 and 3 show a section of a trimming resistor according to the invention in a Top view or in two cuts.
  • the Trimming resistor is on a substrate 1, here a stainless steel sheet with an insulation layer 2 built on it from silicon oxide. It includes one Resistance layer 3 made of a material with moderate good conductivity on the insulation layer 2 forms a meandering or zigzag pattern, of which two full periods are shown in Figure 1 are.
  • a passivation layer 5 which consists of Silicon nitride or like the insulation layer 2 Silicon oxide exists.
  • the contact layer 6 is over the Window 4 with the resistance layer 3 in conductive Contact.
  • the conductivity of the contact layer 6 is clear is better than that of the resistance layer 3, flows in the unbalanced state of the balancing resistor a current in the essentially through the contact layer 6.
  • the resistance it is intended to adjust the contact layer 6 at a narrow point, e.g. to area 7 cut through.
  • the method of laser ablation is suitable, especially with an excimer laser. So that's it easily possible, one on area 7 dosed laser energy so that the Contact layer 6 at the point in question is removed without the underlying one Resistor layer 3 with damaged becomes. For this purpose e.g.
  • the materials the contact layer 6 and the resistance layer 3 and the wavelength of the laser are chosen so that the ablation energy of the contact layer 6 is smaller than that of the resistance layer 3, so that the energy of the excimer, even after it Destruction of the contact layer 6 the resistance layer 3 reached, not enough to do this too to destroy.
  • other - known - Cutting processes such as spark erosion, applicable.
  • the composition of the Passivation layer 5 serve.
  • the penetration depth of the laser radiation so that this over the Total thickness of the passivation layer 5 from this is absorbed and so their energy in their distributed over the entire volume.
  • the resistance layer essential smaller, so that the heating induced by the laser of these layers are on a thin surface layer of these concentrated and sufficient to evaporate this surface layer.
  • the contact layer 6 cuts at the narrow point 7 is, the current is forced between the the bottleneck 7 adjacent windows 4 through the Resistive layer 3 to flow.
  • Figures 4 and 5 show a preferred application example of the balancing resistance described above.
  • FIG 4 is a plan view of the membrane 12 of a Pressure sensor, which is the role of the substrate 1 plays.
  • the resistance elements and the trimming resistors are in a common process, to which later is discussed in more detail on the membrane 12 generated; have the resistance elements R1, R2, R3, R4 a resistance layer, that of the resistance layer 3 corresponds to the trimming resistors, however, they do not have a continuous one Contact layer, and the passivation layer 5 is over the resistance elements R1, R2, R3, R4 with Except for their connection pads throughout.
  • Figure 5 shows the membrane 12 of Figure 4 in cross section. It is part of a high pressure sensor 11 and is in one piece with a rigid metal frame 13 connected. Is between the two sides the membrane 12 a pressure drop, this leads to a deformation of the membrane 12, and it comes to Example if the pressure below the membrane is higher is as above, in the area of the resistance elements R1 and R2 for compression and in the area of the resistance elements R3 and R4 to stretch at the Surface of the membrane. Affect these deformations the conductivity of the resistance layers of the resistance elements and thus cause a detuning the Wheatstone Bridge leading to one two of the connections K1 to K4, from Zero different measuring voltage leads.
  • the resistance layer expediently selected a material that a significant dependence of the specific resistance from deformation.
  • suitable Materials e.g. polycrystalline silicon, Chromium-nickel alloy or platinum to mention.
  • NiCr layers show practically none Temperature dependence of the resistance, but one relatively small effect when bending while polycrystalline silicon a non-linear temperature dependency, but a much larger one Has an effect when bending.
  • Platinum shows also a clear effect with a linear Temperature dependence of the resistance.
  • Suitable Layer thicknesses range from 500 to 600 nm for polycrystalline silicon and from 50 to 100 nm for CrNi or platinum.
  • the layer thicknesses should be chosen so that the layer conductivity of the resistance layer is smaller than that of the contact layer, regardless the specific conductivities for this Layers of materials used.
  • Stage A shows the still empty substrate 1 or the pressure cell of Figure 5, consisting of the Frame 13 and the membrane 12.
  • This substrate will first subjected to an incoming inspection for roughness and then wet first and then finally cleaned by argon sputtering.
  • the substrate treated in this way is then opened preheated to about 300 ° C for a PECVD oxide deposition prepare.
