EP1040519A1 - Corps composite en matiere plastique - Google Patents

Corps composite en matiere plastique

Info

Publication number
EP1040519A1
EP1040519A1 EP98965611A EP98965611A EP1040519A1 EP 1040519 A1 EP1040519 A1 EP 1040519A1 EP 98965611 A EP98965611 A EP 98965611A EP 98965611 A EP98965611 A EP 98965611A EP 1040519 A1 EP1040519 A1 EP 1040519A1
Authority
EP
European Patent Office
Prior art keywords
particles
plastic
filler
size
composite body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP98965611A
Other languages
German (de)
English (en)
Inventor
Alexandra Atzesdorfer
Achim Neu
Thies Janczek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP1040519A1 publication Critical patent/EP1040519A1/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/12—Bonding of a preformed macromolecular material to the same or other solid material such as metal, glass, leather, e.g. using adhesives
    • C08J5/124—Bonding of a preformed macromolecular material to the same or other solid material such as metal, glass, leather, e.g. using adhesives using adhesives based on a macromolecular component
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/778—Nanostructure within specified host or matrix material, e.g. nanocomposite films
    • Y10S977/779—Possessing nanosized particles, powders, flakes, or clusters other than simple atomic impurity doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
    • Y10S977/893—Deposition in pores, molding, with subsequent removal of mold
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Definitions

  • the invention relates to plastic composite bodies such as electrical components, which have a body made of a semiconductor material, for example a microchip.
  • ead frames It is known to attach microchips to a conductive carrier frame with a chip-attach adhesive layer, which are called ead frames. These ead frames are then attached to conductor tracks on a circuit board using conductive adhesive or by soldering.
  • plastic composite bodies such as semiconductor components, which have a base body made of metal, such as a lead frame, and a body made of semiconductor material, such as a microchip, undesirable failures often occur under real environmental conditions. This is also attributed to a lack of heat dissipation from the microchip.
  • a plastic mass is provided in particular for the firm connection of semiconductor bodies with other materials such as metal and / or for the encapsulation of semiconductor bodies.
  • the plastic mass has at least one plastic, which can be a thermoset or a thermoplastic, at least one filler being embedded in the plastic.
  • the filler has at least one of the fillers has nanoscale, in particular spherical, particles produced using a condensation process.
  • a new technology of physical evaporation makes it possible to produce particles that are smaller than 100 nm.
  • the particles are formed spherically by condensation, the type of connection being determinable through the use of certain process gases. In this way it is possible to produce oxides, nitrides etc. with a particularly small size.
  • the plastic composition according to the invention protects an electrical component from mechanical and chemical influences.
  • a semiconductor chip is encapsulated in a molding process together with its contacting, for example with a lead frame, with a molding compound based, for example, on epoxy resin under the action of pressure and temperature.
  • a molding compound based, for example, on epoxy resin under the action of pressure and temperature.
  • a high degree of filling can be ensured in the plastic composition according to the invention, so that only a small proportion of expensive base resin is necessary.
  • Good flow properties are advantageously provided in the mold, with the advantage that the package and the connecting wires are not damaged or displaced in the injection molding process.
  • the coordination of the tool design and the injection parameters can be significantly simplified.
  • the particles do not represent a mechanical obstacle compared to the epoxy resin, so that the flow behavior of the molding compound in the mold flow improves. There- This increases the service life of the mold tool, since the injection opening is exposed to little wear due to smaller particles.
  • the mechanical load on the wires and chips decreases because the particles flow more easily around the chip, which is an obstacle.
  • the degree of filling in the plastic composition according to the invention is increased through the use of nanosphericals, which results in a lower coefficient of thermal expansion.
  • the plastic composition according to the invention can also be used as a so-called die-bonding adhesive with a high degree of filling, as a result of which a high thermal conductivity is achieved, for example for the assembly of power semiconductor components on metallic lead frames. This saves technically difficult assembly techniques such as soldering or ligating.
  • the use of nanoscale fillers can enable higher fill levels in adhesives.
  • the thermal conductivity of an adhesive layer produced with a plastic composition according to the invention can also be varied, and targeted use in the case of a specific requirement for thermal conductivity is possible.
  • the size of the particles can preferably be in a range up to 1000% of the size of the oligomer compounds of the plastic, since this results in a particularly good incorporation of the particles into a plastic which is in the crosslinking process, which results in a tight packing of the plastic and at the same time closed resin covering of the particles is guaranteed.
  • An oligomer connection of the plastic shows an intermediate state between the monomeric state of the plastic and the polymeric or completely crosslinked state of the plastic.
  • typical particle sizes smaller than 1 ⁇ m and preferably in the range smaller than 40 nm are provided.
  • particles with a size of less than 10 can nm are provided. Smaller particles are conceivable.
  • plastic compound with an electrically insulating adhesive layer Aluminum oxides Al 2 O 3 , boron nitride BN and / or aluminum nitride A1N are preferably used. This results in an adhesive layer with good thermal conductivity, which is suitable for electrically isolating a semiconductor component from a lead frame.
  • the filler can also have metallic particles.
  • adhesive layers can be produced with the plastic mass according to the invention, by means of which a semiconductor component is connected in an electrically conductive manner to a lead frame.
  • the resistance of an adhesive layer can also be set, which ensures good thermal conductivity.
  • Silver, palladium and / or copper are currently preferably used as metal particles.
  • the invention is also implemented in a composite body, which in particular represents an integrated circuit.
  • Composite body has a base body, in particular made of a metal, and a chip made of a semiconductor material fastened over an adhesive layer on the base body, the adhesive layer being produced from the plastic composition according to the invention. Accordingly, the invention also encompasses the use of the plastic composition according to the invention in a manufacturing process for the firm connection of semiconductor bodies with other materials such as metal. This results in use as a thief adhesive with a high degree of filling.
  • the invention also encompasses a composite body and in particular an integrated circuit which comprises a chip Has semiconductor material, a base body, in particular made of metal, and a sheathing, the sheathing having a filler and a plastic, as are used in the plastic composition according to the invention.
  • the invention also encompasses the use of the plastic composition according to the invention for the encapsulation of semiconductor bodies in order to form a housing.
  • Packages are preferably produced here, the wrapping or housing of which consists of a biphenyl-based molding compound with a filler which has Si0 2 as a nanoscal spherical with a diameter of approximately 30 nm.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)