  • the Insulation layer 2 in a thickness of 7-10 microns Silicon oxide deposited. This insulation layer on the substrate is randomly checked for thickness and tension controlled.
  • the resistance layer 3 is sputtered applied.
  • the surface resistance is checked by the 4-tip method, and the layer thickness is determined by X-ray fluorescence (Level C).
  • a structuring step follows in which the first, a large-area resistance layer the meandering structure shown in Figure 1 will be produced.
  • the photolithographic Technique involves applying one Lacquer layer, the exposure of the lacquer layer with the desired pattern and its development post-chemical etching of those areas by development have lost their paint layer, and finally the removal of the rest Paint layer.
  • the laser structuring stops particularly advantageous structuring process
  • laser light becomes a suitable energy density through a mask on the surface of the membrane irradiated. With the help of the deepening on the It is the back of the membrane 12 (see FIG. 5) possible, the sensor suitable for structuring to center. Also, the coated layer automatically brought to the focus level.
  • the Laser exposure through the mask causes that layer material exposed to the laser radiation is removed (ablated) so that the multitude the steps of the photolithographic process can be omitted.
  • the strength of the absorption of the excimer laser radiation used in the insulation layer 2 can by setting a desired silicon content the insulation layer can be varied. This makes possible it that radiation that towards the end of erosion the resistance layer 3 the insulation layer 2 reached, absorbed over their entire thickness and so the interface between Substrate and insulation layer not or not in of such strength that it becomes a Damage to this boundary layer could result.
  • a such a silicon-rich oxide layer can also be used advantageous due to a sputtered silicon oxide layer to reach.
  • Such a sputtered layer also has the advantage that the subsequent resistance layer to be applied a higher Long-term stability achieved because of the resistance layer protected from hydrogen is, which is usually in PECVD oxide or Nitride layers built into the deposition becomes. Consequently, should also before the Passivation of the resistance layer a sputtered Oxide layer can be provided.
  • Stage (D) shows the substrate with the finished structured one Resistance layer 3.
  • a subsequent structuring of the passivation layer 5 can in turn be a photolithographic Technology or laser structuring applied as already for the structuring of the resistance layer 3 described.
  • window 4 will be above of the remaining pieces of the resistance layer 3 generated. Those pieces that are one of the Resistance elements R1 to R4 are to be obtained two windows for the connection contacts, those pieces that have the trimming resistors A1, A2 should form a variety of distributed over their surface Windows.
  • the finished structured passivation layer 5 (Level F) is checked optically.
  • the contact layer 6 applied by sputtering.
  • the material for the contact layer 6 is preferred Gold - also because of its stability against Environmental influences - with a layer thickness of 0.3 used up to 0.5 nm. If necessary, however including a metallic adhesive layer and a more metal as a diffusion barrier in the same Step applied. Aluminum or nickel come as materials also in question.
  • the thickness of the Contact layer 6 is then made using X-ray fluorescence controlled.
  • the contact layer 6 For the subsequent structuring of the contact layer 6 come the photolithographic Process or the process of laser structuring in question.
  • the nominal dimensions of the contact layer areas, the the contact layer of the trimming resistors are intended to be chosen that taking into account mask tolerances and other manufacturing inaccuracies guaranteed is that the one that remains after structuring Nowhere in the contact layer over the edge protrudes from the underlying resistance layer.
  • This measure ensures that the capacitance of the resistance elements and the trimming resistors exclusively through the area its resistance layers 3 is fixed and of possible inaccuracies in positioning the contact layers cannot be influenced. So it is possible to connect the bridge with one high degree of symmetry of the capacity of their individual To make branches. Consequently, the bridge circuit in a wide frequency range of input voltages be operated without unequal distributions the capacity to the individual Branches their output voltage depending on frequency influence.
  • Stage (H) shows the sensor with the structured contact layer 6.
  • the bridge circuit can be calibrated.
  • the proposed method is excellent for the production of high pressure sensors in Large series, because the manufacturing steps up to Level (H) can be advantageous in a holder for a large number of sensors performed simultaneously without any steps in between are an individual treatment of the Require sensors; after adjustment is the Sensor completely finished, without further coating steps would be required.
  • H Level