Abstract

L'invention concerne un circuit intégré comprenant une grille de connexion sur laquelle une puce en matériau semi-conducteur est fixée par une couche adhésive. La couche adhésive est composée au moins d'une matière de charge et d'une matière plastique. La matière de charge contient des particules à l'échelle des nanomètres, notamment sphériques et produites selon un procédé de condensation. Ces particules peuvent être conductrices ou isolantes. Il est possible de doter la puce d'une enveloppe en matière plastique contenant de telles matières de charge.
EP98965611A 1997-12-19 1998-12-14 Corps composite en matiere plastique Ceased EP1040519A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE1997156887 DE19756887A1 (de) 1997-12-19 1997-12-19 Kunststoffverbundkörper
DE19756887 1997-12-19
PCT/DE1998/003661 WO1999033106A1 (fr) 1997-12-19 1998-12-14 Corps composite en matiere plastique

Publications (1)

Publication Number Publication Date
EP1040519A1 true EP1040519A1 (fr) 2000-10-04

Family

ID=7852752

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98965611A Ceased EP1040519A1 (fr) 1997-12-19 1998-12-14 Corps composite en matiere plastique

Country Status (5)

Country Link
US (1) US6469086B1 (fr)
EP (1) EP1040519A1 (fr)
JP (1) JP2001527131A (fr)
DE (1) DE19756887A1 (fr)
WO (1) WO1999033106A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2578514A1 (fr) 2011-10-03 2013-04-10 Berlinger & Co. Récipient doté dýune sécurisation de fermeture

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* Cited by examiner, † Cited by third party
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DE10000834A1 (de) * 2000-01-12 2001-08-16 Fraunhofer Ges Forschung Verfahren zur Herstellung elektrisch leitender Verbindungen
DE10016380C2 (de) * 2000-03-29 2002-01-24 Infineon Technologies Ag Gehäuse für ein elektrisches Bauteil
DE10123232A1 (de) * 2001-05-12 2002-11-21 Infineon Technologies Ag Halbleitermodul
DE10206818A1 (de) 2002-02-18 2003-08-28 Infineon Technologies Ag Elektronisches Bauteil mit Klebstoffschicht und Verfahren zur Herstellung derselben
DE10228592A1 (de) * 2002-06-26 2003-10-02 Infineon Technologies Ag Leistungsbauteil mit einer Wärmesenke
DE10335155B4 (de) 2003-07-31 2006-11-30 Infineon Technologies Ag Verfahren zum Herstellen einer Anordnung eines elektrischen Bauelements auf einem Substrat
DE10336747A1 (de) * 2003-08-11 2005-03-17 Infineon Technologies Ag Halbleiterbauelementanordnung mit einer Nanopartikel aufweisenden Isolationsschicht
DE10345157B4 (de) * 2003-09-29 2009-01-08 Qimonda Ag Wärmeleitende Verpackung von elektronischen Schaltungseinheiten
JP2007533765A (ja) * 2003-10-10 2007-11-22 コモンウェルス サイエンティフィック アンド インダストリアル リサーチ オーガナイゼイション 耐摩耗性ポリマー
US8932632B2 (en) * 2003-10-21 2015-01-13 Ppg Industries Ohio, Inc. Adhesives and sealants nanotechnology
DE102004015403A1 (de) * 2004-03-26 2005-11-03 Infineon Technologies Ag Verwendung nanoskaliger Partikel zur Erzeugung kratzfester Schutzschichten auf Halbleiterchips
US8221885B2 (en) * 2004-06-02 2012-07-17 Cool Options, Inc. a corporation of the State of New Hampshire Thermally conductive polymer compositions having low thermal expansion characteristics
DE102004032605B4 (de) * 2004-07-05 2007-12-20 Infineon Technologies Ag Halbleiterbauteil mit einem Halbleiterchip und elektrischen Verbindungselementen zu einer Leiterstruktur
DE102004058305B3 (de) * 2004-12-02 2006-05-18 Infineon Technologies Ag Halbleiterbauteil mit einem eine Passivierungsschicht aufweisenden Halbleiterchip sowie Verfahren zur Herstellung desselben
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GB2436739B (en) * 2006-03-31 2008-03-12 Int Rectifier Corp Process for fabricating a semiconductor package
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2578514A1 (fr) 2011-10-03 2013-04-10 Berlinger & Co. Récipient doté dýune sécurisation de fermeture

Also Published As

Publication number Publication date
US6469086B1 (en) 2002-10-22
WO1999033106A1 (fr) 1999-07-01
DE19756887A1 (de) 1999-07-01
JP2001527131A (ja) 2001-12-25

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