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
EP00115803A 1999-10-15 2000-07-22 Elément résistif ajustable, son application et procédé de fabrication Expired - Lifetime EP1093132B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19949607A DE19949607A1 (de) 1999-10-15 1999-10-15 Planarer Abgleichwiderstand, Anwendungen und Verfahren zu seiner Herstellung
DE19949607 1999-10-15

Publications (3)

Publication Number Publication Date
EP1093132A2 true EP1093132A2 (fr) 2001-04-18
EP1093132A3 EP1093132A3 (fr) 2004-06-02
EP1093132B1 EP1093132B1 (fr) 2005-12-28

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EP00115803A Expired - Lifetime EP1093132B1 (fr) 1999-10-15 2000-07-22 Elément résistif ajustable, son application et procédé de fabrication

Country Status (3)

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US (1) US6667683B1 (fr)
EP (1) EP1093132B1 (fr)
DE (2) DE19949607A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007034463A1 (fr) 2005-09-20 2007-03-29 Analog Devices, Inc. Résistance à couche ajustable et procédé de formation et d'ajustement d'une résistance à couche

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6647614B1 (en) * 2000-10-20 2003-11-18 International Business Machines Corporation Method for changing an electrical resistance of a resistor
AU2002325723A1 (en) * 2001-09-10 2003-03-24 Microbridge Technologies Inc. Method for trimming resistors
JP3915586B2 (ja) * 2002-04-24 2007-05-16 株式会社デンソー 力学量検出装置の製造方法
US20060039419A1 (en) * 2004-08-16 2006-02-23 Tan Deshi Method and apparatus for laser trimming of resistors using ultrafast laser pulse from ultrafast laser oscillator operating in picosecond and femtosecond pulse widths

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2039920A1 (de) * 1970-08-11 1972-02-17 Siemens Ag Verfahren zum nachtraeglichen Erniedrigen der Widerstandswerte von Duennschichtwiderstaenden
US3996551A (en) * 1975-10-20 1976-12-07 The United States Of America As Represented By The Secretary Of The Navy Chromium-silicon oxide thin film resistors
EP0325234A2 (fr) * 1988-01-20 1989-07-26 Kabushiki Kaisha Toshiba Elément d'ajustage pour circuit microélectronique
DE3919059A1 (de) * 1989-06-10 1991-01-03 Bosch Gmbh Robert Drucksensor zum erfassen von druckschwankungen einer druckquelle
JPH0677021A (ja) * 1992-08-27 1994-03-18 Murata Mfg Co Ltd 抵抗体の抵抗値調整方法

Family Cites Families (5)

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Publication number Priority date Publication date Assignee Title
US4150366A (en) * 1976-09-01 1979-04-17 Motorola, Inc. Trim network for monolithic circuits and use in trimming a d/a converter
US4200970A (en) * 1977-04-14 1980-05-06 Milton Schonberger Method of adjusting resistance of a thermistor
US4201970A (en) * 1978-08-07 1980-05-06 Rca Corporation Method and apparatus for trimming resistors
US4586988A (en) * 1983-08-19 1986-05-06 Energy Conversion Devices, Inc. Method of forming an electrically conductive member
US5363084A (en) * 1993-02-26 1994-11-08 Lake Shore Cryotronics, Inc. Film resistors having trimmable electrodes

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2039920A1 (de) * 1970-08-11 1972-02-17 Siemens Ag Verfahren zum nachtraeglichen Erniedrigen der Widerstandswerte von Duennschichtwiderstaenden
US3996551A (en) * 1975-10-20 1976-12-07 The United States Of America As Represented By The Secretary Of The Navy Chromium-silicon oxide thin film resistors
EP0325234A2 (fr) * 1988-01-20 1989-07-26 Kabushiki Kaisha Toshiba Elément d'ajustage pour circuit microélectronique
DE3919059A1 (de) * 1989-06-10 1991-01-03 Bosch Gmbh Robert Drucksensor zum erfassen von druckschwankungen einer druckquelle
JPH0677021A (ja) * 1992-08-27 1994-03-18 Murata Mfg Co Ltd 抵抗体の抵抗値調整方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN Bd. 018, Nr. 324 (E-1564), 20. Juni 1994 (1994-06-20) & JP 06 077021 A (MURATA MFG CO LTD), 18. März 1994 (1994-03-18) *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007034463A1 (fr) 2005-09-20 2007-03-29 Analog Devices, Inc. Résistance à couche ajustable et procédé de formation et d'ajustement d'une résistance à couche
US7598841B2 (en) 2005-09-20 2009-10-06 Analog Devices, Inc. Film resistor and a method for forming and trimming a film resistor
US7719403B2 (en) 2005-09-20 2010-05-18 Analog Devices, Inc. Film resistor and a method for forming and trimming a film resistor

Also Published As

Publication number Publication date
EP1093132B1 (fr) 2005-12-28
US6667683B1 (en) 2003-12-23
DE50011959D1 (de) 2006-02-02
EP1093132A3 (fr) 2004-06-02
DE19949607A1 (de) 2001-04-19

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